JP2000039702A - Transfer and processing method of fine pattern - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a transfer and processing method of a fine pattern which enables mass production at a low cost and by which a fine rugged pattern including a size smaller than wavelength of light can be formed on the body to be transferred. SOLUTION: A transfer body 11 having a fine rugged pattern 12 is prepared. A semisolid material 15 is applied on the body to be transferred 13, and the rugged pattern 12 on the transfer body 11 is pressed and adhered to the semisolid material 15 to transfer the rugged pattern 15a to the semisolid material. Then the rugged pattern 15a on the semisolid material is irradiated with energy beams to transfer a rugged pattern 13a to the body 13 according to the rugged pattern of the semisolid material.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for transferring a fine pattern, and more particularly, to a fine pattern capable of easily and easily forming a large number of fine concave and convex patterns including a light wavelength limit or less on an object to be transferred. And a transfer processing method.

[0002]

2. Description of the Related Art As a typical example of fine processing, the following method is generally used to form a fine pattern on a semiconductor substrate. That is, a photosensitive material (photoresist) is applied on a semiconductor substrate, and the photosensitive material is exposed by irradiating a light beam having a projection pattern according to a mask pattern by a reduced projection exposure method. According to such an exposure method, the minimum line width is limited by the light diffraction phenomenon, and it is a limit to form a transfer pattern having a size up to about the wavelength of light. For this reason, it is necessary to shorten the wavelength of the light beam used for miniaturization of the pattern. Currently, g-line (wavelength: 436 nm) and i-line (wavelength: 36
5 nm), KrF excimer laser light (wavelength: 248 n)
m), ArF excimer laser light (wavelength: 193 nm) or the like is used, and the wavelength of the light used is becoming shorter in accordance with the demand for fine line width. However, as long as such a light exposure method is used, it is theoretically difficult to transfer a pattern having a line width smaller than the wavelength of light as described above.

Therefore, recently, an evanescent field (near field)
A method of forming a fine pattern using the GaN has been studied.
The evanescent field is a method of providing fine irregularities of the wavelength of light or less on the surface of a material that transmits light, and applying a substrate coated with a photosensitive material, for example, to the irregular surface, the surface of which corresponds to the convexities of the above-described irregularity pattern. When the antenna is disposed close to a position below the wavelength of light, an electromagnetic field called an evanescent field is formed in that portion, and light is transmitted through this electromagnetic field. This evanescent field exponentially weakens exponentially when it is separated from the surface of the uneven part by about the wavelength of light or more. Therefore, by setting the step of the unevenness to, for example, about several tens of nm, mainly the convex part of the uneven pattern Light to the photosensitive material, and the light transmitting portion can be exposed. According to such an evanescent field, the line width of the photosensitive material to be exposed is determined by the size of a fine pattern, which is an uneven portion provided on a mask, and does not depend on the wavelength of light. For this reason, it is possible to transfer a fine pattern exceeding the limit of the wavelength of light.

As a method for forming a fine pattern using such an evanescent field, it is known to use an optical fiber whose tip is sharpened to a wavelength of light or less. A laser beam is supplied to an optical fiber whose tip is sharpened to the wavelength of light or less, and the tip is closely attached to the surface of the substrate coated with the photosensitive material or placed very close to the wavelength of light or less, so Generates a near field, light is transmitted through the near field, and the photosensitive material is exposed. Therefore,
By processing the tip of the optical fiber in advance to a size smaller than the wavelength of light, a pattern having a line width smaller than the wavelength of light can be exposed to the photosensitive material on the substrate surface. Then, by developing the photosensitive material and etching using the exposed portion of the photosensitive material as a mask, it is possible to form a line having a line width equal to or less than the wavelength of light on the substrate.

However, according to such a processing method, since the near field is formed only at the tip of the probe of the optical fiber, the exposure pattern must be drawn in one stroke. For this reason, when it is applied to the formation of a two-dimensional pattern used for a semiconductor integrated circuit or the like, it is necessary to scan the tip of the probe, which requires an enormous amount of time and a complicated mechanism. Impossible.

