CN100430780C - Semiconductor photoelectron waveguide - Google Patents
Semiconductor photoelectron waveguide Download PDFInfo
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- CN100430780C CN100430780C CNB2004800288988A CN200480028898A CN100430780C CN 100430780 C CN100430780 C CN 100430780C CN B2004800288988 A CNB2004800288988 A CN B2004800288988A CN 200480028898 A CN200480028898 A CN 200480028898A CN 100430780 C CN100430780 C CN 100430780C
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Abstract
The present invention relates to a semiconductor optoelectronic waveguide having an nin-type hetero structure which is able to stably operate as an optical modulator. On the upper and lower surfaces of the core layer 11 determined for the structure so that electro-optical effects are effectively exerted at an operating light wavelength and at the same time light absorption poses no problem are provided with intermediate clad layers (12-1 and 12-2) having a band gap which is greater than that of the core layer 11 in order to prevent carriers generated by light absorption from being trapped by the hetero interface. Respectively on the upper surface of the intermediate clad layer 12-1 and the lower surface of the intermediate clad layer 12-2 are provided the clad layers 13-1 and 13-2 having the band gap which is greater than those of the intermediate clad layers. On the upper surface of the clad layer 13-1 are sequentially laminated a p-type layer 15 and an n-type layer 16. In the applied voltage range used under an operating state, a whole region of the p-type layer 15 and a part or a whole region of the n-type layer 16 are depleted.
Description
Technical field
The present invention relates to a kind of semiconductor photoelectron waveguide, relate in particular to a kind of semiconductor photoelectron waveguide with nin type heterojunction structure of the operating stably that can carry out photomodulator.In addition, relate to a kind of semiconductor photoelectron waveguide, have the electrical separation areal structure of the photoelectron waveguide that uses nin type heterojunction structure, and be used for the ultra high-speed optical modulator of long wavelength's frequency band.
Background technology
With regard to high capacity optical communication system in recent years, the light signal of the above High Speed Modulation of Gbit/s is carried out in transmission, but because transmission range is long more, be vulnerable to the dispersion effect influence of optical fiber more, so pulse shape distortion is the essential few light signal of wavelength linear FM (wavelength chirping) that uses.Therefore, the generation of common light signal is not to be undertaken by the direct modulation with the laser diode (LD) that splits great county in Shandong Province, but carries out by the LD and the external modulator of the action of combination direct current.
The existing typical external modulator that is used for the long Distance Transmission of light signal is by LiNbO
3(LN) the LN modulator of waveguide path formation.The operating principle of this LN modulator is in the photoelectron waveguide in conjunction with optical waveguide path and electric waveguide path, produces based on photoelectric variations in refractive index, utilizes this variations in refractive index to provide phase change to light.This LN modulator can be used as optical phase modulator or has assembled the light intensity modulator of mach-zehnder (MZ:Mach Zehnder) interferometer or the high function photoswitch that constitutes in conjunction with a plurality of waveguide paths.
But, because LiNbO
3Be dielectric substance, so the LN modulator needs senior manufacturing technology in the processing of the stabilization of material surface or waveguide path.In addition, the waveguide path-length must be longer, the essential use special photoetching process different with common semiconductor machining.And the size that the encapsulation of LN modulator is installed must not be constant big.Therefore, exist the manufacturing cost of LN modulator block to uprise, the larger-size problem of optical transmitter.
In addition, also know semiconductor light modulator based on the operating principle the same with the LN modulator, for example, known on semiconductive GaAs configuration Xiao take off base electrode (Schottky electrode), and this electrode be made as the GaAs photomodulator of photoelectron waveguide, or by utilizing heterogenous pn junction, except that light closes, to waveguide path core, effectively applying the InP/InGaAsP photomodulator of voltage etc.
But in these semiconductor light modulators, there is the problem that the waveguide path-length is long, electric loss is big in the former, and the latter exists because the light absorption of p clad is big, and the waveguide path must not be got length, so can not reduce the problem of operation voltage.Propose that recently the both sides clad of InP/InGaAsP photomodulator also is made as the structure of n type (so-called nin type structure), as the structure of avoiding these problems (for example with reference to patent documentation 1 and patent documentation 2).
Fig. 9 is the figure that expression constitutes the frequency band chart of the semiconductor photoelectron waveguide that has typical InP/InGaAsP photomodulator now, symbol 101 is sandwich layers of waveguide path among the figure, 102-1 and 102-2 are first clads, and 103-1 and 103-2 are respectively second clads of p type and n type.In addition, 100-1 and 100-2 are respectively electronics and hole (hole), apply voltage to p type second clad 103-1 and the n type second clad 103-2, make the photoelectric effect of sandwich layer 101 induction expectations, realize optical modulation.In this existing waveguide path, because the voltage that utilizes pn to tie to carry out to sandwich layer 101 applies,, or flow to the outside easily by the charge carrier (carrying ion) that light absorption produces so leakage current is few, realize operating stably.
But, possess the problem that GaAs photomodulator that Xiao takes off base electrode exists operation voltage to uprise.In addition, the InP/InGaAsP photomodulator removes because the impedance height of p type clad causes the transmission loss of electric signal, thus the action frequency domain narrow beyond because the light absorption of p type clad is big, thus can not increasing wave guiding path length, be difficult to low operation voltageization.The transmission loss of the electric signal in the InP/InGaAsP photomodulator is undertaken producing in the charging and discharging process by the impedance of signal wire and the impedance of the p type second clad 103-1 at the pn knot.Especially the impedance of the p type second clad 103-1 is owing to the degree of excursion material property low, that resistance value is high that is the hole causes, so can not avoid.In view of this problem, propose the waveguide path of nin type structure recently.
Figure 10 is the figure of frequency band chart of the semiconductor photoelectron waveguide of the expression nin type structure that waveguide path both sides clad (103-1 and 103-2) of InP/InGaAsP photomodulator shown in Figure 9 all is made as the n type, to between these two n type electrode layers, apply voltage, make the device action.Symbol 111 is sandwich layers of waveguide path among the figure, and 112-1 and 112-2 are first clads.Be two electrode layers (114-1 and 114-2) are made as the n type and come the p type second clad 103-1 (for example with reference to patent documentation 1) in the permutation graph 9 with the Fe doping semi-insulating layer 115 with dark Fe energy level 116 and n type electrode layer 114-1 with the distinctive points of formation shown in Figure 9.In addition, n type electrode layer 114-2 is equivalent to the n type second clad 103-2 among Fig. 9, and 110-1 and 110-2 are respectively electronics and hole (hole).
