CN100420770C - Vapour-deposition source for organic electroluminescent film vapour-deposition - Google Patents
Vapour-deposition source for organic electroluminescent film vapour-deposition Download PDFInfo
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- CN100420770C CN100420770C CNB2005100687166A CN200510068716A CN100420770C CN 100420770 C CN100420770 C CN 100420770C CN B2005100687166 A CNB2005100687166 A CN B2005100687166A CN 200510068716 A CN200510068716 A CN 200510068716A CN 100420770 C CN100420770 C CN 100420770C
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- vapor deposition
- deposition material
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/12—Organic material
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/541—Heating or cooling of the substrates
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
Abstract
The present invention discloses a deposition source (400, 500 A, 500 B, 500 C, 500 D) installed in a chamber, to form deposition organic electroluminescent layers onto a substrate (12), by applying a vaporized deposition material generated therein to the substrate (12), and by transferring heat to a vapor deposition material (20) received therein, heated by applied electric power, comprising; a top plate (401) on which a vapor efflux aperture (401 A) is formed, a side wall (402) , and a bottom plate (403), said vapor efflux aperture (401 A) having a length (L) which is longer than, or the same as, the width (b) of said substrate (12) to be coated with a deposition organic electroluminescent layers.
Description
The application is to be that July 18, application number in 2003 are 03178764.9 and denomination of invention dividing an application for " source for thermal physical vapor deposition of organic electroluminescent layers " application for a patent for invention the applying date
Technical field
The present invention relates to be used for the vapor deposition source (depositionsource) of evaporation organic electroluminescent film.In more detail, relate to and compensating, on the whole surface of substrate, form the source for thermal physical vapor deposition of organic electroluminescent layers of uniform luminescent film adding the heating source that produces along with the variation of the thickness of deposition material or the increase in the gap between substrate and the deposition material.
Background technology
Reduced vacuum evaporation operation (hot physical vapor evaporation operation) as the procedure in the low molecule organic electroluminescent device manufacturing process is to be moved because of the vaporized deposition material of heating (organism), thereby carry out the technology that evaporation forms luminescent film on the substrate surface in being fixed in cover, in this evaporation operation, deposition material is placed in the holder (vapor deposition source), and is heated to gasification temperature.The steam of deposition material condenses upon on the substrate to be coated after moving to the outside of the vapor deposition source of placing deposition material.Such evaporation operation need be used to place vapor deposition source that will vaporized deposition material and the substrate that the evaporation steam carries out evaporation, and is being in 10
-7To 10
-2Carry out in the container of the pressure state in the scope of holder (Torr).
In general, the vapor deposition source of placing deposition material by electric current during by its each wall (member) resistive material of temperature rising make.When electric current puts on vapor deposition source, its inner deposition material by from the radiant heat of the wall of vapor deposition source with by the conduction heat heating that produces with contacting of wall.Typical vapor deposition source is the chest type that forms opening on top.The steam that its opening allows to spray to substrate scatter (outflow).
The vapor coating material is used for being gasified and carries out evaporation on substrate surface, and it comprises the material of wide regions such as low temperature organism, metal or high temperature inorganics composition.In general, when carrying out the organic layer evaporation, starting materials (starting material) is a powder.Known this organic dust provides a plurality of chances to the hot gas coating of this form.At first, because most organism are the compositions (high molecular) with more weak bonded more complicated, so in order to prevent from gasification process, to take place to decompose necessary careful attention.Secondly, powder morphology can produce can not vaporized fluorescent material particulate, and this particulate can become steam in company with it and remain in the deposition material, with undesirable (lump) shape evaporation on substrate.Generally, be called as particulate or particulate contains thing in this layer on being formed at substrate.
Powder morphology has can support the moisture that is absorbed or adsorbs, the perhaps very large surface-area of volatile organic matter, and during heating volatile organic matter can be emitted, and gas and particulate can spray towards substrate laterally from vapor deposition source.Similarly consideration also relates to the material that can be dissolved, form the drop that is sprayed onto substrate surface before gasification.
This undesirable particle or drop etc. are often at goods, particularly generate unallowable defective in electronics or the optical goods, thereby blackening (spots) in image, occurs, perhaps in electron device, be short-circuited (short) or open a way (open) bad phenomenon.
For this organism powder is heated more equably; so released the organic vapor deposition device that the cleavage block that prevents particulate or drop arrives substrate; in addition, in order to protect vapor outlet port, multiple design has been proposed the structure of emitting the masking shield between the opening at deposition material and steam.
Fig. 1 is the general profile chart that the internal structure of the general evaporation coating device with above-mentioned functions is shown.There is shown in the inner vapor deposition source that are provided with 10 of the vacuum chamber 13 of evaporation coating device and be positioned at substrate 12 above the vapor deposition source 10.Substrate 12 that will the evaporation luminescent film is arranged on the upper board 13-1 of vacuum chamber 13, and the vapor deposition source 10 of placing deposition material (organism) is arranged on the insulating structure 14 on the bottom surface l3-2 that is fixed in vacuum chamber 13.
Fig. 2 a is the sectional view that the internal structure of vapor deposition source shown in Figure 1 10 is shown; as shown in the figure; in vapor deposition source 10, be provided with masking shield (baffle) 11B, be used for preventing that steam that particulate that the steam at deposition material 20 (organism) comprises or drop form from emitting opening 11C and emitting on the upper board 11A in vapor deposition source 10.It is corresponding that masking shield 11B and the steam that forms on upper board 11A are emitted opening 11C, and a plurality of steady arm 11B-1 that are fixed on the upper board 11A of vapor deposition source 10 fix, and keep the state that is separated with upper board 11A.
