CN100356258C - Method for making metallic reflective layer of silicon based LCD device - Google Patents
Method for making metallic reflective layer of silicon based LCD device Download PDFInfo
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- CN100356258C CN100356258C CNB2003101229607A CN200310122960A CN100356258C CN 100356258 C CN100356258 C CN 100356258C CN B2003101229607 A CNB2003101229607 A CN B2003101229607A CN 200310122960 A CN200310122960 A CN 200310122960A CN 100356258 C CN100356258 C CN 100356258C
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- metallic reflector
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 20
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 20
- 239000010703 silicon Substances 0.000 title claims abstract description 20
- 238000000034 method Methods 0.000 title claims description 31
- 239000010410 layer Substances 0.000 claims abstract description 72
- 239000011241 protective layer Substances 0.000 claims abstract description 33
- 239000002184 metal Substances 0.000 claims abstract description 32
- 229910052751 metal Inorganic materials 0.000 claims abstract description 32
- 239000004973 liquid crystal related substance Substances 0.000 claims abstract description 14
- 238000005530 etching Methods 0.000 claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 7
- 150000001875 compounds Chemical class 0.000 claims description 25
- 239000000463 material Substances 0.000 claims description 15
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 10
- 239000004411 aluminium Substances 0.000 claims description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 9
- 229910052782 aluminium Inorganic materials 0.000 claims description 9
- 238000009413 insulation Methods 0.000 claims description 8
- 230000008021 deposition Effects 0.000 claims description 7
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 6
- 238000005498 polishing Methods 0.000 claims description 5
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- 238000001039 wet etching Methods 0.000 claims description 4
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 claims description 3
- 239000012895 dilution Substances 0.000 claims description 3
- 238000010790 dilution Methods 0.000 claims description 3
- 238000000059 patterning Methods 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- FGUUSXIOTUKUDN-IBGZPJMESA-N C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 Chemical compound C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 FGUUSXIOTUKUDN-IBGZPJMESA-N 0.000 claims 2
- 230000009931 harmful effect Effects 0.000 abstract description 3
- 230000000903 blocking effect Effects 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 230000009993 protective function Effects 0.000 abstract 1
- 230000001681 protective effect Effects 0.000 description 14
- 238000005516 engineering process Methods 0.000 description 7
- 230000004888 barrier function Effects 0.000 description 5
- 230000000452 restraining effect Effects 0.000 description 5
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- 238000005260 corrosion Methods 0.000 description 4
- 230000007797 corrosion Effects 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000003475 lamination Methods 0.000 description 4
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- 230000003139 buffering effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- -1 CMP compound Chemical class 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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Abstract
The present invention relates to a manufacturing method for a metal reflection layer of a silicon base liquid crystal display. An inner driving circuit layer and an insulating layer are orderly finished on a silicon wafer substrate, and then a metal reflection layer and a compounding-blocking protective layer are deposited; the etching pattern is carried out, and then the upper surface of the driving circuit layer can be exposed out; a metal dielectric layer is deposited on the compounding-blocking protective layer so as to be filled in a groove which is etched out, the CMP is carried out and is stopped on the upper surface of the compounding-blocking protective layer, the compounding-blocking protective layer is etched and removed, and then the upper surface of the metal reflection layer is exposed out. Because the present invention has a compounding-blocking protective layer with a double-layer structure of which the upper layer is hard but the lower layer is soft, the CMP stops when a blocking layer of which the upper layer is harder is met, and the protective layer of which the lower layer is softer can perform the protective function to the metal reflection layer. Thereby, the harmful effect of the CMP to the metal reflection layer is avoided, and the surface smoothness of the metal reflection layer is ensured; therefore, the LCOS of the metal reflection layer with high quality can be manufactured.
Description
Technical field
The present invention relates to technical field of semiconductors, specifically a kind of method for making of metallic reflector of liquid crystal on silicon (LCOS) display device.
