CN100415681C - ZnO-Bi2O3 pressure-sensitive ceramic dielectric doped with rare-earth oxide - Google Patents
ZnO-Bi2O3 pressure-sensitive ceramic dielectric doped with rare-earth oxide Download PDFInfo
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- CN100415681C CN100415681C CNB200610042720XA CN200610042720A CN100415681C CN 100415681 C CN100415681 C CN 100415681C CN B200610042720X A CNB200610042720X A CN B200610042720XA CN 200610042720 A CN200610042720 A CN 200610042720A CN 100415681 C CN100415681 C CN 100415681C
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- earth oxide
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Abstract
The present invention discloses a ZnO-Bi2O3 voltage sensitive ceramic dielectric doped with rare-earth oxides, which comprises the following components according to the mol percentage: 91% to 98% of ZnO, 0.1% to 1.0% of Bi2O3, 0.1% to 1.0% of Cr2O3, 0.1% to 1.0% of Co2O3, 0.1% to 1.0% of Ni2O3, 0.1% to 1.0% of MnCO3, 0.1% to 1.0% of SiO2, 0.01% to 0.2% of H3BO3, 0.001% to 0.01% of Al (NO3) 3.9H2O and 0.5% to 2% of Sb2 O3. The rare-earth oxides are Ce2 O3 or Gd2 O3, and the content of the Ce2 O3 or the Gd2 O3 is from 0.1% to 1.0%. The ceramic dielectric of the present invention is obtained through single doping work and double doping work for the rare-earth oxides (Ce2O3 or Gd2O3) which are sintered at 1100 to 1180 DEG C and adjusting the reasonable proportion of doping contents, and the potential gradient can be increased to more than 500 V/MM. The voltage sensitive ceramic dielectric of the present invention can be used for making arrester products of good quality of super high-voltage electric power systems.
Description
Technical field
The present invention relates to a kind of ZnO-Bi
2O
3Series pressure-sensitive ceramic medium, particularly a kind of doped with rare-earth oxide ZnO-Bi
2O
3The series pressure-sensitive ceramic medium.
Background technology
Improve ZnO-Bi
2O
3The conventional method of series pressure-sensitive ceramic electric potential gradient is the size that reduces ZnO crystal grain.If at ZnO-Bi
2O
3An amount of rare earth oxide mixes in the series pressure-sensitive ceramic, rare earth oxide or its formed grain boundaries that exists only in mutually, play significant " pinning " effect, obviously suppressed the growth of ZnO crystal grain, the ZnO crystallite dimension is dropped to about 5 μ m, thus corresponding electric potential gradient value can reach 400V/mm or more than.So doped with rare-earth oxide is to ZnO-Bi
2O
3Series pressure-sensitive ceramic carries out modification, is a kind of important method that improves the ceramic dielectric electric potential gradient.
At present, the emphasis about doped with rare-earth oxide mainly concentrates on the kind of additive to traditional Z nO-Bi
2O
3In the research of series pressure-sensitive ceramic microstructure impact, and for rare earth oxide doped and modified ZnO-Bi
2O
3The composition of series pressure-sensitive ceramic has had no open report.All can affect the raising of ceramic dielectric electric potential gradient and the improvement of comprehensive electrochemical properties if additive types is selected improper or addition is improper.
Summary of the invention
The objective of the invention is provides a kind of ZnO-Bi of doped with rare-earth oxide on the basis that the traditional pressure sensitive pottery forms
2O
3The composition of series pressure-sensitive ceramic prescription by conventional preparation method, can significantly improve the electric potential gradient of ceramic dielectric behind the sintering, improves the Universal electric performance.
For reaching above purpose, the present invention takes following technical scheme to be achieved:
A kind of ZnO-Bi of doped with rare-earth oxide
2O
3The series pressure-sensitive ceramic medium, by mole%, comprise that following component: ZnO is 91~98%; Bi
2O
3, Cr
2O
3, Co
2O
3, Ni
2O
3, MnCO
3And SiO
2Respectively be 0.1~1.0%; H
3BO
3Be 0.01~0.2%, Al (NO
3)
39H
2O is 0.001~0.01%; Sb
2O
3Be 0.5~2%; Rare earth oxide Ce
2O
3Or Gd
2O
3Content be 0.1~1.0%.
