CN100362621C - Device and method for reducing thin-film type capacitance vacuum gauge zero-point drift - Google Patents
Device and method for reducing thin-film type capacitance vacuum gauge zero-point drift Download PDFInfo
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- CN100362621C CN100362621C CNB2005101263448A CN200510126344A CN100362621C CN 100362621 C CN100362621 C CN 100362621C CN B2005101263448 A CNB2005101263448 A CN B2005101263448A CN 200510126344 A CN200510126344 A CN 200510126344A CN 100362621 C CN100362621 C CN 100362621C
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Abstract
The present invention relates to the technical field of microelectronics, which discloses a device and a method thereof for reducing thin-film type capacitance vacuum gauge zero-point drift. The present invention comprises a reaction chamber, a vacuum gauge, a heating band arranged on the vacuum gauge, a connecting pipeline which is connected with the reaction chamber and the vacuum gauge, an isolating valve, a vacuum switch, a heating band arranged on the isolating valve, and a heating band arranged on the connecting pipeline, wherein the isolating valve is arranged on the connecting pipeline; the vacuum switch is arranged on the reaction chamber. The method is that (1) the designed action point of the vacuum switch is arranged between 100% to 150% of a full flow of the vacuum gauge; (2) when the pressure of the reaction chamber is greater than the designed point of the vacuum switch, the isolating valve is closed; (3) when the pressure of the reaction chamber is less than the designed point of the vacuum switch, the isolating valve is opened. The present invention can reduce deposition and adherence of technology reaction subsidiary products and particulates on a thin film inside the vacuum gauge so as to prevent thin-film type capacitance vacuum gauge zero-point drift and to improve stability of the technology.
Description
Technical field
The present invention relates to microelectronics technology, be specifically related to be used to prevent or reduce the null offset of semiconductor equipment vacuum measuring equipment.
Background technology
Present most semiconductor equipment vacuum measuring equipment all uses the thin-film type capacitance vacuum gauge, but null offset in use often appears in the diaphragm type vacuum gauge, causes equipment pressure to be regulated and loses efficacy, and influences technology, reduces the product yield.The reason of thin-film type capacitance vacuum null offset mainly is the deposit of technological reaction accessory substance and particle on the capacitive window or adheres to.
As shown in Figure 1, the method that reduces null offset at present mainly is to select the vacuum gauge of high-temperature work range and band heating function, perhaps add heating tape (Jacket) to vacuum gauge, can keep whole vacuum gauge to be operated under the more stable environment of temperature like this, just can reduce the deposit of accessory substance and particle and adhere to.But also there is deficiency in this scheme: 1, reative cell and vacuum gauge all are to be connected or to weld by stainless steel tube, though reative cell and vacuum gauge all have heating, but because not heating of stainless steel tube, therefore temperature is relatively low, still can cause the deposit of technological reaction accessory substance and particle or adheres to.2, the range of thin-film type capacitance vacuum gauge is generally all smaller, and the pressure ratio of possible reaction chamber is higher when not carrying out technology, surpasses more than 10 times of vacuum gauge full scale.Pressure reduction at state of the art and non-state of the art is bigger, may cause the distortion of vacuum gauge internal membrane; Simultaneously because turbulence causes particle to adhere to.
Summary of the invention
(1) technical problem that will solve
The purpose of this invention is to provide a kind of device that reduces vacuum gauge zero-point drift, improves the minimizing thin-film type capacitance vacuum gauge zero-point drift of technology stability.Purpose of the present invention also provides the method that reduces thin-film type capacitance vacuum gauge zero-point drift.
(2) technical scheme
In order to achieve the above object, the present invention takes following scheme:
The present invention includes the connecting tube of heating tape, coupled reaction chamber and vacuum gauge on reative cell, vacuum gauge and the vacuum gauge, also comprise: the heating tape on isolating valve, vacuum switch, the isolating valve, the heating tape on the connecting tube, wherein, isolating valve is located on the connecting tube, and vacuum switch is located on the reative cell.
Wherein, described isolating valve adopts pneumatic isolating valve.
Be used to reduce the method for the device of thin-film type capacitance vacuum gauge zero-point drift, it is characterized in that following steps are arranged:
1) the setting operating point of vacuum switch is set between the 100%-150% of vacuum gauge full scale;
2) when chamber pressure during, close isolating valve greater than the vacuum switch set point;
3) when chamber pressure during, open isolating valve less than the vacuum switch set point.
(3) beneficial effect
Compared with the prior art owing to adopt above scheme, the present invention can reduce technological reaction accessory substance and particle on the vacuum gauge internal membrane deposit and adhere to; Prevent thin-film type capacitance vacuum gauge zero-point drift, improve technology stability.
Description of drawings
Fig. 1 is the prior art structural representation;
Fig. 2 is a structural representation of the present invention.
Among the figure: 1, vacuum gauge; 2, reative cell; 3, connecting tube; 4, the heating tape on the vacuum gauge; 5, isolating valve; 6, vacuum switch; 7, the heating tape on the isolating valve; 8, the heating tape on the connecting tube.
Embodiment
Following examples are used to illustrate the present invention, but are not used for limiting the scope of the invention.
As shown in Figure 2, enforcement of the present invention, the one, on connecting tube 3, be provided with pneumatic isolating valve 5, control vacuum gauge 1 is connected with reative cell 2; The 2nd, on connecting tube 3, isolating valve 5 and vacuum gauge 1, all increase heating tape 4,7,8; The 3rd, on reative cell 2, establish a vacuum switch 6.
By pneumatic isolating valve 5 is set on connecting tube 3, can when reative cell 2 pressure are relatively large, close isolating valve 5, this moment, vacuum gauge 1 inside and reative cell 2 were isolated, and relative high vacuum state of vacuum gauge 1 inner maintenance reduces the turbulent particle that causes and adheres to.
On connecting tube 3, pneumatic isolating valve 5 and vacuum gauge 1, all increase the heating tape, make that vacuum gauge 1 working temperature is more stable, reduced process byproducts and particle adhering to and deposit on the vacuum gauge internal membrane under the state of the art.
Concrete grammar is: increase a vacuum switch 6 on reative cell 2, the setting operating point of vacuum switch 6 is set between the 100%-150% of vacuum gauge 1 full scale; When reative cell 2 pressure during, close isolating valve 5 greater than vacuum switch 6 set points; When reative cell 2 pressure during, open isolating valve 5 less than vacuum switch 6 set points.
Claims (3)
1. device that reduces thin-film type capacitance vacuum gauge zero-point drift, comprise heating tape (4), coupled reaction chamber (2) and vacuum gauge (1) on reative cell (2), vacuum gauge (1) and the vacuum gauge (1) connecting tube (3), be located at isolating valve (5) on the connecting tube (3), the heating tape (7) on the isolating valve (5), the heating tape (8) on the connecting tube (3), it is characterized in that this device also comprises: be located at the vacuum switch (6) on the reative cell (2).
2. a kind of device that reduces thin-film type capacitance vacuum gauge zero-point drift as claimed in claim 1 is characterized in that: described isolating valve (5) adopts pneumatic isolating valve.
3. be used for the described a kind of method that reduces the device of thin-film type capacitance vacuum gauge zero-point drift of claim 1, it is characterized in that following steps are arranged:
1) the setting operating point of vacuum switch (6) is set between the 100%-150% of vacuum gauge (1) full scale;
2) when reative cell (2) pressure during, close described isolating valve (5) greater than vacuum switch (6) set point;
3) when reative cell (2) pressure during, open described isolating valve (5) less than vacuum switch (6) set point.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005101263448A CN100362621C (en) | 2005-12-07 | 2005-12-07 | Device and method for reducing thin-film type capacitance vacuum gauge zero-point drift |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005101263448A CN100362621C (en) | 2005-12-07 | 2005-12-07 | Device and method for reducing thin-film type capacitance vacuum gauge zero-point drift |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1851853A CN1851853A (en) | 2006-10-25 |
| CN100362621C true CN100362621C (en) | 2008-01-16 |
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| Application Number | Title | Priority Date | Filing Date |
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| CNB2005101263448A Active CN100362621C (en) | 2005-12-07 | 2005-12-07 | Device and method for reducing thin-film type capacitance vacuum gauge zero-point drift |
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| CN (1) | CN100362621C (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101928924A (en) * | 2010-05-11 | 2010-12-29 | 赫得纳米科技(昆山)有限公司 | Vacuum sputtering coating equipment |
| CN109411385B (en) * | 2017-08-17 | 2022-05-27 | 北京北方华创微电子装备有限公司 | Vacuum gauge connecting assembly and semiconductor equipment |
| CN107841730B (en) * | 2017-11-23 | 2019-09-13 | 滁州国凯电子科技有限公司 | A method of extending ALD vacuum meter service life |
| CN114486062B (en) * | 2022-03-31 | 2022-07-15 | 季华实验室 | Capacitance film vacuum gauge for eliminating film stress |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0831745A (en) * | 1994-07-12 | 1996-02-02 | Kokusai Electric Co Ltd | Semiconductor manufacturing equipment |
| JPH10116825A (en) * | 1996-10-15 | 1998-05-06 | Kokusai Electric Co Ltd | Semiconductor manufacturing device |
| JPH10153510A (en) * | 1996-11-21 | 1998-06-09 | Nec Kansai Ltd | Vacuum apparatus and diaphragm vacuum gauge |
| JP2004239770A (en) * | 2003-02-06 | 2004-08-26 | Nhv Corporation | Piping structure for attaching ionization vacuum gage |
| US20050241370A1 (en) * | 2004-04-28 | 2005-11-03 | Sid Harvey Industries, Inc. | Pump testing apparatus and method |
-
2005
- 2005-12-07 CN CNB2005101263448A patent/CN100362621C/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0831745A (en) * | 1994-07-12 | 1996-02-02 | Kokusai Electric Co Ltd | Semiconductor manufacturing equipment |
| JPH10116825A (en) * | 1996-10-15 | 1998-05-06 | Kokusai Electric Co Ltd | Semiconductor manufacturing device |
| JPH10153510A (en) * | 1996-11-21 | 1998-06-09 | Nec Kansai Ltd | Vacuum apparatus and diaphragm vacuum gauge |
| JP2004239770A (en) * | 2003-02-06 | 2004-08-26 | Nhv Corporation | Piping structure for attaching ionization vacuum gage |
| US20050241370A1 (en) * | 2004-04-28 | 2005-11-03 | Sid Harvey Industries, Inc. | Pump testing apparatus and method |
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| Publication number | Publication date |
|---|---|
| CN1851853A (en) | 2006-10-25 |
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| C14 | Grant of patent or utility model | ||
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| EE01 | Entry into force of recordation of patent licensing contract |
Assignee: Chinalight Solar Co. Ltd. Assignor: Beifang Microelectronic Base Equipment Proces Research Center Co., Ltd., Beijing Contract fulfillment period: 2009.4.10 to 2015.4.9 Contract record no.: 2009110000095 Denomination of invention: Device and method for reducing thin-film type capacitance vacuum gauge zero-point drift Granted publication date: 20080116 License type: Exclusive license Record date: 2009.5.14 |
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| LIC | Patent licence contract for exploitation submitted for record |
Free format text: EXCLUSIVE LICENSE; TIME LIMIT OF IMPLEMENTING CONTACT: 2009.4.10 TO 2015.4.9; CHANGE OF CONTRACT Name of requester: CHINA LIGHT SOLAR CO., LTD Effective date: 20090514 |
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| CP03 | Change of name, title or address | ||
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Address after: No. 8, Wenchang Avenue, Beijing economic and Technological Development Zone, 100176 Patentee after: Beijing North China microelectronics equipment Co Ltd Address before: 100016 Jiuxianqiao East Road, Chaoyang District, Chaoyang District, Beijing Patentee before: Beifang Microelectronic Base Equipment Proces Research Center Co., Ltd., Beijing |