CN100399559C - Microelectrode short-circuit-proof squeegee structure - Google Patents
Microelectrode short-circuit-proof squeegee structure Download PDFInfo
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- CN100399559C CN100399559C CNB2006100239003A CN200610023900A CN100399559C CN 100399559 C CN100399559 C CN 100399559C CN B2006100239003 A CNB2006100239003 A CN B2006100239003A CN 200610023900 A CN200610023900 A CN 200610023900A CN 100399559 C CN100399559 C CN 100399559C
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Abstract
The present invention relates to a microelectrode short-circuit-preventing squeegee structure which belongs to the microelectronic technical field. The present invention comprises a base part inlaid into a microelectrode gap and a convex part higher than microelectrodes. The base part fully fills the microelectrode gap, the length of the base part is the length of each microelectrode, the width of the base is the gap distance of the microelectrodes, and the height of the base is the height of each microelectrode. The length of the convex part is the length of each microelectrode, the width of the convex part is the gap distance of the microelectrodes, and the height of the convex part is 4 mu m to 8 mu m higher than each microelectrode. The best shape of the convex part is a needle tip shape, and side wings of the convex part are in a circular arc shape. The squeegee of the present invention can effectively prevent the short circuit of the circuit caused by the bridge connection of conducting particles of the gap of contiguous microelectrodes, and can also effectively prevent the short circuit of the circuit caused by the bridge connection of the conducting particles of a press connecting layer between the contiguous microelectrodes.
Description
Technical field
What the present invention relates to is a kind of structure of microelectronics technology, and specifically, what relate to is a kind of microelectrode short-circuit-proof squeegee structure.
Background technology
In semiconductor packages or liquid crystal display (LCD) field, anisotropy conductiving glue is directly used in semiconductor chip is installed on the substrate, for example chip is connected with LCD (or FPC).By hot pressing, the direct upside-down mounting of chip is being posted on the substrate of anisotropy conductiving glue.Clip the conducting particles of a plurality of compressive deformations between the pad of the microelectrode of chip and corresponding with it substrate, realize being electrically connected of upper and lower microelectrode by the conducting particles of these distortion.Chip and substrate integral body are solidified by the epoxy resin base material of anisotropy conductiving glue simultaneously, realize the mechanical support and the heat radiation of Electronic Packaging.When according to prior art chip and substrate being carried out packaging by hot pressing, microelectrode is bigger to the local pressure of the epoxy resin base material of anisotropy conductiving glue, so the trend of the Clearance Flow of the oriented microelectrode of conducting particles of anisotropy conductiving glue.Like this, when conducting particles forms bridging in the gap, the short circuit between the adjacent microelectrode will take place.Even use the conducting particles that insulating barrier is arranged, (during 5um～8um), the leaky between the microelectrode also is inevitable in this kind flow of conductive particle excess of imports narrow gap.Bridging mainly occurs in two positions: the crimping layer between microelectrode gap and two microelectrodes.
Through the literature search of prior art is found, Chinese patent application number is 03819570.4 to have announced a kind of microelectrode syndeton that can prevent the conducting particles short circuit.This method puts on the circuit board with circuit pattern with insulating film layer, with anisotropic-electroconductive adhesive they is carried out bondingly then, can effectively prevent conducting particles bridging between the microelectrode and the short circuit that takes place.But this kind syndeton is difficult to prevent the conducting particles bridging of crimping layer between the adjacent electrode, also has the probability of occurrence of certain short circuit.
Summary of the invention
The present invention is directed to the deficiencies in the prior art, a kind of microelectrode short-circuit-proof squeegee structure is provided, make it can be used for microelectrode and prevent short circuit.Insulation rubber of the present invention not only can effectively prevent the conducting particles bridging in adjacent microelectrode gap and the short circuit that takes place, can also effectively prevent the conducting particles bridging of crimping layer between the adjacent microelectrode and the short circuit that takes place.
The present invention is achieved by the following technical solutions, and squeegee structure of the present invention comprises: the base part and the projection that is higher than microelectrode that embed the microelectrode gap.Base part is with microelectrode gap complete filling, and length is microelectrode length, and width is the microelectrode clearance distance, highly is the microelectrode height.The length of projection is similarly microelectrode length, and width is the microelectrode clearance distance, highly for exceeding microelectrode 4um～8um.
Being shaped as tip-like, falling trapezoidal shape, rectangle, triangle of projection, wherein preferable shape is a tip-like, the flank of tip-like projection is a circular arc.
Among the present invention, when being packaging by hot pressing, the advantage that insulation rubber length is consistent with microelectrode length can significantly not change the flow regime of conducting particles, because other zone of chip does not cover insulation rubber.The preferable shape of the projection of insulation rubber is that the advantage of needle point shape is: less insulation rubber overflows into the articulamentum of microelectrode and substrate from the gap, prevents that conducting particles is extruded effective conducting region.
The present invention discloses a kind of squeegee structure that can be used for microelectrode and prevent short circuit, its main component is photoimageable epoxy (or other photosensitive resin, as polyimide resin).Microelectrode is realized electric and mechanical connection by the anisotropy conductiving glue and the squeegee structure of the present invention that contain conducting particles.This squeegee structure manufacturing process simple (comprising rotation gluing, uv-exposure, wet etching, cleaning and back baking), technological process has stronger actual operation.The present invention can make microelectrode catch more conducting particles, prevent simultaneously the conducting particles short circuit that causes because of little spacing effectively at microelectrode gap and crimping layer, and can prevent that conducting particles is extruded effective conducting region, thereby improve the connection reliability of microelectrode, make encapsulation technology to littler characteristic size (15um～20um) and narrower electrode gap (5um～8um) development.
