CN1731287A - Method for double-face etching of wafer - Google Patents
Method for double-face etching of wafer Download PDFInfo
- Publication number
- CN1731287A CN1731287A CN 200410055871 CN200410055871A CN1731287A CN 1731287 A CN1731287 A CN 1731287A CN 200410055871 CN200410055871 CN 200410055871 CN 200410055871 A CN200410055871 A CN 200410055871A CN 1731287 A CN1731287 A CN 1731287A
- Authority
- CN
- China
- Prior art keywords
- wafer
- area
- turning axle
- photoresist pattern
- manufacturing process
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005530 etching Methods 0.000 title claims abstract description 44
- 238000000034 method Methods 0.000 title claims abstract description 27
- 230000000149 penetrating effect Effects 0.000 claims abstract description 18
- 238000000576 coating method Methods 0.000 claims abstract description 14
- 239000011248 coating agent Substances 0.000 claims abstract description 13
- 238000004519 manufacturing process Methods 0.000 claims description 30
- 229920002120 photoresistant polymer Polymers 0.000 claims description 22
- 239000000853 adhesive Substances 0.000 claims description 13
- 230000001070 adhesive effect Effects 0.000 claims description 13
- 238000005260 corrosion Methods 0.000 claims 6
- 230000007797 corrosion Effects 0.000 claims 6
- 238000001259 photo etching Methods 0.000 claims 6
- 239000012634 fragment Substances 0.000 abstract 7
- 230000001464 adherent effect Effects 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 38
- 238000010586 diagram Methods 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- 230000003628 erosive effect Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000001154 acute effect Effects 0.000 description 2
- 239000002390 adhesive tape Substances 0.000 description 2
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 230000004224 protection Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Landscapes
- Drying Of Semiconductors (AREA)
- Micromachines (AREA)
Abstract
The invention relates to a method of double-side etching fragment, which provides a fragment including at least one rotating shaft are and at least two penetrating areas located on the two sides of the rotating shaft area. Then it erases part fragment on the rotating shaft area by a bottom surface of the fragment. It then uses an adhesion coating to adherent the bottom surface of the fragment with a loading device and uses the upper surface to erase the fragment on the two penetrating areas to through the fragment.
Description
Technical field
The present invention relates to a kind of method of two-sided etched wafer, particularly relate to and a kind ofly utilize two-sided etching manufacturing process to make the method for little turning axle.
Background technology
Micro electronmechanical (micro electro mechanical system, MEMS) technology is the emerging technology that a kind of height is integrated electronic circuit and machinery etc., and be applied to making various elements, for example little inductor, micro-actuator, micro motor and switching element etc. widely with electronics and mechanical dual nature.Compared to semiconductor element, microcomputer electric component is owing to often have special physical construction, therefore when making if directly utilize standard semiconductor fabrication techniques, formed structure often precision is not good, and can't reach the requirement of microcomputer electric component.Wherein little turning axle is a structure common in the microcomputer electric component, and because the shape of turning axle and surface state are very huge with the stress influence that can bear for the reliability of turning axle rotation, therefore the requirement for shape and surface state is strict especially when making little turning axle.
Please refer to Fig. 1 to Fig. 3, Fig. 1 is the synoptic diagram of a little turning axle 10, and Fig. 2 and Fig. 3 are the existing method synoptic diagram of making little turning axle.As shown in Figure 1, little turning axle 10 has an overhung construction, and can be subjected to the driving in voltage, light or magnetic field etc. and rotate according to the direction shown in the arrow among Fig. 1, therefore the shape of little turning axle 10 must be very accurate, and have level and smooth surface and uniform axis body, can guarantee reliability and reach the requirement that counter stress bears.The method of the little turning axle 10 of existing making is as described below.
As shown in Figure 2, at first provide a wafer 20, and form an etching stopping layer 22 and a photoresist pattern 24 in basal surface and upper surface respectively at wafer 20.As shown in Figure 3, then carry out an etching manufacturing process, utilize photoresist pattern 24, removing not by the wafer 20 of photoresist pattern 24 protections, and stop at etching stopping layer 22 until eating thrown wafer 20 as a shielding firmly.