Have in the evaporation coating device of vapor deposition source 10 of this structure in utilization, for deposition material 20 heat supplieds to the middle body that is positioned at the outer wall 11D that leaves vapor deposition source 10, often or with upper board 11A constitute well heater, or heating unit is set on the top (perhaps bottom) of upper board 11A.Therefore, by means of being directly passed to deposition material 20 by the heat of sidewall 11D generation and the heat that is produced by upper board 11A, deposition material 20 is heated, gasifies.The steam of vaporized deposition material moves along the surface of masking shield 11B, and evaporation is on the surface of substrate (12 among Fig. 1) after the steam of upper board 11A is emitted opening 11C and emitted.
Fig. 2 b illustrates the sectional structure chart that operation has been carried out the variation at vapor deposition source upper board shown in Figure 1 after the regular hour and interval between the deposition material, there is shown carrying out, the state that the interval between the surface of upper board 11A and deposition material 20 increases along with the evaporation operation.
By means of above-mentioned heating, pneumatolysis, the amount of the deposition material 20 in the input vapor deposition source 10 reduces gradually with the carrying out of evaporation operation, thereby its thickness also reduces, therefore, after the process regular hour, the initial gap between the surface of deposition material 20 and the upper board 11A (Fig. 2 a it " A ") significantly increases (Fig. 2 b it " a ").
Along with the interval between the surface of such upper board 11A and deposition material 20 increases, heat transfer path increases, and evaporation rate will be lower than the evaporation rate (being the gasification rate of deposition material 20) of initial setting.Therefore, in order to keep the evaporation rate of initial setting, the temperature that requires deposition material 20 have been heated the upper board 11A of well heater effect raises.
Particularly along with the carrying out of operation, interval between the surface of upper board 11A and deposition material 20 increases, under this state, the heat that is produced by upper board 11A can not arrive deposition material 20 fully, even by means of the sidewall heat supplied of vapor deposition source 10, can not cause pneumatolysis to the deposition material 20 that is positioned at central part yet.The result is when the input amount of deposition material 20 (when promptly the thickness of the deposition material 20 of Tou Ruing is thick) for a long time, is difficult to expect that all deposition materials are gasified.
In addition, there are the substrate 12 of direct relation and the interval between the deposition material 20 also to increase with the homogeneity (uniformity) of vapor-deposited film, thereby can change through the evaporation characteristic along with the time.
Containing in the material of low molecule organic illuminating element is not heat-staple organism in a large number, therefore can cause and decompose or changes in material properties because of the excessive heat radiation in the evaporation operation, thus the problem that causes element characteristic to descend.In addition, according to the characteristic of the evaporation operation of carrying out under high vacuum environment, after having replenished the organism that consumes, need to cool off, to vacuum deflation and the operation that vacuumizes again, such step has caused the loss aspect activity time.
For addressing these problems, preferably once drop into the deposition material of more amount, make initial evaporation characteristic (for example gasification property of deposition material etc.) always keep constant.
On the other hand, in the vapor deposition source 10 with the structure shown in Fig. 2 a and Fig. 2 b, sidewall 11D plays a part as heating element (for example structure of twining heater coil at outer wall 11D periphery).But because as shown in Figure 1, it is that the sidewall 11D of vapor deposition source 10 escapes to outside structure, so the net quantity of heat that is produced by sidewall 11D can not be passed to deposition material 20, its part is by the outside that sheds, thereby has the low problem of thermo-efficiency.
In addition, as previously mentioned,, drop into vapor deposition source 10 interior deposition materials 20 and be consumed, thereby the thickness of deposition material 20 reduces along with the carrying out of evaporation operation.Therefore, also from producing with the corresponding sidewall 11D of deposition material 20 non-existent parts, such heat can not directly be passed to deposition material 20 to heat, thereby becomes the factor of waste energy.
As the other problems that vapor deposition source 10 is had, be to be delivered to the bottom that is positioned at vapor deposition source 10, promptly adjacent deposition material 20 fully with end member 11E by the heat that sidewall 11D produces.Consequently whole deposition materials 20 can not be heated, gasify, particularly, produce temperature head (being in the vapor deposition source 10 thermograde to be arranged) 20 of each deposition materials, thereby be difficult to obtain uniform vapor deposition source because of the relation of the position in vapor deposition source 10.
The present invention is the invention of the caused problem of increase at the interval between the upper board (heating unit) of the vapor deposition source that occurs for the carrying out that solves along with the above-mentioned existing evaporation operation deposition material surface interior with dropping into vapor deposition source, and its purpose is to provide a kind of and can compensates by in evaporate process and the heating unit that reduces to cause of the deposition material thickness that accompanies of the consumption of deposition material and vapor deposition source interval variation, that be used to form organic electroluminescent film between the deposition material surface.
It is a kind of by the additional insulation function that another object of the present invention is to provide, and prevents to shed the outside to improve the vapor deposition source of thermo-efficiency by the heat that heating unit produces.
It is a kind of by means of to the deposition material adjacent with the end member of vapor deposition source also heat supplied that a further object of the present invention is to provide, effectively utilize whole deposition materials, make by the temperature-induced variations factor and minimize, can access the uniform vapor-deposited film of thickness, be used to form the vapor deposition source of organic electroluminescent film.
