CN100388067C - Conductor structure and mfg. method thereof - Google Patents
Conductor structure and mfg. method thereof Download PDFInfo
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- CN100388067C CN100388067C CNB2005100727182A CN200510072718A CN100388067C CN 100388067 C CN100388067 C CN 100388067C CN B2005100727182 A CNB2005100727182 A CN B2005100727182A CN 200510072718 A CN200510072718 A CN 200510072718A CN 100388067 C CN100388067 C CN 100388067C
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- 239000010949 copper Substances 0.000 claims description 34
- 229910052802 copper Inorganic materials 0.000 claims description 33
- 230000001681 protective effect Effects 0.000 claims description 26
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 13
- 238000007747 plating Methods 0.000 claims description 12
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- 239000010941 cobalt Substances 0.000 claims description 10
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- 239000011733 molybdenum Substances 0.000 claims description 9
- 150000004767 nitrides Chemical class 0.000 claims description 9
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 8
- 230000015572 biosynthetic process Effects 0.000 claims description 8
- 229910052715 tantalum Inorganic materials 0.000 claims description 8
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- -1 nitrogenous silicon oxide compound Chemical class 0.000 claims description 6
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- 239000003989 dielectric material Substances 0.000 claims description 5
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- 229920002120 photoresistant polymer Polymers 0.000 claims description 5
- 239000010948 rhodium Substances 0.000 claims description 5
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 5
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- 229910052702 rhenium Inorganic materials 0.000 claims description 4
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 claims description 4
- 229910052703 rhodium Inorganic materials 0.000 claims description 4
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims description 4
- 229910052707 ruthenium Inorganic materials 0.000 claims description 4
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 claims description 4
- 238000000059 patterning Methods 0.000 claims description 3
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- 239000011521 glass Substances 0.000 description 4
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 4
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- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 3
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- BEQNOZDXPONEMR-UHFFFAOYSA-N cadmium;oxotin Chemical compound [Cd].[Sn]=O BEQNOZDXPONEMR-UHFFFAOYSA-N 0.000 description 2
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- 239000011787 zinc oxide Substances 0.000 description 2
- UMJICYDOGPFMOB-UHFFFAOYSA-N zinc;cadmium(2+);oxygen(2-) Chemical compound [O-2].[O-2].[Zn+2].[Cd+2] UMJICYDOGPFMOB-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- JUZTWRXHHZRLED-UHFFFAOYSA-N [Si].[Cu].[Cu].[Cu].[Cu].[Cu] Chemical compound [Si].[Cu].[Cu].[Cu].[Cu].[Cu] JUZTWRXHHZRLED-UHFFFAOYSA-N 0.000 description 1
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- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 description 1
- NJWNEWQMQCGRDO-UHFFFAOYSA-N indium zinc Chemical compound [Zn].[In] NJWNEWQMQCGRDO-UHFFFAOYSA-N 0.000 description 1
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
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Abstract
The present invention discloses a conducting wire structure which is suitable for display devices. The conducting wire structure comprises a transparent baseplate, a first blocking layer, a metallic layer and an optical activity sensitive protective layer, the first blocking layer is arranged on the baseplate; the metallic layer is arranged on the first blocking layer; the optical activity sensitive protective layer is arranged on the first blocking layer and is formed at both sides of the metallic layer. The present invention also discloses a method for manufacturing the conducting wire structure.
Description
Technical field
The present invention relates to a kind of conductor structure, particularly relate to a kind of copper conducting wire structure and manufacture method thereof that is applicable to display device, it can improve film coverage (film coverage) and simplify technology.
