CN100386285C - Low temp. sintering niobate microwave dielectric ceramic and preparation process thereof - Google Patents
Low temp. sintering niobate microwave dielectric ceramic and preparation process thereof Download PDFInfo
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- CN100386285C CN100386285C CNB2006100181125A CN200610018112A CN100386285C CN 100386285 C CN100386285 C CN 100386285C CN B2006100181125 A CNB2006100181125 A CN B2006100181125A CN 200610018112 A CN200610018112 A CN 200610018112A CN 100386285 C CN100386285 C CN 100386285C
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Abstract
The present invention discloses low-temperature sintered high-frequency niobate dielectric ceramic which is used for microwave components and microwave ceramic capacitors or temperature compensation capacitors. The ceramic takes (Ba<1-x>Sr<x>) 4LiNb<3-y>Ta<y>O12 as the basic phase, wherein 0.00<=x<=1 and 0.00<=y<=2. By adopting a corresponding method to prepare the ceramic, the ceramic is well sintered, the high-frequency dielectric constant reaches 40 to 90, and the ceramic has low consumption, small temperature coefficient of resonance frequency and great application value in industry.
Description
Technical field
The present invention relates to dielectric ceramic material, particularly relate to microwave devices such as the dielectric resonator that uses in microwave frequency, wave filter, and the dielectric ceramic material of ceramic condenser or thermo-compensation capacitor and preparation method thereof.
Background technology
Microwave dielectric ceramic is meant and is applied in microwave frequency band (mainly being UHF, the SHF frequency range) circuit as dielectric material and finishes the pottery of one or more functions, in modern communication, be widely used as components and parts such as resonator, wave filter, dielectric substrate, medium guided wave loop, it is the key foundation material of modern communication technology, at aspects such as portable mobile phone, automobile telephone, cordless telephone, telestar susceptor, military radars crucial application is arranged, in the miniaturization of modern communication instrument, integrated process, just bringing into play increasing effect.
Be applied to the dielectric ceramic of microwave frequency band, should satisfy the requirement of following dielectric characteristics: the relative permittivity ε that (1) is high
rBe beneficial to miniaturization of devices, general requirement ε
r〉=20; (2) high quality factor q value or dielectric loss tan δ are to reduce noise, general requirement Qf 〉=3000; (3) the temperature factor τ of resonant frequency
fAs far as possible little of guaranteeing that device has good thermostability, general requirement-10/ ℃≤τ
f≤+10ppm/ ℃.In the world from late 1930s just the someone attempt dielectric substance is applied to microwave technology.
According to relative permittivity ε
rSize with use the different of frequency range, the microwave-medium ceramics that is developed He developing can be divided into 3 classes usually.
(1) low ε
rWith the microwave dielectric ceramic of high Q value, mainly be BaO-MgO-Ta
2O
5, BaO-ZnO-Ta
2O
5Or BaO-MgO-Nb
2O
5, BaO-ZnO-Nb
2O
5System or the composite system MWDC material between them.Its ε
r=25~30, Q=(1~3) * 10
4(under f 〉=10GHz), τ
f≈ 0.Be mainly used in the microwave communication equipments such as direct broadcasting satellite of f 〉=8GHz as the dielectric resonance device.
(2) medium ε
rWith the microwave dielectric ceramic of Q value, mainly be with BaTi
4O
9, Ba
2Ti
9O
20(Zr, Sn) TiO
4Deng the MWDC material that is base, its ε
r=35~40, Q=(6~9) * 10
3(under f=3~4GHz), τ
f≤ 5ppm/ ℃.Be mainly used in interior microwave military radar of 4~8GHz range of frequency and the communication system as the dielectric resonance device.
