CN102249670A - Low temperature sintered microwave dielectric ceramic Li2Ba1-xSrxTi4O16 and preparation method thereof - Google Patents

Low temperature sintered microwave dielectric ceramic Li2Ba1-xSrxTi4O16 and preparation method thereof Download PDF

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CN102249670A
CN102249670A CN2011100956064A CN201110095606A CN102249670A CN 102249670 A CN102249670 A CN 102249670A CN 2011100956064 A CN2011100956064 A CN 2011100956064A CN 201110095606 A CN201110095606 A CN 201110095606A CN 102249670 A CN102249670 A CN 102249670A
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xsrxti4o16
li2ba1
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方亮
苏聪学
廖维
刘勤文
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Guilin University of Technology
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Guilin University of Technology
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Abstract

The invention discloses a low temperature sintered microwave dielectric ceramic Li2Ba1-xSrxTi4O16 and a preparation method thereof. The components of the ceramic are shown in the formula of Li2Ba1-xSrxTi4O16, wherein x is more than or equal to 0 and less than or equal to 1. The preparation method comprises the following steps of: preparing raw materials of BaCO3, SrCO3, Li2CO3 and TiO2 original powder with the purity of over 99.9 percent according to the formula of Li2Ba1-xSrxTi4O16, wherein x is more than or equal to 0 and less than or equal to 1; mixing the prepared raw materials for 12 hours through wet ball-milling, wherein a solvent is distilled water; drying, and pre-sintering at 900DEG C in the air for 6 hours; adding an adhesive into the pre-sintered powder, granulating, and pressing for formation; and sintering at the temperature of between 950 and 1,050DEG C in the air for 4 hours, wherein the adhesive is a 5 mass percent polyvinyl alcohol solution and is 3 percent of the total weight of the pre-sintered powder. The ceramic is well sintered at the temperature of between 950 and 1,050DEG C, has the dielectric constant of 32-40, the quality factor Qf value of 60,000-100,000GHz, small temperature coefficient of resonance frequency, and great application value in industry.

Description

Low sintering microwave dielectric ceramic Li<sub〉2</sub〉Ba<sub〉1-x</sub〉Sr<sub〉x</sub〉Ti<sub〉4</sub〉O<sub〉16</sub〉and preparation method thereof
Technical field
The present invention relates to dielectric ceramic material, particularly relate to microwave devices such as the dielectric resonator that uses in microwave frequency, wave filter, and the dielectric ceramic material of ceramic condenser or thermo-compensation capacitor and preparation method thereof.
Background technology
Microwave dielectric ceramic is meant and is applied in microwave frequency band (mainly being UHF, the SHF frequency range) circuit as dielectric material and finishes the pottery of one or more functions, in modern communication, be widely used as components and parts such as resonator, wave filter, dielectric substrate, medium guided wave loop, it is the key foundation material of modern communication technology, at aspects such as portable mobile phone, automobile telephone, cordless telephone, telestar susceptor, military radars crucial application is arranged, in the miniaturization of modern communication instrument, integrated process, just bringing into play increasing effect.
Be applied to the dielectric ceramic of microwave frequency band, should satisfy the requirement of following dielectric characteristics: the relative permittivity ε that (1) is high rBe beneficial to miniaturization of devices, general requirement ε r〉=20; (2) high quality factor q value or dielectric loss tan δ are to reduce noise, general requirement Qf 〉=3000GHz; (3) the temperature factor τ of resonant frequency fAs far as possible little of guaranteeing that device has good thermostability, general requirement-10/ ℃≤τ f≤+10ppm/ ℃.In the world from late 1930s just the someone attempt dielectric substance is applied to microwave technology.
According to relative permittivity ε rSize with use the different of frequency range, the microwave-medium ceramics that is developed He developing can be divided into 3 classes usually.
(1) low ε rWith the microwave dielectric ceramic of high Q value, mainly be BaO-MgO-Ta 2O 5, BaO-ZnO-Ta 2O 5Or BaO-MgO-Nb 2O 5, BaO-ZnO-Nb 2O 5System or the composite system MWDC material between them.Its ε r=25~30, Q=(1~2) * 10 4(under f 〉=10GHz), τ f≈ 0.Be mainly used in the microwave communication equipments such as direct broadcasting satellite of f 〉=8GHz as the dielectric resonance device.
(2) medium ε rWith the microwave dielectric ceramic of Q value, mainly be with BaTi 4O 9, Ba 2Ti 9O 20(Zr, Sn) TiO 4Deng the MWDC material that is base, its ε r=35-40, Q=(6~9) * 10 3(f=3~-4GHz under), τ f≤ 5ppm/ ℃.Be mainly used in interior microwave military radar of 4~8GHz range of frequency and the communication system as the dielectric resonance device.
(3) high ε rAnd the lower microwave dielectric ceramic of Q value is mainly used in civilian mobile communcations system in 0.8~4GHz range of frequency, and this also is the emphasis of microwave dielectric ceramic research.Since the eighties, physiognomy secondary such as Kolar, Kato are existing and studied perovskite-like tungsten bronze type BaO-Ln 2O 3-TiO 2Series (Ln=La, Sm, Nd, Pr etc., abbreviation BLT system), complex perovskite structure CaO-Li 2O-Ln 2O 3-TiO 2Series, lead base series material, Ca 1-xLn 2x/3TiO 3Be contour ε rMicrowave dielectric ceramic, the wherein BaO-Nd of BLT system 2O 3-TiO 2Material dielectric constant reaches 90, lead base series (Pb, Ca) ZrO 3Specific inductivity reaches 105.
More than the sintering temperature of these material systems generally be higher than 1300 ℃, can not be directly and low melting point metals such as Ag, Cu burn the formation laminated ceramic capacitor altogether.In recent years, along with LTCC Technology (LowTemperature Co-fired Ceramics, the requirement of development LTCC) and the development of microwave multilayer device, domestic and international research personnel have carried out exploring widely and studying to some low fever's system materials, mainly be to adopt devitrified glass or glass-ceramic composite system, because of low melting glass has higher relatively dielectric loss mutually, the existence of glassy phase has improved the dielectric loss of material greatly.Therefore the low fired microwave dielectric ceramic material of the no glassy phase of development is the emphasis of current research.But still more limited for the system that is used for low fever's microwave-medium ceramics, this has limited the development of low temperature co-fired technology and microwave multilayer device to a great extent.
Summary of the invention
The purpose of this invention is to provide a kind of have low-loss and good thermostability, have the high-frequency dielectric constant simultaneously and reach 32~40, the Qf value can be at 950-1050 ℃ of agglomerating composite oxides microwave dielectric ceramic material Li up to 60000~100000GHz 2Ba 1-xSr xTi 4O 16And preparation method thereof.
The chemical constitution general formula of composite oxides microwave dielectric ceramic material of the present invention is: Li 2Ba 1-xSr xTi 4O 16, wherein: 0≤x≤1.
Above-mentioned composite oxides microwave dielectric ceramic material is prepared from as follows:
(1) with purity is BaCO more than 99.9% 3, SrCO 3, Li 2CO 3And TiO 2Starting powder press Li 2Ba 1-xSr xTi 4O 16Form batching, wherein, 0≤x≤1;
(2) step (1) confected materials wet ball-milling was mixed 12 hours, solvent is a distilled water, the pre-burning 6 hours in 900 ℃ of air atmosphere of oven dry back, in preburning powder, add binding agent and granulation then after, compression moulding again, sintering 4h in 950-1050 ℃ of air atmosphere at last.
Described binding agent employing mass concentration is 5% polyvinyl alcohol solution, and dosage accounts for 3% of preburning powder total amount.
Microwave dielectric ceramic material of the present invention is good at 950-1050 ℃ of sintering, and its specific inductivity reaches 32~40, and quality factor q f value is up to 60000~100000GHz, and temperature coefficient of resonance frequency is little, industrial great using value is arranged.
Embodiment
Embodiment:
Table 1 shows several specific embodiments and the microwave dielectric property thereof that constitutes each component content of the present invention.Its preparation method carries out the evaluation of microwave dielectric property as mentioned above with the cylindrical dielectric resonator method.
Table 1:
Figure BSA00000474908200031
This pottery can be widely used in the manufacturing that various dielectric resonances play microwave devices such as device, wave filter, can satisfy the Technology Need of systems such as mobile communication, satellite communications.
With the element such as the Ca of Ba, Sr analog structure and chemical property, Pb etc., also can make dielectric ceramic with analogous crystalline structure of the present invention and performance.

Claims (2)

1. composite oxides is characterized in that the chemical constitution general formula of described composite oxides is: Li as the application of microwave dielectric ceramic 2Ba 1-xSr xTi 4O 16, wherein≤x≤1.
2. the preparation method of composite oxides according to claim 1 is characterized in that concrete steps are:
(1) with purity is BaCO more than 99.9% 3, SrCO 3, Li 2CO 3And TiO 2Starting powder press Li 2Ba 1-xSr xTi 4O 16Form batching, wherein, 0≤x≤1;
(2) step (1) confected materials wet ball-milling was mixed 12 hours, solvent is a distilled water, the pre-burning 6 hours in 900 ℃ of air atmosphere of oven dry back, in preburning powder, add binding agent and granulation then after, compression moulding again, sintering 4h in 950-1050 ℃ of air atmosphere at last;
Described binding agent employing mass concentration is 5% polyvinyl alcohol solution, and dosage accounts for 3% of preburning powder total amount.
CN2011100956064A 2011-04-15 2011-04-15 Low temperature sintered microwave dielectric ceramic Li2Ba1-xSrxTi4O16 and preparation method thereof Pending CN102249670A (en)

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Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102887703A (en) * 2012-10-17 2013-01-23 桂林理工大学 Li-base low-temperature-sinterable microwave dielectric ceramic Li2Ba1-xSrxTi6O14 and preparation method thereof
CN102898135A (en) * 2012-10-12 2013-01-30 桂林电子科技大学 High-dielectric constant microwave dielectric ceramic material and preparation method thereof
CN103130496A (en) * 2013-03-25 2013-06-05 桂林理工大学 Low-dielectric-constant microwave dielectric ceramic LiAlSi2O6 and preparation method thereof
CN104649662A (en) * 2015-02-25 2015-05-27 桂林理工大学 Temperature-stable low-loss microwave dielectric ceramic Li6Ba4Ti18.5O44 and preparation method thereof
CN104671776A (en) * 2015-02-04 2015-06-03 桂林理工大学 Low-loss low-dielectric-constant microwave dielectric ceramic Li2Ba3Ti8O20 and preparation method thereof
CN104817322A (en) * 2015-04-20 2015-08-05 桂林理工大学 Temperature-stable capacitor ceramic material Sr4EuTiNb9O30 and preparation method thereof
CN104817323A (en) * 2015-04-20 2015-08-05 桂林理工大学 Temperature-stable ceramic capacitor dielectric material Sr4GdTiNb9O30 and preparation method thereof
CN104926300A (en) * 2015-04-20 2015-09-23 桂林理工大学 Temperature-stable capacitor Sr4SmTiNb9O30 ceramic and preparation method therefor
CN105801109A (en) * 2016-04-01 2016-07-27 桂林理工大学 Microwave dielectric ceramic Li2Mg2TiO5 low in loss, stable in temperature and low in dielectric constant

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102898135A (en) * 2012-10-12 2013-01-30 桂林电子科技大学 High-dielectric constant microwave dielectric ceramic material and preparation method thereof
CN102887703A (en) * 2012-10-17 2013-01-23 桂林理工大学 Li-base low-temperature-sinterable microwave dielectric ceramic Li2Ba1-xSrxTi6O14 and preparation method thereof
CN103130496A (en) * 2013-03-25 2013-06-05 桂林理工大学 Low-dielectric-constant microwave dielectric ceramic LiAlSi2O6 and preparation method thereof
CN103130496B (en) * 2013-03-25 2015-05-20 桂林理工大学 Low-dielectric-constant microwave dielectric ceramic LiAlSi2O6 and preparation method thereof
CN104671776A (en) * 2015-02-04 2015-06-03 桂林理工大学 Low-loss low-dielectric-constant microwave dielectric ceramic Li2Ba3Ti8O20 and preparation method thereof
CN104649662A (en) * 2015-02-25 2015-05-27 桂林理工大学 Temperature-stable low-loss microwave dielectric ceramic Li6Ba4Ti18.5O44 and preparation method thereof
CN104817322A (en) * 2015-04-20 2015-08-05 桂林理工大学 Temperature-stable capacitor ceramic material Sr4EuTiNb9O30 and preparation method thereof
CN104817323A (en) * 2015-04-20 2015-08-05 桂林理工大学 Temperature-stable ceramic capacitor dielectric material Sr4GdTiNb9O30 and preparation method thereof
CN104926300A (en) * 2015-04-20 2015-09-23 桂林理工大学 Temperature-stable capacitor Sr4SmTiNb9O30 ceramic and preparation method therefor
CN104817323B (en) * 2015-04-20 2016-08-17 桂林理工大学 Temperature-stable ceramic capacitor dielectric material Sr4gdTiNb9o30and preparation method thereof
CN104817322B (en) * 2015-04-20 2016-08-17 桂林理工大学 A kind of temperature-stable capacitor ceramic material Sr4euTiNb9o30and preparation method thereof
CN105801109A (en) * 2016-04-01 2016-07-27 桂林理工大学 Microwave dielectric ceramic Li2Mg2TiO5 low in loss, stable in temperature and low in dielectric constant

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Application publication date: 20111123