CN105807519A - Silicon-based liquid crystal chip and display device - Google Patents
Silicon-based liquid crystal chip and display device Download PDFInfo
- Publication number
- CN105807519A CN105807519A CN201610338838.0A CN201610338838A CN105807519A CN 105807519 A CN105807519 A CN 105807519A CN 201610338838 A CN201610338838 A CN 201610338838A CN 105807519 A CN105807519 A CN 105807519A
- Authority
- CN
- China
- Prior art keywords
- liquid crystal
- pixel electrode
- silicon chip
- described pixel
- display device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136277—Active matrix addressed cells formed on a semiconductor substrate, e.g. of silicon
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136213—Storage capacitors associated with the pixel electrode
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136218—Shield electrodes
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Liquid Crystal (AREA)
Abstract
The invention discloses a silicon-based liquid crystal chip. The silicon-based liquid crystal chip comprises a substrate and a plurality of pixel electrodes which are arranged on the substrate in an array form, wherein the transverse section of each pixel electrode is in an n-edge shape or a circular shape, wherein n is greater than or equal to 5, the perimeter of each pixel electrode is C1, the perimeter of a square with the same area with each pixel electrode is C2, and C1 is smaller than C2. The invention also provides a display device comprising the silicon-based liquid crystal chip. The silicon-based liquid crystal chip and the display device can effectively avoid the unfavorable matching problem of the silicon-based liquid crystal chip and a liquid crystal layer.
Description
Technical field
The present invention relates to Display Technique field, particularly relate to a kind of liquid crystal on silicon chip and display device.
Background technology
In recent years, electronic display technology obtains rapid development, and the cathode ray tube display of conventional art is replaced by the novel display device of such as liquid crystal display (LCD) gradually.Many terminals and small-sized Portable digital product all rely on liquid crystal display to export the content such as video, text.But regrettably, the yield rate of liquid crystal panel is relatively low, particularly large-sized liquid crystal panel makes still comparatively difficulty, and production cost is higher.
Except liquid crystal display, the Display Technique of other forms have also been obtained significant progress, for instance liquid crystal on silicon (LCOS, LiquidCristalonSilicon) display device then due to the advantage of production cost and technique, obtains relatively broad research.Described liquid crystal on silicon display device is a kind of reflective LCD device, and it adopts the silicon-based substrate identical with custom integrated circuit to make liquid crystal panel, and utilizes the device architecture that the fabrication techniques of similar CMOS technology is concrete, i.e. liquid crystal on silicon chip.This reduces on the one hand production cost, can also realize the integrated of display device and drive circuit on the other hand, thus realizing high density and high-resolution display floater.
But, the liquid crystal on silicon chip of prior art easily mates bad with the liquid crystal layer of follow-up preparation, thus affecting yield rate and the display effect of liquid crystal on silicon display device.
Summary of the invention
It is an object of the invention to, it is provided that a kind of liquid crystal on silicon chip and display device, it is possible to efficiently solve liquid crystal on silicon chip and mate bad problem with liquid crystal layer.
For solving above-mentioned technical problem, the present invention provides a kind of liquid crystal on silicon chip, including:
Substrate；And
Multiple pixel electrodes, array is in described substrate, and the cross section shape of described pixel electrode is n limit shape or circle, wherein, n >=5, the girth of described pixel electrode is C1, the foursquare girth identical with the area of described pixel electrode is C2, C1 < C2.
Further, in described liquid crystal on silicon chip, the cross section shape of described pixel electrode is positive n limit shape.
Further, in described liquid crystal on silicon chip, the adjacent edge of adjacent described pixel electrode is parallel to each other.
Further, in described liquid crystal on silicon chip, the cross section shape of described pixel electrode is regular pentagon, regular hexagon, positive heptagon or octagon.
Further, in described liquid crystal on silicon chip, described liquid crystal on silicon chip includes electrode dielectric, and described electrode dielectric is positioned in described substrate, and adjacent described pixel electrode is isolated by described electrode dielectric.
Further, in described liquid crystal on silicon chip, described substrate includes the switch transistors pipe that multiple and described pixel electrode electrically connects.
Further, in described liquid crystal on silicon chip, described liquid crystal on silicon chip includes interlayer dielectric layer, and described interlayer dielectric layer is between described pixel electrode and substrate.
Further, in described liquid crystal on silicon chip, including interconnection layer in described interlayer dielectric layer, described pixel electrode is electrically connected by described interconnection layer with described switch transistors pipe.
