CN100369279C - Bridge N-electrode type gallium nitride base large tube core LED and preparation method - Google Patents
Bridge N-electrode type gallium nitride base large tube core LED and preparation method Download PDFInfo
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- CN100369279C CN100369279C CNB2005100118127A CN200510011812A CN100369279C CN 100369279 C CN100369279 C CN 100369279C CN B2005100118127 A CNB2005100118127 A CN B2005100118127A CN 200510011812 A CN200510011812 A CN 200510011812A CN 100369279 C CN100369279 C CN 100369279C
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Abstract
The present invention relates to a bridge type N-electrode type gallium nitride based LED with a large tube core and a preparation method thereof, wherein the bridge type N-electrode type gallium nitride based LED with a large tube core can solve the light loss between the edges of a P-electrode and an N-electrode. The present invention has the structure that a dissimilar material or a sapphire substrate with double-burnishing face grows the multilayer material structure of the gallium nitride based LED by the metallorganic chemical vapour deposition growth technique, and is prepared by the steps of photo etching, deposition, etching, evaporation, peeling, etc. The present invention comprises at least one piece-shaped P-electrode and at least two N-electrodes deposited on gallium nitride based substrates, a bar-shaped insulating medium layer deposited between the punctiform N-electrode, and a metal refliction film layer, wherein the N-electrodes are a plurality of punctiform N-electrodes which form a punctiform and are distributed between the piece-shaped P-electrodes, and the metal reflection film layer is coated on the bar-shaped insulating medium layer by vaporization and is connected with the corresponding N-electrode. The present invention can increases the area of the P-type region, reduce the current density, improve the internal and the external quantum efficiency, make the chip have higher saturation current, and largely improve the luminous efficiency of an inverted welded LED chip.
Description
Technical field
The present invention relates to a kind of bridge N-electrode type gallium nitride base large tube core light-emitting diode (bridge N-electrode type GaN base large tube core LED) and preparation method.
Background technology
In field of semiconductor illumination, light loss on non-light exit side face is one of flip chip bonding led chip luminous efficiency problem of being difficult to improve by a larger margin always, the gallium nitride-based compound semiconductor material has the broad stopband direct band gap, can be used for making green glow, blue light and ultraviolet leds, on the basis of common LED, by increasing die-size, promptly so-called big tube core LED, can improve luminous power, simultaneously in order further to improve luminous power and to help the device heat radiation, usually adopt face-down bonding technique, make gallium nitride base large tube core LED flip chip bonding on silicon chip, the light that produces brings out light from two throwing surface sapphires, and light has lost at the non-light output end towards silicon chip but have greatly, thereby has limited the raising of GaN base large tube core LED luminous power.The present invention adopts N electrode multiple spot bridge-type to connect, and has effectively reduced the PN junction edge length that forms between N, P electrode, has increased P type luminous zone area, has reduced the PN junction current density; Utilized the light reflection in electrode edge zone simultaneously, this makes the LED light extraction efficiency improve greatly.
Summary of the invention
The objective of the invention is to overcome the above-mentioned defective of light-emitting diode of the prior art, and provide a kind of bridge N-electrode type gallium nitride base large tube core light-emitting diode and preparation method, can improve the inside and outside quantum efficiency of GaN base flip chip bonding led chip, its luminous efficiency is improved.
Technical scheme of the present invention is as follows:
Bridge N-electrode type gallium nitride base large tube core light-emitting diode provided by the invention comprises:
One gallium nitrate based substrate;
Be deposited on described gallium nitrate based on-chip at least one sheet P electrode and at least two N electrodes; It is characterized in that described N electrode is to be a plurality of point-like N electrodes of spot distribution within sheet P electrode both sides and sheet P electrode;
Be deposited on the strip insulating medium layer between the described point-like N electrode;
And the metallic reflection thin layer (be bridge N-electrode) of evaporation on described strip insulating medium layer.
