CN100359399C - Manufacture of thin-membrane transistor of liquid crystal displaying device - Google Patents
Manufacture of thin-membrane transistor of liquid crystal displaying device Download PDFInfo
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- CN100359399C CN100359399C CNB2005100059612A CN200510005961A CN100359399C CN 100359399 C CN100359399 C CN 100359399C CN B2005100059612 A CNB2005100059612 A CN B2005100059612A CN 200510005961 A CN200510005961 A CN 200510005961A CN 100359399 C CN100359399 C CN 100359399C
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Abstract
The present invention relates to a method for manufacturing a thin film transistor of a liquid crystal display. The method comprises: a transparent conducting layer, a first metallic layer, a first insulating layer, a semiconductor layer and a second metallic layer are orderly deposited on a substrate; parts of the second metallic layer, the semiconductor layer, the first insulating layer, the first metallic layer and the transparent conducting layer are removed by a first micro shadow etching technique so as to form a source electrode, a drain electrode and a channel region; a second insulating layer is deposited, and parts of the second insulating layer are removed by a second micro shadow etching technique so as to form a plurality of contact holes. A third metallic layer is deposited, the source electrode and the drain electrode are electrically connected with wires, and parts of the third metallic layer are removed by a third micro shadow etching technique.
Description
Technical field
The invention provides a kind of method of making the arranged assembly, refer to the method for a kind of manufacturing Thin Film Transistor-LCD (TFT-LCD) especially.
Background technology
Along with making rapid progress of science and technology, information products also develop towards miniaturization, high-level efficiency and the direction that is convenient for carrying gradually, and wherein display device has more been played the part of a very important pivotal player.In recent years, display device has considerable progress on improving quality, increase area and reducing cost.Generally speaking, that LCD has is in light weight, power consumption is few and the advantage of low radiation or the like, therefore, LCD has been widely used in multiple on the market portable information product, for example (personaldigital assistant PDA) waits commodity for notebook computer (notebook) and personal digital assistant.In addition, liquid crystal display and LCD TV are also popularized gradually, replace cathode-ray tube (CRT) (cathode ray tube, CRT) display and TV that tradition is used.Therefore, how to improve the output of LCD effectively, and reduce manufacturing cost, reality has become a present important topic.
No matter be traditional stable twisted nematic LCD (TN-LCD), or the wide-angle liquid crystal display of popularizing gradually recently, for example LCD with transverse electric field (IPS-LCD) or multiple domain vertical alignment liquid crystal display (MVA-LCD) all are to use switch module to control image and switch.(Thin Film Transistor TFT) is a kind of switch module commonly used to thin film transistor (TFT), and it has comprised gate electrode, source electrode, drain electrode and other necessary semiconductor layer and insulation course (insulating layer).And the manufacturing process of whole LCD often also depends on the manufacturing step of thin film transistor (TFT), and the manufacturing step of therefore simplifying thin film transistor (TFT) can reduce the manufacturing cost of LCD effectively.
Method for fabricating thin film transistor in the known LCD is to utilize four roads or five road light shields to finish.The necessary assembly that constitutes thin film transistor (TFT) has comprised gate electrode, source electrode, drain electrode and passage area, and in order to make these necessary assemblies, must carry out some and fix and can't the abridged processing step.Yet, maturation along with semi-transparent little shadow technology (halftonephotolithograph), lithography technology can only use one light shield to form the photoresist layer of different-thickness, and the semi-transparent little shadow technology of this kind also makes the manufacturing process of reduction thin film transistor (TFT) become possibility.
Summary of the invention
Therefore fundamental purpose of the present invention is to provide a kind of method of manufacturing thin film transistor, and it can simplify above-mentioned known manufacturing process.
According to an aspect of the present invention, provide a kind of method of making the thin film transistor (TFT) of LCD.This method elder generation is deposit transparent conductive layer, the first metal layer, first insulation course, semiconductor layer and second metal level on substrate successively.Then, carry out the first lithography technology again and remove part second metal level, semiconductor layer, first insulation course, the first metal layer and transparency conducting layer, to form source electrode, drain electrode and passage area.Afterwards, deposit second insulation course, and carry out the second lithography technology and remove part second insulation course, to form a plurality of contact holes.At last, deposit the 3rd metal level, source electrode and drain electrode are electrically connected with other wiring, and carry out the 3rd lithography technology to remove part the 3rd metal level.The first lithography technology comprises the first semi-transparent lithography process, and the first semi-transparent lithography process can form first photoresist layer and second photoresist layer on second metal level.
According to a further aspect in the invention, provide a kind of method of making LCD.This method elder generation is deposit transparent conductive layer, the first metal layer, first insulation course, semiconductor layer and second metal level on substrate successively.Then, carry out the first lithography technology again and remove part second metal level, semiconductor layer, first insulation course, the first metal layer and transparency conducting layer, with formation sweep trace and common electric voltage line, and definition source/drain region, passage area and pixel electrode area.Afterwards, deposit second insulation course, and carry out the second lithography technology and remove part second insulation course, semiconductor layer, first insulation course and the first metal layer, to form a plurality of contact holes and to expose the partially transparent conductive layer.At last, deposit the 3rd metal level, and carry out the 3rd lithography technology, with formation data line and capacitor regions, and electrical connection source/drain region and pixel electrode area.The first lithography technology comprises the first semi-transparent lithography process, and the first semi-transparent lithography process can form first photoresist layer and second photoresist layer on second metal level.
Compared to the method for manufacturing thin film transistor of known LCD, the present invention has the advantage that can simplify manufacturing process.With the manufacturing process of LCD, required light shield number can be reduced to three road light shields by four present roads or five road light shields.Therefore, the present invention can reduce the manufacturing cost of Thin Film Transistor-LCD effectively.
Description of drawings
Fig. 1 is the synoptic diagram of LCD of the present invention;
Fig. 2 to Fig. 7 is the manufacturing process synoptic diagram of first preferred embodiment of the invention;
Fig. 8 to Fig. 9 is the manufacturing process synoptic diagram of second preferred embodiment of the invention.
Embodiment
Please refer to Fig. 1, Fig. 1 is the synoptic diagram of a LCD 10.LCD 10 has comprised multi-strip scanning line 12, many data lines 14, a plurality of switch module 16 and a plurality of pixel electrodes 18, wherein each switch module 16 connects a corresponding scanning line 12 and corresponding data line 14, and the charging that is used for controlling corresponding pixel electrode whether.
Refer again to Fig. 2 to Fig. 7, Fig. 2 to Fig. 7 has at large described the manufacturing process of LCD 10 of the present invention.In first preferred embodiment of the present invention, a transparent substrates 20 is provided earlier, then as shown in Figure 3, deposit transparent conductive layer 22, the first metal layer 24, first insulation course 26, semiconductor layer 28 and second metal level 30 on substrate 20 successively.After deposition is finished, carry out the first lithography technology together again.The first lithography technology comprises the photoresist layer that carries out one first semi-transparent lithography process and form two different-thickness, for example first photoresist layer 32 and second photoresist layer 34.When carrying out the first semi-transparent lithography process, can use light shield of electron beam or laser radiation with slit pattern, wherein slit pattern is to define according to electron beam or Wavelength of Laser, forms different-thickness with the different parts at photoresist layer.Carry out after the first semi-transparent lithography process, photoresist layer can form the zone of first photoresist layer 32 and 34 two different-thickness of second photoresist layer, and then as shown in Figures 2 and 3, carry out second metal level 30, semiconductor layer 28, first insulation course 26, the first metal layer 24 and the transparency conducting layer 22 of first etch process removal part together, to form sweep trace 60 and common electric voltage line 62.Then, second photoresist layer 34 is removed, and carry out second metal level 30 that second etch process is removed part, with the source of defining/drain region 64, passage area 66 and pixel electrode area 68.
