CN113446609A - System, method and apparatus for processing cleaning gas generated in semiconductor process - Google Patents
System, method and apparatus for processing cleaning gas generated in semiconductor process Download PDFInfo
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- CN113446609A CN113446609A CN202110756847.2A CN202110756847A CN113446609A CN 113446609 A CN113446609 A CN 113446609A CN 202110756847 A CN202110756847 A CN 202110756847A CN 113446609 A CN113446609 A CN 113446609A
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F23—COMBUSTION APPARATUS; COMBUSTION PROCESSES
- F23G—CREMATION FURNACES; CONSUMING WASTE PRODUCTS BY COMBUSTION
- F23G7/00—Incinerators or other apparatus for consuming industrial waste, e.g. chemicals
- F23G7/06—Incinerators or other apparatus for consuming industrial waste, e.g. chemicals of waste gases or noxious gases, e.g. exhaust gases
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F23—COMBUSTION APPARATUS; COMBUSTION PROCESSES
- F23G—CREMATION FURNACES; CONSUMING WASTE PRODUCTS BY COMBUSTION
- F23G5/00—Incineration of waste; Incinerator constructions; Details, accessories or control therefor
- F23G5/50—Control or safety arrangements
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F23—COMBUSTION APPARATUS; COMBUSTION PROCESSES
- F23G—CREMATION FURNACES; CONSUMING WASTE PRODUCTS BY COMBUSTION
- F23G2209/00—Specific waste
- F23G2209/14—Gaseous waste or fumes
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Abstract
A system, method and apparatus for processing a cleaning gas generated in a semiconductor manufacturing process is provided. The method comprises the following steps: responding to a signal that the process gas sent by the semiconductor process mainframe is clean gas, and enabling the clean gas to enter the waste gas treatment device; regulating the flow of methane and compressed dry air to feed the methane and the compressed dry air into a burner of the waste gas treatment device in proportion, and combusting the methane and the compressed dry air in the burner to generate heat; the nitrogen trifluoride in the cleaning gas is reacted in the exhaust gas treatment device under heat to be treated. The technical scheme for processing the cleaning gas generated in the semiconductor manufacturing process can accurately judge the time for processing the cleaning gas through the communication with main process equipment, and can control the flow of methane and compressed dry air, thereby adjusting the combustion temperature and effectively processing the nitrogen trifluoride in the cleaning gas.
Description
Technical Field
The present application relates to semiconductor process waste gas purification technology, and more particularly, to a system, method and apparatus for processing clean gas generated in a semiconductor process.
Background
In the development of semiconductor science and technology, a large amount of toxic, corrosive and flammable special gases, chemicals, organic solvents and other raw materials are used in the semiconductor manufacturing process, and the exhaust gas generated by the substances may cause accidents such as air leakage, fire explosion and the like due to air pipe blockage, pipeline corrosion and the like in the lengthy exhaust process, so that the waste gas needs to be treated in a waste gas treatment device (Local Scrubber).
The cavity of the main process equipment needs to be periodically maintained, and at the moment, a large amount of gas is needed to be blown and swept, so that the temperature of the waste gas treatment environment in the cavity of the waste gas treatment equipment is reduced. The gas generated after purging is called clean gas (clean gas), and contains a large amount of toxic gas such as nitrogen trifluoride.
The existing waste gas treatment device can not effectively treat clean gas, so that toxic gas is discharged into the atmosphere, and environmental pollution is caused.
Disclosure of Invention
In view of the deficiencies of the prior art, the present application provides a process for treating a cleaning gas generated during a semiconductor manufacturing process, such that the cleaning gas is effectively treated.
A first object of the present application is to provide a system for treating a cleaning gas generated in a semiconductor process, the cleaning gas comprising nitrogen trifluoride, the system comprising:
the combustion pipeline comprises a methane inlet pipeline provided with a methane mass flow controller and a compressed dry air pipeline provided with a compressed dry air mass flow controller;
a process air inlet pipeline;
and the waste gas treatment device is connected with the process air inlet pipeline and is provided with a combustor and a master controller, the combustor is respectively connected with the methane air inlet pipeline and the compressed dry air pipeline, the master controller is respectively connected with a semiconductor process mainframe, the methane mass flow controller and the compressed dry air mass flow controller, and the master controller is used for judging whether the semiconductor process mainframe sends a signal that process gas is the clean gas or not and adjusting the flow of methane and compressed dry air.
In some embodiments of the present application, the exhaust gas treatment device is further provided with a temperature sensor, the temperature sensor is connected with the general controller, and the general controller controls the flow of the methane and the compressed dry air according to the feedback value of the temperature sensor.
In some embodiments of the present application, the process inlet line is further equipped with a pressure sensor.
In some embodiments of the application, exhaust fan is still installed to exhaust gas treatment device, pressure sensor with exhaust fan respectively with master controller links to each other, master controller is according to pressure sensor's feedback value adjusts exhaust fan's the volume of airing exhaust.
In some embodiments of the present application, the exhaust gas treatment device is further provided with a compressed dry air inlet.
A second object of the present application is to provide a method for treating a cleaning gas generated in a semiconductor process, the cleaning gas including nitrogen trifluoride, the method comprising:
responding to a signal that the process gas sent by the semiconductor process mainframe is the clean gas, and enabling the clean gas to enter an exhaust gas treatment device;
adjusting the flow rates of the methane and the compressed dry air, feeding the methane and the compressed dry air into a combustor of the waste gas treatment device in proportion, and combusting the methane and the compressed dry air in the combustor to generate heat;
and reacting nitrogen trifluoride in the cleaning gas in the exhaust gas treatment device under the heat, thereby obtaining a treatment.
In some embodiments of the present application, the method further comprises:
detecting the combustion temperature;
in response to the combustion temperature being below a desired temperature, adjusting the flow of methane and compressed dry air until the combustion temperature is above the desired temperature.
In some embodiments of the present application, the combustion temperature of methane and compressed dry air in the combustor is above 900 ℃, and nitrogen trifluoride in the cleaning gas is decomposed by combustion in the exhaust gas treatment device. In some embodiments of the present application, the method further comprises:
detecting the inlet pressure of the cleaning gas;
responding to the fact that the air inlet pressure exceeds a set value, and adjusting the exhaust volume of an exhaust fan until the air inlet pressure of the cleaning gas is lower than the set value;
wherein the exhaust fan is installed on the exhaust gas treatment device.
It is a third object of the present application to provide an apparatus comprising:
a processor; and
a memory storing computer instructions which, when executed by the processor, cause the processor to perform the above method.
The technical scheme for processing the cleaning gas generated in the semiconductor manufacturing process can accurately judge the time for processing the cleaning gas through the communication with main process equipment, and can control the flow of methane and compressed dry air, thereby adjusting the combustion temperature and effectively processing the nitrogen trifluoride in the cleaning gas.
Additional aspects and advantages of the invention will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the invention.
Drawings
FIG. 1 is a schematic diagram of a system for processing cleaning gases generated during a semiconductor manufacturing process according to one embodiment of the present disclosure.
FIG. 2 is a schematic block diagram of a system for processing cleaning gases generated during a semiconductor manufacturing process according to another embodiment of the present application.
FIG. 3 is a flow chart of a process for treating a cleaning gas generated during a semiconductor manufacturing process according to one embodiment of the present disclosure.
FIG. 4 is a flow chart of a process for treating a cleaning gas generated during a semiconductor manufacturing process according to another embodiment of the present application.
FIG. 5 is a flow chart of a process for treating a cleaning gas generated during a semiconductor manufacturing process according to yet another embodiment of the present application.
FIG. 6 is a flow chart of a process for treating a cleaning gas generated during a semiconductor manufacturing process according to yet another embodiment of the present application.