In this formation, because the dark Fe energy level 116 of semi-insulating layer 115 is as the Ionized main effect that is subjected to, so frequency band is crooked because of its electric charge, formation is to the potential barrier of electronics, shown in arrow among the figure, near the electronics 114-1 of bend that is positioned at frequency band combines through the dark Fe energy level 116 of semi-insulating layer 115 with hole 110-2 again.Therefore, can utilize this potential barrier to suppress the leakage current of electronics, can apply electric field to sandwich layer 111.
But, in the waveguide path of this structure,, change so the ionization state of energy level depends on bias voltage owing to do not think that the density of dark Fe energy level 116 is enough high.The bias-dependent of this ionization state produces following result, and promptly change in voltage causes the depletion layer variation in thickness, can not keep applying voltage and put on proportionate relationship between the voltage on the sandwich layer 111.And, since longer based on the interval of catching, discharging of the charge carrier of dark Fe energy level 116, handle so be difficult to the high-speed response modulation signal, and modulate intensity is brought frequency dispersion.
In addition, the key concept of so-called ' apply voltage between two n type electrode layers, make the device action ' is as so-called body potential barrier (bulk barrier) diode, known before in field of electronic devices being, example as being applied to photomodulator has the report (for example with reference to patent documentation 2) of ' modulator of the sandwich layer of the charge carrier frequency band filling effect of importing induced quantum trap '.Because this photomodulator utilizes the discrepancy of the sub-trap of electron vectors, so compare with utilizing photoelectric photomodulator, can not accelerate responsiveness on the principle.
Figure 11 is the pie graph with semiconductor light modulator of existing nin type structure, the 3rd semiconductor clad of symbol 121 expression n types among the figure, the 5th semiconductor clad of 122 expression p types, 123 expressions, the first semiconductor clad, 124 expressions have photoelectric semiconductor sandwich layer, 125 expressions, the second semiconductor clad, the 4th semiconductor clad of 126 expression n types, 127,128 expression n type electrodes, the electrical separation zone that utilizes etching to form of 129 expression concavities.Also be reported in the semi-conductive electrical separation structure of regrowth half insulation (for example with reference to patent documentation 1) in the etching part of this concavity, but, may not be the method that is best suited for photomodulator because structure is complicated.
On n type the 3rd semiconductor clad 121, stack gradually p type the 5th semiconductor clad 122 and the first semiconductor clad 123, setting has photoelectric semiconductor sandwich layer 124, and this semiconductor sandwich layer 124 is by this first semiconductor clad 123 and 125 clampings of the second semiconductor clad.And on the second semiconductor clad 125, stacked have n type the 4th a semiconductor clad 126 concavity, that utilize the electrical separation zone 129 that etching forms.On the 4th semiconductor clad 126, be provided with electrode 128, simultaneously, the convex shaped part both sides at the 3rd semiconductor clad 121 are provided with electrode 127.
In waveguide passway structure shown in Figure 11, because the part of n type InP clad 126 is etched into concavity electrical separation zone 129 is set, thus the part that changes at coating thickness, the variation that produces optical transmission mode, the result produces the light scattering loss.In addition, in existing waveguide passway structure, the etching of the 4th semiconductor clad 126 is darker, its controlled being a problem.
But, with regard to the typical construction of this nin type InP/InGaAsP photomodulator, owing to carry out the waveguide passage portion of modulation and the electrical separation that is connected the waveguide passage portion in its outside, in the waveguide path, can produce recess 129 by a part of removing part upper strata n type clad 126.This from connect the waveguide path to the electrical separation area part, from the electrical separation area part to main waveguide passage portion, produce the light loss that the transmission mode of following light changes.And, since must be under electrical separation area part (recess) the high impedance clad more than the residual specific thickness, so thickness that can not this high impedance clad of attenuation can not effectively apply electric field to semiconductor sandwich layer 124.
The present invention makes in view of the above problems, and its purpose is to provide a kind of semiconductor photoelectron waveguide operating stably, that have the heterogeneous structure of nin type that carries out photomodulator.
In addition, the object of the present invention is to provide a kind of semiconductor photoelectron waveguide, constitute the electrical separation zone with former formation recess and compare, can not cause big influence, solve the problem of light loss, in addition the transmission of optical mode, controlled good, stably have the electrical separation areal structure.
And purpose of the present invention solves the above-mentioned problem that causes the change of sandwich layer voltage in semiconductor photoelectron waveguides such as nin type InP/InGaAsP photomodulator, realizes the operating stably of semiconductor photoelectron waveguide.
Patent documentation 1: the spy opens the 2003-177368 communique
Patent documentation 2: No. 5647029 instructions of United States Patent (USP)
Summary of the invention
To achieve these goals, semiconductor photoelectron waveguide of the present invention is characterised in that to possess: be configured in the first semiconductor clad on each face of interarea with photoelectric semiconductor sandwich layer and another interarea; Be configured in the second semiconductor clad on this first semiconductor clad; Pn tie the layer, be configured on the described second semiconductor clad of an interarea side that is laminated in described semiconductor sandwich layer, the described second semiconductor clad side is the p type, with the described second semiconductor clad opposition side be the n type; With the 3rd semiconductor clad, be configured in be laminated in that described pn knot layer is gone up and the described second semiconductor clad of another interarea side of described semiconductor sandwich layer on, as n type electrode layer, the band gap of the described first semiconductor clad is bigger than the band gap of described semiconductor sandwich layer, and each of the band gap of described second semiconductor clad and described the 3rd semiconductor clad band gap than the described first semiconductor clad respectively is big.
According to this semiconductor photoelectron waveguide of the present invention, can make the frequency band profile control transfiguration of the heterogeneous structure of nin type that photoelectron waveguide possesses easy, so the semiconductor photoelectron waveguide that can carry out the operating stably of photomodulator can be provided.Thus, do not damage the speciality of the semiconductor photoelectron waveguide of the low heterogeneous structure of nin type of driving voltage, realize more stable optical modulation action, help the low power consumption and the low price of module.