Please refer to Fig. 4 and Fig. 5.After the first lithography technology finishes, then deposit second insulation course 36 and carry out the second lithography technology.At first, carry out the second semi-transparent lithography process together,, be used for defining the pattern of second insulation course 36 to form the 3rd photoresist layer 38 and the 4th photoresist layer 39.Then, the second lithography technology is utilized the 3rd etch process together again, removes not by part second insulation course 36, semiconductor layer 28, first insulation course 26 and the first metal layer 24 of the 3rd photoresist layer 38 and 39 coverings of the 4th photoresist layer.Then, remove the 4th photoresist layer 39, and remove second insulation course 36 of part, to form a plurality of contact holes 70.After the second lithography technology, partially transparent conductive layer 22 can be exposed, the zone that is exposed conforms to the pattern of pixel electrode area 68, and two contact holes 70 then are to be arranged on second metal level 30 that source/drain region 64 is exposed.
Please refer to Fig. 6 and Fig. 7.Finish after the second lithography technology, deposit the 3rd metal level 40 and protective seam 41, and then carry out the 3rd lithography technology.At first, form the 3rd metal level 40, protective seam 41 and the 5th photoresist layer 42, carry out one the 4th etch process again and remove part the 3rd metal level 40 and protective seam 41, to form data line 72, conductive region 74 and capacitor regions 76.Data line 72 is electrically connected with source/drain region 64 via a contact hole 70, and conductive region 74 then is via another contact hole 70 and source/drain region 64 and pixel electrode area 68 conductings.As shown in Fig. 6 and Fig. 7, the edge of two pixel electrode area 68 lays respectively at the both sides of common electric voltage line 62, and is coated with second insulation course 36 on the common electric voltage line 62.The 3rd metal level 40 is crossed over common electric voltage lines 62, is electrically connected two pixel electrode area 68, not only can two pixel electrode area 68 of conducting, and the line ball 62 formation capacitor regions 76 of can also switching on together.In addition, the 3rd metal level 40 can also be in the position of contact mat 78, and according to the demand conducting the first metal layer 24 and second metal level 30, wherein contact mat 78 is used for being electrically connected with driving circuit, chip for driving or common electric voltage.
Manufacture method of the present invention also can be changed again.In second preferred embodiment below, the first lithography technology is similar to above-mentioned first preferred embodiment, but the second lithography technology and the 3rd lithography technology are then slightly different.
Please refer to Fig. 8.After finishing the first lithography technology, deposit second insulation course 36 and carry out the second different lithography technology.When carrying out the second lithography technology, only form the pattern that the 3rd photoresist layer 38 defines second insulation course 36.The second lithography technology utilization is the 5th etch process together, removes not by part second insulation course 36, semiconductor layer 28, first insulation course 26 and the first metal layer 24 of the 3rd photoresist layer 38 or 32 coverings of second metal level.The 5th etch process uses the chemical solution with high selectivity, removes the first metal layer 24 and keeps second metal level 30.Because the difference of the first metal layer 24 and second metal level, 30 chemical characteristics, the solution of selecting for use can only react with the first metal layer 24.After carrying out the second lithography technology, partially transparent conductive layer 22 can be exposed, the zone that is exposed conforms to the pattern of pixel electrode area 68, and two contact holes 70 then are to be arranged on second metal level 30 that source/drain region 64 is exposed.
Refer again to Fig. 9.Finish after the second lithography technology, deposit the 3rd metal level 40 and protective seam 41, and then carry out the 3rd lithography technology.At first, form the 3rd metal level 40, protective seam 41 and the 5th photoresist layer 42, carry out one the 6th etch process again and remove part the 3rd metal level 40 and protective seam 41, to form data line 72, conductive region 74 and capacitor regions 76.
Above-mentioned preferred embodiment illustrates with the manufacturing process of the Thin Film Transistor-LCD of TN type, and other for example STN, IPS or the manufacture method of the Thin Film Transistor-LCD of MVA type is also similar with above preferred embodiment.Compared to known manufacture method, the present invention can simplify manufacturing process effectively, reaches the purpose that reduces manufacturing cost.
