CN100353248C - Pixel structure and mfg method therefor - Google Patents
Pixel structure and mfg method therefor Download PDFInfo
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- CN100353248C CN100353248C CNB2005100821521A CN200510082152A CN100353248C CN 100353248 C CN100353248 C CN 100353248C CN B2005100821521 A CNB2005100821521 A CN B2005100821521A CN 200510082152 A CN200510082152 A CN 200510082152A CN 100353248 C CN100353248 C CN 100353248C
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Abstract
The present invention relates to a pixel structure, which comprises a thin film transistor formed on a basal plate and a storage capacitor, wherein the thin film transistor is provided with a grid electrode and an active layer; the active layer at least comprises a source electrode region and a drain electrode region, and first adulterants are adulterated in the source electrode region and the drain electrode region; the storage capacitor is formed on the basal plate; the storage capacitor is provided with a lower electrode and an upper electrode; second adulterants are adulterated in the lower electrode; the first adulterants and the second adulterants are dissimilar; in addition, the source electrode region and the drain electrode region are not connected with the lower electrode.
Description
Technical field
The present invention relates to a kind of dot structure, particularly relate to the disjunct dot structure of a kind of source area and drain region and bottom electrode and its manufacture method.
Background technology
LCD (liquid crystal display, LCD) be one of the most general present display, wherein often use thin film transistor (TFT) (Thin Film Transistor, abbreviation TFT) controls liquid crystal as its active component (active element) and turn to, and utilize electric capacity to come store charge to keep picture.
Fig. 1 is existing dot structure figure, comprise thin film transistor region A and capacitive region B, this two district comprises lower electrode layer 120b, dielectric layer 130, gate electrode 140a1,140a2 and top electrode 140b, insulation course 150, signal wire 160a and the second metal level 160b of substrate 100, cushion 110, active layer 120a and electric capacity.Signal wire 160a contacts with the source electrode 120a of thin film transistor region active layer by contact bolt 145a.The second metal level 160b is electrically connected by contact bolt 145b with the bottom electrode 120b of electric capacity.Second insulation course 170 covers first insulation course 150, signal wire 160a, reaches the second metal level 160b.Pixel electrode 180 is arranged on second insulation course 170, and it contacts with the second metal level 160b by contact bolt 165.
Fig. 2 A is the top view that is presented at active layer 120a and lower electrode layer 120b among Fig. 1, and wherein the bottom electrode 120b of active layer 120a and electric capacity is identical and constituted by continuous films (for example compound crystal silicon).And be Fig. 1 along the sectional view of Fig. 2 A section line LL, and Fig. 2 B is active layer 120a and the lower electrode layer 120b top view after mixing, wherein hatched example areas is represented doped regions.
By Fig. 1, Fig. 2 A and Fig. 2 B as can be known, use active layer 120a traditionally, can significantly increase capacitance as lower electrode layer 120b, but because critical size (the Critical Dimernsion of active layer 120a and lower electrode layer 120b technology; CD) difference is very big, so can have influence on etch-rate and etching outline when etching, this influence is called load effect (loading effect), and this can make the critical size of TFT follow the critical size variation of the TFT of peripheral circuit to increase, and then the element characteristic variation is also increased, wayward.
So industry is needed a kind of structure that can address the above problem or the method for proposing badly.
Summary of the invention
In view of this, purpose of the present invention just provides a kind of dot structure and its manufacture method, solves the problem that the critical size difference causes load effect, reaches element characteristic is better controlled.
For reaching above-mentioned purpose, the invention provides a kind of dot structure, comprise the thin film transistor (TFT) and the storage capacitors that are formed on the substrate, thin film transistor (TFT) has gate electrode and active layer, active layer comprises source area and drain region at least, and source area and drain region first alloy that mixes; And storage capacitors, being formed on the substrate, storage capacitors has bottom electrode and top electrode, and bottom electrode second alloy that mixes, and first alloy and second alloy are for special-shaped mutually, and source area and drain region do not link to each other with bottom electrode.