Background technology
Liquid crystal on silicon (Liquid Crystal on Silicon, LCOS) be a kind of novel reflective LCD device, different with common liquid crystals is, LCOS directly realizes driving circuit in conjunction with CMOS technology on silicon chip, and adopt the CMOS technology that the active pixel matrix is produced on the silicon substrate, thereby has the little and high-resolution characteristic of size.The LCOS display device is made up of a lot of pixel (pixel) unit, is the primary structure of a LCOS pixel cell in the LCOS display device of prior art as shown in Figure 1: at first be layer-of-substrate silicon 101; Above the layer-of-substrate silicon 101 drive circuit layer 102, because of the present invention does not relate to the inner structure of driving circuit, so this one deck is repeated no more; Top again one deck is a metallic reflector 103, and metal wherein adopts aluminium usually; Metallic reflector top exists a space, and inside is filled with liquid crystal material 111, so this one deck is called as liquid crystal packed layer 104; Be glass-encapsulated layer 105 topmost.
Desirable LCOS should be smooth, smooth and very high reflectivity is arranged, can guarantee the consistance of good liquid crystal arrangement and thickness of liquid crystal layer like this, and non-warping light, it is smooth that this just needs that wherein metallic reflector must be suitable, can accurately control reflected light path, this is a very The key factor for high-end application such as projection TVs.
In U.S. Pat 6,437, structure of a kind of LCOS with a plurality of capacitors and preparation method thereof is disclosed in 839.The step of wherein making the aluminium reflection horizon as shown in Figure 2 comprises substantially: at first deposit the aluminium of one deck as metallic reflector on drive circuit layer; On this metal aluminium lamination, etch required pattern then; (Inter Metal Dielectric IMD) fills up the groove that etches to deposit dielectric layer between layer of metal again; By chemically mechanical polishing (Chemical Mechanical Polishing, CMP), the IMD layer that is deposited is carried out planarization process, the metallic reflector that exposes initial deposition, so just removed the above IMD material of metal level, only in the groove of metal aluminium lamination, remain with the IMD material of adequate thickness, thereby finished the making in reflection horizon.
But, in the above-mentioned technology,, cause reflectivity to reduce if, when being ground to layer on surface of metal, will on layer on surface of metal, cause cut by the IMD material on the CMP removal metal level; Some prior art also is added with one deck monox protective seam on the metal aluminium lamination, but when the CMP treatment step is ground to the monox protective seam that is positioned on the metal level, because of silica material softer, so the spherical recess (global dishing) that is caused by CMP will be reflected on the metallic reflector through the monox protective seam, and then cause the problem of metallic reflector surface irregularity, make the monox protective seam really not play a protective role; In a word, the process using CMP of prior art directly removes the IMD material or only adopts mono-layer oxidized silicon protective seam, all can produce adverse influence to the quality of metallic reflector.
Summary of the invention
In order to address the above problem, spy of the present invention provides a kind of method for making of liquid crystal on silicon (LCOS) display device, and purpose is to produce high-quality metallic reflector in LCOS technology.
To achieve these goals, technical scheme of the present invention is:
A kind of method for making of metallic reflector of liquid crystal on silicon (LCOS) display device is at first finished internal drive circuits and finish the making of insulation course on drive circuit layer on the silicon wafer substrate, this method also comprises the steps: then
A, on described insulation course deposition as the metal of metallic reflector;
B, deposit compound block protective layer on described metal level, described compound block protective layer is a double-decker, and it is hard layer at the middle and upper levels, and lower floor is a soft layer;
C, described compound block protective layer, metallic reflector and insulation course are carried out etching, realize patterning, and expose drive circuit layer upper surface;
D, at dielectric layer between plated metal on the described compound block protective layer, and fill the groove that etches;
E, described metal intermetallic dielectric layer is carried out chemically mechanical polishing, and stop at the upper surface of described compound block protective layer;
F, remove described compound block protective layer, expose the upper surface of metallic reflector by etching method.
Because the present invention has deposited compound block protective layer on metallic reflector, this compound block protective layer is last hard soft double-decker down, when wafer is carried out CMP, CMP just stops when running into harder restraining barrier, upper strata, and the softer protective seam of lower floor then can play a protective role to metallic reflector; And then adopt etching method to remove the restraining barrier, thus avoided the harmful effect of CMP to metallic reflector, guaranteed the surfacing of metallic reflector, thereby can produce LCOS with high-quality metallic reflector.