Background technology
Typical liquid crystal comprises: a thin film transistor (TFT) (thin-film transistor, TFT) substrate, an optical filter (color filter, CF) substrate and the liquid crystal layer between thin film transistor base plate and filter sheet base plate.Thin film transistor base plate has comprised a plurality of by pixel that data line and sweep trace constituted and by the pixel-driving circuit that a plurality of electronic component constituted, for example thin film transistor (TFT) and electric capacity.In traditional technology, the used material of lead (data line and sweep trace) that connects thin film transistor (TFT) is aluminium, chromium, molybdenum or tungsten, wherein because aluminium has higher electrical conductivity, is often used as gate line (sweep trace).Yet along with the raising of increase of LCD size and resolution, signal delay effect (resistance-capacitance RC delay effect) must further be improved it.Therefore, recently the fabricator replaces aluminum metal with copper has the trend of increase as the LCD conductor material, because the electrical conductivity of copper is higher than aluminium.
Yet copper is difficult to etching and wayward copper conductor edge taper (taper angle), causes the coverage (coverage) of subsequent thin film deposition to reduce.Moreover copper easily and pasc reaction and form copper silicide (as: Cu
3Si), influence the electrical characteristics of element.Moreover copper atom is easy to spread in the monox, makes element have higher leakage current.Moreover (adhesion strength) is not good for the bond strength between the glass substrate of copper metal layer and below.Therefore, when making lead, increase the electrical characteristics and the fiduciary level of difficulty in process degree and reduction element with the copper metal.
Summary of the invention
The object of the present invention is to provide a kind of conductor structure and manufacture method thereof, it controls the gradient (taper angle) at metal level edge by a photonasty protective seam, uses and improves film coverage (filmcoverage).Moreover, increase the bond strength of lead and substrate and prevent the diffusion of atom in the lead by the restraining barrier.Moreover it prepares plain conductor by mosaic technology, is difficult for etched problem to avoid metal.
One embodiment of the invention are to provide a kind of conductor structure, and it comprises: a transparency carrier, a restraining barrier, a metal level, an and photonasty protective seam.The restraining barrier is arranged on the transparency carrier.Metal level is arranged on the restraining barrier, and the photonasty protective seam is arranged on the restraining barrier, and is formed at two sides of metal level.
Another embodiment of the present invention is to provide a kind of manufacture method of conductor structure.On a transparency carrier, form a restraining barrier.Form a photosensitive material patterned layer on the restraining barrier, it has an opening and exposes the restraining barrier.In opening, form a metal level, and selective removal photosensitive material patterned layer, a photonasty protective seam formed with two sides at metal level.Remove the restraining barrier that is not covered by photonasty protective seam and metal level.
For above-mentioned purpose of the present invention, feature and advantage can be become apparent, following conjunction with figs. and preferred embodiment are to illustrate in greater detail the present invention.
Description of drawings
Figure 1A to 1E is the manufacture method diagrammatic cross-section that shows according to the conductor structure of first embodiment of the invention.
Fig. 2 A to 2F is the manufacture method diagrammatic cross-section that shows according to the conductor structure of second embodiment of the invention.
The simple symbol explanation
100,200～conductor structure; 101,201～transparency carrier; 102,202～the first restraining barriers; 103,203～adhesion layer; 104～photosensitive material layer; 105～photomask; 105a, 105b, 105c～transmission region; 106,206～photosensitive material patterned layer; 106a～first; 106b～second portion; 106c, 206a～opening; 108,208～metal level; 110,210～the second restraining barriers; 112,214～photonasty protective seam; 211～photoresist layer; 213～etch protection layer.