For reaching above-mentioned purpose, the present invention also provides a kind of one pixel structure process method, comprising: form cushion on substrate; Form active layer and bottom electrode on cushion, and active layer do not link to each other with bottom electrode, wherein active layer comprises source area and drain region at least; Carry out source area, drain region and the bottom electrode of at least one doping program in active layer, make source area and drain region first alloy that mixes, bottom electrode second alloy that mixes, first alloy and second alloy are for special-shaped mutually; Form dielectric layer on active layer and bottom electrode, with respectively as gate dielectric and capacitance dielectric layer; And form gate electrode and top electrode on dielectric layer and respectively corresponding active layer and bottom electrode.
For above and other objects of the present invention, feature and advantage can be become apparent, following conjunction with figs. and preferred embodiment are to illustrate in greater detail the present invention.
Description of drawings
Fig. 1 is an existing dot structure sectional view, comprises thin film transistor region A and pixel region B.
Fig. 2 A is the top view of the bottom electrode of demonstration active layer and electric capacity.
Fig. 2 B is active layer and the top view of lower electrode layer after mixing, the zone after wherein hatched example areas is represented to mix.
Fig. 3 A～3C is for showing the sectional view of first embodiment of the invention dot structure processing step.
Fig. 4 A is the top view of the bottom electrode of demonstration first embodiment of the invention active layer and electric capacity.
Fig. 4 B is first embodiment of the invention active layer and the top view of lower electrode layer after mixing, the zone after wherein hatched example areas is represented to mix.
Fig. 5 A～5C is the sectional view of second embodiment of the invention dot structure processing step.
Fig. 6 A is the top view of the bottom electrode of demonstration second embodiment of the invention active layer and electric capacity.
Fig. 6 B is second embodiment of the invention active layer and the top view of lower electrode layer after mixing, the zone after wherein hatched example areas is represented to mix.
The simple symbol explanation
100,300,500～substrate
110,310,510～cushion
120a, 310a, 510a～active layer
320a1,520a1～source area
320a2～intermediary district
320a3,520a3～drain region
120b, 320b, 520b～bottom electrode
130,330,520～dielectric layer
140a1,140a2,340a1,340a2,540a～gate electrode
140b, 340b, 540b～top electrode
150,350,550～the first insulation courses
160a, 360a, 560a～signal wire
160b, 360b, 560b～electrode wires
345a, 345b, 345c, 545a, 545b, 545e～electrically contact
370,570～the second insulation courses
380,580～pixel electrode
A～thin film transistor region
B～capacitive region
Embodiment
First embodiment
Below make the method for dot structure for first embodiment of the invention.
Fig. 3 A forms the diagrammatic cross-section of a patterned semiconductor layer for showing the embodiment of the invention on substrate, comprising thin film transistor (TFT) (TFT) district A and capacitive region B.At first, can utilize modes such as chemical vapor deposition (CVD) to form cushion 310 on substrate 300.Substrate 300 can comprise materials such as glass, and cushion 310 can comprise materials such as monox and silicon nitride.
Then, the deposition semi-conductor layer is carried out the photoetching etching program again and is formed active layer 320a, bottom electrode 320b and opening 320c on cushion 310.Active layer 320a does not link to each other with bottom electrode 320b, with opening 320c be its at interval, its top view and is Fig. 3 A along the sectional view of figure section line L ' L ' shown in Fig. 4 A.This active layer 320a and the disjunct structure of bottom electrode 320b can reduce existing because of link to each other with the bottom electrode 320b influence of the load effect (loading effect) that caused of active layer 320a, make the easier control of its critical size, and then make element characteristic more accurate.Active layer 320a and bottom electrode 320b can be a polysilicon layer, and can low temperature polycrystalline silicon (LTPS) technology form, as utilize plasma to promote formula chemical vapor deposition (PECVD) or low-pressure chemical vapor deposition (LPCVD) deposited amorphous silicon layer on cushion 310, utilize processing such as laser annealing that amorphous silicon layer is transformed into a polysilicon layer again, after etching, form separately independently active layer 320a and bottom electrode 320b.
