KR101453473B1 - Electro-Optic Modulating Device - Google Patents
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- KR101453473B1 KR101453473B1 KR1020100066675A KR20100066675A KR101453473B1 KR 101453473 B1 KR101453473 B1 KR 101453473B1 KR 1020100066675 A KR1020100066675 A KR 1020100066675A KR 20100066675 A KR20100066675 A KR 20100066675A KR 101453473 B1 KR101453473 B1 KR 101453473B1
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Abstract
An electro-optic modulation element is provided. The device has an optical waveguide in which a vertical structure having at least two sidewalls is formed, the sidewalls of the vertical structure being used to construct the junction.
Description
The present invention relates to a photonic device, and more particularly to an electro-optic modulation device.
The present invention is derived from a research carried out as part of the IT-originated technology development project of the Ministry of Knowledge Economy [assignment number: 2006-S-004-04, title: Silicon-based high-speed optical interconnection IC].
Silicon photonics technology is becoming increasingly important as an alternative technology to solve severe thermal problems inside increasingly emerging computing devices and bottlenecks in data communication between semiconductor chips. Over the past few years, there has been a major advance in silicon photonics technology. For example, fast silicon optical modulators, Si-Ge photo-detectors, silicon Raman lasers, silicon optical amplifiers, silicon wavelength converters silicon wavelength converters and hybrid silicon lasers have been developed. Nevertheless, until recently, the fastest data transfer rate, implemented using a silicon modulator, was approximately 10 Gb / s. In order to meet the increase in bandwidth required in next generation communication networks and future high performance computing devices, it is necessary to realize much faster modulation and data transmission characteristics.
Commercialized high-speed optical modulators are mostly based on electro-optic materials such as lithium niobate and III-V semiconductors and provide modulation characteristics of approximately 40 Gb / s (much faster than 10 Gb / s) It is known. On the other hand, since monocrystalline silicon is a material that does not have a linear electro-optical characteristic (i.e., a Pockels effect) but exhibits a very weak Franz-Keldysh effect, Implementing the properties was difficult.
Although it has recently been known that strained silicon exhibits the above-described Foquel effect, the measured electro-optic coefficient is much smaller than LiNbO 3 . It is also known that strained Ge / SiGe quantum well structures have relatively high electro-optic absorption properties by the Quantum Confined Stark effect Although known, there are still a number of technical issues (eg, strain engineering) that need to be addressed to implement this.
To date, fast modulation in silicon can only be realized through the free carrier plasma dispersion effect. In silicon, the change in free charge density results in a change in the refractive index of the material, and thus the modulation rate of the silicon modulator based on the free charge plasma dispersion effect is determined by how fast free charges can be injected or removed. The proposed device configuration for implementing phase modulation in silicon is largely divided into a forward biased pin diode, a MOS capacitor and a reverse bias pn junction biased pn junctions).
It has been demonstrated that the forward-bias pieze diode approach, illustratively disclosed in U.S. Patent No. 5,908,305, can provide high modulation efficiency. However, because of the slow charge generation process and the slow recombination process, the pure-bias piezane diode approach has a limitation on the modulation rate as long as it can not significantly reduce the charge life.
Both the MOS capacitor and the reverse-bias Pn junction are based on electric field induced majority carrier dynamics, which potentially can achieve 10 Gb / s or more. However, due to the low modulation efficiency, these schemes require long length phase-modulators. In addition, in the case of the reverse-bias pn junction method disclosed in U.S. Patent Publication No. 2006/0008223, there is a technical problem that the entire optical waveguide for the phase-modulation is doped to a considerably high degree, resulting in a large optical wave loss.
One of the problems to be solved by the present invention is to provide a high-performance electro-optic modulation device that provides high speed, high modulation efficiency, small size, low power consumption and low luminance wave loss characteristics.
An electro-optic modulation element is provided that includes a locally doped region in the optical waveguide. The device has an optical waveguide formed with a vertical structure having at least two side walls, and the side walls of the vertical structure are used to form a junction.
According to an embodiment, the thickness of the optical waveguide may be smaller than the sum of the lengths of the side walls of the vertical structure projected on a plane perpendicular to the traveling direction of the optical waveguide.
