CN100451788C - Electro-optical device, wiring board, and electronic apparatus - Google Patents
Electro-optical device, wiring board, and electronic apparatus Download PDFInfo
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- CN100451788C CN100451788C CNB2006101154820A CN200610115482A CN100451788C CN 100451788 C CN100451788 C CN 100451788C CN B2006101154820 A CNB2006101154820 A CN B2006101154820A CN 200610115482 A CN200610115482 A CN 200610115482A CN 100451788 C CN100451788 C CN 100451788C
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Abstract
An electrooptical device of the invention is characterised in that a separation region (30) is provided in a separation region (R2) which extends in a Y direction among regions extending in a grating shape to partition off a plurality of lower light-shielding films (501). Lead-out wires (241a) and (242a) are formed extending in the Y direction on an insulating film (91) and arrayed in an X direction in plane view so that a separation region (R1) partitioning off the shield-films may not overlap the separation region (R2). Therefore, when a liquid crystal device (1) is manufactured or in operation, a crack generated in the separation area (30) is less propagated to the separation region (R1) through the insulating film (91).
Description
Technical field
The present invention relates to the technical field of electro-optical devices such as liquid-crystal apparatus, specially refer to possess be used for the specified image viewing area the frame photomask electro-optical device and possess the technical field of the electronic equipment of the sort of electro-optical device.
Background technology
Its component array baseplate of this electro-optical device and the configuration of subtend substrate subtend, this component array baseplate is formed with the demonstration electrode of pixel electrode, band electrode and so on, the various wirings of data line, sweep trace and so on, the thin film transistor (TFT) that pixel switch is used (below, be called TFT according to circumstances), thin film diode (below, be called TFD according to circumstances) and so on on-off element etc., this subtend substrate is formed with the counter electrode of banded or whole formation and photomask etc.Between this a pair of substrate, be surrounded by the electro-optical substance of liquid crystal etc. with seal member, and than the sealing area that has seal member by central authorities (just, zone on the substrate of liquid crystal etc.), the image display area that disposes pixel electrode is set.Here, particularly the plane looks and (that is to say, look from direction for the image display area subtend) be frame shape along the inboard profile of sealing area, the frame region of image display area for example utilize with the subtend substrate on the set same film of photomask stipulate.
On the component array baseplate of the neighboring area that is positioned at the image display area periphery, form the so-called peripheral circuit internally-arranged type electro-optical device of peripheral circuit such as scan line drive circuit, data line drive circuit, sample circuit and check circuit, also popularized.Thereby, in the neighboring area, there is the wiring of drawing to the neighboring area usually from image display area.
For this electro-optical device, the figure portion that is made of wiring that is present in the frame region on the component array baseplate and circuit component adopts patterned conducting films such as Al film to form.Therefore, be high strength and when comprising tilt component in a large number, incident light is reflected by its surface according to the reflectivity of figure portion, and incident light is by the gap of figure portion especially at incident light as projector's purposes etc.The light that is reflected by figure portion is such as by being reflected by the frame photomask of Cr formations such as (chromium) on the subtend substrate like this.
The inner face reflected light that is reflected by the frame photomask and the light of homology figure portion for example comprise: the reflected light that is gone out by the backside reflection of component array baseplate, the inner face reflected light that is reflected by the frame photomask, the light of homology figure portion, the polarization plates of being installed by the electro-optical device exiting side, the reflected light that optical device such as polarizer and dustproof glass is reflected, with a plurality of electro-optical devices be light valve when combining it as multiple-piece projector from other electro-optical device outgoing and pass back light that combining optical returns and the inner face reflected light that is reflected by figure portion and frame photomask etc., and these light finally mix in emergent light from the electro-optical device outgoing.
Its result is, has near the problem place of being appeared before one's eyes out such the edge of display image with the reflection of figure portion and the corresponding shading graphic of transmission (for example, when having arranged many wirings, the shading graphic of striped style etc.).As method one example that is used for addressing this problem the place, patent documentation 1 publicity goes out the electro-optical device that an a kind of frame region part on component array baseplate forms the downside photomask.
Patent documentation 1: the spy opens the 2003-177427 communique
But, with regard to this electro-optical device, produce the crack in the zone that is spaced from each other the downside photomask when it is made sometimes or when driving.This plane, crack looks propagates in the sandwich construction on component array baseplate along the edge of downside photomask and corner portion, sometimes the formed wiring cut-off of the upper layer side of downside photomask.Thereby, the decrease in yield when existence is made owing to crack propagation causes electro-optical device or the problem place of electro-optical device reliability decrease.More particularly, for example when power-supply wiring is cut off because of the propagation in crack, just be difficult to drive electro-optical device.The technology of 1 publicity of patent documentation only from prevent display image not the viewpoint of good situation provide a kind of electro-optical device that the downside photomask is formed at component array baseplate.In addition, according to patent documentation 1, the relevant sandwich construction that is used for not making the crack that produced to propagate on component array baseplate but is not mentioned.In addition, in patent documentation 1, the relevant wiring cut-off that causes owing to the propagation because of the crack etc. produces the not possibility of good situation, does not also see suggestive record.
Summary of the invention
Thereby, the present invention is place etc. and making in view of the above problems, its purpose is for providing a kind of electro-optical device, connecton layout and electronic equipment, for example be used for reducing producing the crack in the sandwich construction on the electro-optical device component array baseplate, even and when having produced the crack, also can suppress the propagation in crack.
Electro-optical device involved in the present invention is characterized by in order to address the above problem, and possesses: substrate; A plurality of pixels are formed at the image display area on the aforesaid substrate; A plurality of photomasks form island in the neighboring area that is positioned at above-mentioned image display area periphery; Separated region is the zone by the extension of the 1st direction among the zone between above-mentioned a plurality of photomask and the photomask; Dielectric film covers above-mentioned a plurality of photomask and above-mentioned separated region; And a plurality of the 1st conducting films, on above-mentioned dielectric film, extend ground by above-mentioned the 1st direction and form respectively, arrange by the direction of intersecting with above-mentioned the 1st direction; The get along well separated region that extends by the 1st direction of above-mentioned a plurality of photomasks of the separated region that extends by above-mentioned the 1st direction among the zone between above-mentioned a plurality of the 1st conducting film and the 1st conducting film overlaps.
