CN100350573C - Method and structure for forming adhesive force between dielectric layers - Google Patents
Method and structure for forming adhesive force between dielectric layers Download PDFInfo
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- CN100350573C CN100350573C CNB2003101199461A CN200310119946A CN100350573C CN 100350573 C CN100350573 C CN 100350573C CN B2003101199461 A CNB2003101199461 A CN B2003101199461A CN 200310119946 A CN200310119946 A CN 200310119946A CN 100350573 C CN100350573 C CN 100350573C
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- 238000000034 method Methods 0.000 title claims abstract description 52
- 239000000853 adhesive Substances 0.000 title abstract 2
- 230000001070 adhesive effect Effects 0.000 title abstract 2
- 238000005229 chemical vapour deposition Methods 0.000 claims description 42
- 230000015572 biosynthetic process Effects 0.000 claims description 29
- 239000003999 initiator Substances 0.000 claims description 5
- 230000002787 reinforcement Effects 0.000 claims description 5
- 230000005611 electricity Effects 0.000 claims description 4
- 239000002002 slurry Substances 0.000 claims description 4
- 239000003795 chemical substances by application Substances 0.000 claims 4
- HMDDXIMCDZRSNE-UHFFFAOYSA-N [C].[Si] Chemical group [C].[Si] HMDDXIMCDZRSNE-UHFFFAOYSA-N 0.000 claims 1
- UMVBXBACMIOFDO-UHFFFAOYSA-N [N].[Si] Chemical group [N].[Si] UMVBXBACMIOFDO-UHFFFAOYSA-N 0.000 claims 1
- 238000011065 in-situ storage Methods 0.000 abstract description 5
- 239000000463 material Substances 0.000 description 13
- 229910052581 Si3N4 Inorganic materials 0.000 description 9
- 239000010949 copper Substances 0.000 description 9
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 7
- 229910052802 copper Inorganic materials 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- 238000000151 deposition Methods 0.000 description 6
- 230000008021 deposition Effects 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 5
- 229910052799 carbon Inorganic materials 0.000 description 5
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 4
- 239000003989 dielectric material Substances 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 230000032798 delamination Effects 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- 238000013001 point bending Methods 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 229910000906 Bronze Inorganic materials 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 239000010974 bronze Substances 0.000 description 2
- 229910002092 carbon dioxide Inorganic materials 0.000 description 2
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- QRSFFHRCBYCWBS-UHFFFAOYSA-N [O].[O] Chemical compound [O].[O] QRSFFHRCBYCWBS-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000002860 competitive effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000006557 surface reaction Methods 0.000 description 1
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- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Formation Of Insulating Films (AREA)
Abstract
The present invention provides a method for forming adhesive force between dielectric layers. The present invention comprises the steps: forming a first dielectric layer; forming a second dielectric layer; forming a first part and a second part during forming the second dielectric layer. The first part is formed on the first dielectric layer, and the second part is formed on the first part, and the first part and the second part are formed by an in situ manner. At least one dielectric coefficient or hardness or SiCH3/SiO area ratio of the first part is higher than that of the second part. An enhanced inner adhesion dielectric layer structure contains the first dielectric layer and the second dielectric layer, wherein the first part is positioned on the first dielectric layer, and the second part is positioned above the first part. The dielectric coefficient of the first part is approximately from 2.8 to 3.5, and is higher than the dielectric coefficient of the second part.
Description
Technical field
The present invention is relevant for the method and the structure that form dielectric layer, particularly about forming the method and the structure of adhesion between the dielectric layer.
Background technology
Because dwindling of manufacture of semiconductor size, in logic lock level (gate level), be lift elements speed, with regard to the transmission delay that must note connecting by in the caused metal of capacity resistance cime constant, and can reduce transmission delay via the merging of low-k material, use the low-k material also can reduce the loss and the transistorized cross-talk (crosstalk) of energy.
Following technology a little, will need competitive low-k material, to meet the needs of performance.In 2003, (inter-level dielectric, effective dielectric coefficient ILD) (effective dielectric constant) will need extremely low dielectric coefficient (extreme low-k) material and be lower than 2.0 as much as possible between (with respect to processing procedure between 130 nanometers and 100 nanometers) between 2.2 and 2.9 for inner layer dielectric layer.