For this reason, it has been attempted to transfer a two-dimensional pattern using a mask having a fine pattern. That is, using a prism made of a light-transmitting material such as a glass material, a mask having a fine pattern having fine irregularities smaller than the wavelength of light is formed on the lower surface thereof. And
Light is incident at an angle such that light rays are totally reflected on the lower surface of the prism in the mask portion of the fine pattern, and the light is reflected by the lower surface of the prism. An evanescent field is formed by arranging a substrate coated with a photosensitive material on the surface very close to the wavelength of light or less to the fine pattern, thereby performing a two-dimensional pattern exposure according to the fine pattern. it can. That is, a light irradiation system is provided which is configured so that laser light is incident from one inclined surface of the prism, the incident light is totally reflected on the surface having the fine pattern, and the laser light is extracted into the atmosphere from another inclined surface of the prism. The photosensitive material on the substrate surface is brought into close contact with the fine pattern surface, thereby generating an evanescent field, and transmitting a light beam according to the exposure pattern to the photosensitive material to form a fine pattern having a wavelength equal to or less than the wavelength of light. It was made.

[0007]

According to the method described above,
Using the evanescent field, it becomes possible to two-dimensionally transfer a fine pattern having a wavelength equal to or less than the wavelength of light to the photosensitive material of the substrate. However, in this exposure method, it is necessary to adhere the fine pattern to the photosensitive material or to arrange the fine pattern close to the light wavelength or less, and there is a problem that the fine pattern is stained. However, fine patterns are
This is a two-dimensional pattern having a fine line width equal to or smaller than the wavelength of light, and the original mask needs to be drawn directly using electron beam exposure or drawn from a reticle using X-ray exposure. For this reason, the original mask cannot be used for mass production, and a mask having a fine pattern for mass production that is inexpensive and disposable has been required.

[0008] In addition to such applications, it may be necessary to copy a large amount of a transferred object having fine irregularities on the basis of a pattern of a fine size including the wavelength of the original light or less. . For example, in products such as laser disks, many irregularities far longer than the wavelength of light are currently formed on the board, but by setting these irregularities below or near the wavelength of light, the information density is dramatically improved. Can be done.

SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned circumstances, and provides a method of transferring a fine pattern capable of forming a fine concave and convex pattern including a wavelength of light or less on an object to be transferred, which is inexpensive and can be mass-produced. The purpose is to provide.

[0010]

According to a first aspect of the present invention, there is provided a transfer member provided with a fine uneven pattern, a semi-solid material applied to a transfer object, and the transfer member having the uneven pattern formed thereon. By pressing and adhering to the semi-solid material, the concavo-convex pattern is transferred to the semi-solid material, and an energy beam is irradiated on the concavo-convex pattern of the semi-solid material, so that the semi-solid material is transferred to the object to be transferred. The present invention is characterized in that an uneven pattern is transferred along the uneven pattern.

According to the present invention, the fine pattern is transferred to the semi-solid material formed on the surface of the transfer object by pressing the fine pattern, and the uniform energy beam is irradiated. Fine irregularities can be formed on the transferred object based on the fine pattern. Therefore, it is not necessary to perform positioning of a minute dimension, and there is no need for expensive exposure equipment or the like, and it is possible to transfer a fine pattern that can be mass-produced at low cost.

According to a second aspect of the present invention, the transcript comprises:
A roller for transferring the concavo-convex pattern onto the semi-solid material by rotationally pressing the roller.

According to the present invention, the transfer member is a roller, and a fine uneven pattern is provided along the outer peripheral surface or along the direction of the rotation axis, so that the roller can be applied to the semi-solid material of the transfer object. By rotating while pressing, the fine pattern of the transfer body can be transferred to the semi-solid material of the transfer body. Therefore, it is possible to transfer a fine pattern even when the transfer target has a wavy shape.

According to a third aspect of the present invention, the transfer member is a flexible member, which is arranged at a distance from the surface of the semi-solid material of the transfer member, and which is pressed halfway by a roller. The uneven pattern is transferred to the semi-solid material by bringing the semi-solid material into close contact with the solid material.

According to the present invention, by using a flexible member as a transfer member and rotating the roller while partially pressing the roller, a fine concavo-convex pattern can be transferred onto the entire surface of the transfer-receiving member. . As a result, although the surface of the transfer target is generally not completely flat, the transfer of the fine pattern can be performed even on such a distorted surface.

According to a fourth aspect of the present invention, there is provided a transfer member having a fine concavo-convex pattern, and the material to be transferred is poured onto the concavo-convex pattern of the transfer member in a state where the material is melted by heating. Thereafter, the material to be transferred is solidified by cooling, and the concavo-convex pattern is transferred, and then separated from the transferred body and taken out as a transferred body.