According to one embodiment, the optical waveguide includes a first slab portion, a second slab portion, and a rib portion interposed between the first and second slab portions And the vertical structure is formed in the lip portion.
According to one embodiment, the optical waveguide includes a first body region extending from the first slab portion and contacting one side wall of the vertical structure, and a second body region extending from the second slab portion and contacting the other side wall of the vertical structure, Region. ≪ / RTI > The first and second body regions may be of a first conductivity type and the vertical structure may include at least one vertical doped region having a second conductivity type different from the first conductivity type.
According to one embodiment, the first and second body regions and the vertical structure constitute a pair of PN junctions, wherein a vertical length of the vertical structure is greater than a thickness of the first slab portion And is less than half of the sum of the lengths of the p-junctions projected on a plane perpendicular to the traveling direction of the optical waveguide.
According to an embodiment, the semiconductor device may further include a first wiring structure electrically connecting the vertical doped region and the first circuit, and a second wiring structure electrically connecting the slab portion and the second circuit. The first and second circuits may be configured to generate a potential difference for reverse-biasing operation of the pn junctions.
According to one embodiment, the first slab portion may include a first doped region of a first conductivity type, and the second slab portion may include a second doped region of the first conductivity type. In addition, the optical waveguide includes a first body region extending from the first doped region and in contact with a side wall of the vertical structure, and a second body region extending from the second doped region and contacting the other side wall of the vertical structure can do. The first and second body regions may be formed of an intrinsic semiconductor and the vertical structure may include at least one vertical doped region having a second conductivity type different from the first conductivity type.
According to one embodiment, the first doped region, the first body region, and the vertical structure form a PIN-junction, and the second doped region, the second body region, The pi-ene junction can be constructed.
According to an embodiment, the semiconductor device may further include a first wiring structure electrically connecting the vertical doped region and the first circuit, and a second wiring structure electrically connecting the slab portion and the second circuit. The first and second circuits may be configured to generate a potential difference for net-bias operation of the piezane junctions.
According to one embodiment, the thicknesses of the first and second doped regions may be substantially equal to the thicknesses of the first and second slab portions, respectively.
According to one embodiment, the vertical structure may include a plurality of vertical doped regions and at least one inner region interposed between the vertical doped regions.
According to one embodiment, the at least one inner region includes an inner doped region having a conductivity type different from that of the vertical doped regions, thereby forming a PN junction with the vertical doped regions.
According to an embodiment, the at least one inner region includes a pair of intrinsic regions and an inner doped region interposed between the intrinsic regions and having a conductivity type different from that of the vertical doped regions, And at least two pi-junctions (PIN-junctions).
According to one embodiment, the first slab portion includes a first doped region of a first conductivity type, and the second slab portion includes a second doped region of the first conductivity type, The first and second doped regions may be electrically connected to circuits generating different voltages.
According to one embodiment, the first slab portion includes a first doped region of a first conductivity type, and the second slab portion includes a second doped region of the first conductivity type, The first and second doped regions may be electrically connected to each other to be in an equipotential state.
According to one embodiment, the first slab portion includes a first doped region of a first conductivity type, and the second slab portion includes a second doped region of a second conductivity type different from the first conductivity type . In this case, the vertical structure may include a first vertical doping region having the second conductivity type and formed adjacent to the first slab portion, and a second vertical doping region having the first conductivity type and being formed adjacent to the second slab portion 2 vertical doped regions.
According to one embodiment, the optical waveguide further includes an embedded insulating film disposed under the optical waveguide, wherein the optical waveguide may have a channel waveguide structure formed to have a side wall exposing an upper surface of the embedded insulating film.
According to the present invention, there is provided an electro-optic modulation element in which a plurality of vertical pien junctions or a plurality of vertical pi-ene junctions are formed in an optical waveguide. Because the pien junctions or the pi-ene junctions can increase the effective refractive index change during device operation, a high performance optical modulator with high speed, high modulation efficiency, small size, low luminous intensity wave loss, and low power consumption characteristics Can be implemented.
Figs. 1A and 1B are cross-sectional views showing cross-sections of electro-optic modulation elements according to a first embodiment of the present invention.
1C is a graph illustrating a forward-doping profile of the electro-optic modulation device according to the first embodiment of the present invention.