The above only is the preferred embodiments of the present invention, all equal variations of doing according to claims of the present invention with repair this, all should belong to the covering scope of patent of the present invention.
Claims (19)
1, a kind of method of making the thin film transistor (TFT) of LCD, this method comprises:
A substrate is provided;
Transparency conducting layer of deposition, the first metal layer, first insulation course, semiconductor layer and second metal level on this substrate successively;
Carry out the first lithography technology and remove this second metal level of part, this semiconductor layer, this first insulation course, this first metal layer and this transparency conducting layer, to form a source electrode, a drain electrode and a passage area;
Deposit second insulation course, and carry out the second lithography technology and remove this second insulation course of part, to form a plurality of contact holes; And
Deposit the 3rd metal level this source electrode and this drain electrode are electrically connected with other wiring, deposit a protective seam and be used for protecting the 3rd metal level, and carry out the 3rd lithography technology to remove part the 3rd metal level and this protective seam.
2, the method for the thin film transistor (TFT) of manufacturing LCD as claimed in claim 1, wherein said substrate comprise a glass substrate, a quartz substrate or a plastic cement substrate.
3, the method for the thin film transistor (TFT) of manufacturing LCD as claimed in claim 1, wherein said the first metal layer, described second metal level and described the 3rd metal level comprise the alloy of tungsten, chromium, aluminium, copper, manganese or above-mentioned any metal.
4, the method for the thin film transistor (TFT) of manufacturing LCD as claimed in claim 1, wherein said transparency conducting layer comprises tin indium oxide or indium zinc oxide.
5, the method for the thin film transistor (TFT) of manufacturing LCD as claimed in claim 1, the wherein said first lithography technology comprises the first semi-transparent lithography process, and this first semi-transparent lithography process forms first photoresist layer and second photoresist layer on described second metal level.
6, the method for the thin film transistor (TFT) of manufacturing LCD as claimed in claim 1, the wherein said second lithography technology comprises the second semi-transparent lithography process.
7, the method for the thin film transistor (TFT) of manufacturing LCD as claimed in claim 1, the step of wherein carrying out the described second lithography technology also comprises:
Carry out the second semi-transparent lithography process, on described second insulation course, to form the 3rd photoresist layer and the 4th photoresist layer;
Remove not by described second insulation course of part, described semiconductor layer, described first insulation course and the described the first metal layer of the 3rd photoresist layer or the covering of the 4th photoresist layer;
Remove the 4th photoresist layer; And
Second insulation course of removing part is to form described contact hole.
8, the method for the thin film transistor (TFT) of manufacturing LCD as claimed in claim 1, the step of wherein carrying out the described second lithography technology also comprises:
On described second insulation course, form the 3rd photoresist layer; And
Remove not by described second insulation course of part, described semiconductor layer, described first insulation course and the described the first metal layer of the 3rd photoresist layer or the covering of described second metal level.
9, the method for the thin film transistor (TFT) of manufacturing LCD as claimed in claim 8, the wherein said second lithography technology comprises the wet etching process with high selectivity.
10, a kind of method of making LCD, this method comprises:
A substrate is provided;
Transparency conducting layer of deposition, the first metal layer, first insulation course, semiconductor layer and second metal level on this substrate successively;
Carry out the first lithography technology and remove this second metal level of part, this semiconductor layer, this first insulation course, this first metal layer and this transparency conducting layer, forming a sweep trace and a common electric voltage line, and form a source/drain region, a passage area and a pixel electrode area;
Deposit second insulation course, and carry out the second lithography technology and remove this second insulation course of part, this semiconductor layer, this first insulation course and this first metal layer, to form a plurality of contact holes and to expose this transparency conducting layer of part; And
Deposit the 3rd metal level and a protective seam, and carry out the 3rd lithography technology, to form a data line with a capacitor regions and be electrically connected this source/drain region and this pixel electrode area.
