CN100359556C - Source driver of built-in detecting circuit and its detecting method - Google Patents
Source driver of built-in detecting circuit and its detecting method Download PDFInfo
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- CN100359556C CN100359556C CNB2004100747181A CN200410074718A CN100359556C CN 100359556 C CN100359556 C CN 100359556C CN B2004100747181 A CNB2004100747181 A CN B2004100747181A CN 200410074718 A CN200410074718 A CN 200410074718A CN 100359556 C CN100359556 C CN 100359556C
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Abstract
The present invention relates to a source driver of a built-in detecting circuit and a detecting method thereof. The source driver is used for a thin film transistor liquid crystal display and comprises N drive units and P test units, wherein each drive unit is used for respectively receiving a digital information and producing an analog output signal according to the digital information; each test unit is used for respectively receiving output signals of M drive units and selecting one of the output signals as a test signal according to a selection signal. When the voltage of the testing signal is higher than a high reference voltage or lower than a low reference voltage, the test unit outputs an abnormal state signal to an external test machine, and the test machine produces test result according to the state signal. The test unit comprises a multitask unit, a first comparator, a second comparator and a judgment unit.
Description
Technical field
The invention relates to a kind of source electrode driver of Thin Film Transistor-LCD, particularly about a kind of source electrode driver and method of testing thereof of Thin Film Transistor-LCD of built-in detecting circuit.
Background technology
The source electrode driver (Source Driver) of present LCD, its volume production test (MassProduction Test) is to utilize test machine (Tester) to finish test and screening.
Fig. 1 shows a known source electrode driver.This source electrode driver 10 comprises N driver element 11.Each driver element 11 comprises an accurate adjustment unit (level shifter) 111, one digital analog converter (Digital to Analog Converter, DAC) 112 and one impact damper (unitgain buffer) 113.Each driver element 11 receives a numerical data.This numerical data is sent to digital analog converter 112 after adjusting via the accurate adjustment unit 111 in position.The output signal of digital analog converter 112 is by impact damper 113 outputs one analog output signal.Therefore, general source electrode driver can produce output signal S (1)～S (N).
Fig. 2 shows the synoptic diagram of the test machine of a known source electrode driver.Test machine (Tester) 20 is used for source electrode driver 10 is done test and screening.General test machine 20 comprises P test module 21, and each test module 21 comprises a multiplexer (Multiplexier) 211 and an analog-digital converter (Analog to Digital Converter, ADC) 212.Multiplexer 211 receives M analog output signal S (1)～S (m).Must notice that the number M of the analog output signal that the number P of test module 21, multiplexer 211 receive and the number N of driver element 11 must satisfy the condition of P*M 〉=N.
In this example, N analog output signal S (1)～S (N) that test machine 20 reception sources drivers 10 are exported.And receive output signal S (the 1)～S (m) of M driver element respectively by the multiplexer 211 of P test module 21.Then multiplexer 211 is chosen as this analog output signal S (1)～S (m) in regular turn test signal, and test signal is sent to analog-digital converter 212 by the control of selecting signal.Analog-digital converter 212 is converted to numerical data with test signal.The numerical data that last test machine 20 is produced according to each analog-digital converter 212 is analyzed and is judged whether the output voltage of source electrode driver 10 is up to specification.Mode according to this can intactly test out the characteristic of source electrode driver.
Yet source electrode driver 10 has 300～500 output connecting pins usually, and just the number N of driver element 11 approximates 300～500.So test machine 20 also must have enough inputs.Just satisfy above-mentioned P*M 〉=N, test machine 20 just can support to measure so many output.Therefore test the number P of input pin number M with the test module 21 of module 21, must increase along with the number N of driver element 11 and increase.So, caused the wiring volume of test machine 20 total input pins and the number of test module 21 to increase, made board integral body build and put the volume increase.And in order to reach the measurement of high precision, analog-digital converter 212 also must have high precision (High Resolution).So caused costing an arm and a leg of test machine 20.For these reasons, cause the testing cost of the source electrode driver 10 of LCD to remain high.