In the above-mentioned composition, component ZnO is preferably 94~97%; B component i
2O
3, Cr
2O
3, Co
2O
3, Ni
2O
3, MnCO
3And SiO
2Preferably respectively be 0.3~0.7%; Component H
3BO
3Be preferably 0.05~0.1%, component Al (NO
3)
39H
2O is preferably 0.002~0.006%; Component S b
2O
3Be preferably 0.7~1.2%; Rare earth oxide Ce
2O
3Or Gd
2O
3Be 0.3~0.7%; Preferably both have, and respectively be 0.3~0.7%.
Doped with rare-earth oxide ZnO-Bi provided by the present invention
2O
3The composition of series pressure-sensitive ceramic medium, by the adjustment to each additive component content, and to rare earth oxide Ce
2O
3, Gd
2O
3The single doping and the codope test, and the rational proportion of adjustment doping content, the series ceramic medium that obtains at 1100~1180 ℃ of sintering, electric potential gradient is mostly more than 450V/mm, reach as high as 520V/mm, leakage current and nonlinear exponent Universal electric performance indications are also fairly good simultaneously, and doping vario-property has obtained satisfied good effect.Pressure-sensitive ceramic dielectric of the present invention can be used for making the high-quality thunder arrester product of ultra-high/extra-high voltage power system.
Embodiment
The present invention is described in further detail below in conjunction with specific embodiment:
A kind of ZnO-Bi of doped with rare-earth oxide
2O
3The series pressure-sensitive ceramic medium, by mole%, comprise that following component: ZnO is 91~98%; Bi
2O
3, Cr
2O
3, Co
2O
3, Ni
2O
3, MnCO
3And SiO
2Respectively be 0.1~1.0%; H
3BO
3Be 0.01~0.2%, Al (NO
3)
39H
2O is 0.001~0.01%; Sb
2O
3Be 0.5~2%; Rare-earth oxide additives Ce
2O
3, Gd
2O
3Have at least a kind of; Described Ce
2O
3, Gd
2O
3Content respectively is 0.1~1.0%.List in table 1 concrete the composition, forms totally 18 of A~R.
Additive B i during the present invention forms
2O
3, its average grain diameter is at 1~10 μ m, and content is preferably between 0.3~0.7mol% between 0.1~1mol%, and content is crossed to hang down and will be caused the increase of leakage current and the reduction of nonlinear exponent; And too high levels will produce a large amount of pores because of volatilization.Additive Sb during the present invention forms
2O
3, its average grain diameter is 0.5~3 μ m, content is adjusted in 0.5~2.0mol% scope, is preferably in 0.75~1.2 scope to adjust Sb
2O
3Can improve electric potential gradient, improve the distribution of other additives in porcelain body, Sb
2O
3Content is crossed to hang down the homodisperse effect of additive can not be brought into play; And the too high ZnO crystal grain that will cause is too little, and this will affect the through-current capability of big electric current.Addition of C r during the present invention forms
2O
3, Co
2O
3, MnCO
3, Ni
2O
3, its average grain diameter is between 1~10 μ m, and each constituent content is adjusted in 0.1~1mol% scope, is preferably in 0.3~0.7mol% scope to adjust.
Table 1
Additive SiO during the present invention forms
2, its average grain diameter is between 0.3~1 μ m, and content is adjusted in 0.1~1mol% scope, is preferably in 0.3~0.7mol% scope to adjust.Additive H
3BO
3Content in 0.01~0.2mol% scope, adjust, be preferably between 0.05~0.1mol% and adjust.Additive A l (NO
3)
39H
2The content of O is lower, adjusts in 0.001~0.01mol% scope, is preferably in 0.002~0.006mol% scope to adjust.The present invention also is doped with rare earth oxide Ce in forming
2O
3Or Gd
2O
3, its average grain diameter is between 0.5~3 μ m, and content is adjusted in 0.1~1mol% scope, preferably both has, and each adjusts content in 0.3~0.7mol% scope; Doping content is excessively low, can not play the effect that suppresses the ZnO grain growth; Doping content is too high will to cause the decline of nonlinear exponent and the increase of leakage current.
The ZnO-Bi of above-mentioned doped with rare-earth oxide
2O
3The preparation method of series pressure-sensitive ceramic medium comprises the steps:
1) form A~R by table 1 and carry out the proportioning weighing, it is pure that the binder component that is adopted is reagent, and major ingredient ZnO is the technical pure of piezoresistor special use, and its median size is about 0.5 μ m.
