CN100383920C - Chip stage silicon perforating radiating method and structure thereof - Google Patents
Chip stage silicon perforating radiating method and structure thereof Download PDFInfo
- Publication number
- CN100383920C CN100383920C CNB2006100406985A CN200610040698A CN100383920C CN 100383920 C CN100383920 C CN 100383920C CN B2006100406985 A CNB2006100406985 A CN B2006100406985A CN 200610040698 A CN200610040698 A CN 200610040698A CN 100383920 C CN100383920 C CN 100383920C
- Authority
- CN
- China
- Prior art keywords
- chip
- chips
- silicon
- heat
- perforating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/1015—Shape
- H01L2924/10155—Shape being other than a cuboid
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/1015—Shape
- H01L2924/10155—Shape being other than a cuboid
- H01L2924/10158—Shape being other than a cuboid at the passive surface
Abstract
The present invention relates to a chip stage silicon perforating radiating method and a structure thereof, which is suitable for radiation of high integrity integrated circuit chips and chips of relevant power discrete devices. The chip stage silicon perforating radiating method comprises the processing steps: firstly, blind holes are perforated in chip silicon materials to a metal region of welding pads at the back surface of a reverse bare chip by laser drilling and etching methods; secondly, the manufacture of metal films is carried out at the silicon perforating position of and the back surface of the chips, and the perforating area and the back surface of the chips form a metal film layer; thirdly, the perforating area and the back surface of the chips are processed through plating, and a heat conducting metal layer is formed at the perforating area and the back surface of the chips. The traditional method of indirect heat emission is changed by the present invention into reverse packaging technology, the bare chip is filled with metals, or heat conducting adhesives, etc. after the bare chip is processed through the silicon perforation, and the heat of the chips is directly radiated. The chip stage silicon perforating radiating method has the advantages of fast radiation of the chips, stable performance of the chips and long service life.
Description
Technical field:
The present invention relates to a kind of integrated circuit or discrete device chip.Particularly relate to a kind of chip stage silicon perforating radiating method and structure thereof.Be applicable to the heat radiation of high integration integrated circuit (IC) chip and related power discrete device chip.Belong to technical field of semiconductors.
Background technology:
Before the present invention made, at present the radiator structure of high integration integrated circuit (IC) chip and related power discrete device chip was to adopt after the conventional package technology in chip exterior finned or heat-conducting glue mode, and chip is dispelled the heat indirectly.This indirect radiating mode chip heat is distributed slowly, and this will directly influence the serviceability and the life-span of chip.
Summary of the invention:
The objective of the invention is to overcome above-mentioned deficiency, fast chip stage silicon perforating radiating method of a kind of chip cooling and structure thereof are provided.
The object of the present invention is achieved like this: a kind of chip stage silicon perforating radiating method, and this method comprises following processing step:
Step 1, adopt laser drilling and etching method that the chip silicon materials are worn blind hole in the upside-down mounting bare chip back side, wherein this blind hole is positioned at described chip pad metal area top,
Step 2, carry out metal film with regard to silicon site of perforation and chip back and make, make punch block and chip back form metallic diaphragm,
Step 3, carry out electroplating technology, make punch block and chip back form heat-conducting metal layer with regard to punch block and chip back.
The said chip stage silicon perforating radiating method also can be made single or multiple lift metal level or heat conduction glue-line again outside heat-conducting metal layer.
Chip stage silicon perforating radiating structure of the present invention comprises the upside-down mounting bare chip, it is characterized in that:
A, in the upside-down mounting bare chip back side chip silicon materials are worn blind hole, wherein this blind hole is positioned at described chip pad metal area top,
B, blind hole surface and chip back are covered with metallic diaphragm,
C, the upside-down mounting bare chip back side that is covered with metallic diaphragm have heat-conducting metal layer again, and this heat-conducting metal layer is fills up in the blind hole.
Said chip stage silicon perforating radiating structure also can be covered with the metal level or the heat conduction glue-line of single or multiple lift outside heat-conducting metal layer.
The present invention changes tradition radiating mode indirectly, with flip-chip packaged technology, makes bare chip added metal or heat-conducting glue etc. after the silicon perforation, and chip is directly dispelled the heat.This direct radiating mode chip heat is distributed soon, and chip performance is stable, long service life.
Fig. 1 is a chip stage silicon perforating radiating structural representation of the present invention.
Embodiment:
Referring to Fig. 1, chip stage silicon perforating radiating method comprises following processing step:
Step 1, adopt laser drilling and etching method that the chip silicon materials are worn blind hole 5 in upside-down mounting bare chip 1 back side, wherein this blind hole 5 is positioned at described chip pad metal area top,
Step 2, carry out metal film with regard to silicon site of perforation and chip back and make, make punch block and chip back form metallic diaphragm 2,
Step 3, carry out electroplating technology, make punch block and chip back form heat-conducting metal layer 3 with regard to punch block and chip back.
Step 4, outside heat-conducting metal layer, make single or multiple lift metal level or heat conduction glue-line 4.
Claims (4)
1. chip stage silicon perforating radiating method, it is characterized in that: this method comprises following processing step:
Step 1, adopt laser drilling and etching method that the chip silicon materials are worn blind hole in the upside-down mounting bare chip back side, wherein this blind hole is positioned at described chip pad metal area top,
Step 2, carry out metal film with regard to silicon site of perforation and chip back and make, make punch block and chip back form metallic diaphragm,
Step 3, carry out electroplating technology, make punch block and chip back form heat-conducting metal layer with regard to punch block and chip back.