FIGS. 2A and 2B are cross-sectional views showing cross sections of electro-optic modulation elements according to a first modification of the present invention.
FIG. 2C is a graph illustrating a forward-doping profile of an electro-optic modulation device according to a first modification of the present invention. FIG.
3A and 3B are cross-sectional views showing cross-sections of electro-optic modulation elements according to a second modification of the present invention.
FIG. 3C is a graph illustrating a forward-doping profile of an electro-optic modulation device according to a second modification of the present invention. FIG.
4A is a cross-sectional view illustrating an electro-optic modulation device according to a second embodiment of the present invention.
FIG. 4B is a graph illustrating a pure-doped profile of an electro-optic modulation device according to a second embodiment of the present invention.
5A is a cross-sectional view showing cross sections of electro-optic modulation elements according to a third modification of the present invention.
FIG. 5B is a graph illustrating a forward-doping profile of an electro-optic modulation device according to a third modification of the present invention. FIG.
6A and 6B are cross-sectional views showing cross sections of electro-optic modulation elements according to a fourth modification of the present invention.
FIG. 6C is a graph illustrating a forward-doping profile of an electro-optic modulation device according to a fourth modification of the present invention. FIG.
7A is a cross-sectional view showing cross sections of electro-optic modulation elements according to a fifth modification of the present invention.
FIG. 7B is a graph illustrating a forward-doping profile of an electro-optic modulation device according to a fifth modification of the present invention.
8A to 8C are cross-sectional views showing cross sections of electro-optic modulation elements according to a sixth modification of the present invention.
Figs. 9A and 9B are cross-sectional views showing cross sections of electro-optic modulation elements according to a third embodiment of the present invention.
10A and 10B are cross-sectional views showing cross-sections of electro-optic modulation elements according to a fourth embodiment of the present invention.
11 is a block diagram schematically illustrating an embodiment of an optical system including an optical transmitter and an optical receiver according to embodiments of the present invention.
12 is a diagram showing an embodiment of an optical modulator that can be employed as the optical device of Fig.
BRIEF DESCRIPTION OF THE DRAWINGS The above and other objects, features, and advantages of the present invention will become more readily apparent from the following description of preferred embodiments with reference to the accompanying drawings. However, the present invention is not limited to the embodiments described herein but may be embodied in other forms. Rather, the embodiments disclosed herein are provided so that the disclosure can be thorough and complete, and will fully convey the scope of the invention to those skilled in the art.
In this specification, when it is mentioned that a film is on another film or substrate, it means that it may be formed directly on another film or substrate, or a third film may be interposed therebetween. Further, in the drawings, the thicknesses of the films and regions are exaggerated for an effective explanation of the technical content. Also, while the terms first, second, third, etc. in various embodiments of the present disclosure are used to describe various regions, films, etc., these regions and films should not be limited by these terms . These terms are only used to distinguish any given region or film from another region or film. Thus, the membrane referred to as the first membrane in one embodiment may be referred to as the second membrane in another embodiment. Each embodiment described and exemplified herein also includes its complementary embodiment.
[First Example ]
Figs. 1A and 1B are cross-sectional views showing cross-sections of electro-optic modulation elements according to a first embodiment of the present invention. 1C is a graph illustrating a net doping profile of the electro-optic modulation device according to the first embodiment of the present invention. Specifically, FIG. 1C is a graph showing the forward-doping profile along the dashed line I-I 'of FIGS. 1A and 1B.
Referring to FIGS. 1A and 1B, a
According to an embodiment of the present invention, the
The first and second doping regions D1 and D2 may be formed in the first and second slab portions SP1 and SP2 and the vertical doping region (50) may be formed. According to this embodiment, the first and second doped regions D1 and D2 may be of a first conductivity type and the vertical doped
According to this embodiment, a part of the optical waveguide WG interposed between the first doped region D1 and the vertical doped region 50 (hereinafter referred to as a first body region B1) And may be of the same conductivity type as the first doped region D1 (i.e., the first conductive type). That is, the first body region B1 may be doped with a different conductivity type than that of the
Referring to FIG. 1A, the vertical doped
Referring to FIG. 1B, the thickness of the
1A and 1B are sectional views showing a cross section of an electro-optic modulation element projected on one of the planes crossing the traveling direction of the optical waveguide WG, Is not provided to show that the optical waveguide has a structure shown throughout the optical waveguide. That is, the electro-optic modulation device according to the present invention includes a portion formed in the cross-sectional structure shown in the drawings, but not all portions of the electro-optic modulation device need to be formed with the cross-sectional structure shown. For example, in a portion of the optical waveguide WG, the first body region B1 may have a portion directly contacting the second body region B2.