In sum, how to make the decreased number of the wiring volume and the test module 21 of test machine 20 total input pins, make board integral body build and put volume decline, and can reach the measurement of high precision, reducing the price of test machine 20 simultaneously, is a urgent problem in fact.
Summary of the invention
The object of the present invention is to provide a kind of source electrode driver of Thin Film Transistor-LCD of built-in detecting circuit, and the number of the wiring volume of total input pin of solution test machine and test module increases, and makes test machine integral body build and puts the problem that volume increases.
Another object of the present invention is to provide a kind of source electrode driver of Thin Film Transistor-LCD of built-in detecting circuit, and can reach the measurement of high precision, solve the expensive problem of test machine simultaneously.
For reaching above-mentioned purpose, the invention provides a kind of source electrode driver of Thin Film Transistor-LCD of built-in detecting circuit, it comprises N driver element and P test cell.Each driver element is to receive a numerical data respectively, and produces the analog output signal of a correspondence according to this numerical data.And each test cell is the output that receives M driver element, and selects signal to select the output signal of one of them driver element as test signal according to one.When the voltage of this test signal was higher than a high reference voltage or be lower than a low reference voltage, the unusual status signal of test cell output representative was given test machine.
Wherein, test cell more comprises a multiplexer, one first comparer, one second comparer and a judging unit.Multiplexer is the output signal that receives M driver element, and exports the output signal of one of them driver element as test signal according to aforementioned selection signal.First comparer is acceptance test signal and high reference voltage, and compare test signal and high reference voltage height, and the result is passed to judging unit by one first comparison signal.Second comparer is acceptance test signal and low reference voltage, and compare test signal and low reference voltage height, and the result is passed to judging unit by one second comparison signal.Judging unit, be to receive aforementioned first comparison signal and aforementioned second comparison signal, when test event signal is higher or lower than low reference voltage than high reference voltage, first comparer or second comparer will inform that the judging unit test signal has unusually, and judging unit will be exported the unusual state output signal of representative to test machine.When test event signal is lower and higher than low reference voltage than high reference voltage, judging unit will be exported the normal state output signal of representative and give test machine.Test machine can learn whether test signal satisfies the requirement of specification (Spec) after the output that receives judging unit.
The present invention provides a kind of method of testing of source electrode driver of Thin Film Transistor-LCD in addition, and this source electrode driver is to receive N numerical data and produce N analog output signal, and this method of testing is to comprise the following step: the initial value G that sets the GTG value; The numerical data on input GTG value G rank; Producing reference voltage, is high reference voltage and the low reference voltage that produces corresponding to aforementioned GTG value G rank; Produce one and select signal, this selection signal selects an analog output signal as test signal; Comparison step is whether the voltage of comparison of aforementioned test signal is lower than aforementioned high reference voltage and is higher than aforementioned low reference voltage; When the voltage of aforementioned test signal is higher than aforementioned high reference voltage or be lower than aforementioned low reference voltage,, and finish test with a bad alarm signal activation; When the voltage of aforementioned test signal is not higher than aforementioned high reference voltage and be not lower than aforementioned low reference voltage, then change aforementioned selection signal and select another analog output signal as test signal, and the aforementioned comparison step of rebound; All tested when all analog output signals and to have finished, then changed GTG value G, and the aforementioned generation reference voltage of rebound step; All tested when all GTG values and to have finished, then finished.
The present invention also provides a kind of method of testing of source electrode driver of Thin Film Transistor-LCD, and this source electrode driver is to receive N numerical data and produce N analog output signal, is to comprise the following step: the initial value G that sets the GTG value; The numerical data on input GTG value G rank; Producing high reference voltage, is the high reference voltage that produces corresponding to aforementioned GTG value G rank; Produce one and select signal, this selection signal selects an analog output signal as test signal; First comparison step is whether the voltage of comparison of aforementioned test signal is higher than aforementioned high reference voltage; When the voltage of aforementioned test signal is higher than aforementioned high reference voltage,, and finish test with a bad alarm signal activation; Producing low reference voltage, is the low reference voltage that produces corresponding to aforementioned GTG value G rank; Second comparison step is whether the voltage of comparison of aforementioned test signal is lower than aforementioned low reference voltage; When the voltage of aforementioned test signal is lower than aforementioned low reference voltage,, and finish test with a bad alarm signal activation; When the voltage of aforementioned test signal was not higher than aforementioned high reference voltage and be not lower than aforementioned low reference voltage, then the aforementioned generation of rebound was high with reference to voltage steps, and changed aforementioned selection signal and select another analog output signal as test signal; All tested when all analog output signals and to have finished, then change GTG value G, and the aforementioned high reference voltage of rebound has produced step; All tested when all GTG values and to have finished, then finished.
