CN108490650B - Periodic staggered waveguide structure, electro-optical modulation structure and MZI structure - Google Patents

Periodic staggered waveguide structure, electro-optical modulation structure and MZI structure Download PDF

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CN108490650B
CN108490650B CN201810314033.1A CN201810314033A CN108490650B CN 108490650 B CN108490650 B CN 108490650B CN 201810314033 A CN201810314033 A CN 201810314033A CN 108490650 B CN108490650 B CN 108490650B
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waveguide
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CN108490650A (en
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匡迎新
李智勇
刘阳
刘磊
李泽正
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Institute of Semiconductors of CAS
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
    • G02F1/035—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect in an optical waveguide structure
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/21—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  by interference
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/21—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  by interference
    • G02F1/212—Mach-Zehnder type

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Abstract

The invention provides a periodic staggered waveguide structure, an electro-optic modulation structure and an MZI structure using the periodic staggered waveguide structure, wherein the periodic staggered waveguide structure is in a ridge shape, strip-shaped inserted finger-shaped n-type Si doped regions are formed in the center of the ridge-shaped waveguide along the extension direction of the waveguide, p-type SiGe doped regions are formed between the inserted fingers, the n-type Si doped regions and the p-type SiGe doped regions are arranged in a periodic staggered mode, the n-type Si doped regions are connected with one sides of the inserted fingers and the bottom of the center of the ridge-shaped waveguide, gaps are formed between the bottoms of the inserted fingers of the n-type Si doped regions and the upper surface of the n-type Si doped regions connected with the bottom of the center of the ridge-shaped waveguide, and the p-type SiGe doped regions are arranged in the gaps so as to connect the p-type SiGe doped regions formed between the. Therefore, the effective mass of the SiGe material carrier is reduced, the free carrier plasma dispersion effect is enhanced, the refractive index change of the SiGe material is increased, the modulation efficiency, the modulation speed and the modulation power consumption are optimized, and the effect that the size is reduced and the modulation performance is improved is obtained.

Description

Periodic staggered waveguide structure, electro-optical modulation structure and MZI structure
Technical Field
The invention belongs to the field of silicon-based optoelectronic devices, and particularly relates to a periodic staggered waveguide structure, an electro-optic modulation structure and a Mach-Zehnder Interference (MZI) structure using the same, in particular to a periodic staggered waveguide structure which can improve the refractive index change of a material based on a plasma dispersion effect so as to increase the modulation efficiency, improve the working speed of a device and reduce the power consumption of the device, and an electro-optic modulation structure and an MZI structure using the same.
Background
The information age is rapidly developing, and a device which is an important component of a communication system transmitting end in the optical communication technology belongs to an optical modulator. In general, optical sub-assemblies for implementing functions of transmitting, generating, processing and detecting optical signals mainly include optical waveguides, lasers, modulators and detectors, which are key components in inter-chip and on-chip optical interconnection systems. Moreover, silicon-based optoelectronic devices are rapidly advancing in order to improve the performance of these key components, thereby opening new stages of development. Among them, silicon-based electro-optical modulators gradually improve their key performance, such as high speed, low power consumption, and small size, and thus are receiving wide attention.
In general, silicon-based modulators may be divided into at least an electrical modulation structure and an optical modulation structure. On one hand, the electrical modulation structure mainly comprises a carrier injection structure, a carrier depletion structure, an MOS (metal oxide semiconductor) capacitor structure and the like, wherein the silicon-based electro-optic modulator serving as a forward bias pin structure of the carrier injection structure realizes the refractive index change of a waveguide material by injecting free carriers into an intrinsic region serving as a waveguide, and although the modulation efficiency is high, the modulation speed is as low as MHz level because the recombination time of minority carriers is longer; the silicon-based electro-optical modulator with the reverse bias pn junction structure as the carrier depletion structure utilizes drift motion of multiple carriers, changes of carrier concentration are achieved by changing the width of a depletion region, and further changes the refractive index of a material, and the modulation speed is high and can reach dozens of GHz due to the fact that the change of the carrier concentration is caused by the drift motion of the carriers, however, the change of the refractive index caused by the carrier depletion effect is small, the overlapping region of an optical field and an electric field is small, and the modulation efficiency cannot be high. On the other hand, the optical modulation structure mainly includes a mach-zehnder interference (MZI) structure, a micro-ring resonance (MRR) structure, and the like, wherein the MZI structure implements intensity modulation through phase modulation, a phase shift arm thereof modulates the phase of light transmitted in a phase shift arm waveguide, and a device structure with a larger size is required to achieve pi phase modulation; the MRR structure makes the waveguide into a micro-ring with a micron-sized radius so that the light waves transmitted in the micro-ring, i.e., the micro-ring, will resonate, and the device based on the MRR structure is sensitive to the process and the external environment temperature and has a small optical bandwidth. It can be seen that each of these electrical and optical modulation structures has advantages and disadvantages, respectively, and a structural compromise is required to obtain the desired device performance, and the electro-optic modulator is formed by combining the electrical and optical modulation structures.