Embodiment
Fig. 1 E is the diagrammatic cross-section that shows the conductor structure 100 of first embodiment of the invention.This conductor structure 100 is applicable in the display device; for example liquid crystal indicator, electroluminescent display or other flat display apparatus, its display device comprises: a transparency carrier 101, first and second restraining barrier 102 and 110, a metal level 108 and a photonasty protective seam 112.In the present embodiment, first restraining barrier 102 is arranged on the transparency carrier 101, and its material can be conductive material, for example, the material on first restraining barrier 102 can be selected from molybdenum (Mo), tungsten (W), molybdenum and tungsten alloy (MoW), chromium (Cr), tantalum (Ta), titanium (Ti), titanium nitride (TiN), titanium-tungsten (TiW), rhodium (Rh), rhenium (Re), ruthenium (Ru) or cobalt (Co).In another embodiment, first restraining barrier 102 also can be non-conducting material and optional from organic polymer or dead matter (as: SiC, SiN, metal oxide or other material).Metal level 108, for example copper metal layer is arranged on first restraining barrier 102.In addition, can one adhesion layer 103 be set selectivity between first restraining barrier 102 and metal level 108, its material can be selected from metal oxide, metal nitride, metal or its combination.This metal oxide, for example: indium tin oxide (indiumtin oxide, ITO), indium-zinc oxide (indium zinc oxide, IZO) layer, aluminium zinc oxide (aluminum-doped zinc oxide, AZO), the cadmium zinc oxide (cadmium tin oxide, CTO) or other metal oxide.This metal nitride, for example: tantalum nitride (tantalum nitride, TaN), titanium nitride (titanium nitride, TiN) or other metal nitride.This metal, for example: tantalum (tantalum, Ta), titanium (titanium, Ti) or other metal.In the present embodiment, 110 on second restraining barrier is arranged on the metal level 108, and its material can be conductive material, and for example, the material on second restraining barrier 110 can be selected from cobalt, nickel (Ni) or contain the alloy of above-mentioned at least a metal.In another embodiment, second restraining barrier 110 also can be non-conducting material.First and second restraining barrier 102 and 110 and the metal level 108 that is positioned between the two constitute a compound wire layer.Photonasty protective seam 112 is arranged on first restraining barrier 102, and is formed at two side sidewalls of metal level 108.Photonasty protective seam 112 can be a dielectric materials, and its dielectric constant range is approximately 2.7 to 3.4.In the present embodiment, photonasty protective seam 112 comprises a nitrogenous silicon oxide compound, for example the compound of PS-MSZ (photosensitive-methylsilazane) or other similarity.
The manufacture method diagrammatic cross-section that below cooperates the conductor structure of Figure 1A to 1E explanation first embodiment of the invention.At first, please refer to Figure 1A, provide a transparency carrier 101, for example a glass substrate.Then, after cleaning transparency carrier 101, on transparency carrier 101, form first restraining barrier 102 and photosensitive material layer 104 in regular turn.In the present embodiment, sputtering method (physicalvapor deposition can be passed through in first restraining barrier 102, PVD) formation, chemical vapour deposition technique (chemical vapor deposition, CVD) formation or rotating coating (spin-on) form it, and its thickness range is approximately 20 nanometers (nm) to 200 nanometers.First restraining barrier 102 is in order to strengthen the bond strength (adhesion strength) between transparency carrier 101 and the follow-up plain conductor.In addition, can be before forming photosensitive material layer 104, selectivity forms an adhesion layer (adhesion layer) 103 on first restraining barrier 102, in order to strengthen the bond strength (adhesion strength) between first restraining barrier 102 and the follow-up plain conductor again, and the material of adhesion layer 103 can comprise: metal oxide, metal nitride, metal or its combination.Photosensitive material layer 104 comprises a dielectric materials, for example the compound of PS-MSZ or other similarity.
Then, by a photomask 105, for example semi-transparent mask (half-tone mask) or palisade photomask (slit-pattern mask), photosensitive material layer 104 is implemented a photoetching process, on adhesion layer 103, to form a photosensitive material patterned layer 106, it has an opening 106c who exposes adhesion layer 103, in order to define a conductor section, shown in Figure 1B.Because photomask 105 has transmission region 105a, 105b, and the 105c of three different penetrabilitys, make photosensitive material patterned layer 106 have the adjacent one second part 106b that extends laterally from the first part 106a that reaches with opening 106c of one first part 106a, wherein the thickness of the 106a of first is thicker than second portion 106b.For example, be higher than corresponding to the second transmission region 105c of 106b partly, and the penetrability of transmission region 105c is higher than corresponding to the first transmission region 105b of 106a partly corresponding to the penetrability of the transmission region 105a of opening 106c.Herein, the thickness range of the 106a of first is approximately 1000 nanometer to 3000 nanometers, and the thickness of second portion 106b is less than 2500 nanometers.