Description of drawings
Fig. 1 is the inner structure synoptic diagram of a pixel in the LCOS display device of prior art;
Fig. 2 makes the step of metallic reflector for prior art;
Fig. 3 makes the step of metallic reflector for the present invention;
Fig. 4 a～4f is the diagrammatic cross-section by the LCOS display device of the inventive method making.
Embodiment
Below in conjunction with Fig. 3 and Fig. 4, embodiments of the invention are described in detail.
Please see Figure shown in the 4a, in the process of preparation liquid crystal on silicon (LCOS) display device, at first on silicon wafer substrate, finish structures such as internal drive circuits, 401 layers among Fig. 4 a just comprise silicon base and driving circuit, 402 layers is insulation course, just begins to prepare metallic reflector 403 afterwards.
Please so at first be steps A simultaneously referring to the step synoptic diagram of Fig. 3, deposition one deck be as the metal of metallic reflector 403 on insulation course 402, and preferred metal material is aluminium (Al), but is not limited to aluminium.
Be step B then, this step is a key point of the present invention, promptly deposits one deck compound block protective layer on metallic reflector 403 again.This compound block protective layer comprises protective seam 404 and restraining barrier 405, is two-layer composite, at first is deposition layer protective layer 404 on metal level, and material is silicon dioxide (SiO
2), thickness is 500～2000 dusts; Then at SiO
2On the layer, deposition one deck restraining barrier 405, material is silicon nitride (Si3N4), its thickness is 100～4000 dusts normally.The thickness of silicon nitride layer should be able to satisfy the requirement that forms spacer (spacer) between electro-conductive glass in this LCOS structure and the metallic reflector.
Because the silicon nitride layer on upper strata is hard than the silicon oxide layer of lower floor, so, can play the effect that stops the CMP step at the middle and upper levels in the CMP process, and the effect of buffering can be played by lower floor, metallic reflector below protecting better; The effect that so just makes compound block protective layer to have to stop CMP has the effect of protection metallic reflector again; be unlikely to as conventional art, the spherical recess that forms in the CMP process caused the problem of metallic reflector surface irregularity through the monox protective seam.
Then be step C, shown in Fig. 4 b, in order to obtain being used for the metallic reflection layer pattern of each pixel, do to know as those skilled in the art, need on silicon nitride layer, to apply photoresist, develop, expose, utilize dry method or wet etch process then, realize patterning, the channel bottom that this pattern etched will expose the upper surface of drive circuit layer 401.
After this be step D, shown in Fig. 4 c, intermetallic dielectric (IMD) layer 406 that deposition one deck is thicker on compound block protective layer its objective is the space between the pattern on the metallic reflector 403 is filled.The material of this IMD layer is monox normally, can use high-density plasma (HDP) to deposit obtains, and should guarantee that the space between the metallic reflection layer pattern is filled fully, that is, wherein neither allow defectives such as cavity and will guarantee that the IMD material has enough thickness.
Step e; shown in Fig. 4 d; CMP technology by prior art; the IMD that will be positioned on the silicon nitride layer 405 grinds away; only keep the IMD in the space between the pattern, and lapped face is polished smooth, in polishing process; during harder silicon nitride layer 405, CMP technology stops in running into compound block protective layer.
Be step F then, the purpose of this step is that the CMP compound block protective layer of metallic reflector more than 403 all etched away, and exposes metallic reflector 403 at last.This step is specially: at first remove compound block protective layer silicon nitride layer 405 at the middle and upper levels by wet method or dry etching, shown in Fig. 4 e.When adopting wet etching, common employed mordant is the phosphoric acid solution of boiling, and for example 180 ℃ of following concentration is that 85% phosphoric acid can be as the selective corrosion agent of the relative monox of silicon nitride; Also can adopt dry etching.Removing protective seam then shown in Fig. 4 f is silicon oxide layer 404, can use wet method or dry etching equally; When adopting wet etching, employed mordant can be the hydrofluorite (HF) of dilution, wherein can also add ammonium fluoride (NH
4F), promptly obtain buffered hydrofluoric acid.Because the material of IMD layer is all SiO in this protective seam 404 and the space
2Thickness in order to ensure IMD material in the metallic reflection interlayer space, even can prevent by the mode of control etching period because excessive corrosion makes between the metallic reflection layer pattern IMD layer in the space cross thin penetrating, because keep under the constant situation SiO at etching condition
2Etch-rate also remain unchanged, so can control the etched degree of depth of IMD material in the space by the length of control etching period, guaranteeing exposing metallic reflector, and don't can be to the IMD material excessive corrosion between the metallic reflection layer pattern.For example, in the present embodiment, be the hydrofluorite (HF) of dilution if adopt the mordant of wet etching, wherein can also add ammonium fluoride (NH
4F), promptly obtain buffered hydrofluoric acid.