(3) high ε
rAnd the lower microwave dielectric ceramic of Q value is mainly used in civilian mobile communcations system in 0.8~4GHz range of frequency, and this also is the emphasis of microwave dielectric ceramic research.Since the eighties, physiognomy secondary such as Kolar, Kato are existing and studied perovskite-like tungsten bronze type BaO-Ln
2O
3-TiO
2Series (Ln=La, Sm, Nd, Pr etc., abbreviation BLT system), complex perovskite structure CaO-Li
2O-Ln
2O
3-TiO
2Series, lead base series material, Ca
1-xLn
2x/3TiO
3Be contour ε
rMicrowave dielectric ceramic, the wherein BaO-Nd of BLT system
2O
3-TiO
2Material dielectric constant reaches 90, lead base series (Pb, Ca) ZrO
3Specific inductivity reaches 105).
Accelerated development along with information technology, mobile communication system develops to high frequencyization, miniaturization, integrated, high reliability direction, medium dielectric constant material system specific inductivity is on the low side, is difficult to satisfy the demand of further miniaturization under the prerequisite that keeps the Q value not reduce.And the high dielectric constant material system mainly is that over-all properties is relatively poor, and the Qf value is less, is difficult to satisfy the growth requirement of high frequencyization, high reliability.The sintering temperature of these material systems generally is higher than 1300 ℃ in addition, can not be directly and low melting point metals such as Ag, Cu burn the formation laminated ceramic capacitor altogether.
Summary of the invention
The purpose of this invention is to provide a class and have low-loss and good thermostability, have the high-frequency dielectric constant simultaneously and reach 40~90, can be at 1300 ℃ of following agglomerating dielectric ceramic materials and preparation method thereof.
Dielectric ceramic material of the present invention is made up of Ba, Sr, Li, Nb and the Ta by oxide form, and is principal phase with the crystalline phase of following composition,
(Ba
1-xSr
x)
4LiNb
3-yTa
yO
12
In the formula, 0.00≤x≤1,0.00≤y≤2.
This dielectric ceramic material is prepared from as follows.
Method one: at first be the BaCO more than 99.9% with purity
3, SrCO
3, Li
2CO
3, Nb
2O
5With Ta
2O
5Starting powder by batching in the described compositing range, wet ball-milling mixed 12~24 hours, solvent is a distilled water, the pre-burning 4~8 hours in 900~1250 ℃ of air atmosphere of oven dry back, after in preburning powder, adding binding agent and granulation then, compression moulding again, sintering 1~8 hour in 950~1300 ℃ of air atmosphere at last, described binding agent employing mass concentration is 5% polyvinyl alcohol water solution, and dosage accounts for 5%~15% of powder total mass.
Method two: at first be the Li more than 99.9% with purity
2CO
3With Nb
2O
5Starting powder by molecular ratio 1~1.05: 2 mixes, wet ball-milling mixed 12~24 hours, solvent is a distilled water, the oven dry back in 1000~1150 ℃ of air atmosphere pre-burning 4~8 hours with synthetic LiNbO
3, be the BaCO more than 99.9% then with purity
3, SrCO
3, Nb
2O
5And Ta
2O
5Starting powder and synthetic LiNbO
3By batching in the described compositing range, wet ball-milling mixed 12~24 hours, solvent is a distilled water, calcined 4~8 hours in 900~1250 ℃ of air atmosphere the oven dry back, after in calcined powder, adding binding agent and granulation then, compression moulding again, sintering more than 1 hour in 950~1300 ℃ of air atmosphere at last, described binding agent employing mass concentration is 5% polyvinyl alcohol water solution, and dosage is 5%~15% of powder total mass.
This dielectric ceramic material or be added with parafacies, the purpose that adds parafacies are in order to adjust sintering temperature, and parafacies is low-melting oxide compound V
2O
5, CuO and MnO a kind of or their mixture, incorporation accounts for 0.25%~5% of powder total mass; Or parafacies is B
2O
3, incorporation accounts for 5%~25% of powder total mass.