In addition, the first and second doped regions D1 and D2 may be doped with the same conductivity type and higher concentration than the first and second body regions B1 and B2, respectively. In addition, as shown in FIG. 1C, the vertical doped
According to this embodiment, the vertical doped
According to an embodiment, the first voltage V1 and the second voltage V2 may be a modulation voltage and a ground voltage, respectively. Accordingly, a predetermined potential difference, which is determined by the first voltage V1, may be generated between the vertical doped
[First Variation example ]
FIGS. 2A and 2B are cross-sectional views showing cross sections of electro-optic modulation elements according to a first modification of the present invention. FIG. 2C is a graph illustrating a forward-doping profile of an electro-optic modulation device according to a first modification of the present invention. FIG. Specifically, FIG. 2C is a graph showing the forward-doping profile along the dashed line I-I 'of FIGS. 2A and 2B. For brevity of description, the description of the technical features overlapping with the embodiments described with reference to Figs. 1A to 1C can be omitted.
Referring to FIGS. 2A and 2B, according to this embodiment, a vertical structure including two vertical
The inner doping region B3 is of the same conductivity type as the first and second body regions B1 and B2 and the
2A and 2B, the vertical
In operation, the first voltage V1 and the second voltage V2 may be a modulation voltage and a ground voltage, respectively. Accordingly, a predetermined potential difference, which is determined by the first voltage V1, may be generated between the vertical
[Second Variation example ]
3A and 3B are cross-sectional views showing cross-sections of electro-optic modulation elements according to a second modification of the present invention. FIG. 3C is a graph illustrating a forward-doping profile of an electro-optic modulation device according to a second modification of the present invention. FIG. Specifically, FIG. 3C is a graph showing the forward-doping profile along the dashed line I-I 'of FIGS. 3A and 3B. For brevity of description, the description of the technical features overlapping with the embodiments described with reference to Figs. 1A to 1C can be omitted.
Referring to FIGS. 3A and 3B, according to this embodiment, a vertical structure including three vertical
The inner doping regions B31 and B32 are conductive types such as the first and second body regions B1 and B2 and the
3A and 3B, the vertical
In operation, the first voltage V1 and the second voltage V2 may be a modulation voltage and a ground voltage, respectively. Accordingly, a predetermined potential difference, which is determined by the first voltage V1, may be generated between the vertical
[Second Example ]
4A is a cross-sectional view illustrating an electro-optic modulation device according to a second embodiment of the present invention. 4B is a graph illustrating a net doping profile of the electro-optic modulation device according to the second embodiment of the present invention. Specifically, FIG. 4B is a graph showing the forward-doping profile along the dashed line I-I 'of FIG. 4A. For brevity of description, the description of the technical features overlapping with the embodiments described with reference to Figs. 1A to 1C can be omitted.
Referring to FIG. 4A, a
The first and second doping regions D1 and D2 may be formed in the first and second slab portions SP1 and SP2 and the vertical doping region (50) may be formed. According to this embodiment, the first and second doped regions D1 and D2 may be of a first conductivity type and the vertical doped
According to this embodiment, a part of the optical waveguide WG interposed between the first doped region D1 and the vertical doped region 50 (hereinafter referred to as a first body region B1) It can have properties close to that of a semiconductor (intrinsic semiconductor). For example, the first body region B1 may be undoped silicon or silicon having a doping level that is orders of magnitude lower than the first doped region D1. Accordingly, the first doped region D1, the first body region B1, and the vertical doped
In addition, the vertical doped
4A is a cross-sectional view showing an electro-optic modulation element projected on one of the planes crossing the traveling direction of the optical waveguide WG, and the electro-optic modulation element according to the present invention is an optical waveguide It is not intended to be seen as having a structure as shown throughout. That is, the electro-optic modulation device according to the present invention includes a portion formed in the cross-sectional structure shown in the drawings, but not all portions of the electro-optic modulation device need to be formed with the cross-sectional structure shown. For example, in the portion not used as a modulation region of the optical waveguide WG, the
According to this embodiment, the first and second doped regions D1 and D2 may be formed to have a bottom surface in contact with the upper surface of the embedded insulating
The
According to an embodiment, the first voltage V1 and the second voltage V2 may be a modulation voltage and a ground voltage, respectively. A predetermined potential difference depending on the first voltage V1 may be generated between the vertical doped
[Third Variation example ]
5A is a cross-sectional view showing cross sections of electro-optic modulation elements according to a third modification of the present invention. FIG. 5B is a graph illustrating a forward-doping profile of an electro-optic modulation device according to a third modification of the present invention. FIG. Specifically, FIG. 5B is a graph showing the forward-doping profile along the dashed line I-I 'of FIG. 5A. For brevity of description, the description of the technical features overlapping with the embodiments described with reference to Figs. 4A and 4B can be omitted.
Referring to FIG. 5A, according to this embodiment, a vertical structure including two vertical
The intrinsic regions B33 and B34 may have physical properties similar to intrinsic semiconductors as the first and second body regions B1 and B2. However, it is not necessary that the intrinsic regions B33 and B34 and the first and second body regions B1 and B2 have completely the same physical properties.
The inner doped region B35 may have the same conductivity type as the first and second doped regions D1 and D2. That is, the inner doped region B35 has a different conductivity type from the vertical
5A, the vertical
According to an embodiment, the first voltage V1 and the second voltage V2 may be a modulation voltage and a ground voltage, respectively. A predetermined potential difference depending on the first voltage V1 may be generated between the vertical doped
[Fourth Variation example ]
6A and 6B are cross-sectional views showing cross sections of electro-optic modulation elements according to a fourth modification of the present invention. FIG. 6C is a graph illustrating a forward-doping profile of an electro-optic modulation device according to a fourth modification of the present invention. FIG. Specifically, FIG. 6C is a graph showing the forward-doping profile along the dashed line I-I 'of FIGS. 6A and 6B. For brevity of description, the description of the technical features overlapping with the embodiments described with reference to Figs. 4A and 4B can be omitted.
6A and 6B, according to this embodiment, the lip portion RP includes two
The inner doped region B35 may have the same conductivity type as the first and second doped regions D1 and D2. That is, the inner doped region B35 has a different conductivity type from that of the vertical
According to one embodiment, the vertical
6B, the vertical
[Fifth Variation example ]
7A is a cross-sectional view showing cross sections of electro-optic modulation elements according to a fifth modification of the present invention. FIG. 7B is a graph illustrating a forward-doping profile of an electro-optic modulation device according to a fifth modification of the present invention. Specifically, FIG. 7B is a graph showing the forward-doping profile along the dashed line I-I 'of FIG. 7A. For brevity of description, the description of the technical features overlapping with the embodiments described with reference to the preceding drawings may be omitted.
Referring to FIG. 7A, according to this embodiment, the lip portion RP includes three
The internal doped regions B36 and B37 may have the same conductivity type as the first and second doped regions D1 and D2. That is, the inner doped regions B36 and B37 have different conductivity types from those of the vertical
The vertical
[Sixth Variation example ]
8A to 8C are cross-sectional views showing cross sections of electro-optic modulation elements according to a sixth modification of the present invention. Specifically, Figs. 8A to 8C relate to embodiments modified from the embodiments described with reference to Figs. 5A, 6A and 7A, respectively, and for the sake of brevity of description, Descriptions of the technical features overlapping with the examples may be omitted.
8A to 8C, internal doping regions (i.e., B35 in FIGS. 8A and 8B and B36 and B37 in FIG. 8C) within the vertical structure are connected to a third circuit C3. ≪ / RTI > In this case, the third voltage V3 may be different from the second voltage V2, which is a voltage applied to the first and second doped regions D1 and D2. Accordingly, the pi-ene junctions of Fig. 8a or the pien junctions of Figs. 8b and 8c formed inside the vertical structure can be operated independently of the pi-ene junctions formed outside the vertical structure.
Specifically, according to one embodiment, forward DC voltage is applied between the
[Third Example ]
Figs. 9A and 9B are cross-sectional views showing cross sections of electro-optic modulation elements according to a third embodiment of the present invention. For brevity of description, the description of the technical features overlapping with the above-described embodiments may be omitted.
9A and 9B, a
First and second doped regions D1 and D2 may be formed in each of the first and second slab portions SP1 and SP2 and a vertical structure may be formed in the lip portion RP. According to this embodiment, the first doped region D1 and the second doped region D2 may have different conductivity types. For example, the first doped region D1 may be p-type and the second doped region D2 may be n-type. Accordingly, the first and second slab portions SP1, SP2 may be asymmetric in terms of the doping profile with respect to the lip portion RP.
The vertical structure may include a first vertical doped
In addition, the first vertical doped
The first and second vertical
The first
[Fourth Example ]
10A and 10B are cross-sectional views showing cross-sections of electro-optic modulation elements according to a fourth embodiment of the present invention. For brevity of description, the description of the technical features overlapping with the above-described embodiments may be omitted.
Referring to FIGS. 10A and 10B, a
A vertical structure having at least one pair of vertical
In the case where the internal regions B36 and B37 are doped, the internal regions B36 and B37 are lower than the internal doping region B35 at the impurity concentration, And may be the same as the internal doping region B35. According to this embodiment, the inner regions B36 and B37 and the
10B, the
The vertical
11 is a block diagram schematically illustrating an embodiment of an optical system including an optical transmitter and an optical receiver according to embodiments of the present invention.
Referring to FIG. 11, an
FIG. 12 is a diagram illustrating an embodiment of an
12, the
In operation, the
Meanwhile, the
According to an aspect of the present invention, the optical waveguide described with reference to FIGS. 1 to 10 may be implemented using an SOI wafer. According to another aspect of the present invention, the optical waveguide described with reference to FIGS. 1 to 10 may be implemented using an SOI wafer formed by implanting ions into a predetermined region of a silicon wafer. According to one embodiment, the ions may include oxygen atoms and may be injected locally at a predetermined position where the optical waveguide is to be formed.
Claims (26)
Wherein the optical waveguide has a slab waveguide structure including a first slab portion, a second slab portion and a rib portion interposed between the first and second slab portions, And the vertical structure is formed in the lip portion,
The optical waveguide includes:
A first body region extending from the first slab portion and contacting a side wall of the vertical structure; And
And a second body region extending from the second slab portion and contacting the other side wall of the vertical structure,
Wherein the first and second body regions are of a first conductivity type and the vertical structure comprises at least one vertical doped region having a second conductivity type different from the first conductivity type, .
Wherein the optical waveguide is a channel waveguide structure formed to have a side wall exposing an upper surface of the buried insulating film, wherein the optical waveguide is disposed under the optical waveguide.
Wherein the vertical length of the vertical structure is equal to the thickness of the lip portion and the first and second body regions are separated by the vertical structure.
A first wiring structure electrically connecting the vertical doped region and the first circuit; And
And a second wiring structure electrically connecting the slab portion and the second circuit,
Wherein the first and second circuits are configured to generate a potential difference for reverse-biasing operation of a pair of pien junctions between the first and second body regions and the vertical structure, .
Wherein the first slab portion comprises a first doped region of the first conductivity type,
The second slab portion including a second doped region of the first conductivity type,
The optical waveguide
A first body region extending from the first doped region and in contact with a side wall of the vertical structure; And
And a second body region extending from the second doped region and in contact with another side wall of the vertical structure,
Wherein the first and second body regions are formed of intrinsic semiconductors.
Wherein the first doped region, the first body region, and the vertical structure form a pi-junction,
Wherein the second doped region, the second body region, and the vertical structure form a pi-ene junction.
A first wiring structure electrically connecting the vertical doped region and the first circuit; And
And a second wiring structure electrically connecting the slab portion and the second circuit,
Wherein the first and second circuits are configured to generate a potential difference for net-bias operation of the pi-ene junctions.
The vertical structure
A plurality of vertical doped regions; And
And at least one inner region interposed between the vertical doped regions.
Wherein the at least one inner region comprises an inner doping region having a conductivity type different from that of the vertical doping regions to form a PN junction with the vertical doping regions. .
