CN100439992C - Liquid crystal display device and fabrication method thereof - Google Patents

Liquid crystal display device and fabrication method thereof Download PDF

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Publication number
CN100439992C
CN100439992C CNB2006100813479A CN200610081347A CN100439992C CN 100439992 C CN100439992 C CN 100439992C CN B2006100813479 A CNB2006100813479 A CN B2006100813479A CN 200610081347 A CN200610081347 A CN 200610081347A CN 100439992 C CN100439992 C CN 100439992C
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electrode
layer
substrate
liquid crystal
display device
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CN1866092A (en
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河龙旼
黄韩郁
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LG Display Co Ltd
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LG Display Co Ltd
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G02F1/134363—Electrodes characterised by their geometrical arrangement for applying an electric field parallel to the substrate, i.e. in-plane switching [IPS]
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1337—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
    • G02F1/133707—Structures for producing distorted electric fields, e.g. bumps, protrusions, recesses, slits in pixel electrodes

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Liquid Crystal (AREA)

Abstract

An LCD device, and a fabrication method thereof, having a high aperture ratio and a high optical transmittance that enhances a fabrication yield and reduces the number of masks required in a fabrication process are disclosed. The LCD device includes a first substrate and a second substrate; a gate line arranged on the first substrate in one direction and having a transparent conductive layer formed of a transparent conductive material at a lower portion thereof; a data line; a thin film transistor; a first electrode formed on the first substrate and formed on the same layer as the transparent conductive layer; a second electrode having a plurality of slits and formed on a different layer from the first electrode, wherein the second electrode generates a horizontal field with a parabolic shape on the first substrate with the first electrode; and a liquid crystal layer.

Description

Liquid crystal display device and manufacture method thereof
Technical field
The present invention relates to a kind of liquid crystal display (LCD) device and manufacture method thereof, relate in particular to a kind of LCD device and manufacture method thereof that can reduce number of masks and increase having of manufacturing output high aperture ratio and high transmission rate that have.
Background technology
In recent years, because little, the in light weight and power-save operation of size been has has been researched and developed various mobile electronic devices, such as mobile phone, PDA(Personal Digital Assistant) and notebook computer.Thus, researched and developed flat-panel display device, as LCD (LCD), plasma display panel (PDP), Field Emission Display (FED) and vacuum fluorescent display (VFD).In these flat-panel display devices, LCD is because its simple driving designs and the excellent images quality is produced at present in large quantities.
The LCD device is to supplying with data-signal with the pixel of cells arranged in matrix independently and then controlling the display device that transmittance shows desired image according to each pixel according to image information.This LCD device mainly uses active matrix (AM) method to drive.Active matrix method is by via driving liquid crystal such as the switching device that is arranged on the thin film transistor (TFT) (TFT) in each pixel to liquid crystal applied voltages.
The LCD device can be divided into polytype according to the driving method of liquid crystal molecule.In various LCD devices, mainly use the LCD device of twisted-nematic (TN) pattern.
The LCD device of TN pattern makes the director of liquid crystal molecule have 0 °～90 ° angle with respect to substrate by the direction driving liquid crystal molecule of ON/OFF electric field along vertical substrate.
Yet, because the LCD device of TN pattern drives liquid crystal molecule along the direction perpendicular to substrate, so can only obtain narrow visual angle.Therefore, direction being set or the color or the brightness meeting difference of angular image is set according to the LCD device.In order to address the above problem, proposed to be used to realize in-plain switching (IPS) the LCD device at wide visual angle, that is, along continuous straight runs applies the copline electric field and is parallel in the director of liquid crystal molecule under the situation of substrate to substrate and drives liquid crystal molecule along direction of an electric field.
When voltage is applied to the electrode of IPS-LCD device, on substrate, forms horizontal component of electric field, and then arrange liquid crystal molecule along horizontal direction.Therefore, the IPS-LCD device can obtain than the wide relatively visual angle of conventional LCD device.Fig. 1 shows the synoptic diagram of conventional IPS-LCD device unit picture element.
As shown in the figure, the grid line l and the data line 3 that are formed by metal level are arranged on first substrate of LCD device along horizontal direction and vertical direction, thereby limit unit pixel.Realize N * m pixel on the LCD device, wherein N bar grid line l and m bar data line 3 are intersected with each other.But, only show a pixel for illustrative ease.
Place, point of crossing at grid line l and data line 3 forms switching device, as comprises the thin film transistor (TFT) (TFT) of grid 1g, semiconductor layer (not shown) and source/drain 3a and 3b.Grid 1g links to each other with data line 3 with grid line l respectively with 3b with source/drain 3a.By grid 1g actuating switch device, and source/ drain 3a and 3b are sent to pixel by data line 3 with the signal of input by the signal by grid line 1 input.
The concentric line 11 that is used to transmit common signal is parallel to grid line l and is arranged in the unit picture element.At least one pair of is used to change the electrode of liquid crystal molecule, and promptly public electrode 13 and pixel electrode 15 are parallel to data line 3 and are arranged in the unit picture element, and then produces the horizontal component of electric field that is parallel to substrate surface.
Public electrode 13 forms simultaneously with grid line l, and links to each other with concentric line 11.Pixel electrode 15 is formed on the passivation layer (not shown) and by contact hole 7 and links to each other with drain electrode 3b, and described passivation layer is formed on the whole surface of the substrate that comprises source/ drain 3a and 3b.
Be stacked on the concentric line 11 under the situation of the storage electrode 11 that extends from drain electrode 3b ' be inserted with therein gate insulation layer (end illustrates), and then form storage capacitors.
Be used to prevent that light from leaking into the black matrix of thin film transistor (TFT), gate line 1 and data line 3, and be used for colorific color filter and be formed on the second substrate (not shown).The overlay that is used for smooth color filter layer is formed on color filter layer.
