CN100412228C - Composite reinforcing and treating method for alumium or alumium alloy substrate surface through ion implantation and deposition - Google Patents
Composite reinforcing and treating method for alumium or alumium alloy substrate surface through ion implantation and deposition Download PDFInfo
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- CN100412228C CN100412228C CNB2006100101366A CN200610010136A CN100412228C CN 100412228 C CN100412228 C CN 100412228C CN B2006100101366 A CNB2006100101366 A CN B2006100101366A CN 200610010136 A CN200610010136 A CN 200610010136A CN 100412228 C CN100412228 C CN 100412228C
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Abstract
The present invention discloses a composite intensifying processing method for injecting and depositing the ions of the surface of the basal body of aluminum or aluminum alloy, which relates to a composite intensifying processing method for injecting and depositing the ions of the surface of a metal material. The present invention solves the problems that the residual stress between a diamond carbon film and the basal body of aluminum or aluminum alloy is large, the binding force and the bearing capacity between the diamond carbon film and the basal body of the aluminum or the aluminum alloy are poor, the abrasion resistance of DLC is low under the condition of high speed and heavy load, and the DLC is easily peeled from the basal body of the aluminum or the aluminum alloy. A synthetic method is carried out according to the following steps that (1) the aluminum or the aluminum alloy is leaned in an ultrasonic mode; (2) the argon ions of the aluminum or aluminum alloy are cleaned in a sputtering mode; (3) Ti ions are injected; (4) the Ti is deposited by a PIIID method; (5) TiN is deposited by the PIIID method; (6) Ti (CN) is deposited by the PIIID method; (7) TiC is deposited by the PIIID method; (8) the diamond carbon film is synthetized, namely that the aluminum or the aluminum alloy having the surface with multilayer gradient films is obtained; the step (2) to step (8) are carried out in a vacuum chamber. The abrasion life of the DLC on the multilayer gradient films is more than 10 times longer than that of monolayer DLC of which the thickness is the same as the thickness of the DLC, and the friction coefficient of the DLC is below 0.1.
Description
Technical field
The present invention relates to a kind of metal material surface ion implantation and deposition complex intensifying treatment process.
Background technology
Aluminum or aluminum alloy is owing to light weight, specific tenacity height, be widely used in industrial circles such as Aeronautics and Astronautics, automobile and microelectronics, but the requirement to the aluminum or aluminum alloy surface is also more and more higher, because the aluminum or aluminum alloy surface hardness is low, abrasion resistance properties is poor, so need surface Hardening Treatment to improve its surface property.Excellent properties such as diamond-like carbon film (DLC) has the hardness height, frictional coefficient is low, thermal conductivity good, chemical stability is good, depositional area is big, and face is smooth smooth, is the desired coating material of material surface modifying.But since the difference of aluminium and aluminium alloy and diamond-like carbon film (DLC) performance and composition cause the diamond-like carbon film (DLC) that directly forms and the unrelieved stress between the matrix on the aluminum or aluminum alloy surface greatly, bonding force and supporting capacity be poor, diamond-like carbon film (DLC) abrasion resistance properties under the high-speed overload condition is low, easily peels off from the aluminum or aluminum alloy matrix.
