CN112827341A - Waste gas treatment system of semiconductor process and waste gas treatment method thereof - Google Patents
Waste gas treatment system of semiconductor process and waste gas treatment method thereof Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 126
- 239000002912 waste gas Substances 0.000 title claims abstract description 76
- 239000004065 semiconductor Substances 0.000 title claims abstract description 62
- 238000005406 washing Methods 0.000 claims abstract description 60
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 58
- NXHILIPIEUBEPD-UHFFFAOYSA-H tungsten hexafluoride Chemical compound F[W](F)(F)(F)(F)F NXHILIPIEUBEPD-UHFFFAOYSA-H 0.000 claims abstract description 48
- 238000002485 combustion reaction Methods 0.000 claims abstract description 38
- 238000006460 hydrolysis reaction Methods 0.000 claims abstract description 20
- 230000007062 hydrolysis Effects 0.000 claims abstract description 18
- 238000004519 manufacturing process Methods 0.000 claims abstract description 14
- 239000007789 gas Substances 0.000 claims description 54
- 238000012545 processing Methods 0.000 claims description 10
- 230000005611 electricity Effects 0.000 claims description 4
- 238000005201 scrubbing Methods 0.000 claims description 4
- 238000012423 maintenance Methods 0.000 abstract description 17
- 238000005260 corrosion Methods 0.000 abstract description 8
- 230000007797 corrosion Effects 0.000 abstract description 8
- 230000002035 prolonged effect Effects 0.000 abstract description 7
- 239000000126 substance Substances 0.000 description 5
- 239000006227 byproduct Substances 0.000 description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 3
- QKCGXXHCELUCKW-UHFFFAOYSA-N n-[4-[4-(dinaphthalen-2-ylamino)phenyl]phenyl]-n-naphthalen-2-ylnaphthalen-2-amine Chemical compound C1=CC=CC2=CC(N(C=3C=CC(=CC=3)C=3C=CC(=CC=3)N(C=3C=C4C=CC=CC4=CC=3)C=3C=C4C=CC=CC4=CC=3)C3=CC4=CC=CC=C4C=C3)=CC=C21 QKCGXXHCELUCKW-UHFFFAOYSA-N 0.000 description 3
- 229910000077 silane Inorganic materials 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000002440 industrial waste Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910001930 tungsten oxide Inorganic materials 0.000 description 1
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- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D53/00—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
- B01D53/34—Chemical or biological purification of waste gases
- B01D53/74—General processes for purification of waste gases; Apparatus or devices specially adapted therefor
- B01D53/77—Liquid phase processes
- B01D53/78—Liquid phase processes with gas-liquid contact
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D53/00—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
- B01D53/34—Chemical or biological purification of waste gases
- B01D53/46—Removing components of defined structure
- B01D53/68—Halogens or halogen compounds
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F23—COMBUSTION APPARATUS; COMBUSTION PROCESSES
- F23G—CREMATION FURNACES; CONSUMING WASTE PRODUCTS BY COMBUSTION
- F23G7/00—Incinerators or other apparatus for consuming industrial waste, e.g. chemicals
- F23G7/06—Incinerators or other apparatus for consuming industrial waste, e.g. chemicals of waste gases or noxious gases, e.g. exhaust gases
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N33/00—Investigating or analysing materials by specific methods not covered by groups G01N1/00 - G01N31/00
- G01N33/0004—Gaseous mixtures, e.g. polluted air
- G01N33/0009—General constructional details of gas analysers, e.g. portable test equipment
- G01N33/0027—General constructional details of gas analysers, e.g. portable test equipment concerning the detector
- G01N33/0036—General constructional details of gas analysers, e.g. portable test equipment concerning the detector specially adapted to detect a particular component
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N33/00—Investigating or analysing materials by specific methods not covered by groups G01N1/00 - G01N31/00
- G01N33/0004—Gaseous mixtures, e.g. polluted air
- G01N33/0009—General constructional details of gas analysers, e.g. portable test equipment
- G01N33/0062—General constructional details of gas analysers, e.g. portable test equipment concerning the measuring method or the display, e.g. intermittent measurement or digital display
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02C—CAPTURE, STORAGE, SEQUESTRATION OR DISPOSAL OF GREENHOUSE GASES [GHG]
- Y02C20/00—Capture or disposal of greenhouse gases
- Y02C20/30—Capture or disposal of greenhouse gases of perfluorocarbons [PFC], hydrofluorocarbons [HFC] or sulfur hexafluoride [SF6]
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Abstract