Yet, existing method is in the process of eating thrown wafer 20, do not consider of the influence of the uniformity coefficient of etching uniformity coefficient and wafer 20 thickness, so the yield rate of etching manufacturing process can't be controlled effectively because each regional etch-rate of wafer 20 is different easily to etch-rate.For instance, when the etching manufacturing process proceeds to final stage and is about to eating thrown wafer 20, the etching total area will produce acute variation and cause the etching manufacturing process to produce the variation that can't expect.In addition, when being etched to etching stopping layer 22, very easily side etching phenomenon taking place and produce as shown in Figure 3 undercutting 26, and then influence the structure of little turning axle.As previously mentioned, in case the precision of the shape of little turning axle is not good, promptly can have a strong impact on the reliability of little turning axle.
In view of this, the applicant concentrates one's attention on to observe and study it, and proposes the present invention of improvement, with reliability and the yield rate that promotes little turning axle according to these shortcomings and foundation correlation experience for many years.
Summary of the invention
Therefore, fundamental purpose of the present invention is providing a kind of method of two-sided etched wafer, to improve the difficult problem that prior art can't overcome.
According to a preferred embodiment of the invention, provide a kind of method of making little turning axle.At first, provide a wafer, this wafer comprises at least one turning axle district and at least two penetrating regions, and this two penetrating region is positioned at two sides in this turning axle district.Then remove this wafer that part is positioned at this turning axle district by a basal surface of this wafer.Basal surface with this wafer utilizes an adhesive coating to be pasted on the load carrier subsequently, and is positioned at this wafer of this two penetrating region until penetrating this wafer by the upper surface removal of this wafer.
Because method of the present invention utilizes two-sided etching mode to make little revolute axes configuration, it is wayward effectively to avoid in the etching manufacturing process etching total area to change the excessive etching result that causes, and incident lateral erosion problem when being etched to etching stopping layer, therefore can guarantee that little turning axle has satisfactory texture, and then promote the reliability of little turning axle and the stress that can bear.
In order further to understand feature of the present invention and technology contents, see also following about detailed description of the present invention and accompanying drawing.Yet accompanying drawing only for reference with aid illustration usefulness, be not to be used for to the present invention's limitr in addition.
Description of drawings
Fig. 1 is the synoptic diagram of a little turning axle.
Fig. 2 and Fig. 3 are the existing method synoptic diagram of making little turning axle.
Fig. 4 to Fig. 8 makes the method synoptic diagram of little turning axle for a preferred embodiment of the present invention.The simple symbol explanation
10 little turning axle 20 wafers
22 etching stopping layers, 24 photoresist patterns
26 undercutting, 50 wafers
52 photoresist patterns, 54 turning axle districts
56 adhesive coatings, 58 load carriers
60 photoresist patterns, 62 penetrating regions
Embodiment
Please refer to Fig. 4 to Fig. 8, Fig. 4 to Fig. 8 makes the method synoptic diagram of little turning axle for a preferred embodiment of the present invention.As shown in Figure 4, at first provide a wafer 50, a silicon wafer for example, and form a photoresist pattern 52 in the basal surface of wafer 50, to define the position in a turning axle district 54.As shown in Figure 5, then carry out an etching manufacturing process, for example (reactive ionetching RIE), utilizes photoresist pattern 52 as a shielding firmly to a reactive ion etching, removes wafer 50 to one predetermined depths that are positioned at turning axle district 54.Wherein above-mentioned predetermined depth must be damaged in the subsequent etch manufacturing process with the structure of avoiding little turning axle greater than the summation of the amount of variability of the amount of variability of follow-up another etching manufacturing process of being undertaken by the upper surface of wafer 50 and wafer 50 thickness.
As shown in Figure 6, then remove photoresist pattern (figure does not show), and utilize an adhesive coating 56 that the basal surface of wafer 50 is engaged on the load carrier 58.Form another photoresist pattern 60 in the upper surface of wafer 50 more subsequently, to define the position of two penetrating regions 62.Wherein adhesive coating 56 optional with photoresists, metal, silicon dioxide, benzocyclobutene (Benzocyclobutene, BCB), pi (polyimide), silicon dioxide, metal, adhesive tape, UV adhesive tape or the material that can utilize wet etching, heating or irradiation mode to remove such as cured.58 of load carriers can be the material that silicon, glass, quartz or pottery etc. are compatible to semiconductor fabrication process.