Be used for determining that the oriented layer (not shown) of liquid crystal initial arrangement direction is formed on each apparent surface of first substrate and second substrate, and between first substrate and second substrate, form liquid crystal layer.
In the IPS-LCD device, public electrode 13 and pixel electrode 15 are arranged on the same substrate to produce horizontal component of electric field.Equally, horizontal component of electric field drives the liquid crystal molecule of liquid crystal layer along the direction that is parallel to substrate.Therefore, can be along upper and lower to showing the image of LCD device with left and right direction.That is to say, can obtain 1 must along upper and lower to the wide visual angle of left and right direction.
Yet in conventional IPS-LCD device, the public electrode 13 of opaque metal layer and pixel electrode 15 are arranged in the pixel region with display image.Therefore, reduced the aperture ratio of LCD device, and reduced transmittance.In addition, need have more high-intensity brightness with acquisition LCD device backlight, and then increase energy consumption.
In order to address the above problem, proposed to form a pair of method with electrode of transparent conductive material.Even this method has increased the aperture ratio slightly, but because it is following former thereby do not significantly improve transmittance.Place and have the broad width is not subjected to horizontal component of electric field with the liquid crystal molecule of the electrode upper area that produces certain strength level electric field influence.Therefore, liquid crystal molecule is kept the initial arrangement state, thereby does not improve transmittance.Even public electrode and pixel electrode are all formed by transparent conductive material, but the electrically conducting transparent rate is only influential and to the not influence of the zone line of electrode to the increase of electrode edge place white brightness.
Summary of the invention
Therefore, an object of the present invention is by make light evenly by LCD device electrode surface obtain high aperture than and high transmission rate a kind of IPS-LCD device and manufacture method thereof be provided.
A kind of method that can reduce number of masks and increase the IPS-LCD that makes having of output high aperture ratio and high transmission rate that is used to make that provides is provided another object of the present invention.
In order to obtain these and other advantages according to the object of the invention, as embodying at this and broadly described, a kind of liquid crystal display (LCD) device with high aperture ratio and high transmission rate is provided, comprises: with certain cell gap first substrate respect to one another and second substrate; Be arranged on first substrate and have the metal level grid line of transparency conducting layer in its underpart along a direction; Being formed on first substrate intersects with grid line forms the data line of unit picture element; Be formed on grid line and data line infall and comprise the thin film transistor (TFT) of the grid of telling from grid line; Be formed on first substrate and with transparency conducting layer and be formed on second electrode on one deck, it is used for producing parabolic horizontal component of electric field with first electrode on first substrate; And be formed on the liquid crystal layer in the space between first substrate and second substrate.
Form enough narrowly about second electrode gap between the second electrode slit, on first substrate, to form parabolic horizontal component of electric field with first electrode.And first electrode and second distance between electrodes form narrowlyer than box gap.
First electrode forms plate shape or forms has a plurality of slits.
Described thin film transistor (TFT) comprises the active layer with source region and drain region; Be formed on the gate insulation layer on the active layer; Be formed on the middle layer on the grid; Expose first contact hole and second contact hole in source region and drain region respectively; And to be formed on source electrode and the drain electrode on the middle layer at a distance of certain interval.At this, active layer is formed by polysilicon.
LCD device of the present invention further comprises the passivation layer that is formed on first substrate that comprises source electrode and drain electrode.Be inserted in this first electrode stacked on top of each other and second electrode under the situation of first electrode and second electrode at passivation layer, and then form memory capacitance.
Electrode is the public electrode that is used to receive common signal, and second electrode is to use from the pixel electrode that receives data-signal.LCD device of the present invention also comprises by the formed concentric line of the metal level identical with grid line, is used to first electrode to apply common signal; And the 3rd contact hole that the drain electrode and second electrode are electrically connected.
First electrode can be the pixel electrode that receives data-signal from thin film transistor (TFT), and second electrode is the public electrode that is used to receive common signal.
First electrode produces horizontal component of electric field with second electrode along the direction that becomes 0 °～45 ° of pitch angle with data line.
LCD device of the present invention further comprises the oriented layer that is used for determining liquid crystal initial arrangement direction on first substrate and second substrate.The grinding direction of this oriented layer is perpendicular to data line.
This transparency conducting layer is made of selected at least a material from the group that comprises tin indium oxide (ITO), indium zinc oxide (IZO) and tin indium oxide zinc (ITZO).Metal level is made of the material of kind at least selected from the group that comprises molybdenum, molybdenum alloy, aluminium, aluminium alloy, titanium, titanium alloy, tantalum, tantalum alloy, cobalt, cobalt-base alloy, nickel and nickel alloy.
In order to obtain these and other advantages and according to purpose of the present invention, as concrete and broadly described, also provide the method for a kind of manufacturing liquid crystal display (LCD) device in this institute, this method comprises: preparation is by glass or quartzy first transparency carrier that forms; On first substrate, form polysilicon layer; By first mask process this polysilicon layer of composition partly, and form active layer thus; Form gate insulation layer comprising on first substrate of active layer; Order forms first transparency conducting layer and the first metal layer on gate insulation layer; By second mask process while composition first transparency conducting layer and the first metal layer, and form grid line, grid and first electrode thus; On active layer, form source region and drain region; On first substrate that comprises grid line, grid and first electrode, form the middle layer; Place on the active layer gate insulation layer and middle layer in the zone separately by the 3rd mask etching, and then form first contact hole and second contact hole, and the first metal layer on etching first electrode and middle layer and then expose first electrode; On the middle layer, form second metal level; By the 4th mask composition second metal level and then formation data line, source electrode and drain electrode; On first substrate that comprises data line, source electrode, drain electrode and first electrode, form passivation layer; Utilize partly etch passivation layer of the 5th mask; On passivation layer, form second transparency conducting layer; And by the 6th mask composition second transparency conducting layer and then form second electrode.