Then, please refer to Fig. 1 C, form the metal level 108 as lead in opening 106c, for example copper metal layer is difficult for etched problem to utilize mosaic mode to solve the copper metal.Whether copper metal layer 108 decides the formation method according to the conduction on first restraining barrier 102.If the material selection conductive material on first restraining barrier 102, copper metal layer 108 uses electrochemical plating to form, if the material selection non-conducting material on first restraining barrier 102, copper metal layer 108 uses wireless plating technology or electroless plating method to form.For example, first restraining barrier 102 is a conductive material, and copper metal layer 108 forms it by electrochemical plating, and its thickness is less than one first 106a partly of photosensitive material patterned layer 106.As described above, copper easily and pasc reaction or be easy to spread in the monox.In addition, the copper metal that exposes is because reactive strong, and is easy to pollute in follow-up chemical deposition process and the dry etch process technology machine.Therefore, need above copper metal layer 108, to form a restraining barrier.In the present embodiment, on copper metal layer 108, form one second restraining barrier 110 by electrochemical plating.Second restraining barrier 110 comprises cobalt, nickel or contains the alloy of above-mentioned at least a metal, and its thickness range is approximately 5 nanometer to 50 nanometers.
Next, please refer to Fig. 1 D, selective removal photosensitive material patterned layer 106 forms a photonasty protective seam 112 and exposes adhesion layer 103 with two side sidewalls at metal level 108.In the present embodiment, photonasty protective seam 112 can have photosensitive material patterned layer 106 formation of different-thickness by dry-etching.Herein, photonasty protective seam 112 has gradually thin (taper) profile, and its upper surface trims the upper surface on second restraining barrier 110 substantially.The photonasty protective seam 112 that has gradually thin profile can improve the film coverage and improves process yield.
At last, please refer to Fig. 1 E, utilize the photonasty protective seam 112 and second restraining barrier 110 to remove the adhesion layer 103 that exposes and first restraining barrier 102 of below thereof, to finish the making of conductor structure 100 as etching mask.
The manufacture method diagrammatic cross-section that below cooperates the conductor structure of Fig. 2 A to 2F explanation second embodiment of the invention.At first, please refer to Fig. 2 A, provide a transparency carrier 201, for example a glass substrate.Then, after cleaning transparency carrier 201, on transparency carrier 201, form first restraining barrier 202, its material can be conductive material, for example, the material on first restraining barrier 202 can be selected from molybdenum, tungsten, molybdenum and tungsten alloy, chromium, tantalum, titanium, titanium nitride, titanium-tungsten, rhodium, rhenium, ruthenium or cobalt.In another embodiment, first restraining barrier 202 also can be non-conducting material and optional from organic polymer or dead matter (as: SiC, SiN, metal oxide or other material).In the present embodiment, first restraining barrier 202 can form (PVD) formation by sputtering method, chemical vapour deposition technique (CVD) forms or rotating coating (spin-on) forms it, and its thickness range is approximately 20 nanometer to 200 nanometers.First restraining barrier 202 is in order to strengthen the bond strength (adhesion strength) between transparency carrier 201 and the follow-up plain conductor.In addition, can on first restraining barrier 202, selectivity form an adhesion layer 203, and the material of adhesion layer 203 can comprise: metal oxide, metal nitride, metal or its combination, with further lifting bond strength.This metal oxide, for example: indium tin oxide (indium tin oxide, ITO), indium-zinc oxide (indiumzinc oxide, IZO) layer, aluminium zinc oxide (aluminum-doped zinc oxide, AZO), the cadmium zinc oxide (cadmium tin oxide, CTO) or other metal oxide.This metal nitride, for example: tantalum nitride (tantalum nitride, TaN), titanium nitride (titanium nitride, TiN) or other metal nitride.This metal, for example: tantalum (tantalum, Ta), titanium (titanium, Ti) or other metal.Then, form a photosensitive material patterned layer 206 on adhesion layer 203, it has an opening 206a who exposes adhesion layer 203, in order to define a conductor section.Photosensitive material patterned layer 206 comprises a dielectric materials, for example the compound of PS-MSZ or other similarity.
Then, please refer to Fig. 2 B, in opening 206a, form metal level 208, for example a copper metal layer as lead.Whether copper metal layer 208 can decide the formation method according to the conduction on first restraining barrier 202.If the material selection conductive material on first restraining barrier 202, copper metal layer 208 uses electrochemical plating to form, if the material selection non-conducting material on first restraining barrier 202, copper metal layer 208 uses wireless plating technology or electroless plating method to form.For example, first restraining barrier 202 is a conductive material, and copper metal layer 208 forms it by electrochemical plating, and its thickness is less than photosensitive material patterned layer 206.Then, on copper metal layer 208, form one second restraining barrier 210, in the present embodiment, can on copper metal layer 208, form one second restraining barrier 210 by electrochemical plating.Second restraining barrier 210 comprises cobalt, nickel or contains the alloy of above-mentioned at least a metal, and its thickness range is approximately 5 nanometer to 50 nanometers.Herein, the upper surface of photosensitive material patterned layer 206 trims the upper surface on second restraining barrier 210 substantially.
Next, please refer to Fig. 2 C, on photosensitive material patterned layer 206, apply a photoresist layer 211, and cover second restraining barrier 210 of metal level 208 tops.Afterwards, patterning photoresist layer 211, to form an etch protection layer 213, it covers second restraining barrier 210 and the local photosensitive material patterned layer 206 that covers two sides of metal level 208, shown in Fig. 2 D.
Next, please refer to Fig. 2 E, remove the photosensitive material patterned layer 206 that not etched protective seam 213 covers, form one with two side sidewalls and have the photonasty protective seam 214 of thin profile gradually and expose adhesion layer 203 at metal level 208.
At last, please refer to Fig. 2 F, after removing etch protection layer 213, can utilize the photonasty protective seam 214 and second restraining barrier 210 to remove the adhesion layer 203 that exposes and first restraining barrier 202 of below thereof, to finish the making of conductor structure 200 as etching mask.
Because copper conductor forms it with electrochemical plating, compared to sputtering method, can effectively reduce cost of manufacture.Moreover the copper conductor upper and lower has the restraining barrier, can improve the bond strength between copper metal and below glass substrate and the upper gate dielectric layer (silicon nitride) and prevents copper oxidation, diffusion, formation silicide, and pollutes the technology machine.Moreover the photonasty protective seam that the copper conductor both sides are formed with the tool gradient can improve the film coverage.Therefore, can simplify technology, reduce cost of manufacture, and increase the fiduciary level of element according to conductor structure of the present invention.
Though the present invention discloses as above with preferred embodiment; yet it is not in order to limit the present invention; those skilled in the art can do a little change and retouching without departing from the spirit and scope of the present invention, thus protection scope of the present invention should with accompanying Claim the person of being defined be as the criterion.
Claims (34)
1. conductor structure comprises:
One transparency carrier;
One first restraining barrier is arranged on this transparency carrier;
One metal level is arranged on this first restraining barrier; And
One photonasty protective seam is arranged on this first restraining barrier, and is formed at two sides of this metal level.
2. conductor structure as claimed in claim 1, wherein this first restraining barrier comprises conductive material and is selected from molybdenum, tungsten, molybdenum and tungsten alloy, chromium, tantalum, titanium, titanium nitride, titanium-tungsten, rhodium, rhenium, ruthenium or cobalt.
3. conductor structure as claimed in claim 1, wherein this first restraining barrier comprises non-conducting material.
4. conductor structure as claimed in claim 1 also comprises one second restraining barrier, is arranged on this metal level.
