CN100501541C - Copper conductor structure for liquid crystal display assembly and manufacturing method thereof - Google Patents

Copper conductor structure for liquid crystal display assembly and manufacturing method thereof Download PDF

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CN100501541C
CN100501541C CNB2005100041869A CN200510004186A CN100501541C CN 100501541 C CN100501541 C CN 100501541C CN B2005100041869 A CNB2005100041869 A CN B2005100041869A CN 200510004186 A CN200510004186 A CN 200510004186A CN 100501541 C CN100501541 C CN 100501541C
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layer
copper conductor
copper
barrier layer
conductor layer
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CN1632678A (en
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刘祐玮
蔡文庆
黄国有
林惠芬
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AU Optronics Corp
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Abstract

It is a copper wire structure used in one LCD parts, which comprises the following: one patterned copper layer formed on the glass base plate layer; one barrier layer formed on the patterned copper wire layer with nitrogen or phosphor; one alloy chemical formula of M#-[1] M#-[2] R, wherein, M#-[1] represents Co or Mo, M#-[2] represents W, Mo or V and R represents B or P.

Description

The copper conducting wire structure of LCD assembly and manufacture method thereof
Technical field
The copper conducting wire structure and the manufacture method thereof of the relevant a kind of LCD assembly of the present invention, and particularly relevant a kind of copper conducting wire structure and manufacture method thereof with barrier layer.
Background technology
The thin film transistor (TFT) flat-paneled display screens, particularly tft liquid crystal shows (hereinafter to be referred as TFT-LCD) assembly, mainly be the thin film transistor (TFT) that utilizes into rectangular arrangement, cooperate electronic packages such as suitable electric capacity, switching pad to drive liquid crystal pixel, enrich beautiful figure with generation.Because TFT-LCD has that external form is frivolous, power consumption is few and characteristic such as radiationless pollution, therefore be widely used on the portable type information products such as notebook (Notebook), PDA(Personal Digital Assistant), even replace the CRT monitor of conventional desktop computer gradually.
Known TFT-LCD modular construction is all with aluminium alloy or the fine aluminium composite membrane material as lead.In order to overcome the phenomenon of large scale, high resolving power TFT-LCD or signal delay that LCD-TV produces (RC delay), then select the higher material of conductance.The material of common metal lead comprises: and copper (Cu, copper), conductance about 1.7 * 10 -6Ω cm; Aluminium (Al, aluminum), conductance about 2.6 * 10 -6Ω cm; Titanium (Ti, titanium), conductance about 41.6 * 10 -6Ω cm; Molybdenum (Mo, molybdenum), conductance about 5.7 * 10 -6Ω cm; Chromium (Cr, chromium), conductance about 12.8 * 10 -6Ω cm; Nickel (Ni, nickel), conductance about 6.8 * 10 -6Ω cm.Therefore, copper product replacement aluminium alloy or the fine aluminium lead with higher conductive characteristic is the popular R﹠D direction of present industrial community.
Please refer to Fig. 1, it is a kind of part-structure synoptic diagram of traditional tft liquid crystal display module (TFT-LCD).First sputter layer of metal copper on transparent glass substrate 101 utilizes micro-photographing process etching metal copper to form a patterned copper conductor layer 103 again.Wherein, the both sides of patterned copper conductor layer 103 must form suitable edge taper (Taper Angle).Carry out other successive process afterwards again, for example above patterned copper conductor layer 103, form a silicon nitride layer 105, an amorphous silicon layer (a-Si Layer) 107 and one n type amorphous silicon layer (n+a-Si Layer) 109 in regular turn.
Though copper conductor has preferable electrical conductivity, above-mentioned conventional process still has many shortcomings, for example:
One, very easily oxidation of copper surface.
Two, copper is difficult for etching, also is difficult to the edge taper of control copper conductor layer 103 when etching.
Three, the tack between copper and the glass is poor, so the bond strength between copper conductor layer 103 and the glass substrate 101 (Adhesion Strength) is not good.
Four, bond strength is not good between copper conductor layer 103 and the silicon nitride layer 105.
Five, when copper conductor layer 103 directly contacts with silicon nitride layer 105, the easy and pasc reaction of copper-base forms Cu 3Si, and change the band structure of silicon, influence the electrical characteristics of assembly.
Six, when copper conductor layer 103 directly contacted with silicon nitride layer 105, copper-base easily spread in monox, influences insulation characterisitic, caused higher leakage current.
Seven, when carrying out successive process, exposed copper conductor plasma activated chemical vapour deposition (PlasmaEnhanced Chemical Vapour Deposition, PECVD) with the plasma environment of dry-etching under, reactive extremely strong, be easy to pollute process work bench, have influence on the TFT assembly.
At present, it is as follows to have proposed to overcome the processing procedure of copper conductor shortcoming:
One, between copper conductor layer 103 and silicon nitride layer 105, adds the layer of metal layer again, to solve problems such as engaging not good, responsiveness and diffusion between copper and the silicon.The material of this metal level such as tantalum nitride (TaN), titanium nitride (TiN), aluminium nitride (AlN), aluminium oxide (Al 2O 3), titania (TiO 2), tantalum (Ta), molybdenum (Mo), chromium (Cr), titanium (Ti), tungsten (W) and nickel (Ni) etc.Yet this kind mode must increase metal coating, development, the etched step in several roads in processing procedure.
Two, with aldary such as chromaking copper (Cul -xCr x), magnesium copper (Cul -xMg x) as copper conductor layer 103, and under the well-oxygenated environment of high temperature, form chromium oxide (Cr in the surface of copper conductor 2O 3) or magnesium oxide (MgO), also engage problems such as not good, responsiveness and diffusion between copper and the silicon with solving.Yet this kind mode also must increase the step of metal coating, development, etching, heating in processing procedure.
Three, between copper conductor layer 103 and glass substrate 101, (IndiumTin Oxide, ITO) layer is to improve bond strength to add the conductive tin indium oxide of one deck.
Summary of the invention
In view of this, purpose of the present invention is exactly in copper conducting wire structure that a kind of LCD assembly is provided and manufacture method thereof, form a barrier layer on the copper conductor surface, to improve bond strength between copper and the silicon, prevent that copper and silicon from reacting and copper spreads in silicon layer, to improve the electrical of application component.
Propose a kind of copper conducting wire structure according to an aspect of the present invention, be applied in the TFT-LCD assembly, copper conducting wire structure comprises at least: a patterned copper conductor layer (Patterned Copper Layer) is formed on the glass substrate; One barrier layer (Barrier Layer) is formed at patterned copper conductor layer top, and the material of barrier layer is PS-MSZ photosensitive type photoresistance, or non-photosensitive type MSZ; Or an alloy material, chemical formula is M 1M 2R, wherein, M 1Be cobalt (Co) and M 2Be tungsten (W), molybdenum (Mo), rhenium (Re) or vanadium (V), perhaps M 1Be molybdenum (Mo) and M 2Be tungsten (W), rhenium (Re) or vanadium (V), R is boron (B) or phosphorus (P).
Propose a kind of manufacture method of copper conducting wire structure according to a further aspect of the invention, be applied in the processing procedure of a TFT-LCD assembly, it is as follows that the method comprising the steps of:
One glass substrate is provided;
Form a metal copper layer in the glass substrate top;
Pattern metal copper layer is to form a patterned copper conductor layer; And
Form a barrier layer on the patterned copper conductor layer and cover this patterned copper conductor layer, wherein, the material that forms barrier layer is a PS-MSZ photosensitive type photoresistance, or non-photosensitive type, or its chemical formula of an alloy material is M 1M 2R, M 1Be cobalt (Co) and M 2Be tungsten (W), molybdenum (Mo), rhenium (Re) or vanadium (V), perhaps M 1Be molybdenum (Mo) and M 2Be tungsten (W), rhenium (Re) or vanadium (V), R is boron (B) or phosphorus (P).Wherein, can use the barrier layer that coating method forms tool nitrogen or phosphorus one of them (as polysilane), or form the barrier layer of alloy material in electroless plating (Electroless) (for example carrying out electroless plating) mode with electrochemical cell with electroplate liquid.
For the present invention's above-mentioned purpose, characteristics and advantage can be become apparent, preferred embodiment cited below particularly, and conjunction with figs. is elaborated as follows:
Description of drawings
Fig. 1 is a kind of part-structure synoptic diagram of traditional tft liquid crystal display module (TFT-LCD).
Fig. 2 A～2E is the manufacture method according to the part tft liquid crystal display module (TFT-LCD) of first embodiment of the invention.
Fig. 3 A～3G is the manufacture method according to the part tft liquid crystal display module (TFT-LCD) of second embodiment of the invention.
Embodiment
The present invention forms a barrier layer on copper conductor surface, to solve problems such as engaging not good, responsiveness and diffusion in the traditional structure between the copper and silicon.Wherein, the material of barrier layer is to contain nitrogen or phosphorus one of them (as polysilane) at least, or an alloy material chemical formula is M 1M 2R, M 1Be cobalt (Co) or molybdenum (Mo), M 2Be tungsten (W), molybdenum (Mo), rhenium (Re) or vanadium (V), R is boron (B) or phosphorus (P).
Below, be to have adhesion layer with the TFT-LCD assembly of using to elaborate.And, without departing from the spirit and scope of the present invention, first embodiment and second embodiment are proposed according to the difference slightly of structure and manufacture method.In addition, be preferably in those embodiment between glass substrate and copper conductor layer and form an adhesion layer, the material of adhesion layer can be a metal, or nitrogenous, silicon or both macromolecular materials, to improve the bond strength of application component.Yet, the scope of those embodiment desire protection can't limit of the present invention.The pattern that technology of the present invention also is not limited among the embodiment to be narrated.
First embodiment
