CN100370588C - Method and apparatus for liquid etching - Google Patents
Method and apparatus for liquid etching Download PDFInfo
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- CN100370588C CN100370588C CNB2004800041468A CN200480004146A CN100370588C CN 100370588 C CN100370588 C CN 100370588C CN B2004800041468 A CNB2004800041468 A CN B2004800041468A CN 200480004146 A CN200480004146 A CN 200480004146A CN 100370588 C CN100370588 C CN 100370588C
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31144—Etching the insulating layers by chemical or physical means using masks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
Abstract
A liquid phase etching method which comprises spraying a chemically reactive liquid, with a specific speed, to a solid article, an aggregate of solid articles or a gelatinous material to be treated; and a liquid etching apparatus having a mechanism for holding a processing object to be treated and a nozzle structure for spraying a chemically reactive liquid to the processing object to be treated which is held by the mechanism. The method and apparatus allow the significant improvement of the etching rate while maintaining the accuracy of etching.
Description
Technical field
The present invention relates to object being treated surfaces such as solid carry out in the machining technology, with the field that forms trickle shape in, the manufacturing of for example semiconductor device, MEMS (Micro-Electro-Mechanical-system: microelectromechanical systems) relevant liquid phase engraving method and liquid phase Etaching device such as equipment.
Background technology
In semi-conductive processing (etching) operation as the typical example of trickle processing, reactive gas forms plasmoid and shines semiconductor surface, and semiconductor machining is become desirable shape.
With reference to Fig. 9 simple declaration, on vacuum chamber 1, be connected with and be used to form the vacuum pump 2 that vacuum is used.Mounting object being treated silicon (シ リ コ Application ウ エ one Ha) 3 for example in vacuum chamber 1, import desirable gas after, produce plasma 4, with the object being treated surface interaction, object being treated is handled.Etching object being treated in Fig. 9.
In addition, open shown in the flat 9-27654 communique as the spy, existing etching is immersed solid sample in the liquid mostly and is handled.But though the etching in the liquid is very fast on etched processing speed, the problem that exists etch isotropy to carry out is unsuitable for trickle processing.
It is to make etched anisotropy become possibility for the high-precision requirement of satisfying granular processing that isoionic reason is used in etching.
But, use plasma in the etching, can be cost to sacrifice process velocity.Its result, in the semiconductor industry field, typically, processing a slice chip need spend the time about 10 minutes.
Summary of the invention
Engraving method of the present invention to as the solid of object being treated or the aggregate or the gelatinous object of solid, blows attached chemical reactivity liquid with fixing speed and carries out etching.
Engraving method of the present invention, use nozzle mechanism to blow attached chemical reactivity liquid to the object being treated that is arranged in the vacuum tank, wherein, the degree of the described vacuum of processing during object being treated forms and is enough to prevent to surpass the velocity of sound when liquid is injected and produces the vacuum degree of shock wave etc.
Engraving method of the present invention applies electric charge to the particle of the liquid that blows out, utilizes electric field or magnetic field, make charged liquid particle to as the aggregate or the gelatinous object surfaces of the described solid of processing object thing or solid, quicken to lure and draw and impact.
Engraving method of the present invention, the surface of a part that covers the aggregate of solid or solid with resin material etc. forms mask, and the part of exposing from mask is blown attached chemical reactivity liquid and the aggregate of selectivity processing solid or solid.
Etaching device of the present invention has mechanism that keeps object being treated and the nozzle arrangements that is used for maintained object being treated is blown attached chemical reactivity liquid.
Liquid phase engraving method of the application of the invention and liquid phase Etaching device can make etching speed increase substantially.
Description of drawings
Fig. 1 is the constructed profile of the liquid phase Etaching device of embodiment of the present invention;
Fig. 2 A～2D is the process chart of other treatment process of expression embodiment of the present invention;
Fig. 3 A～3C is the process chart of other treatment process of expression embodiment of the present invention;
Fig. 4 is the constructed profile of the liquid phase Etaching device of embodiment of the present invention;
Fig. 5 is the constructed profile of another liquid phase Etaching device of embodiment of the present invention;
Fig. 6 is the constructed profile of another liquid phase Etaching device of embodiment of the present invention;
Fig. 7 is the constructed profile of a liquid phase Etaching device again of embodiment of the present invention;
Fig. 8 is the constructed profile of a liquid phase Etaching device again of embodiment of the present invention;
Fig. 9 is the section of structure of existing plasma etching apparatus.
Embodiment
The technology that the present invention blows the attached liquid body based on high speed to object being treated, can satisfy this two characteristics simultaneously: promptly, (1), use liquid and the high-rate etching that obtains; (2), use plasma and the anisotropic etching that obtains, and can high speed processing, guarantee very strong anisotropy.
In the system that liquid is collided with ultrahigh speed, also have when drop collides in the isoionic effect of extremely surface generation of object being treated, can bring into play feature of the present invention more significantly.
The present invention can convert use isoionic existing " etching work procedure " to the processing of the high liquid phase of disposal ability, its result, and productivity is brought up to tens times from several times.Need in the semiconductor industry manufacturing installation is dropped into huge investment.Be difficult to obtain the chip unit price that matches with this investment, it is also very difficult that corresponding so-called silicon reclaims.Therefore,, then can expect productive raising, make the change industrial structure if the etched processing time can be improved tens times.
Following with reference to the description of drawings embodiments of the present invention.In addition, in each figure at the identical symbol of the identical position mark of functional substrate.
(execution mode)
Use embodiment 1 explanation one embodiment of the invention.Fig. 1 is the diagram that the liquid phase Etaching device that uses in the execution mode is described.Below, the summary of the Etaching device of embodiment 1 is described with reference to Fig. 1.On vacuum chamber 10, be connected with the vacuum pump 20 that is used to form vacuum.In vacuum chamber 10, be provided with and keep platform 40 and a plurality of nozzle 50.Keep platform 40 can keep object being treateds 30 such as the aggregate of solid or solid or gelatinous object.Nozzle 50 is connected with the fluid Supplying apparatus 60 of supplying with desirable liquid, can make chemically reactive liquid 70 blow attached with the particle shape to object being treated 30.From carrying out selecting the etched various liquid 70 to use the solvent that is suitable for each object being treated to object being treated 30.
Vacuum tank is remained the approximately vacuum degree (that is, low-pressure) higher than 1E-3Torr, blow attached liquid body 70 from nozzle 50 with speed more than or equal to speed per hour 1000km.Blown attached liquid 70 and carried out etching attached to time on the object being treated surface 31.
Under the not good situation of the wetability of the liquid 70 on object being treated surface 31, blow attached interfacial agent to the object being treated surface from the portion that blows out 81 of interfacial activity agent feeding device 80.Blowing attached can carrying out also can carry out simultaneously before blowing attached liquid body 70 of interfacial agent perhaps carried out after blowing attached liquid body 70 immediately.Owing to there is interfacial agent, liquid 70 spreads all over object being treated surface 31, carries out etching equably.
As an example, when liquid 70 accelerated to and arrives object being treated 30 more than or equal to the speed of speed per hour 10,000 kms, the liquid of a part became and obtains high-energy and plasma.The plasma that produces has the object being treated of making surface 31 activates, further quickens the effect of etch processes speed.
At this, the corrosion resistance of nozzle 50 is described.
The material that is used to make nozzle is not necessarily limited to the material of excellent corrosion resistance.When using the made nozzle of corrosion resistance deficiency, use to be applicable to that the nozzle substances processed forms the parent shape of nozzle, must cover the surface that directly contacts with liquid with etching by the material of corrosion resistance.This covering processing is that the plasma based on desirable corrosion resistance material is directly shone to nozzle surface, and the plasma that perhaps will generate the material with corrosion resistance with the substance reaction of parent shines nozzle surface.By covering the corrosion resistance material, can increase substantially corrosion resistance to the etching solution that uses at nozzle surface.