2. a kind of chip stage silicon perforating radiating method according to claim 1 is characterized in that: this method also comprises following processing step:
Step 4, outside heat-conducting metal layer, make single or multiple lift metal level or heat conduction glue-line.
3. a chip stage silicon perforating radiating structure comprises upside-down mounting bare chip (1), it is characterized in that:
A, in upside-down mounting bare chip (1) back side chip silicon materials are worn blind hole (5), wherein this blind hole (5) is positioned at described chip pad metal area top,
B, blind hole (5) surface and chip back are covered with metal film (2) layer,
C, upside-down mounting bare chip (1) back side that is covered with metal film (2) layer are covered with heat-conducting metal layer (3), and this heat-conducting metal layer (3) is fills up in the blind hole (5).
4. a kind of chip stage silicon perforating radiating structure according to claim 3 is characterized in that: outer metal level or the heat conduction glue-line (4) that is covered with single or multiple lift of described heat-conducting metal layer (3).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006100406985A CN100383920C (en) | 2006-05-26 | 2006-05-26 | Chip stage silicon perforating radiating method and structure thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006100406985A CN100383920C (en) | 2006-05-26 | 2006-05-26 | Chip stage silicon perforating radiating method and structure thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1862765A CN1862765A (en) | 2006-11-15 |
| CN100383920C true CN100383920C (en) | 2008-04-23 |
Family
ID=37390148
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2006100406985A Active CN100383920C (en) | 2006-05-26 | 2006-05-26 | Chip stage silicon perforating radiating method and structure thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100383920C (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102447215A (en) * | 2010-10-08 | 2012-05-09 | 华信光电科技股份有限公司 | Conduction cooling packaging laser and packaging method thereof |
| CN105590906B (en) * | 2016-01-11 | 2019-02-01 | 江苏科技大学 | It is a kind of for being fanned out to the radiating component and manufacturing method of formula wafer level packaging |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1304175A (en) * | 2000-01-13 | 2001-07-18 | 三菱电机株式会社 | Semiconductor device |
| CN1348205A (en) * | 2000-10-02 | 2002-05-08 | 三洋电机株式会社 | Method for producing electric circuit device |
| US6639324B1 (en) * | 2002-07-09 | 2003-10-28 | Via Technologies, Inc. | Flip chip package module and method of forming the same |
| US6773952B2 (en) * | 2000-09-12 | 2004-08-10 | International Business Machines Corporation | Semiconductor chip structures with embedded thermal conductors and a thermal sink disposed over opposing substrate surfaces |
| CN1738031A (en) * | 2004-08-19 | 2006-02-22 | 富士通株式会社 | Heat transfer plate, heat transfer tectosome and manufacture method thereof |
-
2006
- 2006-05-26 CN CNB2006100406985A patent/CN100383920C/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1304175A (en) * | 2000-01-13 | 2001-07-18 | 三菱电机株式会社 | Semiconductor device |
| US6773952B2 (en) * | 2000-09-12 | 2004-08-10 | International Business Machines Corporation | Semiconductor chip structures with embedded thermal conductors and a thermal sink disposed over opposing substrate surfaces |
| CN1348205A (en) * | 2000-10-02 | 2002-05-08 | 三洋电机株式会社 | Method for producing electric circuit device |
| US6639324B1 (en) * | 2002-07-09 | 2003-10-28 | Via Technologies, Inc. | Flip chip package module and method of forming the same |
| CN1738031A (en) * | 2004-08-19 | 2006-02-22 | 富士通株式会社 | Heat transfer plate, heat transfer tectosome and manufacture method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1862765A (en) | 2006-11-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP3051584B1 (en) | Heat spreader with down set leg attachment feature | |
| JP2006339224A (en) | Substrate for led and led package | |
| KR101032961B1 (en) | Manufacture method of LED heat dissipation board and its structure | |
| TW201232854A (en) | Substrate structure of LED packaging and manufacturing method of the same | |
| US20090027857A1 (en) | Heat spreader constructions, intergrated circuitry, methods of forming heat spreader constructions, and methods of forming integrated circuitry | |
| CN101109501A (en) | Cooling device for light emitting diode (led) module and method for fabricating the same | |
| TW200807652A (en) | Thermal isolation of electronic devices in submount used for LEDs lighting applications | |
| WO2012061184A1 (en) | Flexible led device and method of making | |
| TW200915498A (en) | Thermally enhanced thin semiconductor package | |
| TW201605005A (en) | Chip level heat dissipation using silicon | |
| US20080079125A1 (en) | Microelectronic die assembly having thermally conductive element at a backside thereof and method of making same | |
| JP2008311294A (en) | Method of manufacturing substrate for power module | |
| CN100383920C (en) | Chip stage silicon perforating radiating method and structure thereof | |
| JP5056186B2 (en) | Power module substrate manufacturing method | |
| US7468554B2 (en) | Heat sink board and manufacturing method thereof | |
| JP4311303B2 (en) | Power module substrate manufacturing method | |
| JP2007194256A (en) | Producing process of substrate for power module | |
| JP2011199261A (en) | Electronic component | |
| JP2011096830A (en) | Semiconductor device | |
| CN2909521Y (en) | Chip level silicon punching heat sink structure | |
| JP6020496B2 (en) | Junction structure and manufacturing method thereof | |
| JP2004336046A (en) | Application specific heat sink element | |
| EP1729342A1 (en) | Heat sink board and manufacturing method thereof | |
| CN102254877B (en) | Power module without metal baseplate | |
| CN202363444U (en) | Metal-free base plate power module |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |