CN100386807C - Making process of pattern on wafer and its application - Google Patents
Making process of pattern on wafer and its application Download PDFInfo
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- CN100386807C CN100386807C CNB031468535A CN03146853A CN100386807C CN 100386807 C CN100386807 C CN 100386807C CN B031468535 A CNB031468535 A CN B031468535A CN 03146853 A CN03146853 A CN 03146853A CN 100386807 C CN100386807 C CN 100386807C
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- integrated circuit
- disk
- semiconductor wafer
- imprinting
- circuit patterns
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Abstract
The present invention provides a making method of pattern on a wafer. The present invention comprises the following steps: (1) a wafer with a central hole is processed; (2) photosensitive adhesive is coated on the wafer, so that the wafer can be made into a recordable optical disc; (3) pattern is recorded on the recordable optical disc by an optical disc recorder; (4) the development of the optical disc with pattern is carried out. Arbitrarily desired pattern can be made on the wafer with a central hole by the present invention, and the present invention can be used for forming integrated circuit pattern with complicated shape and small dimension. The present invention has the advantages of high precision, stable and reliable quality, simple operation process, easy implementation and extensive application range.
Description
Technical field
The present invention relates to microfabrication manufacturing technology field, the method for making and the application thereof of integrated circuit patterns on particularly a kind of disk.
Background technology
At present, the CD that can be used for imprinting is coated with the manufacturing of one deck light-sensitive emulsion and forms on the plastics disk, the CD that will can be used for imprinting is placed in the CD writer, under irradiation than intense laser beam, the recording medium light-sensitive emulsion formation hot spot that changes, having or not of hot spot represents 0 and 1, thereby realizes the storage to information.Form the channel that is made of hot spot on light-sensitive emulsion, be actually a kind of micro-speckle patterns, the CD of imprinting also only is used for the storage of information.In the prior art, the method for making of general integrated circuit mainly is the optical projection method for making, its making step comprises: make the different mask graph plate of a cover, scribbling the corresponding pattern of formation on the silicon chip of photoresist layer by mask projection, the silicon chip of sensitization spread, technology such as doping, finish fixing to the sensitization figure, wash original photoresist off, again on silicon chip, be coated with new photoresist, re-use different mask graph plates and repeat above-mentioned steps, thereby produce a slice integrated circuit; In manufacturing process, the silicon wafer of no center pit forms the location of limit realization always by cutting its last branch, each silicon chip needs 10～20 masks, mask comprises dozens or even hundreds of technological process, if a mask departs from the part micron, then causes whole silicon wafer to scrap, because previous reasons, so the integrated circuit fabrication process complexity, production efficiency is low, and rejection rate is very high.The scale of integrated circuit is increasing, and is also more and more littler to the requirement of integrated circuit live width, adopts said method near physics limit.In addition, in the manufacture method of existing integrated circuits silicon chip, be cylindrical silicon single crystal rod to be cut earlier and obtain silicon wafer with cutter, on muller, grind its two surface again with abrasive particle, uneven and the damage that is produced to remove in the slice process also improves its depth of parallelism. and the affected layer that this silicon chip forms in the time of will removing attrition process with etch, carry out mirror finish with chemical mechanical polishing method again.Because silicon materials are hard and crisp, in cutting process, very easily to break crisp or crack and cause waste product, technological process is restive, and production efficiency is low.
Summary of the invention
The objective of the invention is to overcome the shortcoming that prior art exists, a kind of method of making integrated circuit patterns on the disk of band center pit is provided.
Another object of the present invention is to provide the application of integrated circuit diagram method for producing pattern on a kind of above-mentioned disk.
Purpose of the present invention is achieved through the following technical solutions: the method for making of integrated circuit patterns comprises the steps: the disk of (1) processing belt center pit on this disk; (2) but coat the CD that light-sensitive emulsion is made imprinting at disk; (3) but go out integrated circuit patterns with CD writer imprinting on the CD of imprinting; (4) imprinting there is the CD of integrated circuit patterns develop.
In order to realize the present invention better, the disk of band center pit can adopt light transmissive material to make in the described step (1), and the CD that imprinting is had integrated circuit patterns in step (4) develops and makes mask, and with the mask cover to forming film through surface treatment (for example oxidation or electroplating technology) and coating on the described film on the semiconductor wafer of light-sensitive emulsion, shine exposure with the zone that light source is determined mask, the semiconductor wafer that will expose places developer solution to develop again, then semiconductor wafer is carried out etching and forms integrated circuit patterns; Or but diffusing, doping is coated semiconductor wafer the semiconductor CD that light-sensitive emulsion is made imprinting afterwards again, but go out integrated circuit patterns with CD writer imprinting on the semiconductor CD of imprinting again, there is the semiconductor wafer of integrated circuit patterns to place developer solution to develop imprinting, then the membraneous material on the semiconductor wafer is carried out etching, form integrated circuit patterns.Said process can carry out repeatedly, forms the multilevel integration pattern.
