CN103232243A - Vanadate microwave dielectric ceramic Ca1. 5M3V3O12 and preparation method thereof - Google Patents

Vanadate microwave dielectric ceramic Ca1. 5M3V3O12 and preparation method thereof Download PDF

Info

Publication number
CN103232243A
CN103232243A CN2013101770983A CN201310177098A CN103232243A CN 103232243 A CN103232243 A CN 103232243A CN 2013101770983 A CN2013101770983 A CN 2013101770983A CN 201310177098 A CN201310177098 A CN 201310177098A CN 103232243 A CN103232243 A CN 103232243A
Authority
CN
China
Prior art keywords
hours
vanadate
dielectric ceramic
binding agent
preparation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN2013101770983A
Other languages
Chinese (zh)
Inventor
方亮
韦珍海
唐莹
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Guilin University of Technology
Original Assignee
Guilin University of Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Guilin University of Technology filed Critical Guilin University of Technology
Priority to CN2013101770983A priority Critical patent/CN103232243A/en
Publication of CN103232243A publication Critical patent/CN103232243A/en
Pending legal-status Critical Current

Links

Landscapes

  • Inorganic Insulating Materials (AREA)
  • Compositions Of Oxide Ceramics (AREA)

Abstract

The invention discloses a vanadate microwave dielectric ceramic Ca1.5M3V3O12 and a preparation method thereof. The composition og the vanadate microwave dielectric ceramic material is Ca0.5M3V3O12, wherein M is one of Zn and Mg. The preparation method comprises the following steps of: (1). weighting and batching the original powder of CaCO3, MO and VO3 with the purity of more than 99.9% according to the Ca0.5M3V3O12 chemical formula, wherein M is one of Zn and Mg; (2) carrying out wet ball milling on the raw material and mixing for 12 hours, drying, and presintering for 6 hours at 800 DEG C atmosphere, wherein the distilled water is used as a solvent; and (3) adding a binding agent to the prepared powder, prilling, then carrying out compression molding, and sintering for 4 hours at 875-925 DEG C atmosphere, wherein a 5% polyvinyl alcohol solution is used as the binding agent, and the dosage of the binding agent accounts for 3% of the total amount of the powder. The ceramic prepared by the method has good sintering performance at 875-925 DEG C, dielectric constant of 11-12, quality factor (QF) value of 61000-88000 GHz, small temperature coefficient of resonance frequency and enormous application value in industries.

Description

Vanadate microwave dielectric ceramic Ca 1.5m 3v 3o 12and preparation method thereof
Technical field
The present invention relates to dielectric ceramic material, particularly relate to microwave dielectric ceramic material of the microwave devices such as medium substrate, resonator and wave filter that use in microwave frequency and preparation method thereof.
Background technology
Microwave dielectric ceramic refers to and is applied in microwave frequency band (being mainly UHF, SHF frequency range) circuit as dielectric material and completes the pottery of one or more functions, be widely used as the components and parts such as resonator, wave filter, dielectric substrate and medium guided wave loop in modern communication, it is the key foundation material of modern communication technology, at aspects such as portable mobile phone, automobile telephone, cordless telephone, telestar susceptor and military radars, very important application is arranged, in the miniaturization of modern communication instrument, integrated process, just bringing into play increasing effect.
Be applied to the dielectric ceramic of microwave frequency band, should meet the requirement of following dielectric characteristics: (1) seriation DIELECTRIC CONSTANT ε rto adapt to the requirement of different frequency and different application occasion; (2) high quality factor q value or dielectric loss tan δ are to reduce noise, general requirement Qf>=3000 GHz; (3) the temperature factor τ of resonant frequency ?the as far as possible little thermostability to guarantee that device has had, general requirement-10/ ℃≤τ ?≤+10 ppm/ ℃.From late 1930s, just someone attempts dielectric substance is applied to microwave technology in the world.
According to relative permittivity ε rsize from use the different of frequency range, usually the microwave-medium ceramics be developed He developing can be divided into to 4 classes.
(1) ultralow dielectric microwave dielectric ceramic, main representative is Al 2o 3-TiO 2, Y 2baCuO 5, MgAl 2o 4and Mg 2siO 4deng, its ε r≤ 20, quality factor q * f>=50000GHz, τ ?≤ 10 ppm/ ° C.Be mainly used in microwave base plate and high-end microwave device.
(2) low ε rwith the microwave dielectric ceramic of high Q value, be mainly BaO-MgO-Ta 2o 5, BaO-ZnO-Ta 2o 5or BaO-MgO-Nb 2o 5, BaO-ZnO-Nb 2o 5system or the composite system MWDC material between them.Its ε r=25~30, Q=(1~2) * 10 4(under f>=10 GHz), τ ?≈ 0.Be mainly used in the microwave communication equipments such as direct broadcasting satellite of f >=8 GHz as the dielectric resonance device.
(3) medium ε rwith the microwave dielectric ceramic of Q value, be mainly with BaTi 4o 9, Ba 2ti 9o 20(Zr or Sn) TiO 4deng the MWDC material that is base, its ε r=35 ~ 40, Q=(6~9) * 10 3(f=3~-4GHz under), τ ?≤ 5 ppm/ ° C.Be mainly used in the interior microwave military radar of 4~8 GHz range of frequency and communication system as the dielectric resonance device.
(4) high ε rand the lower microwave dielectric ceramic of Q value is mainly used in civilian mobile communcations system in 0.8~4GHz range of frequency, this is also the emphasis of microwave dielectric ceramic research.Since the eighties, the people such as Kolar, Kato find and have studied perovskite-like tungsten bronze type BaO-Ln in succession 2o 3-TiO 2series (Ln=La, Sm, Nd or Pr etc. are called for short BLT system), complex perovskite structure CaO-Li 2o-Ln 2o 3-TiO 2series, lead base series material, Ca 1-xln 2x/3tiO 3be contour ε rmicrowave dielectric ceramic, the wherein BaO-Nd of BLT system 2o 3-TiO 2material dielectric constant reaches 90, lead base series (Pb, Ca) ZrO 3specific inductivity reaches 105.
The sintering temperature of above these material systems is generally higher than 1300 ° of C, can not be directly and the low melting point metals such as Ag and Cu burn altogether the formation laminated ceramic capacitor.In recent years, along with LTCC Technology (Low Temperature Co-fired Ceramics, the requirement of development LTCC) and the development of microwave multilayer device, researchist both domestic and external has carried out exploring widely and studying to some low fever's system materials, mainly to adopt devitrified glass or glass-ceramic composite system, because low melting glass has relatively high dielectric loss mutually, the existence of glassy phase has improved the dielectric loss of material greatly.Therefore development is the emphasis of current research without the low fired microwave dielectric ceramic material of glassy phase.
In exploration and development of new can be hanged down the process of fired microwave dielectric ceramic materials, the material systems such as the Li based compound that intrinsic sintering temperature is low, Bi based compound, tungstate architecture compound and tellurate architecture compound get the attention and study, wherein a large amount of exploratory developments concentrates on Li base binary or ternary compound, and has developed as Li 2tiO 3, Li 3nbO 4, Li 2moO 4and Li 2mTi 3o 8serial well behaved microwave-medium ceramics such as (M=Mg or Zn) etc., but but low fever's microwave-medium ceramics system is still more limited, and this has limited the development of low temperature co-fired technology and microwave multilayer device to a great extent.Recently both at home and abroad the investigator to some vanadate as Mg 3(VO 4) 2, Mg 2v 2o 7and A 2v 2o 7(A=Ba, Sr or Ca) pottery microwave dielectric property report, we [see document Liang Fang, Congxue Su, Huanfu Zhou, Zhenhai Wei, Hui Zhang, Novel Low-Firing Microwave Dielectric Ceramic LiCa 3mgV 3o 12with Low Dielectric Loss, Journal of the American Ceramic Society, 2013,96 (3): 688-690] to consisting of LiCa 3mgV 3o 12cube garnet structure carried out sintering characteristic and Study on microwave dielectric property containing lithium vanadate pottery, found that such ceramic sintering temperature is 900 °c and can be low temperature co-fired with silver electrode, its specific inductivity is that 10.5, Qf value reaches 74 700GHZ, but the temperature factor τ of resonant frequency ?(47 ppm/ ℃) bigger than normal and can't meet practical requirement.But be to explore the good Temperature Firing Microwave Dielectric Ceramics of temperature stability, we are the ashlar garnet structure vanadate Ca that opposes 1.5m 3v 3o 12(M=Mg or Zn) pottery has carried out preparation and Study on microwave dielectric property, finds the temperature factor τ of the resonant frequency that such is ceramic ?approach zero, and comprehensive microwave dielectric property is good, and can be low temperature co-fired with silver electrode, can be widely used in the manufacture of the microwave devices such as various resonators and wave filter, can meet the needs of low temperature co-fired technology and microwave multilayer device.
Summary of the invention
The purpose of this invention is to provide a kind of have low-loss and good thermostability, vanadate microwave dielectric ceramic material that sintering temperature is low simultaneously and preparation method thereof.
The chemical constitution of vanadate microwave dielectric ceramic material of the present invention is: Ca 1.5m 3v 3o 12, wherein M is a kind of in Zn and Mg.
Preparation method's concrete steps of described vanadate pottery are:
(1) by purity, be the CaCO more than 99.9% 3, MO and VO 3starting powder press Ca 1.5m 3v 3o 12the chemical formula weigh batching, wherein M is a kind of in Zn and Mg.
(2) step (1) raw material wet ball-milling is mixed 12 hours, solvent is distilled water, pre-burning 6 hours in 800 ℃ of air atmosphere after oven dry.
(3) after adding binding agent granulation in the powder made in step (2), then compression moulding, last sintering 4 hours in 875 ~ 925 ℃ of air atmosphere; Described binding agent adopts the polyvinyl alcohol solution that mass concentration is 5%, and dosage accounts for 3% of powder total amount.
Pottery prepared by the present invention is good at 875-925 ℃ of sintering, and its specific inductivity reaches 11~12, and quality factor q f value is up to 61000-88000GHz, and temperature coefficient of resonance frequency is little, industrial great using value is arranged.
Embodiment
Embodiment:
Table 1 shows and forms different 6 specific embodiments and the microwave dielectric property thereof formed with sintering temperature of the present invention.Its preparation method as mentioned above, carries out the evaluation of microwave dielectric property by the cylindrical dielectric resonator method.
The present invention never is limited to above embodiment.The bound of sintering temperature, interval value can realize the present invention, at this, do not enumerate embodiment.
This pottery can be widely used in the manufacture of the microwave devices such as various medium substrates, resonator and wave filter, can meet the Technology Need of the systems such as mobile communication, satellite communications.
Table 1:
Figure 281231DEST_PATH_IMAGE001

Claims (1)

1. but a vanadate, as the application of low-temperature sintered microwave dielectric ceramic, is characterized in that the chemical constitution general formula of described vanadate is: Ca 1.5m 3v 3o 12, wherein M is a kind of in Zn and Mg;
Preparation method's concrete steps of described vanadate are:
(1) by purity, be the CaCO more than 99.9% 3, MO and VO 3starting powder press Ca 1.5m 3v 3o 12the chemical formula weigh batching, wherein M is a kind of in Zn and Mg;
(2) step (1) raw material wet ball-milling is mixed 12 hours, solvent is distilled water, pre-burning 6 hours in 800 ℃ of air atmosphere after oven dry;
(3) after adding binding agent granulation in the powder made in step (2), then compression moulding, last sintering 4 hours in 875 ~ 925 ℃ of air atmosphere; Described binding agent adopts the polyvinyl alcohol solution that mass concentration is 5%, and dosage accounts for 3% of powder total amount.
CN2013101770983A 2013-05-14 2013-05-14 Vanadate microwave dielectric ceramic Ca1. 5M3V3O12 and preparation method thereof Pending CN103232243A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN2013101770983A CN103232243A (en) 2013-05-14 2013-05-14 Vanadate microwave dielectric ceramic Ca1. 5M3V3O12 and preparation method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN2013101770983A CN103232243A (en) 2013-05-14 2013-05-14 Vanadate microwave dielectric ceramic Ca1. 5M3V3O12 and preparation method thereof

Publications (1)

Publication Number Publication Date
CN103232243A true CN103232243A (en) 2013-08-07

Family

ID=48880328

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2013101770983A Pending CN103232243A (en) 2013-05-14 2013-05-14 Vanadate microwave dielectric ceramic Ca1. 5M3V3O12 and preparation method thereof

Country Status (1)

Country Link
CN (1) CN103232243A (en)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103496979A (en) * 2013-09-23 2014-01-08 桂林理工大学 Low-temperature sintering microwave dielectric ceramic La3Cu2VO9 and preparation method thereof
CN103496964A (en) * 2013-09-23 2014-01-08 桂林理工大学 Low-temperature sintering microwave dielectric ceramic Ca3Bi(PO4)3 and preparation method thereof
CN104311025A (en) * 2014-10-21 2015-01-28 桂林理工大学 Microwave dielectric ceramic MgSi4V6O24 with ultralow dielectric constant and preparation method thereof
CN104402438A (en) * 2014-11-21 2015-03-11 桂林理工大学 Temperature-stable and ultralow-dielectric constant microwave dielectric ceramic Ca2LaBO5
CN104446374A (en) * 2014-11-15 2015-03-25 桂林理工大学 Temperature-stable type ultralow-dielectric-constant microwave dielectric ceramic Ca5LaB3O11
CN105439543A (en) * 2015-12-19 2016-03-30 桂林理工大学 Temperature stable type microwave dielectric ceramic Ca2CuGe3O9 with low dielectric constant and preparation method thereof
CN105461287A (en) * 2015-12-23 2016-04-06 桂林理工大学 Low temperature sinterable temperature-stable microwave dielectric ceramic BaCu3Ge4O12 and preparation method thereof
CN105461286A (en) * 2015-12-23 2016-04-06 桂林理工大学 Temperature stabilization microwave dielectric ceramics Ca3CuGe4O12 and preparation method thereof
CN110395984A (en) * 2019-08-01 2019-11-01 电子科技大学 A kind of low temperature sintering microwave ceramic material and preparation method thereof
CN111362697A (en) * 2020-03-18 2020-07-03 湖南大学 Novel microwave dielectric ceramic capable of being sintered at low temperature and preparation method thereof

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102660274A (en) * 2012-05-04 2012-09-12 苏州大学 Vanadate single-matrix yellow fluorescent powder and preparation method thereof
CN102875148A (en) * 2012-10-17 2013-01-16 桂林理工大学 Microwave dielectric ceramic LiCa3(Mg1-xZnx)V3O12 capable of being sintered at low temperature and preparation method

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102660274A (en) * 2012-05-04 2012-09-12 苏州大学 Vanadate single-matrix yellow fluorescent powder and preparation method thereof
CN102875148A (en) * 2012-10-17 2013-01-16 桂林理工大学 Microwave dielectric ceramic LiCa3(Mg1-xZnx)V3O12 capable of being sintered at low temperature and preparation method

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103496979A (en) * 2013-09-23 2014-01-08 桂林理工大学 Low-temperature sintering microwave dielectric ceramic La3Cu2VO9 and preparation method thereof
CN103496964A (en) * 2013-09-23 2014-01-08 桂林理工大学 Low-temperature sintering microwave dielectric ceramic Ca3Bi(PO4)3 and preparation method thereof
CN104311025A (en) * 2014-10-21 2015-01-28 桂林理工大学 Microwave dielectric ceramic MgSi4V6O24 with ultralow dielectric constant and preparation method thereof
CN104446374A (en) * 2014-11-15 2015-03-25 桂林理工大学 Temperature-stable type ultralow-dielectric-constant microwave dielectric ceramic Ca5LaB3O11
CN104402438A (en) * 2014-11-21 2015-03-11 桂林理工大学 Temperature-stable and ultralow-dielectric constant microwave dielectric ceramic Ca2LaBO5
CN105439543A (en) * 2015-12-19 2016-03-30 桂林理工大学 Temperature stable type microwave dielectric ceramic Ca2CuGe3O9 with low dielectric constant and preparation method thereof
CN105461287A (en) * 2015-12-23 2016-04-06 桂林理工大学 Low temperature sinterable temperature-stable microwave dielectric ceramic BaCu3Ge4O12 and preparation method thereof
CN105461286A (en) * 2015-12-23 2016-04-06 桂林理工大学 Temperature stabilization microwave dielectric ceramics Ca3CuGe4O12 and preparation method thereof
CN110395984A (en) * 2019-08-01 2019-11-01 电子科技大学 A kind of low temperature sintering microwave ceramic material and preparation method thereof
CN111362697A (en) * 2020-03-18 2020-07-03 湖南大学 Novel microwave dielectric ceramic capable of being sintered at low temperature and preparation method thereof

Similar Documents

Publication Publication Date Title
CN103130496B (en) Low-dielectric-constant microwave dielectric ceramic LiAlSi2O6 and preparation method thereof
CN103145420B (en) Vanadate microwave dielectric ceramic LiMVO4 capable of being sintered at low temperature and preparation method thereof
CN103145419B (en) Microwave dielectric ceramic Li3VO4 capable of being sintered at low temperature and preparation method thereof
CN104003720B (en) Can low-temperature sintered microwave dielectric ceramic Li 2zn 2w 2o 9and preparation method thereof
CN103113104B (en) Application of multiple oxide Li2W4O13 as low temperature sintered microwave dielectric ceramic
CN103204680B (en) Niobate microwave dielectric ceramic LiMNb3O9 and preparation method thereof
CN103232243A (en) Vanadate microwave dielectric ceramic Ca1. 5M3V3O12 and preparation method thereof
CN104058748A (en) Microwave dielectric ceramic LiMg2V3O10 allowing low-temperature sintering and preparation method thereof
CN103121843A (en) Microwave dielectric ceramic Li2Mg2W3O12 capable of being sintered at low temperature and preparation method thereof
CN104058746B (en) Microwave dielectric ceramic LiNd2V3O11 allowing low-temperature sintering and preparation method thereof
CN104058745A (en) Low-temperature-sintering microwave dielectric ceramic Li2MgNb2O7 and preparation method thereof
CN103159477A (en) Low-temperature sintered tungstate microwave dielectric ceramic Li2MW2O8 and preparation method thereof
CN103496973A (en) Low temperature sintered microwave dielectric ceramic BiTiNbO6 and preparation method thereof
CN103570345A (en) Low-temperature sintering microwave dielectric ceramic Bi12MgO19 and preparation method thereof
CN103553612A (en) Microwave dielectric ceramic Ba6W2V2O17 capable of being sintered at low temperature and preparation method thereof
CN103467095A (en) Low-temperature sinterable microwave dielectric ceramic SrCuV2O7 and preparation method thereof
CN103496979A (en) Low-temperature sintering microwave dielectric ceramic La3Cu2VO9 and preparation method thereof
CN104058747B (en) Can low-temperature sintered microwave dielectric ceramic LiMgV 3o 9and preparation method thereof
CN104045344B (en) Can low-temperature sintered microwave dielectric ceramic Li 2zn 3wO 7and preparation method thereof
CN103159476A (en) Microwave dielectric ceramic LiWVO6 capable of being subjected to low-temperature sintering and preparation method thereof
CN103193483B (en) Low-temperature sintering tungstate microwave dielectric ceramic Li3R3W2O12 and preparation method thereof
CN103232244A (en) Low temperature sinterable vanadate microwave dielectric ceramic Ca0.5M4V3O12 and preparation method thereof
CN103539449A (en) Microwave dielectric ceramic BiNbW2O10 capable of being sintered at low temperature and preparation method thereof
CN103319177A (en) Microwave dielectric ceramic Ba3WTiO8 with low-temperature sintering characteristic and preparation method thereof
CN103922719B (en) Low temperature sintering ultralow dielectric microwave dielectric ceramic TiP 2o 7and preparation method thereof

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20130807