5. conductor structure as claimed in claim 4, wherein this second restraining barrier comprises cobalt, nickel or contains the alloy of above-mentioned at least a metal.
6. conductor structure as claimed in claim 1, wherein this metal level is a copper metal layer.
7. conductor structure as claimed in claim 1, wherein this photonasty protective seam comprises a dielectric materials, and its dielectric constant range is 2.7 to 3.4.
8. conductor structure as claimed in claim 1, wherein this photonasty protective seam comprises a nitrogenous silicon oxide compound.
9. conductor structure as claimed in claim 1 can comprise an adhesion layer, is arranged between this first restraining barrier and this photonasty protective seam.
10. conductor structure as claimed in claim 1, wherein this adhesion layer comprises metal oxide, metal nitride, metal or its combination.
11. a display device comprises conductor structure as claimed in claim 1.
12. the manufacture method of a conductor structure comprises:
Form one first restraining barrier on a transparency carrier;
Form a photosensitive material patterned layer on this first restraining barrier, it has an opening and exposes this first restraining barrier;
Form a metal level in this opening;
This photosensitive material patterned layer of selective removal forms a photonasty protective seam with two sides at this metal level; And
Remove this first restraining barrier that is not covered by this photonasty protective seam and this metal level.
13. the manufacture method of conductor structure as claimed in claim 12, the wherein formation of this photosensitive material patterned layer comprises:
Form a photosensitive material layer on this first restraining barrier; And
This photosensitive material layer of patterning is to form this opening therein;
Wherein this photosensitive material patterned layer has one first partly adjacent with this opening reaching from this first one second part that partly extends laterally, and the thickness of this first is thicker than this second portion.
14. the manufacture method of conductor structure as claimed in claim 13, wherein the thickness range of this first is approximately 1000 nanometer to 3000 nanometers.
15. the manufacture method of conductor structure as claimed in claim 13, wherein the thickness of this second portion is less than 2500 nanometers.
16. the manufacture method of conductor structure as claimed in claim 12, wherein this metal level utilizes electrochemical plating to be formed in this opening.
17. the manufacture method of conductor structure as claimed in claim 12, wherein this photosensitive material patterned layer forms it by a semi-transparent mask or palisade photomask.
18. the manufacture method of conductor structure as claimed in claim 12, wherein the thickness range on this first restraining barrier is approximately 20 nanometer to 200 nanometers.
19. the manufacture method of conductor structure as claimed in claim 12, wherein this first restraining barrier comprises conductive material and is selected from molybdenum, tungsten, molybdenum and tungsten alloy, chromium, tantalum, titanium, titanium nitride, titanium-tungsten, rhodium, rhenium, ruthenium or cobalt.
20. the manufacture method of conductor structure as claimed in claim 12, wherein this first restraining barrier comprises non-conducting material.
21. the manufacture method of conductor structure as claimed in claim 12 also comprises forming one second restraining barrier on this metal level.
22. the manufacture method of conductor structure as claimed in claim 21, wherein the thickness range on this second restraining barrier is approximately 5 nanometer to 50 nanometers.
23. the manufacture method of conductor structure as claimed in claim 21, wherein this second restraining barrier comprises cobalt, nickel or contains the alloy of above-mentioned at least a metal.
24. the manufacture method of conductor structure as claimed in claim 21, wherein this second restraining barrier utilizes electrochemical plating to be formed on this metal level.
25. the manufacture method of conductor structure as claimed in claim 12, wherein this metal level is a copper metal layer.
26. the manufacture method of conductor structure as claimed in claim 12, wherein this photosensitive material patterned layer comprises a dielectric materials, and its dielectric constant range is 2.7 to 3.4.
27. the manufacture method of conductor structure as claimed in claim 12, wherein this photonasty protective seam comprises a nitrogenous silicon oxide compound.
