CN100447944C - Dry device and dry method for semiconductor equipment - Google Patents
Dry device and dry method for semiconductor equipment Download PDFInfo
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- CN100447944C CN100447944C CNB2005100992883A CN200510099288A CN100447944C CN 100447944 C CN100447944 C CN 100447944C CN B2005100992883 A CNB2005100992883 A CN B2005100992883A CN 200510099288 A CN200510099288 A CN 200510099288A CN 100447944 C CN100447944 C CN 100447944C
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Abstract
The invention is concerned with the drying equipment and the method for semiconductor equipment, the drying equipment includes: the extracting equipment, the pipeline, the liquid switch, the current switch, and the controlling equipment, the extracting equipment and the pipeline connect with the semiconductor equipment, sets the liquid switch on the pipeline, the controlling equipment electronic control the liquid switch by the current switch. A liquid enters the semiconductor equipment by the extracting equipment when the liquid switch is starting. The invention can achieve the drying operation and reach the expecting press of the reaction chamber in a short time by the switch time of the start and close of the liquid switch.
Description
[technical field]
The present invention relates to a kind of drying means of semiconductor equipment, especially is applied in the equipment of chemical vapour deposition (CVD).
[background technology]
Chemical vapor deposition (CVD) is a mode of utilizing chemical reaction, at reative cell (chamber) reactant (being generally fluid) is generated solid-state product, and is deposited on a kind of film deposition techniques of wafer surface.Development through many decades, chemical vapour deposition (CVD) has become most important and topmost thin film deposition mode in the semiconductor fabrication process, be confined to the deposition of metallic film mostly unlike the application of physical vapour deposition (PVD), no matter be conductor, semiconductor or dielectric material, can deposit by chemical vapour deposition (CVD).
When in reative cell, carrying out chemical vapour deposition (CVD), deposit, as conductor, semiconductor or dielectric material, except be deposited on wafer surface, also can be deposited in the inwall or semiconductor device of reative cell, and through repeating deposition, to make on the inwall of reative cell or accumulated deposits in the semiconductor device, form pollutant, thereby drop to wafer surface, if in after through a series of fabrication schedule, as cleaning or etched wafer, to make pollutant peel off (peeling), cause wafer defect (defect).
Therefore, for reative cell, after chemical vapour deposition (CVD), generally can carry out a cleaning, as using etchant, with the deposit removing of accumulating on the reaction chamber wall, or the accessory substance (byproduct) that chemical vapour deposition (CVD) is produced removes.In addition, for fear of using too much etchant chamber cleaning, cause etchant to residue in reaction chamber wall, and then the corrosion reaction chamber interior walls, cause the metal peeling of reaction chamber wall, drop to wafer surface, therefore, in known techniques, use the endpoint detecting method, measure the electricity slurry ion that forms etchant in the reative cell, as the content of the electricity of fluorine containing etchant agent slurry ion, whether finish with the decision cleaning activity.
Starch in heavier-duty chemical vapour deposition (CVD) (PECVD), the high density plasma enhanced chemical vapor deposition (HDP CVD) at four kinds of major sedimentary method-aumospheric pressure cvds (APCVD), low-pressure chemical vapor deposition (LPCVD), electricity that chemical vapour deposition (CVD) comprises, wherein, electricity slurry heavier-duty chemical vapour deposition (CVD) and high density plasma enhanced chemical vapor deposition become main thin film deposition mode gradually in recent years.Electricity slurry heavier-duty chemical vapour deposition (CVD) system utilizes radio frequency (Radio Frequency) power supply and produce the electricity slurry in reative cell, high density plasma enhanced chemical vapor deposition then utilizes and is positioned at outer microwave (microwave) the generation electricity slurry of reative cell, therefore, in the cleaning of electricity slurry heavier-duty chemical vapour deposition (CVD), can detect the variation of electricity slurry immediately, and in the cleaning of high density plasma enhanced chemical vapor deposition, then be difficult to detect the variation of electricity slurry, therefore can't use the endpoint detecting method of known techniques, whether the decision cleaning is finished, has the residual problem of etchant.
Residual except have pollutants such as reactant or accessory substance at reative cell, cause wafer defect the source outside, semiconductor equipment or part also have similar problem.Therefore, after carrying out chemical vapour deposition (CVD), except chamber cleaning, also can clean other relevant semiconductor equipment or parts, right its also has the problem that chamber cleaning can exist that is similar to, especially the semiconductor equipment of shape bending or part are difficult especially as the cleaning of reactor, vacuum hose etc.