See also Fig. 3 B, next respectively the doping program is carried out in the source area of active layer 320a and drain region and bottom electrode 320b, mix with first alloy at active layer 320a, with form source area 320a1, the district 320a2 of intermediary, with drain region 320a3, and bottom electrode 320b mixes with second alloy.First alloy and second alloy be for special-shaped mutually, and optical pickups needs and adjusted change, and its top view and is Fig. 3 B along the sectional view of figure section line L ' L ' shown in Fig. 4 B.Wherein if first alloy be N type alloy then second alloy be P type alloy, or first alloy be P type alloy then second alloy be N type alloy, wherein N type alloy comprises phosphorus etc., and P type alloy comprises boron etc., and the doping content of N type alloy is about 8 * 10
12～8 * 10
16Atoms/cm
3, and the doping content of P type alloy is about 1 * 10
13～1 * 10
17Atoms/cm
3In addition, to source area 320a1, the district 320a2 of intermediary of active layer 320a, carry out first alloy when mixing with drain region 320a3, can be in advance on part active layer 320a and bottom electrode 320b, form a mask (not shown), again to source area 320a1, the district 320a2 of intermediary of active layer 320a, carry out first alloy with drain region 320a3 and mix.Next, go up to form another mask, bottom electrode 320b is carried out second alloy mix, promptly form source area 320a1, the district 320a2 of intermediary, drain region 320a3 have mutually special shaped doped result respectively with bottom electrode 320b in active layer 320a.Above-mentioned doping order not with source area 320a1, the district 320a2 of intermediary, with drain region 320a3 earlier, exceed behind the bottom electrode 320b.
Next, compliant type forms dielectric layer 330 on active layer 320a, cushion 310, bottom electrode 320b, with on active layer 320a and bottom electrode 320b respectively as gate dielectric and capacitance dielectric layer.Dielectric layer 330 is a monox often, and can CVD etc. mode form.After dielectric layer 330 deposition, still can utilize mode such as annealing to activate the interface features of dopant ion, improvement dielectric layer 330 and active layer 320a and bottom electrode 320b, excessive hydrogen can be removed from dielectric layer 330 simultaneously, to improve element efficiency.
See also Fig. 3 B again, on gate dielectric and capacitance dielectric layer, form the first metal layer, for example form gate electrode 340a1,340a2 and top electrode 340b again in modes such as development etchings.The first metal layer comprises the alloy of aluminium, copper, nickel, molybdenum or above-mentioned metal, and can form by modes such as sputters.
Then, see also Fig. 3 C, on gate electrode 340a1,320a2, top electrode 340b and dielectric layer 330, form first insulation course 350, and in wherein forming a plurality of opening 345a, 345b, 345c, to expose source area 320a1, drain region 320a3, bottom electrode 320b, in those this openings 345a, 345b, 345c, insert conductive layer again, form electrically contact.Then, form second metal level, comprise signal wire 360a, be electrically connected with source area 320a1 by the conductive layer in the opening 345a, and electrode wires 360b partly is electrically connected with drain region 320a3, bottom electrode 320b etc., the step that wherein forms the conductive layer in opening 345a, 345b, the 345c and form second metal level can be simultaneously or successively to be carried out, if carry out simultaneously, when promptly forming second metal level and simultaneously opening 345a, 345b, 345c is filled up with second metal level.Then, form one second insulation course 370 on first insulation course 350 and second metal level, and in wherein forming opening 365, to expose electrode wires 360b.Then, form a pixel electrode 380 on second insulation course 570, and be electrically connected with electrode wires 360b, and then partly be electrically connected with drain region 320a3 and bottom electrode 320b etc. by opening 365.