The step that forms polysilicon layer is included in deposited amorphous silicon layer on the transparency carrier; And by laser beam this amorphous silicon layer of annealing.
In the step that forms grid line, grid and first electrode, part first transparency conducting layer is arranged in the bottom separately of grid line and grid, and the first metal layer of part is positioned at the top of first electrode.
In the step that forms source region and drain region, by grid is infused in foreign ion in the active layer as the ion injecting mask, and on source region and drain region illuminating laser beam to activate this source region and drain region.
Forming first contact hole and second contact hole and then exposing in the step of first electrode, carry out the wet etching that utilizes hydrofluorite (HF).
In the step of partially-etched passivation layer, be formed for the 3rd contact hole that the drain electrode and second electrode are electrically connected.At this, first electrode is the public electrode that is used to receive common signal, and second electrode is to use the pixel electrode that receives data-signal from drain electrode.
In the step of partially-etched passivation layer, open described grid pad.At this, first electrode is and the pixel electrode that drains and link to each other and receive data-signal, and second electrode is the public electrode that is used to receive common signal.
This method that is used to make liquid crystal display (LCD) device further is included on the whole surface of first substrate and forms first oriented layer; Prepare second substrate relative with first transparency carrier; On second substrate, form color filter; On color filter, form second oriented layer; Grind first oriented layer and second oriented layer; First substrate bonded to each other and second substrate so that first oriented layer and second oriented layer toward each other; And between first substrate and second substrate, insert liquid crystal layer.
First transparency conducting layer and second transparency conducting layer are made of selected at least a material from the group that comprises tin indium oxide (ITO), indium zinc oxide (IZO) or tin indium oxide zinc (ITZO).The first metal layer and second metal level are made of at least a material selected from the group that comprises molybdenum, molybdenum alloy, aluminium, aluminium alloy, titanium, titanium alloy, tantalum, tantalum alloy, cobalt, cobalt-base alloy, nickel or nickel alloy.
In the present invention, on different layers, be formed for producing first electrode and second electrode of the transparency conducting layer of electric field respectively.Equally, first electrode and second distance between electrodes are formed less than the box gap, to produce the horizontal component of electric field of a plurality of parabolic shapes on substrate.Gap between the second electrode slit is formed enough narrowly by the parabolic shape horizontal component of electric field operation liquid crystal molecule that produces in its both sides, and then drives all liquid crystal molecules on the merit electrode.Therefore, in IPS-LCD device of the present invention,, more increased transmittance and aperture ratio than conventional IPS-LCD device.
In addition, in the present invention, first transparency conducting layer that is used to form first electrode sequentially is deposited on the substrate with the opaque grid metal level that is used to form grid line and grid, and composition is described two-layer simultaneously to utilize a mask, and then forms grid line, grid and first electrode.Therefore, reduce the quantity of mask, and improved manufacturing output.
In conjunction with the accompanying drawings according to following detailed description the in detail of the present invention, make aforementioned and other purposes, feature, aspect and advantage of the present invention become clearer.
Description of drawings
Comprise to provide the present invention is further understood and is incorporated in the instructions and constitutes its a part of accompanying drawing, show embodiments of the present invention and be used from and explain principle of the present invention with instructions one.
In the accompanying drawings:
Fig. 1 shows the planimetric map of the unit picture element of conventional IPS-LCD device;
Fig. 2 A shows the planimetric map according to the unit picture element of the IPS-LCD device of first embodiment of the invention;
Fig. 2 B shows the sectional view of the I-I ' line drawing in Fig. 2 A;
Fig. 3 A shows the planimetric map according to the unit picture element of the IPS-LCD device of second embodiment of the invention;
Fig. 3 B shows the sectional view of the II-II ' line drawing in Fig. 3 A;
Fig. 4 A shows the planimetric map according to the unit picture element of the IPS-LCD device of third embodiment of the invention;
Fig. 4 B shows the sectional view of the III-III ' line drawing in Fig. 4 A; With
Fig. 5 A to 5I shows the process synoptic diagram of the manufacturing IPS-LCD device of the I-I ' line drawing in Fig. 2 A.
Embodiment
Now in detail with reference to preferred implementation of the present invention, the embodiment shown in shown in the drawings.
Below be explained with reference to the drawings the LCD (LCD) that has high aperture ratio and high transmission rate according to of the present invention.
Fig. 2 A shows the planimetric map according to the unit picture element of the IPS-LCD device of first embodiment of the invention, and Fig. 2 B is the sectional view of the I-I ' line drawing in Fig. 2 A.
As shown in the figure, with matrix form many grid lines 101 and data line 103 are set on first substrate 100.A pair of adjacent gate lines 101 and a pair of adjacent 103 intersected with each other and then limit each unit picture element.Gate line is formed by metal level, and transparency conducting layer 113 ' is formed on the bottom of gate line 101.
Switching device forms thin film transistor (TFT) such as the place, point of crossing at gate line 101 and data line 103, as low temperature polycrystal film transistor.Thin film transistor (TFT) comprises the active layer 105 of the polysilicon type with source region 105a and drain region 105b; Be formed on the gate insulation layer 140 on the active layer 105; The grid 101g that is formed on the gate insulation layer 140 and tells from grid line 101; Be formed on the middle layer 142 on the grid 101g; Be formed on and also expose the source region 105a of active layer 105 and the first contact hole 107a and the second contact hole 107b of drain region 105b on the middle layer 142 respectively; And with a determining deviation on middle layer 142, form source electrode 103a and the drain electrode 103b.Source electrode protrudes from data line 103, and links to each other with source region 105a by the first contact hole 107a.The side of drain electrode 103b links to each other with drain region 105b by the second contact hole 107b, and links to each other with second electrode 115 by the 3rd contact hole 107c that is formed on the passivation layer 146, and then applies data-signal for unit picture element.
