CN100382205C - Preparation and application of high-potential gradient zinc oxide piezoresistor material - Google Patents
Preparation and application of high-potential gradient zinc oxide piezoresistor material Download PDFInfo
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- CN100382205C CN100382205C CNB2005100253985A CN200510025398A CN100382205C CN 100382205 C CN100382205 C CN 100382205C CN B2005100253985 A CNB2005100253985 A CN B2005100253985A CN 200510025398 A CN200510025398 A CN 200510025398A CN 100382205 C CN100382205 C CN 100382205C
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Abstract
The present invention relates to the preparation and the application of a high-potential gradient zinc oxide piezoresistive material, which belongs to the technical field of the manufacture and the application of a piezoresistive material. The preparation of the material is that raw materials are mixed according to the mole ratio that ZnO: Bi2O3: Sb2O3: Cr2O3: CO2O3: MnO2 is 96.5: 0.7: 1.0: 0.5: 0.8: 0.5, and a product, the high-potential gradient zinc oxide piezoresistive material, is obtained through three steps of first high-energy fine grinding, low-temperature sintering and second high-energy fine grinding. The application of the material is the preparation of a high-potential gradient zinc oxide piezoresistor. The product, the high-potential gradient zinc oxide piezoresistor, is obtained through four steps of pressed forming, low-temperature sintering, coating the silver paste of an electrode and welding a leading wire of the electrode with the material as a raw material. The present invention has two-time high energy ball milling, so the grain size of the mixed powder of metal oxide is largely refined. Sintering temperature is only 900 DEG C, so the grain size of the prepared high-potential gradient zinc oxide piezoresistor is 1.5 to 3.5 mu m. Conventional equipment is used, and the present invention has the advantages of simple technology, low production cost, etc.
Description
Technical field
The present invention relates to a kind of preparation and application of high-potential gradient zinc oxide piezoresistive material, definitely say, relate to and a kind ofly prepare the method for high-potential gradient zinc oxide piezoresistive material and the application of this material, belong to the technical field of piezoresistive material manufacturing and application with low temperature sintering technology.
Background technology
Zinc-oxide piezoresistor has excellent volt-ampere characteristic, is widely used in the manufacturing arrester valve piece made.For realizing the miniaturization and the lightness of arrester valve piece made, reduce manufacturing cost, the exploitation high-potential gracient is a development trend
[1]Viswanath
[2]The superfine nano powder that uses colloidal suspension and centrifugal separation to obtain, the Zinc-oxide piezoresistor of preparing electric potential gradient up to 3000V/mm 750 ℃ of sintering temperatures.Duran
[3]Also utilize chemical method to make nano powder, having prepared electric potential gradient under 900 ℃ and 825 ℃ of double sintering temperature is the Zinc-oxide piezoresistor of 2000V/mm.Last two kinds of methods all exist complex process, shortcoming that cost is high, are difficult to form large-scale production.Oh
[4]Adopt non-oxidation bismuth meal end sintering for the first time, be coated with the way of sintering for the second time again behind the bismuth oxide-containing slurry, the electric potential gradient of Zinc-oxide piezoresistor of exploitation is 500-900V/mm, but the sintering temperature height, and for the first time and for the second time sintering temperature is 1200-1350 ℃ and 1000-1200 ℃ respectively.Fah
[5]Employing is refined to powder about 17nm near the high-energy ball milling method of industrialization technology, and first single shaft is suppressed isostatic compaction again, reduce to below 1100 ℃ in sintering temperature, has prepared the Zinc-oxide piezoresistor that electric potential gradient reaches 440V/mm.Alamdari
[6]Adopt the additive high-energy ball milling different with Fah, the electric potential gradient of the Zinc-oxide piezoresistors of preparation is 1550V/mm under 1000 ℃.But the sintering temperature of last two kinds of methods is still higher, and equal pressing forming technology increases cost.
List of references:
[1] basic research of Li Sheng great waves .ZnO piezoresistive wafer and technical development dynamic [J]. electromagnetism lightning arrester, 1998, (3): 42-48.