Next use other treatment process of embodiment 2 explanation embodiment of the present invention.Fig. 2 A～2D, Fig. 3 A～3C and Fig. 4 illustrate embodiment 2.Fig. 2 A～2D be expression embodiment 2 be the process chart of mask and the processing when using semiconductor with the photoresist as object being treated, Fig. 3 A～3D be expression embodiment 2 be the process chart of mask and the processing when using semiconductor with the covering material as object being treated, Fig. 4 is the diagram of the use semiconductor of explanation embodiment 2 Etaching device during as object being treated.
Below, as an example of object being treated 30 being implemented microfabrication, the course of processing of semiconductor device foremost is described in the microfabrication.
In semi-conductive processing in 2002, also want the processing of superfine to popularize than 0.25 micron.Therefore, this being carried out the atomic size of the liquid 70 of etch processes must be less than 0.2 micron.In addition, atomic size needs only the principal element (critical dimension) less than the size of decision processing object, therefore, if need machining accuracy big, then can select the size with the corresponding particle of this machining accuracy.In embodiment 2, use to have the Etaching device that is used to form less than 0.2 micron atomic nozzle 50 or the superonic flow nozzzle (Supersonic Nozzle) 51 that is used to form liquid particle more at a high speed as shown in Figure 4.In addition, in the present invention, superonic flow nozzzle is to blow attached liquid body particulate more than or equal to the speed of speed per hour 1000km.It is desirable to more, liquid particle is accelerated to blow attached more than or equal to the speed of speed per hour 3000km.
Semiconductor substrate with reference to Fig. 2 explanation becoming processing object.As an example of semiconductor substrate, the silicon 90 of the film 100 of the material of necessity when this uses formation to have the formation semiconductor element.The semiconductor substrate of processing object is silicon substrate or the silicon substrate that is formed with metal films such as silicon oxide film, silicon nitride film, terres rares oxide-film, aluminium or copper etc.
Liquid to the film 100 that is used for the etching processed material has carried out various researchs, selects the solvent of the material of the semiconductor substrate that is suitable for processing object for use.
Vacuum degree in the vacuum chamber 10 remains on the vacuum degree that is higher than about 1E-3Torr, blows attached liquid body 70 with the speed more than or equal to the about 1000km of speed per hour from nozzle 50.Blown attached liquid and carried out etching attached to time on the object being treated surface 31.Based on the relation of object being treated surface 31 and liquid 70, by utilizing interfacial agent, thereby make liquid spread all over object being treated surface 31, to uniform etching performance effect.When the wetability of the liquid 70 on object being treated surface 31 is not good, by attached interfacial agent is blown on non-handled thing surface, make liquid 70 spread all over the whole surperficial 31 of object being treated, etching is even.
As an example, if liquid 70 is with the speed arrival object being treated of speed per hour above about 10,000 kms, and then Yi Bufen liquid component can obtain high-energy and plasma.The plasma of Chan Shenging has the effect that makes the object being treated surface activation and further improve etching speed like this.
When making semiconductor device, existence must be with the situation of processing than 0.25 micron 0.1 micron trickleer size.At this moment, shown in Fig. 2 B, on film 100, form photoresist 110,, can access the processing of desirable pattern and size by so-called photoetching process as mask.At this moment, have the etched corrosion resistance of liquid phase, shown in Fig. 2 B, preferably in advance plasma treatment is carried out on the surface of photoresist 110 with plasma 120 in order to make photoresist.
The surface of the photoresist that is made of organic substance with plasma treatment, then organic polymerization reaction etc. takes place in its surface.It is crosslinked etc. by this reaction organic substance surface to be taken place, and thus, shown in Fig. 2 C, can access the photoresist 111 of corrosion resistance.Plasma 120 can consider rare gas isoionic situation, with the interaction of the material that constitutes photoresist 110 and with the interaction of the etching solution 70 of the solvent that uses and acid, alkali etc., the plasma that decision is best.
By the combination of etching solutions 70 such as employed solvent and acid, alkali, in any case the situation of sufficient corrosion resistance in the photoresist 110 that mainly constitutes, can occur to obtain by organic substance.
