CN100485827C - Method for preparing high-potential gradient zinc oxide piezoresistance by low-temperature sintering - Google Patents
Method for preparing high-potential gradient zinc oxide piezoresistance by low-temperature sintering Download PDFInfo
- Publication number
- CN100485827C CN100485827C CNB2005101104140A CN200510110414A CN100485827C CN 100485827 C CN100485827 C CN 100485827C CN B2005101104140 A CNB2005101104140 A CN B2005101104140A CN 200510110414 A CN200510110414 A CN 200510110414A CN 100485827 C CN100485827 C CN 100485827C
- Authority
- CN
- China
- Prior art keywords
- zinc oxide
- energy ball
- potential gradient
- ball mill
- sintering
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Abstract
The present invention relates to a method for preparing zinc oxide piezoresistive materials with high-potential gradient, which belongs to the technical field of manufacturing piezoresistive materialsThe preparation method for high-potential gradient ZnO piezoresistor material comprises: with high-energy ball grinding technology, adding rare earth oxides included Bi2O3, Sb2O3, Cr2O3, Co2O3, MnO2, . The zinc oxide piezoresistive materials with high-potential gradient are prepared by that high-energy ball milling technology is adopted, and rare-earth oxides such as Bi2 O3, Sb2 O3, Cr2 O3, Co2 O3and Y2O3; sintering at 800Deg, and obtaining the product. The advantages of this invention comprises: simple process technology, low sintering temperature, fit to traditional device, well properties o, MnO2 and Y2 O3 are added to zinc oxide, and then sintered at a temperature of 800 DEG C. The preparation method of the present invention has the following advantages that the process is simplified bf the product, 5.50-5.64g/cm3 density, 1845.66-2233.33V/mm voltage-sensitive potential gradient, 21.3-25.8 nonlinear index, and 1.55-10.2muA drain current (given 0.75V1mA). y saving the traditional processes of presintering and granulation, the sintering temperature which is 800 DEG C is low, the method has low equipment requirements, the traditional equipment can meet the requirements, the high-energy ball milling makes crystal grains refined and low-temperature activity increased, a right additive amount of Y2O3 can prevent ZnO crystal grains from growing and increase non-linear index of finished products, and the products with 5.50 to 5.64 g/ cm<3> of density have favorable performance, 1845.66 to 2233.33 V/mm of pressure sensitive potential (V<1mA>) gradient, 21.3 to 25.8 of non-linear index and 1.55 to 10.2 mu A of leakage current at 0.75 V<1mA>.
Description
Technical field
The present invention relates to a kind of method for preparing high-potential gradient zinc oxide piezoresistive, belong to piezo-resistance manufacturing technology field.
Background technology
Zinc-oxide piezoresistor has excellent volt-ampere characteristic, is widely used in the manufacturing arrester valve piece made.For realizing the miniaturization and the lightness of arrester valve piece made, reduce manufacturing cost, the exploitation high-potential gracient is a development trend
[1]Viswanath
[2]The superfine nano powder that uses colloidal suspension and centrifugal separation to obtain, the Zinc-oxide piezoresistor of preparing electric potential gradient up to 3000V/mm 750 ℃ of sintering temperatures.Duran
[3]The nano powder that also utilizes chemical method to make, having prepared electric potential gradient under 900 ℃ and 825 ℃ of double sintering temperature is the Zinc-oxide piezoresistor of 2000V/mm.Last two kinds of methods all exist complex process, shortcoming that cost is high, are difficult to form large-scale production.0h
[4]Adopt non-oxidation bismuth meal end sintering for the first time, be coated with the way of double sintering again behind the bismuth oxide-containing slurry, the zinc oxide electric potential gradient of exploitation is 500-900V/mm, but sintering temperature height (once sintered 1200-1350 ℃, secondary is 1000-1200 ℃).Fah
[5]Then adopt high-energy ball milling method, powder is refined to about 17nm near industrialization technology, first single shaft compacting, isostatic compaction is reduced to sintering temperature under 1100 ℃ again, has prepared the Zinc-oxide piezoresistor that electric potential gradient reaches 440V/mm.Alamdari
[6]Adopt the additive high-energy ball milling different with Fah, the electric potential gradient of the Zinc-oxide piezoresistors of preparation is 1550V/mm under 1000 ℃.But both temperature are still higher, and equal pressing forming technology increases cost.Bernik
[7]By adding rare earth oxide Y
2O
3, make the zinc oxide grain size be reduced to 5.4 μ m from 11.3, electric potential gradient is promoted to 274V/mm from 150.Nahm
[8]Also by in containing Pr zinc oxide system, adding Y
2O
3, make electric potential gradient be increased to 748.1V/mm from 39.4.But not only the electric potential gradient absolute value is low for the two, and sintering temperature too high (all greater than 1200 ℃).
