CN100454144C - Method for double-face etching of wafer - Google Patents
Method for double-face etching of wafer Download PDFInfo
- Publication number
- CN100454144C CN100454144C CNB200410055871XA CN200410055871A CN100454144C CN 100454144 C CN100454144 C CN 100454144C CN B200410055871X A CNB200410055871X A CN B200410055871XA CN 200410055871 A CN200410055871 A CN 200410055871A CN 100454144 C CN100454144 C CN 100454144C
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- Prior art keywords
- wafer
- area
- turning axle
- photoresist pattern
- manufacturing process
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Links
- 238000005530 etching Methods 0.000 title claims abstract description 44
- 238000000034 method Methods 0.000 title claims abstract description 28
- 230000000149 penetrating effect Effects 0.000 claims abstract description 24
- 238000004519 manufacturing process Methods 0.000 claims description 34
- 229920002120 photoresistant polymer Polymers 0.000 claims description 22
- 239000000853 adhesive Substances 0.000 claims description 13
- 230000001070 adhesive effect Effects 0.000 claims description 13
- 238000000576 coating method Methods 0.000 claims description 13
- 239000011248 coating agent Substances 0.000 claims description 12
- 238000005260 corrosion Methods 0.000 claims description 9
- 230000007797 corrosion Effects 0.000 claims description 9
- 238000001259 photo etching Methods 0.000 claims description 9
- 238000005516 engineering process Methods 0.000 claims description 6
- 235000012431 wafers Nutrition 0.000 abstract description 67
- 239000012790 adhesive layer Substances 0.000 abstract 1
- 230000035515 penetration Effects 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 238000001020 plasma etching Methods 0.000 description 4
- 230000003628 erosive effect Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000001154 acute effect Effects 0.000 description 2
- 239000002390 adhesive tape Substances 0.000 description 2
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 230000004224 protection Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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Abstract
The present invention relates to a method for the double-face etching of wafers. The present invention comprises the following steps: firstly, a wafer is offered, and the wafer comprises at least one rotary shaft region and at least two penetrating regions, wherein the two penetrating regions are positioned on two sides of the rotary shaft regions; secondly, part of the wafer, which is positioned in the rotary shaft region, is removed by the bottom surface of the wafer; thirdly, the bottom surface of the wafer adheres to a loading device by an adhesive layer; the wafer which is positioned in the two penetration regions is removed from the upper surface of the wafer until the wafer is penetrated.
Description
Technical field
The present invention relates to a kind of method of two-sided etched wafer, particularly relate to and a kind ofly utilize two-sided etching manufacturing process to make the method for little turning axle.
Background technology
Micro electronmechanical (micro electro mechanical system, MEMS) technology is the emerging technology that a kind of height is integrated electronic circuit and machinery etc., and be applied to making various elements, for example little inductor, micro-actuator, micro motor and switching element etc. widely with electronics and mechanical dual nature.Compared to semiconductor element, microcomputer electric component is owing to often have special physical construction, therefore when making if directly utilize standard semiconductor fabrication techniques, formed structure often precision is not good, and can't reach the requirement of microcomputer electric component.Wherein little turning axle is a structure common in the microcomputer electric component, and because the shape of turning axle and surface state are very huge with the stress influence that can bear for the reliability of turning axle rotation, therefore the requirement for shape and surface state is strict especially when making little turning axle.
Please refer to Fig. 1 to Fig. 3, Fig. 1 is the synoptic diagram of a little turning axle 10, and Fig. 2 and Fig. 3 are the existing method synoptic diagram of making little turning axle.As shown in Figure 1, little turning axle 10 has an overhung construction, and can be subjected to the driving in voltage, light or magnetic field etc. and rotate according to the direction shown in the arrow among Fig. 1, therefore the shape of little turning axle 10 must be very accurate, and have level and smooth surface and uniform axis body, can guarantee reliability and reach the requirement that counter stress bears.The method of the little turning axle 10 of existing making is as described below.
As shown in Figure 2, at first provide a wafer 20, and form an etching stopping layer 22 and a photoresist pattern 24 in basal surface and upper surface respectively at wafer 20.As shown in Figure 3, then carry out an etching manufacturing process, utilize photoresist pattern 24, removing not by the wafer 20 of photoresist pattern 24 protections, and stop at etching stopping layer 22 until eating thrown wafer 20 as a shielding firmly.