The source electrode driver of the Thin Film Transistor-LCD of built-in detecting circuit of the present invention by being built in the test cell in the source electrode driver, makes M input pin of test cell, can utilize the mode of P.e.c. to be provided with.Thereby reduced known test module and increased a large amount of wiring volumes accounted for because of the number M of input pin.And, can roll up the number M of input pin, and only need occupy a little volume, and can reduce the number P of test cell, to satisfy the condition of P*M 〉=N because the input pin utilizes the mode of P.e.c. to be provided with.
Therefore, solve building of test machine and put the problem that volume increases.
Use because of the collocation that utilizes first comparer, second comparer and judging unit again, and analyze the requirement whether this test signal satisfies specification (spec), thereby replaced expensive test machine, reach the effect that reduces cost.
Description of drawings
Fig. 1 is a known source electrode driver;
Fig. 2 is a known test machine;
Fig. 3 A one uses the test structure of source electrode driver integral body of the Thin Film Transistor-LCD of built-in detecting circuit of the present invention;
Fig. 3 B is the calcspar of first embodiment of the test cell of Fig. 3 A;
Fig. 4 is one according to a kind of judging unit of the present invention;
Fig. 5 is that another is according to a kind of judging unit of the present invention;
Fig. 6 is a method of testing according to the source electrode driver of a kind of Thin Film Transistor-LCD of the present invention;
Fig. 7 is the calcspar of second embodiment of the test cell of Fig. 3 A;
Fig. 8 A and Fig. 8 B are another method of testing according to the source electrode driver of a kind of Thin Film Transistor-LCD of the present invention.
Symbol description:
10～known source electrode driver
11～driver element
The accurate adjustment unit in 111～position
112～digital analog converter
113～impact damper
20～test machine
21～test module
211～multiplexer
212～analog-digital converter
The source electrode driver of 30～built-in detecting circuit
31,71～test cell
311,711～multiplexer
312,313,712～the first comparers
314,714～judging unit
33～test machine
41,51,53～NOT door
42～NAND door
52～NOR door
Embodiment
Describe the source electrode driver of the Thin Film Transistor-LCD of built-in detecting circuit of the present invention in detail below with reference to Figure of description, and components identical will be with identical symbology.
Fig. 3 A shows the test structure of the source electrode driver integral body of the Thin Film Transistor-LCD that uses built-in detecting circuit of the present invention.This test structure comprises N driver element 11, a P test cell 31 and a test machine 33.N driver element 11 receives a numerical data respectively, and produces an analog output signal S (1)～S (N) respectively according to this numerical data.Each test cell 31 receives the output signal of M driver element, and selects one of them output signal as test signal according to a selection signal, and exports a status signal.When this test signal was higher than a high reference voltage Vmax (G) or be lower than a low reference voltage Vmin (G), the status signal of test cell 31 was an error condition.Last test machine 33 only needs to export a test signal according to the state of each status signal, represents corresponding to the driver element of this test signal up to specification.The control signal of test machine 33 comprise select signal, the low reference voltage Vmin (G) of high reference voltage Vmax (G), with the stage control signal.The action of driver element 11 and framework, identical with the driver element 11 of Fig. 1, no longer repeat specification.