At present, in the traditional silicon-based electro-optical modulator, the electro-optical modulator with two comb fingers and the like which have higher working speed and efficiency of devices and the like and reversely biased pn junction waveguide is provided, but because of silicon materialThe plasma dispersion effect is weak (the change of the carrier concentration is 1 multiplied by 10)17～1×1018cm-3The change in refractive index in the case of (2) is 1X 10-4～3×10-3) For example, in a conventional silicon-based MZI type electro-optic modulator, to achieve pi phase modulation also requires a higher modulation voltage for the phase-shifting arm (also called modulation arm), so that it is difficult to further improve the performance of the modulation device. That is, the free carrier plasma dispersion effect in the silicon material is limited in the physical effect of optical modulation, which requires the consideration of materials such as silicide, germanium, organic polymer, etc., and must be compatible with the design principle and process method in the microelectronic integration technology.
Disclosure of Invention
Technical problem to be solved
The present invention provides a periodic staggered waveguide structure, and an electro-optic modulation structure and an MZI structure using the same, to at least partially solve the technical problems set forth above.
(II) technical scheme
According to an aspect of the present invention, there is provided a periodically staggered waveguide structure, which is ridge-shaped, comprising: a strip-shaped inserted finger-shaped Si doped region formed in the center of the ridge waveguide along the extension direction of the waveguide; and a SiGe doped region formed between the fingers; the Si doped regions and the SiGe doped regions are arranged in a periodically staggered mode, the Si doped regions are connected to one sides of the insertion fingers and are connected with the bottom of the center of the ridge waveguide, a gap is formed between the bottom of the insertion fingers of the Si doped regions and the upper surface of the Si doped regions connected to the bottom of the center of the ridge waveguide, and the SiGe doped regions are arranged in the gap to enable the SiGe doped regions formed between the insertion fingers to be connected.
In the periodic staggered waveguide structure, a Si doped region is an n-type Si doped region, and a SiGe doped region is a p-type SiGe doped region; the doping concentration of the n-type Si doped region is 1 multiplied by 1017cm-3～1×1018cm-3The doping concentration of the p-type SiGe doped region is 1 × 1017cm-3～1×1018cm-3。
In the periodic staggered waveguide structure, the p-type SiGe doped region can be replaced by an intrinsic semiconductor material or an electro-optic material, and the intrinsic semiconductor material can be SiGe or Ge.
According to another aspect of the invention, an electro-optic modulation structure of a periodically staggered waveguide structure is provided. The electro-optic modulation structure of the periodic staggered waveguide structure comprises: an SOI silicon substrate; SiO 22A buried oxide layer formed on the SOI silicon substrate; a silicon layer epitaxially grown on SiO2A buried oxide layer comprising: the Si doped region is formed in the middle of the silicon layer and is in a strip-shaped inserted finger shape; SiGe doped regions formed between the fingers of the Si doped regions; the Si doped regions and the SiGe doped regions are arranged in a periodically staggered manner to form a ridge-type periodically staggered waveguide structure, the Si doped regions are connected at one sides of the insertion fingers and are connected with the bottom of the center of the ridge-type waveguide, a gap is formed between the bottom of the insertion fingers of the Si doped regions and the upper surface of the Si doped regions connected with the bottom of the center of the ridge-type waveguide, and the SiGe doped regions are arranged in the gap to connect the SiGe doped regions formed between the insertion fingers; the first Si contact region and the second Si contact region are respectively formed on two sides of the flat plate region of the ridge type periodic staggered waveguide structure; first and second electrodes formed on the first and second Si contact regions, respectively; the first electrode is electrically connected with the Si doped region through the first Si contact region, and the second electrode is electrically connected with the SiGe doped region through the second Si contact region.
