CN102249670A - Low temperature sintered microwave dielectric ceramic Li2Ba1-xSrxTi4O16 and preparation method thereof - Google Patents
Low temperature sintered microwave dielectric ceramic Li2Ba1-xSrxTi4O16 and preparation method thereof Download PDFInfo
- Publication number
- CN102249670A CN102249670A CN2011100956064A CN201110095606A CN102249670A CN 102249670 A CN102249670 A CN 102249670A CN 2011100956064 A CN2011100956064 A CN 2011100956064A CN 201110095606 A CN201110095606 A CN 201110095606A CN 102249670 A CN102249670 A CN 102249670A
- Authority
- CN
- China
- Prior art keywords
- xsrxti4o16
- li2ba1
- hours
- preparation
- equal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Inorganic Insulating Materials (AREA)
- Compositions Of Oxide Ceramics (AREA)
Abstract
The invention discloses a low temperature sintered microwave dielectric ceramic Li2Ba1-xSrxTi4O16 and a preparation method thereof. The components of the ceramic are shown in the formula of Li2Ba1-xSrxTi4O16, wherein x is more than or equal to 0 and less than or equal to 1. The preparation method comprises the following steps of: preparing raw materials of BaCO3, SrCO3, Li2CO3 and TiO2 original powder with the purity of over 99.9 percent according to the formula of Li2Ba1-xSrxTi4O16, wherein x is more than or equal to 0 and less than or equal to 1; mixing the prepared raw materials for 12 hours through wet ball-milling, wherein a solvent is distilled water; drying, and pre-sintering at 900DEG C in the air for 6 hours; adding an adhesive into the pre-sintered powder, granulating, and pressing for formation; and sintering at the temperature of between 950 and 1,050DEG C in the air for 4 hours, wherein the adhesive is a 5 mass percent polyvinyl alcohol solution and is 3 percent of the total weight of the pre-sintered powder. The ceramic is well sintered at the temperature of between 950 and 1,050DEG C, has the dielectric constant of 32-40, the quality factor Qf value of 60,000-100,000GHz, small temperature coefficient of resonance frequency, and great application value in industry.
Description
Technical field
The present invention relates to dielectric ceramic material, particularly relate to microwave devices such as the dielectric resonator that uses in microwave frequency, wave filter, and the dielectric ceramic material of ceramic condenser or thermo-compensation capacitor and preparation method thereof.
Background technology
Microwave dielectric ceramic is meant and is applied in microwave frequency band (mainly being UHF, the SHF frequency range) circuit as dielectric material and finishes the pottery of one or more functions, in modern communication, be widely used as components and parts such as resonator, wave filter, dielectric substrate, medium guided wave loop, it is the key foundation material of modern communication technology, at aspects such as portable mobile phone, automobile telephone, cordless telephone, telestar susceptor, military radars crucial application is arranged, in the miniaturization of modern communication instrument, integrated process, just bringing into play increasing effect.
Be applied to the dielectric ceramic of microwave frequency band, should satisfy the requirement of following dielectric characteristics: the relative permittivity ε that (1) is high
rBe beneficial to miniaturization of devices, general requirement ε
r〉=20; (2) high quality factor q value or dielectric loss tan δ are to reduce noise, general requirement Qf 〉=3000GHz; (3) the temperature factor τ of resonant frequency
fAs far as possible little of guaranteeing that device has good thermostability, general requirement-10/ ℃≤τ
f≤+10ppm/ ℃.In the world from late 1930s just the someone attempt dielectric substance is applied to microwave technology.
According to relative permittivity ε
rSize with use the different of frequency range, the microwave-medium ceramics that is developed He developing can be divided into 3 classes usually.
(1) low ε
rWith the microwave dielectric ceramic of high Q value, mainly be BaO-MgO-Ta
2O
5, BaO-ZnO-Ta
2O
5Or BaO-MgO-Nb
2O
5, BaO-ZnO-Nb
2O
5System or the composite system MWDC material between them.Its ε
r=25~30, Q=(1~2) * 10
4(under f 〉=10GHz), τ
f≈ 0.Be mainly used in the microwave communication equipments such as direct broadcasting satellite of f 〉=8GHz as the dielectric resonance device.
(2) medium ε
rWith the microwave dielectric ceramic of Q value, mainly be with BaTi
4O
9, Ba
2Ti
9O
20(Zr, Sn) TiO
4Deng the MWDC material that is base, its ε
r=35-40, Q=(6~9) * 10
3(f=3~-4GHz under), τ
f≤ 5ppm/ ℃.Be mainly used in interior microwave military radar of 4~8GHz range of frequency and the communication system as the dielectric resonance device.
