CN100449405C - Electronic beam exposure method - Google Patents
Electronic beam exposure method Download PDFInfo
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- CN100449405C CN100449405C CNB2006100263248A CN200610026324A CN100449405C CN 100449405 C CN100449405 C CN 100449405C CN B2006100263248 A CNB2006100263248 A CN B2006100263248A CN 200610026324 A CN200610026324 A CN 200610026324A CN 100449405 C CN100449405 C CN 100449405C
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Abstract
This invention discloses one electron beam exposure method, which comprises the following steps: firstly dividing the product design image pre-stored electron control device; the product design image comprises several aim image and aid image; the said multiple aim images and aid images are fixed with relative positions; exerting different exposure times for image single exposure; the said aid image division exposure times is less than aim image exposure times; the said each image exposure total sum is equal.
Description
Technical field
The present invention relates to a kind of electron beam exposure method, particularly a kind of electron beam exposure method that reduces the time shutter.
Background technology
Electron beam lithography has now become the main exposure means in nanoscale Micrometer-Nanometer Processing Technology and the microelectric technique as a kind of high-resolution exposure technique.
At present, electron beam exposure be mainly used in that the photoetching technique mask is made, aspects such as the research of Development of IC of new generation and exploitation and new unit, new construction and processing.
As application number is electron-beam exposure system described in " 200380102314.2 ", existing electron-beam exposure system comprises electron optical column, precise mobile platform and the electronic-controlled installation that is used to form with controlling electron beam, wherein, electron optical column mainly comprises electron source, electron beam control bore, electromagnetic lens and electron beam deflecting scanister.
Figure 1 shows that the electron-beam exposure system fundamental diagram, as shown in Figure 1, the free electron of electron source 11 inner cathode discharge generation arrives electromagnetic lens 12 zones after controlling bore through electron beam, and the variation of electromagnetic field focuses on electron beam 14 on the product 20 of waiting to expose.Electron beam deflecting scanister 13 and precise mobile platform 30 are used for adjusting electron beam 14 and focus on position on the product 20 of waiting to expose.Electronic-controlled installation 13 is by the exposure of modulated pulse signal 41 controlling electron beam.
Figure 2 shows that the schematic flow sheet of the existing Exposure mode of explanation; As shown in Figure 2, the concrete steps of electron beam exposure are in the prior art:
Step 21: according to product design figure 50 exposure products;
Step 22: corresponding product is carried out repeated exposure; Described exposure frequency is decided on actual requirement;
Step 23: obtain the product that has design configuration through overexposure.
But facts have proved, treat that the visuals in order to supplement production does not need multiexposure, multiple exposure can satisfy the supplement production effect in the exposure area, the time that repeated exposure consumes has directly been reduced production efficiency, has increased production cost.
Summary of the invention
Therefore, the object of the present invention is to provide a kind of electron beam exposure method,, reduce cost simultaneously in order to reduce the time shutter, to enhance productivity.
For achieving the above object, a kind of electron beam exposure method provided by the invention comprises: at first will be pre-stored in product design figure 50 subregions in the electronic-controlled installation 40; Then the figure in the different subregions is exposed separately.Described product design figure 50 comprises a plurality of targeted graphicals 51 and auxiliary pattern 52; There is not fixedly relative position between described a plurality of targeted graphical 51 and the auxiliary pattern 52; When being exposed separately, implements in the figure in the described different subregions different exposure frequencies; The exposure frequency of described auxiliary pattern 52 subregions is less than targeted graphical 51 regional exposure number of times; The summation of described each figure regional exposure amount equates.
Compared with prior art, the present invention has the following advantages: adopt figure regional exposure mode, the figure of different subregions is applied different exposure frequencies, reduced the time shutter effectively, improved production efficiency simultaneously, and reduced cost.
Description of drawings
Fig. 1 is the electron-beam exposure system fundamental diagram;
Fig. 2 is the schematic flow sheet of the existing Exposure mode of explanation;
Fig. 3 is the schematic flow sheet of explanation embodiment of the present invention one;
Fig. 4 is a product design figure subregion synoptic diagram;
Fig. 5 is the schematic flow sheet of explanation embodiment of the present invention two.
Wherein:
10: electron optical column; 11: electron source;
12: electromagnetic lens; 13: electron beam deflecting scanister;
14: electron beam; 20: product to be exposed;
21: photoresist; 30: precise mobile platform;
40: electronic-controlled installation; 41: modulated pulse signal;
50: the product design figure; 51: targeted graphical;
52: auxiliary pattern.