Carbide and nitride are the interior interconnection techniques that has been applied in inner layer dielectric layer widely, and partly cause is, to being familiar with and the general mode that has multiple deposition in manufacture of semiconductor of its.Aspect multiple processing procedure, carbide layer in the inner layer dielectric layer can be via the method for multiple deposition, it comprises chemical vapour deposition (CVD) (chemical vapor deposition, CVD), the chemical vapour deposition (CVD) of electricity slurry heavier-duty (plasmaenhanced CVD, PECVD) and liquid spin-on glasses (liquid spin-on glass) formation technology to reach high-quality inner layer dielectric layer.
One prior art comprises deposition one dielectric layer and a low-k layer at the formation inner layer dielectric layer.Certainly you may design one group of structure that does not have the low-k layer, but you still need to integrate it at last.The step that one planarization (planarzation) arranged after the deposition, its use cmp (chemical-mechanicalpolishing, CMP) technology, on the extra play that forms so that a smooth upper surface to be provided.So division (delamination) just occurs between a dielectric layer and the low-k layer.The surface reaction of oxygen (oxygen) and oxygen base (oxygen radicals) and low-k material at this moment, and this also can cause degradation, and this is because bond is broken and the loss of hydrogen bond (hydrogen) and/or the loss that contains methyl groups (methyl group) cause.
As shown in Figure 1, a real example is preceding in forming copper mosaic process technology (Cu damascene).At first form a bronze medal layer 101, come on copper layer 101, to form a silicon nitride layer 102 (silicon nitride) again to intercept the copper diffusion, on silicon nitride layer 102, form the dielectric layer of a low-k then, carbon doped oxide layer 103 (carbon doped oxide for example, CDO), owing to do not have good adhesion between silicon nitride layer 102 and the carbon doped oxide layer 103, can comprise in cmp or other etch process or other deposition manufacture process in ensuing semiconductor step, the phenomenon that is easy to division between silicon nitride layer 102 and the carbon doped oxide layer 103 takes place.
Therefore we need a method and a structure of improving the adhesion between a dielectric layer and the low-k layer, and ensuing explanation just provides a method and structure in order to improve the adhesion between a dielectric layer and a low-k layer.
Summary of the invention
In above-mentioned background of invention, if division (delamination) occurs between a dielectric layer and the low-k layer, and this will cause many shortcomings, so one of the object of the invention, be to provide a kind of formation dielectric layer method and structure, and do not increasing the processing procedure degree of difficulty simultaneously, to improve the adhesion between a dielectric layer and the low-k layer.
Another object of the present invention is to provide a kind of method and structure that forms adhesion between the dielectric layer.Utilize the mode of situ deposited (in-situ deposition), can form the dielectric layer of taking into account low-k and good adhesion.
A kind of method that forms adhesion between the dielectric layer comprises:
One first dielectric layer is provided; And
The original place forms one second dielectric layer on this first dielectric layer, the step that forms this second dielectric layer comprises: form one first partly on this first dielectric layer and one second partly in this first partly on, this first and this second partly common this second dielectric layer of formation, wherein this first part has one the 21 dielectric coefficient that one first dielectric constant is higher than this second part, the scope of this first dielectric constant is 2.8 to 3.5, the scope of this second dielectric constant is 1.1 to 3, this second partly thickness is thicker than this first partly thickness, this first dielectric constant that partly is lower than this first dielectric layer with this second partly overall dielectric constant;
By this first partly to increase the adhesion between this second dielectric layer and this first dielectric layer.
For further specifying above-mentioned purpose of the present invention, design feature and effect, the present invention is described in detail below with reference to accompanying drawing.
Description of drawings
Fig. 1 shows the generalized section for known formation dielectric layer structure;
Fig. 2 is the cut-away section schematic diagram that forms the general dielectric layer structure on the metal level according to the inventive method; And
Fig. 3 is for forming the generalized section of the low dielectric layer structure on the general dielectric layer according to the inventive method.