Also have, preferably, above-mentioned photomask is the circuit downside formed downside photomask set in above-mentioned neighboring area.
According to this electro-optical device involved in the present invention, can reduce the situation that propagate by the dielectric film that covers separated region and downside photomask in the crack that produces in separated part.Thereby, can reduce the situation that the formed sandwich construction of dielectric film upper layer side sustains damage because of the propagation in crack.In addition, as described below, can also reduce the generation in crack in each layer on the substrate by means of the design (layout) of formed a plurality of downside photomasks and a plurality of the 1st conducting films on the substrate.
The downside photomask is in order to reduce that inner face reflected light that for example reason frame photomask reflected etc. causes and the striated shading graphic that results from the display image is set.The downside photomask directly or indirectly is formed on the substrate in the neighboring area of extending along above-mentioned image display area periphery.
The part of dielectric film be arranged among the zone that is spaced from each other a plurality of downside photomasks, along the separated region that extend on 1 limit of downside photomask, for example be when forming the dielectric film that covers a plurality of downside photomasks, the insulating material part that constitutes this dielectric film produces curing at separated region and obtains.
Here, during less than 1 μ m, insulating material as one man enters in separated region at the width of separated region, and the upper surface of a dielectric film part of extending at separated region becomes tabular surface.Thereby, can not form as the depression of a reason that produces the crack at separated region.In addition, at the width of separated region during more than or equal to 6 μ m, the dielectric film upper surface that extends at separated region becomes gently by the degree that does not make it to produce the crack, is difficult to produce the crack at separated region.During more than or equal to 3 μ m and smaller or equal to 5 μ m, experimentally or in theory all be easy to generation depression on separated region at the width of separated region mostly, cause the generation in crack.Thereby, as described below, can utilize the position relation of the 1st conducting film and downside photomask, effectively reduce the generation and the propagation in crack during more than or equal to 3 μ m and smaller or equal to 5 μ m at the width of separated region.Also have, please note that the above-mentioned width that is easy to produce the separated region in crack is an example, the depression that results from separated region changes according to insulating material that constitutes dielectric film and the difference of creating conditions.
A plurality of the 1st conducting films form respectively along above-mentioned 1 limit and extend on above-mentioned dielectric film, and so that separate the mode that mutual zone does not overlap with above-mentioned separated region, and the plane looks along the direction arrangement that intersects with above-mentioned 1 limit.Do not overlap because be spaced from each other on the area planar of a plurality of the 1st conducting films with separated region, thus can reduce electro-optical device and make the time or when driving the crack from separated part on 1 limit of downside photomask and the regional extent that is spaced from each other a plurality of the 1st conducting films propagate.More particularly, can suppress for example because of comparing generation and the propagation that more weak the partially overlapping of physical strength is easy to occur the crack with following downside photomask and the 1st conducting film, above-mentioned downside photomask is made of the metal film of aluminium or chromium etc., and above-mentioned the 1st conducting film is made of semiconductor film.
As mentioned above,, the generation and the propagation in crack can be reduced, and the formed layer of for example a plurality of the 1st conducting film upper layer side can be reduced because of the cut situation in crack according to electro-optical device involved in the present invention.Whereby, the not good situation that electro-optical device involved in the present invention produces when making by means of the minimizing electro-optical device, and can improve yield rate.In addition,, can reduce not good situation takes place when driving, can provide reliability good electro-optical device according to electro-optical device involved in the present invention.
In mode of electro-optical device involved in the present invention, can also possess the 2nd conducting film, it is formed at the upper layer side of above-mentioned a plurality of the 1st conducting films, and partially overlap at least in separated region above-mentioned downside photomask, that extend by the 1st direction, and extend by the direction that intersects with above-mentioned the 1st direction.
According to this mode, can reduce the situation of cutting off the 2nd conducting film because of the propagation in crack.The 2nd conducting film is because extend along the direction that intersects with above-mentioned 1 limit in the mode of above-mentioned separated region to partially overlap, so for example along 1 limit of downside photomask and crack when propagating, the 2nd conducting film is cut off.Thereby, propagate along 1 limit by not making the crack, just can reduce by the 2nd conducting film and be cut off.
Here, so-called " the 2nd conducting film " for example refers to the metal film of aluminium etc., more particularly, for example is the power-supply wiring of supplying with driving power, and this driving power is used for driving the various circuit that electro-optical device possesses.Owing to reduce the cut situation of this power-supply wiring, thereby for example can make it each circuit that the driven electro-optical device is possessed.
In other modes of electro-optical device of the present invention also can for, above-mentioned a plurality of downside photomask is arranged in rectangular in above-mentioned neighboring area, above-mentioned a plurality of the 1st conducting films on the direction that intersects with above-mentioned the 1st direction by arranging at interval with the interval of above-mentioned a plurality of downside photomasks is corresponding.
According to this mode, compare as the situation that a slice photomask forms on the neighboring area with the downside photomask, owing to be arranged in a plurality of downside photomasks rectangular in advance, thereby can alleviate the stress that upper strata and lower layer side to the downside photomask apply, can reduce the generation and the propagation in crack.More particularly, for example when being formed at neighboring area on as a slice photomask the downside photomask, particularly the stress that applies between the zone at edge, neighboring area is to the upper strata of downside photomask and downside photomask or lower floor increases, be easy to produce the crack and propagation.Therefore, rectangular by a plurality of downside photomasks are arranged in, stress is eased, and can reduces back light etc.