Summary of the invention
For addressing the above problem, vapor deposition source of the present invention is characterised in that, comprising: container, and emit the upper board of opening, sidewall and end member and constitute by being formed with steam; Heating unit provides heat to the deposition material that is placed in the said vesse; And running gear, carry out work according to signal about the means of detection at the interval of the variation between above-mentioned heating unit and the above-mentioned deposition material surface, move above-mentioned heating unit, above-mentioned heating unit moves down by means of above-mentioned running gear, makes distance maintaining initial set value between above-mentioned heating unit and the deposition material surface.
Above-mentioned means of detection in the above-mentioned vapor deposition source and heating unit are set on the above-mentioned upper board, above-mentioned running gear comprises: a plurality of cylinder barrels (oil cylinder or cylinder), by the vacuum chamber support, the terminal of each connecting rod is fixed on the above-mentioned upper board, and above-mentioned upper board is moved up and down; And control device, receive the signal that is arranged on the means of detection on the upper board, when the interval between upper board and the deposition material surface is bigger than the interval of setting, make above-mentioned cylinder barrel work, move down the above-mentioned upper board of fixing each connecting rod on it along sidewall.
The vapor deposition source of another form of the present invention is characterised in that, comprising: container, and steam is emitted the upper board of opening, sidewall and end member that can vertical shifting constitutes by being formed with; Heating unit provides heat to the deposition material that is placed in the said vesse; And running gear, carry out work according to signal about the means of detection at the interval of the variation between above-mentioned heating unit and the above-mentioned deposition material surface, move member of the above-mentioned end, member of the above-mentioned end moves up by means of above-mentioned running gear, makes distance maintaining initial set value between above-mentioned heating unit and the deposition material surface.
Running gear in the above-mentioned vapor deposition source comprises: cylinder barrel, and by the vacuum chamber support, the terminal of connecting rod is fixed on the member of the above-mentioned end, and member of the above-mentioned end is moved up and down; And control device, receive the signal that is arranged on the means of detection on the above-mentioned upper board, when the interval between heating unit and the deposition material surface is bigger than the interval of setting, make above-mentioned cylinder barrel work, the member of the above-mentioned end of fixing connecting rod on it is moved up.
The vapor deposition source of another form of the present invention comprises: heating unit, and emit the upper board of opening, sidewall and end member and constitute by being formed with steam, and provide heat the position of selecting; Means of detection is used to survey the variation of the height that is placed on inner deposition material surface; And control device, control the work of above-mentioned heating unit selectively according to the signal of above-mentioned means of detection.
Heating unit is the periphery that is wrapped in above-mentioned sidewall, applied a plurality of coils of power supply respectively by means of the control of control device according to the height of deposition material, control device is the carrying out along with the evaporation operation, when changing, the height on above-mentioned deposition material surface controls, so that only the coil near the deposition material surface is applied power supply.
Form groove on the end of above-mentioned vapor deposition source member, coil is placed in the above-mentioned groove, and when coil was applied power supply, the heat that coil produces was passed to the lip-deep deposition material that is placed on end member.In addition, in the arranged outside of sidewall outer cover, to prevent being dissipated to the outside by the heat that heating unit produces.
In all vapor deposition source of as above explanation, emit opening or identical by means of the steam that on upper board, forms, or have the length longer than substrate width with the width of the substrate of evaporation vapor-deposited film, can on the whole surface of substrate, form uniform vapor-deposited film.
Description of drawings
Fig. 1 is the general profile chart of general organic electroluminescent device evaporation coating device.
Fig. 2 a is the sectional view of the vapor deposition source shown in Figure 1 before operation is carried out.
Fig. 2 b is the sectional view of the variation at the upper board of the vapor deposition source shown in Figure 1 after operation is shown carries out and the interval between the deposition material.
Fig. 3 a is the sectional view of the vapor deposition source of the present invention the 1st embodiment.
Fig. 3 b is the detailed plan view of the 3b part of Fig. 3 a.
Fig. 3 c is the sectional view of the position relation of the upper board of the vapor deposition source shown in Fig. 3 a after operation is shown finishes and deposition material.
Fig. 4 is the sectional view of the vapor deposition source of the present invention the 2nd embodiment.
Fig. 5 is the sectional view of the vapor deposition source of the present invention the 3rd embodiment.
Fig. 6 is the sectional view of the state that dissects of the line 6-6 along Fig. 5.
Fig. 7 is the skeleton view that briefly shows the relation of the vapor deposition source of the present invention the 4th embodiment and substrate.
Fig. 8 a illustrates to utilize the vapor deposition source shown in Figure 7 orthographic plan of the substrate of the original state of evaporation luminescent film from the teeth outwards.
Fig. 8 b illustrates the orthographic plan of substrate of state of finishing the evaporation of luminescent film in the mode that moves vapor deposition source (or substrate) shown in Figure 7.
Fig. 9 is the sectional view of vapor deposition source structure that the variform of the present invention the 4th embodiment is shown.
Embodiment
With reference to the accompanying drawings various embodiments of the present invention are elaborated below.
(the 1st embodiment)
Fig. 3 a is the sectional structure chart of the vapor deposition source of the present invention the 1st embodiment.The vapor deposition source 100 of present embodiment is the encloses container that is made of upper board 101, sidewall 102 and end member 103, and deposition material 20 (organism) has been placed by portion within it.The steam that has formed the steam that is used to emit the deposition material that has been gasified on upper board 101 is emitted opening 101A (being easy meter, hereinafter referred to as " opening "), and the masking shield 104 that is fixed on upper board 101 bottom surfaces is corresponding with opening 101A.