Summary of the invention
The objective of the invention is that unrelieved stress is big in order to solve between diamond-like carbon film (DLC) and the aluminum or aluminum alloy matrix, bonding force and supporting capacity be poor, diamond-like carbon film abrasion resistance properties under the high-speed overload condition is low, easy problem of peeling off, and a kind of aluminum or aluminum alloy matrix surface ion implantation and deposition complex intensifying treatment process that provides from the aluminum or aluminum alloy matrix.Aluminum or aluminum alloy matrix surface ion implantation and deposition complex intensifying treatment process is being carried out according to the following steps: (one) aluminum or aluminum alloy purity all 〉=99.9% acetone and alcoholic acid solution in carry out ultrasonic cleaning successively; (2) aluminum or aluminum alloy carries out the argon plasma sputter clean, and the argon gas flow is 50～80sccm, and operating air pressure is 2.0 * 10
-1～8.0 * 10
-1Pa, the bias voltage amplitude is 4～8kV, and the bias pulse width is 20～60 μ s, and pulse-repetition is 50～100Hz, radio frequency power 300～600W, the treatment time is 20～30min; (3) aluminum or aluminum alloy is carried out titanium ion and inject, to be 90%～99.999% titanium by purity produce as the magnetic filtered pulse cathode arc source of negative electrode the titanium plasma body, and it is 2.0 * 10 that titanium ion injects operating air pressure
-2～6.0 * 10
-2Pa, minor arc voltage are 40～80V, and the minor arc pulse width is 100～1000 μ s, the bias pulse width is than big 100～200 μ s of minor arc pulse width, the bias voltage amplitude is 20～30kV, and the bias pulse frequency is all 50～100Hz mutually with the minor arc pulse-repetition, and the treatment time is 0.5～2.0h; (4) PIIID method depositing Ti settled layer: to be 90%～99.999% titanium by purity produce as the magnetic filtered pulse cathode arc source of negative electrode the titanium plasma body, and Ti deposition operating air pressure is 2.0 * 10
-2～6.0 * 10
-2Pa, the bias voltage amplitude is 10～20kV, and the bias pulse width is 20～60 μ s, and the bias pulse frequency is all 50～100Hz mutually with the minor arc pulse-repetition, and minor arc voltage is 40～80V, and the minor arc pulsewidth is 1～3ms, and the treatment time is 1.0～2.0h; (5) PIIID method depositing TiN settled layer: the N plasma body is produced by radio frequency source, and to be 90%～99.999% titanium by purity produce as the magnetic filtered pulse cathode arc source of negative electrode the Ti plasma body, and operating air pressure is 2.0 * 10
-1～6.0 * 10
-1Pa, the bias voltage amplitude is 10～20kV, the bias pulse width is 20～60 μ s, the bias pulse frequency is all 50～100Hz mutually with the minor arc pulse-repetition, and minor arc voltage is 40～80V, and the minor arc pulsewidth is 1～3ms, radio frequency power 300～600W, the treatment time is 1.0～8.0h; (6) PIIID method depositing Ti (CN) settled layer: C plasma body and N plasma body are produced by radio frequency source, and to be 90%～99.999% titanium by purity produce as the magnetic filtered pulse cathode arc source of negative electrode the Ti plasma body, and operating air pressure is 2.0 * 10
-1～6.0 * 10
-1Pa, the bias voltage amplitude is 10～20kV, the bias pulse width is 20～60 μ s, the bias pulse frequency is all 50～100Hz mutually with the minor arc pulse-repetition, and minor arc voltage is 40～80V, and the minor arc pulsewidth is 1～3ms, radio frequency power 300～600W, the treatment time is 1.0～8.0h; (7) PIIID method depositing Ti C settled layer: the C plasma body is produced by radio frequency source, and to be 90%～99.999% titanium by purity produce as the magnetic filtered pulse cathode arc source of negative electrode the Ti plasma body, and operating air pressure is 2.0 * 10
-1～6.0 * 10
-1Pa, the bias voltage amplitude is 10～20kV, the bias pulse width is 20～60 μ s, the bias pulse frequency is all 50～100Hz mutually with the minor arc pulse-repetition, and minor arc voltage is 40～80V, and the minor arc pulsewidth is 1～3ms, radio frequency power 300～600W, the treatment time is 1.0～8.0h; (8) synthetic diamond-like carbon film, diamond-like carbon film are that 90%～99.999% graphite produces by negative electrode magnetic filtered pulse cathode arc source by purity, and operating air pressure is 2.0 * 10
-2～6.0 * 10
-2Pa, the bias voltage amplitude is 10～20kV, the bias pulse width is 20～60 μ s, the bias pulse frequency is all 50～100Hz mutually with the minor arc pulse-repetition, minor arc voltage is 40～80V, the minor arc pulsewidth is 1～2ms, and the treatment time is 1.0～10.0h, promptly obtains the aluminum or aluminum alloy that there is the multi-gradient film on the surface; Wherein step (two) is carried out in vacuum chamber to step (eight), vacuum chamber base vacuum degree 1.0 * 10
-4～4.0 * 10
-3Pa.Multi-gradient film of the present invention is made up of titanium ion input horizon, Ti settled layer, TiN settled layer, Ti (CN) settled layer, TiC settled layer and diamond-like carbon film from inside to outside successively.The wear-out life of diamond-like carbon film among the present invention on the multi-gradient film under fully loaded transportation condition improves more than 10 times than the individual layer diamond-like carbon film of aluminum or aluminum alloy surperficial directly formation, same thickness, and frictional coefficient is lower than 0.1, and (the ball mill decreases the test conditions of test: to mill part material is Si
3N
4, load is 500g, rotating speed is 200r/min).
It is ion implantation that the present invention at first carries out Ti at the aluminum or aluminum alloy matrix surface, forms titanium aluminium and mix layer mutually, improved the bonding force of multi-gradient film and aluminum or aluminum alloy matrix; Then formed gradient-structure on composition and the performance by the sedimentary Ti of PIIID method, TiN, Ti (CN), TiC multi-gradient settled layer and outer field DLC, outer DLC and the difference of aluminum or aluminum alloy matrix on composition and performance have been reduced, thereby slowly-releasing unrelieved stress, improved the bonding force of multi-gradient film and aluminum or aluminum alloy matrix.The multi-gradient settled layer has very strong supporting capacity, make aluminum or aluminum alloy matrix under the situation of high-speed overload, still have the advantages of good abrasion performance, also improved the hardness and the supporting capacity on aluminum or aluminum alloy matrix surface and inferior surface simultaneously through intensive treatment.The present invention has adopted plasma immersion ion to inject and deposition (Plasma Immersion IonImplantation and Deposition, PIIID, or claim comprehensive ion implantation and deposition) method, this method is directly pending workpiece to be immersed in the plasma body, applies the ion implantation and deposition intensive treatment that minor arc pulse and bias pulse are realized workpiece surface then on workpiece; This technological method has overcome that traditional beamline ion implanters is injected and the direct projection restriction of Ion Beam Enhanced Deposit Technology, again since the bombardment of energetic ion make sedimentary rete have the compactness and the bonding force of excellence.Adopt the PIIID method to obtain strengthening layer, and can realize the batch processing of part, be with a wide range of applications in the surface strengthening field at complex-shaped piece surface with high-bond and excellent surface properties.
Description of drawings
Fig. 1 carries out observation by light microscope figure after the scratch test to the individual layer DLC that aluminum substrate surface directly forms, and Fig. 2 carries out observation by light microscope figure after the scratch test to aluminum substrate surface multi-gradient film among the present invention.
Embodiment
Embodiment one: present embodiment aluminum or aluminum alloy matrix surface ion implantation and deposition complex intensifying treatment process is being carried out according to the following steps: (one) aluminum or aluminum alloy purity all 〉=99.9% acetone and alcoholic acid solution in carry out ultrasonic cleaning successively; (2) aluminum or aluminum alloy carries out the argon plasma sputter clean, and the argon gas flow is 50～80sccm, and operating air pressure is 2.0 * 10
-1～8.0 * 10
-1Pa, the bias voltage amplitude is 4～8kV, and the bias pulse width is 20～60 μ s, and pulse-repetition is 50～100Hz, radio frequency power 300～600W, the treatment time is 20～30min; (3) aluminum or aluminum alloy is carried out titanium ion and inject, to be 90%～99.999% titanium by purity produce as the magnetic filtered pulse cathode arc source of negative electrode the titanium plasma body, and it is 2.0 * 10 that titanium ion injects operating air pressure
-2～6.0 * 10
-2Pa, minor arc voltage are 40～80V, and the minor arc pulse width is 100～1000 μ s, the bias pulse width is than big 100～200 μ s of minor arc pulse width, the bias voltage amplitude is 20～30kV, and the bias pulse frequency is all 50～100Hz mutually with the minor arc pulse-repetition, and the treatment time is 0.5～2.0h; (4) PIIID method depositing Ti settled layer: to be 90%～99.999% titanium by purity produce as the magnetic filtered pulse cathode arc source of negative electrode the titanium plasma body, and Ti deposition operating air pressure is 2.0 * 10
-2～6.0 * 10
-2Pa, the bias voltage amplitude is 10～20kV, and the bias pulse width is 20～60 μ s, and the bias pulse frequency is all 50～100Hz mutually with the minor arc pulse-repetition, and minor arc voltage is 40～80V, and the minor arc pulsewidth is 1～3ms, and the treatment time is 1.0～2.0h; (5) PIIID method depositing TiN settled layer: the N plasma body is produced by radio frequency source, and to be 90%～99.999% titanium by purity produce as the magnetic filtered pulse cathode arc source of negative electrode the Ti plasma body, and operating air pressure is 2.0 * 10