(3) high ε
rAnd the lower microwave dielectric ceramic of Q value is mainly used in civilian mobile communcations system in 0.8~4GHz range of frequency, and this also is the emphasis of microwave dielectric ceramic research.Since the eighties, physiognomy secondary such as Kolar, Kato are existing and studied perovskite-like tungsten bronze type BaO-Ln
2O
3-TiO
2Series (Ln=La, Sm, Nd, Pr etc., abbreviation BLT system), complex perovskite structure CaO-Li
2O-Ln
2O
3-TiO
2Series, lead base series material, Ca
1-xLn
2x/3TiO
3Be contour ε
rMicrowave dielectric ceramic, the wherein BaO-Nd of BLT system
2O
3-TiO
2Material dielectric constant reaches 90, lead base series (Pb, Ca) ZrO
3Specific inductivity reaches 105.
More than the sintering temperature of these material systems generally be higher than 1300 ℃, can not be directly and low melting point metals such as Ag, Cu burn the formation laminated ceramic capacitor altogether.In recent years, along with LTCC Technology (LowTemperature Co-fired Ceramics, the requirement of development LTCC) and the development of microwave multilayer device, domestic and international research personnel have carried out exploring widely and studying to some low fever's system materials, mainly be to adopt devitrified glass or glass-ceramic composite system, because of low melting glass has higher relatively dielectric loss mutually, the existence of glassy phase has improved the dielectric loss of material greatly.Therefore the low fired microwave dielectric ceramic material of the no glassy phase of development is the emphasis of current research.But still more limited for the system that is used for low fever's microwave-medium ceramics, this has limited the development of low temperature co-fired technology and microwave multilayer device to a great extent.
Summary of the invention
The purpose of this invention is to provide a kind of have low-loss and good thermostability, have the high-frequency dielectric constant simultaneously and reach 32~40, the Qf value can be at 950-1050 ℃ of agglomerating composite oxides microwave dielectric ceramic material Li up to 60000~100000GHz
2Ba
1-xSr
xTi
4O
16And preparation method thereof.
The chemical constitution general formula of composite oxides microwave dielectric ceramic material of the present invention is: Li
2Ba
1-xSr
xTi
4O
16, wherein: 0≤x≤1.
Above-mentioned composite oxides microwave dielectric ceramic material is prepared from as follows:
(1) with purity is BaCO more than 99.9%
3, SrCO
3, Li
2CO
3And TiO
2Starting powder press Li
2Ba
1-xSr
xTi
4O
16Form batching, wherein, 0≤x≤1;
(2) step (1) confected materials wet ball-milling was mixed 12 hours, solvent is a distilled water, the pre-burning 6 hours in 900 ℃ of air atmosphere of oven dry back, in preburning powder, add binding agent and granulation then after, compression moulding again, sintering 4h in 950-1050 ℃ of air atmosphere at last.
Described binding agent employing mass concentration is 5% polyvinyl alcohol solution, and dosage accounts for 3% of preburning powder total amount.
Microwave dielectric ceramic material of the present invention is good at 950-1050 ℃ of sintering, and its specific inductivity reaches 32~40, and quality factor q f value is up to 60000~100000GHz, and temperature coefficient of resonance frequency is little, industrial great using value is arranged.
Embodiment
Embodiment:
Table 1 shows several specific embodiments and the microwave dielectric property thereof that constitutes each component content of the present invention.Its preparation method carries out the evaluation of microwave dielectric property as mentioned above with the cylindrical dielectric resonator method.
Table 1:
This pottery can be widely used in the manufacturing that various dielectric resonances play microwave devices such as device, wave filter, can satisfy the Technology Need of systems such as mobile communication, satellite communications.
With the element such as the Ca of Ba, Sr analog structure and chemical property, Pb etc., also can make dielectric ceramic with analogous crystalline structure of the present invention and performance.
Claims (2)
1. composite oxides is characterized in that the chemical constitution general formula of described composite oxides is: Li as the application of microwave dielectric ceramic
2Ba
1-xSr
xTi
4O
16, wherein≤x≤1.