Described insulating medium layer is inorganic medium layer or organic dielectric layer, and its thickness is 20-3000nm.Described inorganic medium layer is silica, silicon nitride or alumina medium layer.Described organic dielectric layer is that polyamides is pressed amine or photoresist dielectric layer.
Described metallic reflection thin layer is a single or multiple lift metallic reflection thin layer; Its thickness is 10-3000nm.The material of described metallic reflection thin layer can be TiAu, NiAu, TiAl, TiAg or NiAg.
The preparation method of bridge N-electrode type gallium nitride base large tube core light-emitting diode provided by the invention, step is as follows:
(1) make GaN base large tube core LED substrate,
(2) deposit a slice shape P electrode and at least two N electrodes at least on GaN base large tube core LED substrate, described N electrode is to be a plurality of point-like N electrodes of spot distribution within sheet P electrode both sides and sheet P electrode;
(3) deposit one layer thickness is the insulating medium layer of 20-3000nm between the N electrode;
(4) again on insulating medium layer evaporation thickness be the metallic reflection thin layer of 10-3000nm.
Described insulating medium layer is the inorganic medium layer or is organic dielectric layer.Described inorganic medium layer is silica, silicon nitride or alumina medium layer.Described organic dielectric layer is polyimides or photoresist dielectric layer.
Described metallic reflection thin layer is a single or multiple lift metallic reflection thin layer.The material of described metallic reflection thin layer is TiAu, NiAu, TiAl, TiAg or NiAg.
Description of drawings
Accompanying drawing 1 is a structural representation of the present invention;
Accompanying drawing 2-4 is the schematic diagram of the preparation process of bridge N-electrode type gallium nitride base large tube core light-emitting diode of the present invention.
---P N electrode---N wherein: the P electrode
Gallium nitrate based substrate---11 insulating medium layers---2 metallic reflector---3
P type Doped GaN---p-GaN n type Doped GaN---n-GaN
Embodiment
Accompanying drawing 1 is bridge N-electrode type gallium nitride base large tube core light-emitting diode structure schematic diagram of the present invention, and as seen from the figure, bridge N-electrode type gallium nitride base large tube core light-emitting diode provided by the invention comprises:
One gallium nitrate based substrate 11;
Be deposited at least one sheet P electrode and at least two N electrodes on the described gallium nitrate based substrate 11; Described N electrode is to be a plurality of point-like N electrodes of spot distribution within sheet P electrode both sides and sheet P electrode;
Be deposited on the strip insulating medium layer 2 between the described point-like N electrode;
And the metallic reflection thin layer 3 of evaporation on described insulating medium layer 2.
Described strip insulating medium layer 2 is inorganic medium layer or organic dielectric layer, and its thickness is 20-3000nm.Described inorganic medium layer is silica, silicon nitride or alumina medium layer.Described organic dielectric layer is that polyamides is pressed amine or photoresist dielectric layer.
Described metallic reflection thin layer 3 is a single or multiple lift metallic reflection thin layer; Its thickness is 10-3000nm.The material of described metallic reflection thin layer 3 can be TiAu, NiAu, TiAl, TiAg or NiAg.
Embodiment 1
Use preparation method of the present invention to prepare a bridge N-electrode type gallium nitride base large tube core light-emitting diode, its preparation process is as follows:
(1) make GaN base large tube core LED substrate 11,
(2) at deposit one sheet P electrode (being prepared in p type Doped GaN surface) on the GaN base large tube core LED substrate be a plurality of point-like N electrodes (be prepared in n type Doped GaN surface) of spot distribution within sheet P electrode both sides and sheet P electrode, as shown in Figure 2;
(3) deposit one layer thickness is the SiO of 200nm between the N electrode
2Insulating medium layer 2, as shown in Figure 3;
(4) again at SiO
2Evaporation thickness is the individual layer Al metallic reflection thin layer 3 of 300nm on the insulating medium layer 2, as shown in Figure 4; This Al metallic reflection thin layer 3 is connected with the N electrode, as shown in Figure 1.