In the electro-optic modulation structure of the periodic staggered waveguide structure, a Si doped region is an n-type Si doped region, and a SiGe doped region is a p-type SiGe doped region; the doping concentration of the n-type Si doped region is 1 multiplied by 1017cm-3～1×1018cm-3The doping concentration of the p-type SiGe doped region is 1 × 1017cm-3～1×1018cm-3The doping concentration of the n + -type doped first Si contact region and the p + -type doped second Si contact region is 1 × 1019cm-3～1×1020cm-3(ii) a The thickness of the SiGe doped region in the direction perpendicular to the extension direction of the waveguide is 30-150 nm.
According to another aspect of the present invention, an MZI structure is provided. The MZI structure comprises: an input waveguide; a beam splitter connected to the input waveguide, and two modulation arms for modulating the phase of light from the beam splitter by using the electro-optical modulation structure of the periodically staggered waveguide structure; a beam combiner connected to the two modulation arms and configured to interfere the light having the phase difference from the two modulation arms; and an output waveguide connected to the beam combiner and outputting the light intensity-modulated by interference from the beam combiner.
(III) advantageous effects
From the technical scheme, the periodic staggered waveguide structure, the electro-optic modulation structure and the MZI structure using the periodic staggered waveguide structure have at least one or part of the following beneficial effects:
(1) the SiGe material is introduced into the waveguide, the effective mass of carriers is reduced, the free carrier plasma dispersion effect is enhanced, so that the refractive index change of the SiGe material is increased, and the modulation of the waveguide structure on the refractive index is effectively realized. Thus, performance parameters of modulation (modulation speed, modulation efficiency, modulation power consumption) are optimized, and an effect of being reduced in size and excellent in modulation function is obtained.
(2) Reverse bias voltage is applied to a pn junction formed by the n-type Si doped region and the p-type SiGe doped region, the carrier concentration near the depletion region changes, and due to the periodic arrangement of the pn junction, the interaction between an optical field and the carrier concentration change is increased, so that the modulation efficiency is further increased, the size of the device is reduced, the working rate of the device is improved, and the power consumption of the device is reduced.
(3) The MZI structure utilizes an electro-optic modulation structure of a periodic staggered waveguide structure to modulate the phase of light in a modulation arm, and then utilizes a beam combiner to realize the interference of the light based on the phase difference generated by the modulation arm, so that the phase change of the light is further converted into the intensity change of the light effectively, and the modulation of the light is realized.
Drawings
Fig. 1 is a schematic perspective view of an electro-optic modulation structure of a periodically staggered waveguide structure according to an embodiment of the present invention.
Fig. 2 is a schematic top view of an electro-optic modulation structure of a periodically staggered waveguide structure according to an embodiment of the invention.
Fig. 3 is a schematic cross-sectional view perpendicular to the propagation direction of the optical field of the electro-optic modulation structure of the periodically staggered waveguide structure according to the embodiment of the present invention.
Fig. 4 is a schematic top view of an MZI structure of an electro-optic modulation structure using a periodically staggered waveguide structure according to an embodiment of the present invention.
[ description of main reference symbols of embodiments of the invention ] in the drawings
101-intrinsic Si substrate; 102-SiO2An oxygen burying layer; 103-a first Si contact region;
104-a second Si contact region; 105-a first electrode; 106-a second electrode;
a 107-Si doped region; 108-a non-Si material region;
an a-3dB beam splitter; a' -3dB beam combiner; b-a modulation arm;
c-an input waveguide; c' -output waveguides.