Polysilicon type thin film transistor (TFT) has the field-effect mobility greater than conventional amorphous silicon type thin film transistor (TFT), and then realizes the high precision (minuteness) and the high aperture ratio of LCD device.In addition, when using the thin film transistor (TFT) of sub zero treatment type, use cheap glass substrate so that the big LCD device with high precision and low price to be provided.
In unit picture element according to first embodiment of the invention, be used for inserting under the state of passivation layer 146 stacked therein from second electrode that the concentric line 111 of the metal level that places the unit picture element center section receives plate shape first electrode 113 of common signals and has a plurality of slit S.Therefore, on first substrate 100, produce the electric field that is used to drive liquid crystal.
First electrode 113 and second electrode 115 are made of selected at least a material from the group that comprises tin indium oxide (ITO), indium zinc oxide (IZO) or tin indium oxide zinc (ITZO).With first electrode 113 with place first transparency conducting layer 113 ' of grid line 101 bottoms as carrying out composition with one deck.Distance between first electrode 113 and second electrode 115 forms less than the box gap of liquid crystal board, and making the electric field that produces between the electrode 113 and second electrode 115 of winning can be parabolic horizontal component of electric field F.Gap between second electrode, the 115 slit S (promptly, the width L of second electrode) must be the gap that is enough on second electrode 115, form equipotential line, can be when between first electrode 113 and second electrode 115, applying voltage by the liquid crystal molecule on described equipotential line complete operation second electrode 115.Therefore, wish that the gap between the slit S of second electrode is narrow.Yet, because the electric field that applies between first electrode and second electrode must have the intensity that is enough to drive liquid crystal, so the gap between the slit of second electrode must be the gap greater than to a certain degree.Therefore, must consider that above-mentioned aspect determines the width of second electrode.Twist the major axis that is equipped with liquid crystal molecule on second electrode 115 by the parabolic shape horizontal component of electric field F that produces between first electrode and second electrode.Therefore, the user can watch the major axis of liquid crystal molecule on all directions, and has improved the visual angle of LCD device thus.In addition, in LCD device of the present invention, evenly come display image by the upper surface of first electrode 113 and second electrode 115 by making light.Therefore, the IPS-LCD device than routine has improved aperture ratio and transmittance significantly.
In LCD device of the present invention, increased more overlapping region between first electrode 113 and second electrode 115 than the IPS-LCD device of routine.Therefore, increased memory capacitance (Cst) and and then reduced and received the pressure drop (Δ Vp) of the electrode of data-signal, thereby realized high aperture than and high transmission rate, increased electric field and improved the display quality on the screen.
The slit S that forms second electrode 115 becomes about 45 ° pitch angle to have with the bearing of trend of data line 103, so as between first electrode 113 and second electrode 115 along generating electric field with the direction at 103 one-tenth about 45 ° of pitch angle of data line.When the horizontal component of electric field that is used to drive liquid crystal had the pitch angle, the grinding direction of oriented layer was consistent with the pitch angle and perpendicular to data line 103.That is to say that the direction of an electric field that produces between the grinding direction that is used for the liquid crystal molecule initial orientation and the data line 103 and second electrode 115 is identical.Therefore, even at not when the LCD device applies voltage (white-black pattern), can not be distorted because of the voltage that produces between the data line 103 and second electrode 115 near the liquid crystal molecule of data line 103.Width be can minimize on second substrate thus, and then the brightness and the aperture ratio of LCD device increased corresponding to the black matrix of data line 103 near zones.
In the present invention, can first electrode and second electrode be set with being mutually symmetrical about concentric line 111.That is, the concentric line 111 of metal level is arranged on the centre of unit picture element, and can first electrode 113 and second electrode 115 be set with being mutually symmetrical up and down about concentric line 111, and then prevents gamut and obtain wide visual angle.
Although not shown, be used to produce the color filter layer of redness, green, blueness etc. to be formed on second substrate in the face of first substrate 100 with being separated by first distance.Liquid crystal layer is formed between first substrate and second substrate.
In the unit picture element according to second embodiment of the invention, first electrode 213 of plate shape is for to be used to receive the pixel electrode of data-signal, and second electrode 215 with a plurality of slit S is for being used to receive the public electrode of common signal.LCD device according to second embodiment has the structure similar to first embodiment, therefore will explain the difference between the two.
Fig. 3 A shows the planimetric map according to the unit picture element of the IPS-LCD device of second embodiment of the invention, and Fig. 3 B is the sectional view of the II-II ' line drawing in Fig. 3 A.
As shown in the figure, with matrix form many grid lines 201 and data line 203 are set on first substrate 200.Grid line 201 and data line 203 intersect each other fork to limit unit picture element.Grid line 201 is formed by the grid metal level, and first transparency conducting layer 213 ' is formed on the bottom of grid line 201.
Switching device, the thin film transistor (TFT) that forms as the place, point of crossing at grid line 201 and data line 203 for example is a low temperature polycrystal film transistor.This thin film transistor (TFT) comprises the active layer 205 of the polysilicon type with source region 205a and drain region 205b; Be formed on the gate insulation layer 240 on the active layer 205; The grid 201g that is formed on the gate insulation layer 240 and tells from grid line 201; Be formed on the middle layer 242 on the grid 201g; Be formed on and also expose the source region 205a of active layer 205 and the first contact hole 207a and the second contact hole 207b of drain region 205b on the middle layer 242 respectively; And be formed on source electrode 203a and drain electrode 203b on the middle layer 242 with certain interval distance.Source electrode 203a protrudes from data line 203, and links to each other with source region 205a by the first contact hole 207a.Drain electrode 203b links to each other with drain region 205b by the second contact hole 207b.
