CN100386887C - 陶瓷衬底多晶硅薄膜太阳能电池 - Google Patents
陶瓷衬底多晶硅薄膜太阳能电池 Download PDFInfo
- Publication number
- CN100386887C CN100386887C CNB2003101170957A CN200310117095A CN100386887C CN 100386887 C CN100386887 C CN 100386887C CN B2003101170957 A CNB2003101170957 A CN B2003101170957A CN 200310117095 A CN200310117095 A CN 200310117095A CN 100386887 C CN100386887 C CN 100386887C
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- Prior art keywords
- ceramic substrate
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- film solar
- silicon film
- solar cell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000000919 ceramic Substances 0.000 title claims abstract description 23
- 239000000758 substrate Substances 0.000 title claims abstract description 21
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 8
- 229920005591 polysilicon Polymers 0.000 title claims description 5
- 239000010409 thin film Substances 0.000 title claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 26
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 23
- 239000010703 silicon Substances 0.000 claims abstract description 23
- 238000009792 diffusion process Methods 0.000 claims abstract description 5
- 239000010408 film Substances 0.000 claims description 13
- 239000013078 crystal Substances 0.000 claims description 10
- 230000008021 deposition Effects 0.000 claims description 5
- 239000012528 membrane Substances 0.000 claims description 4
- 238000002360 preparation method Methods 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims 2
- 239000000463 material Substances 0.000 abstract description 8
- 238000000151 deposition Methods 0.000 abstract description 6
- 238000000034 method Methods 0.000 abstract description 6
- 239000007789 gas Substances 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 5
- 238000011161 development Methods 0.000 description 3
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 229910052863 mullite Inorganic materials 0.000 description 2
- 238000013459 approach Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 239000003245 coal Substances 0.000 description 1
- 239000002803 fossil fuel Substances 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 239000003595 mist Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000003345 natural gas Substances 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000001289 rapid thermal chemical vapour deposition Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000000452 restraining effect Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000011863 silicon-based powder Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
Images
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Photovoltaic Devices (AREA)
Abstract
Description
Claims (1)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB2003101170957A CN100386887C (zh) | 2003-12-09 | 2003-12-09 | 陶瓷衬底多晶硅薄膜太阳能电池 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB2003101170957A CN100386887C (zh) | 2003-12-09 | 2003-12-09 | 陶瓷衬底多晶硅薄膜太阳能电池 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1547259A CN1547259A (zh) | 2004-11-17 |
CN100386887C true CN100386887C (zh) | 2008-05-07 |
Family
ID=34337695
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2003101170957A Expired - Fee Related CN100386887C (zh) | 2003-12-09 | 2003-12-09 | 陶瓷衬底多晶硅薄膜太阳能电池 |
Country Status (1)
Country | Link |
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CN (1) | CN100386887C (zh) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100416863C (zh) * | 2006-10-13 | 2008-09-03 | 中国科学院上海技术物理研究所 | 廉价多晶硅薄膜太阳电池 |
CN111755321A (zh) * | 2020-05-20 | 2020-10-09 | 嘉兴市轩禾园艺技术有限公司 | 多晶硅半导体薄膜衬底的制备方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002185024A (ja) * | 2000-12-13 | 2002-06-28 | National Institute Of Advanced Industrial & Technology | 太陽電池及びその製造方法 |
JP2002314104A (ja) * | 2001-04-17 | 2002-10-25 | Sharp Corp | 薄膜太陽電池およびその製造方法 |
JP2003258274A (ja) * | 2002-02-27 | 2003-09-12 | Nissha Printing Co Ltd | 薄膜太陽電池用下部電極の製造方法 |
-
2003
- 2003-12-09 CN CNB2003101170957A patent/CN100386887C/zh not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002185024A (ja) * | 2000-12-13 | 2002-06-28 | National Institute Of Advanced Industrial & Technology | 太陽電池及びその製造方法 |
JP2002314104A (ja) * | 2001-04-17 | 2002-10-25 | Sharp Corp | 薄膜太陽電池およびその製造方法 |
JP2003258274A (ja) * | 2002-02-27 | 2003-09-12 | Nissha Printing Co Ltd | 薄膜太陽電池用下部電極の製造方法 |
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Publication number | Publication date |
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CN1547259A (zh) | 2004-11-17 |
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Owner name: LIAONING NANGUANG ENERGY-SAVING TECHNOLOGY CO. LTD Free format text: FORMER OWNER: TSINGHUA UNIVERSITY Effective date: 20100730 |
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Free format text: CORRECT: ADDRESS; FROM: 100084 MAILBOX 100084-82, BEIJING CITY TO: 112000 WENZHUANGZI DIVISION, ECONOMIC DEVELOPMENT ZONE, TIELING CITY, LIAONING PROVINCE |
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Effective date of registration: 20100730 Address after: 112000 Liaoning Province, Tieling City Economic Development Zone Chuang-tzu temperature field Patentee after: Liaoning Nanguang Energy Technology Co. Ltd. Address before: 100084 Beijing 100084-82 mailbox Patentee before: Tsinghua University |
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