[0017] With this, a transferred object having a fine pattern of the wavelength of light or less can be manufactured only by pouring the transferred transferred material in a molten state, which is extremely useful for mass productivity and reduction in manufacturing cost.

According to a fifth aspect of the present invention, a resist is applied to a substrate to be a transfer body, a fine pattern is formed on the resist by electron beam or X-ray exposure and development, and high-speed atomization is performed using the resist pattern as a mask. By irradiating a linear beam, a fine concave and convex pattern for transfer is formed on the transfer body.

Thus, by using the electron beam or X-ray exposure, a problem of light diffraction does not occur, and a fine pattern including a light wavelength or less can be formed on the resist film. And
By irradiating a high-speed atomic beam with this resist film pattern as a mask, the high-speed atomic beam has a high rectilinearity and has no problem of repulsion due to electric charges or charge-up of an irradiated object, and an etching process having a high aspect ratio is performed. Can be done to itself. Accordingly, a fine transfer pattern including a wavelength of light having a high aspect ratio or less can be formed on the transfer body.

In general, according to the present invention, a transfer processing method which is very advantageous for transfer processing of a fine pattern including the light wavelength limit or less, and which is simple, efficient and low-cost can be realized. If a transfer target is used as a mask for light exposure using an evanescent field, it becomes possible to mass-produce a semiconductor integrated circuit having an ultrafine pattern. or,
By using the optical disk device or the like, a dramatic improvement in the information storage density can be expected.

[0021]

Embodiments of the present invention will be described below with reference to the accompanying drawings.

FIG. 1 shows a method for transferring a fine pattern according to a first embodiment of the present invention. As shown in FIG. 1A, a transfer body 11 having a fine pattern 12 having a size smaller than the wavelength of light is prepared. The transfer body 11 is made of, for example, a metal, and the pattern of the concavo-convex pattern to be transferred is a concavo-convex pattern having a width of, for example, several tens nm and a depth of several tens nm, which is equal to or less than the wavelength of light. A resist film 15 is applied to the surface of the transfer target 13. Here, the transfer target 13 is, for example, Al, Ni, Ag, Au, W, Mo, S
US, metals such as brass, or Si, SiO ₂ , Ni-P,
It is an inorganic material such as DLC (diamond-like carbon), glass, quartz glass, or the like, or a resin material such as plastic, fluorine-containing plastic, polyimide, or PMMA.

Then, as shown in FIG. 1B, the concave and convex pattern 12 of the transfer body 11 is brought into close contact with the resist film 15 applied to the surface of the transfer body 13 and pressed. As a result, an uneven pattern which is a transfer pattern corresponding to the fine uneven pattern 12 is formed on the resist film 15. For a polymer material such as a resist, the viscosity or hardness of the material at the time of transfer greatly affects processing accuracy. For example, if the viscosity is too low, the transfer shape is likely to collapse, and if it is too high, the corners are rounded, making it difficult to process with a high aspect ratio,
Controlling to an appropriate state is important for forming a fine pattern.

FIG. 1C shows that the transfer body 11 is formed on the resist film 1.
5 shows a state separated from FIG. Then, processing such as post baking is performed to increase the processing resistance of the resist. And FIG.
As shown in (d), irradiation with a high-speed atomic beam is performed. The high-speed atomic beam is an electrically neutral particle beam. In particular, by using a parallel plate type high-speed electron beam source, a highly straight beam can be obtained, and the etching of the transfer target 13 can be performed with a high aspect ratio. It can be carried out.

FIG. 2 is a diagram showing a modification of this embodiment. In this example, the roller 17 is used to press the transfer body 11 shown in FIG. Thus, a fine pattern can be formed on the surface of the transfer object even if the transfer object has a convex shape. The other steps (a), (c) and (d) are the same as in the embodiment of FIG.