Detailed Description
The following detailed description of the present invention, taken in conjunction with the accompanying drawings and examples, is provided to enable the invention and its various aspects and advantages to be better understood. However, the specific embodiments and examples described below are for illustrative purposes only and are not limiting of the invention.
In the description of the present application, it should be noted that unless otherwise explicitly stated or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection, either mechanically, electrically, or in communication with each other; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meaning of the above terms in the present application can be understood by those of ordinary skill in the art as appropriate.
The following disclosure provides many different embodiments or examples for implementing different features of the application. In order to simplify the disclosure of the present application, specific example components and arrangements are described below. Of course, they are merely examples and are not intended to limit the present application. Moreover, the present application may repeat reference numerals and/or letters in the various examples, such repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed. In addition, examples of various specific processes and materials are provided herein, but one of ordinary skill in the art may recognize applications of other processes and/or use of other materials.
FIG. 1 illustrates a system 1000 for processing cleaning gases generated during a semiconductor manufacturing process according to one embodiment of the present application. The system 1000 includes a combustion circuit, a process inlet circuit, and an exhaust treatment device 300.
Wherein, the combustion line comprises a methane inlet line and a compressed dry air management. A first hand valve 111, a first electromagnetic valve 112 and a methane mass flow controller 113 are arranged on the methane inlet pipeline. A second hand valve 121, a second electromagnetic valve 122 and a compressed dry air mass flow controller 123 are installed on the compressed dry air pipeline.
The process gas inlet pipeline is provided with a three-way valve 211, so that the discharge of process gas can be realized. When the waste gas treatment device 300 is stopped, the process gas may be exhausted to other equipment through the three-way valve 211.
The exhaust gas treatment device 300 is equipped with a burner 310 and a general controller (not shown in the drawings), and the exhaust gas treatment device 300 is connected to a process intake line. When the process gas is a cleaning gas, the cleaning gas enters the exhaust gas treatment device 300 to be treated.
The burner 310 is connected to a methane inlet line and a compressed dry air line, respectively. The methane and compressed dry air are combusted in the combustor 310 to generate heat for the clean gas to be processed by the exhaust gas treatment device 300.
The general controller is connected to a semiconductor processing mainframe (not shown), a methane mass flow controller 113, a compressed dry air mass flow controller 123, a first solenoid valve 112 and a second solenoid valve 122, respectively. The general controller is used for determining whether the process gas is a clean gas or not from the semiconductor process mainframe, controlling the methane mass flow controller 113 and the compressed dry air mass flow controller 123 to adjust the flow rates of methane and compressed dry air, and controlling the opening and closing of the first solenoid valve 112 and the second solenoid valve 122 to supply methane and compressed dry air to the burner 310 of the exhaust gas treatment device 300.
The system for processing the cleaning gas generated in the semiconductor process can accurately judge the time for processing the cleaning gas and can process methane (CH) through the communication with the main process equipment4) And the flow rate of Compressed Dry Air (CDA) are controlled to adjust the combustion temperature so that nitrogen trifluoride in the cleaning gas can be effectively treated.
The compressed dry air used in the present application has an oxygen content of about 20.95% by volume.
FIG. 2 illustrates a system 1000 for processing cleaning gases generated during a semiconductor manufacturing process, according to another embodiment of the present application. In the system 1000, the exhaust gas treatment device 300 is further provided with a temperature sensor 320 in addition to the embodiment shown in fig. 1. The temperature sensor 320 is connected to the overall controller. The master controller can control the flow of methane and compressed dry air according to the feedback value of the temperature sensor, so that the combustion temperature reaches the required temperature.
Further, in this embodiment, the process inlet line of the system 1000 is also equipped with a pressure sensor 212. The pressure sensor 212 is used to measure the inlet pressure of the process inlet line to prevent the amount of clean gas from being too large and causing the exhaust gas treatment device 300 to be down.
