CN100433250C

CN100433250C - Manufacturing method for a semiconductor device, semiconductor device, circuit substrate and electronic device

Info

Publication number: CN100433250C
Application number: CNB200610092747XA
Authority: CN
Inventors: 深泽元彦
Original assignee: Seiko Epson Corp
Current assignee: Samsung Electronics Co Ltd
Priority date: 2005-06-17
Filing date: 2006-06-13
Publication date: 2008-11-12
Anticipated expiration: 2026-06-13
Also published as: CN1881530A

Abstract

A manufacturing method for a semiconductor device, includes: preparing a semiconductor wafer having an active surface and a rear surface; forming a plurality of semiconductor regions, each of which having semiconductor elements formed on the active surface of the semiconductor wafer; forming cutting regions on the outer periphery of the semiconductor regions on the active surface of the semiconductor wafer; forming, on the cutting region, a first groove which does not penetrate the semiconductor wafer; forming, on the rear surface of the semiconductor wafer, a second groove which does not penetrate to the first groove in the position corresponding to the cutting region; decreasing a thickness of the semiconductor wafer, connecting the first groove and the second groove, and dividing each of the semiconductor regions from the semiconductor wafer by executing isotropic etching to the rear surface of the semiconductor wafer; and obtaining a plurality of individual semiconductor devices.

Description

Manufacturing method for semiconductor device, semiconductor device, circuit substrate

Technical field

The present invention relates to manufacture method, semiconductor device, circuit substrate and the electronic equipment of semiconductor device.

Background technology

In recent years, in the electronic equipment of portable phone, notebook personal computer, PDA pockets such as (Personal DigitalAssistance), require miniaturization and lightweight.

Be accompanied by such miniaturization and light-weighted requirement, the installing space of various electronic devices such as semiconductor device that is arranged at the inside of electronic equipment is restricted, thereby also requires miniaturization at the electronic device of installing.

Under such background, in order to tackle the miniaturization of electronic device, the processing of carrying out repeatedly the high-density installation of stacked semiconductor device (the three-dimensional installation) widely and making electronic device self slimming.

Usually, under the situation that makes the semiconductor device slimming, in grinding overleaf (back grind) operation, form the face (back side) of the opposite side of face, implement the slimming of semiconductor wafer by grinding, polishing and the circuit of semiconductor wafer.

Then, in cutting (dicing) operation, form the semiconductor regions of face by the circuit that is formed at semiconductor wafer by each, dividing semiconductor wafer is made a plurality of semiconductor devices of slimming.

But, in such manufacture method, because of back side grinding process forms the crushable layer (damaged layer) that comprises fine crackle at the back side of semiconductor wafer.

And then, if the crushable layer at the back side of semiconductor wafer is ignored, and continuing to make the thin conductor device, it is problems such as basic point splits with the crackle of crushable layer that semiconductor element is then arranged.

And then, in cutting action, because mechanically cut semiconductor wafer, so these problems such as near fine crackle of the section of semiconductor wafer generation or smear metal are arranged by hypotenuse cutting (bevel cut) etc.

And, because semiconductor wafer is slim, so there is excessive stress to put on the problem of the part that has produced crackle or smear metal etc.

Therefore, in order to solve the problem that produces in grinding process overleaf and the cutting action, method shown below has for example been proposed.

(1) TOHKEMY 2000-228389 communique disclosed method is, be attached in strip material under the state on surface of the wafer that is formed with circuit, the back side of polished wafer, then by plasma etching polished the back side of wafer, implement the slimming of wafer with this.

According to this method, implement Wet-type etching (wet etching) by the back side to wafer, can remove crushable layer.

(2) TOHKEMY 2002-93752 communique disclosed method is, after having checked wafer, to cut the back side that is attached at semiconductor wafer with band via carrier frame, and face semiconductor wafer from element formation and not exclusively cut (semi-full dicing), peel off cutting then with being with.

Then,, impregnated in then in the etching solution, implement the slimming of semiconductor wafer via the film of carrier frame in the element formation face attaching chemically-resistant etching of semiconductor wafer.

According to this method, can carry out simultaneously: the polished backside of semiconductor wafer, dividing semiconductor wafer also form the semiconductor device of singualtion and remove the damaged layer (damage field) that is included in the affected layer that results from section in the incomplete cutting action or shattered crack etc.

But, in disclosed method as mentioned above, problem shown below is arranged.

(1) in TOHKEMY 2000-228389 communique disclosed method, because come grinding, polish and remove to be formed at the crushable layer at the back side of semiconductor wafer by plasma etching, so compare, grinding, polishing elongated problem of needed time are arranged with other engraving method.

(2) in TOHKEMY 2002-93752 communique disclosed method because semiconductor wafer is processed as slim after, not exclusively cut, so the problem of the difficult treatment of wafer is arranged.

(3) and then, in above-mentioned disclosed two methods, semiconductor device is being carried out under the situation of slimming, thereby is having stress to concentrate on the problem of the end semiconductor device breakage of semiconductor device easily.

Summary of the invention

The invention that the present invention makes just in view of the above problems, it is a kind of in the manufacturing process of semiconductor device that its purpose is to provide, remove smear metal or crushable layer effectively, and the stress when suppressing because of slimming is concentrated manufacture method, semiconductor device, circuit substrate and the electronic equipment of the semiconductor device of the breakage that causes.

In order to address the above problem, the manufacture method of semiconductor device of the present invention, preparation has active face, semiconductor wafer with the back side of a side opposite with described active face, described active face at described semiconductor wafer forms a plurality of semiconductor regions that have semiconductor element respectively, described active face at described semiconductor wafer, periphery at described semiconductor regions forms the cut-out zone, form first slot part that does not connect described semiconductor wafer in the described zone that cuts off, the described back side at described semiconductor wafer, forming second slot part that does not penetrate into first slot part corresponding to the described position that cuts off the zone, and by described back side enforcement isotropic etching to described semiconductor wafer, the thickness of the described semiconductor wafer of attenuate, link described first slot part and described second slot part, cut apart described semiconductor wafer by each described semiconductor regions, obtain by a plurality of semiconductor devices of singualtion.

According to this method, by implementing isotropic etching, remove the material of the semiconductor wafer between second slot part and first slot part, link second slot part and first slot part, and cut off (cutting apart) semiconductor wafer, thereby can access a plurality of semiconductor devices of coverlet sheetization by each semiconductor regions.

By such enforcement isotropic etching, by the formed bight, the back side (circumference at the back side of semiconductor device) of the section (side of semiconductor device) of semiconductor wafer and semiconductor device forms bending shape.

With this, can relax the stress that produces at the circumference of semiconductor device and concentrate, thereby can suppress the breakage of semiconductor device.

And, because the back side of removing semiconductor wafer by isotropic etching, so can make the semiconductor device slimming.

In order to address the above problem, the manufacture method of semiconductor device of the present invention, preparation has active face, semiconductor wafer with the back side of a side opposite with described active face, described active face at described semiconductor wafer forms a plurality of semiconductor regions that have semiconductor element respectively, described active face at described semiconductor wafer, periphery at described semiconductor regions forms the cut-out zone, form first slot part that does not connect described semiconductor wafer in the described zone that cuts off, imbed resin-shaped resin layer at described first slot part, the described back side at described semiconductor wafer, forming second slot part that does not penetrate into first slot part corresponding to the described position that cuts off the zone, and by described back side enforcement isotropic etching to described semiconductor wafer, the thickness of the described semiconductor wafer of attenuate, described resin bed is exposed, cut off described resin bed from described second slot part, and cut apart described semiconductor wafer, obtain by a plurality of semiconductor devices of singualtion by each described semiconductor regions.