FIG. 3 is a view showing a method of transferring a fine pattern according to a second embodiment of the present invention. In this example,
The transfer member 20 is made of a flexible material. Then, as shown in (a), the surface of the fine uneven pattern 12 of the transfer body 20 is arranged at a position separated from the resist film 15 applied to the surface of the transfer body 13. And
As shown in (b), the concave and convex pattern 12 of the transfer body 20 is pressed against the resist film 15 by being pressed by rotation with the roller 17, and the fine concave and convex pattern is transferred to the resist film 15. As shown in (c), a resist pattern 15a is thereby formed. Using this as a mask, irradiation of a high-speed atomic beam is performed to etch the transferred body 13 to form a fine concavo-convex pattern 13a on its surface as shown in FIG. is there. In this embodiment, since the transfer body 20 has flexibility, for example, the transferred body 13 does not have a flat processed surface,
Even if it has undulation, transfer processing of a fine pattern is possible.

FIG. 4 is a view showing a method for transferring a fine pattern according to a third embodiment of the present invention. In this embodiment, a roller 21 having a fine concavo-convex pattern on the outer peripheral surface is used as a transfer body. That is, as shown in FIG.
As in the case of the above-described example, the transfer target 13 having the surface coated with the resist film 15 is prepared. Then, as shown in (b), a roller provided with a fine uneven pattern on the outer peripheral surface is rotated while being pressed, whereby a transfer pattern of fine unevenness is formed on the resist film 15. Then, the subsequent steps (c),
(D) is similar to each of the above embodiments. According to this transfer processing method, even if the transfer target body 13 has a surface shape having, for example, a waveform, a fine uneven pattern can be accurately transferred by using a roller.

FIG. 5 is a diagram showing a method for transferring a fine pattern according to a fourth embodiment of the present invention. In this embodiment, as shown in (a), a roller 21a having a fine uneven pattern in the axial direction is used as a transfer body. Then, similarly to the above-described example, the transfer target 13 having the surface coated with the resist film 15 is prepared. In this case, quartz glass is used as the transfer object. By pressing the roller 21a while rotating, a transfer pattern of fine unevenness is formed on the resist film 15 as shown in FIG. Then, as shown in (c), irradiation with a high-speed atomic beam is performed to etch the resist film 15 and the transfer object 13 on the lower surface thereof. As a result, as shown in (d), the concavo-convex pattern (see (b)) formed on the resist film 15 is transferred and formed on the transfer object 13 as it is.

In this case, the pitch A of the concavo-convex pattern is set to 0.
The depth B is set to 0.1 μm to about 1 μm to 100 μm.
It can be formed to a size of about 100 μm. Such a concavo-convex pattern provided on the quartz glass surface can be suitably used for diffraction, pickup lenses, Fresnel lenses, and the like. The processing conditions using a high-speed atomic beam include, for example, SF ₆ gas, a discharge voltage of 3 kv, a discharge current of 30 to 50 mA, and a beam diameter of 80 mm.
φ, the cooling temperature of the substrate is preferably about −30 to −50 ° C., and the processing speed is 100 to 300 ° / min. Further, the roller may be manufactured as an integral type, or may be manufactured by separately manufacturing uneven portions and combining them. And resist film 1
The concavities and convexities of No. 5 can be formed by rotating the roller while pressing it with a constant pressure using an appropriate jig.

FIG. 6 is a diagram showing a modification of the fourth embodiment. In this case, as shown in FIG.
The pitch of the uneven pattern along the direction of the rotation axis is changed. As a result, as shown in (d), the pattern according to the uneven pattern of the roller shown in (a) is transferred to the uneven pattern formed on the transferred body 13 as well.

FIG. 7 is a diagram showing a method for transferring a fine pattern according to a fifth embodiment of the present invention. In this embodiment, a polymerizable polymer film 22 is used in place of the resist film of the above embodiment. That is, as shown in (a), a transfer body 11 having a fine uneven pattern 12 with a wavelength equal to or less than the wavelength of light on the surface is prepared, and a polymerizable polymer film (SiO ₂ ) in a semi-solid state is disposed on the surface. The transferred object 13 provided is prepared. Then, the transfer body 11 is pressed against the polymerizable polymer film 22 as shown in FIG. Then, by separating the transfer body 11, a transfer pattern 22a is formed on the polymerizable polymer film as shown in (c). Then, by heating the polymerizable polymer film in the semi-solid state, the polymerizable polymer film is transformed into the SiO ₂ film 22b as shown in FIG. In order to control the deteriorated state of the polymerizable polymer film 22 by heating, it is important to control the temperature using a heat control mechanism. Since the SiO ₂ film 22b has sufficient processing resistance to an energy beam such as a high-speed atomic beam, the SiO ₂ film 22b functions as a mask having a sufficient strength when etching with a high-speed atomic beam as shown in FIG. . This makes it possible to perform processing with a high aspect ratio on the transfer target.