In addition, if do not bring effect to display image by the light that leaked to image display area by the zone that is spaced from each other a plurality of downside photomasks, the zone that will be spaced from each other a plurality of downside photomasks is in advance set narrowlyer, then can both keep the image quality of display image, reduce the generation in crack and the propagation in crack again.Moreover, a plurality of the 1st conducting films because on the direction that intersects with above-mentioned the 1st direction by arranging at interval, so also can reduce the stress that between a plurality of the 1st conducting films and a plurality of downside photomask, acts on the interval of above-mentioned a plurality of downside photomasks is corresponding.
In other modes of electro-optical device of the present invention, the flat shape of above-mentioned the 1st conducting film also can be to be the symmetric shape at center with above-mentioned separated region on the direction that intersects with above-mentioned the 1st direction.
According to this mode, for example when film forming methods such as using vapour deposition method or sputtering method makes the 1st conducting film film forming on dielectric film, can reduce from the stress of the 1st conducting film to the dielectric film effect, can reduce stress indirectly to the separated part effect.Thereby, the crack that produces at separated region can be reduced, and the situation that makes the crack be easy to propagate because of lower layer side stress can be suppressed the 1st conducting film.
In other modes of electro-optical device of the present invention, also possess a plurality of the 3rd conducting films, it is formed at different with above-mentioned a plurality of the 1st conducting films layers, and extends along the direction that intersects with above-mentioned the 1st direction, and arranges in above-mentioned the 1st direction; The length of mutually adjacent one the 1st conducting film and other its above-mentioned the 1st direction of the 1st conducting film is different mutually among above-mentioned a plurality of the 1st conducting film, the above-mentioned mat woven of fine bamboo strips 1 conducting film also can be by a conductive part that extends by the direction that intersects with the real estate of aforesaid substrate, be electrically connected with one the 3rd conducting film among above-mentioned a plurality of the 3rd conducting films, and above-mentioned other the 1st conducting film passes through to press other conductive part of the direction extension of intersecting with the aforesaid substrate face and other the 3rd conducting film among above-mentioned a plurality of the 3rd conducting film is electrically connected.
According to this mode, the formed sandwich construction that comprises each conducting film and dielectric film on the substrate need not be made complicated layer structure, just can be electrically connected with a plurality of the 3rd conducting films with one the 1st conducting film and other the 1st conducting film separately.
One the 1st conducting film and other the 1st conducting film are adjacent mutually along 1 limit, and different mutually along the length on 1 limit.More particularly, along the direction that intersects with 1 limit, one the 1st conducting film and arrange in the neighboring area than one the 1st conducting film other the 1st conducting film short or that grow along the length on 1 limit.
This a plurality of the 1st conducting films that comprise one the 1st conducting film and other the 1st conducting film are for example by as a conductive part of contact hole etc. and other conductive part separately, are electrically connected to be different from above-mentioned a plurality of the 1st conducting film and with one deck institute a plurality of the 3rd conducting films of formation respectively.
In this mode, also possess a plurality of transistors, be electrically connected respectively with a plurality of pixel portions that comprise pixel electrodes respectively, above-mentioned one the 1st conducting film also can be electrically connected with the transistorized grid among the mutual adjacent transistors of above-mentioned the 1st direction among above-mentioned a plurality of transistors, and above-mentioned other the 1st conducting film is electrically connected with other transistorized grid among the above-mentioned mutual adjacent transistors.
In this mode, one the 3rd conducting film that is electrically connected one the 1st conducting film for example is the wiring of supplying with switching signal, and this switching signal is used for a transistor is carried out switch.Equally, other the 3rd conducting film supplies with switching signal can for other transistors.
According to this mode, for example can be by comprising a plurality of transistorized transmission gates, will check that signal export to the check circuit set in the neighboring area, this inspection signal comprises and is used for judging whether good information of a plurality of pixel portions.
In other modes of electro-optical device of the present invention, also possesses the subtend substrate, it is configured to and the aforesaid substrate subtend, and bonding mutually by the frame region exterior lateral area of the above-mentioned image display area of regulation among above-mentioned neighboring area set sealing and aforesaid substrate; Above-mentioned subtend substrate with aforesaid substrate in the face of to subtend face side possess the upper light shielding that is formed at above-mentioned frame region, above-mentioned downside photomask also can be formed at the above-mentioned at least exterior lateral area among the above-mentioned neighboring area.
According to this mode, can reduce and mix in finally showing with the back light the emergent light of display light outgoing from image display area etc. as image, can suppress near the generation of the striped style shading graphic of appearing before one's eyes out the image display area edge.Thereby, just can reduce the poor display of only utilizing upper light shielding to be difficult to suppress.
Circuit board involved in the present invention is characterized by in order to address the above problem, and possesses: substrate; A plurality of conducting films form island on aforesaid substrate; Separated region is the zone by the extension of the 1st direction among the zone between above-mentioned a plurality of conducting film and the conducting film; Dielectric film covers above-mentioned a plurality of conducting film and above-mentioned separated region; And many wirings, on above-mentioned dielectric film, form respectively by above-mentioned the 1st direction and extend, arrange by the direction of intersecting with above-mentioned the 1st direction; The get along well separated region that extends by the 1st direction of above-mentioned a plurality of conducting films of the separated region that extends by above-mentioned the 1st direction among the zone between above-mentioned many wirings and the wiring overlaps.
According to circuit board involved in the present invention, identical with the electro-optical device of the invention described above, can reduce the generation and the propagation in crack, for example can reduce the formed layer of a plurality of conducting film upper layer side because of the cut situation in crack.
Electronic equipment involved in the present invention possesses the electro-optical device of the invention described above in order to address the above problem.
According to electronic equipment involved in the present invention, owing to possess the related electro-optical device of the invention described above, thereby can realize to carry out the various electronic equipments of projection display device, pocket telephone, electronic notebook, word processor, view finder formula or supervision direct viewing type video tape recorder, workstation, television telephone set, POS terminal and the touch panel etc. of high-quality display.In addition, as electronic equipment involved in the present invention, for example can also realize electrophoretic apparatus of electronic paper etc. etc.
This effect of the present invention and other advantages are illustrated by the embodiment that the following describes.