Please refer to Fig. 2 A～2E, it is the manufacture method according to the part tft liquid crystal display module (TFT-LCD) of first embodiment of the invention.At first, provide a glass substrate 201, and clean with deionized water.Then, be preferably above glass substrate 201, to form an adhesion layer (Adhesion Layer) 210, shown in Fig. 2 A.The method that forms adhesion layer 210 can be rotary coating (Spin Coating) or non-rotating coating (Spinless Coating).Wherein, the material of adhesion layer 210 contain at least nitrogen or phosphorus one of them, good macromolecular material polysilane (Polysilane), PS-MSZ (Photosensitive Methylsilazane) photosensitive type photoresistance or the non-photosensitive type MSZ photoresistance (Clariant Cop. provides) of the high grade of transparency and thermal stability for example.And the about 100nm-3000nm of the thickness range of adhesion layer 210.
Then, form a metal copper layer 202 on adhesion layer 210, shown in Fig. 2 B in the mode of sputter again.Then, utilize photoresistance and processing procedures such as little shadow, etching with metal copper layer 202 patternings.The step of patterning for example is: form a photoresist layer (not shown) earlier on metal copper layer 202, the exposure imaging photoresist layer is to form a photoresistance pattern again.According to photoresistance pattern etching metal copper layer 202, to form a patterned copper conductor layer 203.Remove the photoresistance pattern at last, shown in Fig. 2 C.
Then, above patterned copper conductor layer 203, form a barrier layer and overlay pattern copper conductor layer 203, the material of barrier layer for contain at least nitrogen or phosphorus one of them, for example be macromolecular material based on polysilane (Polysilane), forming thickness preferably is 500nm-3 μ m; Or an alloy material, chemical formula is M 1M 2R, M 1Be cobalt (Co) or molybdenum (Mo), M 2Be tungsten (W), molybdenum (Mo), rhenium (Re) or vanadium (V), R is boron (B) or phosphorus (P).In first embodiment, be contain one of them barrier layer of nitrogen or phosphorus at least and explain to form.
Shown in Fig. 2 D, above patterned copper conductor layer 203, form a barrier layer (BarrierLayer) 214, the method for formation can be rotary coating (Spin Coating) or non-rotating coating (Spinless Coating).Wherein, the material of barrier layer 214 contain at least nitrogen or phosphorus one of them, good macromolecular material polysilane (Polysilane), PS-MSZ (Photosensitive Methylsilazane) photosensitive type photoresistance or the non-photosensitive type MSZ photoresistance (ClariantCop. provides) of the high grade of transparency and thermal stability for example.And the thickness of barrier layer 214 is 100nm-3000nm.
And then carry out other successive process, for example shown in Fig. 2 E, form a silicon nitride layer 205, an amorphous silicon layer (a-Si Layer) 207 and one n type amorphous silicon layer (n+a-Si Layer) 209 above patterned copper conductor layer 203 in regular turn, generation type for example is plasma activated chemical vapour deposition (PECVD).
In addition, in first embodiment, also can select conductive metallic material as adhesion layer 210, material for example is to be selected from the group that molybdenum (Mo), tungsten (W), molybdenum tungsten (MoW), chromium (Cr), tantalum (Ta), titanium (Ti), titanium nitride (TiN), tungsten titanium (TiW), rhodium (Rh), rhenium (Re), ruthenium (Ru) and cobalt (Co) are formed.In processing procedure, then form the adhesion layer 210 of (Fig. 2 A) this conduction with sputtering way, and the about 20nm-200nm of thickness range.
Second embodiment
Please refer to Fig. 3 A～3G, it is the manufacture method according to the part tft liquid crystal display module (TFT-LCD) of second embodiment of the invention.At first, provide a glass substrate 301, and clean with deionized water.Then, above glass substrate 301, form an adhesion layer (Adhesion Layer) 310, as shown in Figure 3A.The method that forms adhesion layer 310 can be rotary coating (Spin Coating) or non-rotating coating (Spinless Coating).Wherein, the material of adhesion layer 310 contain at least nitrogen or phosphorus one of them, good macromolecular material polysilane (Polysilane), PS-MSZ (Photosensitive Methylsilazane) photosensitive type photoresistance or the non-photosensitive type MSZ photoresistance (Clariant Cop. provides) of the high grade of transparency and thermal stability for example.And the about 100nm-3000nm of the thickness range of adhesion layer 310.
Then, form a metal copper layer 302 on adhesion layer 310, shown in Fig. 3 B in the mode of sputter again.Then, utilize photoresistance and processing procedures such as little shadow, etching with metal copper layer 302 patternings.The step of patterning for example is: form a photoresist layer (not shown) earlier on metal copper layer 302, the exposure imaging photoresist layer is to form a photoresistance pattern again.According to photoresistance pattern etching metal copper layer 302, to form a patterned copper conductor layer 303.Remove the photoresistance pattern at last, shown in Fig. 3 C.
Then, carry out the patterning mode of dry-etching (for example with) according to the adhesion layer 310 of 303 pairs of belows of patterned copper conductor layer, and produce a patterning adhesion layer 311, shown in Fig. 3 D.