Fig. 3 B shows first embodiment of test cell of the Thin Film Transistor-LCD of a kind of built-in detecting circuit of the present invention.Test cell 31 comprises a multiplexer 311, one first comparer 312, one second comparer 313 and a judging unit 314.This multiplexer 311 receives output signal S (the 1)～S (m) of M driver element, and according to selecting signal to export output signal S (the 1)～S (m) of one of them driver element, as a test signal.First comparer 312 is the acceptance test signal and the first reference voltage signal Vref_1, and the output first comparison signal Comp_1 behind the magnitude of voltage of the compare test signal and the first reference voltage signal Vref_1.The magnitude of voltage of the first reference voltage signal Vref_1 is defined as high reference voltage Vmax (G).Second comparer 313 is the acceptance test signal and the second reference voltage signal Vref_2, and the output second comparison signal Comp_2 behind the magnitude of voltage of the compare test signal and the second reference voltage signal Vref_2.The magnitude of voltage of the second reference voltage signal Vref_2 is defined as low reference voltage Vmin (G).Judging unit 314 is to receive the first comparison signal Comp_1 and the second comparison signal Comp_2, and produces status signal according to its state.When the high reference voltage Vmax of the voltage ratio of test event signal (G) was high, then the first comparison signal Comp_1 was H, otherwise the first comparison signal Comp_1 is L.When the low reference voltage Vmin (G) of the voltage ratio of test event signal was low, the second comparison signal Comp-_2 was L, otherwise the second comparison signal Comp_2 is H.Therefore, be that the H or the second comparison signal Comp_2 are L as long as judging unit 314 detects the first comparison signal Comp_1, then will represent the status signal of abnormality to give test machine 33.Therefore, test machine 33 can receive the status signal of being exported by judging unit 314, so as to judging the scope whether this test signal exceeds high reference voltage Vmax (G) and low reference voltage Vmin (G), and learn whether this test signal satisfies the requirement of specification (spec).That is, when the signal of being exported when judging unit 314 is the status signal of representative abnormality, represent that the pairing driver element of this test signal 11 is bad.
Fig. 4 shows a kind of embodiment of judging unit.This judging unit 314 is to receive the first comparison signal Comp_1 and the second comparison signal Comp_2, and produces status signal.This judging unit 314 comprises a NOT door 41 and a NAND door 42.The input end of NOT door 41 receives the first comparison signal Comp_1, and its output terminal is connected to an input end of NAND door 42.Another input end of NAND door 42 receives the second comparison signal Comp_2.Therefore, if the first comparison signal Comp_1 is the L and the second comparison signal Comp_2 when being H, NAND door 42 is output as H.And when the first comparison signal Comp_1 be the H or the second comparison signal Comp_2 when being L, the status signal that NAND door 42 is exported is L, represents abnormality.
Fig. 5 shows another embodiment of judging unit.Judging unit 314 comprises one the one NOT door 51, a NOR door 52 and one the 2nd NOT door 53.The input end of the one NOT door 51 receives the second comparison signal Comp_2, and its output terminal is connected to an input end of NOR door 52.Another input end of NOR door 52 receives the first comparison signal Com_1, and its output terminal is connected to the input end of the 2nd NOT door 53.Therefore, in this embodiment so long as the first comparison signal Com_1 is that the H or the second comparison signal Comp_2 are L, then the status signal exported of judging unit 314 is L, represents abnormality.
Must attention person, the number M of the analog output signal that the number P of test cell 31, multiplexer 311 receive, with the number N of driver element 11, must satisfy the condition of P*M 〉=N.
In the present embodiment, because only need utilize the collocation utilization of one first comparer 312, one second comparer 313 and a judging unit 314, can analyze the requirement of whether satisfying specification (spec) corresponding to the driver element of this test signal, and the test machine of the costliness of replacement known techniques, so this case has reached the effect that reduces cost.
Fig. 6 shows the method for testing of the source electrode driver of a kind of Thin Film Transistor-LCD of the present invention.Source electrode driver 30 receives N numerical data, and behind over-drive unit and test cell, the unusual or normal status signal of output representative is given test machine.This method of testing comprises the following step:
Step S602: beginning.
Step S604: the initial value G=0 that sets the GTG value.The resolution of GTG value can be decided by the bit number of numerical data, the numerical data of 10 bits for example, and its GTG value is 0～1023.
Step S606: the numerical data on input GTG value G rank.That is the numerical data on input GTG value G rank is to all driver elements 11.