In addition, semiconductor photoelectron waveguide of the present invention is characterised in that: possess and have effective photoelectric semiconductor sandwich layer; The first and second semiconductor clads, about this semiconductor sandwich layer of difference clamping, band gap is bigger than this semiconductor sandwich layer; The third and fourth semiconductor clad about this first and second semiconductor cladding layers of difference clamping, comprises n type impurity; The 5th semiconductor layer disposes the described first and the 3rd semiconductor clad in substrate-side, is configured between this first semiconductor clad and described the 3rd semiconductor clad, comprise p type impurity, and band gap is bigger than described semiconductor sandwich layer; At least one electrical separation zone implements to form based on the material sex change of ion implantation to described the 4th semiconductor clad; Main areas and the electrode of described the 3rd semiconductor clad in separately with beyond the described electrical separation zone that is separately positioned on described the 4th semiconductor clad apply voltage to described semiconductor sandwich layer.
According to this semiconductor photoelectron waveguide of the present invention, a kind of semiconductor photoelectron waveguide can be provided, compared with former electrical separation zone based on recess formation, can not cause big influence to the transmission of optical mode, solve the problem of light loss, in addition, controlled good, stably have the electrical separation areal structure.In addition, the present invention is the performance effect aspect the stable photomodulator characteristic that realizes using the heterogeneous structure of nin type with the low characteristic of driving voltage, reduces input optical power, helps the low power consumption and the low price of optical modulator module.
And semiconductor photoelectron waveguide of the present invention is characterised in that: possess: have photoelectric semiconductor sandwich layer; The first and second semiconductor clads, about this semiconductor sandwich layer of difference clamping, band gap is bigger than this semiconductor sandwich layer; The 3rd semiconductor clad is configured under this first semiconductor clad, comprises n type impurity; The 4th semiconductor clad is configured on described second semiconductor cladding layers; The 5th semiconductor layer, dispose described the 3rd semiconductor clad and the described first semiconductor clad in substrate-side, between described second semiconductor clad and described the 4th semiconductor clad, comprise p type impurity, and band gap is bigger than described semiconductor sandwich layer; Be formed at the main areas of the n type modulating wave guiding path in the part in described the 4th clad; Separated region is adjacent to this main areas, has p type electric conductivity, and described main areas contacts with common electrode; With an electrode that is arranged in described the 3rd semiconductor clad, apply voltage to described semiconductor sandwich layer through described two electrodes.
According to this semiconductor photoelectron waveguide of the present invention, can suppress to use the parasitic bipolar electrode effect of the photoelectron waveguide of the heterogeneous structure of nin type, the result, can utilize the hole that is accumulated in the p type barrier layer, solve potential barrier variation in altitude, produce leakage current and cause the problem of sandwich layer change in voltage.
In addition,, allow higher input optical power, the output of optical transmission module is increased the stable characteristic aspect performance effect that realizes using photomodulator with the heterogeneous structure of nin type that can reduce features such as driving voltage.
Description of drawings
Figure 1A is the oblique view of explanation semiconductor photoelectron waveguide one embodiment of the present invention.
Figure 1B is the figure of the frequency band chart of the semiconductor photoelectron waveguide shown in expression Figure 1A.
Fig. 2 is the figure of frequency band chart of the semiconductor photoelectron waveguide of expression another embodiment of the present invention.
Fig. 3 is the oblique view of explanation another embodiment of semiconductor photoelectron waveguide of the present invention.
Fig. 4 is the explanation semiconductor photoelectron waveguide of the present invention oblique view of an embodiment again.
Fig. 5 is the oblique view of the another embodiment of explanation semiconductor photoelectron waveguide of the present invention.
Fig. 6 is the oblique view of the another embodiment of explanation semiconductor photoelectron waveguide of the present invention.
Fig. 7 is the oblique view of the another embodiment of explanation semiconductor photoelectron waveguide of the present invention.
Fig. 8 is the oblique view of the another embodiment of explanation semiconductor photoelectron waveguide of the present invention.
Fig. 9 is the figure that expression constitutes the frequency band chart of the semiconductor photoelectron waveguide that has typical InP/1nGaAsP photomodulator now.
To be expression all be made as the figure of frequency band chart of semiconductor photoelectron waveguide of the nin type structure of n type with the clad of the waveguide path both sides of InP/InGaAsP photomodulator shown in Figure 9 to Figure 10.
Figure 11 is the oblique view that explanation has the semiconductor light modulator of existing nin type structure.
Embodiment
Below, with reference to accompanying drawing embodiments of the invention are described.
Embodiment 1
Figure 1A and Figure 1B are the pie graphs of explanation semiconductor photoelectron waveguide one embodiment of the present invention, and Figure 1A is the oblique view of this photoelectron waveguide, and Figure 1B is the figure of its frequency band chart of expression.Symbol 11 is semiconductor sandwich layers among the figure, and 12-1,12-2 are the first semiconductor clads that is disposed on 11 two interareas of semiconductor sandwich layer, and 13-1,13-2 are the second semiconductor clads that is disposed at respectively on the first semiconductor clad 12-1, the 12-2.14-1,14-2 are the 3rd semiconductor clads.15,16 is respectively p type layer, n type layer, constitutes pn knot layer by two layers 15 and 16.
Configuration p type layer 15 on the second semiconductor clad 13-1, configuration the 3rd semiconductor clad 14-1 on n type layer 16.In addition, configuration the 3rd semiconductor clad 14-2 under the second semiconductor clad 13-2.
The structure of sandwich layer 11 is defined as under the action optical wavelength, the photoelectric effect useful effect, and light absorption is out of question.For example, under the situation of device that is 1.5 microns frequency bands, form by the InGaAlAs compound and form quantum well layer with barrier layer and make the Ga/Al of these layers form the sandwich layer 11 that different multiple quantum traps is constructed.