According to this method, if implement spin etch as isotropic etching from the back side of semiconductor wafer, the material melts of the semiconductor wafer between second slot part and first slot part then, thus link second slot part and first slot part.

At this, because be formed with resin bed at first slot part of the active face that is formed at semiconductor wafer, so if second slot part and first slot part link then resin bed exposes, thereby the etching of first slot part stops because of resin bed.

By such resin bed, can prevent etching solution around the active face of going into, thereby can protect the semiconductor element of the active face that is formed at semiconductor wafer to semiconductor wafer.

And, implementing as isotropic etching under the situation of dry-etching from the back side of semiconductor wafer, after linking second slot part and first slot part, the etching of first slot part stops because of the resin bed that is formed at first slot part.

By such resin bed, can prevent etching gas around the active face of going into, thereby can protect the semiconductor element of the active face that is formed at semiconductor wafer to semiconductor wafer.

And, preferred in the manufacture method of semiconductor device of the present invention, after having formed described first slot part, make the described active face of described semiconductor wafer relative, and engage described active face and described support unit via adhesive linkage with the support unit of the described semiconductor wafer of supporting.

According to this method, the active face of semiconductor wafer is supported parts carry, and is protected by adhesive linkage.

Thereby, can suppress the bending of semiconductor wafer, thus the processing of the semiconductor wafer that can carry out by slimming effectively.

And in the manufacture method of semiconductor device of the present invention, described adhesive linkage preferably is made of the material that hardens by irradiation ultraviolet radiation.

According to this method,, semiconductor wafer easily can be fixed in support unit by to the adhesive linkage irradiation ultraviolet radiation.

And in the manufacture method of semiconductor device of the present invention, described adhesive linkage preferably is made of the material of foam by irradiation ultraviolet radiation (generation gas).

According to this method, by to the adhesive linkage irradiation ultraviolet radiation, can produce bubble at adhesive linkage, produce interface peel, thus can be from support unit stripping semiconductor wafer easily.

And in the manufacture method of semiconductor device of the present invention, described adhesive linkage preferably is made of the material that foams by heating.

According to this method, thereby produce bubble at adhesive linkage, can produce interface peel by adhesive linkage being applied heat, thus can be from support unit stripping semiconductor wafer easily.

And in the manufacture method of semiconductor device of the present invention, described adhesive linkage preferably is made of the resin material that dissolves in solvent.

According to this method, by adhesive linkage being dissolved in specific solvent, can be from support unit stripping semiconductor wafer easily.

And in the manufacture method of semiconductor device of the present invention, described support unit preferably is made of the material of ultraviolet (uv) transmission.

At this,, preferably use the bonding agent of the UV cured type that adherence for example reduces because of ultraviolet ray as the adhesive linkage of bonding semiconductor wafer and support unit.

According to this method because the support unit transmitting UV, so by from the support unit side to the adhesive linkage irradiation ultraviolet radiation, the adherence of adhesive linkage reduces, thereby can be from support unit stripping semiconductor wafer easily.

With this, the singualtion of the semiconductor device that can easily cut.

And, preferred in the manufacture method of semiconductor device of the present invention, after having formed described first slot part, the described back side of the described semiconductor wafer of back side grinding.

Usually, by back side grinding with the semiconductor wafer slimming after, formed second slot part at the back side of semiconductor wafer by cutting, in this case, crack (crushable layer) at the back side of semiconductor wafer and the internal face of second slot part.

Relative therewith, in the present invention, because after having formed second slot part, the back side of isotropic etching semiconductor wafer is so can remove when cutting action and the back side grinding process crackle (crushable layer) that produces at the back side of semiconductor wafer, smear metal etc. together.

With this, can realize improving the intensity of semiconductor device, and can make the semiconductor wafer slimming.

And, in the manufacture method of semiconductor device of the present invention, described isotropic etching preferably: under the state that makes the rotation of described semiconductor wafer, the spin etch of the etching solution that on the described back side of described semiconductor wafer, drips.

According to this method, can on the back side of semiconductor wafer, apply etching solution equably, thereby can make semiconductor wafer slimming equably.

And because spin etch is a Wet-type etching, so compare with come the situation of etched semiconductor wafer by plasma etching, etching speed is fast.

And in the manufacture method of semiconductor device of the present invention, described isotropic etching is dry-etching preferably.

According to this method, can make semiconductor wafer slimming equably.

And in the manufacture method of semiconductor device of the present invention, the width of described second slot part is preferably narrow than the width of described first slot part.

Second slot part that is formed at the back side of semiconductor wafer is formed at the opposite position of first slot part, and described first slot part is formed at the active face of semiconductor wafer.

At this, under the situation of vertical direction perspective semiconductor wafer, the formation zone of second slot part and the formation region overlapping of first slot part, and the formation zone of second slot part is included in the inboard in the formation zone of first slot part.

Thereby even how much depart from the center of the center of first slot part and second slot part, the formation zone of second slot part also is included in the inboard in the formation zone of first slot part.Do not need to be used to form described second slot part, high-precision positioning accuracy, thereby can easily form second slot part.

According to this method, because in cutting action, as long as in the width range of first slot part, the position of cutting blade or laser irradiation area are carried out contraposition get final product, thus allow some position deviations, thus the aligning accuracy when formation second slot part becomes easy.

Thereby, can realize the raising of cutting accuracy.

In addition, in the present invention, the width of first slot part and second slot part is meant, with respect to the length of the cutting direction of the cutting blade of first slot part that forms by cutting and second slot part or the direction vertical with respect to the direction of illumination of laser.

And, preferred in the manufacture method of semiconductor device of the present invention, form the cutting blade of taper by using leading section, form described first slot part or described second slot part.

According to this method, by using the cutting blade of point of a knife, form first slot part or second slot part as taper, the shape of first slot part or second slot part is also corresponding to the shape of the point of a knife of cutting blade and form taper.

By first slot part or second slot part of the such cone-shaped of etching, compare with the situation of using point of a knife to be shaped as the cutting blade of rectangular-shaped or toroidal, can easily make the bight bending of semiconductor device.

With this, because can easily form bend, concentrate, thereby can improve the rupture strength of semiconductor device so can relax to the stress of the circumference of semiconductor device at the circumference at the back side of semiconductor device, suppress the breakage of semiconductor device.

And, preferred in the manufacture method of semiconductor device of the present invention, by to described semiconductor wafer irradiating laser, form described first slot part or described second slot part.

According to this method, compare with blade cuts, process velocity is improved tremendously.

In order to address the above problem, the manufacture method of semiconductor device of the present invention, preparation has active face, semiconductor wafer with the back side of a side opposite with described active face, described active face at described semiconductor wafer forms a plurality of semiconductor regions that have semiconductor element respectively, described active face at described semiconductor wafer, periphery at described semiconductor regions forms the cut-out zone, form the slot part that does not connect described semiconductor wafer in the described zone that cuts off, and by described back side enforcement isotropic etching to described semiconductor wafer, the thickness of the described semiconductor wafer of attenuate, and cut apart described semiconductor wafer by each described semiconductor regions, obtain by a plurality of semiconductor devices of singualtion.