As Fig. 7, then carry out another etching manufacturing process, for example a reactive ion etching manufacturing process utilizes photoresist pattern 60 as a shielding firmly, removes the wafer 50 that is positioned at penetrating region 62.Wherein when the etching manufacturing process proceeds to the degree of depth shown in Figure 7, the wafer that is positioned at turning axle district 54 can present suspended state, and this moment the etching total area maximum variable quantity only be chip area in the chip areas deduction turning axle district 54 in the penetrating region 62, so etching total area variation that can't produce acute variation and the generation of etching manufacturing process can't be expected.In addition, because this fashion is not etched to adhesive coating 56, the wafer 50 that therefore is positioned at turning axle district 54 also can not produce the phenomenon of lateral erosion.In addition, the size in the turning axle district that the photoresist pattern in present embodiment in the manufacturing process of etching for the first time (figure does not show) is defined is slightly larger than the physical size of little turning axle, can increase the location tolerance of the manufacturing process of etching for the second time by this, the shape of little turning axle of follow-up formation and size can have preferred accuracy by this.
As shown in Figure 8, proceed the etching manufacturing process and be positioned at till the wafer 50 of penetrating region 62, and the photoresist pattern 60 of wafer 50 upper surfaces and the adhesive coating 56 of lower surface are removed the making of promptly finishing little turning axle until eating thrown.It should be noted that adhesive coating 56 is except the function of adhesion wafer 50 and load carrier 58, the function that also has etching stopping layer, when etching proceeds to adhesive coating 56, the etching total area can produce bigger variation, and might produce side etching phenomenon, yet be suspended state owing to be positioned at the wafer 50 in turning axle district 54, and 54 etched predetermined depths are about to the amount of variability of this etching manufacturing process and the amount of variability of wafer 50 thickness is taken into account in the turning axle district when etching first time manufacturing process, so the wafers 50 in the turning axle district 54 can not be affected.In other words, the structure of little turning axle can not be subjected to the influence of the amount of variability of etching manufacturing process, and has the shape as original expection, therefore has good reliability.
Than prior art, method of the present invention utilizes two-sided etching mode to make little revolute axes configuration, it is wayward effectively to avoid in the etching manufacturing process etching total area to change the excessive etching result that causes, and incident lateral erosion problem when being etched to etching stopping layer, therefore can guarantee that little turning axle has satisfactory texture, and then promote the reliability of little turning axle and the stress that can bear.
The above only is the preferred embodiments of the present invention, and all equalizations of doing according to claim of the present invention change and modify, and all should belong to the covering scope of patent of the present invention.
Claims (11)
1. the method for a two-sided etched wafer, it comprises:
One wafer is provided, and this wafer comprises at least one first area and at least one second area, and the area of this first area is less than the area of this second area, and this second area partially overlaps this first area;
Carry out one first photoetching corrosion manufacturing process, remove this wafer to one predetermined depth that is positioned at this first area by a first surface of this wafer;
This first surface of this wafer is attached on the load carrier;
Carry out one second photoetching corrosion manufacturing process, by a second surface of this wafer remove be positioned at this second area but do not comprise be positioned at this first area this wafer until this wafer of eating thrown.
2. the method for claim 1, wherein this first area and this second area are in order to define a little revolute axes configuration.
3. the method for claim 1, wherein this first photoetching corrosion manufacturing process comprises:
This first surface in this wafer forms one first photoresist pattern, and this first photoresist pattern exposes this first area;
By this first surface etching not by this wafer of this first photoresist pattern covers to this predetermined depth, and this predetermined depth is greater than the summation of the amount of variability of the amount of variability of follow-up this second photoetching corrosion manufacturing process of carrying out and this wafer thickness; And
Remove this first photoresist pattern.
4. the method for claim 1, wherein this first surface of this wafer utilizes an adhesive coating to be attached on this load carrier.
5. the method for claim 1, wherein this second photoetching corrosion manufacturing process comprises:
This second surface in this wafer forms one second photoresist pattern, and this second photoresist pattern exposes this not overlapping with this first area second area;
Not by this wafer of this second photoresist pattern covers, and stop at this adhesive coating by this second surface eating thrown; And
Remove this second photoresist pattern.
6. the method for claim 1 also is included in and carries out a step that removes this adhesive coating after this second photoetching corrosion manufacturing process.
