CN102386472B - Ka-waveband power combiner based on SIW (Substrate Integrated Waveguide) - Google Patents
Ka-waveband power combiner based on SIW (Substrate Integrated Waveguide) Download PDFInfo
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- CN102386472B CN102386472B CN2011103289819A CN201110328981A CN102386472B CN 102386472 B CN102386472 B CN 102386472B CN 2011103289819 A CN2011103289819 A CN 2011103289819A CN 201110328981 A CN201110328981 A CN 201110328981A CN 102386472 B CN102386472 B CN 102386472B
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Abstract
A Ka-waveband power combiner based on SIW (Substrate Integrated Waveguide) belongs to the technical field of microwave/millimeter wave devices, and comprises an input signal power dividing structure and a power combining output structure, wherein the input signal power dividing structure comprises a first-stage Y-shaped microstrip line halving power divider and a second-stage half-model substrate integral waveguide halving power divider; and the two half-model substrate integral waveguide halving power dividers are arranged back to back and output towards two external sides; the power combining output structure comprises two half-model substrate integral waveguide power combiners and one half-model-full-model substrate integral waveguide power combiner; the power combiners have a structure of being symmetrical relative to center lines; and the two half-model substrate integral waveguide power combiners form a semi-encircling structure for the two half-model substrate integral waveguide halving power dividers, so that the power combining output structure and the input signal power dividing structure form an embedded combination, thus realizing structurally tightening. The Ka-waveband power combiner has the advantages of small size, excellent performance, low cost, light weight, easiness for transplanting and convenience in integration.
Description
Technical field
The invention belongs to microwave/millimeter wave device technology field, relate to a kind of Ka wave band power combiner, especially based on the shrunk type power combiner of substrate integration wave-guide.
Background technology
The millimeter wave power combining amplifier, as the basic fundamental of the device commonly used in millimeter-wave systems and raising millimeter wave solid-state circuit power output, obtains fervent concern and the research of Chinese scholars always.It passes through several coherent unit of combination, or, by the method for a plurality of split circuit power of stack, obtains larger power output.It mainly adopts metal waveguide and plane microstrip circuit form, and traditional metal waveguiding structure differential loss is low, the Q value is high, but its cost is high, weight is high; Although and microstrip structure is lightweight, and be planar structure, its differential loss is large, has limited their application in practice.
Substrate integration wave-guide be closely appear at during the last ten years a kind of in the microwave and millimeter wave field and have that insertion loss is little, radiation is low, the power capacity advantages of higher be integrated in novel guided wave structure formed in dielectric substrate.It forms equivalent rectangular waveguide guided wave system by metal throuth hole in a row on the low loss dielectric substrate of two-sided covering metal layer, and then the acquisition propagation characteristic similar to the metal rectangular waveguide of filled media.Substrate integration wave-guide can be realized the coplanar integrated of passive device and active device and circuit effectively, with traditional waveguide form microwave and millimeter wave device, compares and has obvious advantage aspect processing cost; In the higher frequency range of frequency, advantage is more outstanding, is applicable to very much high Integrated design and the batch production of microwave and millimeter wave circuit.
In order further to reduce size, improve integrated level, a kind of improvement structure has been proposed again recently---half module substrate integrated wave guide (Half Mode Substrate Integrated Waveguide, SIW).While utilizing substrate integration wave-guide to be operated in main mould state, its longitudinal center's plane of symmetry can be equivalent to the characteristic of magnetic wall, structurally can be divided into two reciprocity half modules along center line guided wave structure formed, namely half module substrate integrated wave guide.New construction more original substrate integration wave-guide dimensionally reduces approximately 50%, has kept simultaneously the premium properties of substrate integration wave-guide.