The maximum characteristics of embodiment shown in Fig. 3 a are, but constitute the upper board 101 of vapor deposition source 100 in the mode that easy on and off moves, and for this reason, are provided with the running gear 151 that is used for mobile upper board on upper board 101.
The running gear of Li Yonging is oil pressure or air pressure cylinder barrel 151 in the present embodiment, and 2 support racks 154 that are fixed on the sidewall of vacuum chamber (Fig. 1 13) of evaporation coating device extend on the vapor deposition source 100, and cylinder barrel 151 is separately positioned on its end.The connecting rod 152 of each cylinder barrel 151 is separately fixed at the both sides of the upper face of upper board 101, and in view of the above, each cylinder barrel 151 does not influence the deposition material steam and emits through the opening 101A of upper board 101.
On the other hand, the work of each cylinder barrel 151 is by not shown control device control, this control device is connected with means of detection 153 (for example optical sensor) on being arranged on masking shield 104 bottom surfaces, according to from the signal of optical sensor 153 inputs the work of each cylinder barrel 151 being controlled.
Fig. 3 b is the details drawing of the 3b part of Fig. 3 a, and it partly shows the sidewall 102 of evaporation 100 and the structure of the upper board 101 that moves up and down along sidewall 102.Internal surface at sidewall 102 has formed a plurality of vertical trench 102-1, has formed big jut 101-1 in each groove 102-1 that can insert sidewall 102 at the periphery of upper board 101 corresponding with it.Therefore, when upper board 101 moved up and down, each jut 101-1 of upper board 101 moved along each groove 102-1 of sidewall 102, the result, and upper board 101 oppose side walls 102 starting positions are done not have and are reversed the level and smooth easy on and off in ground and move.
Fig. 3 c is the sectional view of the position relation of the upper board of the vapor deposition source shown in Fig. 3 a after operation is shown finishes and deposition material.According to Fig. 3 a and Fig. 3 c the function by the vapor deposition source of the present embodiment that constitutes is as mentioned above described.
Along with the carrying out of evaporation operation, the amount that drops into the deposition material 20 in the vapor deposition source 100 because of heating, pneumatolysis reduces gradually, and therefore, the interval between the surface of deposition material 20 and the upper board 101 increases.The means of detection 153 (for example optical sensor) that is arranged on masking shield 104 bottom surfaces is surveyed the surface of such deposition material 20 and the interval variation between the upper board 101, and the signal that detects is sent to control device.
Control device is according to surface and the interval between the upper board 101 (interval between optical sensor and the deposition material surface adds the interval between upper board and the masking shield bottom surface) of the calculated signals deposition material 20 that sends from optical sensor 153, and the interval of the interval that will calculate and initial setting compares.When this comparative result is the surface of deposition material 20 and the interval between the upper board 101 when changing (increase), control device makes cylinder barrel 151 work.Because of each cylinder barrel 151 work, the connecting rod 152 of each cylinder barrel 151 stretches out, and in view of the above, the upper board 101 of fixing the end of connecting rod 152 on it moves down along sidewall 102.
When moving down by such upper board 101, when the interval between the surface of upper board 101 and deposition material 20 becomes identical with the initial interval of setting (Fig. 3 it " A "), when even the surface of the deposition material 20 that goes out according to the calculated signals that sends from optical sensor 153 of control device was identical with the interval of initial setting with the interval between the upper board 101, control device stopped the work of each cylinder barrel 151.
The moving down during the evaporation operation of upper board 101 that is caused by control device and cylinder barrel 151 like this carried out continuously, and after deposition material 20 completely consumeds, control device makes the connecting rod 152 of cylinder barrel 151 return initial position.Therefore, the upper board 101 of vapor deposition source 100 also returns initial position, drops into new deposition material later in vapor deposition source 100.
On the other hand, in Fig. 3 a and Fig. 3 c, show the situation that is arranged on the bottom surface of masking shield 104 as the optical sensor 153 of means of detection, in addition, also can be arranged on the bottom surface etc. of upper board 101, so long as neither hinder the evaporation operation can survey the position at the interval between deposition material surface and the well heater again, can be arranged on any position.
(the 2nd embodiment)
Fig. 4 is the sectional view of the vapor deposition source of the present invention the 2nd embodiment.The one-piece construction of the vapor deposition source 200 of present embodiment is identical with the structure of the vapor deposition source 100 shown in Fig. 3 a and Fig. 3 c.In addition, the upper board 201 of vapor deposition source 200 can play a part as to the heating unit (well heater) of deposition material 20 heat supplieds, perhaps also at an upper portion thereof (or bottom) other heating unit is set.In the following description, the situation that plays heating unit (well heater) with upper board 201 is that example describes.
The maximum characteristics of present embodiment are, its structure is for moving up the end member 203 of vapor deposition source 200 according to the interval variation between the upper board 201 of the surface of deposition material 20 and vapor deposition source 200.
As mentioned above, the homogeneity of the vapor-deposited film that forms on substrate (Fig. 1 12) surface is also with the interval variation between substrate 12 and the deposition material 20.Though the vapor deposition source 100 of the 1st embodiment shown in Fig. 3 a can compensate the interval variation between upper board 101 and the deposition material 20, do not have the device of regulating the interval variation between substrate 12 and the deposition material 20.Structure in the present embodiment is to constitute the end member 203 of vapor deposition source 200 is moved along sidewall 202 easy on and off, makes it possible to compensate the interval variation between this substrate 12 and the deposition material 20.