The invention provides a waste gas treatment system of a semiconductor process and a waste gas treatment method thereof, wherein the waste gas treatment system comprises the following steps: the device comprises a first sensor, a first three-way valve, a combustion chamber, a water washing branch and a water washing chamber; the first outlet of the first three-way valve is communicated with the water washing chamber through the combustion chamber, and the second outlet of the first three-way valve is communicated with the water washing chamber through the water washing branch. According to the waste gas treatment system for the semiconductor process, the washing branch and the first three-way valve are additionally arranged in the waste gas treatment system, so that the switching of the first three-way valve is linked with a signal detected by the first sensor, when the first sensor detects that tungsten hexafluoride reaches a preset concentration, the first three-way valve switches the waste gas to the washing branch for hydrolysis, and when the first sensor detects that the tungsten hexafluoride does not reach the preset concentration, the first three-way valve switches the waste gas to the combustion chamber for treatment, so that the corrosion of the waste gas to the combustion chamber is avoided, the treatment efficiency and the utilization rate of a process machine table are improved, the maintenance period of equipment is prolonged, and the influence on the operation of a production line is reduced.
Description
Technical Field
The invention relates to the field of semiconductor industrial waste gas treatment, in particular to a waste gas treatment system of a semiconductor process and a waste gas treatment method thereof.
Background
In the WCVD process of semiconductor, tungsten is commonly used as a highly conductive interconnect metal, via hole between metal layers and contact hole for vertical contact, and isolation layer between aluminum and silicon. The main reaction gases of the most common WCVD process are tungsten hexafluoride, hydrogen, silane, and nitrogen trifluoride.
The gas produced by the process has a great challenge on semiconductor waste gas treatment equipment, the maintenance period of the equipment is different from 7 days to 10 days, and the blockage is generated on a factory waste gas discharge pipeline, so that the operation of a production line of the semiconductor and the improvement of the capacity are seriously influenced.
The process waste gas involved in the process is toxic and harmful gas, has serious harm to human bodies and the environment and can be discharged only after being treated. The problem of short maintenance cycle of waste gas treatment equipment for treating the process gas is increasingly outstanding and needs to be solved urgently.
Disclosure of Invention
The embodiment of the invention provides a waste gas treatment system of a semiconductor process and a waste gas treatment method thereof, which are used for solving the problems, realizing the treatment of process waste gas and effectively prolonging the maintenance period of waste gas treatment equipment.
The embodiment of the invention provides a waste gas treatment system of a semiconductor process, which comprises:
the device comprises a first sensor, a first three-way valve, a combustion chamber, a water washing branch and a water washing chamber;
the first export of first three-way valve passes through the combustion chamber with wash the room intercommunication, the second export of first three-way valve passes through wash the water branch road with wash the room intercommunication, first sensor with first three-way valve electricity is connected, in order when first sensor detects tungsten hexafluoride and reaches preset concentration, will the entry of first three-way valve and its second export intercommunication, and when first sensor detects tungsten hexafluoride and does not reach preset concentration, will the entry of first three-way valve and its first export intercommunication.
According to the exhaust gas treatment system of the semiconductor process provided by the invention, the exhaust gas treatment system of the semiconductor process further comprises: an exhaust gas line; the waste gas pipeline is communicated with an outlet of the water washing chamber.
According to the exhaust gas treatment system of the semiconductor process provided by the invention, the exhaust gas treatment system of the semiconductor process further comprises: a connecting pipe; the waste gas pipeline is communicated with an outlet of the water scrubbing chamber through a connecting pipe.
According to the exhaust gas treatment system of the semiconductor process provided by the invention, the exhaust gas treatment system of the semiconductor process further comprises: a water tank;
the first outlet of the first three-way valve is communicated with the combustion chamber, the water tank and the water washing chamber, and the second outlet of the first three-way valve is communicated with the water washing branch, the water tank and the water washing chamber.
According to the exhaust gas treatment system of the semiconductor process provided by the invention, the exhaust gas treatment system of the semiconductor process further comprises: a process machine for production and processing; the first sensor is installed in the process machine, and the process machine is communicated with the inlet of the first three-way valve.