In order to realize the present invention better, the disk of band center pit adopts semiconductor material in the described step (1), make as silicon, germanium or semiconducting compound etc., and in step (4), there is the semiconductor wafer of integrated circuit patterns to place developer solution to develop imprinting, then semiconductor wafer carried out etching; But or again semiconductor wafer is coated the CD that light-sensitive emulsion is made imprinting after the diffusing, doping surface treatment formation thin film, but go out integrated circuit patterns with CD writer imprinting on the CD of imprinting again, again imprinting there is the semiconductor wafer of integrated circuit patterns to place developer solution to develop, then the membraneous material on the semiconductor wafer is carried out etching, form integrated circuit patterns.Said process can carry out repeatedly, forms the multilevel integration pattern.
Described light transmissive material in order to the manufacturing disk can be as glass, oxide ceramics, transparent plastic etc., and the job operation of described disk can adopt existing general method for making CD, promptly is to make described disk by the incising circular bar.
Described semiconductor material in order to the manufacturing disk can be silicon, germanium or semiconducting compound etc., and the job operation of described disk can be: the liquid semiconductor materials conveyance in the disc molding die tool, is made described disk after the liquid semiconductor material solidification.This method for preparing disk is compared with the method that the cutting bar is made disk, directly makes disk by liquid material, has reduced the operation of manufacturing process, has improved the production efficiency and the product quality of disk, and rejection rate greatly reduces.
The light source of described CD writer can be laser, blue light, ultraviolet ray, also can replace light source in the CD writer with ray or electron beam.
Said method can be applicable to make integrated circuit.
Action principle of the present invention is: the method for making of integrated circuit patterns mainly is the making that the principle of utilizing laser (or other light source) can form hot spot on the disk of band center pit realizes integrated circuit patterns on this disk, its position fixing process is identical with the localization method of the CD of routine information record, the hot spot that laser radiation forms on CD promptly can also can be used as the telltale mark of information record as to recording of information.When the motor that drives the center that CD rotates or not, CD did not rotate yet, and have only leading screw to drive laser head in CD writer during radial motion, and laser head was luminous continuously, and then the radial alignment at center is appeared in imprinting on CD; When leading screw does not rotate, laser head radial position in CD writer is constant, and when the motor that drives the center that CD rotates rotated, CD also rotated, and laser head is luminous continuously, then on CD imprinting to go out with the cd centre be the circle in the center of circle; When leading screw drives laser head radial motion in CD writer, the driven by motor CD that drives the center of CD rotation simultaneously rotates, and laser head satisfies polar straight-line equation with respect to the motion of CD, and laser head is luminous continuously, then can imprinting go out line segment on any position of CD.When making the multilevel integration pattern, also adopt the locating information of imprinting for the first time to position, then can guarantee multilevel integration pattern position corresponding relation.
The present invention has following advantage and effect with respect to prior art:
(1) the invention provides a kind of brand-new high-efficiency reliable microfabrication manufacture method, utilize this method on the disk of band center pit, to produce required integrated circuit patterns arbitrarily.
(2) the present invention can directly produce the integrated circuit pattern by CD writer with the figure of Computer Design, and operating process is simple, is convenient to very much implement.
(3) but the present invention can make semiconductor material the CD of imprinting, but go out integrated circuit patterns with CD writer imprinting on the semiconductor CD of imprinting again, utilize the function that CD writer can reading writing information, both realized the storage of information, realized the Kinematic Positioning of pattern imprinting again, photoetching process efficient height, employed device simple has been simplified the making flow process of integrated circuit, small investment, cost is low, is suitable for large-scale production application.
(4) compare with the method for manufacturing integrated circuit of existing mask, the inventive method is easy to make than the complex pattern and the integrated circuit patterns of fine size more, the precision height, and steady quality is reliable.
(5) the present invention can make as required and produce multi-form integrated circuit patterns, and range of application is extremely extensive, good market prospect.
Description of drawings
Fig. 1 is the structural representation of the used disc molding die tool of the present invention.
Embodiment
The present invention is described in further detail below in conjunction with embodiment and accompanying drawing, but embodiments of the present invention are not limited thereto.
