CN100418263C - Hemi-membrane substrate integrated waveguide - Google Patents
Hemi-membrane substrate integrated waveguide Download PDFInfo
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- CN100418263C CN100418263C CNB2006100883147A CN200610088314A CN100418263C CN 100418263 C CN100418263 C CN 100418263C CN B2006100883147 A CNB2006100883147 A CN B2006100883147A CN 200610088314 A CN200610088314 A CN 200610088314A CN 100418263 C CN100418263 C CN 100418263C
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Abstract
The present invention relates to a hemi-membrane substrate integrated waveguide, and relates to a waveguide mechanism of millimeter waves and microwaves, particularly to a hemi-membrane substrate integrated waveguide (HMSIW). The integrated waveguide is respectively provided with front metal patches and back metal patches at both sides of a dielectric substrate (1). The front side of the dielectric substrate (1) is provided with a waveguide (4) which is composed of the front metal patches. The waveguide (4) is rectangular. Both ends of the waveguide (4) are respectively an input port (41) and an output port (42). The rectangular part at the middle section of the waveguide (4) is provided with one row of metal holes (3) for connection. Four corners of the dielectric substrate (1) are provided with metal through holes (2) for fixation. The metal through holes are through holes arranged on the dielectric substrate. The inner wall of the through hole is provided with a metal sleeve which is connected with the metal patches covering both sides of the dielectric substrate. The waveguide has the advantages of small size, low loss, low cost, easy integration and good performance.
Description
Technical field
The present invention relates to the guided wave structure formed of a kind of millimeter wave and microwave, relate in particular to a kind of half module substrate integrated wave guide (HMSIW).
Background technology
In the design of existing millimeter wave and microwave passive component, rectangular waveguide is used widely as a kind of guided wave structure formed having obtained of function admirable, yet its volume is big, requirement on machining accuracy is strict, cost is high and defective not easy of integration is difficult to avoid.The substrate integration wave-guide that emerges in the past few years (SIW), keeping on the basis of the wave-guiding characteristic similar to rectangular waveguide, can adopt printed circuit board (PCB) (PCB) technology of standard to process, make significant improvement at production cost, volume and aspect planar circuit integrated.Yet traditional substrate integration wave-guide (SIW) is in lower microwave frequency band (such as X-band, Ku wave band), exist the relatively large weakness of size, this can cause the board area infinity when the microwave circuit of deft design, thereby has increased the size of final products.The half module substrate integrated wave guide that the present invention proposes is having the production technology identical with substrate integration wave-guide (SIW) with machining accuracy and keep on the basis of similar transmission characteristic, with the dimension reduction 50% (comparing with the substrate integration wave-guide under the same frequency) of self.
Summary of the invention
Technical problem: the object of the invention provided that a kind of size is little, loss is low, cost is low, easy of integration, half module substrate integrated wave guide (HMSIW) that performance is good.
Technical scheme: half module substrate integrated wave guide of the present invention relates to the half module substrate integrated wave guide (HMSIW) of millimeter wave and microwave device; this integrated waveguide is to be respectively equipped with front metal paster and back metal paster to form on the two sides of dielectric substrate; be provided with the waveguide that constitutes by the front metal paster in the front of dielectric substrate; waveguide is rectangular; the two ends of waveguide are respectively input port and output port; rectangle part in the waveguide stage casing is provided with row's connection plated-through hole; four angles of dielectric substrate are provided with the fixing plated-through hole of using; connecting with plated-through hole is to offer through hole on dielectric substrate, metallic sheath is set on through-hole wall and metallic sheath and the metal patch that is overlying on the dielectric substrate bilateral are coupled together.
Beneficial effect: compared with prior art, the present invention has following advantage:
1. low-loss; Because upper and lower metal backing in this half module substrate integrated wave guide (HMSIW) structure and middle plated-through hole; develop from substrate integrated waveguide technology; kept the intrinsic low loss characteristic of substrate integration wave-guide; simultaneously because the relative substrate integration wave-guide of the ratio of width to height (SIW) of this half module substrate integrated wave guide is littler; therefore electromagnetic wave is littler because of the loss that the imperfection of medium produces in communication process, thereby has better low loss characteristic.
2. low-cost; Because this half module substrate integrated wave guide (HMSIW) structure only adds upper and lower double layer of metal coating by the single-layer medium plate and middle plated-through hole constitutes; so can adopt very ripe at present single-layer printed circuit plate (PCB) production technology to produce, cost is very cheap.
3. difficulty of processing is low, is easy to large-scale production; Traditional rectangular metal waveguide is very high to requirement on machining accuracy, and difficulty of processing is big, so can not large-scale production.And this half module substrate integrated wave guide (HMSIW) structure adopts single-layer printed circuit plate (PCB) production technology just may meet the requirements of precision and satisfied performance is arranged, thus can large-scale production, and difficulty of processing is also lower.
4. size is little, is easy to integrated; Because this half module substrate integrated wave guide (HMSIW) structure adopts single-layer printed circuit plate (PCB) explained hereafter, be integrated in the large-scale circuit and go so can be used as the part of printed circuit board (PCB), avoided the trouble in a lot of designs.
5. the upper and lower surface of device all has metal to cover, and antijamming capability is strong.
Description of drawings
Fig. 1 is a structural representation of the present invention.Dielectric substrate 1, fixing with plated-through hole 2, connection plated-through hole 3, waveguide 4, input port 41 and output port 42 is arranged among the figure, and the metal backing opening edge is along 5.