In unit picture element according to second embodiment of the invention, be connected to plate shape first electrode 213 of the drain electrode 302b that is used to receive data-signal and have under a plurality of slit S insert passivation layer 246 betwixt with second electrode 215 that receives common signal from grid pad (not shown) the situation stacked on top of each other.Therefore, on first substrate 200, produce the electric field that is used to drive liquid crystal.
First electrode 213 and second electrode 215 are made of selected at least a material from the group that comprises tin indium oxide (ITO), indium zinc oxide (IZO) and tin indium oxide zinc (ITZO).
The concentric line 211 that is used for transmitting to second electrode 215 common signals is formed on passivation layer 246, and is formed by the transparency conducting layer identical with second electrode 215, and then has increased the brightness of LCD device.
Form distance between first electrode 213 and second electrode 215 with box gap, so that between first electrode 213 and second electrode 215, produce parabolic horizontal component of electric field F less than liquid crystal board.Gap between second electrode, the 215 slit S (that is the width L of second electrode) is formed to such an extent that have a gap that is enough to drive fully liquid crystal molecule on second electrode 215 by the parabolic horizontal component of electric field F between first electrode and second electrode.Therefore, preferably, form the gap between the slit S of second electrode narrow.Yet, because the electric field that applies between first electrode and second electrode must have the intensity that is enough to drive liquid crystal, so the gap between the slit of second electrode must be the gap greater than to a certain degree.Therefore, must consider that above-mentioned aspect determines the width of this second electrode.
The slit S that forms this second electrode 215 becomes about 45 ° pitch angle to have with the bearing of trend of data line 203, so as between first electrode 213 and second electrode 215 along producing electric field with the direction at 203 one-tenth about 45 ° of pitch angle of data line.When the horizontal component of electric field that is used to drive liquid crystal had the pitch angle, the grinding direction of oriented layer was consistent with the pitch angle and perpendicular to data line 203.That is to say that the direction of an electric field that produces between the grinding direction that is used for the liquid crystal molecule initial arrangement and the data line 203 and second electrode 215 is identical.Therefore, though at the end when the LCD device applies voltage (white-black pattern), can not be distorted near the liquid crystal molecule of data line 203 because of the voltage that produces between the data line 203 and second electrode 215.Width be can minimize on second substrate thus, and then the brightness and the aperture ratio of LCD device increased corresponding to the black matrix of data line 203 near zones.
In the present invention, can first electrode 213 and second electrode 215 be set with being mutually symmetrical according to the concentric line in the unit picture element 111.That is to say that the concentric line 211 of metal level is arranged on the centre of unit picture element, about concentric line 111 first electrode 213 and second electrode 215 are set symmetrically self, and then prevent gamut and obtain wide visual angle.
In the unit picture element according to third embodiment of the invention, first electrode 313 and second electrode 315 comprise a plurality of slit S respectively.The slit S of the slit S of first electrode 313 and second electrode 315 forms in the mode that replaces parallel to each other, and then produces parabolic horizontal component of electric field on first substrate 300.LCD device according to the 3rd embodiment has the structure similar to first embodiment, therefore will explain the difference between the two.
Fig. 4 A shows the planimetric map according to the unit picture element of the IPS-LCD device of third embodiment of the invention, and Fig. 4 B is depicted as along the sectional view of the III-III ' line drawing among Fig. 4 A.As shown in the figure, have under first electrode 313 of a plurality of slit S and the situation that second electrode 315 inserts passivation layer 346 betwixt stacked on top of each otherly respectively, and then on first substrate 300, produce the electric field that drives liquid crystal.Distance between first electrode 313 and second electrode 315 is formed less than the box gap between the liquid crystal board, so that can produce parabolic horizontal component of electric field F between first electrode 313 and second electrode 315.Gap between the slit S of second electrode 315 (that is the width L of second electrode) must be the gap that can be enough to drive fully the liquid crystal molecule on first substrate 300 when applying voltage between first electrode 313 and second electrode 315.Therefore, preferably form the gap between second electrode, the 315 slit S narrow.Yet, because the electric field that applies between first electrode and second electrode must have the intensity that is enough to drive liquid crystal, so the gap between the second electrode slit must be the gap greater than to a certain degree.
Therefore, in the present invention,, can increase visual angle, aperture ratio and transmittance significantly than the IPS-LCD device of routine.
Explain the manufacture method that has the LCD device of high aperture ratio and high transmission rate according to of the present invention hereinafter with reference to accompanying drawing.
Fig. 5 A to 5I is depicted as the process synoptic diagram of the manufacturing IPS-LCD device of the I-I ' line drawing in Fig. 2 A.
Shown in Fig. 5 A, first transparency carrier 100 that preparation is formed by glass or quartz, and on first substrate 100, form polysilicon layer 105 ' subsequently.
In order to form polysilicon layer 105 ', utilize the certain thickness amorphous silicon layer of deposition on first substrate 100 such as plasma-reinforced chemical vapor deposition (PECVD).Subsequently, this amorphous silicon layer is carried out dehydrogenation and handle and make its crystallization.
The hydrogen that is used to remove amorphous silicon inside is handled in dehydrogenation.Handle according to described dehydrogenation, amorphous silicon layer is put into heating furnace, with nearly 400 ℃ temperature it is heated then.The hydrogen ion that comprises a large amount of interruption crystallization process in the amorphous silicon layer, this is owing to the combination of the instability between the molecule when forming amorphous silicon layer causes.When molecule was bonded to each other according to unsettled amorphous state, hydrogen combined group with the residue of molecule and carries out combination.When making recrystallized amorphous silicon, hydrogen is a kind of defective, and then damages the silicon layer in the crystallization process.Therefore, before crystallization process, must remove hydrogen.