2. the preparation method of composite oxides according to claim 1 is characterized in that concrete steps are:
(1) with purity is BaCO more than 99.9%
3, SrCO
3, Li
2CO
3And TiO
2Starting powder press Li
2Ba
1-xSr
xTi
4O
16Form batching, wherein, 0≤x≤1;
(2) step (1) confected materials wet ball-milling was mixed 12 hours, solvent is a distilled water, the pre-burning 6 hours in 900 ℃ of air atmosphere of oven dry back, in preburning powder, add binding agent and granulation then after, compression moulding again, sintering 4h in 950-1050 ℃ of air atmosphere at last;
Described binding agent employing mass concentration is 5% polyvinyl alcohol solution, and dosage accounts for 3% of preburning powder total amount.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2011100956064A CN102249670A (en) | 2011-04-15 | 2011-04-15 | Low temperature sintered microwave dielectric ceramic Li2Ba1-xSrxTi4O16 and preparation method thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2011100956064A CN102249670A (en) | 2011-04-15 | 2011-04-15 | Low temperature sintered microwave dielectric ceramic Li2Ba1-xSrxTi4O16 and preparation method thereof |
Publications (1)
Publication Number | Publication Date |
---|---|
CN102249670A true CN102249670A (en) | 2011-11-23 |
Family
ID=44977292
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2011100956064A Pending CN102249670A (en) | 2011-04-15 | 2011-04-15 | Low temperature sintered microwave dielectric ceramic Li2Ba1-xSrxTi4O16 and preparation method thereof |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN102249670A (en) |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102887703A (en) * | 2012-10-17 | 2013-01-23 | 桂林理工大学 | Li-base low-temperature-sinterable microwave dielectric ceramic Li2Ba1-xSrxTi6O14 and preparation method thereof |
CN102898135A (en) * | 2012-10-12 | 2013-01-30 | 桂林电子科技大学 | High-dielectric constant microwave dielectric ceramic material and preparation method thereof |
CN103130496A (en) * | 2013-03-25 | 2013-06-05 | 桂林理工大学 | Low-dielectric-constant microwave dielectric ceramic LiAlSi2O6 and preparation method thereof |
CN104649662A (en) * | 2015-02-25 | 2015-05-27 | 桂林理工大学 | Temperature-stable low-loss microwave dielectric ceramic Li6Ba4Ti18.5O44 and preparation method thereof |
CN104671776A (en) * | 2015-02-04 | 2015-06-03 | 桂林理工大学 | Low-loss low-dielectric-constant microwave dielectric ceramic Li2Ba3Ti8O20 and preparation method thereof |
CN104817322A (en) * | 2015-04-20 | 2015-08-05 | 桂林理工大学 | Temperature-stable capacitor ceramic material Sr4EuTiNb9O30 and preparation method thereof |
CN104817323A (en) * | 2015-04-20 | 2015-08-05 | 桂林理工大学 | Temperature-stable ceramic capacitor dielectric material Sr4GdTiNb9O30 and preparation method thereof |
CN104926300A (en) * | 2015-04-20 | 2015-09-23 | 桂林理工大学 | Temperature-stable capacitor Sr4SmTiNb9O30 ceramic and preparation method therefor |
CN105801109A (en) * | 2016-04-01 | 2016-07-27 | 桂林理工大学 | Microwave dielectric ceramic Li2Mg2TiO5 low in loss, stable in temperature and low in dielectric constant |
-
2011
- 2011-04-15 CN CN2011100956064A patent/CN102249670A/en active Pending
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102898135A (en) * | 2012-10-12 | 2013-01-30 | 桂林电子科技大学 | High-dielectric constant microwave dielectric ceramic material and preparation method thereof |
CN102887703A (en) * | 2012-10-17 | 2013-01-23 | 桂林理工大学 | Li-base low-temperature-sinterable microwave dielectric ceramic Li2Ba1-xSrxTi6O14 and preparation method thereof |
CN103130496A (en) * | 2013-03-25 | 2013-06-05 | 桂林理工大学 | Low-dielectric-constant microwave dielectric ceramic LiAlSi2O6 and preparation method thereof |
CN103130496B (en) * | 2013-03-25 | 2015-05-20 | 桂林理工大学 | Low-dielectric-constant microwave dielectric ceramic LiAlSi2O6 and preparation method thereof |
CN104671776A (en) * | 2015-02-04 | 2015-06-03 | 桂林理工大学 | Low-loss low-dielectric-constant microwave dielectric ceramic Li2Ba3Ti8O20 and preparation method thereof |
CN104649662A (en) * | 2015-02-25 | 2015-05-27 | 桂林理工大学 | Temperature-stable low-loss microwave dielectric ceramic Li6Ba4Ti18.5O44 and preparation method thereof |