Chinese scholars has been done a lot of research to the power synthesis amplifier based on SIW: 2003, the people such as Simon Germain have realized Y type and T-shaped SIW bisection power divider in the design of Ka wave band, wherein Y type power splitter obtains and is less than-reflection loss of 18dB in 25.2% relative bandwidth, and T-shaped power splitter obtained and has been less than in 10.2% bandwidth-reflection loss of 19dB.2005, the people such as R G Bosisio proposed a kind of Novel miniaturization DeSIW six road power splitter designs, in 22～26GHz frequency range, have realized that reflection coefficient is less than-20dB.At the Ka wave band, in August, 2008, the people such as gold petrel are in conjunction with full mould and partly touch substrate integration wave-guide, having designed the internal reflection of 33.5～35.5GHz frequency range is less than-10dB, the 8 road power synthesis amplifiers that reach minimum differential loss 2.1dB at 34.3GHz (as shown in Figure 1, refer to: golden petrel, " A Novel Spatial Power Combiner Based on SIW and HMSIW " IEEE MTT-S IMWS, in December, 2008).But the structure of the people such as golden petrel design, power splitter adopt 360 degree merits to divide, and when synthetic tributary signal poor be two 360 degree, can only can reach this requirement at specific frequency, thus reflection bandwidth is less, size greatly, differential loss is also not little.
Summary of the invention
The invention provides a kind of wave band of Ka based on substrate integration wave-guide power combiner, on performance, possess that Insertion Loss is little, the zone of reflections roomy in, have the characteristics such as size is little, lightweight, cost is low.
Technical solution of the present invention is as follows:
A kind of wave band of Ka based on substrate integration wave-guide power combiner, comprise that input signal merit separation structure A and power synthesize export structure B.
Described input signal merit separation structure A is micro-band-half module substrate integrated wave guide hybrid circuit structure; comprise two-stage merit separation structure: first order merit separation structure is that Y type microstrip line 2 grades are divided power splitter A1, and second level merit separation structure is that two half module substrate integrated wave guides, 2 grades are divided power splitter A3.Described Y type microstrip line 2 grades divide two output branch roads of power splitter A1 by gradual change microstrip line A2, to be connected to the input that two half module substrate integrated wave guides, 2 grades are divided power splitter A3 respectively, and two half module substrate integrated wave guide 2 grades are divided power splitter A3 to arrange back-to-back and export to two outsides.
The synthetic export structure B of described power is half module-full mould substrate integrated wave guide structure, comprises two half module substrate integrated wave guide power combiner B1 and a half module-full mould chip integrated wave guide power rate synthesizer B2; The output of described two half module substrate integrated wave guide power combiner B1 is connected with two inputs of described half module-full mould chip integrated wave guide power rate synthesizer B2 respectively, and the output of described half module-full mould chip integrated wave guide power rate synthesizer B2 is transitioned into the output microstrip line by trapezoidal microstrip transition line B3 again.
Described half module substrate integrated wave guide 2 grades are divided two outputs of 180 degree power splitter A3 to pass through respectively amplifier separately and are connected with two inputs of described half module substrate integrated wave guide power combiner B1.Whole power combiner structure is the center line symmetry; Two half module substrate integrated wave guide power combiner B1 of the synthetic export structure B of described power form the semi-surrounding structure of dividing power splitter A3 to two half module substrate integrated wave guides, 2 grades; make the synthetic export structure B of described power and described input signal merit separation structure A form embedded combination, the deflation on implementation structure.
In technique scheme,
1, the input microstrip line characteristic impedance of minute power splitter A1 such as described Y type microstrip line 2 is 50 ohm, and the characteristic impedance of two output branch road microstrip lines is 100 ohm; The characteristic impedance of described output microstrip line is 50 ohm.
2, in minute power splitter A3 such as described half module substrate integrated wave guide 2 two outputs between distance and described half module substrate integrated wave guide power combiner B1 in two inputs between distance equate; after the two-way input signal that guarantees described half module substrate integrated wave guide power combiner B1 of take is synthetic, differ as zero, thereby obtain maximum power stage.
3,, in minute power splitter A3 such as described half module substrate integrated wave guide 2, near near the electric wall of two outputs, having two metallization adjustment holes, divide the two-way amplitude output signal of power splitter A3 to equate to guarantee described half module substrate integrated wave guide 2 grades as far as possible.
4, in described half module substrate integrated wave guide power combiner B1; near near the electric wall of two inputs, having two metallization adjustment holes, divide the signal of the two-way constant amplitude fixed phase difference of power splitter A3 output in described half module substrate integrated wave guide power combiner B1, to synthesize and differ the mono-road signal into Ling De after amplifier amplifies to guarantee described half module substrate integrated wave guide 2 grades as far as possible.
5,, in described half module substrate integrated wave guide power combiner B1, near the electric wall near synthetic output, be provided with three perceptual through holes of metallization to improve the power combined coefficient and to reduce return loss.
The course of work of the present invention can be described below:
Y type microstrip line 2 grades divide power splitter A1 that input signal constant amplitude homophase merit is divided into to upper and lower two paths of signals; the two paths of signals that upper and lower two paths of signals divides power splitter A3 constant amplitude merit to be divided into two-way constant amplitude fixed phase difference by two half module substrate integrated wave guides, 2 grades respectively again, amount to four road signal S1, S2, S3 and S4.Wherein S1 and S3 constant amplitude homophase, S2 and S4 constant amplitude homophase; Differing between S1 and S2 equals differing between S3 and S4.S1 and S2 are amplified into the half module substrate integrated wave guide power combiner B1 of top through amplifier separately respectively, and S3 and S4 are amplified into following half module substrate integrated wave guide power combiner B1 through amplifier separately respectively.Due to half module substrate integrated wave guide 2 grades divide two outputs in power splitter A3 between distance and half module substrate integrated wave guide power combiner B1 in two inputs between distance equate, make the two-way input signal constant amplitude of half module substrate integrated wave guide power combiner B1 be combined to together.Output after the two-way constant amplitude that upper and lower two half module substrate integrated wave guide power combiner B1 obtain is synthetic finally by full mould chip integrated wave guide power rate synthesizer B2 with the signal be combined to.
It should be noted that; half module substrate integrated wave guide 2 grades divide two outputs in power splitter A3 between distance and half module substrate integrated wave guide power combiner B1 in two inputs between distance can be designed to quarter-wave, half-wavelength or four/three-wavelength according to the real work wave band, in the situation that guarantee be combined to size and the path loss that output reduces whole device as far as possible.
The present invention compared with prior art, has the following advantages:
(1) the present invention has the advantage that size is little.The output synthesizer adopts the semi-surrounding form, can form embedded shrunk type structure with the input power splitter, and, under the prerequisite that does not affect performance, can effectively reduce the size of circuit.
(2) the present invention has the advantage on performance.The present invention mainly adopts substrate integrated wave guide structure, compares the microstrip structure differential loss little, and power capacity is high.Due to its compact center line symmetrical structure, the path that makes its synthetic signal pass through is identical, has well improved the power combined coefficient.
(3) the present invention has the advantage that cost is low.The planar circuit form that circuit substrate integrated waveguide of the present invention combines with microstrip circuit, adopt very ripe PCB technique now, makes this circuit production cost low, is convenient to application and popularization in Practical Project.
(4) the present invention has lightweight advantage.Adopt substrate integrated wave guide structure, this structure is planar circuit, can effectively reduce weight with respect to metal waveguide structure.
(5) in the present invention, circuit belongs to planar circuit, has the advantages that to transplant conveniently and be convenient to the system integration.
The accompanying drawing explanation
Fig. 1 is existing a kind of half module-full mould substrate integrated wave guide structure power synthesis amplifier structural representation.
Fig. 2 is the S parameter amplitude test result of power synthesis amplifier shown in Figure 1.Wherein, S
11The representative reflection, S
21Represent differential loss.
Fig. 3 is the wave band of the Ka based on substrate integration wave-guide power combiner structural representation provided by the invention.
Fig. 4 is the S parameter amplitude test result of the wave band of the Ka based on substrate integration wave-guide power combiner provided by the invention.Wherein, S
11The representative reflection, S
21Represent differential loss.