The U.S. Patent number 6 of Kevin Lee, 539,953, announce in 2003.4.1, patent name is " at the method and the device of chemical vapour deposition (CVD) purge heater ", it discloses a kind of use one connector (plug) and connector seat (plug base), with method and the device at the chemical vapour deposition (CVD) purge heater.By the device that it disclosed, inject oxidant, as hydrogen peroxide (H
2O
2), heater is immersed in the oxidant, pollutant and oxidant residual in the heater carry out oxidation reaction, clean with deionized water (deionized water) afterwards, to remove pollutants such as reactant residual after the chemical vapour deposition (CVD) or accessory substance, and when importing oxidant or deionized water, feed nitrogen simultaneously, with the carrying out of accelerated reaction.At last, again with non-dust cloth (lint-free cloth) wiping, feed inert fluid, to carry out drying.Wherein, for guaranteeing to finish drying heater, therefore, need 20 minutes inert fluid of feeding, preferable situation is for feeding 30 minutes.
Connect the vacuum hose of semiconductor equipment for some, make the design of vacuum hose mostly be crooked for saving the space, if the method step that uses Kevin Lee to be disclosed is loaded down with trivial details, need wiping to feed gas again, to reach the purpose that removes pollutant and steam, need the manpower and the time of overspending.If, directly blow vacuum hose with vacuum pump or with nitrogen with present general technology, still have moisture entrapment in pipeline, be difficult to drying, reach the overlong time of the required pressure of reative cell (or vacuum degree).In addition, when general semiconductor equipment keeps in repair, also have the problem of drying of semiconductor part, because when cleaning semiconductor device, can use a large amount of chemical solutions and water, therefore, after cleaning, the drying of semiconductor part is quite important, if use known techniques, the overlong time of semiconductor equipment maintenance will be made.
Therefore, need badly at present and want a kind of drying device and method, can be used in the equipment of chemical vapour deposition (CVD), to reach pressure (or vacuum degree) dry and expection at short notice.
[summary of the invention]
The drying means that the purpose of this invention is to provide a kind of semiconductor equipment, in chemical vapor depsotition equipment, semiconductor equipment or part can be finished at short notice,, and the pressure (or vacuum degree) of expecting in the reative cell can be reached at short notice as the drying operation of vacuum hose.
Another object of the present invention provides a kind of drying means of semiconductor equipment, can at short notice the accessory substance that produces after the chemical vapour deposition (CVD) be removed, avoid accessory substance to remain in reaction chamber wall, pollutant when causing another time chemical vapour deposition reaction makes the surface of the semiconductor element that carries out chemical vapour deposition (CVD) produce defective.
A further object of the present invention provides a kind of drying means of semiconductor equipment, by the control fluid, as inert gas or nitrogen, fluid turnover semiconductor equipment for several times, make and be adsorbed in semiconductor equipment, as vacuum hose, steam shift out semiconductor element with fluid so that semiconductor element becomes dry.
The invention provides a kind of drying device of semiconductor equipment, it is characterized in that: comprise: an extracting device is connected with this semiconductor equipment; One pipeline is connected with this semiconductor equipment, and a fluid switch is arranged on this pipeline, wherein when this fluid switch is opened, by this extracting device, makes a fluid flow out this semiconductor equipment via this pipeline; And a control device, have a current switch, electrically control the unlatching of this fluid switch and close; Between opening and closing, switch for several times by this fluid switch, with dry this semiconductor device and reach the pressure (or vacuum degree) of expection.
The invention provides a kind of drying means of semiconductor equipment, use a draw-out device, a pipeline and a control device, wherein pipeline is provided with a fluid switch, and control device has a current switch, the control fluid switch, drying means comprises provides a fluid, starts draw-out device, switching is being opened and closed to fluid switch for several times afterwards, makes fluid flow out semiconductor equipment by the road for several times.
In a preferred embodiment, between at least flow periods of fluid about 5 to 10 minutes, at least intercourse that body flows was approximately less than 1 minute.This drying device system is used in the chemical vapor depsotition equipment.
Aforementioned only for summarizing, feature of the present invention and advantage are described in the following infinite detailed description.
[description of drawings]
Fig. 1 is the schematic diagram according to the drying device of one embodiment of the invention.