Then, above patterned copper conductor layer 303, form a barrier layer and overlay pattern copper conductor layer 303, the material of barrier layer for contain at least nitrogen or phosphorus one of them, for example be macromolecular material based on polysilane (Polysilane), forming thickness preferably is 500nm-3 μ m; Or an alloy material, chemical formula is M 1M 2R, M 1Be cobalt (Co) or molybdenum (Mo), M 2Be tungsten (W), molybdenum (Mo), rhenium (Re) or vanadium (V), R is boron (B) or phosphorus (P).In a second embodiment, be to form tool alloy material M 1M 2The barrier layer of R explains.
Before forming barrier layer, shown in Fig. 3 E, activation (Activated Reaction) is carried out on the surface of patterned copper conductor layer 303, and method for example is to utilize Metal Palladium (Pd) to carry out the surface of substitution reaction (Displacement Reaction) with activation pattern copper conductor layer 303.
Afterwards, shown in Fig. 3 F, utilize electroless plating (Electroless) mode above patterned copper conductor layer 303, to form a barrier layer (Barrier Layer) 314, the about 5nm-50nm of thickness range.Wherein, barrier layer 314 is to be an alloy material, and chemical formula is M 1M 2R, wherein, M 1Be cobalt (Co) or molybdenum (Mo), M 2Be tungsten (W), molybdenum (Mo), rhenium (Re) or vanadium (V), R is boron (B) or phosphorus (P).Embodiment for example is that glass substrate 301 immersions that will have patterned copper conductor layer 303 contain in the electrochemical cell of suitable electroplate liquid (as cobalt electroplating solution ..), forms barrier layer (as Co, CoWP, NiWP... etc.) 314 in the electroless plating mode.
And then carry out other successive process, for example shown in Fig. 3 G, form a silicon nitride layer 305, an amorphous silicon layer (a-Si Layer) 307 and one n type amorphous silicon layer (n+a-SiLayer) 309 above barrier layer 314 in regular turn, generation type for example is plasma activated chemical vapour deposition (PECVD).
In addition, in a second embodiment, also can select conductive metallic material as adhesion layer 310, material for example is to be selected from the group that molybdenum (Mo), tungsten (W), molybdenum tungsten (MoW), chromium (Cr), tantalum (Ta), titanium (Ti), titanium nitride (TiN), tungsten titanium (TiW), rhodium (Rh), rhenium (Re), ruthenium (Ru) and cobalt (Co) are formed.In processing procedure, then form the adhesion layer 310 of (Fig. 3 A) this conduction, the about 20nm-200nm of the thickness range of formation with sputtering way.And produce patterning adhesion layer 311 (Fig. 3 D) with etching mode.
According to above-mentioned first, second embodiment, before deposited silicon nitride layer 205,305, form a barrier layer 214,314 earlier, for example be that to form thickness with coating method be the macromolecule barrier layer of 100nm-3000nm, its material contains nitrogen or phosphorus one of them (for example polysilane (Polysilane), PS-MSZ photosensitive type photoresistance or non-photosensitive type MSZ photoresistance (Clariant Cop. provides)) at least; Or in the mode of electroless plating, on exposed copper conductor, the constituency plates alloy material M 1M 2R, the barrier layer of 5nm-50nm thickness.
According to above-mentioned, barrier layer also can avoid copper conductor to expose and oxidation (therefore must not increase the processing procedure of removing cupric oxide) in follow-up processing procedure except the function that planarization is arranged.The copper conductor that barrier membrane layer protection arranged in successive process (as carry out the deposition of SiN/a-Si/n+ three-layer thin-film with PE-CVD; under the plasma environment of dry-etching); owing to there is not exposed copper conductor, therefore the possibility that board is polluted also significantly reduces.
At least contain one of them macromolecular material of nitrogen or phosphorus as barrier layer if select for use, can use rotary coating (spin coating) or non-rotating coating (spinless coating) technology to form, except more traditional gold-tinted mode reduces plated film, development, etched processing procedure, the manufacturing cost of material and board is all comparatively cheap, and manufacturing cost is reduced.In addition, select for use for example is that polysilane (Polysilane) material is as barrier layer, then have good thermal stability and high-transmittance, do not have too big influence for the optical and reliability of application component, therefore the tolerance for edge taper will improve in the etching process of copper conductor.
If select alloy material M for use 1M 2R is as barrier layer, and except can be used as good etching end point layer (etchstop layer), the conduction property of this barrier layer can make copper conductor be connected with other conductor layer by this barrier layer, and needn't directly contact; And form the M of copper conductor in electroless plating (electroless plating) mode 1M 2The R barrier layer, except more traditional gold-tinted mode reduced plated film, development, etched processing procedure, the manufacturing cost of material and board was all cheaper, and manufacturing cost is reduced.
In sum; though the present invention discloses as above with preferred embodiment; yet it is not in order to limit the present invention; any person skilled in the art person; without departing from the spirit and scope of the present invention; when the variation that can do various equivalences or replacement, so protection scope of the present invention is when looking accompanying being as the criterion that the application's claim scope defined.