Another side according to the present invention, also provides for a kind of display device, including:
As above the liquid crystal on silicon chip described in any one；
Liquid crystal layer, is positioned on described pixel electrode.
Further, in this display device, described display device also includes transparency electrode and cover plate, and described transparency electrode and cover plate stack gradually on described liquid crystal layer.
Compared with prior art, liquid crystal on silicon chip provided by the invention and display device have the advantage that
In liquid crystal on silicon chip provided by the invention and display device, described liquid crystal on silicon chip base and multiple pixel electrode, multiple described pixel electrode arrays are in described substrate, the cross section shape of described pixel electrode is n limit shape or circle, wherein, n >=5, the girth of described pixel electrode is C1, the foursquare girth identical with the area of described pixel electrode is C2, C1 < C2, thus when same area, the length of side of described pixel electrode can be reduced, the probability that then etch pit produces also can correspondingly reduce, such that it is able to reduce the probability that liquid crystal layer coupling is bad, improve yield rate and the display effect of liquid crystal on silicon display device.
Accompanying drawing explanation
Fig. 1 is the schematic cross section of the pixel electrode that inventor knows；
Fig. 2 is the electromicroscopic photograph of the pixel electrode that inventor knows；
Fig. 3 is the vertical section schematic diagram of liquid crystal on silicon chip in one embodiment of the invention；
Fig. 4 is the schematic cross section of pixel electrode in one embodiment of the invention；
Fig. 5 is the vertical section schematic diagram of display device in one embodiment of the invention.
Detailed description of the invention
The liquid crystal on silicon chip of prior art easily mates bad with the liquid crystal layer of follow-up preparation, the pixel electrode 110 in the liquid crystal on silicon chip that inventor knows generally square in shape, as shown in Figure 1.Inventor studies discovery, described pixel electrode 110 is in the preparation, the semiconductor technologies such as wet etching can be used, and these semiconductor technologies can cause that the edge of described pixel electrode 110 is formed with etch pit (in Fig. 2 shown in dashed region), the existence of etch pit can cause that follow-up liquid crystal layer coupling is bad.
Inventor further study show that, if described pixel electrode is when same area, can reduce the length of side of described pixel electrode, then the probability that etch pit produces also can correspondingly reduce, such that it is able to reduce the probability that liquid crystal layer coupling is bad.
According to the studies above, inventors herein propose liquid crystal on silicon chip base and multiple pixel electrode described in a kind of liquid crystal on silicon chip, multiple described pixel electrode arrays are in described substrate, the cross section shape of described pixel electrode is n limit shape or circle, wherein, n >=5, the girth of described pixel electrode is C1, the foursquare girth identical with the area of described pixel electrode is C2, C1 < C2, thus when same area, the length of side of described pixel electrode can be reduced, the probability that then etch pit produces also can correspondingly reduce, such that it is able to reduce the probability that liquid crystal layer coupling is bad.
Further, the present invention provides a kind of display device, including described liquid crystal on silicon chip and be positioned at the liquid crystal layer on described pixel electrode.
It is described in more detail below in conjunction with the schematic diagram liquid crystal on silicon chip to the present invention and display device, which show the preferred embodiments of the present invention, should be appreciated that those skilled in the art can revise invention described herein, and still realize the advantageous effects of the present invention.Therefore, it is widely known that description below is appreciated that for those skilled in the art, and is not intended as limitation of the present invention.
In order to clear, whole features of practical embodiments are not described.They in the following description, it are not described in detail known function and structure, because can make to due to the fact that unnecessary details and chaotic.Will be understood that in the exploitation of any practical embodiments, it is necessary to make a large amount of implementation detail to realize the specific objective of developer, for instance according to about system or about the restriction of business, an embodiment change into another embodiment.Additionally, it should it is complicated and time-consuming to think that this development is probably, but it is only routine work to those skilled in the art.
With reference to the accompanying drawing present invention more particularly described below by way of example in the following passage.According to the following describes and claims, advantages and features of the invention will be apparent from.It should be noted that, accompanying drawing all adopts the form simplified very much and all uses non-ratio accurately, only in order to convenience, the purpose aiding in illustrating the embodiment of the present invention lucidly.