Detailed Description
The applicant of the present invention finds, through a keen study, that the effective mass of carriers of the SiGe material is smaller than that of the Si material, and the adjustment of the material band gap and the change of other parameters can be realized through the technologies such as strain engineering, so that the plasma dispersion effect in the SiGe or Ge/SiGe quantum well can be effectively enhanced, and the manufacturing process is compatible with the conventional CMOS process. On the basis, a novel reasonable waveguide structure for introducing SiGe material into silicon-based SOI material is designed.
Therefore, the invention provides a novel periodic staggered waveguide structure as a reasonable waveguide structure based on Si/SiGe material, and an electro-optic modulation structure and an MZI structure using the same, wherein Si doped regions and SiGe doped regions are periodically and alternately arranged in the periodic staggered waveguide structure, the effective mass of carriers of the SiGe material is reduced, the plasma dispersion effect of free carriers of the SiGe material is enhanced, and the refractive index of the SiGe material is changed to realize the modulation of the waveguide structure on the refractive index. Thus, performance parameters of modulation (modulation efficiency, modulation speed, modulation power consumption) are optimized, and an effect of being reduced in size and excellent in modulation function is obtained.
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to specific embodiments and the accompanying drawings.
In a specific embodiment of the present invention, an electro-optic modulation structure of a periodically staggered waveguide structure is provided. In this embodiment, an SOI substrate is used.
Fig. 1 is a schematic perspective view of an electro-optic modulation structure of a periodically staggered waveguide structure according to an embodiment of the present invention. Fig. 2 is a schematic top view of an electro-optic modulation structure of a periodically staggered waveguide structure according to an embodiment of the invention. Fig. 3 is a schematic cross-sectional view perpendicular to the propagation direction of the optical field of the electro-optic modulation structure of the periodically staggered waveguide structure according to the embodiment of the present invention. Referring to fig. 1, 2 and 3, an electro-optical modulation structure of a periodically staggered waveguide structure according to an embodiment of the present invention includes:
as shown in fig. 1, an intrinsic Si substrate 101; SiO disposed over intrinsic Si substrate 1012A buried oxide layer 102; is arranged on SiO2The Si doped regions 107 and the non-Si material regions 108 are arranged above the central region of the buried oxide layer 102, and the Si doped regions 107 and the non-Si material regions 108 are arranged in a periodically staggered mode in the optical field propagation direction; is arranged on SiO2A first Si contact region 103 and a second Si contact region 104 on both side ends of the buried layer; a first electrode 105 disposed on the first Si contact region 103; a second electrode 106 disposed on the second Si contact region 104.
Specifically, as shown in fig. 2 and 3, the electro-optical modulation structure of the periodically staggered waveguide structure includes: an intrinsic Si substrate 101; SiO 22A buried oxide layer 102 formed on the intrinsic Si substrate 101; a silicon layer epitaxially grown on SiO2A buried oxide layer 102, wherein the silicon layer is etched to form a ridge waveguide structure, a strip-shaped inter-finger structure is formed in the middle of the silicon layer and then doped to form a Si doped region 107, SiGe material is grown between the inter-fingers of the silicon strip-shaped inter-finger structure and then doped to form a SiGe doped region (i.e. a non-Si material region 108, sometimes referred to as a "SiGe doped region 108"), the Si doped region 107 and the SiGe doped region 108 are arranged in a staggered manner in the waveguide extension direction to form a periodic staggered waveguide structure, and the silicon layers on both sides of the ridge waveguide are doped to form an n + doped region 103 (also referred to as a first Si contact region 103) and a p + doped region 104 (also referred to as a first Si contact region 103) and a p +Second Si contact region 104); a first electrode 105 and a second electrode 106 formed above the first Si contact region 103 and the second Si contact region 104, respectively.
As shown in fig. 2 and 3, specifically, in a plan view, in the waveguide extending direction, the insertion-finger-shaped Si doped regions 107 and the SiGe doped regions 108 formed between the insertion fingers are alternately arranged to form a periodic staggered waveguide structure; in a cross-sectional view perpendicular to the propagation direction of the optical field, the periodically staggered waveguide structure composed of the Si doped region 107 and the SiGe doped region 108 is a ridge waveguide structure.