Description of drawings
Fig. 1 is the integrally-built planimetric map of expression liquid-crystal apparatus.
Fig. 2 is H-H ' sectional view of Fig. 1.
Fig. 3 is the circuit diagram of expression tft array substrate 10 main circuit structures.
Fig. 4 is the 1st layer a planimetric map of tft array substrate 10.
Fig. 5 is the 2nd layer a planimetric map of tft array substrate 10.
Fig. 6 is the 3rd layer a planimetric map of tft array substrate 10.
Fig. 7 is the VII-VII ' line sectional view of Fig. 4 to Fig. 6.
Fig. 8 is the VIII-VIII ' line sectional view of Fig. 4 to Fig. 6.
Fig. 9 is used for to the width in the zone that is spaced from each other the downside photomask and results from the accompanying drawing that the relation between the crack of separated part compares.
Figure 10 is the planimetric map of the 1st layer segment of tft array substrate 10 in the expression variation.
Figure 11 is the planimetric map of expression as the projector architecture of electronic equipment one example of using electro-optical device.
Figure 12 is the stereographic map of expression as the personal computer architecture of electronic equipment one example of using electro-optical device.
Figure 13 is the stereographic map of expression as the portable telephone structure of electronic equipment one example of using electro-optical device.
Symbol description
The 9a pixel electrode, 10TFT array base palte, 10a image display area, 20 subtend substrates, 21 counter electrodes, 30 separated regions, 70 pixel portions, 90 power-supply wirings, 101X-driving circuit, 102 external circuit-connecting terminal, the 104Y-driving circuit, 210 test startings (test enable) circuit, 241a, 242a, 241c, 242c lead-out wiring, T1, the wiring of T2 test starting
Embodiment
Below, on one side with reference to accompanying drawing, each embodiment of electro-optical device involved in the present invention, circuit board and electronic equipment is described on one side.In the present embodiment, enumerate the liquid-crystal apparatus 1 of driving circuit internally-arranged type tft active matrix type of drive, be an example of electro-optical device.
Fig. 1 is a planimetric map of seeing tft array substrate and each structure devices formed thereon from the subtend substrate-side in the lump, and Fig. 2 is H-H ' sectional view of Fig. 1.
In Fig. 1 and Fig. 2, liquid-crystal apparatus 1 possesses: tft array substrate 10; With subtend substrate 20, it is configured to and tft array substrate 10 subtends.
Subtend substrate 20 is bonding mutually by the neighboring area of extending at the periphery by image display area 10a set sealing 52 and tft array substrate 10.Liquid crystal layer 50 is enclosed 20 of tft array substrate 10 and subtend substrates.Subtend substrate 20 is as described below, and is bonding mutually by the sealing 52 and the tft array substrate 10 that are disposed in the frame region outside with the subtend face side of tft array substrate 10 subtends.
Tft array substrate 10 possesses the downside photomask 501 that is formed into its exterior lateral area from frame region.Downside photomask 501 parts are formed at frame photomask 53 outsides from the outer thoughtful perimeter sides of image display area 10a.Downside photomask 501 is in frame region and exterior lateral area thereof, be formed at the lower layer side of following two kinds of wirings and power-supply wiring, this wiring one is the wiring of drawing by circuit components such as TFT from following data line, the 2nd, be used for supplying with the wiring of switching signal, this switching signal is used for making the TFT that constitutes transmission gate to connect and ends, and this power-supply wiring is used for driving the various circuit that liquid-crystal apparatus 1 possesses.Downside photomask 501 is in the neighboring area of image display area 10a, reduces the transmitted light in gap between the reflected light that reflected by various wirings etc. and these wirings of transmission.Whereby, finally mix in showing that light quantity with reflected light in the emergent light and transmitted light is by just being able to remarkable minimizing by the amount that downside photomask 501 absorbed or reflected.Thereby, liquid-crystal apparatus 1 can reduce the back light that mixes in the emergent light of the display light outgoing that finally shows usefulness from image display area 10a as image etc., can suppress near the generation of the striped style shading graphic of appearing before one's eyes out the image display area 10a edge.That is to say that liquid-crystal apparatus 1 can reduce the poor display of only utilizing upper light shielding to be difficult to suppress.
In neighboring area among the zone of image display area 10a circumferential expansion, that be positioned at the sealing area outside that disposes sealing 52, data line drive circuit 101 and external circuit-connecting terminal 102 are provided with along a limit of tft array substrate 10, and scan line drive circuit 104 is provided with along 2 limits adjacent with this limit.Moreover, along tft array substrate 10 remaining limits many wirings 105 being set, these many wirings 105 are used for connecting between the set scan line drive circuit 104 in image display area 10a both sides.As shown in Figure 1, conducting parts 106 about 4 corner portion configurations of subtend substrate 20, conducting parts 106 play a role as the Lead-through terminal up and down between two substrates up and down.On the other hand, on tft array substrate 10, Lead-through terminal up and down is set in zone with these corner subtends.Whereby, can between tft array substrate 10 and subtend substrate 20, obtain and conduct.
The sample circuit 110 that the picture signal of supplying with from data line drive circuit 101 is sampled is configured in the frame region that is made of frame photomask 53.That is to say that the circuit components such as TFT that constitute sample circuit 110 are configured in the frame region.Moreover, 110 wiring portion and the various wiring portion such as wiring portion from the sweep trace that connected up in image display area 10a to scan line drive circuit 104 from the data line that connected up in image display area 10a to the wiring portion of sample circuit 110, from data line drive circuit 101 to sample circuit are formed on the zone in frame region or the frame region outside.
In Fig. 2, on tft array substrate 10, on the pixel electrode 9a that is formed with after pixel switch connects up with TFT and sweep trace, data line etc., form alignment films.On the other hand, on the subtend substrate 20 except counter electrode 21, also partly form alignment films in the superiors.In addition, liquid crystal layer 50 for example is made of the liquid crystal that has mixed a kind of or several nematic liquid crystals, and gets predetermined state of orientation between these a pair of alignment films.