As it is shown on figure 3, described liquid crystal on silicon chip 1 includes substrate 200 and the array multiple pixel electrodes 210 in described substrate 200.Described substrate 200 is semiconductor base, general, and described substrate 200 is silicon base.Described substrate 200 includes the switch transistors pipe 201 that multiple and described pixel electrode 210 electrically connects, in figure 3, each switch transistors pipe 201 is corresponding connects a described pixel electrode 210, but in other embodiments of the invention, the connected mode of described switch transistors pipe 201 and described pixel electrode 210 is not limited to the mode shown in Fig. 3, and those of ordinary skill in the art can be configured according to the actual requirements.General, described switch transistors pipe 201 includes source electrode, grid and drain electrode, and this is what it will be understood by those skilled in the art that, and therefore not to repeat here.Additionally, described substrate 200 can also include the structures such as electric capacity, this is what it will be understood by those skilled in the art that, and therefore not to repeat here.
Described liquid crystal on silicon chip 1 includes interlayer dielectric layer 202, and described interlayer dielectric layer 202 is between described pixel electrode 210 and substrate 200, and the material of described interlayer dielectric layer 202 is generally oxide.Including interconnection layer 203 in described interlayer dielectric layer 202, described pixel electrode 210 is electrically connected by described interconnection layer 203 with described switch transistors pipe 201.It will be understood by those skilled in the art that described interconnection layer 203 generally can include at least one of which through-hole structure (Via) and at least one of which groove structure (trench), to realize interconnection.The structure of described interconnection layer 203 is not limited to the structure shown in Fig. 3, and those of ordinary skill in the art can be configured according to actual interconnection needs.
Described liquid crystal on silicon chip 1 includes electrode dielectric 211, and described electrode dielectric 211 is positioned in described substrate 200, and adjacent described pixel electrode 210 is isolated by described electrode dielectric 211, and general, the material of described electrode dielectric 211 is oxide.
The cross section shape of described pixel electrode 210 is n limit shape or circle, and wherein, n >=5, the girth of described pixel electrode is C1, and the foursquare girth identical with the area of described pixel electrode 210 is C2, C1 < C2.It is also preferred that the left the cross section shape of described pixel electrode is positive n limit shape, conveniently arrange, and the adjacent edge of adjacent described pixel electrode 210 is parallel to each other.Preferably, the cross section shape of described pixel electrode 210 is regular pentagon, regular hexagon, positive heptagon or octagon, etc..
As shown in Figure 4, in the present embodiment, the cross section shape of described pixel electrode 210 is regular hexagon, and the adjacent edge of adjacent described pixel electrode 210 is parallel to each other.Assuming that this regular hexagon 210 length of side is a, the foursquare length of side identical with the area of described regular hexagon 210 is b, then the area of described regular hexagon 210 is:
The girth of described regular hexagon 210 is: CHexagon=6a；
The foursquare area identical with the area of described regular hexagon 210 is:
Foursquare side length b=1.611831a；
Foursquare girth is: CTetragon=4b=6.447325a.
Therefore, under same pixel area premise, compared to square, the regular hexagon length of side reduces 7%, and the pixel edge etch pit that semiconductor technology causes produces probability and reduces 7%, thus the probability of the bad generation of liquid crystal layer orientation reduces 7%.
In like manner, the foursquare girth that the girth of described pixel electrode 210 is identical with the area of described pixel electrode 210 for C1 < is C2, then all can reduce the pixel edge etch pit generation probability that semiconductor technology causes.Such as, when the cross section shape of described pixel electrode 210 is circle, regular pentagon, regular hexagon, positive heptagon or octagon etc., the pixel edge etch pit generation probability that semiconductor technology causes all can be reduced.
Described liquid crystal on silicon chip 1 is used for preparing display device 2, as it is shown in figure 5, described display device 2 includes described liquid crystal on silicon chip 1 and is positioned at the liquid crystal layer 220 on described pixel electrode 210.In the present embodiment, described display device 2 also includes transparency electrode 230 and cover plate 240, described transparency electrode 230 and cover plate 240 stack gradually on described liquid crystal layer 220, and the material of described transparency electrode 230 can be ITO, and the material of described cover plate 240 can be glass.
In sum, in liquid crystal on silicon chip provided by the invention and display device, described liquid crystal on silicon chip base and multiple pixel electrode, multiple described pixel electrode arrays are in described substrate, the cross section shape of described pixel electrode is n limit shape or circle, wherein, n >=5, the girth of described pixel electrode is C1, the foursquare girth identical with the area of described pixel electrode is C2, C1 < C2, thus when same area, the length of side of described pixel electrode can be reduced, the probability that then etch pit produces also can correspondingly reduce, such that it is able to reduce the probability that liquid crystal layer coupling is bad, improve yield rate and the display effect of liquid crystal on silicon display device.