Yet, existing method is in the process of eating thrown wafer 20, do not consider of the influence of the uniformity coefficient of etching uniformity coefficient and wafer 20 thickness, so the yield rate of etching manufacturing process can't be controlled effectively because each regional etch-rate of wafer 20 is different easily to etch-rate.For instance, when the etching manufacturing process proceeds to final stage and is about to eating thrown wafer 20, the etching total area will produce acute variation and cause the etching manufacturing process to produce the variation that can't expect.In addition, when being etched to etching stopping layer 22, very easily side etching phenomenon taking place and produce as shown in Figure 3 undercutting 26, and then influence the structure of little turning axle.As previously mentioned, in case the precision of the shape of little turning axle is not good, promptly can have a strong impact on the reliability of little turning axle.
In view of this, the applicant concentrates one's attention on to observe and study it, and proposes the present invention of improvement, with reliability and the yield rate that promotes little turning axle according to these shortcomings and foundation correlation experience for many years.
Summary of the invention
Therefore, fundamental purpose of the present invention is providing a kind of method of two-sided etched wafer, to improve the difficult problem that prior art can't overcome.
According to a preferred embodiment of the invention, provide a kind of method of making little turning axle.At first, provide a wafer, this wafer comprises at least one turning axle district and at least two penetrating regions, and this two penetrating region is positioned at two sides in this turning axle district.Then remove this wafer that part is positioned at this turning axle district by a basal surface of this wafer.Basal surface with this wafer utilizes an adhesive coating to be pasted on the load carrier subsequently, and is positioned at this wafer of this two penetrating region until penetrating this wafer by the upper surface removal of this wafer.
The present invention also provides a kind of method of two-sided etched wafer, it comprises: a wafer is provided, this wafer comprises at least one first area and at least one second area, and the area of this first area is less than the area of this second area, and this second area partially overlaps this first area; Carry out one first photoetching corrosion manufacturing process, remove this wafer to one predetermined depth that is positioned at this first area by a first surface of this wafer; This first surface of this wafer is attached on the load carrier; Carry out one second photoetching corrosion manufacturing process, by a second surface of this wafer remove be positioned at this second area but do not comprise be positioned at this first area this wafer until this wafer of eating thrown, wherein said predetermined depth is greater than the summation of the amount of variability of the amount of variability of the second photoetching corrosion manufacturing process and this wafer thickness.
The present invention also provides a kind of method of making little turning axle, and it comprises: a wafer is provided, and this wafer comprises at least one turning axle district and at least two penetrating regions, and this two penetrating region is positioned at two sides in this turning axle district; First surface by this wafer is removed this wafer to one predetermined depth that part is positioned at this turning axle district; And remove this wafer of being positioned at this two penetrating region by a second surface of this wafer until penetrating this wafer, wherein said predetermined depth is greater than the summation of the amount of variability of the amount of variability of the technology of the wafer of being removed two penetrating regions by the second surface of wafer and this wafer thickness.
Because method of the present invention utilizes two-sided etching mode to make little revolute axes configuration, it is wayward effectively to avoid in the etching manufacturing process etching total area to change the excessive etching result that causes, and incident lateral erosion problem when being etched to etching stopping layer, therefore can guarantee that little turning axle has satisfactory texture, and then promote the reliability of little turning axle and the stress that can bear.
In order further to understand feature of the present invention and technology contents, see also following about detailed description of the present invention and accompanying drawing.Yet accompanying drawing only for reference with aid illustration usefulness, be not to be used for to the present invention's limitr in addition.
Description of drawings
Fig. 1 is the synoptic diagram of a little turning axle.
Fig. 2 and Fig. 3 are the existing method synoptic diagram of making little turning axle.
Fig. 4 to Fig. 8 makes the method synoptic diagram of little turning axle for a preferred embodiment of the present invention.