Shown in Fig. 3 C, dot structure of the present invention comprises thin film transistor region A and capacitive region B, and wherein thin film transistor region A is formed on the substrate 300.Thin film transistor (TFT) among the thin film transistor region A is a double-grid structure, has gate electrode 340a1,340a2 and by low temperature polycrystalline silicon (LowTemperature Poly Silicon; LTPS) the active layer 320a that is constituted, this active layer 320a comprises source area 320a1, the district 320a2 of intermediary and drain region 320a3 at least.Source area 320a1, the district 320a2 of intermediary and drain region 32,0a3 first alloy that mixes.And the electric capacity among the capacitive region B is formed on the substrate 300, and this electric capacity has bottom electrode 320b and top electrode 340b, presss from both sides therebetween with dielectric layer 330.And bottom electrode 320b second alloy that mixes, wherein first alloy and second alloy be for special-shaped mutually, and drain region 320a3, the district 320a2 of intermediary and source area 320a1 directly do not link to each other with bottom electrode 320b.This structure can solve the problem of above-mentioned load effect, reaches element characteristic is better controlled.
Second embodiment
Fig. 5 A forms the diagrammatic cross-section of a patterned semiconductor layer for showing the embodiment of the invention on substrate, comprising thin film transistor (TFT) (TFT) district A and capacitive region B.At first, on substrate 500 for example to utilize modes such as chemical vapor deposition (CVD) to form cushion 510.Substrate 500 can comprise materials such as glass, and cushion 510 can comprise materials such as monox and silicon nitride.
Then, the deposition semi-conductor layer is carried out the photoetching etching program again and is formed active layer 520a, bottom electrode 520b and opening 520c simultaneously on cushion 510.Active layer 520a does not link to each other with bottom electrode 520b, with opening 520c be its at interval, top view is Fig. 5 A along the sectional view of Fig. 6 A section line L ' L ' as shown in Figure 6A.This active layer 520a and the disjunct structure of bottom electrode 520b can reduce existing because of link to each other with the bottom electrode 120b influence of the load effect (loading effect) that caused of active layer 120a, make the easier control of its critical size, and then make element characteristic more accurate.Active layer 520a and bottom electrode 520b can be a uncrystalline silicon (amorphous silicon) layer.For example, utilize plasma to promote formula chemical vapor deposition (PECVD) or low-pressure chemical vapor deposition (LPCVD) deposited amorphous silicon layer on cushion 510, after etching, form separately independently active layer 520a and bottom electrode 520b.
See also Fig. 5 B, next respectively active layer 520a and bottom electrode 520b are carried out the doping program, mix with first alloy at active layer 520a, to form source area 520a1 and drain region 520a3, and bottom electrode 520b mixes with second alloy, and first alloy and second alloy be for special-shaped mutually, and optical pickups needs and adjusted change, its top view and is Fig. 5 B along the sectional view of figure section line L ' L ' shown in Fig. 6 B.Wherein if first alloy be N type alloy then second alloy be P type alloy, or first alloy be P type alloy then second alloy be N type alloy, wherein N type alloy comprises phosphorus etc., and P type alloy comprises boron etc., and the doping content of N type alloy is about 8 * 10
12～8 * 10
16Atom/em
3(atoms/cm
3), and the doping content of P type alloy is about 1 * 10
13～1 * 10
17Atoms/cm
3The source area 520a1 of active layer 520a and drain region 520a3 are being carried out first alloy when mixing, can form a mask (not shown) in advance on part active layer 520a and bottom electrode 520b, source area 520a1 and the drain region 520a3 to active layer 520a carries out the doping of first alloy again; Next go up in active layer 520a again and form another mask, again bottom electrode 520b is carried out second alloy and mix, promptly form source area 520a1 and drain region 520a3 and have mutually special shaped doped result respectively with bottom electrode 520b.Above-mentioned doping order is first with source area 520a1 and drain region 520a3, exceed behind the bottom electrode 520b.