Step S608: the high reference voltage Vmax (G) and low reference voltage Vmin (G) that produce GTG value G rank.Described high reference voltage and low reference voltage can be produced by test machine 33.
Step S610: produce one and select signal.This selection signal selects an analog output signal as test signal.Because each test cell is to receive M analog output signal, and each time point only can detect an analog output signal, so selects one of them analog output signal as test signal by this selection signal.This selects signal to be produced by test machine 33.
Step S612: whether the compare test signal is lower than high reference voltage Vmax (G) and is higher than low reference voltage Vmin (G).
Step S614: when test signal is higher than high reference voltage Vma x (G) or is lower than reference voltage Vmin (G), represent that test signal is bad and skip to step S622.And when test signal was lower than high reference voltage Vmax (G) and be higher than low reference voltage Vmin (G), the expression test signal was up to specification and skip to step S616.
Step S616: judge whether all analog output signals were all tested, if not, rebound S610 then.And all test when finishing when all analog output signals, then skip to step S618.
Step S618: judge that whether all GTG values all tested, if not, then skipped to S620.And all test when finishing when all GTG values, then skip to step S624.
Step S620: change GTG value G, and rebound step S606.For example, GTG value G is added 1 at every turn.
Step S622:, and skip to step S624 with a bad alarm signal activation.
Step S624: finish test.
Fig. 7 shows second embodiment of test cell of the Thin Film Transistor-LCD of a kind of built-in detecting circuit of the present invention.The framework of the test cell 31 of this test cell 71 and first embodiment is roughly the same, all comprise multiplexer, comparer and judging unit, its difference is that test cell 71 only comprises a comparer 712, and the mode of its comparison signal is divided into one first comparison phase and one second comparison phase.
When first comparison phase, a test signal and a reference voltage signal Vref that comparer 712 receives by multiplexer 711 outputs, this moment, the voltage of reference voltage signal Vref was high reference voltage Vmax (G), and the voltage of compare test voltage of signals and high reference voltage Vmax (G), the result is passed to judging unit 714 by a comparison signal Comp.When this test signal is not higher than high reference voltage Vmax (G), enter second comparison phase.When second comparison phase, reference voltage signal Vref is low reference voltage Vmin (G), and the voltage of compare test voltage of signals and low reference voltage Vmin (G) passes to judging unit 714 with the result by comparison signal Comp at this moment.Judging unit 714 is to learn that according to a stage control signal current stage is first comparison phase or second comparison phase, and the stage control signal can be provided by test machine 33.Therefore present embodiment can reduce the volume of source electrode driver, and reach the effect of dwindling source electrode driver by the number that reduces comparer, but its shortcoming is for being divided into two stage tests.
Moreover Fig. 8 A and Fig. 8 B show the method for testing of the source electrode driver of the test cell 71 that uses Fig. 7.Source electrode driver receives N numerical data, and behind over-drive unit and test cell, the unusual or normal status signal of output representative is given test machine.This method of testing comprises the following step:
Step S802: beginning.
Step S804: the initial value G=0 that sets the GTG value.The resolution of GTG value can be decided by the bit number of numerical data, the numerical data of 10 bits for example, and its GTG value is 0～1023.
Step S806: the numerical data on input GTG value G rank.That is the numerical data on input GTG value G rank is to all driver elements 11.
Step S808: producing high reference voltage, is the high reference voltage that produces GTG value G rank.This high reference voltage can be produced by test machine 33.
Step S810: produce one and select signal, it selects an analog output signal as test signal.This selects signal to be produced by test machine 33.
Step S812: for height with reference to voltage ratio than the stage, be whether the compare test signal is lower than high reference voltage.
Step S814: when test signal is higher than high reference voltage Vmax (G), represent badly, skip to step S826 corresponding to the driver element of this test signal.And when test signal is lower than high reference voltage Vma x (G), skip to step S816.
Step S816: producing low reference voltage, is the low reference voltage Vmin (G) that produces GTG value G rank.Should can produce by test machine 33 by low reference voltage.
Step S818: low reference voltage comparison phase is whether the compare test signal is higher than low reference voltage Vmin (G).