List of references
[1] basic research of Li Sheng great waves .ZnO piezoresistive wafer and technical development dynamic [J]. electromagnetism lightning arrester, 1998, (3): 42-48.
[2]R.N.Viswanath，S.Ramasamy，R.Ramamoorthy，etal.Preparation?and?characterization?ofnanocrystalline?ZnO?based?materials?for?varistor?applications[J].Nanostructuredmaterials，1995，6：993-996.
[3]P.Duran，F.Capel，J.Tartaj，C.Moure.Effects?of?low-temperature?annealing?on?the?microstructureand?electrical?properties?of?doped-ZnO?varistors[J].Key?EngineeringMaterials，2002，206-213：1389-1392.
[4]Myung?H.Oh，Kyung?J，Lee，In?J.Chung，etal.Fabrication?method?for?high?voltage?zinc?oxidevaristor[P].U.S.：5004573，Apr.2，1991.
[5]C.P.Fah，，J.Wang.Effect?of?high-energy?mechanical?activation?on?the?microstructure?andelectrical?properties?of?ZnO-based?varistors[J]，Solid?State?Ionics，2000，132：107-117.
[6]H.D.Alanmdari，S.Boily，M.Blouin，etal.High?energy?ball?milled?nanocrystalline?ZnOvaristors[J].Materials?Science?Forum，2000，343-346：909-917.
[7]S.Bernik，S.Macek，B.Ai.Microstructural?and?electrical?characteristics?of?Y
2O
3-dopedZnO-Bi
2O
3-based?varistor?ceramics[J].Journal?of?the?European?CeramicSociety，2001，21：1875-1878.
[8]C-W?Nahm，B-C?Shin，B-H?Min.Microstructure?and?electrical?properties?of?Y
2O
3-dopedZnO-Pr
6O
11-based?varistor?ceramics[J].Materials?Chemistry?and?Physics，2003，82：157-164.
Summary of the invention
The technical problem to be solved in the present invention is to release a kind of method for preparing high-potential gradient zinc oxide piezoresistive.This method has simple, the easy operating of technology, the not high and low advantage of production cost to equipment requirements.The properties of product of this method preparation are good, and electric potential gradient height, density are big, even tissue, non linear coefficient are higher, have following electrical performance indexes: electric potential gradient 1800～2200V/mm, and nonlinear exponent 21.3～25.8, leakage current is less than 10 μ A.
The present invention is resolved above-mentioned technical problem by following technical scheme: adopt high-energy ball-milling process, by add rare earth oxide in zinc oxide (ZnO): bismuth oxide (Bi
2O
3), antimonous oxide (Sb
2O
3), chrome green (Cr
2O
3), cobalt sesquioxide (Co
2O
3), manganese dioxide (MnO
2) and yttria (Y
2O
3), at 800 ℃ of following sintering, prepare high-potential gradient zinc oxide piezoresistive.
Now describe technical scheme of the present invention in detail.