11, the method for manufacturing LCD as claimed in claim 10, wherein said substrate comprise a glass substrate, a quartz substrate or a plastic cement substrate.
12, the method for manufacturing LCD as claimed in claim 10, wherein said the first metal layer, described second metal level and described the 3rd metal level are by the alloy composition of tungsten, chromium, aluminium, copper, manganese or above-mentioned any metal.
13, the method for manufacturing LCD as claimed in claim 10, wherein said transparency conducting layer comprises tin indium oxide or indium zinc oxide.
14, the method for manufacturing LCD as claimed in claim 10, the wherein said first lithography technology comprises the first semi-transparent lithography process, and this first semi-transparent lithography process forms first photoresist layer and second photoresist layer on described second metal level.
15. the method for manufacturing LCD as claimed in claim 10, the wherein said second lithography technology comprises the second semi-transparent lithography process.
16, the method for manufacturing LCD as claimed in claim 10, the step of wherein carrying out the described second lithography technology also comprises:
Carry out the second semi-transparent lithography process, on described second insulation course, to form the 3rd photoresist layer and the 4th photoresist layer;
Remove not by described second insulation course of part, described semiconductor layer, described first insulation course and the described the first metal layer of the 3rd photoresist layer or the covering of the 4th photoresist layer;
Remove the 4th photoresist layer; And
Second insulation course of removing part is to form described contact hole.
17, the method for manufacturing LCD as claimed in claim 10, the step of wherein carrying out the described second lithography technology also comprises:
On described second insulation course, form the 3rd photoresist layer; And
Remove not by described second insulation course of part, described semiconductor layer, described first insulation course and the described the first metal layer of the 3rd photoresist layer or the covering of described second metal level.
18, the method for manufacturing LCD as claimed in claim 17, the wherein said second lithography technology comprises the wet etching process with high selectivity.
19, the method for manufacturing LCD as claimed in claim 10, wherein said the 3rd metal level are crossed over described common electric voltage line to be electrically connected two described pixel electrode area.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100059612A CN100359399C (en) | 2005-01-31 | 2005-01-31 | Manufacture of thin-membrane transistor of liquid crystal displaying device |
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| Application Number | Priority Date | Filing Date | Title |
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| CNB2005100059612A CN100359399C (en) | 2005-01-31 | 2005-01-31 | Manufacture of thin-membrane transistor of liquid crystal displaying device |
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| CN1645226A CN1645226A (en) | 2005-07-27 |
| CN100359399C true CN100359399C (en) | 2008-01-02 |
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| CNB2005100059612A Active CN100359399C (en) | 2005-01-31 | 2005-01-31 | Manufacture of thin-membrane transistor of liquid crystal displaying device |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6620719B1 (en) * | 2000-03-31 | 2003-09-16 | International Business Machines Corporation | Method of forming ohmic contacts using a self doping layer for thin-film transistors |
| CN1530716A (en) * | 2003-03-14 | 2004-09-22 | 友达光电股份有限公司 | Manufacture of low temperature polycrystal silicon film electric crystal LCD device |
| US20040235224A1 (en) * | 2003-05-20 | 2004-11-25 | Han-Tu Lin | Method for forming a thin film transistor of an organic light emitting display |
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2005
- 2005-01-31 CN CNB2005100059612A patent/CN100359399C/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6620719B1 (en) * | 2000-03-31 | 2003-09-16 | International Business Machines Corporation | Method of forming ohmic contacts using a self doping layer for thin-film transistors |
| CN1530716A (en) * | 2003-03-14 | 2004-09-22 | 友达光电股份有限公司 | Manufacture of low temperature polycrystal silicon film electric crystal LCD device |
| US20040235224A1 (en) * | 2003-05-20 | 2004-11-25 | Han-Tu Lin | Method for forming a thin film transistor of an organic light emitting display |
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| CN1645226A (en) | 2005-07-27 |
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