Description of drawings
Fig. 1 is a structural representation of the present invention
Embodiment
As shown in Figure 1, the present invention includes: the base part 3 and the projection 4 that is higher than microelectrode 2 that embed microelectrode 2 gaps of chip 1.Base part 3 is with microelectrode 2 gap complete filling, and length is microelectrode 2 length, and width is microelectrode 2 clearance distances, highly is microelectrode 2 height.The length of projection 4 is similarly microelectrode 2 length, and width is microelectrode 2 clearance distances, highly for exceeding microelectrode 2 about 4um～8um.
Being shaped as tip-like, falling trapezoidal shape, rectangle, triangle of projection 4, wherein preferable shape is a tip-like, the flank of tip-like projection 4 is a circular arc.
When the preferred squeegee structure of application the present invention carried out packaging by hot pressing, the local pressure of the projection 4 of insulation rubber was bigger.And, insulation rubber after baking has later taken place partly solidified, intensity is much larger than the epoxy resin base material of uncured anisotropy conductiving glue, and mobile so extraordinary conducting particles just can more be caught by microelectrode 2 along the arc structure of the projection 4 of insulation rubber.So just can embody three advantages of structure of the present invention in this process: 1. prevent that flow of conductive particle from going into microelectrode 2 gaps and forming the gap bridging; 2. the separation conducting particles prevents to form the bridging of crimping layer; 3. the water conservancy diversion conducting particles makes microelectrode 2 can catch more conducting particles.
In the hot pressing of conducting particles distortion, the projection 4 of insulation rubber is compressive deformation thereupon also, after the abundant curing of the epoxy resin base material of anisotropy conductiving glue and insulation rubber, the insulating barrier that permanent formation microelectrode is 2 effectively prevents the short circuit of 2 of microelectrodes.
Claims (3)
1. microelectrode short-circuit-proof squeegee structure, comprise: embed the base part (3) in microelectrode (2) gap and be higher than the projection (4) of microelectrode (2), it is characterized in that, base part (3) is with microelectrode (2) gap complete filling, length is microelectrode (2) length, width is microelectrode (a 2) clearance distance, highly be microelectrode (2) highly; The length of projection (4) is similarly microelectrode (2) length, and width is microelectrode (a 2) clearance distance, highly for exceeding microelectrode (2) 4um～8um.
2. microelectrode short-circuit-proof squeegee structure according to claim 1 is characterized in that, projection (4) is shaped as tip-like, fall trapezoidal shape, rectangle or triangle.
3. according to claim 1 or 2 described microelectrode short-circuit-proof squeegee structures, it is characterized in that projection (4) is a tip-like, its flank is a circular arc.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006100239003A CN100399559C (en) | 2006-02-16 | 2006-02-16 | Microelectrode short-circuit-proof squeegee structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006100239003A CN100399559C (en) | 2006-02-16 | 2006-02-16 | Microelectrode short-circuit-proof squeegee structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1828878A CN1828878A (en) | 2006-09-06 |
| CN100399559C true CN100399559C (en) | 2008-07-02 |
Family
ID=36947152
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2006100239003A Expired - Fee Related CN100399559C (en) | 2006-02-16 | 2006-02-16 | Microelectrode short-circuit-proof squeegee structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100399559C (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112235942B (en) * | 2020-09-21 | 2021-10-22 | 广州国显科技有限公司 | Display module and display device |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11145562A (en) * | 1997-11-07 | 1999-05-28 | Sharp Corp | Semiconductor laser device |
| US6362641B2 (en) * | 1998-08-25 | 2002-03-26 | Nec Corporation | Integrated circuit device and semiconductor wafer having test circuit therein |
| CN1452241A (en) * | 2002-04-12 | 2003-10-29 | Nec化合物半导体器件株式会社 | Semiconductor device with soldering pad electrode connected to wire |
| CN1808710A (en) * | 2004-12-07 | 2006-07-26 | 三星电子株式会社 | Thin film transistor array panel and method for manufacturing the same |
-
2006
- 2006-02-16 CN CNB2006100239003A patent/CN100399559C/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11145562A (en) * | 1997-11-07 | 1999-05-28 | Sharp Corp | Semiconductor laser device |
| US6362641B2 (en) * | 1998-08-25 | 2002-03-26 | Nec Corporation | Integrated circuit device and semiconductor wafer having test circuit therein |
| CN1452241A (en) * | 2002-04-12 | 2003-10-29 | Nec化合物半导体器件株式会社 | Semiconductor device with soldering pad electrode connected to wire |
| CN1808710A (en) * | 2004-12-07 | 2006-07-26 | 三星电子株式会社 | Thin film transistor array panel and method for manufacturing the same |
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| Publication number | Publication date |
|---|---|
| CN1828878A (en) | 2006-09-06 |
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| C14 | Grant of patent or utility model | ||
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Granted publication date: 20080702 Termination date: 20110216 |