At this moment, as shown in Figure 3, will be covered the surface of object being treated 100 by the covering material 130 that the material with enough corrosion resistances constitutes, be that mask is implemented the liquid phase etching with this covering material 130.In addition, in embodiment 2, object being treated is equivalent to be formed on the film 100 on silicon substrate 90 surfaces.
At first, use with photoresist 110 to be mask, etching solutions 70 such as solvent that use can etching covering material 130 and acid, alkali carry out etching to covering material 130.
Afterwards, be mask with the covering material behind the composition 131, as shown in Figure 4, in vacuum chamber 10, blow attached solvent and the etching solutions 70 such as acid, alkali that are used for etching object being treated 100 from superonic flow nozzzle 51, object being treated 100 is carried out the liquid phase etching, implement desirable processing.In addition, the vacuum degrees in the vacuum chamber 10 remain on the vacuum degree (that is, low-pressure) that is higher than 1E-3Torr, from superonic flow nozzzle 51 to blow attached liquid body 70 more than or equal to the speed of speed per hour 1000km.Above-mentioned such maintenance vacuum degree is to produce shock wave etc. in order to prevent above-mentioned chemical reactivity liquid from surpassing the velocity of sound when being sprayed by spray.
According to the method for above explanation, get the processing film of semiconductor substrate and processing object extremely trickle according to mask pattern.
Then, use another treatment process of embodiment 3 explanation embodiment of the present invention.In manufacturing that requires precision machined semiconductor equipment etc., the formation of extension of etching bath (over hang) and tapered portion (テ one パ) makes the machining accuracy variation.Therefore, the engraving method of groove is vertically excavated in strong request from the surface of solids on plane.
In embodiment 3, use Fig. 5 and Fig. 6 explanation when etch processes, to utilize the vertically etching work procedure of grooving of electric field or magnetic field.
Fig. 5 is applying electric field and make the diagram of the Etaching device that liquid 70 quickens on object being treated of the explanation embodiment of the invention 3; Fig. 6 be the explanation embodiment of the invention 3 on vacuum chamber, apply the Etaching device of liquid 70 is quickened in magnetic field along direction of rotation diagram.
As shown in Figure 5, near the outlet of nozzle 50 or outlet, electric charge mechanism 140 is set, on the liquid (liquid particle promptly) 70 of the corpusculed that penetrates, applies electric charge.Utilize this electric charge freely to give directivity at the liquid 70 of the corpusculed that penetrates.Therefore, has the voltage applying mechanism 150 that can on the maintenance platform that keeps the semiconductor solid, apply voltage.
From the liquid 70 that nozzle 50 blows out, at first give electric charge by electric charge mechanism 140, be accelerated by voltage applying mechanism 150, arrive object being treated 30.The voltage that can apply on the structure of device and the electrical characteristic of employed liquid owing to discharge or electric leakage etc. is restricted.About this problem, hereinafter describe with embodiment 5, by intermittently carrying out voltage application with the system in combination that promotes employed liquid gasification in the etching, thus the influence that prevents to leak electricity etc.
In addition, as shown in Figure 6, also can apply the magnetic field applying mechanism 160 in magnetic field, quicken liquid 71, the track of motion is changed along direction of rotation by use, freely controlling party to.In addition, Reference numeral 71 is the liquid that makes the track rotation.
In addition, use another treatment process of embodiment 4 explanation embodiments of the present invention.Even the nozzle of atomizing of liquids 50 has only one also to can be used in etch processes.As the constant areas of maintenance such as solid of object being treated, so under the situation of having only single nozzle, according to the incident angle of processed place change to the liquid particle sub-surface of granular.It is the equal development of situation that shows different illumination with the plane with spot light owing to the place is different.Therefore, in order to handle uniformly on the whole surface of object being treated, it is effective using a plurality of nozzles.So explanation has the example of a plurality of nozzles in embodiment 4.
Fig. 7 is that the Etaching device of the explanation embodiment of the invention 4 is the diagram that each semiconductor chip is provided with structure of nozzle.Fig. 8 is that the MEMS that utilizes of the explanation embodiment of the invention 4 is provided with the diagram of the Etaching device of countless micro nozzles.