Next, see also Fig. 5 B, compliant type forms dielectric layer 530 on active layer 520a, cushion 510, bottom electrode 520b, with on active layer 520a and bottom electrode 520b respectively as gate dielectric and capacitance dielectric layer.Dielectric layer 530 can be monox, and can CVD etc. mode form.After dielectric layer 530 deposition, still can utilize mode such as annealing to activate the interface features of dopant ion, improvement dielectric layer 530 and active layer 520a and bottom electrode 520b, excessive hydrogen can be removed from dielectric layer 530 simultaneously, to improve element efficiency.
Then, on gate dielectric and capacitance dielectric layer, form the first metal layer, comprise gate electrode 540a and top electrode 540b.The first metal layer can comprise the alloy of aluminium, copper, nickel, molybdenum or above-mentioned metal, and can form by the sputter mode.
Next see also Fig. 5 C, on gate electrode 540a, top electrode 540b and dielectric layer 530, form first insulation course 550, and in wherein forming a plurality of opening 545a, 545b, 545c, to expose source area 520a1, drain region 520a3, bottom electrode 520b, in those openings 545a, 545b, 545c, insert conductive layer again, form electrically contact.Then, form second metal level, comprise that signal wire 560 is electrically connected with source area 520al by the conductive layer in the opening 545a, and electrode wires 560b partly is electrically connected with drain region 520a3 and bottom electrode 520b etc., the step that wherein forms the conductive layer in opening 545a, 545b, the 545c and form second metal level can be simultaneously or successively to be carried out, if carry out simultaneously, when promptly forming second metal level and simultaneously opening 545a, 545b, 545c filled up with second metal level.Then, form one second insulation course 570 on first insulation course 550 and second metal level, and in wherein forming opening 565, to expose electrode wires 560b.Then, form a pixel electrode 580 on second insulation course 570, and be electrically connected with electrode wires 560b, and then partly be electrically connected with drain region 520a3 and bottom electrode 520b etc. by opening 565.
Shown in Fig. 5 C, dot structure of the present invention comprises thin film transistor region A and capacitive region B, and wherein the thin film transistor (TFT) among the thin film transistor region A is formed on the substrate 500.Thin film transistor (TFT) A is a device of single gate structure, the active layer 520a that has gate electrode 540a and constituted by uncrystalline silicon (amorphous silicon), and this active layer 520a comprises source area 520a1 and drain region 520a3 at least.Source area 520a1 and drain region 52,0a3 first alloy that mixes.And the electric capacity among the capacitive region B is formed on the substrate 500, and this electric capacity has bottom electrode 520b and top electrode 540b, presss from both sides therebetween with dielectric layer 530.And bottom electrode 520b second alloy that mixes, wherein first alloy and second alloy be for special-shaped mutually, and active layer 520a serves as directly not link to each other at interval with bottom electrode 520b with opening 520c, shown in Fig. 6 A and Fig. 6 B.This structure can solve the problem of above-mentioned load effect, reaches element characteristic is better controlled.
Though the present invention discloses as above with preferred embodiment; yet it is not in order to limit the present invention; those skilled in the art can do a little change and retouching without departing from the spirit and scope of the present invention, thus protection scope of the present invention should with accompanying Claim the person of being defined be as the criterion.
Claims (41)
1, a kind of dot structure comprises:
One thin film transistor (TFT) is formed on the substrate, and this thin film transistor (TFT) has a gate electrode and an active layer, and this active layer comprises an one source pole district and a drain region at least, and this source area and this drain region have one first alloy; And
One electric capacity is formed on this substrate, and this electric capacity has a bottom electrode and a top electrode, and this bottom electrode is electrically connected with this drain region, and this bottom electrode one second alloy that mixes, and wherein this first alloy and this second alloy have different doping types.
2, dot structure as claimed in claim 1, wherein this first alloy is a N type alloy, and this second alloy is a P type alloy.
3, dot structure as claimed in claim 2, wherein this N type alloy comprises phosphorus.
4, dot structure as claimed in claim 2, wherein this P type alloy comprises boron.