According to the waste gas treatment system of the semiconductor process provided by the invention, the number of the process machines is multiple, and the waste gas treatment system of the semiconductor process further comprises: a second three-way valve;
the inlet of the second three-way valve is communicated with one of the process machines, the first outlet of the second three-way valve is communicated with the inlet of the first three-way valve, and the second outlet of the second three-way valve is communicated with any other process machine.
According to the exhaust gas treatment system of the semiconductor process provided by the invention, the exhaust gas treatment system of the semiconductor process further comprises: a second sensor mounted in the process tool; the second sensor is electrically connected with the second three-way valve so as to communicate the first outlet of the second three-way valve with the inlet of the first three-way valve when the second sensor detects that the waste gas treatment system of the semiconductor process is normal; and when the second sensor detects that the exhaust gas treatment system of the semiconductor process is maintained or is alarmed to be shut down, the second outlet of the second three-way valve is communicated with any other process machine.
The embodiment of the invention also provides a method for treating the waste gas of the semiconductor process, which comprises the following steps: detecting the concentration of tungsten hexafluoride with a first sensor;
if the first sensor detects that the tungsten hexafluoride reaches the preset concentration, communicating an inlet of the first three-way valve with a second outlet of the first three-way valve so as to carry out hydrolysis treatment through a washing branch;
if the first sensor detects that the tungsten hexafluoride does not reach the preset concentration, the inlet of the first three-way valve is communicated with the first outlet of the first three-way valve, and the tungsten hexafluoride is processed through the combustion chamber.
According to the method for treating the exhaust gas of the semiconductor process, the step of detecting the concentration of the tungsten hexafluoride by using the first sensor further comprises the following steps:
if the second sensor detects that the waste gas treatment system of the semiconductor process is normal, the first outlet of the second three-way valve is communicated with the inlet of the first three-way valve;
and if the second sensor detects that the exhaust gas treatment system of the semiconductor process is maintained or is alarmed to be shut down, the second outlet of the second three-way valve is communicated with any other process machine.
According to the waste gas treatment system for the semiconductor process, the washing branch and the first three-way valve are additionally arranged in the waste gas treatment system, so that the switching of the first three-way valve is linked with a signal detected by the first sensor, when the first sensor detects that tungsten hexafluoride reaches a preset concentration, the first three-way valve switches the waste gas to the washing branch for hydrolysis, and when the first sensor detects that the tungsten hexafluoride does not reach the preset concentration, the first three-way valve switches the waste gas to the combustion chamber for treatment, so that the corrosion of the waste gas to the combustion chamber is avoided, the treatment efficiency and the utilization rate of a process machine table are improved, the maintenance period of equipment is prolonged, and the influence on the operation of a production line is reduced.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and those skilled in the art can also obtain other drawings according to the drawings without creative efforts.
FIG. 1 is a schematic structural diagram of an exhaust gas treatment system for a semiconductor process according to an embodiment of the present invention;
FIG. 2 is a schematic flow chart of a method of controlling an exhaust gas treatment system of a semiconductor process;
FIG. 3 is a schematic flow chart of a method for treating an exhaust gas from a semiconductor process according to an embodiment of the present invention;
wherein, 1, a first three-way valve; 2. a combustion chamber; 3. washing the branch; 4. a water washing chamber; 5. an exhaust gas line; 6. a connecting pipe; 7. a water tank; 8. a second three-way valve.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The existing waste gas treatment equipment only depends on a combination mode of a combustion chamber and a washing chamber in the process, as shown in figure 1, and the problems of short maintenance period and blockage of a factory waste gas discharge pipeline cannot be effectively solved.
The process is as follows: the process waste gas of the process machine is discharged to a combustion chamber of a waste gas treatment system through a vacuum pump for treatment, and the waste gas after the combustion treatment is washed through a water washing chamber and then discharged to a waste gas pipeline.
And due to the presence in the process off-gas: tungsten hexafluoride (CAS NO.7783-82-6) gas is acidic corrosive; the substance is non-combustible and non-combustion-supporting; easy hydrolysis and production of hydrofluoric acid and tungsten oxide. It is known from the chemical nature of the gas that it cannot be disposed of in the combustion chamber, and only in the washing chamber is subjected to hydrolysis, with the result that the substance risks corrosion of the parts of the plant at the front end of the washing chamber.