A kind of method for preparing high-potential gradient zinc oxide piezoresistive is characterized in that, comprises following operating procedure:
The wet-milling of first step high energy
Get and be purchased micron order zinc oxide, bismuth oxide, antimonous oxide, chrome green, cobalt sesquioxide, manganese dioxide and yttria powder, press zinc oxide: bismuth oxide: antimonous oxide: chrome green: cobalt sesquioxide: manganese dioxide: the molar percentage of yttria=(96.5-X): the mixed of 0.7:1.0:0.5:0.8:0.5:X, X=0.02～0.10 wherein, put into high energy ball mill, with rotating speed 450～550rpm, ball powder ratio 20:1, wet-milling in absolute ethyl alcohol, the wet-milling time is 3～7 hours, from high energy ball mill, take out, 150～250 ℃ of oven dry down obtain dry mixed powder in resistance furnace;
The high energy dry grinding of second step
The mixed powder of the drying that the first step is made is put into high energy ball mill, is 20:1 with rotating speed 450～550rpm, ball powder ratio, dry grinding, and the dry grinding time is 0.5～1.5 hour, takes out from high energy ball mill, obtains uniform nanometer mixed powder;
The 3rd one-step forming
With uniform nanometer mixed powder compression moulding under 10～40 t hydraulic press that second step made, get the standard specimen of φ 10.0 * 2.0mm;
The 4th step burnt till
The 3rd standard specimen that make of step is put into resistance furnace, and 800 ℃ of following sintering 2 hours heat up in the stove and rate of temperature fall is 5 ℃/min, obtain the sintering standard specimen;
The 5th step was coated with electrode silver plasm
Go on foot on two end faces of the sintering standard specimen that makes the 4th, coat electrode silver plasm, put into resistance furnace, 600 ℃ are incubated 15 minutes down, cool to room temperature with the furnace, obtain the sintering standard specimen that end face scribbles electrode silver plasm;
The 6th step soldering contact conductor
Scribble soldering contact conductor on the end face of sintering standard specimen of electrode silver plasm at the 5th end face that make of step, the finished product high-potential gradient zinc oxide piezoresistive.
The performance index that finished product of the present invention has: density is 5.50～5.64g/cm
3Pressure-sensitive current potential (V
1mA) gradient is 1845.66～2233.33V/mm; Nonlinear exponent is 21.3～25.8; Leakage current (0.75V
1mABe 1.55～10.2 μ A down).
Technical scheme of the present invention is further characterized in that in the first step, high energy ball mill is a planetary high-energy ball mill, adopts wear-resisting ball of steel and nylon jar, and rotating speed is 500rpm, and the wet-milling time is 5 hours, and the furnace temperature of resistance furnace is 200 ℃.
Technical scheme of the present invention is further characterized in that in second step, high energy ball mill is a planetary high-energy ball mill, adopts wear-resisting ball of steel and nylon jar, and rotating speed is 500rpm, and the dry grinding time is 1 hour.
Technical scheme of the present invention is further characterized in that, in the 3rd step, and the compression moulding under 25 t hydraulic press of nanometer mixed powder.
Technical scheme of the present invention is further characterized in that in the first step, high energy ball mill is a planetary high-energy ball mill, adopt wear-resisting ball of steel and nylon jar, rotating speed is 500rpm, and the wet-milling time is 5 hours, the furnace temperature of resistance furnace is 200 ℃, in second step, high energy ball mill is a planetary high-energy ball mill, adopts wear-resisting ball of steel and nylon jar, rotating speed is 500rpm, the dry grinding time is 1 hour, in the 3rd step, and the compression moulding under 25 t hydraulic press of nanometer mixed powder.
The present invention has following outstanding advantage:
(1) high-energy ball milling increases grain refinement, low temperature active; Add an amount of Y
2O
3, can not only stop growing up of ZnO crystal grain, and can also improve the nonlinear exponent of finished product.More than two measures guaranteed that resistance behind 800 ℃ of sintering, had both had high-potential gracient, have the higher non-linearity index again.
(2) compare with traditional handicraft, sintering temperature reduces significantly, only is 800 ℃.
(3) traditional pre-burning and granulating working procedure have been saved in work simplification.
(4) not high to equipment requirements, legacy equipment can meet the demands.
Subordinate list and explanation thereof
Table 1 is the prescription of high-potential gradient zinc oxide piezoresistive of the present invention.
Table 1
| Constituent element | ZnO | Bi 2O 3 | Sb 2O 3 | Cr 2O 3 | Co 2O 3 | MnO 2 | Y 2O 3 |
| Mole, % | 96.5-X | 0.7 | 1.0 | 0.5 | 0.8 | 0.5 | X＝0.02～0.10 |
Table 2 is high-potential gradient zinc oxide piezoresistives and external similar electric 0 performance comparison that hinders that the present invention prepares.