Embodiment
For above-mentioned purpose of the present invention, feature and advantage can be become apparent more, the specific embodiment of the present invention is described in detail below in conjunction with accompanying drawing.
Figure 3 shows that the schematic flow sheet of explanation embodiment of the present invention one; As Fig. 3 and shown in Figure 1, the concrete steps of embodiment of the present invention one are:
Step 31: utilize 40 pairs of product design figures of electronic-controlled installation 50 to carry out subregion, so that the figure in the different subregions is implemented different exposure frequencies, and then treat exposure product 20 and carry out the controlled regional exposure of exposure frequency.
Figure 4 shows that product design figure subregion synoptic diagram; As shown in Figure 4, described product design figure 50 comprises a plurality of targeted graphicals 51 and auxiliary pattern 52.There is not fixedly relative position between described a plurality of targeted graphical 51 and the auxiliary pattern 52; Described a plurality of targeted graphical 51 common product Application Design figures of forming; Described a plurality of auxiliary pattern is produced auxiliary pattern 52 common compositions, in order to satisfy the needs of products in circulation; Described auxiliary pattern 52 comprises production numbering, alignment mark, figure frame and product mark etc.
Step 32: the product design figure 50 after the application partition is treated exposure product 20 and is carried out regional exposure in turn.
At first, the product 20 of will waiting to expose places on the described precise mobile platform 30; Be coated with photoresist layer 21 on the described product 20 of waiting to expose; Described photo anti-corrosion agent material is methacrylate resin, cyclic olefin resins, phenolics or phenolic resin etc.
Use described electron-beam exposure system, at first utilize product design figure 50 behind the subregion of electronic-controlled installation 40 stored to determine the exposure register lock of each subregion automatically; Then, described electronic-controlled installation 40 adopts vector scanning modes, utilizes the product design figure 50 behind the subregion of its stored, treats exposure product 20 by controlling electron beam 14 and carries out regional exposure; Described vector scan regional exposure is for carrying out the redirect exposure in treating the exposure area, white space is directly skipped.
Concrete exposure process at first needs to produce free electron by hot cathode discharge in the electron source 11, described free electron forms electron beam 14 via the control bore, described electron beam 14 quickens under anode high voltage and after obtaining high-energy, enter electromagnetic lens 12 districts, electronic-controlled installation 40 focuses on the product 20 of waiting to expose by the variation of modulated pulse signal 41 control electromagnetic fields and with electron beam 14.Described electronic-controlled installation 40 is treated in the exposure area with certain that adjust that electron beam 14 focuses on the product 20 of waiting to expose by modulated pulse signal 41 controlling electron beam deflection scanning devices 13 and precise mobile platform 30, in described zone, the product design figure 50 after the exposure respective partition; Then, described electronic-controlled installation 40 is treated in the exposure area product design figure 50 after the exposure respective partition by modulated pulse signal 41 controlling electron beam deflection scanning devices 13 and precise mobile platform 30 with other that adjust that electron beam 14 focuses on the product 20 of waiting to expose.
Step 33: each regional exposure time logarithmic data according to defaulting in the electronic-controlled installation 40, carry out repeated exposure in turn to each subregion.
Described regional exposure number of times is decided on actual requirement, and usually, targeted graphical 51 is selected secondary, four times or the exposure of eight subzones for use; Auxiliary pattern 52 regional exposure number of times are less than targeted graphical 51 regional exposure number of times; And the summation of exposure equates in each figure subregion.
Step 34: on the product 20 of waiting to expose, obtain product design figure 50 through overexposure.
Figure 5 shows that the schematic flow sheet of explanation embodiment of the present invention two; As Fig. 5 and shown in Figure 1, use described electron-beam exposure system, the concrete steps of embodiment of the present invention two are:
Step 51: utilize 40 pairs of product design figures of electronic-controlled installation 50 to carry out subregion;
Step 52: the product design figure 50 after the application partition is treated exposure product 20 and is carried out independent figure subregion repeated exposure.Described regional exposure number of times is decided on actual requirement, and usually, targeted graphical 51 is selected secondary, four times or the exposure of eight subzones for use; Auxiliary pattern 52 regional exposure number of times are less than targeted graphical regional exposure number of times; And the summation of exposure equates in each figure subregion.
Step 53: variant figure subregion is exposed in turn.
Step 54: on the product 20 of waiting to expose, obtain product design figure 50 through overexposure.