28. the manufacture method of conductor structure as claimed in claim 12, this photosensitive material patterned layer of selective removal wherein comprises:
Form a photoresist layer on this photosensitive material patterned layer, and cover this metal level;
This photoresist layer of patterning, to form an etch protection layer, it covers this metal level and local this photosensitive material patterned layer that covers two sides of this metal level; And
Remove this photosensitive material patterned layer that is not covered by this etch protection layer.
29. the manufacture method of conductor structure as claimed in claim 28 also comprises forming one second restraining barrier on this metal level.
30. the manufacture method of conductor structure as claimed in claim 29, wherein the thickness range on this second restraining barrier is approximately 5 to 50 nanometers.
31. the manufacture method of conductor structure as claimed in claim 29, wherein this second restraining barrier comprises cobalt, nickel or contains the alloy of above-mentioned at least a metal.
32. the manufacture method of conductor structure as claimed in claim 29, wherein this second restraining barrier utilizes electrochemical plating to be formed on this metal level.
33. the manufacture method of conductor structure as claimed in claim 12 also is included in and forms an adhesion layer between this first restraining barrier and this photosensitive material patterned layer.
34. the manufacture method of conductor structure as claimed in claim 33, wherein this adhesion layer comprises metal oxide, metal nitride, metal or its combination.
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| CNB2005100727182A CN100388067C (en) | 2005-05-17 | 2005-05-17 | Conductor structure and mfg. method thereof |
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| CNB2005100727182A CN100388067C (en) | 2005-05-17 | 2005-05-17 | Conductor structure and mfg. method thereof |
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| CN1687823A CN1687823A (en) | 2005-10-26 |
| CN100388067C true CN100388067C (en) | 2008-05-14 |
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| CN102902425B (en) * | 2011-07-28 | 2016-06-08 | 宸鸿科技(厦门)有限公司 | Capacitance type touch-control panel structure and manufacture method |
| TWI445469B (en) * | 2012-05-25 | 2014-07-11 | Unimicron Technology Corp | Sensing device package structure and method of fabricating the same |
| CN105278709A (en) * | 2014-05-28 | 2016-01-27 | 介面光电股份有限公司 | Manufacturing method of metal circuit micro-structures |
| JP6454250B2 (en) * | 2015-09-18 | 2019-01-16 | 株式会社ジャパンディスプレイ | Semiconductor device and manufacturing method thereof |
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| JPH08298369A (en) * | 1995-04-26 | 1996-11-12 | Nec Ibaraki Ltd | Polyimide film on copper wiring and its forming method |
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| US6627523B2 (en) * | 2000-06-20 | 2003-09-30 | Hynix Semiconductor Inc. | Method of forming a metal wiring in a semiconductor device |
| TW200401463A (en) * | 2002-06-17 | 2004-01-16 | Samsung Electronics Co Ltd | Metal-insulator-metal (MIM) capacitor and method for fabricating the same |
| CN1470923A (en) * | 2002-06-13 | 2004-01-28 | �G��ا�۹ɷ�����˾ | Circuit array lining for display device and method for making said lining |
| US20050041170A1 (en) * | 2001-12-27 | 2005-02-24 | Chae Gee Sung | Array substrate for a liquid crystal display device having an improved contact property and fabricating method thereof |
| CN1610859A (en) * | 2002-01-02 | 2005-04-27 | 三星电子株式会社 | A wire structure, a thin film transistor substrate of using the wire structure and a method of manufacturing the same |
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| JPH08298369A (en) * | 1995-04-26 | 1996-11-12 | Nec Ibaraki Ltd | Polyimide film on copper wiring and its forming method |
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| US6627523B2 (en) * | 2000-06-20 | 2003-09-30 | Hynix Semiconductor Inc. | Method of forming a metal wiring in a semiconductor device |
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| CN1610859A (en) * | 2002-01-02 | 2005-04-27 | 三星电子株式会社 | A wire structure, a thin film transistor substrate of using the wire structure and a method of manufacturing the same |
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| CN1687823A (en) | 2005-10-26 |
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