Be provided with the running gear that makes end member 203 vertical shifting in the bottom of end member 203.Structure in the present embodiment is, the running gear that is utilized is air pressure or oil pressure cylinder barrel 251, cylinder barrel 251 is arranged on the bottom surface 13-2 of vacuum chamber shown in Figure 1 13, and its connecting rod 252 is fixed on the bottom central part of end member 203 with its terminal of state of break-through insulating structure (Fig. 1 14).But this structure is an example only, for member at the bottom of the vertical shifting 203, also the cylinder barrel with other structures can be set.
In the present embodiment, also be the work of controlling cylinder barrel 251 by means of not shown control device, control device is connected with optical sensor 253 on being arranged on masking shield 204 bottom surfaces, according to from the signal of optical sensor input the work of cylinder barrel 251 being controlled.
On the other hand, on the inner peripheral surface of the sidewall 202 of the vapor deposition source 200 of present embodiment, a plurality of vertical trench have been made up, periphery at the end member 203 that moves up and down along sidewall 202 has made up a plurality of big jut that can insert each groove, in view of the above, end member 203 can oppose side wall 202 be done not have and is reversed (no change in location) that level and smooth easy on and off moves.Except that the member difference that only is built with jut, this structure is identical with the structure shown in Fig. 3 b, therefore, is easy meter, omits its explanation.
Because of aforesaid heating, pneumatolysis, the amount of the deposition material 20 in the input vapor deposition source 200 reduces gradually with the carrying out of evaporation operation, therefore, interval increase between the surface of deposition material 20 and the upper board 201 (that is to say, interval between the surface of deposition material 20 and the substrate 12 also increases, and each increasing amount is identical).The means of detection 253 (for example optical sensor) that is arranged on masking shield 204 bottom surfaces is surveyed the surface of such deposition material 20 and the interval variation between the upper board 201, and the signal that detects is passed to control device.
Control device is according to the surface of the calculated signals deposition material 20 that sends from optical sensor 253 and the interval between the upper board 201, and compares with the interval of initial setting.When this comparative result is the surface of deposition material 20 and the interval between the upper board 201 when changing, control device makes cylinder barrel 251 work that are arranged on end member 203 bottoms, and connecting rod 152 stretches out.By means of the work of cylinder barrel 251, the end member 203 of end of fixing the connecting rod 252 of cylinder barrel 251 on it moves up along sidewall 202.
When moving up by such end member 203, when the interval between the surface of upper board 201 and deposition material 20 becomes identical with the initial interval of setting, when promptly the surface of the deposition material 20 that goes out according to the calculated signals that sends from optical sensor 253 when control device is identical with the interval of initial setting with the interval between the upper board 201, the work of control device termination cylinder barrel 251.The moving up of end member 203 that is caused by control device and cylinder barrel 251 like this carried out during the evaporation operation continuously, after the deposition material completely consumed, cylinder barrel 251 and end member 203 also return initial position, drop into new deposition material later in vapor deposition source 200.
On the other hand, in Fig. 4, show the situation that is arranged on the bottom surface of masking shield 204 as the optical sensor 253 of means of detection, in addition, also can be arranged on the bottom surface etc. of upper board 201, so long as neither hinder the evaporation operation can easily survey the position at the interval between deposition material surface and the upper board 201 (being well heater) again, can be arranged on any position.
Utilize the above-described the 1st and the vapor deposition source of the 2nd embodiment, when the thickness of deposition material changes with the consumption of deposition material in evaporate process, upper board that can be by mobile vapor deposition source or end member are with the interval between deposition material surface and the upper board, or the distance maintaining between deposition material surface and the substrate is at the initial state of setting.Consequently by means of during the evaporation operation suitable heat being passed to deposition material, the vaporization temperature that can keep deposition material is constant, keeps best evaporation rate.Particularly in the 2nd embodiment, be not only the interval between upper board and the deposition material, and the interval between substrate and the deposition material always keeps suitable interval, the result can form uniform vapor-deposited film.
In addition, the deposition material adjacent with end member also can gasify, thereby can make the residual quantity of deposition material minimum.Particularly before the evaporation operation, drop into the occasion of deposition material to greatest extent, because can be with whole deposition material gasifications, so can make because organic the input again and in evaporation coating device, vacuumize, heating, time-related loss minimum that refrigerating work procedure produced, owing to can make the degree of depth of vapor deposition source darker, so can make organic input amount very big.
(the 3rd embodiment)
Fig. 5 is the sectional view of the vapor deposition source of the present invention the 3rd embodiment.The vapor deposition source 300 of present embodiment also is to be made of the upper board 301 that plays heating unit, sidewall 302 and end member 303.Form opening 301A, be provided with the identical of vapor deposition source 100 among structure and above-mentioned the 1st and the 2nd embodiment of upper board 301 of masking shield 304 and 200 upper board 101 and 102, therefore omitted its explanation.
The maximum characteristics of vapor deposition source 300 shown in Figure 5 are, the periphery of the sidewall 302 of vapor deposition source 300 twined as be used for to the heating unit of deposition material 20 heat supplieds a plurality of coil C1, C2 ..., Cn, and in the outer setting of outer wall 302 outer cover 350.
A plurality of coil C1, C2 ..., Cn is wrapped on the periphery of sidewall 302 of vapor deposition source 300, be positioned at deposition material 20 surperficial consistent of topmost coil C1 and the maximum height that can drop into vapor deposition source 300, coil Cn bottom is surperficial consistent with end member 303.