Obviously, the present invention can be carried out various change and modification without deviating from the spirit and scope of the present invention by those skilled in the art.So, if these amendments of the present invention and modification belong within the scope of the claims in the present invention and equivalent technologies thereof, then the present invention is also intended to comprise these change and modification.
Claims (10)
1. a liquid crystal on silicon chip, it is characterised in that including:
Substrate；And
Multiple pixel electrodes, array is in described substrate, and the cross section shape of described pixel electrode is n limit shape or circle, wherein, n >=5, the girth of described pixel electrode is C1, the foursquare girth identical with the area of described pixel electrode is C2, C1 < C2.
2. liquid crystal on silicon chip as claimed in claim 1, it is characterised in that the cross section shape of described pixel electrode is positive n limit shape.
3. liquid crystal on silicon chip as claimed in claim 2, it is characterised in that the adjacent edge of adjacent described pixel electrode is parallel to each other.
4. liquid crystal on silicon chip as claimed in claim 2, it is characterised in that the cross section shape of described pixel electrode is regular pentagon, regular hexagon, positive heptagon or octagon.
5. liquid crystal on silicon chip as described in any one in Claims 1-4, it is characterised in that described liquid crystal on silicon chip includes electrode dielectric, described electrode dielectric is positioned in described substrate, and adjacent described pixel electrode is isolated by described electrode dielectric.
6. liquid crystal on silicon chip as described in any one in Claims 1-4, it is characterised in that described substrate includes the switch transistors pipe that multiple and described pixel electrode electrically connects.
7. liquid crystal on silicon chip as claimed in claim 6, it is characterised in that described liquid crystal on silicon chip includes interlayer dielectric layer, and described interlayer dielectric layer is between described pixel electrode and substrate.
8. liquid crystal on silicon chip as claimed in claim 7, it is characterised in that including interconnection layer in described interlayer dielectric layer, described pixel electrode is electrically connected by described interconnection layer with described switch transistors pipe.
9. a display device, it is characterised in that including:
Liquid crystal on silicon chip as claimed in any of claims 1 to 8 in one of claims；
Liquid crystal layer, is positioned on described pixel electrode.
10. display device as claimed in claim 9, it is characterised in that described display device also includes transparency electrode and cover plate, and described transparency electrode and cover plate stack gradually on described liquid crystal layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610338838.0A CN105807519A (en) | 2016-05-20 | 2016-05-20 | Silicon-based liquid crystal chip and display device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610338838.0A CN105807519A (en) | 2016-05-20 | 2016-05-20 | Silicon-based liquid crystal chip and display device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105807519A true CN105807519A (en) | 2016-07-27 |
Family
ID=56452692
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610338838.0A Pending CN105807519A (en) | 2016-05-20 | 2016-05-20 | Silicon-based liquid crystal chip and display device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105807519A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109116601A (en) * | 2018-07-27 | 2019-01-01 | 北京蜃景光电科技有限公司 | A kind of dot structure, pixel array, silicon substrate and liquid crystal on silicon (LCOS) display device |
| CN110262138A (en) * | 2019-06-05 | 2019-09-20 | 深圳市华星光电半导体显示技术有限公司 | A kind of dot structure and liquid crystal display panel |
| CN111880343A (en) * | 2020-08-27 | 2020-11-03 | 豪威半导体（上海）有限责任公司 | Liquid crystal on silicon device and liquid crystal on silicon display panel |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1635413A (en) * | 2003-12-30 | 2005-07-06 | 中芯国际集成电路制造(上海)有限公司 | Method for making metallic reflective layer of silicon based LCD device |
| CN101153969A (en) * | 2006-09-30 | 2008-04-02 | 中芯国际集成电路制造(上海)有限公司 | Manufacturing method for reflection mirror of silicon-based LCD device |
| CN101196656A (en) * | 2006-12-05 | 2008-06-11 | 中芯国际集成电路制造(上海)有限公司 | Silicon based LCD unit and method for forming the same |
| CN101211077A (en) * | 2006-12-28 | 2008-07-02 | 中芯国际集成电路制造(上海)有限公司 | Silicon based LCD micro- display and method for forming same |
| CN101487957A (en) * | 2008-01-07 | 2009-07-22 | 统宝光电股份有限公司 | Lcd |
| CN101750807A (en) * | 2010-01-05 | 2010-06-23 | 友达光电股份有限公司 | Pixel structure and display panel |
| CN103713415A (en) * | 2013-12-27 | 2014-04-09 | 合肥京东方光电科技有限公司 | Pixel unit, display device and driving method thereof |
-
2016
- 2016-05-20 CN CN201610338838.0A patent/CN105807519A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1635413A (en) * | 2003-12-30 | 2005-07-06 | 中芯国际集成电路制造(上海)有限公司 | Method for making metallic reflective layer of silicon based LCD device |
| CN101153969A (en) * | 2006-09-30 | 2008-04-02 | 中芯国际集成电路制造(上海)有限公司 | Manufacturing method for reflection mirror of silicon-based LCD device |
| CN101196656A (en) * | 2006-12-05 | 2008-06-11 | 中芯国际集成电路制造(上海)有限公司 | Silicon based LCD unit and method for forming the same |
| CN101211077A (en) * | 2006-12-28 | 2008-07-02 | 中芯国际集成电路制造(上海)有限公司 | Silicon based LCD micro- display and method for forming same |
| CN101487957A (en) * | 2008-01-07 | 2009-07-22 | 统宝光电股份有限公司 | Lcd |
| CN101750807A (en) * | 2010-01-05 | 2010-06-23 | 友达光电股份有限公司 | Pixel structure and display panel |
| CN103713415A (en) * | 2013-12-27 | 2014-04-09 | 合肥京东方光电科技有限公司 | Pixel unit, display device and driving method thereof |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109116601A (en) * | 2018-07-27 | 2019-01-01 | 北京蜃景光电科技有限公司 | A kind of dot structure, pixel array, silicon substrate and liquid crystal on silicon (LCOS) display device |
| CN110262138A (en) * | 2019-06-05 | 2019-09-20 | 深圳市华星光电半导体显示技术有限公司 | A kind of dot structure and liquid crystal display panel |
| US11392001B2 (en) | 2019-06-05 | 2022-07-19 | Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Pixel structure and liquid crystal display panel |
| CN111880343A (en) * | 2020-08-27 | 2020-11-03 | 豪威半导体（上海）有限责任公司 | Liquid crystal on silicon device and liquid crystal on silicon display panel |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103941507B (en) | Array substrate, display panel and display device | |
| CN108174620B (en) | Scanning antenna and manufacturing method thereof | |
| CN107170764B (en) | Array substrate, manufacturing method of array substrate, display panel and display device | |
| JPWO2017065255A1 (en) | Scanning antenna and manufacturing method thereof | |
| CN101078848A (en) | Liquid crystal display | |
| CN107577099B (en) | Array substrate, liquid crystal display panel and liquid crystal display device | |
| CN104280951A (en) | Array substrate, manufacturing method thereof, and display device | |
| JPWO2017065088A1 (en) | Scanning antenna and manufacturing method thereof | |
| CN102981335A (en) | Pixel unit structure, array substrate and display device | |
| CN1670787A (en) | Image display apparatus using thin-film transistors | |
| CN105807519A (en) | Silicon-based liquid crystal chip and display device | |
| US20190393440A1 (en) | Display substrate, method for manufacturing display substrate, display panel, and display device | |
| CN105448824B (en) | Array substrate and preparation method thereof, display device | |
| CN102945846B (en) | Array base palte and manufacture method, display unit | |
| TWI648883B (en) | Micro illuminator | |
| CN106653813A (en) | OLED-based built-in touch display panel | |
| US20200279873A1 (en) | Scanning antenna | |
| CN1866092A (en) | Liquid crystal display device and fabrication method thereof | |
| CN104064601A (en) | TFT, TFT array substrate and manufacturing method thereof, display panel and display apparatus | |
| CN102193259A (en) | Liquid crystal display device | |
| CN105824153A (en) | Manufacturing method for displayer | |
| CN104377205A (en) | Flexible display substrate, method for manufacturing flexible display substrate and flexible display device | |
| CN103676361A (en) | Display screen, manufacturing method of display screen, and display device | |
| TWI253538B (en) | Thin film transistor flat display and its manufacturing method | |
| CN108254988B (en) | Broken wire repairing method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20160727 |