[2]R.N.Viswanath,S.Ramasamy,R.Ramamoorthy,etal.Preparation?andcharacterization?of?nanocrystalline?ZnO?based?materials?for?varistorapplications[J].Nanostructured?materials,1995,6:993-996.
[3]P.Duran,F.Capel,J.Tartaj,C.Moure.Effects?of?low-temperature?annealing?onthe?microstructure?and?electrical?properties?of?doped-ZnO?varistors[J].KeyEngineering?Materials,2002,206-213:1389-1392.
[4]Myung?H.Oh,Kyung?J,Lee,In?J.Chung,etal.Fabrication?method?for?highvoltage?zinc?oxide?varistor[P].U.S.:5004573,Apr.2,1991.
[5]C.P.Fah,J.Wang.Effect?of?high-energy?mechanical?activation?on?themicrostructure?and?electrical?properties?of?ZnO-based?varistors[J],Solid?StateIonics,2000,132:107-117.
[6]H.D.Alamdari,S.Boily,M.Blouin,etal.High?energy?ball?milled?nanocrystallineZnO?varistors[J].Materials?Science?Forum,2000,343-346:909-917.
Summary of the invention
First technical problem that the present invention will solve provides a kind of preparation method of high-potential gradient zinc oxide piezoresistive material.This method has simple, the easy operating of technology, and is not high to equipment requirements, the advantage that production cost is low.
The technical scheme that the present invention solves the problems of the technologies described above is to be purchased micron order zinc oxide ZnO, bismuth oxide Bi
2O
3, antimonous oxide Sb
2O
3, chrome green Cr
2O
3, cobalt sesquioxide Co
2O
3With manganese dioxide MnO
2Be raw material, with raw material ZnO: Bi in molar ratio
2O
3: Sb
2O
3: Cr
2O
3: Co
2O
3: MnO
2It is 96.5: 0.7: 1.0: mix at 0.5: 0.8: 0.5,, get high-potential gradient zinc oxide piezoresistive material by the high energy fine grinding first time, low-temperature sintering, three steps of high energy fine grinding for the second time.Described material is the even mixed powder of above-mentioned oxidate nano level powder.
Now describe above-mentioned technical scheme in detail.
A kind of preparation method of high-potential gradient zinc oxide piezoresistive material is characterized in that, the concrete operations step:
The first step is the high energy fine grinding for the first time
To be purchased micron order zinc oxide ZnO, bismuth oxide Bi
2O
3, antimonous oxide Sb
2O
3, chrome green Cr
2O
3, cobalt sesquioxide Co
2O
3With manganese dioxide MnO
2Powder is raw material, ZnO in molar ratio: Bi
2O
3: Sb
2O
3: Cr
2O
3: Co
2O
3: MnO
2It is 96.5: 0.7: 1.0: be mixed into the metal oxide mixed powder at 0.5: 0.8: 0.5, this mixed powder is put into high energy ball mill, be respectively 300-650rpm and 15-40 at rotating speed and ball powder ratio: under 1 the high-energy ball milling condition, in absolute ethyl alcohol wet-milling 2-10 hour, oven dry, this mixed powder under identical high-energy ball milling condition, was dry grinded 0.5 hour again, got dry metal oxide mixed powder;
The second step low-temperature sintering
After the dry metal oxide mixed powder compacting that the first step is obtained, at 350-650 ℃ of following low-temperature sintering 1.5-2.5 hour, the sintering block;
The high energy fine grinding for the second time of the 3rd step
The high-energy ball milling condition: identical with the first step, after the sintering block that second step was obtained was pulverized, in absolute ethyl alcohol wet-milling 3-6 hour, oven dry was dry grinded 0.5 hour again, high-potential gradient zinc oxide piezoresistive material.
Technical scheme of the present invention is further characterized in that high energy ball mill is the planetary high-energy ball mill that adopts wear-resisting ball of steel and nylon jar.
Second technical problem that the present invention will solve provides the application of high-potential gradient zinc oxide piezoresistive material, definitely says, providing more than one to state the material that makes is the method for feedstock production high-potential gradient zinc oxide piezoresistive.