Table 2
| Resistance | Comparison other | Relative density (%) | Electric potential gradient (V/mm) | Nonlinear exponent | Firing temperature (℃) |
| Zinc-oxide piezoresistor | Nahm adds Y 2O 3Method | 95.67 | 748.1 | 51.2 | 1350 |
| Zinc-oxide piezoresistor | The Alamdari high-energy ball milling method | 99.95 | 1550 | 59 | 1000 |
| Zinc-oxide piezoresistor | The present invention | 99.82 | 2233.33 | 25.8 | 800 |
Embodiment
Embodiment 1
Get and be purchased micron order zinc oxide (ZnO), bismuth oxide (Bi
2O
3), antimonous oxide (Sb
2O
3), chrome green (Cr
2O
3), cobalt sesquioxide (Co
2O
3), manganese dioxide (MnO
2) and yttria (Y
2O
3) powder, mix by following prescription, put into planetary high-energy ball mill, adopt wear-resisting ball of steel and nylon jar, rotating speed 550rpm, ball powder ratio 20:1, wet-milling is after 3 hours in absolute ethyl alcohol, from spherical tank, take out, 150 ℃ of oven dry in resistance furnace, recipe calculation: with X=0.02 substitution following formula, zinc oxide: bismuth oxide: antimonous oxide: chrome green: cobalt sesquioxide: manganese dioxide: the molar percentage of yttria=(96.5-X): 0.7:1.0:0.5:0.8:0.5:X, must fill a prescription zinc oxide: bismuth oxide: antimonous oxide: chrome green: cobalt sesquioxide: manganese dioxide: the molar percentage=96.48:0.7:1.0:0.5:0.8:0.5:0.02 of yttria.With the oven dry mixed powder under identical ball milling condition, dry grind after 0.5 hour, from spherical tank, take out.Mixed powder is pressed into φ 10 * 2.0mm standard specimen under 10 t hydraulic press.Standard specimen is put into resistance furnace,, heat up in the stove and rate of temperature fall is 5 ℃/min in 800 ℃ of following sintering 2 hours.After burning till on the upper and lower surface of standard specimen, coating electrode silver plasm equably, put into resistance furnace, be incubated 15 minutes down at 600 ℃, cool to room temperature with the furnace.On the electrode silver plasm face that burns till, the soldering contact conductor obtains high-potential gradient zinc oxide piezoresistive.Its density is 5.57g/cm
3, pressure-sensitive current potential (V
1mA) gradient is 1845.66V/mm, nonlinear exponent is 25.8, leakage current (0.75V
1mABe 3.35 μ A down).
Embodiment 2
Get and be purchased micron order zinc oxide (ZnO), bismuth oxide (Bi
2O
3), antimonous oxide (Sb
2O
3), chrome green (Cr
2O
3), cobalt sesquioxide (Co
2O
3), manganese dioxide (MnO
2) and yttria (Y
2O
3) powder, mix by following prescription, put into planetary high-energy ball mill, adopt wear-resisting ball of steel and nylon jar, rotating speed 500rpm, ball powder ratio 20:1, wet-milling is after 5 hours in absolute ethyl alcohol, from spherical tank, take out, 200 ℃ of oven dry in resistance furnace, recipe calculation: with X=0.08 substitution following formula, zinc oxide: bismuth oxide: antimonous oxide: chrome green: cobalt sesquioxide: manganese dioxide: the molar percentage of yttria=(96.5-X): 0.7:1.0:0.5:0.8:0.5:X, must fill a prescription zinc oxide: bismuth oxide: antimonous oxide: chrome green: cobalt sesquioxide: manganese dioxide: the molar percentage=96.42:0.7:1.0:0.5:0.8:0.5:0.08 of yttria.With the oven dry mixed powder under identical ball milling condition, dry grind after 1 hour, from spherical tank, take out.Mixed powder is pressed into φ 10 * 2.0mm standard specimen under 25 t hydraulic press.Standard specimen is put into resistance furnace,, heat up in the stove and rate of temperature fall is 5 ℃/min in 800 ℃ of following sintering 2 hours.After burning till on the upper and lower surface of standard specimen, coating electrode silver plasm equably, put into resistance furnace, be incubated 15 minutes down at 600 ℃, cool to room temperature with the furnace.On the electrode silver plasm face that burns till, the soldering contact conductor obtains high-potential gradient zinc oxide piezoresistive.Its density is 5.55g/cm
3, pressure-sensitive current potential (V
1mA) gradient is 2110.45V/mm, nonlinear exponent is 24.3, leakage current (0.75V
1mABe 1.55 μ A down).
