CN100361308C - Method for producing photoelectric integration circuit in single chip - Google Patents
Method for producing photoelectric integration circuit in single chip Download PDFInfo
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- CN100361308C CN100361308C CNB2004100403066A CN200410040306A CN100361308C CN 100361308 C CN100361308 C CN 100361308C CN B2004100403066 A CNB2004100403066 A CN B2004100403066A CN 200410040306 A CN200410040306 A CN 200410040306A CN 100361308 C CN100361308 C CN 100361308C
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Abstract
The present invention discloses a method for making single-chip photoelectric integrated circuits by using the laser auxiliary micro-machining technology. In the process of making optical devices, high-temperature areas are strictly limited within the area where the optical devices are positioned in the high-temperature technology of diffusing, alloying, etc. by using the high locality of laser light, so that the high-temperature impact toward the finished integrated circuits on basal pieces is avoided, no negative influence is produced on the performance of electric devices, both optical and electric devices finally have optimal performance, and the purpose of improving the integral performance level of single-chip photoelectric integrated circuit devices is achieved.
Description
Technical field:
The invention belongs to the photoelectron technology field, it is particularly related to the preparing technical field of monolithic optoelectronic integrated circuit.
Background technology:
The monolithic optoelectronic integrated circuit is to utilize photoelectron technology and microelectric technique that opto-electronic device and microelectronic component monolithic are integrated into same substrate, is made.Wherein optoelectronic integrated circuit is called for short OEICs (Optoelectronic Integrated Circuits).
Monolithic OEICs has at a high speed and low noise characteristic by the integrated parasitic parameter that reduced, and has become the Primary Component of ultrahigh speed communication system.In the base station of millimeter wave optical fiber-wireless system, light/mm wave converter is a key element, and monolithic OEICs is the better selection of this element.In other Optical Access Networks, photoelectric conversion module also is a Primary Component, because it must can two-way operation, cheap, output is big, and the also available monolithic OEICs of this demand satisfies.Monolithic OEICs also can be used for optical storage system and light interconnection.The problems such as time-delay of the electromagnetic interference in the electrical interconnection, cross-talk and RC-restriction have been eliminated in the light interconnection.Monolithic OEICs also can be used for the wavelength control in light exchange and the photometry calculation, ([1] Mario Dagenais, Robert F.Leheny, " Integratedoptoelectronics " such as beam direction control, the first edition Academic Press, 1995).
Monolithic OEICs need be integrated into photoelectron, the electronics two class functions device different with structure on the same substrate, so need to solve the problem of structure and processing compatibility.Present solution is to adopt growth technology, method with one step growth or multistep growth grows the device material structure, adopt diffusion, alloy, annealing, photoetching, corrosion and semiconductor technology such as peel off and produce monolithic OEICs ([2] Kiyoto Takahata, Yoshifum Muramoto, et al., " Ultrafast monolithicreceiver OEIC composed of multimode waveguide p-i-n photodiode and HEMTdistributed amplifier ", IEEE Journal on Selected Topics in Quantum Electronics, Vol.6, pp.31-36,2000
[3]Andreas?Umbach，Thomas?Engel，et?al.，“Technology?of?InP-based?1.55-μmultrafast?OEMMIC’s：40-Gbit/s?broad-band?and?38/60-GHz?narrow-bandphotoreceivers”，IEEE?Journal?of?Quantum?Electronics，Vol.36，pp.1024-1031，1999
[4]D.Huber，M.Bitter，M.Dulk，et?al.，“53?GHz?monolithically?integratedInP/InGaAs?PIN/HBT?receiver?OEIC?with?an?electrical?bandwidth?of?63?GHz”，Conference?Proceedings-International?Conference?on?Indium?Phosphide?andRelated?Materials?May?14-May?182000，p?325-328，2000
[5] Ao Jinping, Ceng Qingming etc., " the integrated MSM/HEMT long wavelength light of monolithic receiver ", photoelectron laser, the 11st volume, 241-243 page or leaf, 2000).Have the monolithic OEICs product of the 40Gb/s speed of producing with this way on the market.But this method needs complicated technical process, makes that the production efficiency of device is low, and the consistency of device is poor, causes device cost very high, is difficult to be accepted by market.