This dielectric ceramic material has the preparation method of principal phase and parafacies, make earlier pre-burning principal phase powder as stated above, the purity of contained element is the oxide powder more than 99.9% in then pre-burning principal phase powder and parafacies being formed, mixed 12~24 hours by the weight percent wet ball-milling of setting, solvent is a distilled water, binding agent and granulation are added in the oven dry back, compression moulding again, sintering more than 1 hour in 950~1300 ℃ of air atmosphere at last, described binding agent employing mass concentration is 5% polyvinyl alcohol water solution, and dosage is 1%~15% of powder total mass.Binding agent or employing polyglycol solution.
Description of drawings
Fig. 1 consists of Ba
4LiNb
3O
12X-ray diffractogram
Embodiment
Table 1 shows several specific exampless and the microwave dielectric property thereof that constitutes each component content of the present invention.Its preparation method carries out material phase analysis with the ceramic sample of powder X-ray diffractometry after to sintering as mentioned above, and Fig. 1 is the X ray diffracting spectrum of embodiment 1, carries out the evaluation of microwave dielectric property with the cylindrical dielectric resonator method.
This pottery can be widely used in the manufacturing of microwave devices such as various dielectric resonators, wave filter, can satisfy the Technology Need of systems such as mobile communication, satellite communications.
With the Elements C a of Ba, Sr analog structure and chemical property, Pb etc., with the element ti of Nb analog structure and chemical property, Sn, Zr etc. also can make the dielectric ceramic with analogous crystalline structure of the present invention and performance.
[table 1]
x | y | Molecular formula | Sintering temperature | ε r | Qf (GHz) | τ f (ppm/℃) |
0 | 0 | Ba 4LiNb 3O 12 | 950 | 90 | 13000 | 15 |
0.25 | 0.5 | Ba 3SrLiNb 2.5Ta 0.5O 12 | 1100 | 70 | 23000 | 2 |
0.5 | 1 | Ba 2Sr 2LiNb 2TaO 12 | 1200 | 58 | 24000 | -8 |
0.75 | 2 | BaSr 3LiNbTa 2O 12 | 1250 | 48 | 27000 | -16 |
1 | 2 | Sr 4LiNbTa 2O 12 | 1300 | 40 | 15000 | -30 |
Claims (3)
1. low-temperature sintering columbate microeave dielectric ceramic is made up of the oxide compound of the Nb of the Li of the Ba of oxide form and/or Sr, oxide form, oxide form, optional Ta, and is principal phase with the crystalline phase of following composition,
(Ba
1-xSr
x)
4LiNb
3-yTa
yO
In the formula, 0.00≤x≤1 0.00≤y≤2.
2. the preparation method of the described low-temperature sintering columbate microeave dielectric ceramic of claim 1 is characterized in that: at first, be BaCO more than 99.9% with purity
3Or/and SrCO
3, Li
2CO
3, Nb
2O
5With optional Ta
2O
5Starting powder by batching in the described crystalline phase compositing range of claim 1, wet ball-milling mixed 12~24 hours, solvent is a distilled water, the pre-burning 4~8 hours in 900~1250 ℃ of air atmosphere of oven dry back, after in preburning powder, adding binding agent and granulation then, compression moulding again, sintering more than 1 hour in 950~1300 ℃ of air atmosphere at last, described binding agent employing mass concentration is 5% polyvinyl alcohol water solution, and dosage is 5%~15% of powder total mass.
3. the preparation method of the described low-temperature sintering columbate microeave dielectric ceramic of claim 1 is characterized in that: at first, be Li more than 99.9% with purity
2CO
3With Nb
2O
5Starting powder by molecular ratio 1~1.05: 2 mixes, wet ball-milling mixed 12~24 hours, solvent is a distilled water, the oven dry back in 1000~1150 ℃ of air atmosphere pre-burning 4~8 hours with synthetic LiNbO
3, be the BaCO more than 99.9% then with purity
3Or/and SrCO
3, Nb
2O
5With optional Ta
2O
5Starting powder and synthetic LiNbO
3By batching in the described crystalline phase compositing range of claim 1, wet ball-milling mixed 12~24 hours, solvent is a distilled water, calcined 4~8 hours in 900~1250 ℃ of air atmosphere the oven dry back, after in calcined powder, adding binding agent and granulation then, compression moulding again, sintering more than 1 hour in 950~1300 ℃ of air atmosphere at last, described binding agent employing mass concentration is 5% polyvinyl alcohol water solution, and dosage is 5%~15% of powder total mass.