The simple symbol explanation
10 little turning axle 20 wafers
22 etching stopping layers, 24 photoresist patterns
26 undercutting, 50 wafers
52 photoresist patterns, 54 turning axle districts
56 adhesive coatings, 58 load carriers
60 photoresist patterns, 62 penetrating regions
Embodiment
Please refer to Fig. 4 to Fig. 8, Fig. 4 to Fig. 8 makes the method synoptic diagram of little turning axle for a preferred embodiment of the present invention.As shown in Figure 4, at first provide a wafer 50, a silicon wafer for example, and form a photoresist pattern 52 in the basal surface of wafer 50, to define the position in a turning axle district 54.As shown in Figure 5, then carry out an etching manufacturing process, for example (reactive ionetching RIE), utilizes photoresist pattern 52 as a shielding firmly to a reactive ion etching, removes wafer 50 to one predetermined depths that are positioned at turning axle district 54.Wherein above-mentioned predetermined depth must be damaged in the subsequent etch manufacturing process with the structure of avoiding little turning axle greater than the summation of the amount of variability of the amount of variability of follow-up another etching manufacturing process of being undertaken by the upper surface of wafer 50 and wafer 50 thickness.
As shown in Figure 6, then remove photoresist pattern (figure does not show), and utilize an adhesive coating 56 that the basal surface of wafer 50 is engaged on the load carrier 58.Form another photoresist pattern 60 in the upper surface of wafer 50 more subsequently, to define the position of two penetrating regions 62.Wherein adhesive coating 56 optional with photoresists, metal, silicon dioxide, benzocyclobutene (Benzocyclobutene, BCB), pi (polyimide), silicon dioxide, metal, adhesive tape, UV adhesive tape or the material that can utilize wet etching, heating or irradiation mode to remove such as cured.58 of load carriers can be the material that silicon, glass, quartz or pottery etc. are compatible to semiconductor fabrication process.
As Fig. 7, then carry out another etching manufacturing process, for example a reactive ion etching manufacturing process utilizes photoresist pattern 60 as a shielding firmly, removes the wafer 50 that is positioned at penetrating region 62.Wherein when the etching manufacturing process proceeds to the degree of depth shown in Figure 7, the wafer that is positioned at turning axle district 54 can present suspended state, and this moment the etching total area maximum variable quantity only be chip area in the chip areas deduction turning axle district 54 in the penetrating region 62, so etching total area variation that can't produce acute variation and the generation of etching manufacturing process can't be expected.In addition, because this fashion is not etched to adhesive coating 56, the wafer 50 that therefore is positioned at turning axle district 54 also can not produce the phenomenon of lateral erosion.In addition, the size in the turning axle district that the photoresist pattern in present embodiment in the manufacturing process of etching for the first time (figure does not show) is defined is slightly larger than the physical size of little turning axle, can increase the location tolerance of the manufacturing process of etching for the second time by this, the shape of little turning axle of follow-up formation and size can have preferred accuracy by this.
As shown in Figure 8, proceed the etching manufacturing process and be positioned at till the wafer 50 of penetrating region 62, and the photoresist pattern 60 of wafer 50 upper surfaces and the adhesive coating 56 of lower surface are removed the making of promptly finishing little turning axle until eating thrown.It should be noted that adhesive coating 56 is except the function of adhesion wafer 50 and load carrier 58, the function that also has etching stopping layer, when etching proceeds to adhesive coating 56, the etching total area can produce bigger variation, and might produce side etching phenomenon, yet be suspended state owing to be positioned at the wafer 50 in turning axle district 54, and 54 etched predetermined depths are about to the amount of variability of this etching manufacturing process and the amount of variability of wafer 50 thickness is taken into account in the turning axle district when etching first time manufacturing process, so the wafers 50 in the turning axle district 54 can not be affected.In other words, the structure of little turning axle can not be subjected to the influence of the amount of variability of etching manufacturing process, and has the shape as original expection, therefore has good reliability.
Than prior art, method of the present invention utilizes two-sided etching mode to make little revolute axes configuration, it is wayward effectively to avoid in the etching manufacturing process etching total area to change the excessive etching result that causes, and incident lateral erosion problem when being etched to etching stopping layer, therefore can guarantee that little turning axle has satisfactory texture, and then promote the reliability of little turning axle and the stress that can bear.
The above only is the preferred embodiments of the present invention, and all equalizations of doing according to claim of the present invention change and modify, and all should belong to the covering scope of patent of the present invention.
Claims (11)
1. the method for a two-sided etched wafer, it comprises:
One wafer is provided, and this wafer comprises at least one first area and at least one second area, and the area of this first area is less than the area of this second area, and this second area partially overlaps this first area;
Carry out one first photoetching corrosion manufacturing process, remove this wafer to one predetermined depth that is positioned at this first area by a first surface of this wafer;
This first surface of this wafer is attached on the load carrier;
Carry out one second photoetching corrosion manufacturing process, by a second surface of this wafer remove be positioned at this second area but do not comprise be positioned at this first area this wafer until this wafer of eating thrown,
Wherein said predetermined depth is greater than the summation of the amount of variability of the amount of variability of the second photoetching corrosion manufacturing process and this wafer thickness.