This method is suitable for: the situation that in the cut-out zone each other of a plurality of semiconductor regions TEG test patterns such as (Test Element Group) is not formed at semiconductor wafer.

According to the present invention, because do not need to cut off the TEG pattern, thus can omit the operation that forms slot part, thus can realize the simplification of manufacturing process.

And, preferred in the manufacture method of semiconductor device of the present invention, form the cutting blade of taper by using leading section, form described slot part.

According to this method, form slot part by using point of a knife as the cutting blade of taper, the shape of slot part is also corresponding to the shape of the point of a knife of cutting blade and form taper.

By the slot part of the such cone-shaped of etching, be that the situation of the cutting blade of rectangular-shaped or toroidal is compared with using point of a knife, can easily make the bight bending of semiconductor device.

And, preferred in the manufacture method of semiconductor device of the present invention, by described semiconductor wafer irradiating laser is formed described slot part.

In order to address the above problem, semiconductor device of the present invention has: the active face that is formed with semiconductor element; The back side of a side opposite with described active face; The side; And be formed between the described back side and the described side and crooked bight.

According to this structure,, concentrate so can relax the stress of the circumference of semiconductor device because the bight (circumference at the back side) that is formed by the back side and the side of semiconductor device forms agley.

With this, can improve by the intensity of the semiconductor device of slimming.

And, in semiconductor device of the present invention, preferably have and be formed between described active face and the described side and crooked bight.

According to this structure,, concentrate so can relax the stress of the circumference of semiconductor device because the bight (circumference of active face) that is formed by the active face and the side of semiconductor device forms agley.

In order to address the above problem, circuit substrate of the present invention has above-mentioned semiconductor device.

If compare with the width of first slot part as mentioned above, the width of narrowly formed second slot part, then the circumference at the active face of semiconductor device forms stage portion.

Therefore,,, then compare, in more ground, stage portion zone placement of adhesives with other zone if semiconductor device is installed (mode faces down) in circuit substrate via adhesive linkage according to the present invention.

With this, can improve the adaptation of semiconductor device and circuit substrate, thereby can realize the raising of reliability.

In order to address the above problem, electronic equipment of the present invention has the semiconductor device of making by the manufacture method of above-mentioned semiconductor device.

According to electronic equipment of the present invention because it is high and by the semiconductor device of slimming to have intensity as mentioned above, so can provide reliability to improve and miniaturization electronic equipment.

Description of drawings

Fig. 1 is the vertical view that the expression of pattern ground is formed with the semiconductor wafer of semiconductor element;

Fig. 2 A～Fig. 2 C is the profile of manufacturing process of the semiconductor device of expression first execution mode;

Fig. 3 A～Fig. 3 D is the profile of manufacturing process of the semiconductor device of expression first execution mode;

Fig. 4 A is the profile of pattern ground expression semiconductor device, and Fig. 4 B is the profile that the expression of pattern ground has been installed on semiconductor device the state of substrate;

Fig. 5 A～Fig. 5 E is the profile of manufacturing process of the semiconductor device of expression second execution mode;

Fig. 6 A～Fig. 6 D is the profile of manufacturing process of the semiconductor device of expression second execution mode;

Fig. 7 A is the profile of pattern ground expression semiconductor device, and Fig. 7 B is the profile that the expression of pattern ground has been installed on semiconductor device the state of substrate;

Fig. 8 A～Fig. 8 C is the profile of manufacturing process of the semiconductor device of expression the 3rd execution mode;

Fig. 9 A～Fig. 9 C is the profile of the manufacturing process of this semiconductor device of expression;

Figure 10 is the stereogram that the expression of pattern ground repeatedly has been laminated in semiconductor device the state of circuit substrate;

Figure 11 is the stereogram of the schematic configuration of expression portable phone;

Figure 12 is the profile of the formation operation of expression second slot part.

Embodiment

Below, with reference to the description of drawings embodiments of the present invention.

In addition, be used for each accompanying drawing of following explanation,, and suitably changing the engineer's scale of each parts for the size of each parts can be discerned.

[first execution mode]

(semiconductor wafer)

At first, illustrate with the semiconductor wafer before the semiconductor device singualtion.

Fig. 1 is the vertical view that the expression of pattern ground is formed with the semiconductor wafer 10 of a plurality of semiconductor regions 60.

Semiconductor wafer 10 is formed by silicon materials, is formed with a plurality of semiconductor regions 60 on semiconductor wafer 10.

On active face (active surface) 10a of semiconductor wafer 10, be formed with the integrated circuit that comprises transistor, memory element and other semiconductor element at each semiconductor regions 60.

In the present embodiment, so-called semiconductor regions 60 is zones that aftermentioned becomes semiconductor device, means the zone that was formed at before semiconductor device is by singualtion on the semiconductor wafer.

On the other hand, on the back side 10b of the opposition side of the active face 10a of semiconductor wafer 10, do not form above-mentioned semiconductor element.

And as shown in Figure 1, the zone between the semiconductor regions 60 of adjacency is formed with the cut-out region S.

Cutting off the TEG that region S is formed with the electrical characteristics such as switch element that are used to measure semiconductor element.

In addition, this TEG is because be cut off when cutting semiconductor chip, so the semiconductor element generation film to other is not loud.

(manufacture method of semiconductor device)

The manufacture method of semiconductor device then, is described.

Fig. 2 is A～and Fig. 2 C and Fig. 3 A～Fig. 3 D are that expression is until thereby semiconductor wafer 10 is carried out the profile that singualtion is made the operation of semiconductor device 61 by each semiconductor regions 60.

(projected electrode formation operation)

At first, shown in Fig. 2 A, prepare on active face 10a, to be formed with the semiconductor wafer 10 of semiconductor element.

Then, whole of the active face 10a of semiconductor wafer 10, the metal film that constitutes by aluminium metal materials such as (Al) by sputtering film-forming.

Then, the coating of whole on metal film resist.

Then, the resist that is coated on whole on the metal film is implemented exposure-processed and development treatment, with resist patterning (pattering) established practice setting shape.

Then, with patterning resist as mask, the etching metal film shown in Fig. 2 A, forms electrode pad (electrode pad) 14.

Then, whole of the active face 10a that comprises the semiconductor wafer 10 on the electrode pad 14, form by Si oxide (SiO by CVD method, thermal oxidation method etc. ₂) insulating barrier that constitutes.

Then, on insulating barrier, apply resist.

Then,, implement exposure-processed and development treatment, resist is patterned to the regulation shape being coated on the resist on whole on the insulating barrier.

Then, with patterning resist as mask, the etching metal film shown in Fig. 2 A, forms insulating barrier 12.

Insulating barrier 12 under the state that the upper surface that makes electrode pad 14 exposes, and is formed on whole of semiconductor wafer 10.

Then, the mode of exposing with electrode pad 14 on insulating barrier 12 forms protection resin bed 18.

Then, shown in Fig. 2 A, on the active face 10a of semiconductor wafer 10, apply resist.

Then,, utilize the mask that has only the part opening that forms projected electrode 16, carry out exposure-processed, then, implement development treatment being coated on the resist on whole on the active face 10a.