Also have, on the tft array substrate 10 of Figure 1 and Figure 2, except these data line drive circuits 101, scan line drive circuit 104 and sample circuit 110 etc., can also form pre-charge circuit and check circuit etc., the precharging signal that this pre-charge circuit supplies with predetermined voltage level respectively for many data lines prior to picture signal, this check circuit are used for checking the quality, defective of this electro-optical device when the neutralization of liquid-crystal apparatus 1 manufacture process is dispatched from the factory etc.
Below, on one side with reference to Fig. 3, the main circuit structure of tft array substrate 10 is described on one side.Fig. 3 is the circuit diagram of expression tft array substrate 10 main circuit structures.Also have, tft array substrate 10 is one of circuit board application examples involved in the present invention.Fig. 3 is the circuit diagram after turning upside down with respect to planimetric map shown in Figure 1.
In Fig. 3, liquid-crystal apparatus 1 possesses multi-strip scanning line Gj (j=1,2,, n), many data line Si (i=1,2,, m), Y-driving circuit 104, X-driving circuit 101, sample circuit 110, a plurality of pixel portions 70, test circuit 40 and as the power-supply wiring 90 of the present invention's " the 2nd conducting film " example on tft array substrate 10.
Multi-strip scanning line Gj and many data line Si wirings are that 10a intersects mutually in image display area.
Y-driving circuit 104 is supplied with every sweep trace successively with switching signal when the inspection of pixel portions 70.Here, so-called switching signal refers to, the image of during with display image pixel portions 70 being supplied with shows with the different signal of sweep signal, is in order to be used for the TFT that pixel portions 70 is possessed is converted to the signal of on-state from the pixel portions 70 following inspection output signals of output.
The sampling switch 111 of 101 pairs of formation sample circuits 110 of X-driving circuit is supplied with sampled signal, converts these sampling switchs 111 to on-state.Here, so-called " sampled signal " refers to, signal etc. in order to supply with refresh signals by the 112 couples of data line Si of image signal line and to be used for judging the good situation not of whether in pixel portions, having taken place when checking, and from X-driving circuit 101 to 110 signal supplied of sample circuit.
PAD60 is in Fig. 1 and Fig. 2, and one that both can be used as external circuit-connecting terminal 102 constitutes, and also can be provided with by different solder joints as special use with it.
Power-supply wiring 90 parts are along test starting wiring T1 and T2, draw in the neighboring area of tft array substrate 10 around.Power-supply wiring 90 is supplied with each circuit with driving power VDD, and this driving power VDD is used for driving formed each not shown circuit on TE circuit 210, X-driving circuit 101, Y-driving circuit 104 and the tft array substrate 10.
Pull-down circuit 35 makes the current potential of test starting wiring T1 and T2 be able to stabilization, so that the test enable signals of test starting switch 241 and 242 being supplied with respectively by test starting wiring T1 and T2 does not produce change.
Also have, downside photomask 501 is formed at the neighboring area of the image display area 10a of tft array substrate 10.More particularly, the formation among the neighboring area of image display area 10a the zone of test circuit 40, also the lower layer side in various elements such as on-off element that constitutes test circuit 40 and electric capacity or wiring etc. forms.
Below, on one side with reference to Fig. 3, the inspection step for pixel portions 70 describes on one side.Also have, the inspection of pixel portions 70 is preferably in stickup tft array substrate 10 in the liquid-crystal apparatus 1 and the last stage of subtend substrate 20 implements.
In Fig. 3, when carrying out this inspection, for example the memory capacitance that at first pixel portions 70 is possessed is supplied with and is checked signal.
Then, each pixel portions 70 set pixel switch is become cut-off state with TFT.
Then, supply with the current potential make many data line Si become 0V just current potential be the refresh signal of 0V, refresh.At this moment, because the TFT that pixel switch is used is a cut-off state, thereby the inspection signal of supplying with to the memory capacitance of pixel portions 70 maintains the original state.
Then, because by each data line group Grk, according to the test enable signals of supplying with from test starting circuit 210, test starting switch 241 or 242 is connected and is ended, thereby by the data line Si that should check among 2 data lines, the inspection signal is exported to test wire 80.In the present embodiment, press each data line group Grk, by the output successively that puts in order of data line Si from the inspection signal of each pixel portions 70 output.Whereby, supply with for check circuit 300 and storer 310 by test wire TX and check signals, check each pixel portions 70 having or not of good situation not.
Inspection is as above undertaken by every sweep trace Gj and every data line Si.
According to the liquid-crystal apparatus of present embodiment, even in having the liquid-crystal apparatus of liquid crystal panel, also can carry out searching of defect pixel easily.And, since can be in making each technology the earlier stage, judge pixel portions 70 having or not of good situation not, just whether pixel portions good, thereby can improve the yield rate of liquid-crystal apparatus, can also reduce manufacturing cost.
Below, on one side with reference to Fig. 4 to Fig. 9, the centre point of present embodiment electro-optical device is described on one side.Fig. 4 to Fig. 6 is the planimetric map of the wire structures of the regional A that is provided with test circuit 40 among the neighboring area, and increases the weight of to illustrate each unit with thick solid line and dotted line.Also have, in Fig. 4 to Fig. 6, express the part that is arranged at tft array substrate 10 lower layer sides by this in proper order with black matrix.More particularly, Fig. 4 expresses the 1st layer part of tft array substrate 10 with solid line.Fig. 5 and Fig. 6 illustrate with heavy line respectively and are being in the 2nd layer and the 3rd layer of set part of Fig. 4 upper layer side.Fig. 7 is the VII-VII ' line sectional view of Fig. 4 to Fig. 6, and Fig. 8 is the VIII-VIII ' line sectional view of Fig. 4 to Fig. 6.