Step S820: when aforementioned test signal is lower than reference voltage Vmin (G), represent badly, skip to step S826 corresponding to the driver element of this test signal.And when aforementioned test signal is higher than low reference voltage Vmin (G), skip to step S822.
Step S822: judge whether all analog output signals were all tested, if not, rebound S808 then.And all test when finishing when all analog output signals, then skip to step S824.
Step S824: judge that whether all GTG values all tested, if not, then skipped to S828.And all test when finishing when all GTG values, then skip to step S830.
Step S826:, and skip to S830 end test with a bad alarm signal activation.
Step S828: change GTG value G, and rebound step S806.For example, GTG value G is added 1 at every turn.
Step S830: finish test.
Though more than with embodiment the present invention is described, but therefore do not limit scope of the present invention, only otherwise break away from main idea of the present invention, the sector person can carry out various distortion or change, for example the outlet line of a plurality of judging units can be connected,, and this group outlet line directly is pushed into pin (PAD) as 8 one group, or shift pin again onto through after some logical operations again, to reduce the number of pin.
Claims (11)
1, a kind of source electrode driver of built-in detecting circuit is to use in Thin Film Transistor-LCD, it is characterized in that the source electrode driver of described built-in detecting circuit comprises:
A plurality of driver elements are to receive a numerical data respectively, and produce an analog output signal according to this numerical data;
A plurality of test cells, be to receive at least one aforementioned output signal respectively, and select signal to select one of them output signal according to one as test signal, each test cell compare test signal and a high reference voltage and one hang down reference voltage, and export a status signal;
Wherein, when the voltage of this test signal is lower than aforementioned high reference voltage and be higher than aforementioned low reference voltage, with the aforesaid state signal sets is normal condition, and when the voltage of this test signal is higher than aforementioned high reference voltage or be lower than aforementioned low reference voltage, be abnormality with the aforesaid state signal sets.
2, the source electrode driver of built-in detecting circuit according to claim 1 is characterized in that each aforementioned test cell comprises:
One multiplexer is to receive at least one aforementioned output signal, and exports one of them output signal as aforementioned test signal according to aforementioned selection signal;
One first comparer is to receive aforementioned test signal and one first reference voltage signal, and the voltage of compare test signal and this first reference voltage signal, and produces one first comparison signal;
One second comparer is to receive aforementioned test signal and one second reference voltage signal, and the voltage of compare test signal and this second reference voltage signal, and produces one second comparison signal;
One judging unit is to receive aforementioned first comparison signal and second comparison signal, produces the aforesaid state signal.
3, the source electrode driver of built-in detecting circuit according to claim 2, it is characterized in that: if wherein the number M of the number P of aforementioned test cell, analog output signal that aforementioned multiplexer received and the number N of aforementioned driver element, must satisfy the condition of P*M 〉=N.
4, the source electrode driver of built-in detecting circuit according to claim 2 is characterized in that: the voltage of aforementioned first reference voltage signal is higher than aforementioned second reference voltage signal.
5, the source electrode driver of built-in detecting circuit according to claim 4, it is characterized in that: when the voltage of aforementioned test signal is higher than the voltage of aforementioned first reference voltage signal, aforementioned first comparison signal is L, when the voltage of aforementioned test signal was lower than the voltage of aforementioned second reference voltage signal, aforementioned second comparison signal was H.
6, the source electrode driver of built-in detecting circuit according to claim 5 is characterized in that aforementioned judging unit comprises:
One reverse logic door is to receive aforementioned first comparison signal;
One Sheffer stroke gate is output and aforementioned second comparison signal that receives aforementioned reverse logic door, and output aforesaid state signal.
7, the source electrode driver of built-in detecting circuit according to claim 5 is characterized in that aforementioned judging unit comprises:
One first reverse logic door is to receive aforementioned second comparison signal;
One rejection gate is output and aforementioned first comparison signal that receives the aforementioned first reverse logic door;
One second reverse logic door is the output signal that receives aforementioned rejection gate, and output aforesaid state signal.
