CN2914358Y - Half-die substrate integrated waveguide ring bridge - Google Patents
Half-die substrate integrated waveguide ring bridge Download PDFInfo
- Publication number
- CN2914358Y CN2914358Y CN 200620074782 CN200620074782U CN2914358Y CN 2914358 Y CN2914358 Y CN 2914358Y CN 200620074782 CN200620074782 CN 200620074782 CN 200620074782 U CN200620074782 U CN 200620074782U CN 2914358 Y CN2914358 Y CN 2914358Y
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- ring
- port
- substrate integrated
- half module
- wave guide
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Abstract
A ring-shaped electric bridge of half mode substrate integrated waveguide (HMSIW) relates to a millimeter wave and microwave device, in particular to a ring electric bridge of HMSIW. The ring electric bridge comprises a dielectric substrate (1), metallic patches arranged on front and back surfaces of the dielectric substrate (1), wherein the metallic patch on the front surface constitute a ring-shaped HMSIW (4); a first terminal (41), a second terminal (42), a third terminal (43) and a fourth terminal (44) are connected on the ring-shaped HMSIW (4) in series to divide the ring into four sections, and plated trough holes (3) are arranged between the front metal patch and the rear metal patch through the dielectric substrate (1). The ring-shaped HMSIW (4) has a total length '1.5 + 2' multiplied by n (wherein 'n' is a nonnegative integral') times that of the guide wavelength correspondent to working frequency. The ring electric bridge has the advantages of small dimension, low loss, low cost, easy integration and good performance.
Description
Technical field
The utility model relates to a kind of millimeter wave and microwave device, relates in particular to a kind of half module substrate integrated wave guide (HMSIW) ring-shape bridge.
Background technology
In existing millimeter wave and microwave passive component, can realize that the bridge structure of 180 degree phase difference outputs has two kinds of forms usually: the E ground roll is led form and microstrip line ring-shape bridge form.Though the former better performances, difficulty of processing is big, cost is high; The latter is under the high-frequency condition, and radiation loss is big.By emerging substrate integration wave-guide (SIW) in recent years though the ring-shape bridge of art designs has reduced radiation loss, but because substrate integration wave-guide (SIW) itself is a kind of waveguiding structure, consider the cut-off characteristics of waveguide itself, its width must satisfy certain requirement, and therefore substrate integration wave-guide (SIW) ring-shape bridge of designing is difficult to satisfactory dimensionally.So on the basis of substrate integration wave-guide (SIW) ring-shape bridge, make further improvement, design and have that size is littler, loss is lower, the better ring-shape bridge of performance, have important practical significance.
Summary of the invention
Technical problem: the purpose of this utility model provides that a kind of size is little, loss is low, cost is low, easy of integration, half module substrate integrated wave guide (HMSIW) ring-shape bridge that performance is good.
Technical scheme: half module substrate integrated wave guide ring electric bridge of the present utility model relates to the half module substrate integrated wave guide ring electric bridge of millimeter wave and microwave device, comprise the dielectric substrate that is provided with metal patch, on dielectric substrate, be provided with 1 annular half module substrate integrated wave guide, the girth of ring be the operating frequency correspondence guide wavelength 1.5+2*n doubly, wherein n is a nonnegative integer; The inboard of annular half module substrate integrated wave guide is the annular sidewall that a circle is made of metal throuth hole, and the outside of annular half module substrate integrated wave guide is the opening surface of annular.First port, second port, the 3rd port, the 4th port are connected in parallel on the annular half module substrate integrated wave guide, and whole ring is divided into four sections.If signal import by first port, the 3rd port no-output then, and second port and the 4th port have the signal output of constant amplitude, homophase, and promptly first port, the 3rd port are isolated from each other, and second port and the 4th port constant power are exported.Signal is imported by the 3rd port, the first port no-output then, and second port and the 4th port have constant amplitude, anti-phase signal output.Above-mentioned plated-through hole is to offer through hole on dielectric substrate, metallic sheath is set on through-hole wall and metallic sheath and the metal patch that is overlying on the dielectric substrate bilateral are coupled together.
Beneficial effect: compared with prior art, the utlity model has following advantage:
1. low-loss; Because upper and lower metal backing in this half module substrate integrated wave guide (HMSIW) structure and middle plated-through hole; develop from substrate integrated waveguide technology; kept the intrinsic low loss characteristic of substrate integration wave-guide; simultaneously because the relative substrate integration wave-guide of the ratio of width to height (SIW) of this half module substrate integrated wave guide is littler; therefore electromagnetic wave is littler because of the loss that the imperfection of medium produces in communication process, thereby has better low loss characteristic.
2. low-cost; Because this half module substrate integrated wave guide (HMSIW) structure only adds upper and lower double layer of metal coating by the single-layer medium plate and middle plated-through hole constitutes; so can adopt very ripe at present single-layer printed circuit plate (PCB) production technology to produce, cost is very cheap.
3. difficulty of processing is low, is easy to large-scale production; Traditional rectangular metal waveguide is very high to requirement on machining accuracy, and difficulty of processing is big, so can not large-scale production.And this half module substrate integrated wave guide (HMSIW) structure adopts single-layer printed circuit plate (PCB) production technology just may meet the requirements of precision and satisfied performance is arranged, thus can large-scale production, and difficulty of processing is also lower.