Use preparation method of the present invention to prepare a bridge N-electrode type gallium nitride base large tube core light-emitting diode, its preparation process is as follows:
(1) make GaN base large tube core LED substrate 11,
(2) at deposit one sheet P electrode (being prepared in p type Doped GaN surface) on the GaN base large tube core LED substrate be a plurality of point-like N electrodes (be prepared in n type Doped GaN surface) of spot distribution within sheet P electrode both sides and sheet P electrode, as shown in Figure 2;
(3) deposit one layer thickness is the strip insulating silicon nitride dielectric layer 2 of 300nm between the N electrode, as shown in Figure 3;
(4) again on strip insulating silicon nitride dielectric layer 2 evaporation thickness be the NiAg metallic reflection thin layer 3 of 100nm, as shown in Figure 4; This NiAg metallic reflection thin layer 3 is connected with corresponding N electrode.
Use preparation method of the present invention to prepare a bridge N-electrode type gallium nitride base large tube core light-emitting diode, its preparation process is as follows:
(1) make GaN base large tube core LED substrate 11,
(2) at deposit one sheet P electrode (being prepared in p type Doped GaN surface) on the GaN base large tube core LED substrate be a plurality of point-like N electrodes (be prepared in n type Doped GaN surface) of spot distribution within sheet P electrode both sides and sheet P electrode, as shown in Figure 2;
(3) deposit one layer thickness is the strip alumina insulation dielectric layer 2 of 100nm between the N electrode, as shown in Figure 3;
(4) again on strip alumina insulation dielectric layer 2 evaporation thickness be the NiAu metallic reflection thin layer 3 of 200nm, as shown in Figure 2; This NiAu metallic reflection thin layer 3 is connected with corresponding N electrode.
Embodiment 4
Use preparation method of the present invention to prepare a bridge N-electrode type gallium nitride base large tube core light-emitting diode, its preparation process is as follows:
(1) make GaN base large tube core LED substrate 11,
(2) at deposit one sheet P electrode (being prepared in p type Doped GaN surface) on the GaN base large tube core LED substrate be a plurality of point-like N electrodes (be prepared in n type Doped GaN surface) of spot distribution within sheet P electrode both sides and sheet P electrode, as shown in Figure 2;
(3) deposit one layer thickness is the strip photoresist insulating medium layer 2 (this strip insulating medium layer also can be the polyimide insulative dielectric layer) of 2000nm between the N electrode, as shown in Figure 3;
(4) again on strip photoresist insulating medium layer 2 evaporation thickness be the TiAu metallic reflection thin layer 3 of 300nm, as shown in Figure 4; This TiAu metallic reflection thin layer 3 is connected with corresponding N electrode.
Claims (12)
1. bridge N-electrode type gallium nitride base large tube core light-emitting diode comprises:
One gallium nitrate based substrate;
Be deposited on described gallium nitrate based on-chip at least one sheet P electrode and at least two N electrodes; It is characterized in that described N electrode is to be a plurality of point-like N electrodes of spot distribution within sheet P electrode both sides and sheet P electrode;
Be deposited on the strip insulating medium layer between the described point-like N electrode; And evaporation is on described strip insulating medium layer, and the metallic reflection thin layer that is connected with corresponding N electrode.
2. by the described bridge N-electrode type gallium nitride base large tube core light-emitting diode of claim 1, it is characterized in that described insulating medium layer is inorganic medium layer or organic dielectric layer, its thickness is 20-3000nm.
3. by the described bridge N-electrode type gallium nitride base large tube core light-emitting diode of claim 2, it is characterized in that described inorganic medium layer is silica, silicon nitride or alumina medium layer.
4. by the described bridge N-electrode type gallium nitride base large tube core light-emitting diode of claim 2, it is characterized in that described organic dielectric layer is that polyamides is pressed amine or photoresist dielectric layer.