The present invention realizes above-mentioned technical problem by the following technical solutions.With the above-mentioned material that makes is raw material, by compression moulding, low-temperature sintering, be coated with electrode silver plasm and welding electrode went between for four steps, high-potential gradient zinc oxide piezoresistive.
Now carefully state described technical scheme.
A kind of method for preparing high-potential gradient zinc oxide piezoresistive is characterized in that, the concrete operations step:
First step compression moulding
It is 5.50-5.57g/cm that high-potential gradient zinc oxide piezoresistive material is pressed into density
3The cylindricality entity;
The second step low-temperature sintering
The cylindricality entity that the first step obtains is put into resistance furnace, 900 ℃ following low-temperature sintering 2-8 hour;
The 3rd step was coated with electrode silver plasm
Go on foot on two end faces of the cylindricality entity that burns till second, coat electrode silver plasm, put into resistance furnace, 600 ℃ are incubated 10-30 minute down, cool to room temperature with the furnace;
The 4th step welding electrode lead-in wire
Go on foot on the electrode silver plasm face that burns till the 3rd, adopt soldering processes welding electrode lead-in wire, get high-potential gradient zinc oxide piezoresistive.
The index of the said goods: density is 5.50-5.57g/cm
3, pressure-sensitive current potential (V
1mA) gradient is 820-900V/mm, nonlinear exponent is 31-40, leakage current (0.75V
1mABe 6.27-9.60 μ A down).
Compare with background technology, the present invention has following outstanding advantage:
(1) X-ray diffraction (XRD) the analysis showed that, behind twice high-energy ball milling, the crystallite dimension of metal oxide mixed powder is reduced to about 22nm, and granularity is refinement greatly, guarantees to have good low-temperature sintering performance.
The low temperature sintering technology in (2) second steps makes between each component of metal oxide mixed powder and carries out certain solid phase reaction, the degree that is uniformly dispersed of each component improves greatly, simultaneously owing to reduced the activity of raw material, improved the firing property of raw material, the metal oxide mixed powder sintered body that obtains uniformity has been had great facilitation.
(3) sintering temperature reduces greatly, only is 900 ℃.Sem fracture analysis shows that the crystallite dimension of the high-potential gradient zinc oxide piezoresistive that the inventive method makes is 1.5-3.5 μ m.
(4) adopt conventional equipment, technology simple, production cost is low.
The high-potential gradient zinc oxide piezoresistive of the related method preparation of the present invention with the performance comparison of quasi-resistance, is listed in table 1 with both at home and abroad.
Table 1
Piezo-resistance | Comparison other | Density (g/cm 3) | Pressure-sensitive electric potential gradient (V/mm) | Nonlinear exponent | Sintering temperature (℃) |
Zinc-oxide piezoresistor | The Fah high-energy ball milling method | 5.51-5.59 | 420-440 | Greater than 50 | 1100 |
Zinc-oxide piezoresistor | Domestic rare earth doped method | —— | 583 | 36 | 1100-1200 |
Zinc-oxide piezoresistor | The present invention | 5.50-5.57 | 820-900 | 31-40 | 900 |
Description of drawings
Fig. 1 is the metal oxide mixed powder through high-energy ball milling: after the processing of wet-milling in 5 hours and dry grinding in 1 hour, and its X ray diffracting spectrum.
Fig. 2 is the metal oxide mixed powder through high-energy ball milling: after wet-milling in 5 hours and dry grinding in 1 hour, 900 ℃ of sintering temperatures and the processing that is incubated 2 hours, and its ESEM fracture apperance.
Embodiment
All embodiment all operate according to the preparation method's of the preparation method of above-mentioned high-potential gradient zinc oxide piezoresistive material and above-mentioned high-potential gradient zinc oxide piezoresistive operating procedure fully.