Each coil C1, C2 ..., Cn disposes to such an extent that can apply power supply respectively to it.Put on each coil C1, C2 ..., Cn power supply controlled device (not shown) control, control device is connected with the means of detection 353 that is arranged on vapor deposition source 300 inside (for example optical sensor).
To each coil C1, C2 of such arrangement ..., Cn Action Specification as follows.
At the evaporation operation initial stage, the surface of deposition material 20 of dropping into vapor deposition source 300 with maximum height is with topmost coil C1 is consistent, the surperficial corresponding to the top coil C1 with deposition material 20 applied power supply.Therefore, heat, gasify by the heat that is produced by the upper board 301 that plays heating unit with by the heat that the top coil C1 produces in the upper end portion of deposition material 20.With the carrying out of evaporation operation, because of the amount of the deposition material 20 in heating, the pneumatolysis vapor deposition source 300 reduces (height of deposition material 20 reduces) gradually.
The means of detection 353 that is arranged on masking shield 304 bottom surfaces is surveyed the height change of such deposition material 20, and sends this signal to control device, and control device is according to the height from this calculated signals deposition material 20.The height of the deposition material 20 that calculates according to control device to put on each coil C1, C2 ..., Cn power supply control.That is, when the height reduction of deposition material 20, when its surface was positioned at the position of the 2nd coil C2 under the coil C1 of the top, control device cut off and puts on the power supply of coil C1 topmost, and the 2nd coil C2 applied power supply.
Then, when the height of deposition material 20 reduces, when its surface was positioned at the position of coil Cn bottom, control device only applied power supply to coil Cn bottom, cut off put on other coils C1, C2 ... power supply.
Like this, even the height of deposition material 20 is along with evaporation changes, the coil that has applied power supply is corresponding from the part of the heat of upper board 301 with the acceptance in the deposition material 20 by means of always making, and can prevent from part that does not heat, gasifies in the deposition material and the non-existent part of deposition material are carried out unnecessary heat supply.
On the other hand, the outer cover 350 that is positioned at the outside of vapor deposition source 300 prevented by each coil C1, C2 ..., the heat that produces of Cn sheds to the outside, therefore, by each coil C1, C2 ..., the heat that produces of Cn almost all be passed to deposition material 20 through sidewall 302, thereby make the thermosteresis minimum.Particularly when lagging material is used in the space that forms between the sidewall 302 of vapor deposition source 300 and outer cover, can more effectively prevent to make the thermograde minimum of total system to the outside heat radiation.
In addition, make outer cover 350, can obtain good heat-proof quality by means of oxide compound or nitride with the big aluminium of thermal capacity (Al), zirconium (Zr), silicon (Si) or yttrium (Y) etc.Unaccounted label 350A be for supply lead is connected to each coil C1, C2 ..., Cn and the peristome that on outer cover 350, forms.
Other constructional features of present embodiment are shown in Fig. 6.Fig. 6 is the sectional view of the state that dissects of the line 6-6 along Fig. 5.There is shown groove 303A that forms in the bottom of end member 303 and the coil C that places this groove 303A.Groove 303A goes up at the width (or length direction) of end member 303 and forms, and is made of with a plurality of connection sections that are connected two adjacent line parts a plurality of line parts, and therefore, a coil C crosses the entire area configuration of end member 303.Power supply is connected with the two ends of coil C in inserting this groove 303A.
When carrying out above-mentioned evaporation operation to above-mentioned be arranged on coil C1, C2 on the sidewall 302 ..., Cn applies power supply (certainly also upper board 301 is applied power supply make it play heating unit), simultaneously the coil C among the groove 303A that inserts end member 303 also applied power supply.Therefore, the heat that is produced by the coil C among the groove 303A that inserts end member 303 has passed to and has been in the locational deposition material 20 adjacent with end member 303.
Like this, even the height of deposition material 20 is along with evaporation changes, the coil that has applied power supply is corresponding from the part of the heat of upper board 301 with the acceptance in the deposition material 20 by means of always making, and has prevented from part that does not heat, gasifies in the deposition material and the non-existent part of deposition material are carried out unnecessary heat supply.
The vapor deposition source of such present embodiment, even the height of deposition material is along with evaporation changes, always keep constant by means of making the interval between deposition material surface and the heating source, can prevent to carry out the change generation of caused thermograde of interval between deposition material surface and the heating source along with evaporation, consequently can make the variation minimum of the vapor-deposited film thickness that causes by temperature head, obtain the uniform vapor-deposited film of thickness.
In addition, utilize outer cover in the arranged outside of vapor deposition source can prevent by the heat that the coil that is provided with on sidewall the produces outside that sheds, the heat that is produced almost all reach deposition material through sidewall, in view of the above, can make the thermograde minimum of total system.
In addition, by on the end of vapor deposition source member, other coil being set, also can supply with sufficient heat to deposition material (promptly adjacent deposition material), have and effectively to utilize whole deposition materials, and can obtain the effect of uniform vapor-deposited film with the end member of vapor deposition source away from heating unit.
(the 4th embodiment)
Fig. 7 is the skeleton view that briefly shows the relation of the vapor deposition source of the present invention the 4th embodiment and substrate, is easy meter, the internal structure of not shown vapor deposition source 400.
The vapor deposition source 400 of present embodiment also is to be made of the upper board 401 with certain width and length, lateral members 402 and end member.On upper board 401, on its length direction, formed opening 401A.In each member 401,402 formed space, place deposition material (organic electronic luminescent material).