With this, resist is patterned.

Then, after having carried out Cu metallide (electrolytic plate) processing, remove resist.

With this, on electrode pad 14, form the projected electrode 16 of overshooting shape.

(first slot part forms operation)

Then, shown in Fig. 2 B, utilize cutting blade or laser (not shown), cutting is formed at the cut-out region S of periphery of semiconductor regions 60 of the active face 10a of semiconductor wafer 10.

At this moment, be the degree of depth of non-through semiconductor wafer 10 in the depth d 1 of cutting off region S enforcement cutting.

The depth d 1 of cutting for example is set to 25 μ m.

And cutting blade uses the blade of the tread degree that for example has 50 μ m.

With this, in the cut-out region S of the active face 10a of semiconductor wafer 10, forming depth d 1 is that 25 μ m, width w1 are first slot parts 20 of 50 μ m.

This first slot part 20 forms the periphery of clathrate with the semiconductor regions 60 of division semiconductor wafer 10 in Fig. 1.

And, utilizing under the situation of laser cutting, with respect to the tread degree change irradiated area of blade, thereby cut.

(bonding process of semiconductor wafer and glass substrate)

Then, shown in Fig. 2 C, prepare the glass substrate 22 (support unit) that constitutes by transparent material.

Then, semiconductor wafer 10 is disposed at downside, placement of adhesives on the active face 10a of semiconductor wafer 10 forms adhesive linkage 34.

In addition, adhesive linkage 34 also can be disposed at the surface of the glass substrate 22 relative with active face 10a.

At this, on glass substrate 22, use the part of the system that is called as WSS (Wafer Support System), the resin material that uses the ultraviolet response type that hardens by the irradiation of ultraviolet ray (UV light) is as adhesive linkage 34.

As the resin of UV cured type, for example use epoxy resin or acrylic resin.

Then, via the active face 10a of adhesive linkage 34 bonding semiconductor wafers 10, with the opposite face (face relative) of the glass substrate 22 that becomes supporting mass with active face 10a.

With this, the active face 10a of semiconductor wafer 10 is supported by glass substrate 22, and by adhesive linkage 34 protections.

Thereby, can suppress the bending of semiconductor wafer 10, thus can carry out slimming effectively the processing of semiconductor wafer 10.

And, can stably carry out back side grinding.

In addition, as adhesive linkage 34, except the resin of above-mentioned UV cured type, also can use by the foam material of (generation gas) or of ultraviolet irradiation by the foam material of (generation gas) of heat.

And, these adhesive linkages 34 are dissolved in: water; Methyl alcohol, ethanol etc. and glassware for drinking water have the organic solvent or the inorganic solvent of alcohol of intermiscibility etc. to use.

(back side grinding process)

Then, shown in 3A, make by adhesive linkage 34 bonding semiconductor wafers 10 to spin upside down, semiconductor wafer 10 is disposed at upside with glass substrate 22.

Then, the back side 10b of back side grinded semiconductor wafer 10.

By this back side grinding process, the thickness of semiconductor wafer 10 is ground to the thickness into regulation.

Specifically, be connected to the back side 10b of semiconductor wafer 10, and the grinding parts are relatively rotated for semiconductor wafer 10, with the back side 10b of this machining semiconductor wafer 10 by making grinding parts such as whetslate.

At this moment, overleaf in the grinding process, on the back side 10b of the semiconductor wafer 10 of polished, grinding, produce fine crackle, as shown in Figure 3A, on the 10b of the back side of semiconductor wafer 10, form crushable layer (20～30 μ m).

In the present embodiment, remove the crushable layer of the back side 10b that is formed at semiconductor wafer 10 by etching work procedure.

Therefore, in the grinding process, grinded semiconductor wafer 10 makes its thickness become the thickness (80 μ m) that has added the thickness of crushable layer and obtain on the thickness of the semiconductor wafer 10 that finally obtains overleaf.

(second slot part forms operation)

Then, shown in Fig. 3 B, use cutting blade (not shown), cut the position of the back side 10b corresponding with first slot part 20 on the active face 10a that is formed at semiconductor wafer 10.

With this, form second slot part 24 at the back side 10b of the opposition side of first slot part 20.

At this, the position of corresponding back side 10b is meant, under the situation of vertical direction perspective semiconductor wafer 10, the formation zone of second slot part 24, with the situation of the formation region overlapping of first slot part 20.

Form in the operation at second slot part, use the tread degree cutting blade shorter to carry out than the width w1 of first slot part 20.

Thereby, be replaced with the tread degree than the cutting blade narrow (for example, 30 μ m) that when having formed first slot part 20, uses, be the tread degree cutting blade shorter than the width w1 of first slot part 20, carry out second slot part and form operation.

At this, 10b carries out contraposition to cutting blade overleaf, makes it be contained in the scope of width w1 of first slot part 20, afterwards, and with the degree of depth of the bottom surface that do not reach first slot part 20, the back side 10b of cutting semiconductor chip 10.

Like this, form in the operation, because need only the cutting blade contraposition in the scope of the width w1 of first slot part 20, so allow some position deviations at second slot part.

Thereby the contraposition when forming second slot part 24 does not need high accuracy, thereby can easily form second slot part 24.

With this, for example form at the back side of semiconductor wafer 10 10b that depth d 2 is that 20 μ m, width w2 are second slot part 24 of 30 μ m, and form crackle shown in Fig. 3 B at the internal face of second slot part 24.

At this, be formed at the width w2 of second slot part 24 of the back side 10b of semiconductor wafer 10, become narrower than the width w1 of first slot part 20 of the active face 10a that is formed at semiconductor wafer 10.

In addition, also can use the cutting blade of identical tread degree to cut with second slot part 24, thereby the width w2 of the width w1 of first slot part 20 and second slot part 24 become about equally at first slot part 20.

And, utilizing under the situation of laser cutting, cut with respect to the tread degree of blade change irradiated area.

(isotropic etching operation)

Then, shown in Fig. 3 C, from the back side 10b enforcement Wet-type etching (isotropic etching) of semiconductor wafer 10.

With this, etching is formed at the crushable layer of the back side 10b of semiconductor wafer 10, and the internal face (comprising crushable layer) of second slot part 24 of etching simultaneously.

As Wet-type etching, adopt spin etch (spin etching) method.

Specifically, under the state that makes semiconductor wafer 10 rotation, the etching solution that the mixed liquor by for example fluoric acid and nitric acid of dripping on the 10b of the back side of semiconductor wafer 10 constitutes.

Like this, back side 10b internal face, semiconductor wafer 10 that etching comprises second slot part 24 of semiconductor wafer 10 removes crushable layers such as crackle.

And, if etching carry out, the material dissolves of the semiconductor wafer 10 between first slot part 20 and second slot part 24 then, the bottom surface of second slot part 24 arrives the bottom surface of first slot part 20, thereby forms the through hole 26 that links first slot part 20 and second slot part 24.

Thus, the thickness of semiconductor wafer 10 is turned to 50 μ m by slim, and semiconductor wafer 10 is cut along cutting off region S, and is separated by each semiconductor regions 60, thereby semiconductor device is by singualtion.

And,, form bend 28 in the formed bight of section 10c (bight of the peristome inlet of through hole 26) by the back side 10b and the through hole 26 of semiconductor wafer 10 by isotropic etching.