-1～6.0 * 10
-1Pa, the bias voltage amplitude is 10～20kV, the bias pulse width is 20～60 μ s, the bias pulse frequency is all 50～100Hz mutually with the minor arc pulse-repetition, and minor arc voltage is 40～80V, and the minor arc pulsewidth is 1～3ms, radio frequency power 300～600W, the treatment time is 1.0～8.0h; (6) PIIID method depositing Ti (CN) settled layer: C plasma body and N plasma body are produced by radio frequency source, and to be 90%～99.999% titanium by purity produce as the magnetic filtered pulse cathode arc source of negative electrode the Ti plasma body, and operating air pressure is 2.0 * 10
-1～6.0 * 10
-1Pa, the bias voltage amplitude is 10～20kV, the bias pulse width is 20～60 μ s, the bias pulse frequency is all 50～100Hz mutually with the minor arc pulse-repetition, and minor arc voltage is 40～80V, and the minor arc pulsewidth is 1～3ms, radio frequency power 300～600W, the treatment time is 1.0～8.0h; (7) PIIID method depositing Ti C settled layer: the C plasma body is produced by radio frequency source, and to be 90%～99.999% titanium by purity produce as the magnetic filtered pulse cathode arc source of negative electrode the Ti plasma body, and operating air pressure is 2.0 * 10
-1～6.0 * 10
-1Pa, the bias voltage amplitude is 10～20kV, the bias pulse width is 20～60 μ s, the bias pulse frequency is all 50～100Hz mutually with the minor arc pulse-repetition, and minor arc voltage is 40～80V, and the minor arc pulsewidth is 1～3ms, radio frequency power 300～600W, the treatment time is 1.0～8.0h; (8) synthetic diamond-like carbon film, diamond-like carbon film are that 90%～99.999% graphite produces by negative electrode magnetic filtered pulse cathode arc source by purity, and operating air pressure is 2.0 * 10
-2～6.0 * 10
-2Pa, the bias voltage amplitude is 10～20kV, the bias pulse width is 20～60 μ s, the bias pulse frequency is all 50～100Hz mutually with the minor arc pulse-repetition, minor arc voltage is 40～80V, the minor arc pulsewidth is 1～2ms, and the treatment time is 1.0～10.0h, promptly obtains the aluminum or aluminum alloy that there is the multi-gradient film on the surface; Wherein step (two) is carried out in vacuum chamber to step (eight), vacuum chamber base vacuum degree 1.0 * 10
-4～4.0 * 10
-3Pa.
Argon plasma in the present embodiment step (two) is produced by the radio-frequency antenna in the vacuum chamber, and step (two) can be removed the impurity of matrix surface.
Carry out the cut simultaneous test, the individual layer DLC that directly forms on aluminum substrate surface and to carry out loading rate equally on the multi-gradient film by present embodiment synthetic (matrix is an aluminium) be 20N/min, ultimate load is 60N, and cut speed is the cut process of 2mm/min.By observation by light microscope, disengaging has taken place in the rete of cut both sides and matrix among Fig. 1, has formed fold, and in cut inside, disengaging has just taken place the initial period rete; The cut both sides do not deform and the rete peeling phenomenon substantially among Fig. 2, and in the cut process, have still kept rete in the cut, interlayer has only taken place peeled off.Unrelieved stress is big between test-results explanation individual layer DLC and matrix, and the bonding force of film and matrix is poor; Present embodiment synthetic multi-gradient film and matrix have extraordinary bonding properties.
Embodiment two: the difference of present embodiment and embodiment one is: the time of twice ultrasonic cleaning is 8～15min in the step ().Other step is identical with embodiment one.
Embodiment three: the difference of present embodiment and embodiment one is: the N plasma body is generated by the nitrogen that feeds vacuum chamber.Other is identical with embodiment one.
Embodiment four: the difference of present embodiment and embodiment one is: the C plasma body is by at room temperature generating for the gasiform hydrocarbon polymer.Other is identical with embodiment one.
Embodiment five: the difference of present embodiment and embodiment four is: hydrocarbon polymer is methane, ethene or acetylene.Other is identical with embodiment four.
Embodiment six: the difference of present embodiment and embodiment four is: hydrocarbon polymer is an acetylene.Other is identical with embodiment four.
Embodiment seven: the difference of present embodiment and embodiment one is: aluminium alloy is aluminum-copper alloy, aluminum magnesium alloy, aluminum silicon alloy, alumal, Aludur or aluminium zinc-magnesium copper alloy.Other is identical with embodiment one.
Embodiment eight: the difference of present embodiment and embodiment one is: step (two) is carried out in vacuum chamber to step (eight), vacuum chamber base vacuum degree 2.0 * 10
-4～3.0 * 10
-3Pa.Other step is identical with embodiment one.
Embodiment nine: the difference of present embodiment and embodiment one is: operating air pressure is 3.0 * 10 in the step (three)
-2～5.0 * 10
-2Pa, minor arc voltage are 50～70V, and the minor arc pulse width is 200～900 μ s, the bias pulse width is than big 100～200 μ s of minor arc pulse width, the bias voltage amplitude is 22～28kV, and the bias pulse frequency is all 60～90Hz mutually with the minor arc pulse-repetition, and the treatment time is 1.0～1.5h.Other step is identical with embodiment one.
Embodiment ten: the difference of present embodiment and embodiment one is: operating air pressure is 3.0 * 10 in the step (four)
-2～5.0 * 10
-2Pa, the bias voltage amplitude is 12～18kV, and the bias pulse width is 30～50 μ s, and the bias pulse frequency is all 60～90Hz mutually with the minor arc pulse-repetition, and minor arc voltage is 50～70V, and the minor arc pulsewidth is 1.5～2.5ms, and the treatment time is 1.2～1.8h.Other step is identical with embodiment one.
Embodiment 11: the difference of present embodiment and embodiment one is: operating air pressure is 3.0 * 10 in the step (five)
-1～5.0 * 10
-1Pa, the bias voltage amplitude is 12～18kV, the bias pulse width is 30～50 μ s, the bias pulse frequency is all 60～90Hz mutually with the minor arc pulse-repetition, and minor arc voltage is 50～70V, and the minor arc pulsewidth is 1.5～2.5ms, radio frequency power 400～500W, the treatment time is 2.0～7.0h.Other step is identical with embodiment one.
Embodiment 12: the difference of present embodiment and embodiment one is: operating air pressure is 3.0 * 10 in the step (six)
-1～5.0 * 10
-1Pa, the bias voltage amplitude is 12～18kV, the bias pulse width is 30～50 μ s, the bias pulse frequency is all 60～90Hz mutually with the minor arc pulse-repetition, and minor arc voltage is 50～70V, and the minor arc pulsewidth is 1.5～2.5ms, radio frequency power 400～500W, the treatment time is 2.0～7.0h.Other step is identical with embodiment one.
Embodiment 13: the difference of present embodiment and embodiment one is: operating air pressure is 3.0 * 10 in the step (seven)
-1～5.0 * 10
-1Pa, the bias voltage amplitude is 12～18kV, the bias pulse width is 30～50 μ s, the bias pulse frequency is all 60～90Hz mutually with the minor arc pulse-repetition, and minor arc voltage is 50～70V, and the minor arc pulsewidth is 1.5～2.5ms, radio frequency power 400～500W, the treatment time is 2.0～7.0h.Other step is identical with embodiment one.
Embodiment 14: the difference of present embodiment and embodiment one is: operating air pressure is 3.0 * 10 in the step (eight)
-2～5.0 * 10
-2Pa, the bias voltage amplitude is 12～18kV, and the bias pulse width is 30～50 μ s, and the bias pulse frequency is all 60～90Hz mutually with the minor arc pulse-repetition, and minor arc voltage is 50～70V, and the minor arc pulsewidth is 1.2～1.8ms, and the treatment time is 2.0～9.0h.Other step is identical with embodiment one.
Embodiment 15: the difference of present embodiment and embodiment one is: the argon gas flow is 55～75sccm in the step (two), and operating air pressure is 3.0 * 10
-1～7.0 * 10
-1Pa, the bias voltage amplitude is 5～7kV, and the bias pulse width is 25～55 μ s, and pulse-repetition is 60～90Hz, radio frequency power 400～500W, the treatment time is 21～29min.Other step is identical with embodiment one.
Embodiment 16: the difference of present embodiment and embodiment one is: step (two) is carried out in vacuum chamber to step (eight), vacuum chamber base vacuum degree 3.0 * 10
-4～2.0 * 10
-3Pa.Other step is identical with embodiment one.
Embodiment 17: present embodiment LY12 aluminium alloy matrix surface ion implantation and deposition complex intensifying is handled: (one) LY12 aluminium alloy is in 99.99% acetone and the alcoholic acid solution in purity and carries out the 10min ultrasonic cleaning successively; (2) the LY12 aluminium alloy carries out the argon plasma sputter clean, and the argon gas flow is 50sccm, and operating air pressure is 6.0 * 10
-1Pa, the bias voltage amplitude is 6kV, and the bias pulse width is 60 μ s, and pulse-repetition is 100Hz, radio frequency power 500W, the treatment time is 30min; (3) the LY12 alloy matrix aluminum is carried out titanium ion and inject, to be 99% titanium by purity produce as the magnetic filtered pulse cathode arc source of negative electrode the titanium plasma body, and it is 4.0 * 10 that titanium ion injects operating air pressure
-2Pa, minor arc voltage are 70V, and the minor arc pulse width is 200 μ s, and the bias pulse width is 300 μ s, and the bias voltage amplitude is 20kV, and the bias pulse frequency is all 50Hz mutually with the minor arc pulse-repetition, and the treatment time is 0.5; (4) PIIID method depositing Ti settled layer: to be 99% titanium by purity produce as the magnetic filtered pulse cathode arc source of negative electrode the titanium plasma body, and Ti deposition operating air pressure is 4.0 * 10
-2Pa, the bias voltage amplitude is 10kV, and the bias pulse width is 60 μ s, and the bias pulse frequency is all 50Hz mutually with the minor arc pulse-repetition, and minor arc voltage is 60V, and the minor arc pulsewidth is 2ms, and the treatment time is 1.0h; (5) PIIID method depositing TiN settled layer: the N plasma body is produced by radio frequency source, and to be 99% titanium by purity produce as the magnetic filtered pulse cathode arc source of negative electrode the Ti plasma body, and operating air pressure is 4.0 * 10
-1Pa, the bias voltage amplitude is 10kV, and the bias pulse width is 60 μ s, and the bias pulse frequency is all 50Hz mutually with the minor arc pulse-repetition, and minor arc voltage is 50V, the minor arc pulsewidth is 3ms, radio frequency power 500W, the treatment time is 1.0h; (6) PIIID method depositing Ti (CN) settled layer: C plasma body and N plasma body are produced by radio frequency source, and to be 99% titanium by purity produce as the magnetic filtered pulse cathode arc source of negative electrode the Ti plasma body, and operating air pressure is 4.0 * 10
-1Pa, the bias voltage amplitude is 10kV, and the bias pulse width is 60 μ s, and the bias pulse frequency is all 50Hz mutually with the minor arc pulse-repetition, and minor arc voltage is 50V, the minor arc pulsewidth is 3ms, radio frequency power 500W, the treatment time is 1.0h; (7) PIIID method depositing Ti C settled layer: the C plasma body is produced by radio frequency source, and to be 99% titanium by purity produce as the magnetic filtered pulse cathode arc source of negative electrode the Ti plasma body, and operating air pressure is 4.0 * 10
-1Pa, the bias voltage amplitude is 10kV, and the bias pulse width is 60 μ s, and the bias pulse frequency is all 50Hz mutually with the minor arc pulse-repetition, and minor arc voltage is 50V, the minor arc pulsewidth is 3ms, radio frequency power 500W, the treatment time is 1.0h; (8) synthetic diamond-like carbon film, diamond-like carbon film are that 99% graphite produces by negative electrode magnetic filtered pulse cathode arc source by purity, and operating air pressure is 4.0 * 10
-2Pa, the bias voltage amplitude is 20kV, and the bias pulse width is 60 μ s, and the bias pulse frequency is all 100Hz mutually with the minor arc pulse-repetition, and minor arc voltage is 70V, and the minor arc pulsewidth is 1ms, and the treatment time is 2h, promptly obtains the LY12 aluminium alloy that there is the multi-gradient film on the surface; Wherein step (two) is carried out in vacuum chamber to step (eight), vacuum chamber base vacuum degree 1.0 * 10
-3Pa; C plasma body among step (six) and (seven) is by C
2H
2Gas produces.
The complex intensifying multi-gradient film of the formation on the present embodiment LY12 alloy matrix aluminum carries out the ball mill and decreases test under the fully loaded transportation condition of 500g.Change the wear-resistant revolution of complex intensifying layer of the formation on the present embodiment LY12 alloy matrix aluminum＞60000, and frictional coefficient is lower than 0.1.
Claims (10)
1. aluminum or aluminum alloy matrix surface ion implantation and deposition complex intensifying treatment process is characterized in that aluminum or aluminum alloy matrix surface ion implantation and deposition complex intensifying treatment process carrying out according to the following steps: (one) aluminum or aluminum alloy purity all 〉=99.9% acetone and alcoholic acid solution in carry out ultrasonic cleaning successively; (2) aluminum or aluminum alloy carries out the argon plasma sputter clean, and the argon gas flow is 50～80sccm, and operating air pressure is 2.0 * 10
-1～8.0 * 10
-1Pa, the bias voltage amplitude is 4～8kV, and the bias pulse width is 20～60 μ s, and pulse-repetition is 50～100Hz, radio frequency power 300～600W, the treatment time is 20～30min; (3) aluminum or aluminum alloy is carried out titanium ion and inject, to be 90%～99.999% titanium by purity produce as the magnetic filtered pulse cathode arc source of negative electrode the titanium plasma body, and it is 2.0 * 10 that titanium ion injects operating air pressure
-2～6.0 * 10
-2Pa, minor arc voltage are 40～80V, and the minor arc pulse width is 100～1000 μ s, the bias pulse width is than big 100～200 μ s of minor arc pulse width, the bias voltage amplitude is 20～30kV, and the bias pulse frequency is all 50～100Hz mutually with the minor arc pulse-repetition, and the treatment time is 0.5～2.0h; (4) comprehensive ion implantation and deposition method depositing Ti settled layer: to be 90%～99.999% titanium by purity produce as the magnetic filtered pulse cathode arc source of negative electrode the titanium plasma body, and Ti deposition operating air pressure is 2.0 * 10
-2～6.0 * 10
-2Pa, the bias voltage amplitude is 10～20kV, and the bias pulse width is 20～60 μ s, and the bias pulse frequency is all 50～100Hz mutually with the minor arc pulse-repetition, and minor arc voltage is 40～80V, and the minor arc pulsewidth is 1～3ms, and the treatment time is 1.0～2.0h; (5) comprehensive ion implantation and deposition method depositing TiN settled layer: the N plasma body is produced by radio frequency source, and to be 90%～99.999% titanium by purity produce as the magnetic filtered pulse cathode arc source of negative electrode the Ti plasma body, and operating air pressure is 2.0 * 10
-1～6.0 * 10
-1Pa, the bias voltage amplitude is 10～20kV, the bias pulse width is 20～60 μ s, the bias pulse frequency is all 50～100Hz mutually with the minor arc pulse-repetition, and minor arc voltage is 40～80V, and the minor arc pulsewidth is 1～3ms, radio frequency power 300～600W, the treatment time is 1.0～8.0h; (6) comprehensive ion implantation and deposition method depositing Ti (CN) settled layer: C plasma body and N plasma body are produced by radio frequency source, to be 90%～99.999% titanium by purity produce as the magnetic filtered pulse cathode arc source of negative electrode the Ti plasma body, and operating air pressure is 2.0 * 10
-1～6.0 * 10
-1Pa, the bias voltage amplitude is 10～20kV, the bias pulse width is 20～60 μ s, the bias pulse frequency is all 50～100Hz mutually with the minor arc pulse-repetition, and minor arc voltage is 40～80V, and the minor arc pulsewidth is 1～3ms, radio frequency power 300～600W, the treatment time is 1.0～8.0h; (7) comprehensive ion implantation and deposition method depositing Ti C settled layer: the C plasma body is produced by radio frequency source, and to be 90%～99.999% titanium by purity produce as the magnetic filtered pulse cathode arc source of negative electrode the Ti plasma body, and operating air pressure is 2.0 * 10
-1～6.0 * 10
-1Pa, the bias voltage amplitude is 10～20kV, the bias pulse width is 20～60 μ s, the bias pulse frequency is all 50～100Hz mutually with the minor arc pulse-repetition, and minor arc voltage is 40～80V, and the minor arc pulsewidth is 1～3ms, radio frequency power 300～600W, the treatment time is 1.0～8.0h; (8) synthetic diamond-like carbon film, diamond-like carbon film are that 90%～99.999% graphite produces by negative electrode magnetic filtered pulse cathode arc source by purity, and operating air pressure is 2.0 * 10
-2～6.0 * 10
-2Pa, the bias voltage amplitude is 10～20kV, the bias pulse width is 20～60 μ s, the bias pulse frequency is all 50～100Hz mutually with the minor arc pulse-repetition, minor arc voltage is 40～80V, the minor arc pulsewidth is 1～2ms, and the treatment time is 1.0～10.0h, promptly obtains the aluminum or aluminum alloy that there is the multi-gradient film on the surface; Wherein step (two) is carried out in vacuum chamber to step (eight), vacuum chamber base vacuum degree 1.0 * 10
-4～4.0 * 10
-3Pa.