In Fig. 4 to Fig. 6, tft array substrate 10 possesses a plurality of downside photomasks 501, separated region 30, dielectric film 91 and 92, lead- out wiring 241a and 242a, power-supply wiring 90, as the present invention's " the 3rd conducting film " the test starting wiring T1 of an example and T2, test wire TX and as the present invention's " conductive part " contact hole C1, C2 and the C3 of an example separately separately.
In Fig. 4, downside photomask 501 is looking the island that forms rectangle respectively along the peripheral plane, neighboring area of extending of image display area 10a, and forms rectangular along the direction (directions X in the accompanying drawing) that direction (the Y direction in the accompanying drawing) reaches and this direction is crossing of lead- out wiring 241a and 242a extension.
Also have, though it is the simplest that the shape of downside photomask 501 becomes rectangle in design, but be not limited to rectangle completely, for example, also can be Any shape so long as the anistree shape that the angle of rectangle is cut away, the angle that makes rectangle become the shape of profiles such as curvilinear shape near rectangle.
According to this downside photomask 501, compare with the situation that forms a slice photomask in the neighboring area, can alleviate the stress that upper strata and lower layer side to downside photomask 501 apply, can reduce the generation and the propagation in following crack.In addition, if will be spaced from each other the zone of a plurality of downside photomasks in advance sets narrowlyer, then can further reduce the light that leaked to image display area 10a by the zone that is spaced from each other a plurality of downside photomasks 501 by latticed extension, can reduce the generation in crack and the propagation in crack again by not bringing effect both to keep the image quality of display image to display image.
In Fig. 7, separated region 30 is arranged at the separated region R2 that extend on 1 limit along downside photomask 501 among the zone that is spaced from each other a plurality of downside photomasks 501 by latticed extension (the Y direction in the accompanying drawing).Separated region 30 is when forming the dielectric film 91 that covers a plurality of downside photomasks 501, and the insulating material part of formation dielectric film 91 obtains in separated region R2 generation curing.
In Fig. 5, lead- out wiring 241a and 242a form respectively on dielectric film 91 by the Y direction and extend, and so that the separated region R1 that separates both sides is not arranged as the plane with separated region R2 with overlapping looks and arrange by directions X.Thereby, propagate to separated region R1 by dielectric film 91 in the crack that separated region 30 is produced in the time of can reducing the manufacturing of liquid-crystal apparatus 1 or during work.More particularly, can suppress because of with for example by downside photomasks that metal film constituted such as aluminium or chromium 501 and compare the more weak crack that causes of partially overlapping of physical strength by lead-out wiring 241a that semiconductor film constituted and 242a film and take place and propagate.Whereby, can reduce the formed sandwich construction of downside photomask 501 upper layer side sustains damage because of the propagation in crack.In addition, lead- out wiring 241a and 242a because along directions X by arranging, so also can reduce the stress of effect between lead- out wiring 241a and 242a and a plurality of downside photomask 501 with the corresponding spacing of the spacing of a plurality of downside photomasks 501.
The lead-out wiring 241a and the 242a that draw from test starting switch 241 and 242 grid separately pass through contact hole C1 and C2, are electrically connected to test starting wiring T1 and T2 separately.
Arrange along the directions X the accompanying drawing from the lead-out wiring 241b and the 242b of test starting switch 241 and TFT242 leakage extension separately.Lead- out wiring 241b and 242b are electrically connected to test wire TX by contact hole C3, and according to test starting switch 241 and 242 connection separately with by checking that signal exports to test wire TX.Whereby, the inspection signal of being exported from each pixel portions 70 is exported to the neighboring area that is arranged at image display area 10a or the check circuit of liquid-crystal apparatus 1 outside.
In Fig. 6, test wire TX, test starting wiring T1 and T2 and power-supply wiring 90 extend along directions X.
In Fig. 6 and Fig. 8, though for example extended by the upside of the power-supply wirings that metal film constituted 90 such as aluminium at separated region 30, separated region R1 and R2 plane look and do not overlap.Thereby, can reduce in crack that separated region 30 is produced to power-supply wiring 90 wiring 90 of propagating and cut off the electricity supply.Whereby, can to obtain by power-supply wiring 90 driving power as TF circuit 210, Y-driving circuit 104 and X-driving circuit 101, under trouble-free situation, supply with driving power.
Below, the configuration relation that the separated region R1 of present embodiment and R2 be described reduce crack propagation aspect the situation at particularly useful place.Fig. 9 is to the width in the zone that is spaced from each other the downside photomask and results from the accompanying drawing that the relation between the crack of separated region 30 compares, Fig. 9 (a) to (c) separately corresponding to the sectional view of Fig. 8.Also have, please note that the relation between the generation in crack of separated region R2a described below, R2b and R2c and separated part is an example, according to thickness, the insulating material that constitutes dielectric film and the difference of condition of cure of the dielectric film of shape, width and the thickness of downside photomask, covering downside photomask, the width dimensions of separated region that is easy to produce the crack is different.
In Fig. 9 (a), during less than 1 μ m, in separated region, as one man enter insulating material at the width of separated region R2a, the upper surface of separated region 30a becomes tabular surface.Thereby, be not formed at separated part as the depression of a reason that produces the crack.
In Fig. 9 (c), at the width of separated region R2c during more than or equal to 6 μ m, the upper surface of separated region 30c becomes gently by the degree that does not make it to produce the crack, is difficult to produce the crack at separated region 30c.
In Fig. 9 (b), during more than or equal to 3 μ m and smaller or equal to 5 μ m, experimentally or in theory all be easy to produce depression at the upper surface of separated region 30b at the width of separated region R2b.Thereby, in the present embodiment, during more than or equal to 3 μ m and smaller or equal to 5 μ m, can effectively reduce the generation and the propagation in crack at the width of separated region R2.
As mentioned above,, the generation and the propagation in crack be can reduce, and test starting wiring T1 and the formed power-supply wiring 90 of T2 upper layer side for example can be reduced because of the cut situation of the propagation in crack according to the liquid-crystal apparatus 1 of present embodiment.Whereby, the not good situation that produces in the time of can reducing the manufacturing of liquid-crystal apparatus 1 or during work can be sought the raising of yield rate and reliability.