2. the method for claim 1, wherein this first area and this second area are in order to define a little revolute axes configuration.
3. the method for claim 1, wherein this first photoetching corrosion manufacturing process comprises:
This first surface in this wafer forms one first photoresist pattern, and this first photoresist pattern exposes this first area;
By this first surface etching not by this wafer of this first photoresist pattern covers to described predetermined depth; And
Remove this first photoresist pattern.
4. the method for claim 1, wherein this first surface of this wafer utilizes an adhesive coating to be attached on this load carrier.
5. method as claimed in claim 4, wherein this second photoetching corrosion manufacturing process comprises:
This second surface in this wafer forms one second photoresist pattern, and this second photoresist pattern exposes this not overlapping with this first area second area;
Not by this wafer of this second photoresist pattern covers, and stop at this adhesive coating by this second surface eating thrown; And
Remove this second photoresist pattern.
6. method as claimed in claim 4 also is included in and carries out a step that removes this adhesive coating after this second photoetching corrosion manufacturing process.
7. method of making little turning axle, it comprises:
One wafer is provided, and this wafer comprises at least one turning axle district and at least two penetrating regions, and this two penetrating region is positioned at two sides in this turning axle district;
First surface by this wafer is removed this wafer to one predetermined depth that part is positioned at this turning axle district; And
Remove this wafer of being positioned at this two penetrating region by a second surface of this wafer until penetrating this wafer,
Wherein said predetermined depth is greater than the summation of the amount of variability of the amount of variability of the technology of the wafer of being removed two penetrating regions by the second surface of wafer and this wafer thickness.
8. method as claimed in claim 7, this wafer that wherein is positioned at this turning axle district utilizes etching mode to be removed.
9. method as claimed in claim 7, this wafer that wherein is positioned at this two penetrating region utilizes etching mode to be removed.
10. method as claimed in claim 7, wherein when removal was positioned at this wafer of this penetrating region, this first surface of this wafer utilized an adhesive coating to be attached on the load carrier.
11. method as claimed in claim 10 also is included in to remove and carries out a step that removes this adhesive coating behind this wafer be positioned at this penetrating region.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB200410055871XA CN100454144C (en) | 2004-08-05 | 2004-08-05 | Method for double-face etching of wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB200410055871XA CN100454144C (en) | 2004-08-05 | 2004-08-05 | Method for double-face etching of wafer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1731287A CN1731287A (en) | 2006-02-08 |
| CN100454144C true CN100454144C (en) | 2009-01-21 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB200410055871XA Expired - Fee Related CN100454144C (en) | 2004-08-05 | 2004-08-05 | Method for double-face etching of wafer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100454144C (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6458615B1 (en) * | 1999-09-30 | 2002-10-01 | Carnegie Mellon University | Method of fabricating micromachined structures and devices formed therefrom |
| US6541831B2 (en) * | 2000-01-18 | 2003-04-01 | Cornell Research Foundation, Inc. | Single crystal silicon micromirror and array |
| US20030071283A1 (en) * | 2001-10-17 | 2003-04-17 | Hymite A/S | Semiconductor structure with one or more through-holes |
| CN1510522A (en) * | 2002-12-20 | 2004-07-07 | Asml | Device manufacturing method |
-
2004
- 2004-08-05 CN CNB200410055871XA patent/CN100454144C/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6458615B1 (en) * | 1999-09-30 | 2002-10-01 | Carnegie Mellon University | Method of fabricating micromachined structures and devices formed therefrom |
| US6541831B2 (en) * | 2000-01-18 | 2003-04-01 | Cornell Research Foundation, Inc. | Single crystal silicon micromirror and array |
| US20030203530A1 (en) * | 2000-01-18 | 2003-10-30 | Lee Seung B. | Single crystal silicon micromirror and array |
| US20030071283A1 (en) * | 2001-10-17 | 2003-04-17 | Hymite A/S | Semiconductor structure with one or more through-holes |
| CN1510522A (en) * | 2002-12-20 | 2004-07-07 | Asml | Device manufacturing method |
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| Publication number | Publication date |
|---|---|
| CN1731287A (en) | 2006-02-08 |
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