And then, in formed bight, bottom surface by the section 10c and first slot part 20 of through hole 26, by etching solution around going into to form bend 30.

In addition, in the isotropic etching operation, adopt dry-etching (isotropic etching) method, etching is formed at the crushable layer of the back side 10b of semiconductor wafer 10, and the internal face (comprising crushable layer) of second slot part 24 of etching simultaneously.

Under the situation of dry-etching, use the gas of fluorine system, the back side 10b of semiconductor wafer 10 of internal face that etching comprises second slot part 24 of semiconductor wafer 10 removes crushable layers such as crackle.

And if etching is carried out, then the material of the semiconductor wafer 10 between first slot part 20 and second slot part 24 is etched, and the bottom surface of second slot part 24 arrives the bottom surface of first slot part 20, thereby forms the through hole 26 that links first slot part 20 and second slot part 24.

Thus, the thickness of semiconductor wafer 10 is turned to 50 μ m by slim, and semiconductor wafer 10 is cut along cutting off the zone, thereby separated by singualtion by each semiconductor regions 60.

And, implementing under the situation of dry-etching as isotropic etching, form bend 28 in the formed bight of section 10c (bight of the peristome inlet of through hole 26) by the back side 10b and the through hole 26 of semiconductor wafer 10.

And then, in formed bight, bottom surface by the section 10c and first slot part 20 of through hole 26, by etching gas or plasma around going into to form bend 30.

(stripping process)

Then, shown in Fig. 3 D,, produce interface peel, semiconductor wafer 10 is separated with glass substrate 22 at adhesive linkage 34 by making ultraviolet ray penetrate glass substrate 22 to adhesive linkage 34 irradiation ultraviolet radiations.

With this, a plurality of semiconductor devices 61 that can obtain by singualtion.

According to present embodiment, form second slot part 24 by cutting at the back side of semiconductor wafer 10 10b, and pass through the slimming that semiconductor wafer 10 is implemented in back side grinding, the back side 10b to semiconductor wafer 10 implements isotropic etching then.

With this, can remove the crackle (crushable layer) of the back side 10b that when cutting action and back side grinding process, results from semiconductor wafer 10 and smear metal etc. in the lump, and also can carry out the slimming of semiconductor wafer 10 simultaneously.

With this, can realize improving the intensity of semiconductor device 61.

And, because by isotropic etching (spin etch or dry-etching), separate a plurality of semiconductor regions 60 that (cut-out) is formed at semiconductor wafer 10, so become crooked shape by the section and the formed bight 28 of semiconductor back surface 10b of semiconductor wafer 10.

With this, can relax to the stress of the circumference of semiconductor device 61 and concentrate, thereby can suppress the breakage of semiconductor device 61.

In addition, by controlling the etched processing time, can adjust the shape in bight 28.

For example, if increase the etched processing time, then bight 28 can form round shape, and on the other hand, if shorten the etched processing time, then bight 28 can form and more approach horn shape.

And, according to present embodiment because isotropic etching is a spin etch, so etching solution can be coated on equably on the back side 10b of semiconductor wafer 10, thereby can make semiconductor wafer 10 slimming equably.

And because spin etch is a Wet-type etching, so compare with come the situation of etched semiconductor wafer 10 by plasma etching, etching speed accelerates.

Thereby, can realize shortening the manufacturing time of semiconductor device 61.

(semiconductor device)

Then, the semiconductor device that the manufacture method of the semiconductor device by aforesaid present embodiment is made is described.

Fig. 4 A is the profile of pattern ground expression semiconductor device 61.

Shown in Fig. 4 A, semiconductor device 61 has semiconductor element (diagram slightly), and described semiconductor element has: the integrated circuit that is made of the transistor on the active face 10a that is formed at the matrix 10 that is made of silicon, memory element, other electronic component.

On semiconductor element, be formed with projected electrode 16 etc.

Shown in Fig. 4 A,, etched by above-mentioned isotropic Wet-type etching by back side 10b and the formed bight of side 10c (circumference of the back side 10b of semiconductor device 61) of semiconductor device 61.

With this, form bend 28 in above-mentioned bight.

And, make the semiconductor device 61 of present embodiment in such a way: when cutting semiconductor chip 10, form first slot part 20 at the active face 10a of semiconductor wafer 10, the 10b side forms width second slot part 24 narrower than first slot part 20 overleaf, links first slot part 20 and second slot part 24 by spin etch then.

Therefore, shown in Fig. 4 A, because at the circumference of the active face 10a of semiconductor device 61, first slot part 20 is different with the width of second slot part 24, so form stage portion 17.

And, active face 10a and the formed bight of side 10c (circumference of the active face 10a of semiconductor device 61) by this stage portion 17, as mentioned above, by having connected the etched of second slot part 24 and first slot part 20 etching solution afterwards, be formed with bend 30 in the bight around going into.

In addition, the shape of stage portion 17 is adjusted freely by the width that changes

slot part

20,24.

Fig. 4 B is the profile of circuit substrate 50 that expression is equipped with the semiconductor device 61 of present embodiment.

Shown in Fig. 4 B, semiconductor device 61 with the

bend

28,30 that is formed at active face 10a and back side 10b, active face 10a one side (is faced down) down, and via for example anisotropic conductive film (ACP:anisotropic conductive paste) 42 etc. and be installed in circuit substrate 50.

Bonding agent as beyond the ACP also can use the dielectric resin material that comprises anisotropic conducting film (ACF:anisotropic conductive film), non-conductive film (NCF:Non Conductive Film) or nonconductive paste (NCP:Non Conductive Paste).

According to present embodiment, because be formed with

bend

28,30 at the active face 10a of semiconductor device 61 and the circumference of back side 10b, concentrate so can relax to the stress of the circumference of semiconductor device 61, the rupture strength of semiconductor device 61 is improved, thereby can suppress the breakage of semiconductor device 61.

And, be formed with stage portion 17 at the circumference of semiconductor device 61, in stage portion 17 zones, compare with other zone, dispose bonding agents such as ACP morely.

With this, semiconductor device 61 improves with the adaptation of circuit substrate 50, thereby can realize the raising of reliability.

[second execution mode]

Then, with reference to the description of drawings present embodiment.

The manufacturing process of the semiconductor device 61 of present embodiment imbeds resin material in the inside of first slot part 20, forms resin bed.Therefore, the manufacturing process of the semiconductor device 61 of second execution mode is different with the manufacturing process of the semiconductor device 61 of above-mentioned first execution mode.

In the present embodiment, explain the operation that forms resin bed in the inside of first slot part 20, the operation later,, mark identical symbol and describe for the identical part of the semiconductor device 61 of structure and above-mentioned first execution mode with it, for other operation, simplify explanation.

(electrode, first slot part form operation)

At first, as shown in Figure 5, be formed at semiconductor element on the semiconductor wafer 10 of active face 10a, form electrode pad 14, and then on electrode pad 14, form the projected electrode 16 of overshooting shape.

Then, shown in Fig. 5 B, utilize the cut-out region S of cutting blade or laser (not shown) cutting, form first slot part 20 of non-through semiconductor wafer 10 in the periphery formation of the semiconductor regions 60 of the active face 10a of semiconductor wafer 10 side.

(resin bed imbed operation)

Then, shown in Fig. 5 C, to the coating of the inside of first slot part 20 and imbed resin, form resin bed 32 by spin coated (spin coat) method, ink-jet (ink jet) method etc.