FIG. 8 shows a method for transferring a fine pattern according to a sixth embodiment of the present invention. In this example,
(A) As shown in FIG.
Is coated with a water-soluble thin film 24. This thin film 2
The film thickness of No. 4 is, for example, about 10 to 50 nm, which is sufficiently smaller than the thickness of the resist or polymerizable polymer film 15 of 10 to 100 nm. Then, as shown in FIG.
1 to transfer a fine pattern onto the resist film 15 and the like. Then, it is immersed in water as shown in FIG. As a result, the water-soluble thin film 24 dissolves in water, and the transfer body 1
1 can be easily pulled out from the resist pattern side. That is, the release becomes easy, and it is possible to prevent the fine uneven pattern formed on the resist or the like from being damaged during the release. Subsequent steps (d) and (e) are the same as in the above-described embodiments.

FIG. 9 shows a method for transferring a fine pattern according to a seventh embodiment of the present invention. As shown in FIG. 9A, a transfer body 11 having a fine pattern 12 is prepared. This transfer body is made of a metal material. As shown in FIG. 9B, a material to be transferred, such as glass, resin (PMMA), or a plastic material, is poured onto the transfer body 11 in a state 13x in which the material is melted by heating. Next, as shown in FIG.
Using the force generator 26, pressure is applied to the transfer-receiving material 13x. As a result, the material 13 in the molten state of the transfer object is
The x spreads to every corner of the fine pattern which is the fine unevenness of the transfer body, and the fine pattern 12 of the transfer body can be accurately transferred by cooling.

Next, as shown in FIG. 9D, the transferred material 13c having the transferred fine pattern 12a is completed by separating the cooled material 13c from the transfer material 11. At the time of mold release, if the transfer body is a metal material and the transfer body material is glass or resin, these have different coefficients of thermal expansion. In particular, the transfer body material is poured into the transfer body in a heated state, and then cooled. , And can be easily released from the mold.

FIG. 10 shows a method for transferring a fine pattern according to the eighth embodiment of the present invention. In this embodiment, a soluble thin film 28 is applied to the surface of a transfer member 11 made of a metal material having a fine pattern 12. This soluble thin film 2
8 is water-soluble and is deposited for later release. Then, as shown in FIG. 10B, the material 13x that has been heated and melted is poured. Next, as shown in FIG. 10C, by applying pressure using a roller 17, a light-transmissive material 13x, which is a material of the transfer target, is finely patterned.
To every corner. And by cooling,
A transfer pattern 13c of the solid fine pattern 12 is formed on the material 13x of the transfer target.

Then, as shown in FIG.
9, the soluble material 28 dissolves in the water 30, so that the transfer target 1
3c is separated from the transfer body 11. As a result, FIG.
As shown in (e), the transferred body 13c having the fine pattern transferred from the transfer body is completed.

FIG. 11 shows an example of a method for manufacturing a transfer body. As shown in FIG. 11A, a resist 31 is applied to the metal material 11. As the metal material 11, for example, stainless steel (Ns-P / SUS) is suitable. Next, as shown in FIG. 11B, direct exposure with an electron beam is performed to form an exposure pattern 31a by the electron beam. According to this electron beam direct exposure method, since an electron beam is not affected by a wavelength limit like a light beam, it is possible to easily form a fine pattern having a wavelength equal to or less than the wavelength of light. Next, as shown in FIG. 11C, development is performed, and the resist pattern 31b is formed by removing the exposed portion 31a of the resist film 31 except for the exposed portion 31a. The resist pattern 31b is a fine pattern drawn directly by an electron beam.

Then, rinsing and post-baking after development are performed to increase the processing resistance of the resist pattern 31b. Then, as shown in FIG.
Is used as a mask to etch the metal material 11. This etching is preferably performed using a fast atom beam (FAB). In particular, a high-speed atomic beam irradiated by a parallel-plate type FAB source has high straightness and does not cause a problem of beam diffusion due to electric charges.
By using b as a mask, an etching process with an extremely high aspect ratio can be performed on the metal material 11. Thereby, the transfer body 11 made of a metal material having the fine pattern 12 can be formed.