Embodiment 1
Adopt the good glass of printing opacity to make the disk of center pit, size is consistent with the CD of 120mm, plates one deck chromium on the glass wafer surface, but glass wafer is coated the CD that light-sensitive emulsion is made imprinting then; Go out the pattern that silica membrane on the disk needs etching with CD writer imprinting on the glass CD again, the light source in the CD writer is that wavelength is the laser of 650nm; Again the figuratum glass CD of imprinting is developed and make mask; Same method is made the mask of metallic aluminium wiring.Then with the glass wafer mask cover of corresponding silica membrane layer etching pattern to scribbling through oxidation on the silicon wafer of light-sensitive emulsion, shine exposure with the zone that light source is determined mask, place developer solution to develop silicon wafer again; Then silicon wafer is carried out etching, remove the photoresist that has hardened on the silicon wafer again; Evaporation layer of metal aluminium on silicon wafer, on the metallic aluminium of silicon wafer, coat light-sensitive emulsion, then with the mask cover of corresponding metallic aluminium wiring to having on the silicon wafer of metallic aluminium scribbling light-sensitive emulsion and evaporation, shine exposure with the zone that light source is determined mask, place developer solution to develop silicon wafer again, then the metallic aluminium on the silicon wafer is carried out the wiring of etching formation aluminium and produce integrated circuit, with laser integrated circuit unit is cut again, remove the light-sensitive emulsion that has hardened on the integrated circuit silicon chip at last.
Embodiment 2
At first adopt the mould shown in Figure 1 required silicon wafer that is shaped.As shown in Figure 1, formpiston 1 and formpiston 2 place former 3, give heating element 4 energisings to mould and die preheating, thermopair 5 can collect the temperature on the former 3, reaches design temperature and afterwards formpiston 1 is upwards withdrawed from from former 3, and formpiston 2 is stayed the bottom position in the former 3, in former 3, pour into liquid-state silicon, the overheated temperature of liquid-state silicon is 1500 ℃, pours in the former 3 and can not solidify immediately, and formpiston 1 is pressed on the liquid silicon then.According to the temperature of temperature acquisition sensor acquisition, judge whether to switch on to former 3 heating to water flowing cooling former 3 in the cooling tube 6 or to heating element 4, guarantee that the liquid-state silicon in the die cavity can crystallization on the die wall of former 3.Formpiston 2 usefulness single crystal silicon materials are made, and to its endoporus water flowing cooling, because the temperature of formpiston 2 is minimum, form heat flow field from top to bottom in the liquid-state silicon in die cavity, and liquid-state silicon is to the surface crystallization of formpiston 2 and form single-chip.Formpiston 1 withdraws from former 3 then, formpiston 2 draws off former 3 with silicon single crystal flake, because formpiston 1 is polished to minute surface with the operative end surface that formpiston 2 contacts with silicon materials, the silicon single crystal flake surface planarity height that obtains, reprocess out the center pit that CD has, carry out the silicon wafer that chemical polishing obtains to make integrated circuit afterwards then.Again the silicon wafer oxidation is generated insulation course, but then silicon wafer is coated the CD that light-sensitive emulsion is made imprinting; Going out after the locating information again with CD writer imprinting on silicon wafer again, imprinting goes out the line image that silicon dioxide needs etching; Again the figuratum silicon wafer of imprinting is developed, keep locating information during development; Then semiconductor wafer is carried out etching, remove the photoresist that has hardened on the silicon wafer again.Evaporation layer of metal aluminium on silicon wafer then, on the metallic aluminium of silicon wafer, coat light-sensitive emulsion, go out the line image that the metallic aluminium wiring needs etching with CD writer imprinting on silicon wafer again, and the location of realizing aluminium wiring etching according to the locating information that keeps, place developer solution to develop silicon wafer again, then the metallic aluminium on the silicon wafer is carried out the wiring of etching formation aluminium and produce integrated circuit, with laser integrated circuit unit is cut again, remove the light-sensitive emulsion that has hardened on the integrated circuit silicon chip at last.