Embodiment 1
(1) preparation high-potential gradient zinc oxide piezoresistive material
In the first step, to be purchased micron order zinc oxide ZnO, bismuth oxide Bi
2O
3, antimonous oxide Sb
2O
3, chrome green Cr
2O
3, cobalt sesquioxide Co
2O
3With manganese dioxide MnO
2Powder is raw material, ZnO in molar ratio: Bi
2O
3: Sb
2O
3: Cr
2O
3: Co
2O
3: MnO
2It is 96.5: 0.7: 1.0: be mixed into the metal oxide mixed powder at 0.5: 0.8: 0.5.High energy ball mill is a planetary high-energy ball mill, adopts wear-resisting ball of steel and nylon jar.High-energy ball milling condition: rotating speed 620rpm, ball powder ratio 16: 1.Wet-milling is 2 hours in the absolute ethyl alcohol, and oven dry was dry grinded 0.5 hour.In second step, briquet under 10 tons of universal hydraulic machines, 380 ℃ of following low-temperature sinterings are 1.5 hours in the resistance furnace.In the 3rd step, the sintering block is pulverized.High-energy ball milling condition: identical with the first step.Wet-milling is 3 hours in the absolute ethyl alcohol, and oven dry was dry grinded 0.5 hour, gets high-potential gradient zinc oxide piezoresistive material.
(2) preparation high-potential gradient zinc oxide piezoresistive
In the first step, the high-potential gradient zinc oxide piezoresistive material of drying is pressed into density under 10 tons of universal hydraulic machines be 5.50g/cm
3The cylindricality entity, as the cylindrical standard specimen of Φ 10 * 2.0mm.In second step, standard specimen is put into resistance furnace, 900 ℃ of following low-temperature sinterings 2 hours.In the 3rd step, after burning till on two end faces of standard specimen, coating electrode silver plasm equably, put into resistance furnace, 600 ℃ are incubated 10 minutes down, cool to room temperature with the furnace.In the 4th step, on the electrode silver plasm face that burns till, adopt soldering processes welding electrode lead-in wire, get high-potential gradient zinc oxide piezoresistive.
The said goods, the technical indicator of high-potential gradient zinc oxide piezoresistive: density is 5.50g/cm
3, pressure-sensitive current potential (V
1mA) gradient is 875.44V/mm, nonlinear exponent is 31.5, leakage current (0.75V
1mABe 9.60 μ A down).
(1) preparation high-potential gradient zinc oxide piezoresistive material
In the first step, to be purchased micron order zinc oxide ZnO, bismuth oxide Bi
2O
3, antimonous oxide Sb
2O
3, chrome green Cr
2O
3, cobalt sesquioxide Co
2O
3With manganese dioxide MnO
2Powder is raw material, ZnO in molar ratio: Bi
2O
3: Sb
2O
3: Cr
2O
3: Co
2O
3: MnO
2It is 96.5: 0.7: 1.0: be mixed into the metal oxide mixed powder at 0.5: 0.8: 0.5.High energy ball mill is a planetary high-energy ball mill, adopts wear-resisting ball of steel and nylon jar.High-energy ball milling condition: rotating speed 460rpm, ball powder ratio 20: 1.Wet-milling is 2 hours in the absolute ethyl alcohol, and oven dry was dry grinded 0.5 hour.In second step, briquet under 15 tons of universal hydraulic machines, 550 ℃ of following low-temperature sinterings are 2 hours in the resistance furnace.In the 3rd step, the sintering block is pulverized.High-energy ball milling condition: identical with the first step.Wet-milling is 3 hours in the absolute ethyl alcohol, and oven dry was dry grinded 0.5 hour, gets high-potential gradient zinc oxide piezoresistive material.
(2) preparation high-potential gradient zinc oxide piezoresistive
In the first step, the high-potential gradient zinc oxide piezoresistive material of drying is pressed into density under 15 tons of universal hydraulic machines be 5.56g/cm
3The cylindricality entity, as the cylindrical standard specimen of Φ 10 * 2.0mm.In second step, standard specimen is put into resistance furnace, 900 ℃ of following low-temperature sinterings 4 hours.In the 3rd step, after burning till on two end faces of standard specimen, coating electrode silver plasm equably, put into resistance furnace, 600 ℃ are incubated 20 minutes down, cool to room temperature with the furnace.In the 4th step, on the electrode silver plasm face that burns till, adopt soldering processes welding electrode lead-in wire, get high-potential gradient zinc oxide piezoresistive.
The said goods, the technical indicator of high-potential gradient zinc oxide piezoresistive: density is 5.56g/cm
3, pressure-sensitive current potential (V
1mA) gradient is 819.77V/mm, nonlinear exponent is 36, leakage current (0.75V
1mABe 6.27 μ A down).
Embodiment 3.
(1) preparation high-potential gradient zinc oxide piezoresistive material
In the first step, to be purchased micron order zinc oxide ZnO, bismuth oxide Bi
2O
3, antimonous oxide Sb
2O
3, chrome green Cr
2O
3, cobalt sesquioxide Co
2O
3With manganese dioxide MnO
2Powder is raw material, ZnO in molar ratio: Bi
2O
3: Sb
2O
3: Cr
2O
3: Co
2O
3: MnO
2It is 96.5: 0.7: 1.0: be mixed into the metal oxide mixed powder at 0.5: 0.8: 0.5.High energy ball mill is a planetary high-energy ball mill, adopts wear-resisting ball of steel and nylon jar.High-energy ball milling condition: rotating speed 320rpm, ball powder ratio 40: 1.Wet-milling is 8 hours in the absolute ethyl alcohol, and oven dry was dry grinded 0.5 hour.In second step, briquet under 25 tons of universal hydraulic machines, 630 ℃ of following low-temperature sinterings are 2.5 hours in the resistance furnace.In the 3rd step, the sintering block is pulverized.High-energy ball milling condition: identical with the first step.Wet-milling is 6 hours in the absolute ethyl alcohol, and oven dry was dry grinded 0.5 hour, gets high-potential gradient zinc oxide piezoresistive material.
(2) preparation high-potential gradient zinc oxide piezoresistive
In the first step, the high-potential gradient zinc oxide piezoresistive material of drying is pressed into density under 25 tons of universal hydraulic machines be 5.57g/cm
3The cylindricality entity, as the cylindrical standard specimen of Φ 10 * 2.0mm.In second step, standard specimen is put into resistance furnace, 900 ℃ of following low-temperature sinterings 4 hours.In the 3rd step, after burning till on two end faces of standard specimen, coating electrode silver plasm equably, put into resistance furnace, 600 ℃ are incubated 30 minutes down, cool to room temperature with the furnace.In the 4th step, on the electrode silver plasm face that burns till, adopt soldering processes welding electrode lead-in wire, get high-potential gradient zinc oxide piezoresistive.
The said goods, the technical indicator of high-potential gradient zinc oxide piezoresistive: density is 5.57g/cm
3, the pressure-sensitive current potential (V of pressure-sensitive current potential
1mA) gradient is 870.00V/mm, nonlinear exponent is 40, leakage current (0.75V
1mABe 8.37 μ A down).
Claims (3)
1. the preparation method of a high-potential gradient zinc oxide piezoresistive material is characterized in that, the concrete operations step:
The first step is the high energy fine grinding for the first time
To be purchased micron order zinc oxide ZnO, bismuth oxide Bi
2O
3, antimonous oxide Sb
2O
3, chrome green Cr
2O
3, cobalt sesquioxide Co
2O
3With manganese dioxide MnO
2Powder is raw material, ZnO in molar ratio: Bi
2O
3: Sb
2O
3: Cr
2O
3: Co
2O
3: MnO
2It is 96.5: 0.7: 1.0: be mixed into the metal oxide mixed powder at 0.5: 0.8: 0.5, this mixed powder is put into high energy ball mill, be respectively 300-650rpm and 15-40 at rotating speed and ball powder ratio: under 1 the high-energy ball milling condition, in absolute ethyl alcohol wet-milling 2-10 hour, oven dry, this mixed powder under identical high-energy ball milling condition, was dry grinded 0.5 hour again, got dry metal oxide mixed powder;
The second step low-temperature sintering
After the dry metal oxide mixed powder compacting that the first step is obtained, at 350-650 ℃ of following low-temperature sintering 1.5-2.5 hour, the sintering block;
The high energy fine grinding for the second time of the 3rd step
The high-energy ball milling condition: identical with the first step, after the sintering block that second step was obtained was pulverized, in absolute ethyl alcohol wet-milling 3-6 hour, oven dry was dry grinded 0.5 hour again, high-potential gradient zinc oxide piezoresistive material.
2. the preparation method of high-potential gradient zinc oxide piezoresistive material according to claim 1 is characterized in that, high energy ball mill is the planetary high-energy ball mill that adopts wear-resisting ball of steel and nylon jar.
3. one kind is raw material with the described high-potential gradient zinc oxide piezoresistive material of claim 1, prepares the method for high-potential gradient zinc oxide piezoresistive, it is characterized in that the concrete operations step:
First step compression moulding
It is 5.50-5.57g/cm that high-potential gradient zinc oxide piezoresistive material is pressed into density
3The cylindricality entity;
The second step low-temperature sintering
The cylindricality entity that the first step obtains is put into resistance furnace, 900 ℃ following low-temperature sintering 2-8 hour;
The 3rd step was coated with electrode silver plasm
Go on foot on two end faces of the cylindricality entity that burns till second, coat electrode silver plasm, put into resistance furnace, 600 ℃ are incubated 10-30 minute down, cool to room temperature with the furnace;
The 4th step welding electrode lead-in wire
Go on foot on the electrode silver plasm face that burns till the 3rd, adopt soldering processes welding electrode lead-in wire, get high-potential gradient zinc oxide piezoresistive.
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CN101286393B (en) * | 2008-05-16 | 2011-06-08 | 昆明理工大学 | Stratified structure low-voltage ZnO piezoresistor preparation method |
DE102009023846B4 (en) * | 2009-02-03 | 2024-02-01 | Tdk Electronics Ag | Varistor ceramic, multilayer component comprising the varistor ceramic, manufacturing process for the varistor ceramic |
WO2011035015A1 (en) | 2009-09-17 | 2011-03-24 | E. I. Du Pont De Nemours And Company | Thick-film conductive compositions with nano-sized zinc additive |
CN102260073A (en) * | 2011-04-28 | 2011-11-30 | 江苏大学 | Zinc-oxide-based low-voltage voltage-sensitive ceramic thin film material and preparation method thereof |
CN102531569A (en) * | 2012-03-09 | 2012-07-04 | 江苏新澳电力技术有限公司 | Formula of high-resistivity nano-paste and preparation process thereof |
CN104446437A (en) * | 2014-11-24 | 2015-03-25 | 南京信息工程大学 | Zinc oxide semiconductor ceramic chip for lightning protection and preparation method for zinc oxide semiconductor ceramic chip |
CN107021750A (en) * | 2017-03-24 | 2017-08-08 | 合肥羿振电力设备有限公司 | A kind of high sensitivity Zinc-oxide piezoresistor |
CN108863344B (en) * | 2018-10-10 | 2024-02-23 | 贵州大学 | Preparation process of high-performance ZnO pressure-sensitive ceramic |
CN109987933B (en) * | 2019-04-01 | 2021-11-02 | 中国科学院上海硅酸盐研究所 | Bi, Pr and V-free high-gradient ZnO voltage-sensitive ceramic material and preparation method thereof |
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CN1404074A (en) * | 2002-09-13 | 2003-03-19 | 四川大学 | Material for producing voltage sensitive zine oxide resistor |
JP2004088032A (en) * | 2002-08-29 | 2004-03-18 | Meidensha Corp | Method of manufacturing voltage nonlinear resistor |
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JP2004088032A (en) * | 2002-08-29 | 2004-03-18 | Meidensha Corp | Method of manufacturing voltage nonlinear resistor |
CN1404074A (en) * | 2002-09-13 | 2003-03-19 | 四川大学 | Material for producing voltage sensitive zine oxide resistor |
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