Wherein the at least one inner region includes a pair of intrinsic regions and an inner doped region interposed between the intrinsic regions and having a conductivity type different from that of the vertical doped regions, (PIN-junction). ≪ RTI ID = 0.0 > [0002] < / RTI >
Wherein the first and second slab portions comprise first and second doped regions of the first conductivity type, respectively,
Wherein the internal region and the first and second doped regions are electrically connected to circuits generating different voltages.
Wherein the optical waveguide has a slab waveguide structure including a first slab portion, a second slab portion and a rib portion interposed between the first and second slab portions, And the vertical structure is formed in the lip portion,
The optical waveguide includes:
A first body region extending from the first slab portion and contacting a side wall of the vertical structure; And
And a second body region extending from the second slab portion and contacting the other side wall of the vertical structure,
Wherein the first and second body regions are of a first conductivity type and the vertical structure comprises at least one vertical doped region having a second conductivity type different from the first conductivity type,
Wherein the first and second doped regions are electrically connected to each other under the lower wall of the vertical structure and are in an equipotential state.
Wherein the first slab portion comprises a first doped region of the first conductivity type,
The second slab portion including a second doped region of the first conductivity type,
The optical waveguide
A first body region extending from the first doped region and in contact with a side wall of the vertical structure; And
And a second body region extending from the second doped region and in contact with another side wall of the vertical structure,
Wherein the first and second body regions are formed of intrinsic semiconductors.
The lip portion includes a vertical structure having a pair of sidewalls and a bottom wall forming a PN junction,
The optical waveguide includes the first body region interposed between the first slab portion and the vertical structure and the second body region interposed between the second slab portion and the vertical structure Characterized in that the electro-optic modulation element.
Wherein the vertical length of the vertical structure is smaller than the thickness of the lip portion and the first and second body regions are connected to each other below the vertical structure.
A first wiring structure electrically connecting the vertical structure and the first circuit; And
And a second wiring structure electrically connecting the first and second slab portions to the second circuit,
Wherein the first and second circuits are configured to generate a potential difference for reverse-biasing operation of a pair of pien junctions between the first and second body regions and the vertical structure, .
The lip portion includes a vertical structure that constitutes at least two PIN junctions,
Wherein the first and second slab portions each include first and second doped regions of the first conductivity type, the optical waveguide includes the first body region and the second body region interposed between the first slab portion and the vertical structure, And a second body region interposed between the second slab portion and the vertical structure,
Wherein the first and second body regions are intrinsic semiconductors.
A first wiring structure electrically connecting the vertical structure and the first circuit; And
And a second wiring structure electrically connecting the first and second slab portions to the second circuit,
Wherein the first and second circuits are configured to generate a potential difference for net-bias operation of the pi-ene junctions.
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US12/872,881 US8548281B2 (en) | 2009-09-08 | 2010-08-31 | Electro-optic modulating device |
FR1057116A FR2949872B1 (en) | 2009-09-08 | 2010-09-08 | ELECTRO-OPTICAL MODULATION DEVICE |
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US3584239A (en) | 1969-09-19 | 1971-06-08 | Shell Oil Co | Clock driver output stage for capacitive load |
EP1256825A2 (en) | 1998-08-13 | 2002-11-13 | Bookham Technology PLC | Electro optical modulator |
JP2007531031A (en) | 2004-03-29 | 2007-11-01 | ユニベルシテ パリ−シュド | High frequency optoelectronic modulator integrated on silicon. |
KR100825723B1 (en) | 2006-07-28 | 2008-04-29 | 한국전자통신연구원 | Optical device including gate insulator with edge effect |
-
2010
- 2010-07-12 KR KR1020100066675A patent/KR101453473B1/en active IP Right Grant
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3584239A (en) | 1969-09-19 | 1971-06-08 | Shell Oil Co | Clock driver output stage for capacitive load |
EP1256825A2 (en) | 1998-08-13 | 2002-11-13 | Bookham Technology PLC | Electro optical modulator |
JP2007531031A (en) | 2004-03-29 | 2007-11-01 | ユニベルシテ パリ−シュド | High frequency optoelectronic modulator integrated on silicon. |
KR100825723B1 (en) | 2006-07-28 | 2008-04-29 | 한국전자통신연구원 | Optical device including gate insulator with edge effect |
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