4. size is little, is easy to integrated; Because this half module substrate integrated wave guide (HMSIW) structure adopts single-layer printed circuit plate (PCB) explained hereafter, be integrated in the large-scale circuit and go so can be used as the part of printed circuit board (PCB), avoided the trouble in a lot of designs.
5. the upper and lower surface of device all has metal to cover, and antijamming capability is strong.
6. the output phase stability of ring-shape bridge is good.
Description of drawings
Fig. 1 is a structural front view of the present utility model.Wherein have: dielectric substrate 1, installation plated-through hole 2, plated-through hole 3, half module substrate integrated wave guide 4, first port 41, second port 42, the 3rd port 43, the 4th port 44, opening surface 45.
Embodiment
The utility model relates to the half module substrate integrated wave guide ring electric bridge of millimeter wave and microwave device; this ring-shape bridge is to be respectively equipped with front metal paster and back metal paster to form on the two sides of dielectric substrate 1; be provided with 1 annular half module substrate integrated wave guide 4 that constitutes by the front metal paster in the front of dielectric substrate 1; first port 41; second port 42; the 3rd port 43; the 4th port 44 is connected in parallel on the annular half module substrate integrated wave guide 4; whole ring is divided into four sections, between front metal paster and back metal paster, is provided with plated-through hole 3 by dielectric substrate 1.The total length of annular half module substrate integrated wave guide 4 be the operating frequency correspondence guide wavelength 1.5+2*n doubly, wherein n is a nonnegative integer.The inboard of annular half module substrate integrated wave guide is the annular sidewall that a circle is made of metal throuth hole 3.The diameter of plated-through hole is 0.4 millimeter, and the spacing between the adjacent metal through hole center is 0.8 millimeter; Distance between plated-through hole 3 centers and the opening surface 45 is 9.50 millimeters.If signal import by first port, the 3rd port 43 no-outputs then, and second port 42 and the 4th port 44 have the signal output of constant amplitude, homophase, and promptly first port, the 3rd port 43 are isolated from each other, and second port 42, v constant power are exported.Signal is by the input of the 3rd port 43, the first port no-output then, and second port 42 and the 4th port 44 have constant amplitude, anti-phase signal output.Above-mentioned all types of plated-through hole is to offer through hole on dielectric substrate, metallic sheath is set on through-hole wall and metallic sheath and the metal patch that is overlying on the dielectric substrate bilateral are coupled together.
Claims (3)
1. half module substrate integrated wave guide ring electric bridge; it is characterized in that this ring-shape bridge is to be respectively equipped with front metal paster and back metal paster to form on the two sides of dielectric substrate (1); be provided with 1 annular half module substrate integrated wave guide (4) that constitutes by the front metal paster in the front of dielectric substrate (1); first port (41); second port (42); the 3rd port (43); the 4th port (44) is connected in parallel on the annular half module substrate integrated wave guide (4); whole ring is divided into four sections, between front metal paster and back metal paster, is provided with plated-through hole (3) by dielectric substrate (1).
2. half module substrate integrated wave guide ring electric bridge according to claim 1, the total length that it is characterized in that annular half module substrate integrated wave guide (4) be the operating frequency correspondence guide wavelength 1.5+2*n doubly, wherein n is a nonnegative integer.
3. half module substrate integrated wave guide ring electric bridge according to claim 1, the inboard that it is characterized in that annular half module substrate integrated wave guide are the annular sidewall that a circle is made of metal throuth hole (3).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200620074782 CN2914358Y (en) | 2006-07-10 | 2006-07-10 | Half-die substrate integrated waveguide ring bridge |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200620074782 CN2914358Y (en) | 2006-07-10 | 2006-07-10 | Half-die substrate integrated waveguide ring bridge |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN2914358Y true CN2914358Y (en) | 2007-06-20 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200620074782 Expired - Lifetime CN2914358Y (en) | 2006-07-10 | 2006-07-10 | Half-die substrate integrated waveguide ring bridge |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN2914358Y (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1949589B (en) * | 2006-07-10 | 2010-05-12 | 东南大学 | Half module substrate integrated wave guide ring electric bridge |
| CN102723565A (en) * | 2011-03-30 | 2012-10-10 | 南京航空航天大学 | Image transition half-module substrate integrated waveguide cross-shaped power divider |
-
2006
- 2006-07-10 CN CN 200620074782 patent/CN2914358Y/en not_active Expired - Lifetime
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1949589B (en) * | 2006-07-10 | 2010-05-12 | 东南大学 | Half module substrate integrated wave guide ring electric bridge |
| CN102723565A (en) * | 2011-03-30 | 2012-10-10 | 南京航空航天大学 | Image transition half-module substrate integrated waveguide cross-shaped power divider |
| CN102723565B (en) * | 2011-03-30 | 2014-07-02 | 南京航空航天大学 | Image transition half-module substrate integrated waveguide cross-shaped power divider |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| AV01 | Patent right actively abandoned |
Granted publication date: 20070620 Effective date of abandoning: 20060710 |