2) after each composition and ratio weighing, respectively will be except ZnO, Al (NO
3)
39H
2All components mixing and ball milling beyond the O 20 hours is warming up to 900 ℃ of pre-burnings 30 minutes after 120 ℃ of oven dry.
3) component after the pre-burning is through pulverizing and ZnO, Al (NO again
3)
39H
2O mixes, and the polyvinyl alcohol water solution ball milling that adds 1wt% concentration was made slurry in 20 hours, then spray-dried one-tenth granulation material;
4) use the single-column press, be pressed into the disk shape green compact that are of a size of φ 26 * 9mm, form to press 6 for every kind, totally 108 of 18 compositions, binder removal under 450 ℃ ± 20 ℃ temperature together with 50 tons forming pressures.
5) be one group with per two of every kind behind binder removal composition (6), each is at 1100 ℃, and sintering is 4 hours under 1150 ℃ and 1180 ℃ of three temperature, and heating rate is 200 ℃/hour, is cooled to room temperature with 100 ℃/hour speed then; Obtain altogether 54 groups of dense sintering bodies of φ 20 * 8mm size, i.e. 18 embodiment of every kind of corresponding three different sintering temperatures of prescription, totally 54 embodiment by the aluminizing electrode, carry out electric performance test, and get its mean value after the end face polishing.
Table 2 has provided the electric performance test result of 1100 ℃ of agglomerating embodiment 1~18:
Table 2
Sample | Form | Potential gradient (V/mm) | Leakage current (μ A) | Nonlinear exponent |
Embodiment 1 | A | 280 | 0.5 | 35 |
Embodiment 2 | B | 278 | 0.2 | 36 |
Embodiment 3 | C | 277 | 0.2 | 35 |
Embodiment 4 | D | 315 | 55 | 8 |
Embodiment 5 | E | 360 | 45 | 10 |
Embodiment 6 | F | 346 | 27 | 9 |
Embodiment 7 | G | 460 | 15 | 15 |
Embodiment 8 | H | 480 | 13 | 14 |
Embodiment 9 | I | 482 | 13 | 12 |
Embodiment 10 | J | 490 | 16 | 12 |
Embodiment 11 | K | 500 | 18 | 13 |
Embodiment 12 | L | 508 | 17 | 12 |
Embodiment 13 | M | 500 | 18 | 12 |
Embodiment 14 | N | 510 | 20 | 11 |
Embodiment 15 | O | 520 | 20 | 11 |
Embodiment 16 | P | 479 | 21 | 9 |
Embodiment 17 | Q | 465 | 21 | 9 |
Embodiment 18 | R | 470 | 23 | 8 |
Table 3 has provided the electric performance test result of 1150 ℃ of agglomerating embodiment 19~36:
Table 3
Sample | Form | Potential gradient (V/mm) | Leakage current (μ A) | Nonlinear exponent |
Embodiment 19 | A | 250 | 0.3 | 40 |
Embodiment 20 | B | 246 | 0.2 | 42 |
Embodiment 21 | C | 245 | 0.2 | 39 |
Embodiment 22 | D | 316 | 45 | 12 |
Embodiment 23 | E | 335 | 35 | 14 |
Embodiment 24 | F | 341 | 35 | 13 |
Embodiment 25 | G | 456 | 12 | 19 |
Embodiment 26 | H | 476 | 11 | 18 |
Embodiment 27 | I | 478 | 11 | 16 |
Embodiment 28 | J | 487 | 12 | 16 |
Embodiment 29 | K | 450 | 13 | 17 |
Embodiment 30 | L | 455 | 12 | 16 |
Embodiment 31 | M | 485 | 13 | 16 |
Embodiment 32 | N | 486 | 15 | 15 |
Embodiment 33 | O | 486 | 15 | 15 |
Embodiment 34 | P | 435 | 16 | 13 |
Embodiment 35 | Q | 432 | 16 | 13 |
Embodiment 36 | R | 436 | 18 | 12 |
Table 4 has provided the electric performance test result of 1180 ℃ of agglomerating embodiment 37~54:
Table 4
Sample | Form | Potential gradient (V/mm) | Leakage current (μ A) | Nonlinear exponent |