Since the treatment path of the washing chamber is short and only one time of the washing chamber treatment is needed, the products generated after the tungsten hexafluoride hydrolysis are all blocked in the washing chamber, and the maintenance period is short. As the water scrubbing chamber is connected with the waste gas pipeline, a small part of byproducts generated after the tungsten hexafluoride is hydrolyzed are discharged into the waste gas pipeline along with the gas flow to cause blockage and accumulation.
In order to solve the above problem, an embodiment of the present invention provides an exhaust gas treatment system for a semiconductor process, which is described below with reference to fig. 2 and includes: the device comprises a first sensor, a first three-way valve 1, a combustion chamber 2, a water washing branch 3 and a water washing chamber 4. The first three-way valve 1 is provided with one inlet and two switchable outlets. First export of first three-way valve 1 passes through combustion chamber 2 and rinsing room 4 intercommunication, the second export of first three-way valve 1 passes through rinsing branch 3 and rinsing room 4 intercommunication, first sensor is connected with first three-way valve 1 electricity, first three-way valve 1 can choose for use to be electronic three-way valve, the aperture that can control the valve according to the condition and the position of intercommunication, in order when first sensor detects tungsten hexafluoride and reaches preset concentration, with the entry of first three-way valve 1 and the second export intercommunication of first three-way valve 1, and when first sensor detects tungsten hexafluoride and does not reach preset concentration, with the entry of first three-way valve 1 and the first export intercommunication of first three-way valve 1.
In this embodiment, a washing branch is added to the exhaust gas treatment system, and the washing branch is switched with the combustion chamber through the first three-way valve 1. In the working process, if the first sensor detects that the tungsten hexafluoride reaches the preset concentration, for example, the concentration is greater than 1%, the inlet of the first three-way valve 1 is communicated with the second outlet of the first three-way valve 1, and the first three-way valve 1 switches the waste gas to the washing branch 3 for hydrolysis treatment (WF)6+3H20＝6HF+WO3) The water washing branch 3 is internally covered with water spray, and byproducts generated after tungsten hexafluoride hydrolysis are discharged along with water flow. Due to the addition of the water washing branch 3, the hydrolysis reaction path of tungsten hexafluoride is prolonged, and the hydrolysis amount of the back-end water washing cavity is reduced, so that the blockage of the water washing chamber 4 is reduced. The tungsten hexafluoride is directly hydrolyzed in the water washing branch 3, so that the corrosion to the combustion chamber 2 is avoided. If the first sensor detects that the tungsten hexafluoride does not reach the predetermined concentration,for example, at a concentration of less than 1%, the inlet of the first three-way valve 1 communicates with the first outlet of the first three-way valve 1, and the first three-way valve 1 switches the exhaust gas to the combustion chamber 2 for treatment, so that the other gases of the process (hydrogen, silane and nitrogen trifluoride) enter the combustion chamber 2 for treatment. The specific treatment mode is carried out according to the physical and chemical properties of the process waste gas, so that the treatment efficiency and the machine utilization rate can be improved, the maintenance period of the equipment is prolonged, and the influence on the operation of a production line is reduced.
According to the waste gas treatment system for the semiconductor process, provided by the embodiment of the invention, the washing branch and the first three-way valve are additionally arranged in the waste gas treatment system, so that the switching of the first three-way valve is linked with a signal detected by the first sensor, when the first sensor detects that tungsten hexafluoride reaches the preset concentration, the first three-way valve switches the waste gas to the washing branch for hydrolysis, and when the first sensor detects that the tungsten hexafluoride does not reach the preset concentration, the first three-way valve switches the waste gas to the combustion chamber for treatment, so that the corrosion of the waste gas to the combustion chamber is avoided, the treatment efficiency and the utilization rate of a process machine table are improved, the maintenance period of equipment is prolonged, and the influence on the operation of a production line is reduced.
Based on the above embodiment, as shown in fig. 2, the exhaust gas treatment system of the semiconductor process further includes: an exhaust gas line 5 and a connecting pipe 6. The exhaust gas line 5 communicates with the outlet of the water scrubbing chamber 4 via a connecting pipe 6. The exhaust gas after being washed by the washing chamber 4 can be finally discharged into the exhaust gas pipeline 5 through the connecting pipe 6.