At this, as the material of resin, the preferred use for the etching solution that uses when carrying out spin etch described later (mixed liquor of fluoric acid and nitric acid) has for example ultraviolet hardening resin epoxy resin of patience or other low temperature thermosetting resin etc.

(bonding, back side grinding process)

Then, shown in Fig. 5 D, prepare the glass substrate 22 (support unit) that constitutes by transparent material, on the active face 10a of semiconductor wafer 10 and at least one square one-tenth adhesive linkage 34 of the one side of glass substrate 22 (face relative) with active face 10a.

Then, via the active face 10a of adhesive linkage 34 bonding semiconductor wafers 10 and the one side that becomes the glass substrate 22 of supporting mass.

Then, shown in Fig. 5 E, the back side 10b of grinded semiconductor wafer 10 carries out the slimming operation and makes the thickness of semiconductor wafer 10 become the thickness of regulation.

At this moment, overleaf in the grinding process, produced fine crackle at the back side 10b of the semiconductor wafer 10 of polished, grinding, shown in Fig. 5 E, 10b has formed crushable layer at the back side of semiconductor wafer 10.

(second slot part forms operation)

Then, as shown in Figure 6A, utilize cutting blade or laser (not shown), cut and be formed at the position of first slot part, the 20 corresponding back side 10b of active face 10a.

With this, 10b forms second slot part 24 of no show first slot part 20 overleaf.

At this moment, form as shown in Figure 6A crackle at the internal face of second slot part 24.

And, be formed at the width w2 of second slot part 24 of the back side 10b of semiconductor wafer 10, become narrower than the width w1 of first slot part 20 of the active face 10a that is formed at semiconductor wafer 10.

In addition, the width w2 of the width w1 of first slot part 20 and second slot part 24 also can be about equally.

(isotropic etching operation)

Then, shown in Fig. 6 B, from the back side 10b enforcement Wet-type etching (isotropic etching) of semiconductor wafer 10.

With this, etching is formed at the crushable layer of the back side 10b side of semiconductor wafer 10, and the internal face of second slot part 24 of etching simultaneously.

With this, comprise that back side 10b internal face, semiconductor wafer 10 of second slot part 24 of semiconductor wafer 10 is etched, remove crushable layers such as crackle.

If etching is carried out, then the material of the semiconductor wafer between second slot part 24 and first slot part 20 is removed, and the resin bed 32 that is embedded in first slot part 20 exposes.

Because resin bed 32 has patience for etching solution, so resin bed 32 is not etched.

In addition, adopting under the situation of dry-etching method as the isotropic etching operation, shown in Fig. 6 B, implement dry-etching (isotropic etching) by back side 10b one side from semiconductor wafer 10, come etching to be formed at the crushable layer of the back side 10b side of semiconductor wafer 10 with this, and the internal face of second slot part 24 of etching simultaneously.

With this, back side 10b internal face, semiconductor wafer 10 that etching comprises second slot part 24 of semiconductor wafer 10 removes crushable layers such as crackle.

(resin bed cut-out operation)

Then, shown in Fig. 6 C,, towards first slot part, 20 cutting resin layers 32, and cut off resin bed 32 from second slot part 24 by utilizing cutting blade or laser etc.

With this, semiconductor wafer 10 is cut along cutting off region S, and is separated by each semiconductor regions 60, thus the semiconductor device that has obtained by singualtion.

At this moment, the cutting blade that has with the width tread degree about equally of second slot part 24 by utilization cuts, can with the side 10c of semiconductor device 61, with the side 32a planarization of resin bed 32.

(stripping process)

Then, shown in Fig. 6 D,, produce interface peel, semiconductor wafer 10 is separated with glass substrate 22 at adhesive linkage 34 by making ultraviolet ray penetrate glass substrate 22 to adhesive linkage 34 irradiation ultraviolet radiations.

According to present embodiment, linked second slot part 24 and first slot part 20 by spin etch after, the resin bed 32 that is formed at first slot part 20 exposes.

At this, resin bed 32 is not etched.

With this, can prevent etching solution to the active face 10a of semiconductor wafer 10 around going into, thereby can protect the semiconductor element of the active face 10a that is formed at semiconductor wafer 10.

(semiconductor device)

The semiconductor device 61 of present embodiment is embedded at resin bed 32 on the inside this point of first slot part 20, and is different with the semiconductor device 61 of above-mentioned first execution mode.

Therefore, in the present embodiment,, mark identical symbol and describe for the structure part identical with the semiconductor device 61 of above-mentioned first execution mode, and the simplification explanation.

Fig. 7 A is the profile of pattern ground expression semiconductor device 61.

Shown in Fig. 7 A,, etched by above-mentioned isotropic Wet-type etching by back side 10b and the formed bight of side 10c (circumference of the back side 10b of semiconductor device 61) of semiconductor device 61.

With this, form bend 28 in above-mentioned bight.

And, because be formed with resin bed 32 by imbedding resin at first slot part 20, thus different with above-mentioned first execution mode, there is not circumference formation stage portion at the active face 10a of semiconductor device 61.

That is, the side 10c of semiconductor device 61 is by: the matrix 10 that is made of silicon, constitute with resin bed 32.

Fig. 7 B is the profile of circuit substrate 50 that expression is equipped with the semiconductor device 61 of present embodiment.

Shown in Fig. 7 B, have the semiconductor device 61 of the bend 28 that is formed at back side 10b, active face 10a one side (is faced down) down, via for example anisotropic conductive film (ACP) etc., and be installed in circuit substrate 50.

According to present embodiment, because the circumference at the back side of semiconductor device 61 10b is formed with bend 28, concentrate so can relax, the rupture strength of semiconductor device 61 is improved, thereby can suppress the breakage of semiconductor device 61 to the stress of the circumference of semiconductor device 61.

[the 3rd execution mode]

Then, with reference to the description of drawings present embodiment.

The manufacture method of the semiconductor device 61 of present embodiment, a plurality of semiconductor regions 60 in semiconductor wafer not separately between the cut-out region S form on this point of TEG, different with the manufacture method of the semiconductor device 61 of above-mentioned first execution mode.

In the present embodiment, operation, structure for identical with above-mentioned first execution mode mark identical symbol, omit explanation, only the part different with above-mentioned first execution mode are described.

Fig. 8 is A～and Fig. 8 C and Fig. 9 A～Fig. 9 C are that expression is until the profile of thereby semiconductor wafer 10 singualtion being made the operation of semiconductor device 61 by each semiconductor regions 60.

(semiconductor wafer)

At first, with reference to Fig. 1, Fig. 8 A, describe for the semiconductor wafer 10 that is formed with semiconductor regions 60.

On the semiconductor wafer 10 that constitutes by silicon materials, be formed with a plurality of semiconductor regions 60.

At the active face 10a of each semiconductor regions 60, be formed with the integrated circuit that constitutes by transistor, memory element, other semiconductor element.

Then, shown in Fig. 8 A, stacked insulating barrier 12 and protection resin bed 18 on integrated circuit.

The a plurality of semiconductor regions 60 that are formed at semiconductor wafer 10 are separated from each other and form, and the gap between this semiconductor regions 60 becomes and is used to utilize cutting blade or laser to cut off the cut-out region S of semiconductor wafer 10.