It should be noted that, in the case of a cross-sectional view of the SiGe doped regions 108 across the inter-finger gap perpendicular to the optical field propagation direction, the Si doped region 107 in the ridge type periodically staggered waveguide structure occupies a part of the ridge type sectional shape, as shown in fig. 3, considering the role of SiGe material in the waveguide structure and the interaction between the carrier distribution and the optical field, in the central upper portion of the ridge waveguide, the Si doped region 107 is only under one-half of the cross-sectional area of the upper portion, but in the lower central portion of the ridge waveguide, the Si doped region 107 almost fills the lower cross-sectional area, while the other part of the lower cross-sectional area without the Si doped region 107 is occupied by a SiGe doped region 108 formed extending downward from the SiGe doped region 108 formed at the upper part and extending outward along the inside of the top of the slab region of the ridge waveguide bordering on the SiGe doped region 108, the SiGe doped region 108 extending downward to a thickness less than half of the thickness of the lower part. In addition, the SiGe doped regions 108 adjacent to both ends of the ridge-type periodically staggered waveguide structure perpendicular to the propagation direction of the optical field extend outward at the lower portion and are connected to the second Si contact region 104 (refer to the solid lines in the SiGe doped regions 108 of fig. 2).
Thus, in the ridge-type periodic staggered waveguide structure, the Si doped region 107 is an n-type Si doped region with a higher doping concentration, the SiGe doped region 108 is a p-type SiGe doped region with a lower doping concentration, a positive voltage is applied to the first electrode 105 and a negative voltage is applied to the second electrode 106, substantially a positive voltage is applied to the n-type Si doped region 107 connected to the first electrode 105 via the first Si contact region 103, and a negative voltage is applied to the p-type SiGe doped region 108 connected to the second electrode 106 via the second Si contact region 104, so that a reverse bias voltage is applied to a lateral pn junction formed by the n-type Si doped region 107 and the p-type SiGe doped region 108, whereby the pn junction is in a depletion mode in which the depletion region expands mainly toward the p-type SiGe doped region 108 with a lower doping concentration, and carrier concentrations in and in the vicinity of the depletion region change, since the optical field is distributed mainly in the center of the ridge-type waveguide, the change of the carrier concentration changes the refractive index of the material, and further changes the effective refractive index of the optical field mode, and since the depletion region exists in both the vertical direction and the horizontal direction, the region with the changed carrier concentration is increased in the p-type SiGe doped region 108, that is, the hole carrier concentration change region of the p-type SiGe doped region 108 is increased, so that the interaction between the optical field and the carrier concentration change region is enhanced. Since the pn junctions formed by the Si doped regions and the SiGe doped regions are periodically staggered, the interaction between the change of the carrier concentration and the optical field caused by the reverse bias of the pn junctions is further enhanced. Meanwhile, the effective mass of the carrier of the SiGe material is reduced compared with that of the Si material, so that the plasma dispersion effect of the free carrier is enhanced, and the modulation of the waveguide structure on the refractive index can be enhanced. These factors act together, and then reach the purpose that increases modulation efficiency, reduces device size, improves device operating rate, reduces device power consumption.
It should be noted that the doping concentration of the Si doping region 107 is 1 × 1017cm-3～1×1018cm-3The Si doped region 107 is an n-type Si doped region; the doping concentration of the SiGe doped region 108 is 1 × 1017cm-3～1×1018cm-3The SiGe doped region 108 is a p-type SiGe doped region; the doping concentration of the first 103 and second 104 Si contact regions is 1 x 1019cm-3～1×1020cm-3The first Si contact region 103 is an n + -type first Si contact region, and the second Si contact region 104 is a p + -type second contact region; the thickness of the SiGe doped region 108 is 30-150 nm.
So far, the introduction of the electro-optical modulation structure of the periodically staggered waveguide structure is finished.