Embodiment
Before beginning to describe the present invention in detail, we introduce some basic concepts earlier with understanding that can be more complete to the present invention.
Integrate the exchange between low-k material and the optimization material behavior, suitable relation is arranged.A kind ofly determine that the factor of following low-k material is dielectric coefficient (dielectric constant).Contain the inner layer dielectric layer of low-k layer for the application of success, its mechanical strength also is a kind of important considering.And this is to find a balance point in lower dielectric coefficient material behavior, to obtain an acceptable mechanical strength.But howsoever, adhesion (adhesion), plasticity creep (plastic creep), and thermally-stabilised all be can influence the application of low-k material on electronics.
Generally speaking, dielectric coefficient and hardness (hardness) and SiCH3/SiO area than between exist association.When dielectric coefficient increased, hardness and SiCH3/SiO area were than also increasing.Again furtherly, if dielectric coefficient increase then adhesion also increase.According to these associations, when the dielectric coefficient of dielectric materials improves, hardness and SiCH3/SiO area are than increasing, and adhesion also can increase, therefore but the excessive raising of dielectric coefficient deviates from the purpose of using dielectric materials on the contrary, how to take into account the low-k of dielectric layer and good adhesion is one of purpose of the present invention.
Below the description of processing procedure and method is not comprised the entire flow that integrated circuit is made.The prior art that the present invention continued to use is only done quoting of emphasis formula at this, to help narration of the present invention.And drafting to scale of relevant indicators in the literary composition in following, its effect is only at performance method feature of the present invention.
A kind of method that forms adhesion between the dielectric layer comprises formation first dielectric layer and forms second dielectric layer, wherein forms second dielectric layer and comprises formation first and form second portion.On first dielectric layer, form first and in first, form second portion.Mode by original place (in-situ) forms first and second portion.First has at least a dielectric coefficient or hardness or SiCH3/SiO area to be higher than second portion than (area ratio).Stick together the dielectric layer structure of (inter-adhesion-enhanced) in a kind of the reinforcement, comprise first dielectric layer, and second dielectric layer have first to be positioned on first dielectric layer and second portion is positioned on the first, wherein first one dielectric coefficient is arranged approximately is 2.8 to 3.5 and be higher than the dielectric coefficient of second portion.
Fig. 2 shows that one meets the cross-section illustration of formation first dielectric layer of semiconductor structure of the present invention.Provide an example at this, but be not limited to this, also be not subject to copper mosaic process technology (Cu damascene).In this most preferred embodiment, provide semiconductor structure (not being shown among the figure) to set up articulamentum in the metal.One bronze medal layer 201 is positioned on the semiconductor structure, forms first dielectric layer 202 then on copper layer 201.Here be noted that formerly described first step this do not have limited.For example also can use aluminum manufacturing procedure at this.
In a most preferred embodiment, first dielectric layer 202, it forms material such as silicon nitride (SiN), is positioned on the copper layer 201, to prevent the diffusion of copper.First dielectric layer 202 also can be carbide or other nitride.In general, first dielectric layer 202 is one deck barrier layers, uses general dielectric material, and its dielectric coefficient is higher.According to above-mentioned, in the present invention, the dielectric coefficient of first dielectric layer 202 is the dielectric coefficients that are higher than whole second dielectric layer of follow-up formation.
Show that as Fig. 3 a generalized section that meets formation second dielectric layer of semiconductor structure of the present invention shows that second dielectric layer as carbon doped oxide layer (CDO), be formed on first dielectric layer 202, and its dielectric coefficient is less than first dielectric layer 202.Certainly, also can be other low dielectric material such as MSSQ herein, SiLK and POROSITY etc.Second dielectric layer comprises a start-up portion 203 (initial portion) and a main part 204 (bulk portion).One of the present invention feature is to form start-up portion 203 and main part 204 by the mode of original place (in-situ).Start-up portion 203 is formed on first dielectric layer 202 and main part 204 is formed on the start-up portion 203.Wherein the start-up portion 203 between first dielectric layer 202 and main part 204 provides good adhesion, can avoid this dielectric layer structure to divide the situation of (delamination) in manufacture process or after the manufacture process between dielectric layer.According to above-mentioned, the dielectric layer structure that sticks together (inter-adhesion-enhanced) in the reinforcement that the inventive method provided does not have the situation generation of division.