At this, in the above-described first embodiment, though cutting off the TEG that region S is formed with the electrical characteristics that are used to measure semiconductor element, in the present embodiment, do not form test patterns (test pattern) such as TEG in this cut-out region S.

Therefore, shown in Fig. 8 A,, semiconductor wafer 10 is arranged so the cut-out region S is exposed because do not have to be formed for protecting the insulating barrier 12 of TEG and to protect resin bed 18 etc. in the cut-out region S each other of semiconductor regions 60.

(manufacture method of semiconductor device)

The manufacture method of semiconductor device then, is described.

(semiconductor regions formation operation)

At first, shown in Fig. 8 A, form a plurality of semiconductor regions 60 at the active face 10a of semiconductor wafer.

At this moment, the cut-out region S between semiconductor regions 60 does not form distribution, insulating barrier and protection resin beds such as TEG, makes corresponding to semiconductor wafer 10 surfaces of the position that cuts off region S and exposes.

Because this cut-out region S does not form TEG, insulating barrier 12 and protection resin bed 18, so be formed with slot part.

Therefore; in the present embodiment; because the insulating barrier 12 or the protection resin bed 18 that do not need to cut off the mutual TEG that is formed at semiconductor regions 60 and cover TEG, form operation so can omit first slot part that has illustrated in the above-described first embodiment.

(bonding process of semiconductor wafer and glass substrate)

Then, shown in Fig. 1 and Fig. 8 B, via the adhesive linkage 34 bonding semiconductor wafers 10 and glass substrate 22 that are formed with a plurality of semiconductor regions 60.

At this moment, adhesive linkage 34 also is configured in the slot part of the cut-out region S between the semiconductor regions 60.

As adhesive linkage 34, preferably use the epoxy resin of UV cured type or acrylic resin etc.

(back side grinding process)

Then, shown in Fig. 8 C, the back side 10b of back side grinded semiconductor wafer 10.

In the grinding process, the thickness of semiconductor wafer 10 is ground to the thickness of regulation overleaf.

At this moment, form the crushable layer that causes because of back side grinding at the back side of semiconductor wafer 10 10b.

(slot part formation operation)

Then, shown in Fig. 9 A,, cutting blade or laser (not shown) are carried out contraposition and cuts in the cut-out region S each other of the semiconductor regions 60 of the active face 10a that is formed at semiconductor wafer 10.

At this moment, the tread degree of cutting blade or laser irradiation area preferably have the narrow width of width than the cut-out region S each other of semiconductor regions 60.

With this, because as long as in the scope of the width that cuts off region S, cutting blade or laser irradiation area are carried out contraposition, thus allow some position deviations, thus the aligning accuracy when forming slot part becomes easy.

(isotropic etching operation)

Then, shown in Fig. 9 B, implement Wet-type etching (isotropic etching) by the back side 10b from semiconductor wafer 10, etching is formed at the crushable layer of the back side 10b of semiconductor wafer 10, and the internal face (comprising crushable layer) of the slot part of etching simultaneously 24.

As Wet-type etching, preferably use the spin etch method.

If etching is carried out, the then bottom surface of slot part 24 and internal face dissolving, the bottom surface of slot part 24 arrives the cut-out region S each other of semiconductor regions 60, forms the active face 10a of binding semiconductor wafer 10 and the through hole 26 of back side 10b.

By this etch processes, the thickness attenuation of semiconductor wafer 10, and semiconductor wafer 10 is cut along cutting off region S, separated by each semiconductor regions 60, thus a plurality of semiconductor devices 61 that obtained by singualtion.

In addition, in the isotropic etching operation, also can adopt dry-etching (isotropic etching) method.

Adopting under the situation of dry-etching, shown in Fig. 9 B, by isotropic etching, etching is formed at the crushable layer of the back side 10b of semiconductor wafer 10 from the back side 10b of semiconductor wafer 10.

And, the internal face (comprising crushable layer) of the slot part of etching simultaneously 24.

Under the situation of carrying out dry-etching, preferably carry out the etching under the gas of fluorine system.

If etching is carried out, then the bottom surface of slot part 24 and internal face are etched, and the bottom surface of slot part 24 arrives the cut-out region S each other of semiconductor regions 60, form the active face 10a of binding semiconductor wafer 10 and the through hole 26 of back side 10b.

(stripping process)

Then, shown in Fig. 9 C,, produce interface peel, semiconductor wafer 10 is separated with glass substrate 22 at adhesive linkage 34 by making ultraviolet ray penetrate glass substrate 22 to adhesive linkage 34 irradiation ultraviolet radiations.

The method of present embodiment preferably is used in: the cut-out region S each other of the semiconductor regions 60 on semiconductor wafer 10 does not form the situation of TEG pattern.

According to present embodiment, because can omit the operation that forms first slot part in first execution mode and second execution mode, so can realize the simplification of manufacturing process.

Other effect is identical with above-mentioned first execution mode.

＜stacked semiconductor device 〉

Figure 10 has illustrated the stacked semiconductor device of a plurality of semiconductor devices 61 stacked.

As shown in figure 10, above-mentioned semiconductor device 61 is installed on circuit substrate 50.

Circuit substrate 50 is made of organic system substrates such as for example glass epoxide (glass epoxy) substrates.

For example be formed with the Wiring pattern (not shown) that constitutes by copper etc. and make it become desired circuit at circuit substrate 50.

On these Wiring patterns, be connected with pad (not shown).

On this pad, be electrically connected with the solder ball of semiconductor device 61.

With this, semiconductor device 61 is installed on the circuit substrate 50.

In the present embodiment, stacked a plurality of semiconductor device 61 and stacked semiconductor device 56 that constitutes is installed on the circuit substrate 50.

In forming the method for stacked semiconductor device 56, the method that can be listed below:, come stacked semiconductor device 61 by making soldering-tin layer solidify (sclerosis) by utilizing after soldering tip as thermal source makes the soldering-tin layer fusion.

In addition, also can between stacked semiconductor device 61, fill underfilling (not shown) as the resin of insulating properties.

And, when stacked semiconductor device 61, can the stacked semiconductor device 61 in each layer ground, also can be by using (reflow) the stacked semiconductor device 61 in the lump that refluxes.

＜electronic equipment 〉

An example of electronic equipment of the present invention then, is described.

Figure 11 is the stereogram that expression has the portable phone (electronic equipment) of above-mentioned semiconductor device 61 or stacked semiconductor device 56.

As shown in figure 11, to have to be the folding first main body 106a and the second main body 106b of center with hinge 122 to portable phone 600.

Be provided with liquid-crystal apparatus 601, a plurality of action button 127 at the first main body 106a, answer mouth 124 and antenna 126.

And, be provided with the mouth 128 of speaking at the second main body 106b.

According to present embodiment, because have the semiconductor device 61 or the stacked semiconductor device 56 of intensity height as mentioned above and slimming, so the electronic equipment that has improved reliability and miniaturization can be provided.

In addition, the semiconductor device 61 of present embodiment also can be applied to various electronic equipments except above-mentioned portable phone.

For example, can be applied to: have liquid crystal projector, tackle video recording device (videotape recorder), electronic memo, electronic desktop computer, automobile navigation apparatus, the POS terminal of multimedia personal computer (PC) and engineering work station (EWS), pager, word processor, television set, view finder (viewfinder) type or monitor (monitor) direct viewing type, the electronic equipments such as device of touch panel.