Adopt disclosed figure regional exposure mode of the present invention, can apply different exposure frequencies to the figure of different subregions, reduced the time shutter effectively, improved production efficiency simultaneously, and reduced cost.
Though the present invention with preferred embodiment openly as above; but it is not to be used for limiting the present invention; any those skilled in the art without departing from the spirit and scope of the present invention; can make possible change and modification, so protection scope of the present invention should be as the criterion with the scope that claim of the present invention was defined.
Claims (5)
1. an electron beam exposure method is characterized in that, comprising:
A. product design figure (50) subregion in the electronic-controlled installation (40) be will be pre-stored in, auxiliary pattern (52) subregion and targeted graphical (51) subregion will be divided into;
B. the figure in the different subregions is exposed separately, the exposure frequency of described auxiliary pattern (52) subregion is less than targeted graphical (51) regional exposure number of times.
2. electron beam exposure method according to claim 1 is characterized in that: described product design figure (50) comprises a plurality of targeted graphicals (51) and auxiliary pattern (52); There is not fixedly relative position between described a plurality of targeted graphical (51) and the auxiliary pattern (52).
3. electron beam exposure method according to claim 2 is characterized in that: described a plurality of targeted graphicals (51) are formed product Application Design figure jointly.
4. electron beam exposure method according to claim 2 is characterized in that: described auxiliary pattern (52) comprises production numbering, alignment mark, figure frame and product mark.
5. electron beam exposure method according to claim 1 is characterized in that: the summation of the exposure of described auxiliary pattern (52) subregion and targeted graphical (51) subregion equates.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006100263248A CN100449405C (en) | 2006-04-30 | 2006-04-30 | Electronic beam exposure method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006100263248A CN100449405C (en) | 2006-04-30 | 2006-04-30 | Electronic beam exposure method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101063820A CN101063820A (en) | 2007-10-31 |
| CN100449405C true CN100449405C (en) | 2009-01-07 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2006100263248A Active CN100449405C (en) | 2006-04-30 | 2006-04-30 | Electronic beam exposure method |
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Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101477318B (en) * | 2008-01-04 | 2012-05-23 | 奇美电子股份有限公司 | Photomask contraposition exposure method and photomask component |
| CN113050386B (en) * | 2021-03-19 | 2024-07-16 | 京东方科技集团股份有限公司 | Digital exposure method, electronic component substrate and preparation method thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1297251A (en) * | 1999-11-17 | 2001-05-30 | 日本电气株式会社 | Electronic beam exposure method and used mask, and electronic beam exposure system |
| CN1091887C (en) * | 1997-03-31 | 2002-10-02 | 日本电气株式会社 | Pattern exposure method using electron beam |
| JP2004079699A (en) * | 2002-08-14 | 2004-03-11 | Sony Corp | Mask pattern dividing method, mask pattern dividing program, and method of manufacturing exposure mask and semiconductor device |
| JP2004087715A (en) * | 2002-08-26 | 2004-03-18 | Semiconductor Leading Edge Technologies Inc | Method for exposing to electron beam, semiconductor device, method for processing exposure pattern data, and program |
| CN1708729A (en) * | 2002-10-28 | 2005-12-14 | 松下电器产业株式会社 | Electron beam exposure method and electron beam exposure system |
-
2006
- 2006-04-30 CN CNB2006100263248A patent/CN100449405C/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1091887C (en) * | 1997-03-31 | 2002-10-02 | 日本电气株式会社 | Pattern exposure method using electron beam |
| CN1297251A (en) * | 1999-11-17 | 2001-05-30 | 日本电气株式会社 | Electronic beam exposure method and used mask, and electronic beam exposure system |
| JP2004079699A (en) * | 2002-08-14 | 2004-03-11 | Sony Corp | Mask pattern dividing method, mask pattern dividing program, and method of manufacturing exposure mask and semiconductor device |
| JP2004087715A (en) * | 2002-08-26 | 2004-03-18 | Semiconductor Leading Edge Technologies Inc | Method for exposing to electron beam, semiconductor device, method for processing exposure pattern data, and program |
| CN1708729A (en) * | 2002-10-28 | 2005-12-14 | 松下电器产业株式会社 | Electron beam exposure method and electron beam exposure system |
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| CN101063820A (en) | 2007-10-31 |
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Owner name: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING |
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Effective date of registration: 20111116 Address after: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Co-patentee after: Semiconductor Manufacturing International (Beijing) Corporation Patentee after: Semiconductor Manufacturing International (Shanghai) Corporation Address before: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Patentee before: Semiconductor Manufacturing International (Shanghai) Corporation |