On sandwich layer 11 with below, for make charge carrier that light absorption produces not at heterogeneous interface place trap (being captured), be provided with have the band gap bigger than the band gap of sandwich layer 11, have a tundish coating (12-1,12-2) that InGaAlAs etc. forms.
On tundish coating 12-1 and tundish coating 12-2 below, be provided with respectively and have clad 13-1 and the 13-2 band gap bigger, composition such as InGaAlAs than these tundish coating.
On clad 13-1, stack gradually InGaAlAs for example p type layer 15, with the n type layer 16 of for example InGaAlAs, that uses under operating state applies under the voltage range, exhausts the whole zone of p type InGaAlAs layer 15 and the subregion or the whole zone of n type InGaAlAs layer 16.Determine the doping content profile of these layers,, promptly excite the sufficient potential barrier of induction, determine that the doping content of these layers distributes electronics so that the potential change of the frequency band of this depleted region is enough big.The doping content of these layers preferably p type layer 15 is 1 * 10
17Cm
-3More than, n type layer 16 is 5 * 10
17Cm
-3More than.For example, the doping content with p type layer 15 is made as 2 * 10
17Cm
-3, the doping content of n type layer 16 is made as 1 * 10
18Cm
-3
On n type InGaAlAs layer 16 and clad 13-2 below, be provided with respectively as n type layer 14-1 and 14-2 clad, that InGaAlAs etc. forms, on n type layer 14-1, electrode 18-1 is set.In addition, the band gap of these n types layer 14-1 and 14-2 is configured to bigger than the band gap of tundish coating 12-1 and 12-2.In addition, will be arranged on the subregion of n type electrode layer 17 interareas as the undermost n type of these lit-par-lit structure bodies layer 14-2 with electrode 18-2.
In order to be used as photoelectron waveguide, formation comprises the waveguide passway structure of table top structure in the cross section of Figure 1A example, under the state that light is transmitted,, between n type layer 14-1 and n type layer 14-2, apply voltage from electrode 18-1 and 18-2 input electric signal in this waveguide path.
As the Figure 1B that applies the frequency band chart under the state from expression voltage understands, utilization is by the leakage current that exists formed potential barrier to suppress to follow the electronics from n type layer 14-1 to inject of p type InGaAlAs layer 15 and n type InGaAlAs layer 16, on the other hand, the alms giver that advocated peace of the shallow energy level of the hole 10-2 that is produced because of light absorption (though only having a bit) in p type InGaAlAs layer 15 and n type InGaAlAs layer 16 combines again, can apply voltage to sandwich layer 11 thus.
If with the frequency band chart of Figure 1B and band diagram epiphase ratio shown in Figure 10, then the waveguide path with respect to former formation excites induced potential to change by the dark energy level of ionization, in structure of the present invention, by determining the concentration main and alms giver that is subjected to of shallow energy level, to apply the electric field intensity of expectation to sandwich layer 11, can control the electromotive force shape really thus.
In addition, in Figure 1A and Figure 1B, the pn knot layer that p type InGaAlAs layer 15 and n type InGaAlAs layer 16 constituted is arranged between clad 13-1 and the n type layer 14-1, but also can change this formation, is arranged between clad 13-2 and the n type layer 14-2.
Embodiment 2
When action,, also generate electronics 10-1 and hole 10-2 by the light absorption in the sandwich layer 11 although have only a bit.Wherein, electronics 10-1 arrives n type layer 14-2 easily, and hole 10-2 might be accumulated near the crooked rapid n type InGaAlAs layer 16 of frequency band.The hole 10-3 formation p type InGaAlAs layer 15 of this accumulation and the clockwise direction bias voltage main cause in the pn knot between the n type InGaAlAs layer 16, so constitute the potential barrier that reduces in this zone, be difficult to apply voltage, simultaneously, cause the reason of injecting electronics from n type layer 14-1 side to sandwich layer 11.
In present embodiment 2, owing to make this accumulation hole 10-3 combination more fast, so p type InGaAlAs layer 15 and n type InGaAlAs layer 16 are made as the layer of high-concentration dopant, thickness by attenuation pn knot, make electronics spatially approaching, improve between the frequency band shown in the arrow among Figure 1B the probability of combination again with the accumulation hole.Thus, remove in the sandwich layer 11 near the hole 10-3 that produces and be accumulated in the n type InGaAlAs layer 16 fast, can suppress the variation in altitude of the potential barrier that forms by p type InGaAlAs layer 15 and n type InGaAlAs layer 16.
Embodiment 3
The semiconductor photoelectron waveguide of present embodiment 3 is in the layer of the n type InGaAlAs layer 16 that is equivalent to Fig. 1, and in the doping donor impurity, doped F e etc. form the impurity of deep level.In addition, set the doping that forms the impurity of deep level more much lower than the doping of donor impurity.According to this doping, the impurity that forms deep level can not cause big influence to the frequency band profile, on the other hand, uprises through the join probability again of deep level, can remove fast because light absorption and the hole that produces in sandwich layer 11.
Embodiment 4
Fig. 2 is the figure of frequency band chart of the semiconductor photoelectron waveguide of the expression embodiment of the invention 4, and the layer that will be equivalent to the n type InGaAlAs layer 16 of Fig. 1 becomes the less n type layers 19 of band gap energy such as InGaAsP.By with poor (the Δ E of band gap between the n type layers 19 such as p type layers 15 such as InGaAlAs and InGaAsP
G) being made as the shape of expectation with doping profile, the part of the hole 10-2 that produces in sandwich layer 11 because of light absorption arrives this n type InGaAsP layer 19 (10-3), combination more fast.Here, when control electromotive force shape, the valence band uncontinuity between preferred p type InGaAlAs layer 15 and the n type InGaAsP layer 19 is littler than conduction band discontinuity.This is because the valence band uncontinuity is more little, and then the hole is easy of more the interface of p type InGaAlAs layer 15 with n type InGaAsP layer 19.
In explanation before this, when explanation is of the present invention, InGaAlAs and InGaAsP are exemplified as the constituent material of waveguide path, but are not limited to these materials, also can constitute waveguide path of the present invention by the III-V compound semiconductor that comprises AlGaAs series.