Fig. 2 is the flow chart according to the drying means of one embodiment of the invention.
Fig. 3 is for using drying device of the present invention and general drying device, time and tonogram.
[embodiment]
Fig. 1 is the schematic diagram according to the drying device 10 of one embodiment of the invention.Drying device 10 of the present invention is to be applied to especially be applied in the equipment of chemical vapour deposition (CVD) in the semiconductor equipment, is used for drying of semiconductor equipment, and will react the accessory substance that is produced in semiconductor equipment and remove.
As shown in Figure 1, drying device 10 comprises pipeline 150, control device 120, relay 130, vacuum valve 140 and the draw-out device 160 with vacuum hose 110, and wherein pipeline 150 is connected between draw-out device 160 and the reative cell 200.Reative cell 200 is to be connected with pipeline 150 through switch valve 170.Clamp 190 is in order to vacuum hose 110 closely is connected on the pipeline 150.According to one embodiment of the invention, draw-out device 160 can be vacuum pump (VACUUM PUMP), when starting draw-out device 160, the accessory substance that reaction forms in the semiconductor fabrication process can detach from vacuum hose 110, or the liquid or the steam that will remain in the vacuum hose 110 detach, make next semiconductor element enter semiconductor equipment before, vacuum hose 110 is dry, and makes the reative cell 200 of semiconductor equipment reach predetermined pressure.In an embodiment, can in semiconductor fabrication process, react the accessory substance that forms and detach from vacuum hose 110, or remain in that liquid in the vacuum hose 110 or steam detaches during, switch valve 170 cuts out, only the extracting vacuum flexible pipe 110.In a preferred embodiment, predetermined pressure is about 3 milli-torrs (mTORR), under this low pressure, can reach the needed vacuum degree of semiconductor fabrication process.
According to one embodiment of the invention, control device 120 can be computer or other automation equipments, in order to the unlatching of control relay 130 or close.One fluid switch 140 is set, i.e. vacuum valve, the pipeline end 154 of its definition one between fluid switch 140 and draw-out device 160 on the pipeline 150.For opening or closing, give vacuum valve 140 by control device 120 control relays 130, vacuum valve 140 is switched between opening and closed condition to transmit signal.In an embodiment, when transmitting one, relay 130 opens signal, when promptly a high current is given vacuum valve 140, then vacuum valve 140 is opened, and closes signal when relay 130 transmits one, i.e. a reduced-current, or when not transmitting electric current and giving vacuum valve 140, then vacuum valve 140 cuts out.
When vacuum valve 140 is in opening, the fluid 180 that enters from an end of pipeline, by the road 150 with vacuum hose 110, absorption by vacuum pump 160, make fluid 180 leave vacuum hose 110, follow fluid 180 this moment, accessory substance and/or liquid residual in vacuum hose 110 and the pipeline 150 can remove in the lump with fluid 180.The fluid 180 of indication (representing with the point-like thing among the figure) is carrier gas (CARRIER GAS) in an embodiment, and fluid 180 is nitrogen or other inert gases in a preferred embodiment.When switch valve 170 when opening, fluid 180 be to be flowed out by reative cell 200, by the road 150, again by vacuum pump 160 extractions.When switch valve 170 when closing, fluid 180 is for to enter pipeline 150 by a fluid supply (not shown), by vacuum pump 160 sucking-offs.
When vacuum valve 140 was in closed condition, vacuum pump 160 remained in operation, and right fluid 180 can't enter vacuum hose 110.
When carrying out drying program, vacuum pump 160 is the state of running, and set control device 120, open and close by relay 130, transmit and open and close signal to vacuum valve 140, make vacuum valve 140 between at least one first phase, be in opening, and be in closed condition at least one second phase.In a preferred embodiment, set control device 120, make vacuum valve 140 time openings or close, vacuum valve 140 is switched for several times in opening and closed condition, so, produce fluid 180 and enter vacuum hose 110 off and on, constantly residual accessory substance, fluid or the steam of disturbance vacuum hose 110, make and vacuum hose 110 residual accessory substance, fluid or steam can be removed dry vacuum hose 110 in the short time.Switch valve 170 as reative cell is to open, just said procedure can vacuum reaction chamber 200.In a preferred embodiment, fluid switch 140 at least once maintained opening about 5 to 10 minutes, and fluid switch 140 at least once maintains closed condition approximately less than 1 minute.