Utilize amorphous silicon layer wherein to be placed in the high-temperature heater and subsequently to the heating means of its heating, or utilize wherein amorphous silicon layer by the instantaneous heating of excimer laser energy and the laser crystal method of crystallization is carried out crystallization process.Owing in crystallization process, can increase crystallite dimension, so laser crystal method can produce the field-effect mobility greater than heating means.Therefore, in needing the thin film transistor (TFT) formation step of high speed operation, preferably use laser crystal method.
Although not shown, forming polysilicon layer 105 ' before, can on first substrate 100, form the cushion that forms by SiOx or SiNx.At this, the impurity that cushion prevents first substrate, 100 inside when carrying out that amorphous silicon layer become the thermal treatment of polysilicon increases with the temperature of first substrate 100 and is introduced in the polysilicon layer 105 '.
After the formation of finishing polysilicon layer 105 ', go up formation photoresist 160 at polysilicon layer 105 '.Although not shown, cure the photoresist 160 that is deposited with certain temperature.Subsequently, will be on photoresist 160 by placing first mask 170 on the photoresist 160 such as ultraviolet rayed, and on photoresist 160, apply developer subsequently.Therefore, shown in Fig. 5 B, go up the photoresist pattern 160a that forms certain area at polysilicon layer 105 '.At this, photoresist is a negative photoresist, and developer removes the zone that ultraviolet ray does not have irradiation.
Subsequently, under the situation that polysilicon layer 105 ' is partly stopped by photoresist pattern 160a, on polysilicon layer 105 ', apply etchant.Therefore, shown in Fig. 5 C, on first substrate 100, form active layer 105.
Then, shown in Fig. 5 D, on the whole surface of first substrate 100, form gate insulation layer 140, and sequential aggradation first transparency conducting layer 113 ' and the first metal layer 101 ' on gate insulation layer 140 subsequently.First transparency conducting layer 113 ' is formed by being selected from least a material of selecting in the group that comprises tin indium oxide (ITO), indium zinc oxide (IZO) or tin indium oxide zinc (ITZO).The first metal layer 101 ' is made of at least a material selected from the group that comprises molybdenum, molybdenum alloy, aluminium, aluminium alloy, titanium, titanium alloy, tantalum, tantalum alloy, cobalt, cobalt-base alloy, nickel or nickel alloy.
Then, go up the deposition photoresist at first transparency conducting layer 113 ' and the first metal layer 101 ', and on photoresist, place second mask subsequently.Then, ultraviolet ray is radiated on the photoresist and applies developer thereon, and then go up at the first metal layer 101 ' and to form photoresist pattern 160b by second mask.Under the situation that first transparency conducting layer 113 ' and the first metal layer 101 ' are partly stopped by photoresist pattern 160b, apply etchant thereon so that first transparency conducting layer 113 ' and the first metal layer 101 ' of etching simultaneously.Therefore, shown in Fig. 5 E, form grid line (not shown), grid 101g and plate shaped electrode 113.First electrode 113 comprises the first metal layer 101 ' of part at an upper portion thereof because grid line (not shown), grid 101g that the while composition is formed by metal level 101 ' and first electrode 113 that is formed by first transparency conducting layer 113 ', grid line and grid 101g comprise first transparency conducting layer 113 ' of part respectively in its underpart.That is to say, form grid line, grid 101g and first electrode 113 of transparency conducting layer by the single mask operation simultaneously.
Shown in Fig. 5 F, by first grid 101g is used as the ion injecting mask foreign ion is injected in the active layer 105, and then in active layer 105, forms source region 105a and drain region 105b respectively.Subsequently, make laser beam irradiation on source region 105a and drain region 105b, and then activate source region 105a and drain region 105b.Form source region 105a and drain region 105b increasing itself and the Ohmic contact of the electrode thereon that links to each other respectively, and form by three races's foreign ion metalized portion active layer 105 of use such as boron.It is simpler than the method that is used to make N type thin film transistor (TFT) to use method that the reason of three races's foreign ion is polysilicon is made the LCD device as active layer, and the still less of inferior quality LCD device of generation.Therefore, in the situation of making N type thin film transistor (TFT), be injected in the active layer to form source region and drain region such as the 5th family's foreign ion of P.
When foreign ion being injected into the formation of finishing source region 105a and drain region 105b in the active layer, forming middle layer 142 thereon and form photoresist pattern 160c by the 3rd mask process.Subsequently, shown in Fig. 5 G, be formed for part and expose the first contact hole 107a and second of source region 160a and drain region 160b by touching hole 107b.Simultaneously, the first metal layer on etching first electrode 113 101 ' and middle layer 142 are to expose first electrode 113.That is to say, form the first contact hole 107a and the second contact hole 107b by in the 3rd mask process, using single mask process, and form first electrode 113 to be used as transmission region.At this, the acid solution such as hydrofluorite (HF) can be used as etching solution.
Subsequently, shown in Fig. 5 H, be deposited on the middle layer 142 that is formed with the first contact hole 107a and the second contact hole 107b by second metal level that at least a material constituted selected from the group that comprises molybdenum, molybdenum alloy, aluminium, aluminium alloy, titanium, titanium alloy, tantalum, tantalum alloy, cobalt, cobalt-base alloy, nickel or nickel alloy.Subsequently, by the 4th mask process composition second metal level, and then form data line 103, the source electrode 103a that protrudes from data line 103 and separate the drain electrode 103b of certain interval with source electrode 103a.Then, chemical vapor deposition (CVD) method is implemented on the whole surface of first substrate 100 that is formed with source electrode 103a, drain electrode 103b and data line 103, thus deposit passivation layer in the above.