Embodiment 5
Fig. 3 is the oblique view of the embodiment 5 of explanation semiconductor photoelectron waveguide of the present invention, symbol 21 expression n types the 3rd semiconductor clad among the figure, 22 expression p types the 5th semiconductor clad, 23 expressions, the first semiconductor clad, 24 expressions have photoelectric semiconductor sandwich layer, 25 expressions, the second semiconductor clad, 26 expression n types the 4th semiconductor clad, 27,28 expression n type electrodes, the electrical separation zone that 29 expression ions inject to form, what 29-1 represented n type the 4th semiconductor clad 26 and electrical separation zone 29 is connected the waveguide passage region.
On n type the 3rd semiconductor clad 21, stack gradually p type the 5th semiconductor clad 22 and the first semiconductor clad 23, by the first semiconductor clad 23 and 25 clampings of the second semiconductor clad, setting has photoelectric semiconductor sandwich layer 24.And, on the second semiconductor clad 25, stacked n type the 4th semiconductor clad 26 with the electrical separation zone 29 that forms by the ion injection.On the 4th semiconductor clad 26, electrode 28 is set, simultaneously, the both sides at the convex shaped part of the 3rd semiconductor clad 21 are provided with electrode 27.
That is, semiconductor photoelectron waveguide of the present invention has the duplexer of heterogeneous semiconductor structure, promptly possesses at least and has effective photoelectric semiconductor sandwich layer 24; The first and second semiconductor clads 23,25, about this semiconductor sandwich layer 24 of clamping, and band gap is bigger than this semiconductor sandwich layer 24; With the third and fourth semiconductor clad 21,26, about this first and second semiconductor cladding layers 23,25 of clamping, comprise n type impurity.
At substrate (not shown) side configuration the first and the 3rd semiconductor clad 23,21.Between this first semiconductor clad 23 and the 3rd semiconductor clad 21, insert the 5th semiconductor layer 22, the five semiconductor layers 22 and comprise p type impurity, and band gap is bigger than semiconductor sandwich layer 24.In addition, in the 4th semiconductor clad 26, inject the electrical separation zone 29 that forms at least one position by ion.In addition, in the main areas and the 3rd semiconductor cladding layers 21 beyond the electrical separation zone 29 of the 4th semiconductor clad 26, single electrode 28,27 is set respectively, applies voltage to semiconductor sandwich layer 24.
Like this, from substrate-side stack gradually the 3rd InPn type clad 21, comprise p type impurity the 5th InP clad 22, be generally an InP clad 23 and the semiconductor sandwich layer 24 of low doping concentration, the structure of this semiconductor sandwich layer 24 is defined as photoelectric effect effective action under the action optical wavelength, light absorption is out of question, if the device of 1.5 microns frequency bands, the layer that then constitutes the Ga/Al composition that will change InGaAlAs becomes the multiple quantum trap structure of quantum well layer and barrier layer respectively.
And, on semiconductor sandwich layer 24, the configuration low doping concentration the 2nd InP clad 25, with the 4th InPn type clad 26.Opposite with electrode 27, apply positive voltage to electrode 28, come the light modulated phase place according to photoelectric effect.That uses under operating state applies under the voltage range, and the 5th InP clad 22 to the 2nd InP clads 25 are all exhausted, and in addition, makes n type the 3rd InPn type clad 21 and the 4th semiconductor clad 26 part depletions.Because the 5th InP clad 22 is p types, so move as the potential barrier of relative electronics.
In order to make this device as photoelectron waveguide, become following state, promptly, import electric signals, between the 3rd InPn type clad 21 and the 2nd InP clad 25, apply voltage to electrode 28 along under the state of the direction transmission light vertical with the cross section of table top structure shown in Figure 3.Usually, when using photoelectron waveguide as photomodulator, must dispose the optical modulation waveguide passage portion that applies voltage from electrode 28, and connect the waveguide path in the light I/O side configuration of this optical modulation waveguide passage portion, and between these parts of electrical separation.
In the semiconductor photoelectron waveguide of present embodiment 5, in the part shown in the symbol 29, by ion implantation, the p shape zone (electrical separation zone) that the part of the 4th InPn type clad is made as the high impedance zone or is surrounded by the pn knot.
In addition, in present embodiment 5, feature also is and will be doped in as to the potential barrier of electronics and the 5th InP clad 22 in the p shape of moving is configured in the bottom.This is for fear of because the crystal defect that ion produces when injecting, and the Temperature Distribution of making the ionized acceptor of potential barrier is affected.That is, be used to prevent when applying bias voltage that barrier shape worsens, the leakage current of knot increases.
In addition, in the formation of present embodiment 5, be injected into ion species in the electrical separation zone 29, use Be etc. in InP, to form the atom of being led or form the main atom of dark alms giver/be subjected to energy level as ion.Become in electrical separation zone 29 under the situation of p type, the electrical impedance of this part is compared with the electrical impedance of the n type layer of the doping of same degree, exceed about more than 30 times, even without becoming high impedance layer, also can prevent from electrical separation zone 29, transmit and cause modulation efficiency decline because of the input electric signal.Much less, it is good to be made as high impedance layer, even if but only be changed to the p type from the n type, the function of electrical separation is improved.
In existing waveguide passway structure shown in Figure 11,, electrical separation zone 129 is set because the part of n type InP clad 126 is etched to concavity, so in the part of the variation in thickness of clad, produce the variation of optical transmission mode, the result produces the light scattering loss.On the other hand, in the structure of present embodiment 5, do not produce this light scattering loss of following optical transmission mode to change.In addition, in existing structure, the etching of the 4th semiconductor clad 126 is darker, its controlled being a problem, and in the structure of present embodiment 5, do not produce this problem.As a result, the structure of present embodiment 5 has improved the regional problem that forms the existing photoelectron waveguide that causes of electrical separation, by reducing light loss, the output of photomodulator is increased, and in addition, it is easy that the structure when element is made is controlled transfiguration.