7. method of making little turning axle, it comprises:
One wafer is provided, and this wafer comprises at least one turning axle district and at least two penetrating regions, and this two penetrating region is positioned at two sides in this turning axle district;
First surface by this wafer is removed this wafer that part is positioned at this turning axle district; And
Second surface removal by this wafer is positioned at this wafer of this two penetrating region until penetrating this wafer.
8. method as claimed in claim 7, this wafer that wherein is positioned at this turning axle district utilizes etching mode to be removed.
9. method as claimed in claim 7, this wafer that wherein is positioned at this two penetrating region utilizes etching mode to be removed.
10. method as claimed in claim 7, wherein when removal was positioned at this wafer of this penetrating region, this first surface of this wafer utilized an adhesive coating to be attached on the load carrier.
11. method as claimed in claim 10 also is included in to remove and carries out a step that removes this adhesive coating behind this wafer be positioned at this penetrating region.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB200410055871XA CN100454144C (en) | 2004-08-05 | 2004-08-05 | Method for double-face etching of wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB200410055871XA CN100454144C (en) | 2004-08-05 | 2004-08-05 | Method for double-face etching of wafer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1731287A true CN1731287A (en) | 2006-02-08 |
| CN100454144C CN100454144C (en) | 2009-01-21 |
Family
ID=35963666
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB200410055871XA Expired - Fee Related CN100454144C (en) | 2004-08-05 | 2004-08-05 | Method for double-face etching of wafer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100454144C (en) |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6458615B1 (en) * | 1999-09-30 | 2002-10-01 | Carnegie Mellon University | Method of fabricating micromachined structures and devices formed therefrom |
| US6541831B2 (en) * | 2000-01-18 | 2003-04-01 | Cornell Research Foundation, Inc. | Single crystal silicon micromirror and array |
| US6818464B2 (en) * | 2001-10-17 | 2004-11-16 | Hymite A/S | Double-sided etching technique for providing a semiconductor structure with through-holes, and a feed-through metalization process for sealing the through-holes |
| SG121844A1 (en) * | 2002-12-20 | 2006-05-26 | Asml Netherlands Bv | Device manufacturing method |
-
2004
- 2004-08-05 CN CNB200410055871XA patent/CN100454144C/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN100454144C (en) | 2009-01-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5319764B2 (en) | Incremental trimming | |
| KR100597928B1 (en) | Active matrix type display device and method of manufacturing the same | |
| JP3970943B2 (en) | Method for manufacturing an integrated part on a thin film | |
| CN105353506B (en) | Vertical comb teeth drives MOEMS micro mirror and preparation method thereof | |
| JP7355847B2 (en) | A method of manufacturing a display with a supporting substrate, a supporting substrate produced by this method and a coated glass specialized for flexible displays | |
| US20060138076A1 (en) | Method for making a planar suspended microstructure, using a sacrificial layer of polymer material and resulting component | |
| US6752931B2 (en) | Method for using DRIE with reduced lateral etching | |
| JP2011530159A (en) | Semiconductor wafer and method for producing the same | |
| JP2007033355A (en) | Method of manufacturing semiconductor sensor, and semiconductor sensor | |
| JP4306540B2 (en) | Thin processing method of semiconductor substrate | |
| US20240199413A1 (en) | Micro-device structures with etch holes | |
| JP2006509229A (en) | Display manufacturing method | |
| TWI718540B (en) | Touch structure and manufacturing method thereof and touch display device | |
| CN100454144C (en) | Method for double-face etching of wafer | |
| US6368885B1 (en) | Method for manufacturing a micromechanical component | |
| TW201906081A (en) | Fluidic assembly substrates and methods for making such | |
| CN102001618B (en) | Masking method for deep-etching multi-layer silicon structure by dry method | |
| RU2334304C2 (en) | Method of selective coating of microprocessed surface | |
| US5474956A (en) | Method of fabricating metallized substrates using an organic etch block layer | |
| CN110571130B (en) | Wafer alignment bonding method | |
| CN101121498B (en) | Method for manufacturing micro-torsion shaft | |
| EP1361192A2 (en) | Methods of metal coating contact holes in mems and similar applications | |
| US20110309467A1 (en) | Semiconductor device and manufacturing method thereof | |
| US20230058681A1 (en) | Printed devices in cavities | |
| KR0175444B1 (en) | Method of manufacturing semiconductor device having legs on groove |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20090121 Termination date: 20140805 |
|
| EXPY | Termination of patent right or utility model |