In this embodiment, the exhaust gas treatment device 300 of the system 1000 is further provided with an exhaust fan 330. At this time, the pressure sensor 212 and the exhaust fan 330 are connected to the overall controller, respectively. The master controller can adjust the air exhaust volume of the exhaust fan according to the feedback value of the pressure sensor, so that the air passing performance inside the waste gas treatment device 300 is enhanced, and the waste gas treatment device 300 is prevented from going down.
In the present application, the exhaust gas treatment device is used for treating SiH under normal operation when the process gas is not a clean gas2Cl2、SiH4TEOS, etc. When the process gas is not a cleaning gas, the exhaust fan 330 is not turned on.
In the present application, nitrogen trifluoride in the cleaning gas reacts to be treated. Alternatively, the reaction is a redox reaction, and in this case, a compressed dry air inlet, an oxygen inlet, or the like may be provided in the exhaust gas treatment device 300 so that nitrogen trifluoride in the cleaning gas is decomposed by combustion at a high temperature.
It is of course also possible to react nitrogen trifluoride with steam or to decompose nitrogen trifluoride at elevated temperatures. The present application preferably allows nitrogen trifluoride to undergo redox reactions to be disposed of, at which point the flow of methane and compression drying controls can be adjusted so that the combustion temperature is above 900 ℃.
FIG. 3 illustrates a method for processing a cleaning gas generated in a semiconductor process according to one embodiment of the present application. The method comprises the following steps:
responding to a signal that the process gas sent by the semiconductor process mainframe is clean gas, and enabling the clean gas to enter the waste gas treatment device;
regulating the flow of methane and compressed dry air to feed the methane and the compressed dry air into a burner of the waste gas treatment device in proportion, and combusting the methane and the compressed dry air in the burner to generate heat;
the nitrogen trifluoride in the cleaning gas is reacted in the exhaust gas treatment device under heat to be treated.
The processing method provided by the application can accurately judge the time for processing the cleaning gas through the communication with the main processing equipment, and can control the flow of methane and compressed dry air, so that the combustion temperature is adjusted, and nitrogen trifluoride in the cleaning gas can be effectively processed.
Alternatively, as previously mentioned, the exhaust gas treatment device is used to treat SiH under normal operating conditions when the process gas is not a clean gas2Cl2、SiH4TEOS, etc. At this time, as shown in fig. 4, the method may be:
judging whether the semiconductor processing mainframe sends a signal that the processing gas is clean gas or not;
if so, enabling the clean gas to enter the waste gas treatment device;
regulating the flow of methane and compressed dry air to feed the methane and the compressed dry air into a burner of the waste gas treatment device in proportion, and combusting the methane and the compressed dry air in the burner to generate heat;
reacting nitrogen trifluoride in the cleaning gas in an exhaust gas treatment device under heat to obtain a treatment;
if not, the waste gas treatment device normally operates.
Optionally, the method further includes:
detecting the combustion temperature;
in response to the combustion temperature being below a desired temperature, the flow rates of methane and compressed dry air are adjusted until the combustion temperature is above the desired temperature.
FIG. 5 illustrates a method for processing cleaning gases generated during a semiconductor manufacturing process according to another embodiment of the present application. The method further includes, with respect to the embodiment shown in fig. 4: judging whether the combustion temperature is higher than the required temperature;
if not, adjusting the flow rates of the methane and the compressed dry air until the combustion temperature is higher than the required temperature.
That is, by adjusting the flow of methane and compressed dry air, thereby increasing the temperature of the combustor, heat will be compensated.
If so, the cleaning gas continues to be processed under the current state.
As described above, when nitrogen trifluoride is subjected to oxidation-reduction reaction and thus treated, the combustion temperature is preferably higher than 900 ℃. At 900 ℃, the nitrogen trifluoride reaction can be completed.