(variation)
Below, on one side with reference to Figure 10, the variation of above-mentioned liquid-crystal apparatus 1 is described on one side.According to this routine lead-out wiring that liquid-crystal apparatus possessed, can further effectively reduce Fig. 4 to the generation in the crack at area B 1 place shown in Figure 6 and by area B 1 and B2 to crack that power-supply wiring 90 is propagated.Also have, below, describe for enclosing identical reference marks, and omit its detailed explanation for convenience with liquid-crystal apparatus 1 general part.Figure 10 is the planimetric map of expression tft array substrate 10 1st layer segment corresponding with Fig. 4.
In Figure 10, do not overlap because be separated from each other separated region R1a and the separated region R2 of lead-out wiring 241c and 242c, thus can be identical with above-mentioned liquid-crystal apparatus 1, reduce the crack propagation that is produced at separated region 30.
In addition, be with the center of respectively doing for oneself of the centre line C L 1 of the separated region R2 of downside photomask 501 and CL2 shape with the flat shape of the lead-out wiring 241c that grid were electrically connected of test starting switch 241 and 242 and 242c along the directions X symmetry.
According to lead-out wiring 241c and 242c, for example make lead-out wiring 241c and 242c on dielectric film 91 during film forming at film forming methods such as using vapour deposition method or sputtering method, can reduce by the stress of these wirings, reduce stress indirectly separated region 30 effects to dielectric film 91 effects.Thereby, the crack that produces at separated region 30 can be reduced, and the situation that makes the crack be easy to propagate because of lower layer side stress can be effectively suppressed at lead-out wiring 241c and 242c.More particularly, can reduce the situation that to area B 1 shown in Figure 6 and B2 the crack is propagated to power-supply wiring 90 by Fig. 4.
Lead-out wiring 241c and 242c form, and its length is different mutually along the Y direction in the accompanying drawing.Lead-out wiring 241c and 242c are electrically connected to Y direction in the accompanying drawing and stagger the test starting wiring T1 of configuration and T2 separately by contact hole C1a and C2a separately.Thereby, according to lead-out wiring 241c and 242c, both can on separated region R2, form lead-out wiring 241c and 242c separately, again can being electrically connected separately with lead-out wiring 241c and 242c and formed test starting wiring T1 on one deck and T2.Whereby, formed sandwich construction on the tft array substrate 10 need not be made complicated layer structure, just lead-out wiring 241c and 242c can be electrically connected with test starting wiring T1 and T2.
＜electronic equipment 〉
Below, Yi Bian with reference to Figure 11 to Figure 13, Yi Bian describe for the situation that above-mentioned liquid-crystal apparatus is used for various electronic equipments.
At first, explanation projector that this liquid-crystal apparatus is used as light valve.Figure 11 is the planimetric map of expression projector architecture example.As shown in figure 11, in projector 1100 inside, the lamp assembly 1102 that is made of white light sources such as Halogen lamp LEDs is set.From emitted projected light 4 catoptrons 1106 and 2 dichronic mirrors 1108 of this lamp assembly 1102 by being disposed in the light guide part 1104, be separated into 3 primary colors of RGB, incide liquid crystal panel 1110R, 1110B and the 1110G as light valve corresponding with each primary colors.
The structure of liquid crystal panel 1110R, 1110B and 1110G is identical with above-mentioned liquid-crystal apparatus, is carried out driving respectively according to R, G, the B primary signal supplied with from imaging signal processing circuit.And, incide colour splitting prism 1112 by the light after these liquid crystal panel modulation from 3 directions.In this colour splitting prism 1112, the light of R and B is bent into 90 degree, and the light of G is kept straight on the other hand.Thereby the result that image of all kinds is synthesized is, by projecting lens 1114, to projection of color images such as screens.
Here, notice that the demonstration obtained by each liquid crystal panel 1110R, 1110B and 1110G looks like to learn, upset about the demonstration picture that is obtained by liquid crystal panel 1110G need look like to carry out with respect to the demonstration that is obtained by liquid crystal panel 1110R, 1110B.
Also have, at liquid crystal panel 1110R, 1110B and 1110G, because by dichronic mirror 1108 incidents and R, G, light that each primary colors of B is corresponding, thereby do not need to be provided with color filter.
Below, the example that liquid-crystal apparatus is used for portable personal computer is described.Figure 12 is the stereographic map of this personal computer architecture of expression.In Figure 12, computing machine 1200 is made of main part 1204 that possesses keyboard 1202 and LCD assembly 1206.This LCD assembly 1206 adds backlight by described liquid-crystal apparatus 15 back sides in the above and constitutes.
Moreover, the example that liquid-crystal apparatus is used for portable telephone is described.Figure 13 is the stereographic map of this portable telephone structure of expression.In Figure 13, portable telephone 1300 possesses a plurality of operation push-buttons 1302, and the liquid-crystal apparatus 15 of reflection-type.In the liquid-crystal apparatus of this reflection-type, in its front front light-source is set as required.
Also have, except reference Figure 11 to the illustrated electronic equipment of Figure 13, can also enumerate liquid crystal TV set, view finder formula and monitor direct viewing type video tape recorder, automobile navigation apparatus, pager, electronic notebook, desk-top electronic calculator, word processor, workstation, television telephone set, POS terminal and possess the device etc. of touch panel.And, self-evident, can be used for these various electronic equipments.
The present invention is not limited to above-mentioned embodiment, in the scope of not violating the invention aim that to understand from technical scheme and instructions integral body or design, can suitably change, and the electronic equipment of following the electro-optical device of this change and possessing this electro-optical device also is included in the technical scope of the present invention.