The above embodiment is merely an example. For example, X-ray exposure may be used instead of electron beam exposure.
Plasma etching may be used instead of etching with high-speed atomic beams. Further, the material of the transfer body may be a silicon material, ceramics, a resin material, or the like instead of metal. Thus, various modifications can be made without departing from the spirit of the present invention.

[0040]

According to the present invention as described above,
An object to be transferred provided with a fine pattern can be manufactured easily and at low cost. Thereby, the transfer of the fine pattern to the photoresist or the like using the evanescent field can be performed using the mask for mass production. Therefore, the transfer of the fine pattern including the light wavelength limit or less is used for the manufacture of the semiconductor LSI and the like. It becomes possible. Further, application to an optical disk device or the like is also possible.

[Brief description of the drawings]

FIG. 1 is a diagram illustrating a method for transferring a fine pattern according to a first embodiment of the present invention.

FIG. 2 is a view showing a modified example of the fine pattern transfer processing method shown in FIG. 1;

FIG. 3 is a view showing a method for transferring a fine pattern according to a second embodiment of the present invention.

FIG. 4 is a view showing a method for transferring a fine pattern according to a third embodiment of the present invention.

FIG. 5 is a view showing a method for transferring a fine pattern according to a fourth embodiment of the present invention.

FIG. 6 is a view showing a method for transferring a fine pattern according to a modification of the fourth embodiment.

FIG. 7 is a view showing a fine pattern transfer processing method according to a fifth embodiment of the present invention.

FIG. 8 is a view illustrating a method for transferring a fine pattern according to a sixth embodiment of the present invention.

FIG. 9 is a view showing a fine pattern transfer processing method according to a seventh embodiment of the present invention.

FIG. 10 is a view showing a method for transferring a fine pattern according to an eighth embodiment of the present invention.

FIG. 11 is a diagram illustrating an example of a method for producing a transfer body of the present invention.

[Explanation of symbols]

 REFERENCE SIGNS LIST 11 transfer body 12 fine pattern 13 transferred body 13a fine pattern transferred to transferred body 15 resist film (semi-solid material) 15a resist pattern

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme court ゛ (Reference) H01L 21/302 Z (72) Inventor Katsunori Ichiki 4-2-1 Motofujisawa, Fujisawa-shi, Kanagawa Stock Company (72) Inventor Toru Satake 4-2-1 Motofujisawa, Fujisawa-shi, Kanagawa Prefecture In-house Ebara Research Institute (72) Inventor Yotaro Hatamura 12-12-11 Kohinata, Bunkyo-ku, Tokyo (72) Inventor Masayuki Nakao D-805 4-272 Shinmatsudo, Matsudo-shi, Chiba

Claims (5)

[Claims] 1. A transfer body having a fine concavo-convex pattern is prepared, a semi-solid material is applied to an object to be transferred, and the concavo-convex pattern of the transfer body is brought into close contact with the semi-solid material and pressurized. Transferring the uneven pattern on the semi-solid material, and irradiating an energy beam to the uneven pattern on the semi-solid material, thereby transferring the uneven pattern along the uneven pattern on the semi-solid material onto the object to be transferred. Transfer processing method for fine patterns. 2. The fine pattern transfer process according to claim 1, wherein the transfer member is a roller, and the concave and convex pattern is transferred onto the semi-solid material by rotating and pressing the roller. Method. 3. The transfer body is a flexible body, is disposed apart from the surface of the semi-solid material of the object to be transferred, and is pressed against the semi-solid material by rotating and pressing with a roller, 2. The method according to claim 1, wherein the transfer of the concave-convex pattern is performed on the semi-solid material. 4. A transfer body having a fine concavo-convex pattern is prepared, and a material to be transferred is poured onto the concavo-convex pattern of the transfer body in a state of being melted by heating, and then cooled to be transferred. A method for transferring a fine pattern, comprising: solidifying a material to be a body, transferring the concavo-convex pattern, and then separating the material from the transfer body and taking it out as a transferred body. 5. A resist is applied to a substrate to be a transfer body,
A fine pattern is formed on the resist by electron beam or X-ray exposure and development, and a high-speed atomic beam is irradiated using the resist pattern as a mask to form a fine transfer pattern on the transfer body. A method for producing a transfer body, comprising: