CN100367458C - Heat treatment system and heat treatment method - Google Patents
Heat treatment system and heat treatment method Download PDFInfo
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- CN100367458C CN100367458C CNB028297571A CN02829757A CN100367458C CN 100367458 C CN100367458 C CN 100367458C CN B028297571 A CNB028297571 A CN B028297571A CN 02829757 A CN02829757 A CN 02829757A CN 100367458 C CN100367458 C CN 100367458C
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
Abstract
The present invention relates to a heat treating device which comprises a reaction container, a base plate maintaining tool, a heater and control parts, wherein the reaction container is divided into three regions in an upper direction and a lower direction, the base plate maintaining tool is used for supporting a base plate, and the heater is arranged in the side direction of the reaction container by aiming at each region. Each control part is connected with a temperature detecting part used for detecting the temperature of respectively responsible region, and a temperature detecting part of a middle segment region is also connected with control parts corresponding to an upper segment region and a lower segment region. When the base plate maintaining tool is moved in, the control parts of the upper segment region and the lower segment region use the temperature detection value of the temperature detecting part in the middle segment region as a temperature target value to carry out calculation based on the temperature detection value of the middle segment region, and a control signal of the heater is output.
Description
Technical field
The present invention relates to annealing device and heat treatment method that substrates such as semiconductor wafer are heat-treated.
Background technology
Exist in the manufacture process of semiconductor device usedly, a plurality of semiconductor wafers (hereinafter referred to as wafer) are carried out the film forming processing of CVD (chemical vapour deposition (CVD)) for example or oxidation, the so heat treated vertical heat processing apparatus of DIFFUSION TREATMENT in the lump.This device be many wafer frame shapes remain in the maintenance tool that calls wafer cassette, from for example lower side aforementioned maintenance tool is moved in for example vertical heat-treatment furnace then, processing atmosphere is done into the heating atmosphere of the temperature of regulation, the person of heat-treating.In general heat-treatment furnace is divided into be heated the district a plurality ofly up and down, is taken as and has a plurality of heating units and corresponding to each the formation of temperature control unit, so that can carry out temperature control at each district.
The present inventor has studied and has used carbon wire heater as the sort of vertical heat processing apparatus shown in Fig. 8 of heating unit.Among Fig. 8, label 101 is reaction vessels of lower side opening, is provided with for example to be divided into three sections heater 200 up and down around it.Heater 200 is by the most primary heater 202 of heat hot processing region and be located at its secondary heater 201,203 up and down and constitute.This device, if many wafers being held in the wafer cassette 103 of frame shape is moved in the reaction tube 101 via peristome 102, the lid 104 that then is located at the lower end of this wafer cassette 103 is blocked peristome 102, the heat treatment that is heated to set point of temperature in the reaction tube 101 and stipulates.
In addition, inboard at reaction tube 101, near the position of this external each heater 200 is respectively equipped with internal heat galvanic couple 300 (301～303) and external heat galvanic couple 400 (401～403), so that detect the temperature of the heat-treating atmosphere that each heater 200 is responsible for respectively, constitute being taken at the set control part 500 (501～503) of each heater 200 (201～203) from each thermocouple 300,400 resulting temperature detection value.That is to say that control part 500 (501～503) is based on aforementioned temperature detected value and the temperature objectives value that sets at each section, can carry out independent caloric value control at each heater 200 (201～203) of correspondence.
, when the moving into of wafer cassette 103, near the secondary heater 203 of lower side, be subjected to flow into the influence of the outside atmosphere in the reaction tubes 101, and compare temperature near the primary heater 202 and reduce via peristome 102.If under this situation, move into cold (temperature is lower than the atmosphere in the reaction tube 101) wafer W and wafer cassette 103 from peristome 102, then at first near the temperature the secondary heater 203 further reduce, then along with near near also influenced the rising primary heater 202 of wafer cassette 103 and the secondary heater 201 of upper side and temperature reduction.
Thereby near the past more upper side of temperature the heater 200 is high more, the temperature of wafer W and wafer cassette 103 is heated by heater 200 along with the rising of its position and is raise at leisure in addition, so near the Temperature Distribution of the above-below direction the heater 200 just changes momently according to the position of wafer cassette 103.Therefore so near the temperature the secondary heater 203 of bottom side reduce control part 503 effects because of moving into of wafer cassette 103 sharp so that strengthen input electric power to secondary heater 203.So though near the temperature the primary heater 202 reduces because of the input of wafer cassette 103 but because its degree is so not big less than near the input amount of the electric power of control parts 502 secondary heater 203 in contrast.So the control of the temperature of primary heater 202 is just different mutually with the temperature control of secondary heater 203, and also changes according near its different modes of variation in temperature distribution of the above-below direction the heater 200, and then the variations in temperature in both sides' district influences each other.
The different phenomenon of this temperature state of a control, also produce between the secondary heater 201 of upper end side and primary heater 202, the stabilisation that the result exists near the temperature of each heater 200 after the moving into (charging) and finishing of wafer cassette 103 needs such problem of time.Though after wafer cassette 103 is moved into, make reaction tube 101 inside be warmed up to the predetermined process temperature usually, if the unstable rule of the temperature in the reaction tube 101 is because the stabilisation of the temperature after heating up needs the time, so the final production rate reduces before heating up.
Summary of the invention
The present invention is based on this situation and makes, and it is a kind of when carrying out the heat treatment of substrate in being divided into the heat-treating atmosphere in a plurality of districts that its purpose is to provide, and can make the temperature in each district promptly stable, the technology of seeking the raising of productivity ratio.
The present invention is an annealing device, have: the reaction vessel that is divided into a plurality of districts, the substrate that supports a plurality of substrates and can move in the reaction vessel keeps tool, at the set heating unit in each district, at the set temperature detecting part in each district, and it is set at each district, control the control part of each heating unit independently, it is characterized in that, control part corresponding to a district comprises first operational part: when moving into aforesaid base plate, this first operational part is based on the temperature detection value corresponding to the temperature detecting part in this district, with the temperature detection value corresponding to the temperature detecting part in other districts is that the temperature objectives value is carried out computing, with its operation result as control signal and output corresponding to the heating unit in this district.
The present invention is an annealing device, it is characterized in that, temperature detecting part comprises first temperature detecting part that detects near the temperature the heating unit, is temperature detection values of first temperature detecting part corresponding to the temperature detection value of the temperature detecting part in aforementioned other districts.
The present invention is an annealing device, it is characterized in that, temperature detecting part comprises second temperature detecting part of the temperature in the detection reaction container, is temperature detection values of second temperature detecting part corresponding to the temperature detection value of the temperature detecting part in aforementioned other districts.
The present invention is an annealing device, it is characterized in that, control part corresponding to a district, also comprise second operational part, when the heat treatment substrate, this second operational part carries out computing based on temperature objectives value that sets in this district and temperature detection value corresponding to the temperature detecting part in this district, exports as the control signal corresponding to the heating unit in this district with its operation result.
The present invention is an annealing device, it is characterized in that, temperature detecting part comprises first temperature detecting part that detects near the temperature of heating unit, second temperature detecting part with temperature in the detection reaction container, corresponding to first operational part of the control part in a district when moving into substrate, to carry out computing as the temperature objectives value corresponding to first temperature detecting part in other districts or the temperature detection value of second temperature detecting part, with its operation result as control signal output corresponding to the heating unit in this district, control part corresponding to a district, also comprise second operational part, when the heat treatment substrate, this second operational part based on the temperature objectives value that sets in this district with carry out computing corresponding to first temperature detecting part in this district and each temperature detection value of second temperature detecting part, export as control signal with its operation result corresponding to the heating unit in this district.
The present invention is an annealing device, it is characterized in that, carry out computing corresponding to first operational part of the control part in a district based on the value that obtains correction value with corresponding to the temperature detection value addition of the temperature detecting part in other districts and corresponding to the departure between the temperature detection value of the temperature detecting part in this district, with its operation result as control signal output corresponding to the heating unit in this district.
The present invention is an annealing device, it is characterized in that, the temperature objectives value that sets in a district when the heat treatment substrate corresponding to first operational part of the control part in a district with corresponding to the difference of the temperature objectives value in other districts as correction value.
The present invention is an annealing device, it is characterized in that, carries out computing corresponding to first operational part of the control part in a district based on aforementioned departure being multiply by the value that obtains behind the ratio of regulation.
The present invention is an annealing device, it is characterized in that, reaction vessel constitutes vertical, and substrate keeps tool to move into from the lower side of reaction vessel, be divided at least three sections on the above-below direction in the reaction vessel, an aforementioned district is hypomere district, and aforementioned other districts are the districts except epimere.
The present invention is a heat treatment method, be to keep the substrate that supports a plurality of substrates tool to move in the reaction vessel that is divided into a plurality of districts, by corresponding respectively to each heat treatment method of distinguishing of heating unit heating in aforementioned a plurality of districts, it is characterized in that, comprising: detect operation corresponding to the temperature in each district, with the operation of controlling each heating unit based on the temperature detection value in temperature objectives value and each district, when moving into aforesaid base plate and keep tool, use the heating unit of controlling corresponding to the temperature detection value in other districts corresponding to this district as the temperature objectives value in the district.
The present invention is a heat treatment method, it is characterized in that, when moving into aforesaid base plate and keep tool, the temperature objectives value in district is by obtaining correction value with corresponding to the temperature detection value addition in other districts.
The present invention is a heat treatment method, it is characterized in that, when moving into aforesaid base plate and keep tool, the temperature objectives value that sets in the district during the heat treatment substrate with corresponding to the difference of the temperature objectives value in other districts as correction value.
The present invention is a heat treatment method, it is characterized in that, when moving into aforesaid base plate maintenance tool, when the heating unit of control corresponding to an aforementioned district, resulting value is carried out computing after multiply by a departure based on ratio that will regulation, the temperature objectives value that this departure is meant the temperature detection value in this district, obtain corresponding to the temperature detection value in other districts with basis or add departure between the value that obtains after the temperature objectives value of correction value.
If use the present invention, then because when substrate is moved into reaction vessel, the temperature control in other districts is followed the tracks of in the control of the temperature in a district, so after moving into substrate, the temperature in the reaction vessel is promptly stable.If for example make the temperature in the reaction vessel be warmed up to treatment temperature thereafter, then promptly be stable at treatment temperature.Moreover the temperature in each district of the present invention also can apply to substrate and move into the time each identical occasion of temperature of distinguishing when handling.
Description of drawings
Fig. 1 is the longitudinal section of expression according to the execution mode of annealing device of the present invention.
Fig. 2 is the block diagram at employed control part and related position thereof in the expression present embodiment.
Fig. 3 is the block diagram that expression is located at the inside formation of first operational part in the aforementioned control part.
Fig. 4 is the block diagram that expression is located at the inside formation of second operational part in the aforementioned control part.
Fig. 5 is the Action Specification figure of the relation of lasting the operational part that changes and use of the temperature in the expression present embodiment.
Fig. 6 is the Action Specification figure that is used for illustrating the effect in aforementioned first operational part.
Fig. 7 is the performance plot of situation of the variations in temperature at each the external heat galvanic couple place of expression wafer cassette when moving into.
Fig. 8 is the longitudinal section of the general structure of the existing annealing device of expression.
Embodiment
Fig. 1 is the overall pie graph that the present invention is applied to the execution mode of vertical heat processing apparatus.The overall formation of a vertical heat processing apparatus is described simply at first at this point, and this device has for example reaction tube 1 of the dual structure of quartzy system that the outer tube 1b by the interior pipe 1a of for example both ends open and upper end closed forms.Above-below direction is divided into three district Z in the reaction tube 1
1, Z
2, Z
3The insulator 21 of tubular is fixedly arranged at matrix 22 around reaction tube 1, is provided with heater 3 and the ceiling heater 31 for example be made up of resistance heater as heating unit in the inboard of this insulator 21.Heater 3 for example is divided into three sections up and down and is located on the sidewall of insulator 21 (3a, 3b, 3c), and ceiling heater 31 is located at ceiling portion.And heater 3a is corresponding to district Z
1, heater 3b is corresponding to district Z
2, heater 3c is corresponding to district Z
3Be provided with.
Heater 3 (the stage casing district Z in the middle of the 3a～c)
2 Heater 3b, be the so-called primary heater that forms the most of heat-treating atmosphere in the reaction tube 1 as shown in fig. 1, be disposed at its heater 3a up and down and 3c and be respectively the upper part that forms reaction tube 1 and end portion heat-treating atmosphere compare small-sized so-called secondary heater with primary heater 3b.As the material of heater 3, can with for example with the highly purified carbon fiber bundle in about 10 microns in line footpath by the formed carbon filament sealing of braiding in pottery person in the transparent quartz ampoule of tens millimeters of external diameters for example.Moreover heater 3 to be not limited thereto also can be the metallic object of iron-tantalum-carbon alloy etc. for example.
And then lid 11 being set so that block house steward 23 lower ending opening portion, this lid 11 is located on the casket lifter 12.On lid 11, be provided with: heat-insulation unit 13, be connected and connect the inner and rotating shaft 15 that is provided with of heat-insulation unit 13 with the drive division 14 on being located at casket lifter 12, and keep the wafer cassette 16 that substrate keeps tool that becomes of its lower end freely by these rotating shaft 15 rotations.Wafer cassette 16 is taken as and can be held in the frame shape to a plurality of wafer W as substrate, and heat-insulation unit 13 is taken as the formation of insulating unit 13a such as making up quartzy fin and heat generating body unit 13b etc. in addition.
In interior pipe 11a, be provided with the thin quartz ampoule 40 that thermocouple is used, in this quartz ampoule 40, at each district Z
1～Z
3Three the internal heat galvanic couples (second temperature detecting part) 4 (4a, 4b, 4c) that are provided with as the internal temperature test section are divided into for example three sections the responsible district Z of each heater 3 (3a, 3b, 3c) so that detect respectively
1, Z
2, Z
3Temperature.In addition, near heater 3 (3a, 3b, 3c), distinguish Z at each
1～Z
3Be provided with the external heat galvanic couple as the external temperature test section (first temperature detecting part) 5 (5a, 5b, the 5c) of the temperature that detects heater 3 (3a, 3b, 3c) respectively.
And, corresponding to the district Z of each section
1～Z
3Heater 3 (3a, 3b, 3c), be provided with the power feeding section 20 (20a, 20b, 20c) of supply capability and control the supply capability of each power feeding section 20 (20a, 20b, 20c) and be used for controlling the control part 6,7,8 of the caloric value of each heater 3 (3a, 3b, 3c).If though details aftermentioned but constitute with regard to the distribution at related position describe simply, then internal heat galvanic couple 4 (4a, 4b, 4c) and external heat galvanic couple 5 (5a, 5b, 5c) respectively with the district Z of corresponding each section
1～Z
3Some connections of control part 6,7,8, from being located at the stage casing district Z that heater 3b is responsible for
2The holding wire that extends of external heat galvanic couple 5b halfway branch not only be connected to control part 7 and be also connected to control part 6 and 8.Be located in addition in the ceiling heater 31 of ceiling portion of insulator 21 and also be, be taken as with heater 3 (3a, 3b, 3c) and be provided with thermocouple 32 equally, control is carried out the formation of the adjusting of caloric value whereby from the amount of power supply of control part 33 via 34 pairs of heaters 31 of power feeding section.
In heater 3 (3a, 3b, 3c) and the control part 6,7,8 that is attached thereto, be taken as the reason of above-mentioned this distribution structure, be because can be under following two kinds of situations alternately used: at district Z at each section
1～Z
3Individually under the situation of control heater 3, and in that the temperature detection value corresponding to the external heat galvanic couple 5b of the heater 3b that becomes primary heater is utilized at other positions, carry out under the situation of so-called tracking Control at heater 3a and 3c place.The formation of control system of heater 3 that just becomes the major part of present embodiment below with reference to Fig. 2 describes.
At first control part 6,8 is necessary to use respectively two kinds of operation methods as mentioned above.Therefore control part 6 comprises first operational part 61 and second operational part 62, and control part 8 comprises first operational part 81 and second operational part 82.The operational part 7 that there is no need the switch operation method only has second operational part 72 (71 save numbering for convenience).That is to say that first operational part 61,81 of control part 6,8 carries out tracking control section 7 at control part 6,8 and (correctly says so and follow the tracks of the district Z that is responsible for from control part 7
2The temperature detection value that obtains) uses when the computing.Therefore, the holding wire that extends from said external thermocouple 5b respectively at control part 6 to first operational part 61, connect to first operational part 81 at control part 8 places.
On the other hand, because second operational part 62,72,82 based on district Z from each correspondence
1～Z
3In set internal heat galvanic couple 4 (4a, 4b, 4c) and the resulting temperature detection value of external heat galvanic couple 5 (5a, 5b, 5c), with respectively distinguish Z respectively individually
1～Z
3The temperature objectives value that exclusively sets is carried out computing, so connecting internal heat galvanic couple 4a (4b, 4c), external heat galvanic couple 5a (5b, 5c) and desired value efferent 63 (73,83) on second operational part 62 (72,82).And be taken as by first operational part 61,81 or second operational part, 62,72,82 operation results of being exported as the formation of control signal to power feeding section 20 (20a, 20b, 20c) output.This external control part 6 (8) is located can select to use some in first operational part 61 (81) or second operational part 62 (82) by switching part 64 (84).
Here although understand the formation of first operational part 61,81, but because these have same structure, so be that example describes with reference to Fig. 3 with first operational part 81.Label 811 is comparison operation portions among Fig. 3, and label 812 is correction value efferents, in comparison operation portion 811, to be located at stage casing district Z
2In the temperature detection value of the external heat galvanic couple 5b correction value that this temperature objectives value added and exported from correction value efferent 812 as the temperature objectives value, and then deduct the district Z that is located at hypomere
3On the temperature detection value of external heat galvanic couple 5c.Aforementioned correction value is to be used for revising stage casing district Z
2With hypomere district Z
3The so-called static modification key element of difference of the target temperature the during processing at place.Specifically this correction value is obtained as the difference value of used temperature objectives value from desired value efferent 73,83 both sides that exported in second operational part 72,82 described later for example.
Outlet side in comparison operation portion 811, be provided with to its output valve (departure) q1 multiply by regulation coefficient k take advantage of calculation portion 813.The hypomere district Z of control part 8 correspondences as mentioned above
3Approach most the lower side peristome of reaction tube 1a, because be subjected to influence easily, so and stage casing district Z with the cold air of wafer cassette 16 inflows
2Comparing the required thermal output that adds that heats up increases.Consider this situation, in taking advantage of calculation portion 813, carry out output valve q1 be multiply by the so-called of coefficient k of regulation as mentioned above and dynamically revise in order to be reflected to output valve from the recruitment of the output of comparison operation portion 811.In taking advantage of calculation portion 813, the value of coefficient k is for example 1.2 (corresponding to the little epimere district Z of the influence of cold air
1First operational part 61 in for example 0.8) be used.This output valve is carried out various computings (PID computing) about integral element I1, ratio key element P1, differential key element D1, be used for carrying out the output valve B1 that supplies with corresponding to the electric power of aforementioned departure q1 via 814 outputs of mixing portion.
Though next the formation of second operational part 62,72,82 is described, because equally all have same structure, so be that example describes with reference to Fig. 4 with second operational part 82 with the occasion of above-mentioned first operational part.This second operational part 82 carries out the temperature detection value at internal heat galvanic couple 4c place is included in major loop, the temperature detection value of external heat galvanic couple 5c being included in the cascade of minor loop controls and controlled signal B2, label 821～824 expression comparison operation portions, I1 represents integral element, P2 represents the ratio key element, and D2 represents the differential key element.
; though so far Shuo Ming control part 6 is actually by the ROM of CPU, stored routine and the memory of record desired temperature and constitutes; perhaps advance passerby with software mode, carry out this computing but also can constitute in the present embodiment by hardware by each operation program.In addition in the switching part 84 (64) from of the timing of first operational part 81 (61) to the switching of second operational part 82 (62), for example can determine when wafer cassette 16 being moved into the temperature stabilization that detects before heating up in the back in the reaction vessel, after perhaps wafer cassette 16 being moved into through after the stipulated time, when its timing of oppositely switching can be defined as for example cooling to the temperature of regulation in handling the afterreaction container etc.
Next the effect with regard to above-mentioned execution mode describes.
To the wafer W in said apparatus heating, undertaken by the heater 3 of the side side that is located at this reaction tube 1 and the ceiling heater 31 that is located at upper side.Because the major part in the present embodiment is to cut apart the control mode of the heater 3 (3a, 3b, 3c) of setting, a bit also describe with reference to Fig. 5 so be conceived to this.At first the wafer cassette 16 that the wafer W frame shape ground as substrate is carried begins to move in reaction vessel (reaction tube 1 and house steward 23) by casket lifter 12 is risen at the t1 of Fig. 5 constantly.Be heated to the temperature for example about 600 ℃ that becomes regulation this moment in the reaction tube 1, corresponding on hypomere district Z
1, Z
3Control part 6,8 in, select first operational parts 61,81 so that follow the tracks of stage casing district Z by switching part 64,84 as has been described
2Temperature control.
If at first the upper end of wafer cassette 16 enters reaction vessel at the beginning, though so then because wafer cassette 16 and wafer W are in outside the reaction vessel before this is cold, therefore as the hypomere district Z of the reaction vessel of the responsible scope of secondary heater 3c
3Temperature once reduced.In addition as the stage casing district Z of the responsible scope of primary heater 3b
2Though the temperature wafer cassette 16 of also catching a cold influence and reduce stage casing district Z
2Temperature reduce degree than hypomere district Z
3Temperature reduce little.And wafer cassette 16 1 arrives stage casing district Z
2, this stage casing district Z
2Temperature also reduce.This moment is because heat up at leisure along with wafer cassette 16 and wafer W rise in reaction vessel, though stage casing district Z
2Become and be lower than the temperature of wafer cassette 16 before moving into, but unlike hypomere district Z
3So low.
If wafer cassette 16 is moved in the reaction vessel like this, then hypomere district Z
3The coldest, stage casing district Z
2Also cold, epimere district Z
1Cooling a little.Though corresponding to hypomere district Z
3So control part 8 in since the supply capability that the temperature of external heat galvanic couple 5c reduces to secondary heater 3c sharply strengthen, but because as the stage casing district Z of temperature objectives value
2So temperature detection value also reduce according to this increase that reduces to the electric power quantity delivered of secondary heater 3c and suppressed slightly.Then along with stage casing district Z
2The rising of temperature detection value, the temperature of the secondary heater 3c of hypomere improves.Then at stage casing district Z
2The temperature of the external heat galvanic couple 5b of place surpasses the temperature objectives value and becomes the overshoot state, and the temperature of later external heat galvanic couple 5b reduces to the temperature objectives value.Follow the tracks of Z in the stage casing district
2The behavior of this temperature to hypomere district Z
3The electric power quantity delivered of secondary heater 3c be controlled, the temperature of secondary heater 3c is according to stage casing district Z
2 Secondary heater 3b temperature convergence and converge on the temperature objectives value.
Epimere district Z in addition
1 Secondary heater 3a in also be to follow the tracks of stage casing district Z
2The action control electric power quantity delivered of temperature of primary heater 3b, the temperature of secondary heater 3a is according to stage casing district Z
2 Primary heater 3b temperature convergence and converge on the temperature objectives value.Moreover the temperature of secondary heater 3c (3a) convergence, as shown in Figure 3 owing to carry out correction value is added in stage casing district Z
2The computing of temperature detection value, so if for example when heat treatment (during processing) than stage casing district Z
2And hypomere district Z
3For example 10 ℃ of temperature objectives value height, hypomere district Z then
3The temperature of convergence of secondary heater 3c become the value higher 10 ℃ than the temperature of primary heater 3b.
In the end of moving into of t2 moment wafer cassette 16, if the temperature stabilization in each district in t3 moment reaction vessel, then control part 6,8 switches to second operational part 62,82 and carries out the electric power control of heater 3a, 3c from first operational part 61,81 then.Then begin constantly to heat up from t3, be heated to the predetermined process temperature after, t4 constantly (the stable back of the treatment temperature in each district in detail) wafer W is heat-treated.As one of this heat treatment example, can enumerate and for example in reaction vessel, be maintained to about 800 ℃, from gas supply pipe 23 film forming gas of regulation are supplied in the reaction vessel and from blast pipe 25 vacuum exhausts and to be maintained at the specified vacuum degree, wafer W is carried out the process that film forming is handled.Moreover can be in that heat up midway also can be when being stable at treatment temperature to the switching of second operational part 62,82 from first operational part 61,81.If constantly on the wafer W surface, formed the film forming of regulation at t5, for example cool to about 600 ℃ of temperature when moving into after, carry out taking out of of wafer cassette 16 with the opposite order when moving into constantly at t6 for example.
As described in so far, if with above-mentioned execution mode then in the temperature control that is divided into a plurality of set heaters 3 (3a, 3b, 3c), be responsible for going up hypomere district Z
1, Z
3The control part that adds thermal control 6,8 with stage casing district Z when wafer W is moved into
2Temperature detection value as the temperature objectives value and based on it and local area Z separately
1, Z
3Temperature detection value carry out temperature control.Therefore, each distinguishes Z
1～Z
3Temperature promptly be stable at the temperature objectives value.For example, with regard to hypomere district Z
3 Secondary heater 3c near, though temperature reduce because of moving into of wafer cassette 16, because of as the stage casing district Z of temperature objectives value
2 Primary heater 3b near temperature also reduce, so the departure of temperature objectives value and temperature detection value reduces, can suppress the increase of the caloric value of secondary heater 3c slowly.Near the secondary heater 3c temperature surpasses original temperature objectives value and overshoot then, though the caloric value of current secondary heater 3c reduces (temperature will reduce), but, can carry out the reduction of temperature so compare with the occasion that the temperature objectives value is certain as always because the caloric value of secondary heater 3c is followed the tracks of near the temperature the primary heater 3b gentlely.As a result, the fluctuation up and down of temperature be inhibited and soft landing promptly in the temperature objectives value.In addition with regard to epimere district Z
1The temperature of secondary heater 3a also be owing to follow the tracks of near the primary heater 3b temperature, so temperature promptly is stable at the temperature objectives value.
And then when cold wafer cassette 16 and wafer W are moved in the reaction vessel, according to each district Z
1～Z
3Temperature from wafer cassette 16 and the affected degree of wafer W among first operational part 61,81 of control part 6,8, include Z in to the stage casing district
2The Tracking ratio of the control part 7 at place.For example in above-mentioned example, because epimere district Z
1The effect that is subjected to is less than stage casing district Z
2The effect that is subjected to, hypomere district Z in addition
3The effect that is subjected to is greater than stage casing district Z
2So the effect that is subjected to is epimere district Z
1The Tracking ratio of the control part 6 at place sets 0.8 for, hypomere district Z
3The Tracking ratio of the control part 8 at place sets 1.2 for.Fig. 6 illustrates stage casing district Z
2The variation of temperature detection value of external heat galvanic couple 5b, with the epimere district Z that Tracking ratio is become at 5%, 30%, 100% o'clock
1Each temperature detection value, from then among the figure as can be seen, epimere district Z
1The amplitude of variation of temperature detection value of external heat galvanic couple 5a when Tracking ratio is big, increase, hour reduce at Tracking ratio.Thereby as above-mentioned execution mode, pass through to adjust the Tracking ratio of the temperature control of secondary heater 3a, 3c to primary heater 3b, can be at epimere district Z
1, hypomere district Z
3The reaction vessel of each place when being equilibrated at moving into of wafer cassette 16 in the temperature control of Temperature Distribution because the temperature in each district of this point also promptly is stable at the temperature objectives value.And then because the temperature stabilization time in each district after the moving into of wafer cassette 16 about greatly productivity ratio, so can boost productivity in the present embodiment.
Fig. 7 is illustrated in the vertical heat processing apparatus shown in Fig. 1, and near near near the temperature the secondary heater 3a before wafer cassette 16 is moved in the reaction vessel, the primary heater 3b, the secondary heater 3c is stable near the simulation result that lasts variation of the temperature 575 ℃, 573 ℃, 560 ℃ state each heater 3a～3c when carrying out moving into of wafer cassette 16 respectively.Find out from the time of playing near the temperature stabilization each heater 3a～3c of moving into of beginning wafer cassette 16 to be approximately 13 minutes that the temperature in each district is stable at short notice when the moving into of wafer W.
Moreover, though in the explanation of first operational part 61,81, respectively distinguish Z as what obtain hypomere
1, Z
3In with the operation method of the Tracking ratio in stage casing district, the method that multiply by predetermined coefficient k has been described, but also can be when the rising of wafer cassette 16, according to the position of this wafer cassette 16 k is changed.In addition in the present embodiment, also can when the moving into of wafer W, be taken into the temperature detection value of the internal heat galvanic couple 4a～4c that corresponds respectively to each control part 6,7,8, in control part 6,8 with stage casing district Z
2The temperature detection value of internal heat galvanic couple 4b compare with the temperature detection value of internal heat galvanic couple 4a, 4c respectively as the temperature objectives value, carry out the temperature control of secondary heater 3a, 3c according to its departure, and the temperature objectives value according to special use is controlled primary heater 3b with the departure of the temperature detection value of internal heat galvanic couple 4b in control part 7.And then present embodiment also can be only with regard to hypomere district Z in addition
3 Secondary heater 3c, carry out with corresponding to stage casing district Z
2Temperature detection value as the tracking Control of temperature objectives value.
If as above, use the present invention, then can in being divided into the heat-treating atmosphere in a plurality of districts, carry out the processing of substrate, can make each temperature of distinguishing stabilisation promptly, can seek the raising of productivity ratio.
Claims (13)
1. an annealing device is characterized in that, has:
Be divided into the reaction vessel in a plurality of districts,
The substrate that supports a plurality of substrates and moved in the reaction vessel keeps tool,
At the set heating unit in each district,
At the set temperature detecting part in each district, and
Set at each district, control the control part of each heating unit independently,
Control part corresponding to a district has first operational part: when the moving into of described substrate, this first operational part is based on the temperature detection value corresponding to the temperature detecting part in this district, with the temperature detection value corresponding to the temperature detecting part in other districts is that the temperature objectives value is carried out computing, and with its operation result as corresponding to the control signal of the heating unit in this district and exported.
2. annealing device as claimed in claim 1 is characterized in that,
Temperature detecting part comprises first temperature detecting part that detects near the temperature the heating unit, and the temperature detection value of described temperature detecting part corresponding to other districts is the temperature detection value of first temperature detecting part.
3. annealing device as claimed in claim 1 is characterized in that,
Temperature detecting part comprises second temperature detecting part of the temperature in the detection reaction container, and the temperature detection value of described temperature detecting part corresponding to other districts is the temperature detection value of second temperature detecting part.
4. annealing device as claimed in claim 1 is characterized in that,
Corresponding to the control part in a district, also comprise second operational part:
When the heat treatment substrate, this second operational part carries out computing based on temperature objectives value that sets in this district and temperature detection value corresponding to the temperature detecting part in this district, and with its operation result as being exported corresponding to the control signal of the heating unit in this district.