CN104817322A (en) * | 2015-04-20 | 2015-08-05 | 桂林理工大学 | Temperature-stable capacitor ceramic material Sr4EuTiNb9O30 and preparation method thereof |
CN104817323A (en) * | 2015-04-20 | 2015-08-05 | 桂林理工大学 | Temperature-stable ceramic capacitor dielectric material Sr4GdTiNb9O30 and preparation method thereof |
CN104926300A (en) * | 2015-04-20 | 2015-09-23 | 桂林理工大学 | Temperature-stable capacitor Sr4SmTiNb9O30 ceramic and preparation method therefor |
CN104817323B (en) * | 2015-04-20 | 2016-08-17 | 桂林理工大学 | Temperature-stable ceramic capacitor dielectric material Sr4gdTiNb9o30and preparation method thereof |
CN104817322B (en) * | 2015-04-20 | 2016-08-17 | 桂林理工大学 | A kind of temperature-stable capacitor ceramic material Sr4euTiNb9o30and preparation method thereof |
CN105801109A (en) * | 2016-04-01 | 2016-07-27 | 桂林理工大学 | Microwave dielectric ceramic Li2Mg2TiO5 low in loss, stable in temperature and low in dielectric constant |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN103113104B (en) | Application of multiple oxide Li2W4O13 as low temperature sintered microwave dielectric ceramic | |
CN102249670A (en) | Low temperature sintered microwave dielectric ceramic Li2Ba1-xSrxTi4O16 and preparation method thereof | |
CN103496978A (en) | Low-temperature sintering microwave dielectric ceramic Ba2BiV3O11 and preparation method thereof | |
CN103113103B (en) | Low temperature sintered microwave dielectric ceramic BiZn2VO6 and preparation method thereof | |
CN102603292B (en) | Composite oxide used for sintering microwave dielectric ceramics at low temperature | |
CN101538157B (en) | Tantalate microwave dielectric ceramic with high quality factor sintered at low temperature and preparation method thereof | |
CN103553612A (en) | Microwave dielectric ceramic Ba6W2V2O17 capable of being sintered at low temperature and preparation method thereof | |
CN103496979A (en) | Low-temperature sintering microwave dielectric ceramic La3Cu2VO9 and preparation method thereof | |
CN103467095A (en) | Low-temperature sinterable microwave dielectric ceramic SrCuV2O7 and preparation method thereof | |
CN103496981A (en) | Low-temperature sintering temperature-stable microwave dielectric ceramic Bi14W2O27 and preparation method thereof | |
CN103539444B (en) | Low-temperature sintered microwave dielectric ceramic Ca 2bi 2o 5and preparation method thereof | |
CN103539449B (en) | Low temperature sintering microwave dielectric ceramic BiNbW 2o 10and preparation method thereof | |
CN102887703A (en) | Li-base low-temperature-sinterable microwave dielectric ceramic Li2Ba1-xSrxTi6O14 and preparation method thereof | |
CN103319177B (en) | Microwave dielectric ceramic Ba3WTiO8 with low-temperature sintering characteristic and preparation method thereof | |
CN103553613A (en) | Microwave dielectric ceramic BaV2Nb2O11 capable of sintering at low temperature and preparation method thereof | |
CN103524126B (en) | Low-temperature sintering microwave dielectric ceramic CaBi2O4 and preparation method thereof | |
CN103496969A (en) | Low-temperature sintering temperature-stable microwave dielectric ceramic Bi14WO24 and preparation method thereof | |
CN102531568A (en) | Low-temperature sinterable microwave dielectric ceramic LiBa4Bi3O11 and preparation method thereof | |
CN103449814B (en) | Low-temperature-sintering available microwave dielectric ceramic Sr2WCuO6 | |
CN102503375B (en) | Microwave dielectric ceramic LiBa(3-x)SrxSb3Ti5O21 capable of being sintered at low temperature and preparation method thereof | |
CN103496972A (en) | Ultralow sintering temperature stable type microwave dielectric ceramic Ca5Bi14O26 and preparation method thereof | |
CN104003719A (en) | Microwave dielectric ceramic LiTi2V3O12 capable of being sintered at low temperature and preparation method thereof | |
CN103964835B (en) | Low temperature sintering temperature-stable microwave dielectric ceramic LiVP 2o 8and preparation method thereof | |
CN103553614A (en) | Microwave dielectric ceramic La7Nb3Mo4O30 capable of being sintered at low temperature and preparation method thereof | |
CN104003718B (en) | Low temperature sintering microwave dielectric ceramic Li 3ti 2vO 8and preparation method thereof |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20111123 |