Embodiment 3
Get and be purchased micron order zinc oxide (ZnO), bismuth oxide (Bi
2O
3), antimonous oxide (Sb
2O
3), chrome green (Cr
2O
3), cobalt sesquioxide (Co
2O
3), manganese dioxide (MnO
2) and yttria (Y
2O
3) powder, mix by following prescription, put into planetary high-energy ball mill, adopt wear-resisting ball of steel and nylon jar, rotating speed 450rpm, ball powder ratio 20:1, wet-milling is after 7 hours in absolute ethyl alcohol, from spherical tank, take out, 250 ℃ of oven dry in resistance furnace, recipe calculation: with X=0.1 substitution following formula, zinc oxide: bismuth oxide: antimonous oxide: chrome green: cobalt sesquioxide: manganese dioxide: the molar percentage of yttria=(96.5-X): 0.7:1.0:0.5:0.8:0.5:X, must fill a prescription zinc oxide: bismuth oxide: antimonous oxide: chrome green: cobalt sesquioxide: manganese dioxide: the molar percentage=96.4:0.7:1.0:0.5:0.8:0.5:0.1 of yttria.With the oven dry mixed powder under identical ball milling condition, dry grind after 1 hour, from spherical tank, take out.Mixed powder is pressed into φ 10 * 2.0mm standard specimen under 40 t hydraulic press.Standard specimen is put into resistance furnace,, heat up in the stove and rate of temperature fall is 5 ℃/min in 800 ℃ of following sintering 2 hours.After burning till on the upper and lower surface of standard specimen, coating electrode silver plasm equably, put into resistance furnace, be incubated 15 minutes down at 600 ℃, cool to room temperature with the furnace.On the electrode silver plasm face that burns till, the soldering contact conductor obtains high-potential gradient zinc oxide piezoresistive.Its density is 5.50g/cm
3, pressure-sensitive current potential (V
1mA) gradient is 2233.33V/mm, nonlinear exponent is 21.3, leakage current (0.75V
1mABe 1.64 μ A down).
Claims (5)
1, a kind of method for preparing high-potential gradient zinc oxide piezoresistive is characterized in that, comprises following operating procedure:
The wet-milling of first step high energy
Get and be purchased micron order zinc oxide, bismuth oxide, antimonous oxide, chrome green, cobalt sesquioxide, manganese dioxide and yttria powder, press zinc oxide: bismuth oxide: antimonous oxide: chrome green: cobalt sesquioxide: manganese dioxide: the molar percentage of yttria=(96.5-X): the mixed of 0.7:1.0:0.5:0.8:0.5:X, X=0.02～0.10 wherein, put into high energy ball mill, with rotating speed 450～550rpm, ball powder ratio 20: 1, wet-milling in absolute ethyl alcohol, the wet-milling time is 3～7 hours, from high energy ball mill, take out, 150～250 ℃ of oven dry down obtain dry mixed powder in resistance furnace;
The high energy dry grinding of second step
The mixed powder of the drying that the first step is made is put into high energy ball mill, is 20:1 with rotating speed 450～550rpm, ball powder ratio, dry grinding, and the dry grinding time is 0.5～1.5 hour, takes out from high energy ball mill, obtains uniform nanometer mixed powder;
The 3rd one-step forming
With uniform nanometer mixed powder compression moulding under 10～40 t hydraulic press that second step made, get the standard specimen of φ 10.0 * 2.0mm;
The 4th step burnt till
The 3rd standard specimen that make of step is put into resistance furnace, and 800 ℃ of following sintering 2 hours heat up in the stove and rate of temperature fall is 5 ℃/min, obtain the sintering standard specimen;
The 5th step was coated with electrode silver plasm
Go on foot on two end faces of the sintering standard specimen that makes the 4th, coat electrode silver plasm, put into resistance furnace, 600 ℃ are incubated 15 minutes down, cool to room temperature with the furnace, obtain the sintering standard specimen that end face scribbles electrode silver plasm;
The 6th step soldering contact conductor
Scribble soldering contact conductor on the end face of sintering standard specimen of electrode silver plasm at the 5th end face that make of step, the finished product high-potential gradient zinc oxide piezoresistive.
2, the method for preparing high-potential gradient zinc oxide piezoresistive according to claim 1, it is characterized in that, in the first step, high energy ball mill is a planetary high-energy ball mill, adopt wear-resisting ball of steel and nylon jar, rotating speed is 500rpm, and the wet-milling time is 5 hours, and the furnace temperature of resistance furnace is 200 ℃.
3, the method for preparing high-potential gradient zinc oxide piezoresistive according to claim 1 is characterized in that, in second step, high energy ball mill is a planetary high-energy ball mill, adopt wear-resisting ball of steel and nylon jar, rotating speed is 500rpm, and the dry grinding time is 1 hour.
4, the method for preparing high-potential gradient zinc oxide piezoresistive according to claim 1 is characterized in that, in the 3rd step, and the compression moulding under 25 t hydraulic press of nanometer mixed powder.
5, the method for preparing high-potential gradient zinc oxide piezoresistive according to claim 1, it is characterized in that, in the first step, high energy ball mill is a planetary high-energy ball mill, adopt wear-resisting ball of steel and nylon jar, rotating speed is 500rpm, the wet-milling time is 5 hours, and the furnace temperature of resistance furnace is 200 ℃, in second step, high energy ball mill is a planetary high-energy ball mill, adopt wear-resisting ball of steel and nylon jar, rotating speed is 500rpm, and the dry grinding time is 1 hour, in the 3rd step, the compression moulding under 25 t hydraulic press of nanometer mixed powder.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005101104140A CN100485827C (en) | 2005-11-16 | 2005-11-16 | Method for preparing high-potential gradient zinc oxide piezoresistance by low-temperature sintering |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005101104140A CN100485827C (en) | 2005-11-16 | 2005-11-16 | Method for preparing high-potential gradient zinc oxide piezoresistance by low-temperature sintering |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1801409A CN1801409A (en) | 2006-07-12 |
| CN100485827C true CN100485827C (en) | 2009-05-06 |
Family
ID=36811310
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2005101104140A Expired - Fee Related CN100485827C (en) | 2005-11-16 | 2005-11-16 | Method for preparing high-potential gradient zinc oxide piezoresistance by low-temperature sintering |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100485827C (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102770924A (en) * | 2009-09-17 | 2012-11-07 | 纳幕尔杜邦公司 | Thick-film conductive compositions with nano-sized zinc additive |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101286393B (en) * | 2008-05-16 | 2011-06-08 | 昆明理工大学 | Stratified structure low-voltage ZnO piezoresistor preparation method |
| CN102699561A (en) * | 2012-06-21 | 2012-10-03 | 上海交通大学 | Composite brazing alloy for sealing solid oxide fuel cell and brazing technology of composite brazing alloy |
| CN103345997A (en) * | 2013-06-27 | 2013-10-09 | 桂林电子科技大学 | High electric potential gradient ZnO-based pressure-sensitive ceramic material and preparation method thereof |
| CN104341146A (en) * | 2014-06-10 | 2015-02-11 | 湖北文理学院 | Zinc oxide voltage-sensitive ceramic material for high-performance lightning arrester |
| CN104003709B (en) * | 2014-06-10 | 2016-06-15 | 湖北文理学院 | Spark gap Zinc oxide-base pressure-sensitive ceramic material and preparation method and application |
| CN105198402B (en) * | 2015-09-15 | 2018-01-02 | 湖南双创部落信息咨询服务有限责任公司 | A kind of Nanocrystalline Zno-based Varistor material and preparation method thereof |
| CN106316384B (en) * | 2016-08-29 | 2019-03-12 | 张颖 | A kind of piezoresistive material |
| CN107043535A (en) * | 2017-04-25 | 2017-08-15 | 晶锋集团股份有限公司 | A kind of bismuth, manganese, cobalt, zinc oxide polyimide composite film of niobium doping and preparation method thereof |
| CN108751978A (en) * | 2018-06-19 | 2018-11-06 | 承德伏安电工有限公司 | The preparation method of zinc oxide pressure-sensitive ceramic resistor disc |
| CN109734435A (en) * | 2018-11-19 | 2019-05-10 | 西安交通大学 | A kind of Nanocrystalline Zno-based Varistor material and preparation method |
| CN109987933B (en) * | 2019-04-01 | 2021-11-02 | 中国科学院上海硅酸盐研究所 | Bi, Pr and V-free high-gradient ZnO voltage-sensitive ceramic material and preparation method thereof |
-
2005
- 2005-11-16 CN CNB2005101104140A patent/CN100485827C/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102770924A (en) * | 2009-09-17 | 2012-11-07 | 纳幕尔杜邦公司 | Thick-film conductive compositions with nano-sized zinc additive |
| US9076571B2 (en) | 2009-09-17 | 2015-07-07 | E I Du Pont De Nemours And Company | Thick-film conductive compositions with nano-sized zinc additive |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1801409A (en) | 2006-07-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN100485827C (en) | Method for preparing high-potential gradient zinc oxide piezoresistance by low-temperature sintering | |
| CN100382205C (en) | Preparation and application of high-potential gradient zinc oxide piezoresistor material | |
| CN101786874B (en) | Process method for preparing low residual voltage ZnO varistor ceramic | |
| CN104478428B (en) | Zinc oxide piezoresistor material with high electric potential gradient | |
| CN102476949A (en) | Method for preparing electrical property-controllable zinc oxide (ZnO) piezoresistor material at low temperature | |
| CN101613199B (en) | High-performance zinc oxide composite ceramic voltage dependent resistor material and preparation method | |
| CN109650885A (en) | One kind mixing lanthanum niobate silver lead-free anti-ferroelectric energy storage ceramic material and preparation method thereof | |
| CN110272275B (en) | Zinc oxide resistance card and preparation method thereof | |
| CN102515742A (en) | High potential gradient zinc oxide pressure-sensitive resistor material and preparation process thereof | |
| CN102515741A (en) | Zinc oxide varistor material and preparation method thereof | |
| CN101279844A (en) | Zinc oxide pressure-sensitive ceramic material doped with composite rare-earth oxide | |
| CN104183342A (en) | New application and preparation method of copper calcium titanate (CaCu3Ti4O12) (CCTO) | |
| CN115073152B (en) | Laminated ceramic composite material, preparation method thereof, lanthanum chromate ceramic and preparation process thereof | |
| CN103787653A (en) | Preparation method of carbon-modified CaCu3Ti4O12 high dielectric material | |
| CN107759215A (en) | The method for preparing huge dielectric constant low-loss ceramic capacitor | |
| CN101702358A (en) | High voltage varistor and preparation method thereof | |
| CN1328212C (en) | Process for preparing ZnO-Bi2O3 series pressure-sensitive ceramic chamotte doped with rare-earth oxide | |
| CN101333104A (en) | Zinc oxide voltage-sensitive ceramic materials doped by superplasticity nanometer oxide and preparation method | |
| CN104557016A (en) | High-nonlinearity frit doped zinc oxide voltage-sensitive ceramic material | |
| CN110423110B (en) | Ultrahigh nonlinear ZnO-Bi2O3Base pressure sensitive ceramic and preparation method thereof | |
| CN100415681C (en) | ZnO-Bi2O3 pressure-sensitive ceramic dielectric doped with rare-earth oxide | |
| CN110922182A (en) | Preparation method of high-gradient low-leakage-current ceramic | |
| CN105601268A (en) | Formula of zinc oxide piezoresistor ceramic with favorable comprehensive electrical performance | |
| CN101286393B (en) | Stratified structure low-voltage ZnO piezoresistor preparation method | |
| CN100351206C (en) | Process for preparing ZnO-Bi2O3 series pressure-sensitive raw material doped with rare-earth oxide |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20090506 Termination date: 20121116 |