Embodiment 6
Fig. 4 is the oblique view of the embodiment 6 of explanation semiconductor photoelectron waveguide of the present invention, symbol 31 expression n types the 3rd semiconductor clad among the figure, 32 expressions are configured in p type the 5th semiconductor clad on the 3rd semiconductor clad 31,33 expressions are configured in the first semiconductor clad on the 5th semiconductor clad 32,34 expressions are configured on the first semiconductor clad 33, has photoelectric semiconductor sandwich layer, 35 expressions are configured in the second semiconductor clad on the semiconductor sandwich layer 34,36 expressions are configured in n type the 4th semiconductor clad on the second semiconductor clad 35,37,38 expression n type electrodes, the electrical separation zone of a plurality of pn structures one-tenth that form is injected in 39 expressions by ion.In addition, the lit-par-lit structure beyond the electrical separation zone 39 is the same with the embodiment 5 of Fig. 3.
In the foregoing description 5, electrical separation zone 29 respectively is arranged at a position in the both sides of the 4th InPn type clad 26, in present embodiment 6, connects a plurality of ion implanted regions territory, and it is made as electrical separation zone 39.Injecting part at ion be under the situation of p type layer, owing to as the electrical separation regional integration, be the form of pn knot that is connected in series, descends the leakage current in reduction electrical separation zone so put on the voltage that pn ties on each.
Usually, inject the residual lattice imperfection of pn knot that forms by ion, flow through recombination current (leakage current) easily.This electrical separation layer is configured in useful in this case.
Embodiment 7
Fig. 5 is the oblique view of the embodiment 7 of explanation semiconductor photoelectron waveguide of the present invention, symbol 41 expression n types the 3rd semiconductor clad among the figure, 42 expressions are configured in p type the 5th semiconductor clad on the 3rd semiconductor clad 41,43 expressions are configured in the first semiconductor clad on the 5th semiconductor clad 42,44 expressions are configured on the first semiconductor clad 43, has photoelectric semiconductor sandwich layer, 45 expressions are configured in the second semiconductor clad on the semiconductor sandwich layer 44,46 expressions are configured in n type the 4th semiconductor clad on the second semiconductor clad 45,47,48 expression n type electrodes, the electrical separation zone that forms is injected in 49 expressions by ion, 50-1 represents to be formed at the electrode in n type the 4th semiconductor clad, and 50-2 represents to be formed at electrode in n type the 4th semiconductor clad and is made as wiring with the 3rd clad same potential.In addition, n type electrode 50-1 is the same with embodiment 5 shown in Figure 3 with wiring 50-2 lit-par-lit structure in addition.
By holding electrical separated region 49, with the 4th semiconductor clad 46 of the part of optical modulation waveguide passage portion antagonism in, form n type electrode 50-1,50-2 connects this n type electrode 50-1 with wiring, and its current potential is made as the current potential identical with the 3rd semiconductor clad 41.Under the not sufficiently high situation of the impedance in electrical separation zone, can get rid of the current potential that improves 49 outsides, electrical separation zone, beyond main waveguide passage portion, apply the problem of bias voltage.
That is, the present invention is the performance effect aspect the stable photomodulator characteristic that realizes using the heterogeneous structure of nin type with the low characteristic of driving voltage, reduces input optical power, helps the low power consumption and the low price of optical modulator module.In addition, in the various embodiments described above, illustrate InP and InAlGaAs are made as the semiconductor photoelectron waveguide of semiconductor material, but also can be equally applicable to use in the photoelectron waveguide structure of other III-V compound semiconductor that comprises AlGaAs series or InGaAsP.
Embodiment 8
The semiconductor photoelectron waveguide of above-mentioned embodiment 5 shown in Figure 3 all is made as n type (so-called nin type structure) with the clad of InP/InGaAsP photomodulator both sides, but in this formation, as when sandwich layer 24 applies voltage, do not flow through shown in the electronic current, barrier layer to electronics must be set, as this barrier layer,, insert the semiconductor clad 22 that imports p type doped layer at the downside of sandwich layer 24.N type clad 26 both sides, top of sandwich layer 24 are made as p type layer, with it as electrical separation layer 29.In addition, the 21st, n type the 3rd semiconductor clad, 23 is first semiconductor clads, and 25 is second semiconductor clads, and 29-1 is the connection waveguide passage region of the 4th semiconductor clad 26,29, the 27, the 28th, electrode.
In the waveguide passway structure of nin type InP/InGaAsP photomodulator shown in Figure 3, has the good feature that can reduce driving voltage, but how many sandwich layers 24 has light absorption, wherein the hole of Chan Shenging is accumulated in the barrier layer 22, the result, judgement reduces the potential barrier of electronics, causes phenomenons (parasitic electric transistor effect) such as producing leakage current, and this is the problem that also should solve.That is, if with transistor action, then become under the base stage open state, if the base stage hole concentration rises, the emitter/base junction state of being setovered clockwise then.And, the voltage of the biasing clockwise because voltage that puts on sandwich layer 24 also descends, so the result is a modulating characteristic because of optical wavelength or light intensity change, this has limited the scope of utilizing as modulator.
Fig. 6 is the oblique view of the embodiment 8 of explanation semiconductor photoelectron waveguide of the present invention, symbol 61 expressions the 3rd semiconductor clad among the figure, 62 expressions are configured in the first semiconductor clad on the 3rd semiconductor clad 61,63 expressions are configured in the semiconductor sandwich layer on the first semiconductor clad 62,64 expressions are configured in the second semiconductor clad on the semiconductor sandwich layer 63,65 expressions are configured in the 5th semiconductor clad on the second semiconductor clad 64,66 expressions are configured in the 4th semiconductor clad on the 5th semiconductor clad 65,66-1 represents the optical modulation zone, 66-2 represents separated region, 66-3 connects waveguide passage region, 67,68 expression electrodes.
At first, from the explanation of substrate (not shown) side, the 3rd semiconductor clad 61 is the 3rd InPn shape clads of n type, the first semiconductor clad 62 is band gap InGaAlAs clads littler than InP under low doping concentration, semiconductor sandwich layer 63 be with its structure be defined as photoelectric effect under the action optical wavelength effective action, be reduced to the be out of question semiconductor sandwich layer of degree of light absorption.If this device is the device of 1.5 microns frequency bands, the layer that then constitutes the Ga/Al composition that will change InGaAlAs becomes the multiple quantum trap structure of quantum well layer and barrier layer respectively.
The second semiconductor clad 64 is band gap two InGaAlAs clads littler than InP under low doping concentration, and, on this clad 64, the p type InP barrier layer (the 5th semiconductor clad) of configuration 65.
The 4th InP clad 66 is made of 3 zones, and optical modulation zone 66-1 is made of n type InP layer, and separated region 66-2 is p type InP zone, its bottom surface contact p type InP barrier layer 65.This p type InP zone 66-2 can pass through for example after the layer growth of the 3rd semiconductor clad 61 to the 4th semiconductor clads 66, utilize etching to remove the part that is equivalent to separated region 66-2, make p type InP regrowth, or utilize ion implantation to be subjected to main formation to the part importing Be of the layer of the 4th semiconductor clad 66.Connect waveguide passage region 66-3 no matter the conduction form how, is InP.
Electrode 67 and 68 is metal electrodes, with respect to an electrode 67, another electrode 68 as negative polarity, is applied voltage to sandwich layer 63.Metal electrode 68 is obtained electric the contact in optical modulation zone 66-1 and two zones of separated region 66-2.That uses under operating state applies under the voltage range, the layer of the first semiconductor clad, 62 to the 5th semiconductor clads 65 under the optical modulation zone all remove n type InP clad 66-1 and p type InP barrier layer 65 the interface part exhaust part, based on almost keep the n type to determine doping content neutrally.
In order to make device shown in Figure 6 as photoelectron waveguide, make light along under the state of the direction transmission vertical with the cross section of table top structure shown in Figure 6, to electrode 68 input electric signals, between the optical modulation zone 66-1 that constitutes by n type the 3rd InPn type clad 61 and n type InP, apply voltage.Here, InP barrier layer 65 is p types, as the potential barrier action of relative electronics, so suppress to inject from the electronics of optical modulation zone 66-1, under the few state of the generation of leakage current, apply voltage to sandwich layer 63, can carry out modulation based on photoelectric light phase.
Usually, when using photoelectron waveguide, must dispose the optical modulation zone that applies voltage, and connect waveguide passage region 66-3, between these zones of electrical separation in the light I/O side configuration in this optical modulation zone as photomodulator.In the structure of this embodiment, the part shown in the separated region 66-2 of Fig. 6 optionally is made as p type zone (p type InP zone), this zone constitutes the electrical separation zone.
The importing that is electrically connected on the p type InP zone 66-2 on the n type InP clad 66-1 has following effect.Promptly, in waveguide passway structure shown in Figure 3, as mentioned above, can cause the parasitic electric transistor effect in the hole of the light absorption generation of following sandwich layer 24, but in the structure of present embodiment, it is low that the current potential ratio of p type InP zone (separated region) 66-2 exhausts barrier layer 65, so p type InP zone (separated region) 66-2 is flow through in the hole, can suppress the accumulation in the hole in the barrier layer 65.
Embodiment 9
Fig. 7 is the oblique view of the embodiment 9 of explanation semiconductor photoelectron waveguide of the present invention.In the embodiment 8 of the invention described above, p type InP zone 66-2 is disposed at the both sides of optical modulation zone 66-1, but if the waveguide path is elongated, the hole that then light absorption produced can not effectively be absorbed by p type InP zone 66-2.In order to prevent the generation of this situation, shown in Figure 7 as the structure of the expression embodiment of the invention 9, as long as in the optical modulation zone p type InP zone of a plurality of 76-2 of configuration.
The same with the situation of embodiment 8, these regional 76-2 electrically contact n type InP zone 76-1.Here, if the longitudinal length of p type InP zone 76-2 is obtained weak point, then can be in the effect that keeps the hole to absorb, suppress the increase of the light absorption that the importing of p type layer causes as far as possible.In addition, electrode 78 is connected on each p type InP zone 76-2, these regional 76-2 become same potential, so bad influence can not caused to the transmission of electric signal in these zones.
In addition, the 71st, n type the 3rd semiconductor clad, the 72nd, be configured in the first semiconductor clad on the 3rd semiconductor clad 71, the 73rd, be configured on the first semiconductor clad 72, has photoelectric semiconductor sandwich layer, the 74th, be configured in the second semiconductor clad on the semiconductor sandwich layer 73, the 75th, be configured in p type the 5th semiconductor clad on the second semiconductor clad 74, the 76th, be configured in the 4th semiconductor clad on the 5th semiconductor clad 75,76-3 is the p type zone (separated region) of the 4th semiconductor clad, 76-4 is the connection waveguide passage region of the 4th semiconductor clad, the 77th, and n type electrode.
Embodiment 10
Fig. 8 is the oblique view of the embodiment 10 of explanation semiconductor photoelectron waveguide of the present invention, symbol 81 is n type the 3rd semiconductor clads among the figure, the 82nd, be configured in the first semiconductor clad on the 3rd semiconductor clad 81, the 83rd, be configured on the first semiconductor clad 82, has photoelectric semiconductor sandwich layer, the 84th, be configured in the second semiconductor clad on the semiconductor sandwich layer 83, the 85th, be configured in p type the 5th semiconductor clad on the second semiconductor clad 84, the 86th, be configured in the 4th semiconductor clad on the 5th semiconductor clad 85,86-1 is the n type zone (optical modulation zone) of the 4th semiconductor clad, 86-2 is the p type zone (separated region) of the 4th semiconductor clad, 86-3 is the connection waveguide passage region of the 4th semiconductor clad, 87, the 88th, n type electrode, the 89th, be formed at the electrode in the connection waveguide passage portion of the 4th semiconductor clad, the 90th, the connection waveguide passage portion of the 4th semiconductor clad is made as wiring with the 3rd clad same potential.
The semiconductor photoelectron waveguide of present embodiment 10 constitutes the p type InP zone 86-2 of clamping as the electrical separation zone, with the 4th clad (the being connected the waveguide passage portion) 86-3 of optical modulation zone 86-1 opposition side in form electrode 89 respectively, connecting wiring 90 between the electrode 87 on this electrode 89 and the 3rd semiconductor clad 81 is made as the current potential identical with the 3rd clad 81 with the current potential that connects waveguide region 86-3.
Utilize this formation, can get rid of under the not sufficiently high situation of impedance of electrical separation zone 86-2, improve the current potential in the outside, electrical separation zone, beyond main waveguide passage portion, apply the problem of bias voltage.Here, the conduction form of above-mentioned connection waveguide region is p, n, or is depletion layer.This is because in either case, and becomes clockwise biasing between the optical modulation zone, does not become the state that flows through electric current.
(other embodiment)
Make embodiment 9,10 combinations of the invention described above also effective.In addition, in the embodiment 8,9,10 of the invention described above, description is made as the example of material with InP and InAlGaAs, but the present invention also can be equally applicable to use in the photoelectron waveguide structure of other III-V compound semiconductor that comprises AlGaAs series or InGaAsP.Like this, embodiments of the invention be not limited to above-mentioned shown in, as long as in the scope described in the scope of claim, the simple combination of the change of the displacement of material etc., shape or number, well-known components or known technology etc. is contained in the embodiments of the invention.
In addition, the integrated gimmick that turns to semiconductor laser of semiconductor photoelectron waveguide of the present invention is identical technically with the known gimmick of integrated electric field absorpting form photomodulator and semiconductor laser, so do not mention.
Utilizability on the industry
The present invention relates to have the electric branch of the photoelectron waveguide that uses the heterogeneous structure of nin type The abscission zone domain construction, and be used for the semi-conductor photoelectronic of the Superhigh-speed Optical Modulator of long wavelength's frequency band The waveguide path provides a kind of semiconductor photoelectron waveguide, comes structure with former formation recess Become the electrical separation zone to compare, can not cause to the transmission of optical mode big impact, solve light loss The problem of losing, in addition controlled good, stably have the electrical separation regional structure. And, Semiconductor photoelectron waveguide of the present invention can be used for the Superhigh-speed Optical Modulator of long wavelength's frequency band In, can expect to exchange lay the grain network service etc. has big help.
Claims (6)
1, a kind of semiconductor photoelectron waveguide is characterized in that, has nin type heterojunction structure, can stably move photomodulator, and this semiconductor photoelectron waveguide possesses:
The second semiconductor clad is configured on each face of interarea with photoelectric semiconductor sandwich layer and another interarea;
Pn tie the layer, be configured on the described second semiconductor clad of an interarea side that is laminated in described semiconductor sandwich layer, the described second semiconductor clad side is the p type, with the described second semiconductor clad opposition side be the n type; With
The 3rd semiconductor clad is configured in described pn and ties on layer described second semiconductor clad of another interarea side that goes up and be laminated in described semiconductor sandwich layer, as n type electrode layer,
On each face of an interarea of described semiconductor sandwich layer and another interarea and between the described second semiconductor clad, dispose the first semiconductor clad,
The band gap of the described first semiconductor clad is bigger than the band gap of described semiconductor sandwich layer,
The band gap of described second semiconductor clad and described the 3rd semiconductor clad band gap than the described first semiconductor clad respectively is big.
2, semiconductor photoelectron waveguide according to claim 1 is characterized in that:
Described pn knot layer is set each layer thickness and impurity concentration, so that under the operating state of described semiconductor photoelectron waveguide, the whole zone of p layer exhausts, and on the other hand, n layer subregion at least exhausts.
3, semiconductor photoelectron waveguide according to claim 1 is characterized in that:
The p layer impurity concentration of described pn knot layer is 1 * 10
17Cm
-3More than, n layer impurity concentration is 5 * 10
17Cm
-3More than.
4, semiconductor photoelectron waveguide according to claim 1 is characterized in that:
In the n layer of described pn knot layer, except that n type impurity, also mixing forms the impurity of deep level.
5, semiconductor photoelectron waveguide according to claim 1 is characterized in that:
The n layer band gap energy of described pn knot layer is littler than the p layer band gap energy of this pn knot layer.
6, semiconductor photoelectron waveguide according to claim 4 is characterized in that:
The impurity that is doped in the deep level in the n layer of described pn knot layer is Fe.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP346287/2003 | 2003-10-03 | ||
| JP2003346285A JP2005116644A (en) | 2003-10-03 | 2003-10-03 | Semiconductor opto-electronic waveguide |
| JP346285/2003 | 2003-10-03 |
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| Publication Number | Publication Date |
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| CN1864092A CN1864092A (en) | 2006-11-15 |
| CN100430780C true CN100430780C (en) | 2008-11-05 |
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| JP4870518B2 (en) | 2006-10-24 | 2012-02-08 | Ｎｔｔエレクトロニクス株式会社 | Semiconductor optical modulator |
| JP5265929B2 (en) | 2008-01-10 | 2013-08-14 | Ｎｔｔエレクトロニクス株式会社 | Semiconductor optical modulator and optical modulator |
| JP5144306B2 (en) * | 2008-02-22 | 2013-02-13 | 日本電信電話株式会社 | Optical semiconductor device and manufacturing method thereof |
| JP5144608B2 (en) * | 2009-08-11 | 2013-02-13 | 日本電信電話株式会社 | Light modulator |
| JP5831165B2 (en) * | 2011-11-21 | 2015-12-09 | 富士通株式会社 | Semiconductor optical device |
| CN102520531B (en) * | 2011-12-16 | 2014-07-02 | 清华大学 | N-i-n type electro-optic modulator |
| JP6213222B2 (en) * | 2013-12-24 | 2017-10-18 | 富士通株式会社 | Optical semiconductor device and manufacturing method thereof |
| US10193308B2 (en) * | 2017-06-19 | 2019-01-29 | Intel Corporation | Semiconductor laser with tensile strained InAlAs electron blocker for 1310 nanometer high temperature operation |
| US10962811B2 (en) * | 2018-12-06 | 2021-03-30 | Sifotonics Technologies Co., Ltd. | Monolithic electro-optical modulator with comb-shaped transmission line |
| CN116417905B (en) * | 2023-06-08 | 2023-08-18 | 深圳市星汉激光科技股份有限公司 | Structure of laser with PN junction non-injection layer and preparation method thereof |
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|---|---|---|---|---|
| JPH03231220A (en) * | 1990-02-07 | 1991-10-15 | Nippon Telegr & Teleph Corp <Ntt> | Optical semiconductor device |
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| CN1864092A (en) | 2006-11-15 |
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