In another embodiment of the present invention, there is provided an MZI structure of an electro-optical modulation structure using the above periodic staggered waveguide structure. Fig. 4 is a schematic top view of an MZI structure of an electro-optic modulation structure using a periodically staggered waveguide structure according to an embodiment of the present invention. As shown in fig. 4, the MZI structure includes: the waveguide-based optical fiber modulator comprises an input waveguide c, an output waveguide c ', a 3dB beam splitter a, a 3dB beam combiner a' and two modulation arms b, wherein the modulation arms b use the periodic staggered waveguide structure of the embodiment of the application. Specifically, an externally input optical signal (input signal) is input through an input waveguide c, is split by a 3dB beam splitter a through an input port of a 3dB beam splitter a connected to the input waveguide c and then enters two modulation walls b, the modulation arms b realize the change of the refractive index of the material in the waveguide structure, further changes the phase of the light transmitted in the waveguide structure, and then enters a 3dB beam combiner a ' from two input ports of a 3dB beam combiner a ' connected to the two modulation arms b, the two optical signals with the phase difference interfere with each other through the 3dB beam combiner a ', and are output from an output port of the 3dB beam combiner a ' through a port of an output waveguide c '. As shown in fig. 4, the MZI structure changes the phase of the transmitted light by changing the reverse bias voltage applied to the modulation arms b, and then the beam combiner is used to realize the interference of the light whose phase is changed by the two modulation arms b, thereby finally realizing the intensity modulation of the light. Thus, the phase change of light can be effectively converted into the intensity change of light by the MZI structure, and the modulation of light is realized.
For the purpose of brevity, any technical features that can be used in the same embodiment are described in the above description, and the same description need not be repeated.
Thus, another embodiment of the present invention has been described.
So far, the embodiments of the present invention have been described in detail with reference to the accompanying drawings. It is to be noted that, in the attached drawings or in the description, the implementation modes not shown or described are all the modes known by the ordinary skilled person in the field of technology, and are not described in detail. Furthermore, the above definitions of the various elements and methods are not limited to the particular structures, shapes or arrangements of parts mentioned in the examples, which may be easily modified or substituted by one of ordinary skill in the art, for example:
(1) the non-Si material region 108 may be made of a material selected differently depending on the performance achieved by the voltage applied between the electrodes, and may be made of an intrinsic semiconductor material such as intrinsic SiGe or Ge when carrier depletion is performed by the applied voltage, or an electro-optic material when a horizontal electric field is generated by the applied voltage, in addition to the above-described doped SiGe material when carrier depletion is performed by the applied voltage;
(2) the material of the non-Si material area can adopt a strained semiconductor material, and the thickness of the strained semiconductor material is less than the critical thickness of the material growth; the material of the non-Si material area can also adopt a bulk semiconductor material, and the thickness of the bulk semiconductor material is greater than the critical thickness of the material growth;
from the above description, those skilled in the art should clearly recognize the periodically staggered waveguide structure of the present invention, and the electro-optical modulator and MZI structure using the same.
In summary, the present invention provides a periodic staggered waveguide structure in which the effective mass of the material carriers is reduced to enhance the plasma dispersion effect of the carriers, an electro-optic modulation structure in which the carrier concentration variation region is increased by a reverse bias voltage to change the refractive index of the material, and an MZI structure in which the phase modulation of light is changed to intensity modulation, and thus the present invention can be widely applied to various fields such as active high-speed electro-optic modulation, light emitting modules, and on-chip optical integration.
It should also be noted that the directional terms, such as "upper", "lower", etc., used in the embodiments are only directions referring to the drawings, and are not intended to limit the scope of the present invention. Throughout the drawings, like elements are represented by like or similar reference numerals. Conventional structures or constructions will be omitted when they may obscure the understanding of the present invention.
And the shapes and sizes of the respective components in the drawings do not reflect actual sizes and proportions, but merely illustrate contents of the embodiments of the present invention.
Unless otherwise indicated, the numerical parameters set forth in the specification and attached claims are approximations that can vary depending upon the desired properties sought to be obtained by the present invention. In particular, all numbers expressing quantities of ingredients, reaction conditions, and so forth used in the specification and claims are to be understood as being modified in all instances by the term "about". Generally, the expression is meant to encompass variations of ± 10% in some embodiments, 5% in some embodiments, 1% in some embodiments, 0.5% in some embodiments by the specified amount.
Furthermore, the word "comprising" does not exclude the presence of elements or steps not listed in a claim.
The use of ordinal numbers such as "first," "second," etc., in the specification and claims to modify a corresponding element does not by itself connote any ordinal number of the element or any ordering of one element from another element or method of manufacture, and the use of the ordinal numbers is only used to distinguish one element having a certain name from another element having a same name.