5, dot structure as claimed in claim 2, wherein the doping content of this N type alloy is about 8 * 10
12To 8 * 10
16Atom/cm
3
6, dot structure as claimed in claim 2, wherein the doping content of this P type alloy is about 1 * 10
13To 1 * 10
17Atom/cm
3
7, dot structure as claimed in claim 1, wherein this first alloy is a P type alloy, and this second alloy is a N type alloy.
8, dot structure as claimed in claim 7, wherein this N type alloy comprises phosphorus.
9, dot structure as claimed in claim 7, wherein this P type alloy comprises boron.
10, dot structure as claimed in claim 7, wherein the doping content of this N type alloy is about 8 * 10
12To 8 * 10
16Atom/cm
3
11, dot structure as claimed in claim 7, wherein the doping content of this P type alloy is about 1 * 10
13To 1 * 10
17Atom/cm
3
12, dot structure as claimed in claim 1 comprises that also one first insulation course is positioned on this gate electrode and this top electrode.
13, dot structure as claimed in claim 12, comprise that also a conductive layer is positioned on this first insulation course, wherein this first insulation course and this dielectric layer have one first opening to expose this active layer, and this conductive layer is electrically connected with this active layer by this first opening.
14, dot structure as claimed in claim 13, wherein this first insulation course and this dielectric layer also have one second opening to expose this bottom electrode, and this conductive layer also is electrically connected with this bottom electrode by this second opening.
15, dot structure as claimed in claim 14 also comprises:
One second insulation course is positioned on this conductive layer and this first insulation course, and wherein this second insulation course has one the 3rd opening to expose this conductive layer; And
One pixel electrode is positioned on this second insulation course, is electrically connected with this conductive layer by the 3rd opening.
16, dot structure as claimed in claim 13 also comprises:
One second insulation course is positioned on this conductive layer and this first insulation course, and wherein this second insulation course has one the 3rd opening to expose this conductive layer; And
One pixel electrode is positioned on this second insulation course, is electrically connected with this conductive layer by the 3rd opening.
17, dot structure as claimed in claim 12 comprises that also a conductive layer is positioned on this first insulation course, and this first insulation course and this dielectric layer have an opening to expose this bottom electrode, and wherein this conductive layer is electrically connected by this opening and with this bottom electrode.
18. dot structure as claimed in claim 12 also comprises:
One second insulation course is positioned on this conductive layer and this first insulation course, and wherein this second insulation course has one the 3rd opening to expose this conductive layer; And
One pixel electrode is positioned on this second insulation course, is electrically connected with this conductive layer by the 3rd opening.
19, dot structure as claimed in claim 1, wherein this active layer and this bottom electrode comprise a polysilicon layer.
20, dot structure as claimed in claim 1, wherein this active layer and this bottom electrode comprise an amorphous silicon layer.
21, dot structure as claimed in claim 1, wherein this active layer also comprises an intermediary district, between this source area and this drain region, this first alloy mixes in this intermediary district.
22, dot structure as claimed in claim 1, wherein this source area and this drain region directly do not link to each other with this bottom electrode.
23, a kind of one pixel structure process method comprises:
Form a cushion on a substrate;
Form an active layer and a bottom electrode on this cushion, wherein this active layer comprises an one source pole district and a drain region at least;
Carry out at least one doping program in this source area, this drain region and this bottom electrode, make this source area and this drain region have one first alloy, this bottom electrode has one second alloy, and this first alloy and this second alloy have different doping types;
Form a dielectric layer on this active layer and this bottom electrode; And
Form an at least one gate electrode and a top electrode on this dielectric layer and respectively to should active layer and this bottom electrode.
24, one pixel structure process method as claimed in claim 23, wherein this first alloy is a N type alloy, and this second alloy is a P type alloy.
25, one pixel structure process method as claimed in claim 24, wherein this N type alloy comprises phosphorus.
26, one pixel structure process method as claimed in claim 24, wherein this P type alloy comprises boron.