Wherein. The exhaust gas treatment system of the semiconductor process further includes: a water tank 7. The first outlet of the first three-way valve 1 is communicated with the washing chamber 4 through the combustion chamber 2 and the water tank 7, and the second outlet of the first three-way valve 1 is communicated with the washing chamber 4 through the washing branch 3 and the water tank 7. The by-product of the hydrolysis of tungsten fluoride in the water wash branch 3 is discharged with the water flow into the water tank 7.
In this embodiment, the exhaust gas treatment system for semiconductor process further includes: a processing machine (not shown) for production. The first sensor is installed in the process machine, and the process machine is communicated with the inlet of the first three-way valve 1.
In the actual production process, the waste gas treatment system with the number of the process machine platforms being a plurality of semiconductor processes further comprises: a second three-way valve 8. The second three-way valve 8 is provided with one inlet and two switchable outlets. The second three-way valve 8 can be selected as an electric three-way valve, and the opening degree and the communication position of the valve can be controlled according to the situation. The inlet of the second three-way valve 8 is communicated with one of the process machines, the first outlet of the second three-way valve 8 is communicated with the inlet of the first three-way valve, and the second outlet of the second three-way valve is communicated with any other process machine, so that the waste gas can be discharged to other process machines through the switching of the second three-way valve 8.
Wherein, the exhaust-gas treatment system of semiconductor technology still includes: a second sensor installed in the process machine. The second sensor is electrically connected with the second three-way valve 8 so as to communicate the first outlet of the second three-way valve 8 with the inlet of the first three-way valve when the second sensor detects that the exhaust gas treatment system of the semiconductor process is normal; and when the second sensor detects the maintenance or alarm breakdown of the exhaust gas treatment system of the semiconductor process, communicating the second outlet of the second three-way valve 8 with any other process machine.
According to the waste gas treatment system for the semiconductor process, provided by the embodiment of the invention, the water washing branch and the first three-way valve are additionally arranged in the waste gas treatment system, so that the switching of the first three-way valve is linked with a signal detected by the first sensor, when the first sensor detects that tungsten hexafluoride reaches the preset concentration, the first three-way valve switches the waste gas to the water washing branch for hydrolysis treatment, and when the first sensor detects that the tungsten hexafluoride does not reach the preset concentration, the first three-way valve switches the waste gas to the combustion chamber for treatment, so that the corrosion of the waste gas to the combustion chamber is avoided, a specific treatment mode is carried out according to the physicochemical property of the process waste gas, the treatment efficiency and the machine utilization rate can be improved, the maintenance period of equipment is prolonged, and the influence on the operation of a production. In addition, when the waste gas treatment system of the semiconductor process needs maintenance or alarm downtime occurs, the second three-way valve of the waste gas treatment system is switched, and the process waste gas can be switched to other standby process machines.
An embodiment of the present invention further provides a method for treating an exhaust gas from a semiconductor process, where the method is used for treating an exhaust gas treatment system of the semiconductor process, as shown in fig. 2, the exhaust gas treatment system of the semiconductor process includes: the device comprises a first sensor, a first three-way valve 1, a combustion chamber 2, a water washing branch 3 and a water washing chamber 4. The first export of first three-way valve 1 passes through combustion chamber 2 and rinsing room 4 intercommunication, the second export of first three-way valve 1 passes through rinsing branch 3 and rinsing room 4 intercommunication, first sensor is connected with first three-way valve 1 electricity, in order when first sensor detects tungsten hexafluoride and reaches the concentration of predetermineeing, with the entry of first three-way valve 1 and the second export intercommunication of first three-way valve 1, and when first sensor detects tungsten hexafluoride and does not reach the concentration of predetermineeing, with the entry of first three-way valve 1 and the first export intercommunication of first three-way valve 1. The specific structure can refer to the above embodiments, and is not described herein.
As shown in fig. 3, the method for treating an exhaust gas of a semiconductor process includes the steps of:
s1: the concentration of tungsten hexafluoride is detected using a first sensor.
S2: if the first sensor detects that the tungsten hexafluoride reaches the preset concentration, the inlet of the first three-way valve is communicated with the second outlet of the first three-way valve so as to carry out hydrolysis treatment through the washing branch.