Embodiment
Ka wave band of the present invention based on the shrunk type power combiner structured flowchart of substrate integration wave-guide as shown in Figure 3.Its embodiment is as follows:
1) the Y type microstrip line 2 grades design that divides power splitter A1, due to reality test and 50 ohm of interfaces of most interlock circuit employing, input micro-band impedance and adopt 50 ohm (Ka wave band 50 ohm microstrip live width 0.78mm), in order to realize impedance matching, the micro-band impedance of output in parallel is 100 ohm (Ka wave band 100 ohm microstrip live width 0.21mm).
2) Y type microstrip line 2 grades divide power splitter A1 and half module substrate integrated wave guide 2 etc. to divide the gradual change microstrip line A2 that crosses between power splitter A3 to adopt trapezoidal transition, and through the HFSS simulation optimization, the trapezoidal transition upper base is respectively 0.21mm and 1.4mm with going to the bottom; Trapezoidal microstrip transition line B3 upper base between full mould substrate integration wave-guide and output microstrip line is respectively 0.78mm and 3.2mm with going to the bottom.
3) the half module substrate integrated wave guide 2 grades design that divides power splitter A3; first rejection condition according to the half module substrate integrated wave guide higher mode; selecting its width is 3.6mm; to differ be 180 degree in fixing output again; the distance of regulating between two output ports is half guide wavelength (3.3mm), and near two metallization adjustment holes the electric wall of regulation output end make its constant amplitude merit divide output.
4) half module substrate integrated wave guide power combiner B1 and half module substrate integrated wave guide 2 etc. divide the parameter designing such as power splitter A3 employing.
5) design of half module-full mould chip integrated wave guide power rate synthesizer B2; the same inhibition of considering higher mode; selecting its width is 7.1mm, and T-shaped structure is adopted in half module-full mould transition, and improves the output combined coefficient and reduce return loss with both sides and 3 middle perceptual through holes.
As shown in Figure 4, reflection-10dB bandwidth is 5.2GHz (32.8GHz-38GHz) to the actual processing of the present invention test data, and differential loss is less than 3dB in 33.2GHz-37.8GHz, reaches the minimum 2.0dB that is at the 34.8GHz differential loss.
Claims (6)
1. the wave band of the Ka based on a substrate integration wave-guide power combiner, comprise that input signal merit separation structure (A) and power synthesize export structure (B); It is characterized in that:
Described input signal merit separation structure (A) is micro-band-half module substrate integrated wave guide hybrid circuit structure, comprise two-stage merit separation structure: first order merit separation structure is that Y type microstrip line 2 grades are divided power splitter (A1), and second level merit separation structure is that two half module substrate integrated wave guides, 2 grades are divided power splitter (A3); Described Y type microstrip line 2 grades divide two output branch roads of power splitter (A1) by gradual change microstrip line (A2), to be connected to the input that two half module substrate integrated wave guides, 2 grades are divided power splitter (A3) respectively, and two half module substrate integrated wave guide 2 grades are divided power splitter A3 to arrange back-to-back and export to two outsides;
It is half module-full mould substrate integrated wave guide structure that described power synthesizes export structure (B), comprises two half module substrate integrated wave guide power combiners (B1) and a half module-full mould chip integrated wave guide power rate synthesizer (B2); The output of described two half module substrate integrated wave guide power combiners (B1) is connected with two inputs of described half module-full mould chip integrated wave guide power rate synthesizer (B2) respectively, and the output of described half module-full mould chip integrated wave guide power rate synthesizer (B2) is transitioned into the output microstrip line by trapezoidal microstrip transition line (B3) again;
Described two half module substrate integrated wave guides, 2 grades divide two outputs that single half module substrate integrated wave guide 2 grades in power splitter (A3) divide power splitter (A3) by amplifier separately, to be connected with two inputs of corresponding single half module substrate integrated wave guide power combiner (B1) in described two half module substrate integrated wave guide power combiners (B1) respectively; Whole power combiner structure is the center line symmetry; Two half module substrate integrated wave guide power combiners (B1) that described power synthesizes export structure (B) form the semi-surrounding structure of dividing power splitter (A3) to two half module substrate integrated wave guides, 2 grades; make described power synthesize export structure (B) and form embedded combination, the deflation on implementation structure with described input signal merit separation structure (A).
2. the wave band of the Ka based on substrate integration wave-guide power combiner according to claim 1, it is characterized in that, it is 50 ohm that described Y type microstrip line 2 grades are divided the input microstrip line characteristic impedance of power splitter (A1), and the characteristic impedance of two output branch road microstrip lines is 100 ohm; The characteristic impedance of described output microstrip line is 50 ohm.
3. the wave band of the Ka based on substrate integration wave-guide power combiner according to claim 1, it is characterized in that, described two half module substrate integrated wave guides, 2 grades divide the distance between two inputs of corresponding single half module substrate integrated wave guide power combiner (B1) in distance and described two the half module substrate integrated wave guide power combiners (B1) between two outputs that single half module substrate integrated wave guide 2 grades in power splitter (A3) divide power splitter (A3) to equate, after the two-way input signal that guarantees described half module substrate integrated wave guide power combiner B1 of take is synthetic, differ as zero, thereby obtain maximum power stage.
4. the wave band of the Ka based on substrate integration wave-guide power combiner according to claim 1; it is characterized in that; described two half module substrate integrated wave guides, 2 grades divide single half module substrate integrated wave guide 2 grades in power splitter (A3) to divide in power splitter (A3); near near the electric wall of two outputs, having two metallization adjustment holes, divide the two-way amplitude output signal of power splitter (A3) to equate to guarantee half module substrate integrated wave guide 2 grades.
5. the wave band of the Ka based on substrate integration wave-guide power combiner according to claim 1; it is characterized in that; in described half module substrate integrated wave guide power combiner (B1); near near the electric wall of two inputs, having two metallization adjustment holes, divide the signal of the two-way constant amplitude fixed phase difference of power splitter (A3) output in described half module substrate integrated wave guide power combiner (B1), to synthesize and differ the mono-road signal into Ling De after amplifier amplifies to guarantee described half module substrate integrated wave guide 2 grades.
6. the wave band of the Ka based on substrate integration wave-guide power combiner according to claim 1; it is characterized in that; in described half module substrate integrated wave guide power combiner (B1), near the electric wall near synthetic output, be provided with three perceptual through holes of metallization to improve the power combined coefficient and to reduce return loss.
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1877903A (en) * | 2006-07-10 | 2006-12-13 | 东南大学 | Hemi-membrane substrate integrated waveguide |
| CN1925211A (en) * | 2006-09-22 | 2007-03-07 | 东南大学 | Half-modular substrate integral wave guide filter |
| CN202275911U (en) * | 2011-10-26 | 2012-06-13 | 电子科技大学 | Ka-band power combiner based on substrate integrated waveguide (SIW) |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1877903A (en) * | 2006-07-10 | 2006-12-13 | 东南大学 | Hemi-membrane substrate integrated waveguide |
| CN1925211A (en) * | 2006-09-22 | 2007-03-07 | 东南大学 | Half-modular substrate integral wave guide filter |
| CN202275911U (en) * | 2011-10-26 | 2012-06-13 | 电子科技大学 | Ka-band power combiner based on substrate integrated waveguide (SIW) |
Non-Patent Citations (2)
| Title |
|---|
| Ke Wu,.etc.The Substrate Integrated Circuits - A New Concept for High-Frequency Electronics and Optoelectronics.《Telecommunications in Modern Satellite, Cable and Broadcasting Service, 2003. TELSIK 2003.6th International Conference on》.2003,全文. |
| Ke Wu,.etc.The Substrate Integrated Circuits- A New Concept for High-Frequency Electronics and Optoelectronics.《Telecommunications in Modern Satellite, Cable and Broadcasting Service, 2003. TELSIK 2003.6th International Conference on》.2003,全文. * |
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