The above-mentioned embodiments are intended to illustrate the objects, technical solutions and advantages of the present invention in further detail, and it should be understood that the above-mentioned embodiments are only exemplary embodiments of the present invention, and are not intended to limit the present invention, and any modifications, equivalents, improvements and the like made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims (10)

1. A periodically staggered waveguide structure, in the form of a ridge, comprising:
a strip-shaped inserted finger-shaped Si doped region formed in the center of the ridge waveguide along the extension direction of the waveguide; and
a SiGe doped region formed between the fingers;
wherein the Si doped regions and the SiGe doped regions are periodically staggered,
the Si doped region is connected with one side of the insertion finger and the bottom of the center of the ridge waveguide, a gap is arranged between the bottom of the insertion finger of the Si doped region and the upper surface of the Si doped region connected with the bottom of the center of the ridge waveguide, and the SiGe doped region is arranged in the gap to connect the SiGe doped regions formed between the insertion fingers.
2. The periodically staggered waveguide structure of claim 1,
the Si doped region is an n-type Si doped region, and the SiGe doped region is a p-type SiGe doped region.
3. The periodically staggered waveguide structure of claim 2,
the doping concentration of the n-type Si doped region is 1 multiplied by 1017cm-3～1×1018cm-3The doping concentration of the p-type SiGe doping region is 1 multiplied by 1017cm-3～1×1018cm-3。
4. The periodically staggered waveguide structure of claim 2,
the p-type SiGe doped region can be replaced with an intrinsic semiconductor material or an electro-optic material.
5. The periodically staggered waveguide structure of claim 4,
the intrinsic semiconductor material is SiGe or Ge.
6. An electro-optic modulation structure of a periodically staggered waveguide structure, comprising:
an SOI silicon substrate;
SiO2a buried oxide layer formed on the SOI silicon substrate;
a silicon layer epitaxially grown on the SiO2A buried oxide layer comprising:
the Si doped region is formed in the middle of the silicon layer and is in a strip-shaped inserted finger shape;
a SiGe doped region formed between the fingers of the Si doped region;
the Si doped regions and the SiGe doped regions are arranged in a periodically staggered manner to form a ridge-type periodically staggered waveguide structure, the Si doped regions are connected at one sides of the insertion fingers and connected with the center bottom of the ridge-type waveguide, a gap is formed between the bottom of the insertion fingers of the Si doped regions and the upper surface of the Si doped regions connected with the center bottom of the ridge-type waveguide, and the SiGe doped regions are arranged in the gap to connect the SiGe doped regions formed between the insertion fingers;
a first Si contact region and a second Si contact region respectively formed on both sides of the slab region of the ridge-type periodic staggered waveguide structure;
first and second electrodes formed over the first and second Si contact regions, respectively;
the first electrode is electrically connected with the Si doped region through the first Si contact region, and the second electrode is electrically connected with the SiGe doped region through the second Si contact region.
7. The electro-optic modulation structure of a periodically interleaved waveguide structure of claim 6,
the Si doped region is an n-type Si doped region, and the SiGe doped region is a p-type SiGe doped region.
8. The electro-optic modulation structure of a periodically staggered waveguide structure of claim 7,
the doping concentration of the n-type Si doped region is 1 multiplied by 1017cm-3～1×1018cm-3The doping concentration of the p-type SiGe doping region is 1 multiplied by 1017cm-3～1×1018cm-3The doping concentration of the first Si contact region and the second Si contact region is 1 x 1019cm-3～1×1020cm-3。
9. The electro-optic modulation structure of a periodically staggered waveguide structure of claim 7,
the thickness of the SiGe doped region in the direction vertical to the extension direction of the waveguide is 30-150 nm.
10. An MZI structure comprising:
an input waveguide;
a beam splitter connected to the input waveguide,
two modulation arms for modulating the phase of light from the beam splitter using the electro-optic modulation structure of the periodically interleaved waveguide structure of any of claims 6 to 9;
a beam combiner connected to the two modulation arms and configured to interfere the light having the phase difference from the two modulation arms;
and an output waveguide connected to the beam combiner and outputting the light intensity-modulated by interference from the beam combiner.
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