2. aluminum or aluminum alloy matrix surface ion implantation and deposition complex intensifying treatment process according to claim 1 is characterized in that the time of twice ultrasonic cleaning in the step () is 8～15min.
3. aluminum or aluminum alloy matrix surface ion implantation and deposition complex intensifying treatment process according to claim 1 is characterized in that the N plasma body is generated by the nitrogen that feeds vacuum chamber.
4. aluminum or aluminum alloy matrix surface ion implantation and deposition complex intensifying treatment process according to claim 1 is characterized in that the C plasma body is by at room temperature generating for the gasiform hydrocarbon polymer.
5. aluminum or aluminum alloy matrix surface ion implantation and deposition complex intensifying treatment process according to claim 4 is characterized in that hydrocarbon polymer is methane, ethene or acetylene.
6. aluminum or aluminum alloy matrix surface ion implantation and deposition complex intensifying treatment process according to claim 1 is characterized in that aluminium alloy is aluminum-copper alloy, aluminum magnesium alloy, aluminum silicon alloy, alumal, Aludur or aluminium zinc-magnesium copper alloy.
7. aluminum or aluminum alloy matrix surface ion implantation and deposition complex intensifying treatment process according to claim 1 is characterized in that step (two) carries out vacuum chamber base vacuum degree 2.0 * 10 to step (eight) in vacuum chamber
-4～3.0 * 10
-3Pa.
8. aluminum or aluminum alloy matrix surface ion implantation and deposition complex intensifying treatment process according to claim 1 is characterized in that operating air pressure is 3.0 * 10 in the step (three)
-2～5.0 * 10
-2Pa, minor arc voltage are 50～70V, and the minor arc pulse width is 200～900 μ s, the bias pulse width is than big 100～200 μ s of minor arc pulse width, the bias voltage amplitude is 22～28kV, and the bias pulse frequency is all 60～90Hz mutually with the minor arc pulse-repetition, and the treatment time is 1.0～1.5h.
9. aluminum or aluminum alloy matrix surface ion implantation and deposition complex intensifying treatment process according to claim 1 is characterized in that operating air pressure is 3.0 * 10 in the step (four)
-2～5.0 * 10
-2Pa, the bias voltage amplitude is 12～18kV, and the bias pulse width is 30～50 μ s, and the bias pulse frequency is all 60～90Hz mutually with the minor arc pulse-repetition, and minor arc voltage is 50～70V, and the minor arc pulsewidth is 1.5～2.5ms, and the treatment time is 1.2～1.8h.
10. aluminum or aluminum alloy matrix surface ion implantation and deposition complex intensifying treatment process according to claim 1 is characterized in that operating air pressure is 3.0 * 10 in the step (five)
-1～5.0 * 10
-1Pa, the bias voltage amplitude is 12～18kV, the bias pulse width is 30～50 μ s, the bias pulse frequency is all 60～90Hz mutually with the minor arc pulse-repetition, and minor arc voltage is 50～70V, and the minor arc pulsewidth is 1.5～2.5ms, radio frequency power 400～500W, the treatment time is 2.0～7.0h.
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