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CN100436368C (en) * | 2007-05-18 | 2008-11-26 | 厦门大学 | Microwave medium ceramic material in series of low temperature sintered Ba5(Nb, Sb)4O15, and preparation method |
CN101538158B (en) * | 2009-04-11 | 2011-11-09 | 桂林工学院 | Preparation method of composite niobate microwave dielectric ceramic material sintered at low temperature |
CN101538157B (en) * | 2009-04-11 | 2011-11-09 | 桂林工学院 | Tantalate microwave dielectric ceramic with high quality factor sintered at low temperature and preparation method thereof |
CN101531511B (en) * | 2009-04-11 | 2011-11-09 | 桂林工学院 | High thermal stability microwave dielectric ceramic material sintered at low temperature and preparation method thereof |
CN102424578A (en) * | 2011-09-03 | 2012-04-25 | 桂林理工大学 | Preparation method for BaO-Li2O-Nb2O5-Sb2O5 microwave dielectric ceramics material |
CN102503374A (en) * | 2011-09-30 | 2012-06-20 | 桂林理工大学 | Microwave dielectric ceramic Ba(4-x)SrxLiSb3O12 capable of being sintered at low temperature and preparation method thereof |
KR101994734B1 (en) * | 2014-04-02 | 2019-07-01 | 삼성전기주식회사 | Multilayered electronic component and manufacturing method thereof |
CN105669195B (en) * | 2016-01-04 | 2018-08-03 | 张家港保税区灿勤科技有限公司 | Low dielectric constant and high Q value microwave dielectric ceramic materials and preparation method thereof |
EP3778531A4 (en) * | 2018-04-11 | 2022-04-27 | Shoei Chemical Inc. | Dielectric ceramic composition and ceramic electronic component |
JP7136196B2 (en) * | 2018-04-11 | 2022-09-13 | 昭栄化学工業株式会社 | Dielectric porcelain composition and ceramic electronic parts |
CN110079316B (en) * | 2019-05-30 | 2021-10-08 | 江苏师范大学 | Eu (Eu)3+Doped fluoroniobium tantalate fluorescent powder and synthesis and application thereof |
CN110066656B (en) * | 2019-05-30 | 2021-10-08 | 江苏师范大学 | Mn (manganese)2+Doped fluoroniobium tantalate fluorescent powder and synthesis and application thereof |
CN114605151B (en) * | 2022-04-24 | 2022-12-09 | 西安理工大学 | Gd-Ta co-doped tungsten bronze structure ferroelectric energy storage ceramic material and preparation method thereof |
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JP2002338352A (en) * | 2001-05-16 | 2002-11-27 | Tdk Corp | Piezoelectric ceramic |
CN1514811A (en) * | 2001-06-15 | 2004-07-21 | Tdk��ʽ���� | Piezoelectric porcelain and method for preparation thereof |
CN1609047A (en) * | 2003-03-14 | 2005-04-27 | 株式会社电装 | Crystal oriented ceramics and production method of same |
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JP2002338352A (en) * | 2001-05-16 | 2002-11-27 | Tdk Corp | Piezoelectric ceramic |
CN1514811A (en) * | 2001-06-15 | 2004-07-21 | Tdk��ʽ���� | Piezoelectric porcelain and method for preparation thereof |
CN1609047A (en) * | 2003-03-14 | 2005-04-27 | 株式会社电装 | Crystal oriented ceramics and production method of same |
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