Embodiment 37 | A | 200 | 0.3 | 45 |
Embodiment 38 | B | 198 | 0.2 | 45 |
Embodiment 39 | C | 198 | 0.3 | 44 |
Embodiment 40 | D | 257 | 45 | 15 |
Embodiment 41 | E | 258 | 35 | 16 |
Embodiment 42 | F | 271 | 35 | 16 |
Embodiment 43 | G | 445 | 12 | 25 |
Embodiment 44 | H | 450 | 11 | 24 |
Embodiment 45 | I | 451 | 11 | 24 |
Embodiment 46 | J | 450 | 12 | 22 |
Embodiment 47 | K | 452 | 13 | 23 |
Embodiment 48 | L | 455 | 12 | 22 |
Embodiment 49 | M | 455 | 13 | 22 |
Embodiment 50 | N | 460 | 13 | 22 |
Embodiment 51 | O | 460 | 15 | 21 |
Embodiment 52 | P | 410 | 16 | 19 |
Embodiment 53 | Q | 406 | 16 | 19 |
Embodiment 54 | R | 405 | 18 | 18 |
Can find out from table 2, table 3, table 4 test result, form G~O at 1100 ℃ of agglomerating embodiment 7~15, at 1150 ℃ of agglomerating embodiment 25~33, at 1180 ℃ of agglomerating embodiment 43~51, all more than 450V/mm, embodiment 15 is up to 520V/mm for potential gradient; All below 20 μ A, nonlinear exponent is all more than 11 for leakage current, and embodiment 43 is up to 25; Integrated performance index is fairly good.
Claims (3)
1. the ZnO-Bi of a doped with rare-earth oxide
2O
3The series pressure-sensitive ceramic medium is characterized in that, by mole%, comprise that following component: ZnO is 91~98%; Bi
2O
3, Cr
2O
3, Co
2O
3, Ni
2O
3, MnCO
3And SiO
2Respectively be 0.1~1.0%; H
3BO
3Be 0.01~0.2%, Al (NO
3)
39H
2O is 0.001~0.01%; Sb
2O
3Be 0.5~2%; Rare earth oxide Ce
2O
3, Gd
2O
3One or both, its content respectively is 0.1~1.0%.
2. the ZnO-Bi of doped with rare-earth oxide according to claim 1
2O
3The series pressure-sensitive ceramic medium is characterized in that, by mole%, comprise that following component: ZnO is 94~97%; Bi
2O
3, Cr
2O
3, Co
2O
3, Ni
2O
3, MnCO
3And SiO
2Respectively be 0.3~0.7%; H
3BO
3Be 0.05~0.1%, Al (NO
3)
39H
2O is 0.002~0.006%; Sb
2O
3Be 0.7~1.2%; Rare earth oxide Ce
2O
3, Gd
2O
3One or both, its content respectively is 0.3~0.7%.
3. the ZnO-Bi of doped with rare-earth oxide according to claim 2
2O
3The series pressure-sensitive ceramic medium is characterized in that, described rare earth oxide is Ce
2O
3And Gd
2O
3Two kinds, its content respectively is 0.3~0.7%.
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CN102030522A (en) * | 2010-11-17 | 2011-04-27 | 西安交通大学 | Low-equilibrium temperature ZnO-Bi2O3 series voltage-sensitive ceramic dielectric |
CN102557612A (en) * | 2012-01-11 | 2012-07-11 | 深圳顺络电子股份有限公司 | Low-dielectric-constant pressure-sensitive resistor material and preparation method thereof |
JP6231127B2 (en) * | 2012-12-27 | 2017-11-15 | リテルヒューズ・インク | Zinc oxide based varistor and method for producing the same |
CN113979740B (en) * | 2021-10-11 | 2023-12-15 | 平高集团有限公司 | Pressure-sensitive ceramic additive, pressure-sensitive ceramic material, pressure-sensitive ceramic and preparation method thereof, piezoresistor and preparation method thereof, and resistor element |
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Non-Patent Citations (2)
Title |
---|
稀土氧化物掺杂ZnO-Bi2O3系压敏陶瓷"软心"现象的研究. 成鹏飞,李盛涛.陶瓷学报,第27卷第1期. 2006 |
稀土氧化物掺杂ZnO-Bi2O3系压敏陶瓷"软心"现象的研究. 成鹏飞,李盛涛.陶瓷学报,第27卷第1期. 2006 * |
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