Subsequently, utilize the 5th mask partly etching be formed at the passivation layer 146 of drain electrode on the 103b, and then be formed for the 3rd contact hole 107c that the drain electrode 103b and second electrode 115 are electrically connected to each other.Subsequently, second transparency conducting layer that deposition is formed by tin indium oxide (ITO), indium zinc oxide (IZO) or tin indium oxide zinc (ITZO) on passivation layer 146.At this, by preface on the 6th mask second conductive layer is patterned into second electrode 115 with a plurality of slits, and a side of second electrode links to each other with drain electrode 1O3b by the 3rd contact hole 107c.
Although not shown, first oriented layer that is used for definite liquid crystal inceptive direction is deposited on first substrate 100 and to it and grinds.Color filter is formed on second substrate of making separately with respect to first substrate, and is deposited on second oriented layer on the color filter and then is ground.First substrate 100 bonded to each other and second substrate 200 make and win oriented layer and second oriented layer toward each other.Equally, form liquid crystal layer in the space between first substrate 100 and second substrate 200, and then finish LCD device with high aperture ratio and high transmission rate.
LCD device according to the present invention has the structure that is different from conventional LCD device.Shown in Fig. 5 I, all form in the bottom of grid 101a and grid line and to have certain thickness transparency conducting layer 113 ', this is because sequential aggradation is used for the first metal layer 101 ' of first electrode and first transparency conducting layer 113 ' and by utilizing a mask that its composition is formed.
In the IPS-LCD of routine device, on identical metal level, be formed for receiving first electrode and the grid of common signal by identical mask process, or first electrode be formed on the transparency conducting layer identical with second electrode by identical mask process.Yet in the present invention, first electrode that is formed by transparency conducting layer must be formed on different layer places with second electrode respectively, has the LCD device of high aperture ratio and high transmission rate with manufacturing.Therefore, on the mask that forms grid, the preface, also need to be used for forming respectively two other mask process of first electrode and second electrode.According to the method that is used for making the LCD device of the present invention, sequential aggradation is used to form the transparency conducting layer of first electrode and is used to form the metal level of grid, and utilizes a mask composition grid and first electrode simultaneously.Therefore, reduced the quantity of mask.In addition, even when the thin film transistor (TFT) with the low temperature polycrystalline silicon type is used as switching device, takes turns mask process by six and also can make the LCD device.
In the present invention, do not need to form the additional masks operation of first electrode, and then simplified whole manufacturing process and reduced manufacturing cost.
In first embodiment of the present invention, first electrode is the public electrode that is used to receive common signal, and second electrode is the pixel electrode that is used to receive data-signal.Yet shown in second embodiment of the invention, first electrode can be a pixel electrode, and second electrode can be a public electrode.In the step of partially-etched passivation layer, the certain zone in the drain electrode is not opened, and certain zone of having opened the grid pads at the virtual area place of LCD device, so that form the 3rd contact hole.
As mentioned above, in the present invention, light transmission is equably crossed electrode and then has been increased transmittance and the aperture ratio, has improved display quality thus.
Equally, in the present invention, reduce the quantity of mask, and then simplified manufacturing process, increased the manufacturing output of LCD device thus.
Although not shown, the present invention includes the LCD device of various patterns and be used for the various structures and the setting of pixel.
Under the situation that does not break away from spirit of the present invention or inner characteristic, can implement the present invention with several forms, but be to be understood that unless stated otherwise, the foregoing description is not limited by any details of above stated specification, and should in the spirit and scope that appended claims limits, understand widely, and then fall within institute in the scope of claim and the boundary and change and revise, or described scope and boundary equivalent all tend to be included in the appended claims.

Claims (34)

1. liquid crystal display device comprises:
With certain cell gap first substrate respect to one another and second substrate;
Be arranged on the grid line of the metal level on first substrate along a direction, and have the transparency conducting layer that forms by transparent conductive material at this place, grid line bottom;
Thereby be formed on first substrate to intersect the data line that forms unit picture element with grid line;
Be formed on place, point of crossing between grid line and the data line and comprise the thin film transistor (TFT) of the grid of telling from grid line;
Be formed on first substrate and and be formed on first electrode on one deck with transparency conducting layer;
Have a plurality of slits and be formed on second electrode that is used on first substrate, producing the parabolic shape horizontal component of electric field on the layer different with first electrode with first electrode;
Be inserted into the liquid crystal layer between first substrate and second substrate, gap between the wherein said second electrode slit is formed enough narrowly with respect to second electrode, to form parabolic horizontal component of electric field with first electrode on first substrate, described first electrode and second distance between electrodes are formed narrowlyer than box gap.
2. liquid crystal display device according to claim 1 is characterized in that, described first electrode forms has plate shape.
3. liquid crystal display device according to claim 1 is characterized in that, described first electrode forms has a plurality of slits.
4. liquid crystal display device according to claim 3 is characterized in that, alternately forms the slit of first electrode and the slit of second electrode on first substrate, and then produces parabolic horizontal component of electric field.
5. liquid crystal display device according to claim 1 is characterized in that, described thin film transistor (TFT) comprises:
Active layer with source region and drain region;
Be formed on the gate insulation layer on the active layer;
Be formed on the middle layer on the grid;
Expose first contact hole and second contact hole in source region and drain region respectively; And
Be formed on source electrode and drain electrode on the middle layer with certain interval.
6. liquid crystal display device according to claim 5 is characterized in that described active layer is formed by polysilicon.
7. liquid crystal display device according to claim 6 is characterized in that, further comprises being formed on the whole lip-deep passivation layer of first substrate that comprises source electrode and drain electrode.
8. liquid crystal display device according to claim 7 is characterized in that, first electrode and second electrode are stacked on top of each other and insert passivation layer between the two, thereby form storage capacitors in the overlapping region.