Claims (9)
1. an electro-optical device is characterized by,
Possess:
Substrate;
A plurality of pixels, it is formed at the image display area on the aforesaid substrate;
A plurality of downside photomasks, it forms island in the neighboring area that is positioned at above-mentioned image display area periphery;
Separated region, it is the zone by the extension of the 1st direction among above-mentioned a plurality of downside photomasks zone each other;
Dielectric film, it covers above-mentioned a plurality of downside photomask and above-mentioned separated region; And
A plurality of the 1st conducting films, it forms respectively by above-mentioned the 1st direction and extends on above-mentioned dielectric film, presses the direction of intersecting with above-mentioned the 1st direction and arranges;
The separated region of above-mentioned the 1st conducting film of pressing above-mentioned the 1st direction extension among above-mentioned a plurality of the 1st conducting films zone each other, the separated region that extends by the 1st direction of the above-mentioned a plurality of downside photomasks of getting along well overlaps.
2. electro-optical device according to claim 1 is characterized by:
Above-mentioned downside photomask is the formed downside photomask of circuit downside that is provided with in above-mentioned neighboring area,
Also possess the 2nd conducting film, the 2nd conducting film is formed at the upper layer side of above-mentioned a plurality of the 1st conducting films, and partially overlaps at least in the separated region by the extension of the 1st direction of above-mentioned downside photomask, presses the direction that intersects with above-mentioned the 1st direction and extends.
3. electro-optical device according to claim 1 is characterized by:
Above-mentioned a plurality of downside photomask is arranged in rectangular in above-mentioned neighboring area,
Above-mentioned a plurality of the 1st conducting film is on the direction that intersects with above-mentioned the 1st direction, by arranging at interval with the interval of above-mentioned a plurality of downside photomasks is corresponding.
4. electro-optical device according to claim 1 is characterized by:
The flat shape of above-mentioned the 1st conducting film is to be the symmetric shape at center on the direction that intersects with above-mentioned the 1st direction, with the separated region that extends by the 1st direction of above-mentioned downside photomask.
5. electro-optical device according to claim 1 is characterized by:
Also possess a plurality of the 3rd conducting films, the 3rd conducting film is formed at different with above-mentioned a plurality of the 1st conducting films layers, and extends along the direction that intersects with above-mentioned the 1st direction, and arranges on above-mentioned the 1st direction;
Mutual adjacent one the 1st conducting film and other the 1st conducting film among above-mentioned a plurality of the 1st conducting film, they are different mutually in the length of above-mentioned the 1st direction,
Above-mentioned one the 1st conducting film is electrically connected by conductive part extending by the direction that intersects with the real estate of aforesaid substrate and one the 3rd conducting film among above-mentioned a plurality of the 3rd conducting film,
Above-mentioned other the 1st conducting film is electrically connected by other conductive part of extending by the direction that intersects with the aforesaid substrate face and other the 3rd conducting film among above-mentioned a plurality of the 3rd conducting film.
6. electro-optical device according to claim 5 is characterized by:
Above-mentioned a plurality of pixel also possesses pixel electrode and transistor respectively, and this transistor AND gate pixel electrodes is electrically connected,
Above-mentioned one the 1st conducting film is electrically connected with among above-mentioned a plurality of transistors, among the mutual adjacent transistors of above-mentioned the 1st direction, transistorized grid,
Above-mentioned other the 1st conducting film is electrically connected with other transistorized grid among the above-mentioned mutual adjacent transistors.
7. electro-optical device according to claim 1 is characterized by:
Also possess the subtend substrate, it is configured to and the aforesaid substrate subtend, and the sealing and the aforesaid substrate of the exterior lateral area by being arranged at frame region among the above-mentioned neighboring area, the above-mentioned image display area of regulation are bonding mutually,
Above-mentioned subtend substrate with aforesaid substrate in the face of to subtend face side, have the upper light shielding that is formed at above-mentioned frame region,
Above-mentioned downside photomask is formed at the above-mentioned at least exterior lateral area among the above-mentioned neighboring area.
8. a circuit board is characterized by,
Possess:
Substrate;
A plurality of conducting films, it forms island on aforesaid substrate;
Separated region, it is the zone by the extension of the 1st direction among above-mentioned a plurality of conducting film zone each other;
Dielectric film, it covers above-mentioned a plurality of conducting film and above-mentioned separated region; And
Many wirings, it forms respectively on above-mentioned dielectric film by above-mentioned the 1st direction and extends, and presses the direction of intersecting with above-mentioned the 1st direction and arranges;
The separated region of the above-mentioned wiring of pressing above-mentioned the 1st direction extension among above-mentioned many wirings zone each other, the separated region that extends by the 1st direction of the above-mentioned a plurality of conducting films of getting along well overlaps.
9. electronic equipment is characterized by:
Possesses each described electro-optical device in the claim 1 to 7.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005232866 | 2005-08-11 | ||
| JP232866/2005 | 2005-08-11 | ||
| JP157015/2006 | 2006-06-06 |
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| CN1912720A CN1912720A (en) | 2007-02-14 |
| CN100451788C true CN100451788C (en) | 2009-01-14 |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6650380B2 (en) * | 2001-12-20 | 2003-11-18 | Lg.Philips Lcd Co., Ltd. | Method of fabricating TFT-LCD device comprising double insulating layers |
| JP2004004526A (en) * | 2003-01-20 | 2004-01-08 | Seiko Epson Corp | Liquid crystal display |
| US20050117082A1 (en) * | 2000-05-31 | 2005-06-02 | Nec Lcd Technologies, Ltd. | Color liquid crystal display device and manufacturing method of the same |
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2006
- 2006-08-10 CN CNB2006101154820A patent/CN100451788C/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050117082A1 (en) * | 2000-05-31 | 2005-06-02 | Nec Lcd Technologies, Ltd. | Color liquid crystal display device and manufacturing method of the same |
| US6650380B2 (en) * | 2001-12-20 | 2003-11-18 | Lg.Philips Lcd Co., Ltd. | Method of fabricating TFT-LCD device comprising double insulating layers |
| JP2004004526A (en) * | 2003-01-20 | 2004-01-08 | Seiko Epson Corp | Liquid crystal display |
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| CN1912720A (en) | 2007-02-14 |
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