Fig. 2 is the flow chart according to the drying means of one embodiment of the invention.According to an embodiment, drying means of the present invention is to use the drying device 10 that Fig. 1 disclosed.Drying device 10 comprises a vacuum pump 160, a pipeline 150 and a control device 120, and wherein pipeline 150 is provided with a vacuum valve 140, and control device 120 has a relay 130, and relay 130 is connected with vacuum valve 140.The description of drying device 10 and relevant element thereof is with reference to aforementioned, do not add at this and gives unnecessary details.
In one specific embodiment of drying means of the present invention, at first provide aforesaid drying device 10,, in pipeline 150, form flowing of fluid 180 earlier, interrupt flowing of fluid 180 more off and in order to carrying out drying program for several times.At first control device 120 is passed to vacuum valve 140 1 by relay 130 and is opened signal (i.e. electrically control), an i.e. high current, vacuum valve 140 is kept between a first phase in opening, in pipeline 150, form fluid 180 mobile (step 205), when vacuum valve 140 open periods, the fluid 180 that enters from an end of pipeline, through pipeline 150 and vacuum hose 110, draw by vacuum pump 160 again, make fluid 180 leave vacuum hose 110, follow fluid 180 this moment, residual accessory substance in the vacuum hose 110, or the liquid or the steam that remain in the vacuum hose 110 can remove from vacuum hose 110 in the lump with fluid 180.
After between the first phase, control device 120 passes to vacuum valve 140 1 by relay 130 and cuts out signal, i.e. a reduced-current, or do not transmit electric current makes vacuum valve 140 keep a second phase in off position, to interrupt fluid 180 flow (step 210).When vacuum valve 140 was in closed condition, fluid 180 can't enter vacuum hose 110.In a preferred embodiment, fluid switch 140 at least once maintained opening about 5 to 10 minutes, and fluid switch 140 at least once maintains closed condition approximately less than 1 minute.So, can pass to vacuum valve 140 by relay 130 by control device 120 and open or close signal, to interrupt flowing of fluid 180 off and on, with vacuum reaction chamber 200 and vacuum hose 110.
Afterwards, measure the pressure of reative cell (not disclosing), whether reach predetermined pressure (or vacuum degree) or do not reach with the pressure (or vacuum degree) of confirming reative cell and desire dry degree (step 215).If the pressure (or vacuum degree) of reative cell does not reach predetermined pressure (or vacuum degree), it then may be the existence that steam is still arranged in the vacuum hose 110, therefore repeating step 205 is to step 215, and the pressure in reative cell (or vacuum degree) reaches predetermined pressure, as 3 milli-torrs.
Fig. 3 is for using drying device of the present invention and general drying device, time and tonogram.Wherein using the curve of measured time of general drying device (or method) and pressure is 32, is 34 and use the curve of measured time of drying device of the present invention (or method) and pressure.Fig. 3 shows, use drying device of the present invention (or method) can make that pressure descends fast in the reative cell, only need 60 minutes and reach predetermined pressure-3 milli-torr (being represented by dotted lines among the figure), and use general drying device (or method), pressure descends slower, must reach 88 minutes and just may arrive predetermined pressure-3 milli-torr.That is to say that drying device of the present invention (or method) can be at short notice removes the liquid or the steam of vacuum hose, make vacuum hose rapid draing, reative cell thereby reach the pressure of expection easily, or the purpose of predetermined vacuum degree.
Though the present invention is disclosed in preferred embodiment, so it is only in order to explanation, non-ly is intended to limit protection scope of the present invention, and any ripe this skill person does a little change and retouching when knowing to the present invention, must belong to protection scope of the present invention.
[main element symbol description]
10 drying devices
110 vacuum hoses
120 control device
130 relays
140 vacuum valves
150 pipelines
154 pipeline ends
160 vacuum pumps
170 switch valves
180 fluids
190 clamps
200 reative cells
Claims (9)
1. the drying means of a semiconductor equipment, it is characterized in that: be to use a draw-out device, a pipeline and a control device, wherein this pipeline is provided with a fluid switch, and this control device has a current switch, control this fluid switch, this drying means comprises following steps:
One fluid is provided;
Start this draw-out device;
Switching is being opened and closed to this fluid switch for several times, makes this fluid flow out this semiconductor equipment for several times through this pipeline.
