CN100411103C - 高电子迁移率晶体管电路t型栅制作方法 - Google Patents
高电子迁移率晶体管电路t型栅制作方法 Download PDFInfo
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- CN100411103C CN100411103C CNB2005100117389A CN200510011738A CN100411103C CN 100411103 C CN100411103 C CN 100411103C CN B2005100117389 A CNB2005100117389 A CN B2005100117389A CN 200510011738 A CN200510011738 A CN 200510011738A CN 100411103 C CN100411103 C CN 100411103C
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CNB2005100117389A CN100411103C (zh) | 2005-05-19 | 2005-05-19 | 高电子迁移率晶体管电路t型栅制作方法 |
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CNB2005100117389A CN100411103C (zh) | 2005-05-19 | 2005-05-19 | 高电子迁移率晶体管电路t型栅制作方法 |
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CN1866472A CN1866472A (zh) | 2006-11-22 |
CN100411103C true CN100411103C (zh) | 2008-08-13 |
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Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
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CN100524634C (zh) * | 2007-03-28 | 2009-08-05 | 中国科学院微电子研究所 | 一种制备晶体管t型纳米栅的方法 |
CN100543940C (zh) * | 2007-03-28 | 2009-09-23 | 中国科学院微电子研究所 | 一种制作晶体管t型纳米栅的方法 |
CN105118774B (zh) * | 2015-07-22 | 2018-03-30 | 中国电子科技集团公司第十三研究所 | 纳米t型栅的制作方法 |
CN107863291B (zh) * | 2017-11-08 | 2020-06-26 | 西安电子科技大学 | 一种制作t型栅结构的电子束光刻方法 |
CN109440067B (zh) * | 2018-11-05 | 2021-01-26 | 中国工程物理研究院电子工程研究所 | 一种利用斜蒸发加工薄膜结构的方法 |
CN112652540B (zh) * | 2020-07-01 | 2022-04-22 | 腾讯科技(深圳)有限公司 | 铟柱焊点的制备方法、芯片衬底及芯片 |
CN112271133A (zh) * | 2020-09-25 | 2021-01-26 | 华东光电集成器件研究所 | 一种基于三层胶的金属剥离方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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CN1121259A (zh) * | 1995-05-04 | 1996-04-24 | 中国科学院微电子中心 | 一种高电子迁移率晶体管器件<hemt>的自对准制作的方法 |
US5677089A (en) * | 1994-12-16 | 1997-10-14 | Electronics And Telecommunications Research Institute | Photomask for forming T-gate electrode of the semiconductor device |
US6294446B1 (en) * | 1996-04-04 | 2001-09-25 | Honda Giken Kogyo Kabushiki Kaisha | Methods of manufacturing a high electron mobility transistor with a T-shaped gate electrode |
CN1428870A (zh) * | 2001-12-28 | 2003-07-09 | 韩国电子通信研究院 | 假同晶高电子迁移率晶体管功率器件及其制造方法 |
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Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5677089A (en) * | 1994-12-16 | 1997-10-14 | Electronics And Telecommunications Research Institute | Photomask for forming T-gate electrode of the semiconductor device |
CN1121259A (zh) * | 1995-05-04 | 1996-04-24 | 中国科学院微电子中心 | 一种高电子迁移率晶体管器件<hemt>的自对准制作的方法 |
US6294446B1 (en) * | 1996-04-04 | 2001-09-25 | Honda Giken Kogyo Kabushiki Kaisha | Methods of manufacturing a high electron mobility transistor with a T-shaped gate electrode |
CN1428870A (zh) * | 2001-12-28 | 2003-07-09 | 韩国电子通信研究院 | 假同晶高电子迁移率晶体管功率器件及其制造方法 |
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