27, one pixel structure process method as claimed in claim 24, wherein the doping content of this N type alloy is about 8 * 10
12To 8 * 10
16Atom/cm
3
28, one pixel structure process method as claimed in claim 24, wherein the doping content of this P type alloy is about 1 * 10
13To 1 * 10
17Atom/cm
3
29, one pixel structure process method as claimed in claim 23, wherein this first alloy is a P type alloy, and this second alloy is a N type alloy.
30, one pixel structure process method as claimed in claim 29, wherein this N type alloy comprises phosphorus.
31, one pixel structure process method as claimed in claim 29, wherein this P type alloy comprises boron.
32, one pixel structure process method as claimed in claim 29, wherein the doping content of this N type alloy is about 8 * 10
12To 8 * 10
16Atom/cm
3
33, one pixel structure process method as claimed in claim 29, wherein the doping content of this P type alloy is about 1 * 10
13To 1 * 10
17Atom/cm
3
34, one pixel structure process method as claimed in claim 23 wherein forms this active layer and the step of this bottom electrode on this cushion comprises:
Form semi-conductor layer on this cushion; And
This semiconductor layer of patterning is to define this active layer and this bottom electrode, and wherein this active layer and this bottom electrode be not for directly linking to each other.
35, the described one pixel structure process method of claim 23 wherein forms this active layer and the step of this bottom electrode on this cushion comprises:
Form semi-conductor layer on this cushion; And
On this semiconductor layer, define this active layer and this bottom electrode.
36, one pixel structure process method as claimed in claim 23 also comprises:
Form one first insulation course on this gate electrode, this top electrode and this dielectric layer; And
Form one first opening and one second and be opened on this source area and this drain region to expose this active layer on this first insulation course.
37, one pixel structure process method as claimed in claim 36, also comprise formation one signal wire and a conductive layer on this first insulation course, and be electrically connected with this source area and this drain region of this active layer respectively by this first opening and this second opening.
38, one pixel structure process method as claimed in claim 37 comprises that also forming one the 3rd is opened on this first insulation course to expose this bottom electrode, and this conductive layer also is electrically connected with this bottom electrode by the 3rd opening.
39, one pixel structure process method as claimed in claim 38 also comprises:
Form one second insulation course on this signal wire, this conductive layer and this first insulation course;
Forming one the 4th is opened on this second insulation course to expose this conductive layer; And
Forming a pixel electrode is electrically connected with this conductive layer on this second insulation course and by the 4th opening.
40, one pixel structure process method as claimed in claim 37 also comprises:
Form one second insulation course on this signal wire, this conductive layer and this first insulation course;
Forming one the 4th is opened on this second insulation course to expose this conductive layer; And
Forming a pixel electrode is electrically connected with this conductive layer on this second insulation course and by the 4th opening.
41, one pixel structure process method as claimed in claim 23, wherein this active layer comprises that also an intermediary district is positioned between this source area and this drain region, this intermediary district has this first alloy.
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| CN100414667C (en) * | 2006-08-07 | 2008-08-27 | 友达光电股份有限公司 | Storage capacitor and its forming method and dispaly containing same |
| TWI352235B (en) | 2007-09-05 | 2011-11-11 | Au Optronics Corp | Method for manufacturing pixel structure |
| KR101807848B1 (en) * | 2010-08-17 | 2017-12-12 | 삼성디스플레이 주식회사 | Organinc light emitting display device and manufacturing method for the same |
| CN103390592B (en) | 2013-07-17 | 2016-02-24 | 京东方科技集团股份有限公司 | Array base palte preparation method, array base palte and display unit |
| CN104103646A (en) * | 2014-06-30 | 2014-10-15 | 京东方科技集团股份有限公司 | Low temperature poly-silicon thin film transistor array substrate and fabrication method thereof and display device |
| CN110993644A (en) | 2019-11-06 | 2020-04-10 | 深圳市华星光电半导体显示技术有限公司 | OLED display panel and preparation method thereof |
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| CN1710469A (en) | 2005-12-21 |
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