5. by the described bridge N-electrode type gallium nitride base large tube core light-emitting diode of claim 1, it is characterized in that described metallic reflection thin layer is a single or multiple lift metallic reflection thin layer; Its thickness is 10-3000nm.
6. by the described bridge N-electrode type gallium nitride base large tube core light-emitting diode of claim 5, it is characterized in that the material of described metallic reflection thin layer is TiAu, NiAu, TiAl, TiAg or NiAg.
7. the preparation method of the described bridge N-electrode type gallium nitride base large tube core light-emitting diode of claim 1, step is as follows:
(1) make GaN base large tube core LED substrate,
(2) deposit a slice shape P electrode and at least two N electrodes at least on GaN base large tube core LED substrate, described N electrode is to be a plurality of point-like N electrodes of spot distribution within sheet P electrode both sides and sheet P electrode;
(3) deposit one layer thickness is the insulating medium layer of 20-3000nm between the N electrode;
(4) again on insulating medium layer evaporation thickness be 10-3000nm, and the metallic reflection thin layer that is connected with corresponding N electrode.
8. by the preparation method of the described bridge N-electrode type gallium nitride base large tube core light-emitting diode of claim 7, it is characterized in that described insulating medium layer is the inorganic medium layer or is organic dielectric layer.
9. by the preparation method of the described bridge N-electrode type gallium nitride base large tube core light-emitting diode of claim 8, it is characterized in that described inorganic medium layer is silica, silicon nitride or alumina medium layer.
10. by the preparation method of the described bridge N-electrode type gallium nitride base large tube core light-emitting diode of claim 8, it is characterized in that described organic dielectric layer is polyimides or photoresist dielectric layer.
11. the preparation method by the described bridge N-electrode type gallium nitride base large tube core light-emitting diode of claim 7 is characterized in that described metallic reflection thin layer is a single or multiple lift metallic reflection thin layer.
12. the preparation method by the described bridge N-electrode type gallium nitride base large tube core light-emitting diode of claim 11 is characterized in that the material of described metallic reflection thin layer is TiAu, NiAu, TiAl, TiAg or NiAg.
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| CNB2005100118127A CN100369279C (en) | 2005-05-27 | 2005-05-27 | Bridge N-electrode type gallium nitride base large tube core LED and preparation method |
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| CN100369279C true CN100369279C (en) | 2008-02-13 |
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| CN102332521A (en) * | 2011-10-19 | 2012-01-25 | 中国科学院物理研究所 | GaN (gallium nitride)-based LED (light-emitting diode) with N-type electrodes in dotted distribution and manufacturing method thereof |
| CN102569583B (en) * | 2011-12-08 | 2015-12-16 | 晶科电子（广州）有限公司 | Based on luminescent device and the manufacture method thereof of ceramic substrate |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003224297A (en) * | 2002-01-30 | 2003-08-08 | Nichia Chem Ind Ltd | Light emitting element |
| JP2004071655A (en) * | 2002-08-01 | 2004-03-04 | Nichia Chem Ind Ltd | Light emitting device |
| JP2005116794A (en) * | 2003-10-08 | 2005-04-28 | Mitsubishi Cable Ind Ltd | Nitride semiconductor light emitting element |
| CN2805099Y (en) * | 2005-05-30 | 2006-08-09 | 中国科学院物理研究所 | Bridge type, N electrode, gallium nitride based macro-tube core LED |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003224297A (en) * | 2002-01-30 | 2003-08-08 | Nichia Chem Ind Ltd | Light emitting element |
| JP2004071655A (en) * | 2002-08-01 | 2004-03-04 | Nichia Chem Ind Ltd | Light emitting device |
| JP2005116794A (en) * | 2003-10-08 | 2005-04-28 | Mitsubishi Cable Ind Ltd | Nitride semiconductor light emitting element |
| CN2805099Y (en) * | 2005-05-30 | 2006-08-09 | 中国科学院物理研究所 | Bridge type, N electrode, gallium nitride based macro-tube core LED |
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