And the present invention is not limited to above-mentioned example, also can apply all changes in the scope that does not break away from purport of the present invention.

And, also can in the scope that does not break away from purport of the present invention, make up each above-mentioned example.

And, form in the operation at second slot part of above-mentioned execution mode, also can in the preceding one procedure of etching work procedure, make second slot part 24 connect first slot part 20 and cut.

And, in the above-described embodiment, after the active face 10a of semiconductor wafer 10 has formed first slot part 20, make the active face 10a of semiconductor wafer 10 relative with glass substrate 22, and via adhesive linkage 34 bonding semiconductor wafers 10 and glass substrate 22.

The back side 10b of back side grinded semiconductor wafer 10 can glass substrate 22 be attached under the situation of semiconductor wafer 10 yet.

And then, in the above-described embodiment,, make semiconductor wafer 10 slimmings by the back side 10b of back side grinding with the opposite side of active face 10a of semiconductor wafer 10.

Relative therewith, under preparing in advance, also can omit above-mentioned back side grinding process by the situation of the semiconductor wafer 10 of slimming.

As shown in figure 12, preferably use the end of the point of a knife of cutting blade 38 to form the cutting blade of taper (section is V word shape).

With this, can be suppressed at and crack in the cutting action or smear metal.

And, by such cutting blade that uses point of a knife as taper, the slot part of semiconductor wafer 10 also be accompanied by cutting blade 38 point of a knife shape and form taper.

Therefore, having the slot part of this cone-shaped by etching, is that the situation of the cutting blade of rectangular-shaped or toroidal is compared with using point of a knife, can make the bight of semiconductor device 61 easily crooked.

With this, because can easily form bend 28 at the circumference of the back side of semiconductor device 61 10b, concentrate so can relax, can improve the rupture strength of semiconductor device 61, thereby can suppress the breakage of semiconductor device 61 to the stress of the circumference of semiconductor device 61.

Claims

1. the manufacture method of a semiconductor device wherein, comprises the steps:

Preparation has the semiconductor wafer at the back side of active face and a side opposite with described active face,

Described active face at described semiconductor wafer forms a plurality of semiconductor regions that have semiconductor element respectively,

At the described active face of described semiconductor wafer, cut off the zone in the periphery formation of described semiconductor regions,

Form first slot part that does not connect described semiconductor wafer in the described zone that cuts off,

At the described back side of described semiconductor wafer, forming second slot part that does not penetrate into first slot part corresponding to the described position that cuts off the zone,

And by the described back side enforcement isotropic etching to described semiconductor wafer, the thickness of the described semiconductor wafer of attenuate links described first slot part and described second slot part, and cuts apart described semiconductor wafer by each described semiconductor regions,

Obtain by a plurality of semiconductor devices of singualtion.

2. the manufacture method of semiconductor device as claimed in claim 1, wherein,

After having formed described first slot part, make the described active face of described semiconductor wafer relative, and engage described active face and described support unit via adhesive linkage with the support unit of the described semiconductor wafer of supporting.

3. the manufacture method of semiconductor device as claimed in claim 2, wherein,

Described adhesive linkage is made of the material that hardens by irradiation ultraviolet radiation.

4. the manufacture method of semiconductor device as claimed in claim 2, wherein,

Described adhesive linkage is made of the material that foams by irradiation ultraviolet radiation.

5. the manufacture method of semiconductor device as claimed in claim 2, wherein,

Described adhesive linkage is made of the material that foams by heating.

6. the manufacture method of semiconductor device as claimed in claim 2, wherein,

Described adhesive linkage is made of the resin material that dissolves in solvent.

7. the manufacture method of semiconductor device as claimed in claim 2, wherein,

Described support unit is made of the material of ultraviolet (uv) transmission.

8. the manufacture method of semiconductor device as claimed in claim 1, wherein,

After having formed described first slot part, the described back side of the described semiconductor wafer of back side grinding.

9. the manufacture method of semiconductor device as claimed in claim 1, wherein,

Described isotropic etching is: under the state that makes described semiconductor wafer rotation, and the spin etch of the etching solution that on the described back side of described semiconductor wafer, drips.

10. the manufacture method of semiconductor device as claimed in claim 1, wherein,

Described isotropic etching is a dry-etching.

11. the manufacture method of semiconductor device as claimed in claim 1, wherein,

The width of described second slot part is narrower than the width of described first slot part.

12. the manufacture method of semiconductor device as claimed in claim 1, wherein,

By using leading section to form the cutting blade of taper, form described first slot part or described second slot part.

13. the manufacture method of semiconductor device as claimed in claim 1, wherein,

By to described semiconductor wafer irradiating laser, form described first slot part or described second slot part.

14. the manufacture method of a semiconductor device wherein, comprises the steps:

Form the slot part that does not connect described semiconductor wafer in the described zone that cuts off,

And implement isotropic etching by the described back side to described semiconductor wafer, the thickness of the described semiconductor wafer of attenuate, and cut apart described semiconductor wafer by each described semiconductor regions,

Obtain by a plurality of semiconductor devices of singualtion.

15. the manufacture method of semiconductor device as claimed in claim 14, wherein,

By using leading section to form the cutting blade of taper, form described slot part.

16. the manufacture method of semiconductor device as claimed in claim 14, wherein,

By to described semiconductor wafer irradiating laser, form described slot part.

17. a semiconductor device, wherein,

Have:

Be formed with the active face of semiconductor element;

The back side of a side opposite with described active face;

The side; And

Be formed between the described back side and the described side and crooked bight.

18. semiconductor device as claimed in claim 17, wherein,

Have and be formed between described active face and the described side and crooked bight.

19. a circuit substrate, wherein,

Has semiconductor device as claimed in claim 17.

20. the manufacture method of a semiconductor device comprises the steps:

Imbed resin-shaped resin layer at described first slot part,

And by the described back side enforcement isotropic etching to described semiconductor wafer, the thickness of the described semiconductor wafer of attenuate exposes described resin bed,

Cut off described resin bed from described second slot part, and cut apart described semiconductor wafer by each described semiconductor regions,

Obtain by a plurality of semiconductor devices of singualtion.

21. the manufacture method of semiconductor device as claimed in claim 20, wherein,

22. the manufacture method of semiconductor device as claimed in claim 21, wherein,

23. the manufacture method of semiconductor device as claimed in claim 21, wherein,

24. the manufacture method of semiconductor device as claimed in claim 21, wherein,

Described adhesive linkage is made of the material that foams by heating.

25. the manufacture method of semiconductor device as claimed in claim 21, wherein,

26. the manufacture method of semiconductor device as claimed in claim 21, wherein,

27. the manufacture method of semiconductor device as claimed in claim 20, wherein,

After having formed described first slot part, the described back side of the described semiconductor wafer of back grinding.

28. the manufacture method of semiconductor device as claimed in claim 20, wherein,

29. the manufacture method of semiconductor device as claimed in claim 20, wherein,

Described isotropic etching is a dry-etching.

30. the manufacture method of semiconductor device as claimed in claim 20, wherein,

31. the manufacture method of semiconductor device as claimed in claim 20, wherein,

32. the manufacture method of semiconductor device as claimed in claim 20, wherein,