S3: if the first sensor detects that the tungsten hexafluoride does not reach the preset concentration, the inlet of the first three-way valve is communicated with the first outlet of the first three-way valve, and the tungsten hexafluoride is processed through the combustion chamber.
Wherein, step S1 is preceded by: if the second sensor detects that the exhaust gas treatment system of the semiconductor process is normal, the first outlet of the second three-way valve 8 is communicated with the inlet of the first three-way valve 1. And if the second sensor detects the maintenance or alarm breakdown of the exhaust gas treatment system of the semiconductor process, the second outlet of the second three-way valve 8 is communicated with any other process machine.
Specifically, if the first sensor detects that the concentration of tungsten hexafluoride reaches a predetermined concentration, for example, the concentration is greater than 1%, the inlet of the first three-way valve 1 is communicated with the second outlet of the first three-way valve 1, and the first three-way valve 1 switches the exhaust gas to the washing branch 3 for hydrolysis treatment (WF)6+3H20＝6HF+WO3) The water washing branch 3 is internally covered with water spray, and byproducts generated after tungsten hexafluoride hydrolysis are discharged along with water flow. Due to the addition of water washingAnd the branch 3 prolongs the hydrolysis reaction path of the tungsten hexafluoride, and reduces the hydrolysis amount of the back-end water washing cavity, thereby reducing the blockage of the water washing chamber 4. The tungsten hexafluoride is directly hydrolyzed in the water washing branch 3, so that the corrosion to the combustion chamber 2 is avoided. If the first sensor detects that the tungsten hexafluoride does not reach the predetermined concentration, for example, the concentration is less than 1%, the inlet of the first three-way valve 1 is communicated with the first outlet of the first three-way valve 1, and the first three-way valve 1 switches the exhaust gas to the combustion chamber 2 for treatment, so that other gases (hydrogen, silane, and nitrogen trifluoride) of the process enter the combustion chamber 2 for treatment. The specific treatment mode is carried out according to the physical and chemical properties of the process waste gas, so that the treatment efficiency and the machine utilization rate can be improved, the maintenance period of the equipment is prolonged, and the influence on the operation of a production line is reduced. The method can prolong the maintenance period of the equipment from 7 to 10 days to 30 days according to the actual field application, effectively solves the pain point of the waste gas treatment equipment in the process, and directly improves the operation efficiency of a production line.
In summary, in the method for processing waste gas of semiconductor process provided in the embodiment of the present invention, the washing branch and the first three-way valve are added in the waste gas processing system, so that the switching of the first three-way valve is linked with the signal detected by the first sensor, when the first sensor detects that tungsten hexafluoride reaches the preset concentration, the first three-way valve switches the waste gas to the washing branch for hydrolysis, and when the first sensor detects that tungsten hexafluoride does not reach the preset concentration, the first three-way valve switches the waste gas to the combustion chamber for processing, thereby avoiding corrosion of the combustion chamber by the waste gas, and performing a specific processing manner according to the physicochemical property of the process waste gas can improve the processing efficiency and the machine utilization rate, prolong the maintenance period of the equipment, and reduce the influence on the operation of the production line. In addition, when the treatment method needs maintenance or alarm downtime occurs, the second three-way valve of the waste gas treatment system is switched, and the process waste gas can be switched to other standby process machines.
Finally, it should be noted that: the above examples are only intended to illustrate the technical solution of the present invention, but not to limit it; although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; and such modifications or substitutions do not depart from the spirit and scope of the corresponding technical solutions of the embodiments of the present invention.
Claims (9)
1. An exhaust treatment system for semiconductor processing, comprising:
the device comprises a first sensor, a first three-way valve, a combustion chamber, a water washing branch and a water washing chamber;
the first export of first three-way valve passes through the combustion chamber with wash the room intercommunication, the second export of first three-way valve passes through wash the water branch road with wash the room intercommunication, first sensor with first three-way valve electricity is connected, in order when first sensor detects tungsten hexafluoride and reaches preset concentration, will the entry of first three-way valve and its second export intercommunication, and when first sensor detects tungsten hexafluoride and does not reach preset concentration, will the entry of first three-way valve and its first export intercommunication.
2. The semiconductor process exhaust treatment system of claim 1, further comprising: an exhaust gas line; the waste gas pipeline is communicated with an outlet of the water washing chamber.