Claims (6)

1. a copper conducting wire structure is applied in the tft liquid crystal display module, and this copper conducting wire structure comprises at least:
One patterned copper conductor layer is formed on the glass substrate;
One barrier layer is formed at this patterned copper conductor layer top, and the material of this barrier layer is an alloy material, and the chemical formula of this alloy material is M 1M 2R, M 1Be cobalt (Co) and M 2Be tungsten (W), molybdenum (Mo), rhenium (Re) or vanadium (V), perhaps M 1Be molybdenum (Mo) and M 2Be tungsten (W), rhenium (Re) or vanadium (V), R is boron (B) or phosphorus (P).
2. copper conducting wire structure as claimed in claim 1, the thickness that it is characterized in that this barrier layer is 5nm-50nm.
3. copper conducting wire structure as claimed in claim 1 comprises that also an adhesion layer is formed between this patterned copper conductor layer and this glass substrate.
4. the manufacture method of a copper conducting wire structure comprises that step is as follows:
One glass substrate is provided;
Form a metal copper layer in this glass substrate top;
This metal copper layer of patterning is to form a patterned copper conductor layer; And
Form a barrier layer on this patterned copper conductor layer and cover this patterned copper conductor layer,
Wherein, form material one alloy material of this barrier layer, its chemical formula is M 1M 2R, M 1Be cobalt (Co) and M 2Be tungsten (W), molybdenum (Mo), rhenium (Re) or vanadium (V), perhaps M 1Be molybdenum (Mo) and M 2Be tungsten (W), rhenium (Re) or vanadium (V), R is boron (B) or phosphorus (P).
5. manufacture method as claimed in claim 4 is characterized in that forming alloy material M in the electroless plating mode 1M 2This barrier layer of R is on this patterned copper conductor layer, and the thickness that this barrier layer forms is 5nm-50nm.
6. manufacture method as claimed in claim 5 is characterized in that before the step that forms this barrier layer, activates the surface of this patterned copper conductor layer earlier with palladium (Pd).
CNB2005100041869A 2005-01-11 2005-01-11 Copper conductor structure for liquid crystal display assembly and manufacturing method thereof Active CN100501541C (en)

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CN100501541C true CN100501541C (en) 2009-06-17

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Publication number Priority date Publication date Assignee Title
KR101212142B1 (en) * 2005-11-28 2012-12-14 엘지디스플레이 주식회사 Liquid Crystal Display Device And Method For Fabricating The Same
CN102736333B (en) * 2012-06-18 2015-07-15 深圳市华星光电技术有限公司 Array substrate, liquid crystal display device and manufacture method for array substrate
CN108172584A (en) * 2017-12-26 2018-06-15 深圳市华星光电半导体显示技术有限公司 The preparation method and liquid crystal display panel of array substrate and its top electrode line pattern

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