Optionally, the method further includes:
detecting the air inlet pressure of the cleaning gas;
responding to the air inlet pressure exceeding a set value, and adjusting the exhaust volume of the exhaust fan until the air inlet pressure of the clean air is lower than the set value;
wherein, exhaust fan installs on exhaust treatment device.
FIG. 6 illustrates a method for processing cleaning gases generated during a semiconductor manufacturing process according to yet another embodiment of the present application. The method further includes, with respect to the embodiment shown in fig. 4:
judging whether the air inlet pressure of the clean air exceeds a set value or not;
if so, adjusting the exhaust volume of the exhaust fan until the air inlet pressure of the clean air is lower than a set value;
wherein the exhaust fan is installed on the exhaust gas treatment device.
Namely, the exhaust volume of the exhaust fan is adjusted, so that the air passing performance inside the exhaust gas treatment device is enhanced, and the breakdown of the exhaust gas treatment device is prevented.
If so, the cleaning gas continues to be processed under the current state.
The present application further provides a device, comprising: a processor; and a memory storing computer instructions that, when executed by the processor, cause the processor to perform the above-described method.
The present application also provides a non-transitory computer storage medium storing a computer program which, when executed by one or more processors, causes the processors to perform the above-described method.
It should be noted that those skilled in the art can easily realize that the present application can be implemented in hardware or a combination of hardware and computer software by using the exemplary units and steps described in connection with the embodiments provided herein. Whether a function is performed as hardware or computer software drives hardware depends upon the particular application and design constraints imposed on the solution. Skilled artisans may implement the described functionality in varying ways for each particular application, but such implementation decisions should not be interpreted as causing a departure from the scope of the present application.
It should be noted that, for simplicity of description, the above-mentioned method embodiments are described as a series of acts or combination of acts, but those skilled in the art will recognize that the present application is not limited by the order of acts described, as some steps may occur in other orders or concurrently depending on the application. Further, those skilled in the art should also appreciate that the embodiments described in the specification are exemplary embodiments and that the acts and modules referred to are not necessarily required in this application.
In the foregoing embodiments, the descriptions of the respective embodiments have respective emphasis, and for parts that are not described in detail in a certain embodiment, reference may be made to related descriptions of other embodiments.
In the embodiments provided in the present application, it should be understood that the disclosed apparatus may be implemented in other manners. The units described as separate parts may or may not be physically separate, and parts displayed as units may or may not be physical units, may be located in one place, or may be distributed on a plurality of network units. Some or all of the units can be selected according to actual needs to achieve the purpose of the solution of the embodiment.
Those skilled in the art will appreciate that all or part of the steps in the methods of the above embodiments may be performed by hardware related to a program, the program may be stored in a computer readable memory, and the memory may include: flash Memory disks, Read-Only memories (ROMs), Random Access Memories (RAMs), or optical disks.
The foregoing detailed description of the embodiments of the present application has been presented to illustrate the principles and implementations of the present application, and the above description of the embodiments is only provided to help understand the method and the core concept of the present application; meanwhile, for a person skilled in the art, according to the idea of the present application, there may be variations in the specific embodiments and the application scope, and in summary, the content of the present specification should not be construed as a limitation to the present application.
Claims (10)
1. A system for treating a cleaning gas generated in a semiconductor manufacturing process, the cleaning gas comprising nitrogen trifluoride, the system comprising:
the combustion pipeline comprises a methane inlet pipeline provided with a methane mass flow controller and a compressed dry air pipeline provided with a compressed dry air mass flow controller;
a process air inlet pipeline;
and the waste gas treatment device is connected with the process air inlet pipeline and is provided with a combustor and a master controller, the combustor is respectively connected with the methane air inlet pipeline and the compressed dry air pipeline, the master controller is respectively connected with a semiconductor process mainframe, the methane mass flow controller and the compressed dry air mass flow controller, and the master controller is used for judging whether the semiconductor process mainframe sends a signal that process gas is the clean gas or not and adjusting the flow of methane and compressed dry air.
2. The system according to claim 1, characterized in that the exhaust gas treatment device is further provided with a temperature sensor, the temperature sensor is connected with the general controller, and the general controller adjusts the flow rates of the methane and the compressed dry air according to the feedback value of the temperature sensor.
3. The system of claim 1, wherein the process inlet line is further equipped with a pressure sensor.
4. The system according to claim 3, wherein the exhaust gas treatment device is further provided with an exhaust fan, the pressure sensor and the exhaust fan are respectively connected with the master controller, and the master controller adjusts the exhaust volume of the exhaust fan according to the feedback value of the pressure sensor.
5. The system of claim 1, wherein the exhaust gas treatment device is further provided with a compressed dry air inlet.
6. A method for treating a cleaning gas generated in a semiconductor process, the cleaning gas comprising nitrogen trifluoride, the method comprising:
responding to a signal that the process gas sent by the semiconductor process mainframe is the clean gas, and enabling the clean gas to enter an exhaust gas treatment device;
adjusting the flow rates of the methane and the compressed dry air, feeding the methane and the compressed dry air into a combustor of the waste gas treatment device in proportion, and combusting the methane and the compressed dry air in the combustor to generate heat;
and reacting nitrogen trifluoride in the cleaning gas in the exhaust gas treatment device under the heat, thereby obtaining a treatment.
7. The method of claim 6, further comprising:
detecting the combustion temperature;
in response to the combustion temperature being below a desired temperature, adjusting the flow of methane and compressed dry air until the combustion temperature is above the desired temperature.
8. The method according to claim 7, wherein the combustion temperature of methane and compressed dry air in the burner is higher than 900 ℃, and nitrogen trifluoride in the cleaning gas is decomposed by combustion in the exhaust gas treatment device.
9. The method of claim 6, further comprising:
detecting the inlet pressure of the cleaning gas;
responding to the fact that the air inlet pressure exceeds a set value, and adjusting the exhaust volume of an exhaust fan until the air inlet pressure of the cleaning gas is lower than the set value;
wherein the exhaust fan is installed on the exhaust gas treatment device.
10. An apparatus, comprising:
a processor; and
a memory storing computer instructions that, when executed by the processor, cause the processor to perform the method of any of claims 6-9.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202110756847.2A CN113446609A (en) | 2021-07-05 | 2021-07-05 | System, method and apparatus for processing cleaning gas generated in semiconductor process |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202110756847.2A CN113446609A (en) | 2021-07-05 | 2021-07-05 | System, method and apparatus for processing cleaning gas generated in semiconductor process |
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| CN110986609A (en) * | 2019-12-26 | 2020-04-10 | 四川蓝海化工（集团）有限公司 | Tail gas pressurization system for lime kiln |
| CN112827341A (en) * | 2020-12-25 | 2021-05-25 | 北京京仪自动化装备技术有限公司 | Waste gas treatment system of semiconductor process and waste gas treatment method thereof |
| CN113048493A (en) * | 2021-03-09 | 2021-06-29 | 北京京仪自动化装备技术有限公司 | Semiconductor waste gas treatment device and treatment method |
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2021
- 2021-07-05 CN CN202110756847.2A patent/CN113446609A/en active Pending
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11218318A (en) * | 1998-02-03 | 1999-08-10 | Air Liquide Japan Ltd | Exhaust gas treating facility |
| CN1582195A (en) * | 2001-07-03 | 2005-02-16 | 松下电器产业株式会社 | Method and apparatus for cleaning exhaust gas and dust collector used for its apparatus |
| CN202361384U (en) * | 2011-12-02 | 2012-08-01 | 杭州华源前线能源设备有限公司 | Pressure stabilization combustion system for gas |
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| CN109099445A (en) * | 2018-10-31 | 2018-12-28 | 江苏师范大学 | A kind of incinerator of industrial waste gas |
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