5. annealing device as claimed in claim 1 is characterized in that,
Temperature detecting part comprises: detect near first temperature detecting part of the temperature the heating unit, and with second temperature detecting part of temperature in the detection reaction container,
First operational part corresponding to the control part in a district, when the moving into of substrate, to carry out computing as the temperature objectives value corresponding to first temperature detecting part in other districts or the temperature detection value of second temperature detecting part, with its operation result as control signal output corresponding to the heating unit in this district
Control part corresponding to a district, also comprise second operational part: when the heat treatment substrate, this second operational part based on the temperature objectives value that sets in this district with carry out computing corresponding to first temperature detecting part in this district and each temperature detection value of second temperature detecting part, and with its operation result as being exported corresponding to the control signal of the heating unit in this district.
6. annealing device as claimed in claim 1 is characterized in that,
First operational part corresponding to the control part in a district, carry out computing based on the value that obtains correction value with corresponding to the temperature detection value addition of the temperature detecting part in other districts and corresponding to the departure between the temperature detection value of the temperature detecting part in this district, with its operation result as control signal output corresponding to the heating unit in this district.
7. annealing device as claimed in claim 6 is characterized in that,
Corresponding to first operational part of the control part in a district, when the heat treatment substrate with the temperature objectives value that sets in the district with corresponding to the difference of the temperature objectives value in other districts as correction value.
8. annealing device as claimed in claim 6 is characterized in that,
First operational part corresponding to the control part in a district carries out computing based on the value that the ratio that described departure be multiply by regulation obtains.
9. annealing device as claimed in claim 1 is characterized in that,
Reaction vessel constitutes vertical, and substrate keeps tool to move into from the lower side of reaction vessel,
Be divided at least three sections on the above-below direction in the reaction vessel, a described district is hypomere district, and described other districts are the districts except epimere.
10. a heat treatment method keeps the substrate that supports a plurality of substrates tool to move in the reaction vessel that is divided into a plurality of districts, by corresponding respectively to each district of heating unit heating in described a plurality of districts, it is characterized in that this method comprises:
Detection corresponding to the operation of the temperature in each district and
Control the operation of each heating unit based on the temperature detection value in temperature objectives value and each district,
When described substrate keeps moving into of tool, use the heating unit of controlling corresponding to the temperature detection value in other districts corresponding to this district as the temperature objectives value in the district.
11. heat treatment method as claimed in claim 10 is characterized in that,
When described substrate kept moving into of tool, the temperature objectives value in district was the value that obtains after correction value and the temperature detection value addition corresponding to other districts.
12. heat treatment method as claimed in claim 11 is characterized in that,
When described substrate keeps moving into of tool, the temperature objectives value that sets in the district during the heat treatment substrate with corresponding to the difference of the temperature objectives value in other districts as correction value.
13. heat treatment method as claimed in claim 10 is characterized in that,
When described substrate keeps moving into of tool, when the heating unit of control corresponding to a described district, resulting value is carried out computing after multiply by a departure based on ratio that will regulation, the temperature objectives value that the temperature detection value that this departure is meant this district and basis are obtained corresponding to the temperature detection value in other districts or add departure between the value that the temperature objectives value obtains of correction value.
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| Application Number | Priority Date | Filing Date | Title |
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| PCT/JP2002/011112 WO2004038776A1 (en) | 2002-10-25 | 2002-10-25 | Heat treatment system and heat treatment method |
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| US10629463B2 (en) | 2015-03-26 | 2020-04-21 | SCREEN Holdings Co., Ltd. | Thermal processing apparatus and thermal processing method |
| TWI747110B (en) * | 2015-02-25 | 2021-11-21 | 日商國際電氣股份有限公司 | Temperature sensor, substrate processing device and manufacturing method of semiconductor device |
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| JP4905381B2 (en) * | 2007-02-27 | 2012-03-28 | 東京エレクトロン株式会社 | Heat treatment apparatus and heat treatment method for object to be processed |
| FR3007511B1 (en) * | 2013-06-19 | 2017-09-08 | Herakles | INSTALLATION FOR THERMAL TREATMENTS OF PRODUCTS IN COMPOSITE MATERIAL COMPRISING DELOCALIZED TEMPERATURE MEANS |
| JP6090184B2 (en) * | 2014-01-27 | 2017-03-08 | 信越半導体株式会社 | Semiconductor wafer cleaning tank and bonded wafer manufacturing method |
| KR101744201B1 (en) | 2015-12-28 | 2017-06-12 | 주식회사 유진테크 | Apparatus for processing substrate |
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| WO2004038776A1 (en) | 2004-05-06 |
| CN1685476A (en) | 2005-10-19 |
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