The characteristics of the vapor deposition source of present embodiment are, its structure as shown in Figure 7, effective evaporation length of vapor deposition source 400, promptly the length L of opening 401A of upper board 401 that evaporation is had an actual contribution than the width b of the substrate 12 that will form luminescent film thereon for long, perhaps identical with its width.
Fig. 8 a illustrates to utilize the vapor deposition source shown in Figure 7 orthographic plan of the substrate of the original state of evaporation luminescent film from the teeth outwards, when utilizing, on the whole width on substrate 12 surfaces, scatter equably and evaporation through the steam of the deposition material that the opening 401A on vapor deposition source 400 tops disperses by the surperficial evaporation luminescent film of the vapor deposition source 400 that constitutes as mentioned above at substrate 12.
Move on the length direction of substrate 12 by means of vapor deposition source 400 that makes formation like this or substrate 12, can carry out more effectively evaporation operation.Promptly, when making vapor deposition source 400 or substrate 12 in evaporation coating device, on the direction of arrow of Fig. 8 a, move horizontally (straight line moves), luminescent film shown in Fig. 8 a continuously evaporation on the whole length on substrate 12 surfaces, Fig. 8 b illustrates the orthographic plan of substrate of finishing the state of luminescent film evaporation in the mode that moves horizontally vapor deposition source 400 or substrate 12, the result has formed uniform luminescent film on the whole surface of substrate 12 shown in Fig. 8 b.
On the other hand, the vapor deposition source 100,200,300 that illustrates in above-mentioned the 1st to the 4th embodiment constitutes in the cross-sectional area on its top mode identical with the cross-sectional area of bottom that is the internal space with 400.Therefore, in such vapor deposition source, there is not big difference at the flow velocity of the material steam of the flow velocity of the material steam on top and bottom.In addition, exist the area on vapor deposition source top big, thereby the big problem of thermosteresis of inner deposition material.Be head it off, the present invention is out of shape the form of vapor deposition source.
The other characteristics of vapor deposition source of the present invention are to form the part that the cross-sectional area that has than the bottom is little cross-sectional area on the top of vapor deposition source.Fig. 9 a to Fig. 9 d is the sectional view that the structure of vapor deposition source of the present invention is shown, and the structure of each vapor deposition source 500A, the 500B shown in these figure, 500C, 500D is to be formed with the cross-sectional area on top of opening 501A, 501B, 501C, 501D less than the cross-sectional area of its underpart.Even the cross-sectional area difference at each position, mobile fluidic flow all is identical in any position in same pipe, and is in view of the above, big at the flow velocity at the big position of cross-sectional area at the velocity ratio at the little position of cross-sectional area.(bernoulli principle)
The result, in vapor deposition source 500A, the 500B shown in Fig. 9 a to Fig. 9 d, 500C, 500D, the flow velocity of the steam of the deposition material by the little position of cross-sectional area is greater than the flow velocity in the internal space, this has caused the increase of the kinetic energy of steam (molecule of the deposition material that has gasified), in view of the above, the density and the homogeneity of the film of evaporation on substrate surface have been improved greatly.In addition, the cross-sectional area at the position of dispersing by means of the deposition material steam reduces, and can make the thermosteresis minimum due to the heat radiation of outside, the interference that can avoid peripheral temperature to change and so on easily.
In addition, the present invention has used the big material of ratio of heat capacities quartz, for example oxide compound or the nitride of aluminium (Al), zirconium (Zr), silicon (Si) or yttrium (Y), and perhaps two or more synthetics is as the material of vapor deposition source.The such metal oxide or the ratio of heat capacities of nitride in view of the above, can improve the heat-proof quality of vapor deposition source as big (about more than 3: 1) of the organic substance of deposition material.
Claims (9)
1. a source for thermal physical vapor deposition of organic electroluminescent layers heats by means of the power supply that applies, and heat is delivered to the deposition material of portion's placement within it, the steam of the deposition material that generates in inside is sprayed, form vapor-deposited film at substrate surface, it is characterized in that, comprising:
Heating unit comprises that being formed with steam emits the upper board of opening, sidewall and end member, and provides heat to the position of selecting;
Means of detection is used to survey the variation of the height that is placed on inner deposition material surface; And
Control device according to the detected height change of above-mentioned means of detection, is controlled the work of above-mentioned heating unit selectively, and only making provides heat to the position near the deposition material surface.
2. source for thermal physical vapor deposition of organic electroluminescent layers as claimed in claim 1 is characterized in that,
Above-mentioned heating unit is by the periphery that is wrapped in above-mentioned sidewall, constitute by means of a plurality of coils that the control of control device is applied power supply respectively according to the height of deposition material.
3. source for thermal physical vapor deposition of organic electroluminescent layers as claimed in claim 2 is characterized in that,
The position of coil that is wrapped in the top in the coil on the above-mentioned sidewall is consistent with the height of the deposition material of the maximum that can drop in inside,
The position of coil bottom is surperficial consistent with end member.
4. source for thermal physical vapor deposition of organic electroluminescent layers as claimed in claim 2 is characterized in that,
Along with the carrying out of evaporation operation, when the height on above-mentioned deposition material surface changed, above-mentioned control device was controlled, and only made the coil near the deposition material surface is applied power supply.
5. source for thermal physical vapor deposition of organic electroluminescent layers as claimed in claim 1 is characterized in that,
Form groove on member of the above-mentioned end, coil is placed in the above-mentioned groove, and when coil was applied power supply, the heat that coil produces was passed to the lip-deep deposition material that is placed on end member.
6. source for thermal physical vapor deposition of organic electroluminescent layers as claimed in claim 5 is characterized in that,
Form on the width of end member or length direction at the groove that forms on the member of the above-mentioned end,
Be made of with a plurality of connection sections that are connected two adjacent line parts a plurality of line parts, the entire area of crossing end member forms.
7. source for thermal physical vapor deposition of organic electroluminescent layers as claimed in claim 1 is characterized in that,
Also comprise the outside that is located at above-mentioned sidewall, the outer cover that is used to prevent to be dissipated to the outside by the heat that heating unit produces.
8. source for thermal physical vapor deposition of organic electroluminescent layers as claimed in claim 7 is characterized in that,
Place lagging material in the space that is formed between sidewall and the outer cover.
9. as claim 7 or 8 described source for thermal physical vapor deposition of organic electroluminescent layers, it is characterized in that,
Outer cover is made of the metal oxide or the nitride of aluminium, zirconium, silicon or yttrium.
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR42271/2002 | 2002-07-19 | ||
| KR10-2002-0042271A KR100471358B1 (en) | 2002-07-19 | 2002-07-19 | Device for depositing electroluminescent layer |
| KR58116/2002 | 2002-09-25 | ||
| KR59786/2002 | 2002-10-01 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB031787649A Division CN1226448C (en) | 2002-07-19 | 2003-07-18 | Vapour-deposition source for organic electroluminescent film vapour-deposition |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1690245A CN1690245A (en) | 2005-11-02 |
| CN100420770C true CN100420770C (en) | 2008-09-24 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2005100687166A Expired - Lifetime CN100420770C (en) | 2002-07-19 | 2003-07-18 | Vapour-deposition source for organic electroluminescent film vapour-deposition |
| CNA2005100687151A Pending CN1873045A (en) | 2002-07-19 | 2003-07-18 | Source for thermal physical vapor deposition of organic electroluminescent layers |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2005100687151A Pending CN1873045A (en) | 2002-07-19 | 2003-07-18 | Source for thermal physical vapor deposition of organic electroluminescent layers |
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| Country | Link |
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| KR (1) | KR100471358B1 (en) |
| CN (2) | CN100420770C (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103526163A (en) * | 2012-07-04 | 2014-01-22 | 瑞必尔 | Evaporation device for a vacuum-deposition apparatus and vacuum-deposition apparatus including such an evaporation device |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100685808B1 (en) * | 2005-01-20 | 2007-02-22 | 삼성에스디아이 주식회사 | Vapor deposition apparatus for organic material |
| KR101041641B1 (en) * | 2008-10-27 | 2011-06-14 | 도레이첨단소재 주식회사 | An high-adhesive sheet for semi-conductor package singulation |
| CN102808154A (en) * | 2012-08-01 | 2012-12-05 | 东莞宏威数码机械有限公司 | Vertical evaporator for lateral evaporation and vertical evaporation equipment for lateral evaporation |
| CN104716228B (en) * | 2013-12-16 | 2017-06-27 | 中国电子科技集团公司第十八研究所 | The CIGS solar cells anti-corrosion evaporation line source device preparation method of high temperature |
| CN105177510B (en) | 2015-10-21 | 2018-04-03 | 京东方科技集团股份有限公司 | Evaporated device and evaporation coating method |
| CN106987807B (en) * | 2017-06-01 | 2019-04-26 | 京东方科技集团股份有限公司 | A kind of evaporation source, evaporation coating device and evaporation coating method |
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| US4023523A (en) * | 1975-04-23 | 1977-05-17 | Xerox Corporation | Coater hardware and method for obtaining uniform photoconductive layers on a xerographic photoreceptor |
| JPS54127877A (en) * | 1978-03-28 | 1979-10-04 | Ricoh Co Ltd | Preparation of thin film |
| KR970018722A (en) * | 1995-09-19 | 1997-04-30 | 이주현 | Large Area Thin Film Deposition for Large Screen TFT-LCD Fabrication |
| KR100224884B1 (en) * | 1996-08-31 | 1999-10-15 | 윤종용 | Apparatus for chamical material deposition |
| AUPO712097A0 (en) * | 1997-05-30 | 1997-06-26 | Lintek Pty Ltd | Vacuum deposition system |
| TW490714B (en) * | 1999-12-27 | 2002-06-11 | Semiconductor Energy Lab | Film formation apparatus and method for forming a film |
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|---|---|---|---|---|
| EP0967667A2 (en) * | 1998-06-23 | 1999-12-29 | TDK Corporation | Apparatus and method for preparing organic el device |
| JP2001057289A (en) * | 1999-08-20 | 2001-02-27 | Tdk Corp | Manufacturing device for organic el display device and manufacture thereof |
| CN1333385A (en) * | 2000-06-22 | 2002-01-30 | 松下电工株式会社 | Equipment and method for vacuum evaporation plating and organic fluorescent device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103526163A (en) * | 2012-07-04 | 2014-01-22 | 瑞必尔 | Evaporation device for a vacuum-deposition apparatus and vacuum-deposition apparatus including such an evaporation device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1873045A (en) | 2006-12-06 |
| KR20040008606A (en) | 2004-01-31 |
| KR100471358B1 (en) | 2005-03-15 |
| CN1690245A (en) | 2005-11-02 |
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