For example, in the manufacturing process of Si semiconductor, form a plurality of chips 170 with the interval about about 1cm.As shown in Figure 7, by the nozzle 50 consistent with the top position of each chip 170 is set, the angles shifts of liquid 70 can be constrained to irreducible minimum.In addition, also can a plurality of nozzles be set, further reduce the influence that angle changes each chip.
In addition, as shown in Figure 8, for example, can utilize the micro nozzle 52 of using MEMS and trickle processing, be spaced nozzle with several microns.At this moment, can carry out etching, and can make nozzle self or object being treated move the whole face in object being treated surface is carried out etching by the nozzle of constant area is set corresponding on whole of the surface area of object being treated nozzle being set.In addition, in Fig. 8, be used for explanation each nozzle is amplified expression.
In addition, use another treatment process of embodiment 5 explanation embodiment of the present invention.According to the characteristic of etching solutions such as the solvent that uses in the liquid phase etching and acid, alkali, change the time of the liquid of etching use until gasification in vacuum chamber 10.
When gasification rate is very fast, blown attached liquid through regulation gasification immediately after the necessary time of etching, so do not have problems.Yet, when gasification rate is slow, blown that attached liquid surpasses the necessary time of etching and residual, become the reason that causes etch processes bad.Therefore, when gasification rate is slow, must prevent the liquid oversupply with the amount of blowing out of liquid by the control etching.For addressing this problem, it is desirable to, fluid Supplying apparatus 60 has and intermittently blows out loop or blowing out device (not shown) intermittently, by blowing out liquid from nozzle off and on, the needed time band of the liquid evaporation of supplying with to etching in case blow out is set.
In the above embodiment, blow attached chemical reactivity liquid and it is desirable to carry out, but also can be the speed that makes a part of liquid component or most of liquid component plasma with supersonic speed.
Utilizability on the industry
The present invention described above provides at a high speed object being treated is blown the liquid phase of the liquid that attached etching uses Engraving method can be kept the trickle processing characteristicies such as anisotropy that dry-etching has, and energy Enough increase substantially etching speed.
Claims (13)
1. liquid phase engraving method, it comprises: utilize nozzle mechanism, object being treated is blown the operation of attached chemical reactivity liquid and utilize with fixing speed and blown attached described liquid described object being treated is carried out etched operation, it is characterized in that, describedly blow attached operation and in the vacuum environment of the high vacuum that is higher than 1E-3Torr, carry out, can prevent that described liquid from surpassing the velocity of sound and producing shock wave when injected.
2. liquid phase engraving method as claimed in claim 1 is characterized in that, described to blow attached operation be to blow attached operation as described liquid to object being treated than the little liquid particle of critical dimension size.
3. liquid phase engraving method as claimed in claim 1, it is characterized in that, describedly blow attached operation and comprise described liquid particle is applied the operation of electric charge and to the described charged liquid particle effect electric field or the operation in magnetic field, thereby described liquid particle quickened to lure to the surface of described object to be drawn and impact.
4. liquid phase engraving method as claimed in claim 1, it is characterized in that, described blow attached operation before, have the operation that covers the part of described object being treated by cladding material, in described etching work procedure, described liquid is the part that is not capped of the described object being treated of etching only.
5. liquid phase engraving method as claimed in claim 1, it is characterized in that, described blow attached operation before, have the operation of making the film of the material with enough corrosion resistances on described object being treated surface successively, covered the part of described film and be the operation of the described film of mask etching with described cladding material by cladding material, described etching work procedure is to be that mask carries out etched operation to described object being treated with etched described film.
6. liquid phase engraving method as claimed in claim 1 is characterized in that, describedly blows attached operation and is and the attached while of blowing of described liquid or the operation of attached interfacial activity material is blown on described processing object thing surface before and after it.
7. liquid phase engraving method as claimed in claim 1 is characterized in that, describedly blows attached operation and is to use described nozzle mechanism to blow the operation of attached described liquid off and on.