9. liquid crystal display device according to claim 8 is characterized in that, first electrode is the public electrode that is used to receive common signal, and second electrode is the pixel electrode that is used for receiving from thin film transistor (TFT) data-signal.
10. liquid crystal display device according to claim 9 is characterized in that, further comprises by the formed concentric line of the metal level identical with grid line, to apply common signal to described first electrode.
11. liquid crystal display device according to claim 10 is characterized in that, further comprises the 3rd contact hole that is used to make drain electrode and the electrical connection of second electrode.
12. liquid crystal display device according to claim 8 is characterized in that, described first electrode is the pixel electrode that is used for receiving from thin film transistor (TFT) data-signal, and second electrode is the public electrode that is used to receive common signal.
13. liquid crystal display device according to claim 1 is characterized in that, described first electrode produces horizontal component of electric field with second electrode along the direction that becomes 0 °～45 ° of pitch angle with data line.
14. liquid crystal display device according to claim 13 is characterized in that, further is included in the oriented layer that is used for determining the liquid crystal inceptive direction on first substrate and second substrate.
15. liquid crystal display device according to claim 14 is characterized in that, the grinding direction of described oriented layer is perpendicular to data line.
16. liquid crystal display device according to claim 1 is characterized in that, described first electrode is formed by transparent conductive material.
17., it is characterized in that described transparent conductive material is a kind of material that is selected from tin indium oxide, indium zinc oxide and the tin indium oxide zinc according to claim 1 and 16 one of them described liquid crystal display device.
18. liquid crystal display device according to claim 1, it is characterized in that described metal level is made of at least a material that is selected from the group that comprises molybdenum, molybdenum alloy, aluminium, aluminium alloy, titanium, titanium alloy, tantalum, tantalum alloy, cobalt, cobalt-base alloy, nickel and nickel alloy.
19. liquid crystal display device according to claim 1 is characterized in that, described second substrate comprises color filter layer.
20. a method that is used to make liquid crystal display device comprises:
Prepare first transparency carrier;
On first substrate, form polysilicon layer;
By first mask process composition polysilicon layer partly, and and then be formed with the source layer;
Form gate insulation layer comprising on first substrate of active layer;
Order forms first transparency conducting layer and the first metal layer on gate insulation layer;
By second mask process simultaneously composition first transparency conducting layer and the first metal layer, and and then form grid line, grid and first electrode;
On active layer, form source region and drain region;
On first substrate that comprises grid line, grid and first electrode, form the middle layer;
Be formed on gate insulation layer and middle layer in each zone on the active layer by the 3rd mask etching, and then form first contact hole and second contact hole, and the first metal layer on etching first electrode and middle layer and then expose first electrode;
On the middle layer, form second metal level;
By the 4th mask process composition second metal level, and then form data line, source electrode and drain electrode;
On first substrate that comprises data line, source electrode, drain electrode and first electrode, form passivation layer;
Utilize partly etch passivation layer of the 5th mask;
On passivation layer, form second transparency conducting layer; With
By the 6th mask composition second transparency conducting layer and then form second electrode, gap between the wherein said second electrode slit is formed enough narrowly with respect to second electrode, to form parabolic horizontal component of electric field with first electrode on first substrate, described first electrode and second distance between electrodes are formed narrowlyer than box gap.
21. method according to claim 20 is characterized in that, described first substrate is by glass or quartzy formation.
22. method according to claim 20 is characterized in that, the step of described formation polysilicon layer comprises:
Deposited amorphous silicon layer on transparency carrier; With
Utilize laser beam this amorphous silicon layer of annealing.
23. method according to claim 20 is characterized in that, in the step that forms grid line, grid and first electrode, part first transparency conducting layer is arranged in each bottom of grid line and grid, and the part the first metal layer is positioned at the top of first electrode.
24. method according to claim 20 is characterized in that, in the step that forms source region and drain region, by grid is injected into foreign ion on the active layer as the ion injecting mask.
25. method according to claim 24 is characterized in that, further comprises laser beam irradiation on source region and drain region, and then activates this source region and drain region.
26. method according to claim 20 is characterized in that, forming first contact hole and second contact hole and then exposing in the step of first electrode, carries out the wet etching that utilizes hydrofluoric acid solution.
27. method according to claim 20 is characterized in that, in the step of partially-etched described passivation layer, is formed for the 3rd contact hole that the drain electrode and second electrode are electrically connected to each other.
28. method according to claim 27 is characterized in that, described first electrode is the public electrode that is used to receive common signal, and described second electrode is the pixel electrode that is used for receiving from drain electrode data-signal.
29. method according to claim 20 is characterized in that, opens the grid pad in the step of partially-etched described passivation layer.
30. method according to claim 29 is characterized in that, described first electrode is and the pixel electrode that drains and link to each other and receive data-signal, and second electrode is the public electrode that is used to receive common signal.
31. method according to claim 20 is characterized in that, also further comprises:
On the whole surface of first substrate, form first oriented layer;
Prepare second substrate relative with first substrate;
On second substrate, form color filter;
On color filter, form second oriented layer;
First substrate bonded to each other and second substrate so that described first oriented layer and second oriented layer toward each other; And
Between first substrate and second substrate, insert liquid crystal layer.
32. method according to claim 31 is characterized in that, further comprises grinding described first oriented layer and second oriented layer.
33. method according to claim 20 is characterized in that, described first transparency conducting layer and second transparency conducting layer are made of selected at least a material from the group that comprises tin indium oxide, indium zinc oxide or tin indium oxide zinc.
34. method according to claim 20, it is characterized in that the described the first metal layer and second metal level are made of at least a material that is selected from the group that comprises molybdenum, molybdenum alloy, aluminium, aluminium alloy, titanium, titanium alloy, tantalum, tantalum alloy, cobalt, cobalt-base alloy, nickel or nickel alloy.
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