3. The semiconductor process exhaust treatment system of claim 2, further comprising: a connecting pipe; the waste gas pipeline is communicated with the outlet of the water scrubbing chamber through the connecting pipe.
4. The semiconductor process exhaust treatment system of claim 1, further comprising: a water tank;
the first outlet of the first three-way valve is communicated with the combustion chamber, the water tank and the water washing chamber, and the second outlet of the first three-way valve is communicated with the water washing branch, the water tank and the water washing chamber.
5. The semiconductor process exhaust gas treatment system according to any one of claims 1 to 4, further comprising: a process machine for production and processing; the first sensor is installed in the process machine, and the process machine is communicated with the inlet of the first three-way valve.
6. The system of claim 5, wherein the number of the processing tools is plural, and the system further comprises: a second three-way valve;
the inlet of the second three-way valve is communicated with one of the process machines, the first outlet of the second three-way valve is communicated with the inlet of the first three-way valve, and the second outlet of the second three-way valve is communicated with any other process machine.
7. The semiconductor process exhaust treatment system of claim 6, further comprising: a second sensor mounted in the process tool; the second sensor is electrically connected with the second three-way valve so as to communicate the first outlet of the second three-way valve with the inlet of the first three-way valve when the second sensor detects that the waste gas treatment system of the semiconductor process is normal; and when the second sensor detects that the exhaust gas treatment system of the semiconductor process is maintained or is alarmed to be shut down, the second outlet of the second three-way valve is communicated with any other process machine.
8. A method for treating waste gas of semiconductor process is characterized by comprising the following steps:
detecting the concentration of tungsten hexafluoride with a first sensor;
if the first sensor detects that the tungsten hexafluoride reaches the preset concentration, communicating an inlet of the first three-way valve with a second outlet of the first three-way valve so as to carry out hydrolysis treatment through a washing branch;
if the first sensor detects that the tungsten hexafluoride does not reach the preset concentration, the inlet of the first three-way valve is communicated with the first outlet of the first three-way valve, and the tungsten hexafluoride is processed through the combustion chamber.
9. The method of claim 8, wherein the step of detecting the concentration of tungsten hexafluoride with the first sensor is preceded by the step of:
if the second sensor detects that the waste gas treatment system of the semiconductor process is normal, the first outlet of the second three-way valve is communicated with the inlet of the first three-way valve;
and if the second sensor detects that the exhaust gas treatment system of the semiconductor process is maintained or is alarmed to be shut down, the second outlet of the second three-way valve is communicated with any other process machine.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113446609A (en) * | 2021-07-05 | 2021-09-28 | 北京京仪自动化装备技术股份有限公司 | System, method and apparatus for processing cleaning gas generated in semiconductor process |
| CN113719845A (en) * | 2021-09-02 | 2021-11-30 | 湖南翰坤实业有限公司 | Environment-friendly processing device and method |
| CN115826548A (en) * | 2023-02-22 | 2023-03-21 | 中国电子工程设计院有限公司 | Method and device for dynamically simulating waste gas treatment of semiconductor production system |
| CN116441048A (en) * | 2023-06-06 | 2023-07-18 | 吴联权 | Flue gas denitration and desulfurization treatment process based on front-mounted fan |
Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003236337A (en) * | 2002-02-14 | 2003-08-26 | Showa Denko Kk | Method and apparatus for treating exhaust gas |
| TW201328768A (en) * | 2012-01-13 | 2013-07-16 | Auria Solar Co Ltd | Exhaust controlling method |