Simultaneously, said method still can not solve the problem of photoelectricity two parts compatibility fully.For example in the such monolithic OEICs of the integrated optical receiver of PIN/HBT monolithic, though base stage and collector layer that the PIN detector layer can shared HBT, reduce detector electric capacity and reduce charge carrier problem ([4] D.Huber but still exist to take into account in the drift time of collector layer, M.Bitter, M.Dulk, et al., " 53GHz monolithically integrated InP/InGaAs PIN/HBT receiver OEIC with anelectrical bandwidth of 63 GHz ", Conference Proceedings-InternationalConference on Indium Phosphide and Related Materials May 14-May 182000, p 325-328,2000).Adopt the MSM photodiode can solve the process compatible problem to a certain extent as the photo-detector of the integrated optical receiver of monolithic, but because the electrode of MSM photo-detector is opaque, influenced responsiveness ([5] Ao Jinping of detector greatly, Ceng Qingming etc., " the integrated MSM/HEMT long wavelength light of monolithic receiver ", photoelectron laser, the 11st volume, the 241-243 page or leaf, 2000).Adopt in the integrated optical receiver of monolithic of PIN photodiode in the overwhelming majority of having reported, owing in device fabrication processes, adopt anode local diffusion technology (the electric device performance being had a negative impact avoiding), can only produce the PIN photodiode of mesa structure, and the p-n junction of the PIN photodiode of mesa structure exposes in the external world, thereby stability and reliability have serious inadequate natural endowment ([6] Xu Zhitao, Wang Renfan etc., " research of 10Gbit/s high speed GaInAs/InP plane PIN ", optical communication research, total the 89th phase, the 37-41 page or leaf, 1998).Therefore, in order to produce the planar structure PIN diode of high reliability in the integrated optical receiver of monolithic, people have adopted methods such as ion injection, rapid thermal treatment to realize doped anode.But, adopt methods such as rapid thermal treatment even spread contour thermal process, still can the performance of electric device be exerted an influence.When replacing diffusion to mix with the ion injection, though have the advantage of " writing direct " and " low temperature doping ", but ion can produce a large amount of lattice defects when injecting in crystal, these defectives must annealed the elimination, annealing is again high thermal process, and also always having residual defective after the annealing, this all can have a negative impact to light, electric device.
Summary of the invention
For addressing the above problem, the invention provides a kind of manufacture method of monolithic optoelectronic integrated circuit, according to method of the present invention photodiode/preceding being put integrated circuit (is called for short: PDIC) spread, laser fine process technology such as annealing can solve the photoelectricity compatibling problem in the monolithic OEICs technology, thereby reach the purpose of producing the monolithic OEICs with high reliability.
In order to describe content of the present invention easily, at first make term definition:
The induced with laser diffusion:; Utilize the laser beam that focuses on, under certain diffusion temperature, act on semiconductor chip, impurity source is incorporated into specific zone in some way and reaches certain requirement;
The induced with laser alloy: utilize the laser irradiation surface of semiconductor chip, interact by heating region surface charge carrier and metallic element, complex processes such as phase trans-substitution, phase counterdiffusion form heavily doped region at semiconductor surface;
Laser annealing: annealed in the zone that laser alignment need be annealed.
The manufacture method of a kind of monolithic optoelectronic integrated circuit provided by the invention is characterized in that the following step of its employing:
Step 4 utilizes the function of writing direct of laser fine processing to make optical device 4 in optical device 4 regions.The described method of the function of writing direct of laser fine processing of utilizing can be the induced with laser diffusion, can be induced with laser alloy, laser annealing etc.;
The mask that step 5 is removed the electric device part carries out the interconnection of light, electric device;
Through after the above step, just can obtain monolithic OEICs device.
Need to prove:
In step 2, when making circuit part, need not consider the technological requirement of optical device, thereby the performance of circuit part can obtain optimization.Secondly, in step 4, the induced with laser alloy is realized ohmic contact, and photoinduction annealing can be eliminated defective.The laser fine process technology that adopts when making optical device has K cryogenic treatment and unique superiority such as write direct, the high-temperature area strictness is limited in the optical device region in the high temperature technologies such as diffusion, alloy, can not produce high temperature impact to the integrated circuit of having made on the substrate, just can not influence the performance of circuit part yet, therefore can make light, electric two parts device all have optimum performance, thereby the overall performance level of monolithic OEICs device is improved.The induced with laser alloy is realized ohmic contact, and induced with laser annealing can be eliminated defective.
In step 5, carry out one of light, electric device interconnected method and be filling space between light, the electric device with polymer, then at the light of need interconnection, electric device zone metal-coated membrane to realize interconnection.
Operation principle of the present invention is as follows: utilize the function of writing direct of laser fine processing, make optical device with ways such as induced with laser diffusion, induced with laser alloy and laser annealings.In the course of processing, utilize the height locality of laser, in high temperature technologies such as diffusion, alloy, make the high-temperature area strictness be limited in the optical device region, avoided the integrated circuit of having made on the substrate is produced high temperature impact, finally make light, electric two parts device all have optimum performance, reach the purpose of the overall performance level that improves monolithic OEICs device.
Essence of the present invention is to utilize the auxiliary Micrometer-Nanometer Processing Technology of laser to make monolithic OEICs, promptly in making the optical device process, thereby utilize the height locality of laser in high temperature technologies such as diffusion, alloy, to make the high-temperature area strictness be limited in the optical device region, thereby avoid the integrated circuit of having made on the substrate is produced high temperature impact, the electric device performance is not had a negative impact, final so that light, electric two parts device all have optimum performance, reach the purpose of the overall performance level that improves monolithic OEICs device.
The invention has the advantages that:
(1) when making circuit part, need not consider the technological requirement of optical device, thereby the performance of circuit part can obtain optimization.
(2) because the laser fine process technology that adopts when making optical device has K cryogenic treatment and unique superiority such as write direct, the high-temperature area strictness is limited in the optical device region in the high temperature technologies such as diffusion, alloy, can not produce high temperature impact to the integrated circuit of having made on the substrate, just can not influence the performance of circuit part yet, therefore can make light, electric two parts device all have optimum performance, thereby the overall performance level of monolithic OEICs device is improved.
Description of drawings:
The Semiconductor substrate structural representation that Fig. 1 shelters the optical device region with mask
Wherein 1 is substrate, the 2nd, electric device, the 3rd, mask, the 4th, optical device.
The Semiconductor substrate structural representation that Fig. 2 shelters the electric device region with mask
Wherein 1 is substrate, the 2nd, electric device, the 3rd, mask, the 4th, optical device.
The integrated optical receiver schematic diagram of monolithic that Fig. 3 utilizes the auxiliary microfabrication of laser to make
Wherein 2 is electric devices, the 4th, photodiode, the 5th, anode, the 6th, negative electrode, the 7th, P
+-diffusion region, the 8th, isolated area, the 9th, High Electron Mobility Transistor (HEMT) layer, the 10th, silicon-indium phosphide substrate, the 11st, intrinsic region, the 12nd, N
+The diffusion region.
Embodiment
The auxiliary microfabrication of preparation laser is made the integrated optical receiver of monolithic photoelectricity (as shown in Figure 3)
(1) in indium phosphide (InP) substrate 10 previous step growth material, wherein each layer growth of photodiode on High Electron Mobility Transistor (HEMT) layer 9, etch isolated area after, the left side makes High Electron Mobility Transistor, the right makes PIN photodiode 4;
(2) etch the photodiode cathode table top;
(3) on the High Electron Mobility Transistor layer 9 on the isolated area left side, finish the making of electric device 2 parts;
(4) at photodiode top layer P
+Make the optical window of explorer portion on the diffusion region 7 by lithography, carry out the induced with laser diffusion then;
(5) finish photodiode N type (N
+Diffusion region 12) and P type (P
+Diffusion region 7) ohmic contact;
(6) at optical window plating anti-reflection film;
(7) electric device 2 and photodiode 4 interconnection;
(8) all devices are carried out Passivation Treatment.
Just can prepare the integrated optical receiver of monolithic photoelectricity thus.
In sum, because induced with laser spreads contour thermal process and makes the high-temperature region only be confined to photodetector area, under the prerequisite that the electric device performance is not had a negative impact, can produce the integrated smooth receiver of the monolithic with planar structure PIN photodiode.Method of the present invention can be used for preparing multiple monolithic optoelectronic integrated circuit.
Claims (2)
1, a kind of manufacture method of monolithic optoelectronic integrated circuit is characterized in that its adopts the step of F face:
Step 1 is ready to Semiconductor substrate (1), according to the designing requirement of making optoelectronic integrated circuit, determines the position of electric device (2), optical device (4), with mask the zone that will make optical device (4) is sheltered;
Electric device (2) region of step 2 on Semiconductor substrate (1) prepares electric device according to designing requirement with conventional integrated circuit technology;
Step 3 is removed the mask of optical device (4) region, will shelter with mask by the ready-made electric device of step 2 (2) part again;
Step 4 is in optical device (4) region, utilizes the function of writing direct of laser fine processing to make optical device (4), and described to utilize the method for the function of writing direct of laser fine processing be induced with laser diffusion or induced with laser alloy;
The mask that step 5 is removed the electric device part carries out the interconnection of light, electric device;
Through after the above step, just can obtain monolithic optoelectronic integrated circuit device.
2, the manufacture method of a kind of monolithic optoelectronic integrated circuit according to claim 1, it is characterized in that described in the step 5 carry out light, the electric device interconnected method is the space of at first filling with polymer between light, the electric device, then at the light of need interconnection, electric device zone metal-coated membrane to realize interconnection.
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| Application Number | Priority Date | Filing Date | Title |
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| CNB2004100403066A CN100361308C (en) | 2004-07-26 | 2004-07-26 | Method for producing photoelectric integration circuit in single chip |
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| CNB2004100403066A CN100361308C (en) | 2004-07-26 | 2004-07-26 | Method for producing photoelectric integration circuit in single chip |
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| CN100361308C true CN100361308C (en) | 2008-01-09 |
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| CN106783744B (en) * | 2016-12-27 | 2019-07-19 | 成都海威华芯科技有限公司 | A kind of production method of InP PIN photoelectric detector integrated device |
| CN108878369A (en) * | 2018-06-12 | 2018-11-23 | 北京工业大学 | A kind of compound semiconductor device and preparation method thereof based on epitaxial growth |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11251216A (en) * | 1998-02-27 | 1999-09-17 | Sharp Corp | Preparation of mask pattern, aligner, gain-coupled distributed feedback-type laser, and optical transmission system |
| US5956572A (en) * | 1996-08-26 | 1999-09-21 | Sharp Kabushiki Kaisha | Method of fabricating integrated thin film solar cells |
| JP2004128187A (en) * | 2002-10-02 | 2004-04-22 | Sony Corp | Semiconductor element, semiconductor device and manufacturing method thereof |
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- 2004-07-26 CN CNB2004100403066A patent/CN100361308C/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5956572A (en) * | 1996-08-26 | 1999-09-21 | Sharp Kabushiki Kaisha | Method of fabricating integrated thin film solar cells |
| JPH11251216A (en) * | 1998-02-27 | 1999-09-17 | Sharp Corp | Preparation of mask pattern, aligner, gain-coupled distributed feedback-type laser, and optical transmission system |
| JP2004128187A (en) * | 2002-10-02 | 2004-04-22 | Sony Corp | Semiconductor element, semiconductor device and manufacturing method thereof |
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