In addition, the present invention behind the CMP, the SiN layer before removing be between step e, the F also design a selectable SiO is arranged
2Dry etch step after the CMP polishing of having finished step e, can adopt the method for dry etching that residue IMD is corroded earlier, and then optionally remove compound block protective layer.With in like manner aforementioned,, also need adopt the mode of etching period control in order to prevent the IMD excessive corrosion.
It should be noted that the compound block protective layer in the present embodiment also can be other lamination layer structures, but wherein should comprise a hard layer at least.
After finishing the making of above-mentioned metallic reflector, also to carry out all the other processing procedures of LCOS certainly, because of little, so do not repeat them here with protection scope of the present invention relation.
Because the present invention has adopted compound block protective layer 404 and 405, this compound block protective layer is last hard soft double-decker down, when wafer is carried out CMP, just stop to carry out CMP when running into harder restraining barrier 405, upper strata, the softer protective seam 404 of lower floor then can play buffering, protective effect to metallic reflector; And then adopt etching method to remove compound block protective layer 404 and 405, thus avoided that CMP has guaranteed the surfacing of metallic reflector 403 to the harmful effect of metallic reflector 403 in the conventional art, improved the total quality of LCOS.
Although the present invention describes with reference to its specific preferred implementation, but it should be appreciated by those skilled in the art, under the situation that does not break away from the spirit and scope of the present invention that are defined by the following claims, can carry out the various modifications of form and details to it.
Claims (8)
1. the method for making of the metallic reflector of a liquid crystal on silicon (LCOS) display device at first finishing internal drive circuits on the silicon wafer substrate and finish the making of insulation course on drive circuit layer, is characterized in that this method also comprises the steps:
A, on described insulation course deposition as the metal of metallic reflector;
B, deposit compound block protective layer on described metal level, described compound block protective layer is a double-decker, and it is hard layer at the middle and upper levels, and lower floor is a soft layer;
C, described compound block protective layer, metallic reflector and insulation course are carried out etching, realize patterning, and expose drive circuit layer upper surface;
D, at dielectric layer between plated metal on the described compound block protective layer, and fill the groove that etches;
E, described metal intermetallic dielectric layer is carried out chemically mechanical polishing, and stop at the upper surface of described compound block protective layer;
F, remove described compound block protective layer, expose the upper surface of metallic reflector by etching method.
2. the method for claim 1 is characterized in that, also can add a dry etch step between described step e, f.
3. method as claimed in claim 1 or 2 is characterized in that, described hard layer is a silicon nitride layer, and described soft layer is a silicon dioxide layer.
4. as 3 described methods of claim, it is characterized in that the thickness of described hard layer is 100 to 4000 dusts, the thickness of described soft layer is 500 to 2000 dusts.
5. the method for claim 1 is characterized in that, the material of described metal intermetallic dielectric layer is a silicon dioxide.
6. the method for claim 1 is characterized in that, the metal of described metallic reflector is an aluminium.
7. method as claimed in claim 1 or 2 is characterized in that, the etching period among the step f is controlled, with the height of metal intermetallic dielectric layer in the control groove.