Claims (5)
1. the method for making of integrated circuit patterns on the disk is characterized in that comprising the steps: the disk of (1) processing belt center pit; (2) but on disk, coat the CD that light-sensitive emulsion is made imprinting; (3) drive laser head radial motion in CD writer by leading screw, the driven by motor CD that drives the center of CD rotation simultaneously rotates, in the compound motion and the continuous luminous process of laser head of the two, imprinting goes out straight line on the sensitization disk, and imprinting goes out the line image of integrated circuit; (4) imprinting there is the CD development of integrated circuit patterns make mask, same method is made the mask plate of metallic aluminium wiring, the mask sleeve-board that described CD is made is to scribbling through oxidation on the semiconductor wafer of light-sensitive emulsion then, shine exposure with the zone that light source is determined mask, the semiconductor wafer that will expose places developer solution to develop again, then semiconductor wafer is carried out etching, remove the photoresist that has hardened on the semiconductor wafer, evaporation layer of metal aluminium on semiconductor wafer again, on the metallic aluminium of semiconductor wafer, coat light-sensitive emulsion, then with the mask sleeve-board of described metallic aluminium wiring to having on the semiconductor wafer of metallic aluminium scribbling light-sensitive emulsion and evaporation, shine exposure with the zone that light source is determined mask plate, place developer solution to develop semiconductor wafer again, then the metallic aluminium on the semiconductor wafer is carried out the wiring of etching formation aluminium and produce integrated circuit, with laser integrated circuit unit is cut again, make the semiconductor wafer of integrated circuit patterns.
2. the method for making of integrated circuit patterns on the disk according to claim 1 is characterized in that: described step (4) is carried out repeatedly, forms the multilevel integration pattern.
3. the method for making of integrated circuit patterns on the disk according to claim 1 is characterized in that: the material of described disk is glass, oxide ceramics, transparent plastic or the semiconductor material of printing opacity.
4. the method for making of integrated circuit patterns on the disk according to claim 3, it is characterized in that: when the material of described disk is semiconductor material, the job operation of described disk be with the liquid semiconductor materials conveyance in the disc molding die tool, make described disk after the liquid semiconductor material solidification.
5. the method for making of integrated circuit patterns on the disk according to claim 1, it is characterized in that: the light source of described CD writer is a laser.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB031468535A CN100386807C (en) | 2003-09-18 | 2003-09-18 | Making process of pattern on wafer and its application |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB031468535A CN100386807C (en) | 2003-09-18 | 2003-09-18 | Making process of pattern on wafer and its application |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1527300A CN1527300A (en) | 2004-09-08 |
| CN100386807C true CN100386807C (en) | 2008-05-07 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB031468535A Expired - Fee Related CN100386807C (en) | 2003-09-18 | 2003-09-18 | Making process of pattern on wafer and its application |
Country Status (1)
| Country | Link |
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| CN (1) | CN100386807C (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102467936A (en) * | 2010-11-11 | 2012-05-23 | 连秉然 | Optical disk burning, printing, detecting and reading machine system |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1121240A (en) * | 1994-02-14 | 1996-04-24 | 奥德米国际有限公司 | A method of manufacturing a matrix for producing optical disks without the medium of a master |
| US5654553A (en) * | 1993-06-10 | 1997-08-05 | Nikon Corporation | Projection exposure apparatus having an alignment sensor for aligning a mask image with a substrate |
| CN1159863A (en) * | 1994-07-29 | 1997-09-17 | 托马斯G·毕法诺 | Process for manufacturing optical data storage disk stamper |
| JPH11186128A (en) * | 1997-12-19 | 1999-07-09 | Nec Corp | Exposure device |
-
2003
- 2003-09-18 CN CNB031468535A patent/CN100386807C/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5654553A (en) * | 1993-06-10 | 1997-08-05 | Nikon Corporation | Projection exposure apparatus having an alignment sensor for aligning a mask image with a substrate |
| CN1121240A (en) * | 1994-02-14 | 1996-04-24 | 奥德米国际有限公司 | A method of manufacturing a matrix for producing optical disks without the medium of a master |
| CN1159863A (en) * | 1994-07-29 | 1997-09-17 | 托马斯G·毕法诺 | Process for manufacturing optical data storage disk stamper |
| JPH11186128A (en) * | 1997-12-19 | 1999-07-09 | Nec Corp | Exposure device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1527300A (en) | 2004-09-08 |
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Addressee: Yang Xiaosong Document name: Notification of registration procedures and notice of patent for invention |
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Assignee: Guangdong Nanfang communication universal intelligent card system Co., Ltd. Assignor: Zhou Zhaoyao Contract fulfillment period: 2008.8.11 to 2013.8.11 Contract record no.: 2009440000209 Denomination of invention: Making process of pattern on wafer and its application Granted publication date: 20080507 License type: Exclusive license Record date: 20090331 |
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Free format text: EXCLUSIVE LICENSE; TIME LIMIT OF IMPLEMENTING CONTACT: 2008.8.11 TO 2013.8.11; CHANGE OF CONTRACT Name of requester: GUANGDONG SOUTHERN COMMUNICATION GOTONE IC CARD SY Effective date: 20090331 |
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| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20080507 Termination date: 20120918 |