| CN204034529U (en) * | 2014-08-07 | 2014-12-24 | 汉科系统科技股份有限公司 | The treatment facility of semiconductor waste gas |
| CN204502753U (en) * | 2015-03-22 | 2015-07-29 | 富阳鸿祥技术服务有限公司 | A kind of system processing chemical plant organic exhaust gas |
| CN104984649A (en) * | 2015-06-14 | 2015-10-21 | 黄志强 | Purification system suitable for waste gas treatment and control method thereof |
| CN107469514A (en) * | 2017-08-01 | 2017-12-15 | 武汉华星光电技术有限公司 | A kind of exhaust gas processing device of Dry etching equipment |
| CN107626173A (en) * | 2016-07-18 | 2018-01-26 | 东服企业股份有限公司 | Method and device for capturing product after sintering reaction of waste gas in semiconductor manufacturing process |
| CN108619866A (en) * | 2018-07-18 | 2018-10-09 | 安徽京仪自动化装备技术有限公司 | It is a kind of for acid gas-containing, dust particles exhaust gas front-end purification unit |
| CN208990398U (en) * | 2018-09-05 | 2019-06-18 | 宁波中瑞环保科技有限公司 | A kind of intermittence, the processing unit of low discharge, middle and high concentration VOCs exhaust gas |
| CN210473565U (en) * | 2019-05-17 | 2020-05-08 | 安徽京仪自动化装备技术有限公司 | Waste gas treatment equipment suitable for semiconductor manufacturing process |
| CN111578295A (en) * | 2020-03-31 | 2020-08-25 | 中国船舶重工集团公司第七一八研究所 | Burning washing type semiconductor waste gas treatment device |
| CN111810971A (en) * | 2020-07-15 | 2020-10-23 | 上海环境保护有限公司 | Low-concentration organic waste gas treatment method |
-
2020
- 2020-12-25 CN CN202011566842.5A patent/CN112827341B/en active Active
Patent Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003236337A (en) * | 2002-02-14 | 2003-08-26 | Showa Denko Kk | Method and apparatus for treating exhaust gas |
| TW201328768A (en) * | 2012-01-13 | 2013-07-16 | Auria Solar Co Ltd | Exhaust controlling method |
| CN204034529U (en) * | 2014-08-07 | 2014-12-24 | 汉科系统科技股份有限公司 | The treatment facility of semiconductor waste gas |
| CN204502753U (en) * | 2015-03-22 | 2015-07-29 | 富阳鸿祥技术服务有限公司 | A kind of system processing chemical plant organic exhaust gas |
| CN104984649A (en) * | 2015-06-14 | 2015-10-21 | 黄志强 | Purification system suitable for waste gas treatment and control method thereof |
| CN107626173A (en) * | 2016-07-18 | 2018-01-26 | 东服企业股份有限公司 | Method and device for capturing product after sintering reaction of waste gas in semiconductor manufacturing process |
| CN107469514A (en) * | 2017-08-01 | 2017-12-15 | 武汉华星光电技术有限公司 | A kind of exhaust gas processing device of Dry etching equipment |
| CN108619866A (en) * | 2018-07-18 | 2018-10-09 | 安徽京仪自动化装备技术有限公司 | It is a kind of for acid gas-containing, dust particles exhaust gas front-end purification unit |
| CN208990398U (en) * | 2018-09-05 | 2019-06-18 | 宁波中瑞环保科技有限公司 | A kind of intermittence, the processing unit of low discharge, middle and high concentration VOCs exhaust gas |
| CN210473565U (en) * | 2019-05-17 | 2020-05-08 | 安徽京仪自动化装备技术有限公司 | Waste gas treatment equipment suitable for semiconductor manufacturing process |
| CN111578295A (en) * | 2020-03-31 | 2020-08-25 | 中国船舶重工集团公司第七一八研究所 | Burning washing type semiconductor waste gas treatment device |
| CN111810971A (en) * | 2020-07-15 | 2020-10-23 | 上海环境保护有限公司 | Low-concentration organic waste gas treatment method |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113446609A (en) * | 2021-07-05 | 2021-09-28 | 北京京仪自动化装备技术股份有限公司 | System, method and apparatus for processing cleaning gas generated in semiconductor process |
| CN113719845A (en) * | 2021-09-02 | 2021-11-30 | 湖南翰坤实业有限公司 | Environment-friendly processing device and method |
| CN113719845B (en) * | 2021-09-02 | 2023-12-26 | 湖南翰坤实业有限公司 | Environment-friendly treatment device and method |
| CN115826548A (en) * | 2023-02-22 | 2023-03-21 | 中国电子工程设计院有限公司 | Method and device for dynamically simulating waste gas treatment of semiconductor production system |
| CN116441048A (en) * | 2023-06-06 | 2023-07-18 | 吴联权 | Flue gas denitration and desulfurization treatment process based on front-mounted fan |
| CN116441048B (en) * | 2023-06-06 | 2023-10-13 | 吴联权 | Flue gas denitration and desulfurization treatment process based on front-mounted fan |
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