8. method as claimed in claim 7 is characterized in that, when step f adopts the mordant of wet etching to be buffered hydrofluoric acid, comprising the hydrofluorite (HF) and the ammonium fluoride (NH of dilution
4F).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2003101229607A CN100356258C (en) | 2003-12-30 | 2003-12-30 | Method for making metallic reflective layer of silicon based LCD device |
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| Application Number | Priority Date | Filing Date | Title |
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| CNB2003101229607A CN100356258C (en) | 2003-12-30 | 2003-12-30 | Method for making metallic reflective layer of silicon based LCD device |
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| CN1635413A CN1635413A (en) | 2005-07-06 |
| CN100356258C true CN100356258C (en) | 2007-12-19 |
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Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7474371B2 (en) | 2006-06-08 | 2009-01-06 | United Microelectronics Corp. | Method of improving the flatness of a microdisplay surface, liquid crystal on silicon (LCoS) display panel and method of manufacturing the same |
| CN100449365C (en) * | 2006-09-30 | 2009-01-07 | 中芯国际集成电路制造(上海)有限公司 | Manufacturing method for reflection mirror of silicon-based LCD device |
| CN101311802B (en) * | 2007-05-23 | 2010-05-19 | 中芯国际集成电路制造(上海)有限公司 | Silicon based LCD device, silicon based LCD device reflector and manufacture method |
| CN101315502B (en) * | 2007-05-28 | 2010-06-09 | 中芯国际集成电路制造(上海)有限公司 | Method for improving medium layer defect between micro-reflection mirrors and producing silicon based LCD |
| CN101315501B (en) * | 2007-05-28 | 2010-12-22 | 中芯国际集成电路制造(上海)有限公司 | Method for improving medium layer defect between micro-reflection mirrors and producing silicon based LCD |
| CN101330051B (en) * | 2007-06-21 | 2010-08-11 | 中芯国际集成电路制造(上海)有限公司 | Method for obtaining LCOS device using argentum and generated structure thereof |
| CN101398579B (en) * | 2007-09-30 | 2010-06-09 | 中芯国际集成电路制造(上海)有限公司 | Method for making micro reflector layer and silicon based LCD |
| CN101740497A (en) * | 2008-11-14 | 2010-06-16 | 联华电子股份有限公司 | Method for manufacturing microdisplay |
| CN102998818B (en) * | 2011-09-09 | 2015-07-15 | 扬升照明股份有限公司 | Display device |
| CN105097422B (en) * | 2014-05-07 | 2018-08-17 | 中芯国际集成电路制造(上海)有限公司 | A kind of reflection mirror of silicon-based LCD device and preparation method thereof |
| CN105807519A (en) * | 2016-05-20 | 2016-07-27 | 豪威半导体（上海）有限责任公司 | Silicon-based liquid crystal chip and display device |
| CN113224108B (en) * | 2020-02-05 | 2024-05-10 | 京东方科技集团股份有限公司 | Silicon-based OLED display panel, preparation method thereof and display device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0740188A2 (en) * | 1995-04-28 | 1996-10-30 | International Business Machines Corporation | A reflective spatial light modulator array |
| US5684551A (en) * | 1992-06-26 | 1997-11-04 | Sharp Kabushiki Kaisha | Reflective type liquid crystal display device with phase compensator and reflector with undulating surface |
| EP1024392A2 (en) * | 1999-01-26 | 2000-08-02 | Alps Electric Co., Ltd. | Reflection type liquid crystal display device and method for manufacturing the same |
| US6407784B1 (en) * | 1998-03-11 | 2002-06-18 | Nec Corporation | Reflection type liquid crystal display and method of fabricating the same |
-
2003
- 2003-12-30 CN CNB2003101229607A patent/CN100356258C/en not_active Expired - Lifetime
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5684551A (en) * | 1992-06-26 | 1997-11-04 | Sharp Kabushiki Kaisha | Reflective type liquid crystal display device with phase compensator and reflector with undulating surface |
| EP0740188A2 (en) * | 1995-04-28 | 1996-10-30 | International Business Machines Corporation | A reflective spatial light modulator array |
| US6407784B1 (en) * | 1998-03-11 | 2002-06-18 | Nec Corporation | Reflection type liquid crystal display and method of fabricating the same |
| EP1024392A2 (en) * | 1999-01-26 | 2000-08-02 | Alps Electric Co., Ltd. | Reflection type liquid crystal display device and method for manufacturing the same |
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| CN1635413A (en) | 2005-07-06 |
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