2. the drying means of semiconductor equipment as claimed in claim 1 is characterized in that: this fluid switch switches between opening and closing in the step for several times, and this fluid switch is at least once kept and opened about 5 to 10 minutes.
3. the drying means of semiconductor equipment as claimed in claim 1 is characterized in that: this fluid switch switches in the step for several times between opening and closing, and this fluid switch is at least once kept and closed less than about 1 minute.
4. the drying means of semiconductor equipment as claimed in claim 1, it is characterized in that: this this fluid that provides is an inert gas or nitrogen.
5. the drying means of semiconductor equipment as claimed in claim 1, it is characterized in that: this fluid switch is being opened and is closing in the step of switching several, this control device transmits a signal via this current switch and gives this fluid switch, with the unlatching of electrical this fluid switch of control or close.
6. the drying means of semiconductor equipment as claimed in claim 5 is characterized in that: this fluid switch switches step for several times opening and close, and is by setting this controller, making this fluid timing switch open or close.
7. the drying means of semiconductor equipment as claimed in claim 1, it is characterized in that: this fluid switch is a vacuum valve.
8. the drying means of semiconductor equipment as claimed in claim 1, it is characterized in that: this pipeline is a vacuum hose.
9. the drying means of semiconductor equipment as claimed in claim 1, it is characterized in that: this current switch is a relay.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100992883A CN100447944C (en) | 2005-09-15 | 2005-09-15 | Dry device and dry method for semiconductor equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100992883A CN100447944C (en) | 2005-09-15 | 2005-09-15 | Dry device and dry method for semiconductor equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1933097A CN1933097A (en) | 2007-03-21 |
| CN100447944C true CN100447944C (en) | 2008-12-31 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2005100992883A Expired - Fee Related CN100447944C (en) | 2005-09-15 | 2005-09-15 | Dry device and dry method for semiconductor equipment |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08124870A (en) * | 1994-10-21 | 1996-05-17 | Kokusai Electric Co Ltd | Method of dry cleaning semiconductor producing apparatus |
| US5609721A (en) * | 1994-03-11 | 1997-03-11 | Fujitsu Limited | Semiconductor device manufacturing apparatus and its cleaning method |
| JPH09275095A (en) * | 1996-04-05 | 1997-10-21 | Hitachi Ltd | Process treatment method and its device |
| US6432838B1 (en) * | 1997-10-29 | 2002-08-13 | Samsung Electronics Co., Ltd | Chemical vapor deposition apparatus for manufacturing semiconductor devices, its driving method, and method of optimizing recipe of cleaning process for process chamber |
| CN1565046A (en) * | 2002-07-01 | 2005-01-12 | 财团法人地球环境产业技术研究机构 | CVD device with cleaning mechanism using fluorine gas and method of cleaning CVD device with fluorine gas |
| US6903025B2 (en) * | 2001-08-30 | 2005-06-07 | Kabushiki Kaisha Toshiba | Method of purging semiconductor manufacturing apparatus and method of manufacturing semiconductor device |
-
2005
- 2005-09-15 CN CNB2005100992883A patent/CN100447944C/en not_active Expired - Fee Related
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5609721A (en) * | 1994-03-11 | 1997-03-11 | Fujitsu Limited | Semiconductor device manufacturing apparatus and its cleaning method |
| JPH08124870A (en) * | 1994-10-21 | 1996-05-17 | Kokusai Electric Co Ltd | Method of dry cleaning semiconductor producing apparatus |
| JPH09275095A (en) * | 1996-04-05 | 1997-10-21 | Hitachi Ltd | Process treatment method and its device |
| US6432838B1 (en) * | 1997-10-29 | 2002-08-13 | Samsung Electronics Co., Ltd | Chemical vapor deposition apparatus for manufacturing semiconductor devices, its driving method, and method of optimizing recipe of cleaning process for process chamber |
| US6903025B2 (en) * | 2001-08-30 | 2005-06-07 | Kabushiki Kaisha Toshiba | Method of purging semiconductor manufacturing apparatus and method of manufacturing semiconductor device |
| CN1565046A (en) * | 2002-07-01 | 2005-01-12 | 财团法人地球环境产业技术研究机构 | CVD device with cleaning mechanism using fluorine gas and method of cleaning CVD device with fluorine gas |
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| Publication number | Publication date |
|---|---|
| CN1933097A (en) | 2007-03-21 |
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