8, the source electrode driver of built-in detecting circuit according to claim 1 is characterized in that aforementioned test cell comprises:
One multiplexer is to receive a plurality of aforementioned analog output signals, and exports one of them analog output signal as aforementioned test signal according to aforementioned selection signal;
One comparer is to receive an aforementioned test signal and a reference voltage signal, and exports a comparison signal;
One judging unit is to receive aforementioned comparison signal, and exports the aforesaid state signal according to the state of comparison signal;
Wherein, when the voltage of aforementioned reference voltage signal is aforementioned high reference voltage, if the voltage of test signal is higher than the voltage of reference voltage signal, then the aforesaid state signal is an abnormality, and when the voltage of this reference voltage signal is aforementioned low reference voltage, if the voltage of test signal is lower than the voltage of reference voltage signal, then the aforesaid state signal is an abnormality.
9, the source electrode driver of built-in detecting circuit according to claim 8, it is characterized in that: if wherein the number M of the number P of aforementioned test cell, analog output signal that aforementioned multiplexer received and the number N of aforementioned driver element, must satisfy the condition of P*M 〉=N.
10, a kind of method of testing of source electrode driver of built-in detecting circuit; this source electrode driver is to use in Thin Film Transistor-LCD; and N numerical data of reception; behind over-drive unit and test cell; unusual or the normal status signal of output representative is given test machine, and this method of testing is to comprise the following step:
Set the initial value G of GTG value;
The numerical data on input GTG value G rank;
Producing reference voltage, is high reference voltage and the low reference voltage that produces corresponding to aforementioned GTG value G rank;
Produce one and select signal, this selection signal selects an analog output signal as test signal;
Comparison step is whether the voltage of comparison of aforementioned test signal is lower than aforementioned high reference voltage and is higher than aforementioned low reference voltage;
When the voltage of aforementioned test signal is higher than aforementioned high reference voltage or be lower than aforementioned low reference voltage,, and finish test with a bad alarm signal activation;
When the voltage of aforementioned test signal is not higher than aforementioned high reference voltage and be not lower than aforementioned low reference voltage, then change aforementioned selection signal and select another analog output signal as test signal, and the aforementioned comparison step of rebound;
All tested when all analog output signals and to have finished, then changed GTG value G, and the aforementioned generation reference voltage of rebound step;
All tested when all GTG values and to have finished, then finished.
11, a kind of method of testing of source electrode driver of built-in detecting circuit; this source electrode driver is to use in Thin Film Transistor-LCD; and N numerical data of reception; behind over-drive unit and test cell; unusual or the normal status signal of output representative is given test machine, and this method of testing is to comprise the following step:
Set the initial value G of GTG value;
The numerical data on input GTG value G rank;
Producing high reference voltage, is the high reference voltage that produces corresponding to aforementioned GTG value G rank;
Produce one and select signal, this selection signal selects an analog output signal as test signal;
First comparison step is whether the voltage of comparison of aforementioned test signal is higher than aforementioned high reference voltage;
When the voltage of aforementioned test signal is higher than aforementioned high reference voltage,, and finish test with a bad alarm signal activation;
Producing low reference voltage, is the low reference voltage that produces corresponding to aforementioned GTG value G rank;
Second comparison step is whether the voltage of comparison of aforementioned test signal is lower than aforementioned low reference voltage;
When the voltage of aforementioned test signal is lower than aforementioned low reference voltage,, and finish test with a bad alarm signal activation;
When the voltage of aforementioned test signal was not higher than aforementioned high reference voltage and be not lower than aforementioned low reference voltage, then the aforementioned generation of rebound was high with reference to voltage steps, and changed aforementioned selection signal and select another analog output signal as test signal;
All tested when all analog output signals and to have finished, then change GTG value G, and the aforementioned high reference voltage of rebound has produced step;
All tested when all GTG values and to have finished, then finished.
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| KR100843148B1 (en) * | 2006-12-22 | 2008-07-02 | 삼성전자주식회사 | Liquid crystal display, connector for testing liquid crystal display and test method thereof |
| CN101430849B (en) * | 2007-11-09 | 2010-12-08 | 奇景光电股份有限公司 | Test device for display driving circuit |
| CN101452680B (en) * | 2007-12-03 | 2010-12-01 | 奇景光电股份有限公司 | Display driver with built-in test circuit and test method thereof |
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