8. liquid phase engraving method as claimed in claim 7, it is characterized in that, describedly blow attached operation and decide the time interval of intermittently blowing attached described liquid according to the speed of the described object being treated of described liquid etching and the gasification rate or the eliminating speed that contain in the described vacuum environment of described liquid of the etched material after etching finishes.
9. liquid phase Etaching device, it has vacuum chamber, be configured in the described vacuum chamber and object being treated is blown the nozzle mechanism of attached chemical reactivity liquid under vacuum environment, it is characterized in that, at least described nozzle mechanism carries out corrosion resistance to be handled, the exposed division that described corrosion resistance is handled at described nozzle mechanism forms the film that described liquid is had the material of corrosion resistance, this processing is to use isoionic surface treatment, and described vacuum environment is the high vacuum environment that is higher than 1E-3Torr.
10. liquid phase Etaching device as claimed in claim 9, it is characterized in that, also have the maintenance platform of described object being treated, the electric charge mechanism of outlet that is located at described nozzle mechanism and the voltage applying mechanism that described maintenance platform is applied voltage, described electric charge mechanism can give electric charge to the particle of the described liquid that is blown, and described voltage applying mechanism can make the described liquid particle that is endowed electric charge quicken.
11. liquid phase Etaching device as claimed in claim 9 is characterized in that, also has the magnetic field applying mechanism, described magnetic field applying mechanism can be controlled the track of described liquid particle.
12. liquid phase Etaching device as claimed in claim 9 is characterized in that, also has fluid Supplying apparatus, described fluid Supplying apparatus is supplied with described liquid continuously or off and on to described nozzle mechanism.
13. liquid phase Etaching device as claimed in claim 9, it is characterized in that, also have the interfacial agent feed mechanism, described interfacial agent feed mechanism has to described object being treated and blows the portion that blows out of attached interfacial agent and supply with the feedway of described interfacial agent to the described portion of blowing out.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP044550/2003 | 2003-02-21 | ||
| JP2003044550 | 2003-02-21 |
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| Publication Number | Publication Date |
|---|---|
| CN1751383A CN1751383A (en) | 2006-03-22 |
| CN100370588C true CN100370588C (en) | 2008-02-20 |
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| Application Number | Title | Priority Date | Filing Date |
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| CNB2004800041468A Expired - Fee Related CN100370588C (en) | 2003-02-21 | 2004-02-23 | Method and apparatus for liquid etching |
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|---|---|
| US (2) | US7378031B2 (en) |
| JP (2) | JP4680058B2 (en) |
| CN (1) | CN100370588C (en) |
| TW (1) | TW200425327A (en) |
| WO (1) | WO2004075278A1 (en) |
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| US8177993B2 (en) * | 2006-11-05 | 2012-05-15 | Globalfoundries Singapore Pte Ltd | Apparatus and methods for cleaning and drying of wafers |
| JP5592083B2 (en) * | 2009-06-12 | 2014-09-17 | アイメック | Substrate processing method and semiconductor device manufacturing method using the same |
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| CN104064638B (en) * | 2014-06-26 | 2017-12-15 | 圆融光电科技有限公司 | The method of roughening and vacuum equipment of LED transparency conducting layers |
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- 2004-02-23 WO PCT/JP2004/002073 patent/WO2004075278A1/en active Search and Examination
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Also Published As
| Publication number | Publication date |
|---|---|
| JP4680058B2 (en) | 2011-05-11 |
| WO2004075278A9 (en) | 2005-05-26 |
| US7378031B2 (en) | 2008-05-27 |
| JP4845936B2 (en) | 2011-12-28 |
| JPWO2004075278A1 (en) | 2006-06-01 |
| TWI315085B (en) | 2009-09-21 |
| TW200425327A (en) | 2004-11-16 |
| WO2004075278A1 (en) | 2004-09-02 |
| US20080196834A1 (en) | 2008-08-21 |
| US20060049140A1 (en) | 2006-03-09 |
| CN1751383A (en) | 2006-03-22 |
| JP2008294461A (en) | 2008-12-04 |
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