Embodiment
It is guided wave structure formed that half module substrate integrated wave guide of the present invention relates to the half module substrate integrated wave guide (HMSIW) of millimeter wave and microwave device, comprise the dielectric substrate 1 that is provided with metal patch, on dielectric substrate 1, be provided with the connection plated-through hole 3 of row's periodic arrangement, the diameter that connects with plated-through hole is 0.5 millimeter, and adjacent connection is 0.8 millimeter with the spacing between the plated-through hole center; The metal backing opening edge that connects with the close medium center of plated-through hole centre distance is 6.5 millimeters along the distance between 5.Input port 41 and output port 42 are respectively input, output.Above-mentioned connection plated-through hole is to offer through hole on dielectric substrate, metallic sheath is set on through-hole wall and metallic sheath and the metal patch that is overlying on the dielectric substrate bilateral are coupled together.
Claims (1)
1. half module substrate integrated wave guide; it is characterized in that this integrated waveguide is to be respectively equipped with front metal paster and back metal paster to form on the two sides of dielectric substrate (1); be provided with the waveguide (4) that constitutes by the front metal paster in the front of dielectric substrate (1); waveguide (4) is rectangular; the two ends of waveguide (4) are respectively input port (41) and output port (42); rectangle part in waveguide (4) stage casing is provided with a row and connects with plated-through hole (3); four angles of dielectric substrate (1) are provided with the fixedly plated-through hole of usefulness (2); connecting with plated-through hole (3) is to offer through hole on dielectric substrate, metallic sheath is set on through-hole wall and metallic sheath and the metal patch that is overlying on the dielectric substrate bilateral are coupled together.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006100883147A CN100418263C (en) | 2006-07-10 | 2006-07-10 | Hemi-membrane substrate integrated waveguide |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006100883147A CN100418263C (en) | 2006-07-10 | 2006-07-10 | Hemi-membrane substrate integrated waveguide |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1877903A CN1877903A (en) | 2006-12-13 |
| CN100418263C true CN100418263C (en) | 2008-09-10 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2006100883147A Expired - Fee Related CN100418263C (en) | 2006-07-10 | 2006-07-10 | Hemi-membrane substrate integrated waveguide |
Country Status (1)
| Country | Link |
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| CN (1) | CN100418263C (en) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102280679A (en) * | 2010-06-13 | 2011-12-14 | 中兴通讯股份有限公司 | Integrated waveguide of metallization slotted substrate |
| CN101916914A (en) * | 2010-08-11 | 2010-12-15 | 东南大学 | Bragg slot array antenna based on half-module substrate integrated waveguide |
| CN102723565B (en) * | 2011-03-30 | 2014-07-02 | 南京航空航天大学 | Image transition half-module substrate integrated waveguide cross-shaped power divider |
| CN102723564B (en) * | 2011-03-30 | 2014-11-26 | 南京航空航天大学 | T-shaped power divider of image transition half-mode substrate integrated waveguide |
| CN102723562B (en) * | 2011-03-30 | 2014-07-02 | 南京航空航天大学 | Image transition half-module substrate integrated waveguide |
| CN102386472B (en) * | 2011-10-26 | 2013-11-27 | 电子科技大学 | Ka-waveband power combiner based on SIW (Substrate Integrated Waveguide) |
| CN104363058B (en) * | 2014-10-22 | 2019-06-21 | 上海交通大学 | High speed data transmission system based on half module substrate integrated wave guide interconnection |
| CN107256998B (en) * | 2017-06-23 | 2019-05-24 | 电子科技大学 | Based on half module substrate integrated wave guide Meta Materials line filter |
| WO2019000242A1 (en) * | 2017-06-27 | 2019-01-03 | 上海诺基亚贝尔股份有限公司 | Microwave device structure and implementation method therefor |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005318360A (en) * | 2004-04-30 | 2005-11-10 | Tdk Corp | Waveguide type wave guide line and high frequency module |
| CN1697249A (en) * | 2005-06-01 | 2005-11-16 | 东南大学 | Wave-guide integrated on substrate-band-pass filter of coplanar wave-guide |
| CN2914354Y (en) * | 2006-07-10 | 2007-06-20 | 东南大学 | Half-die substrate integrated waveguide |
-
2006
- 2006-07-10 CN CNB2006100883147A patent/CN100418263C/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005318360A (en) * | 2004-04-30 | 2005-11-10 | Tdk Corp | Waveguide type wave guide line and high frequency module |
| CN1697249A (en) * | 2005-06-01 | 2005-11-16 | 东南大学 | Wave-guide integrated on substrate-band-pass filter of coplanar wave-guide |
| CN2914354Y (en) * | 2006-07-10 | 2007-06-20 | 东南大学 | Half-die substrate integrated waveguide |
Non-Patent Citations (4)
| Title |
|---|
| Guided-wave and leakage characteristics of substrateintegrated waveguide. Feng Xu, Ke Wu.IEEE Transactions on Microwave Theory and Techniques,Vol.Vol. 53 No.No. 1. 2005 |
| Guided-wave and leakage characteristics of substrateintegrated waveguide. Feng Xu, Ke Wu.IEEE Transactions on Microwave Theory and Techniques,Vol.Vol. 53 No.No. 1. 2005 * |
| Investigations on the propagation characteristics of thesubstrate integrated waveguide based on the method of lines. L. Yan, W. Hong, K. Wu, T. J. Cui.IEE Proceedings - Microwaves, Antennas and Propagation,Vol.Vol.152 No.No. 1. 2005 |
| Investigations on the propagation characteristics of thesubstrate integrated waveguide based on the method of lines. L. Yan, W. Hong, K. Wu, T. J. Cui.IEE Proceedings - Microwaves, Antennas and Propagation,Vol.Vol.152 No.No. 1. 2005 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1877903A (en) | 2006-12-13 |
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