Again furtherly, one of feature of the present invention is, compared to main part 204, provides adhesion and the start-up portion 203 that forms by original place (in-situ) mode has a higher dielectric coefficient.In one embodiment, it approximately is 2.8 to 3.5 that start-up portion 203 has a dielectric coefficient scope, and main part 204 has a dielectric coefficient scope about 1.1 to 3 simultaneously.Secondly, can can the thickness of start-up portion 203 approximately be to 10? or it is lower, this is the restriction of depending on instrument, but main part 204 has a thickness far to be thicker than the thickness of start-up portion 203, and therefore the overall dielectric coefficient of second dielectric layer (comprising start-up portion 203 and main part 204) still is lower than first dielectric layer 202.Be noted that, in order to take into account adhesion and the low-k that provides good, the formation of start-up portion 203 is restriction to some extent also, and in a preferred embodiment, the SiCH3/SiO area of may command start-up portion 203 is than less than 3 (can utilize can obtain a FT-IR figure on instrument learn).
According to the present invention,, can reach the method for situ deposited by adjusting the parameter that forms start-up portion 203 and main part 204.In one embodiment, the method for situ deposited, as the heavier-duty chemical vapour deposition (CVD) (PECVD) of electricity slurry, the about 5000Sccm of about 6Torr of pressure and carbon dioxide flow velocity (CO2 flow rate) when it is carried out.During situ deposited,, can improve HFRF (HighFrequency Ratio Frequency) energy extremely between about 900 watts to 1500 watts in order to form start-up portion 203.Then recover normal (just reducing the HFRF energy) afterwards to form main part 204.Identical, adjust or operate any process conditions, as raising HFRF energy or bias voltage (bias) or reduction initiator (precursor) dosage, but be not restricted to this, all can have the start-up portion 203 of preferable tack strength in order to formation.
As shown in Table 1, be the data that a dielectric layer structure that forms according to the formed dielectric layer structure of the inventive method and conventional method obtains after tested, with known four-point bending method test adhesion, wherein Gc value is represented adhesion better more greatly.In comparison, Gc value of the present invention almost is more than the twice of prior art, and this also illustrated adhesion strong about twice.
The result of table one-four-point bending adhesion test
| The test of four-point bending adhesion (Gc, J/m2) | ||
| The present invention | SiN/ (start-up portion+main part) | 9.1 |
| SiC/ (start-up portion+main part) | 10.1 | |
| Conventional art | SiN+ low-k material | 4.5 |
| SiC+ low-k material | 4.4 | |
The above is preferred embodiment of the present invention only, is not in order to limit claim of the present invention; All other do not break away from the equivalence of being finished under the disclosed spirit and changes or modification, all should be included in the following claim.
Claims (16)
1. method that forms adhesion between the dielectric layer comprises:
One first dielectric layer is provided; And
The original place forms one second dielectric layer on this first dielectric layer, the step that forms this second dielectric layer comprises: form one first partly on this first dielectric layer and one second partly in this first partly on, this first and this second partly common this second dielectric layer of formation, wherein this first part has one second dielectric coefficient that one first dielectric constant is higher than this second part, the scope of this first dielectric constant is 2.8 to 3.5, the scope of this second dielectric constant is 1.1 to 3, this second partly thickness is thicker than this first partly thickness, this first dielectric constant that partly is lower than this first dielectric layer with this second partly overall dielectric constant;
By this first partly to increase the adhesion between this second dielectric layer and this first dielectric layer.
2. the method for adhesion is characterized in that between the formation dielectric layer as claimed in claim 1, comprises the different process conditions of operation at least and form this first and this second portion in regular turn in the step that this original place forms.
3. the method for adhesion is characterized in that between the formation dielectric layer as claimed in claim 2, operates this different process conditions and comprises at least:
Use first to be biased in this first of formation in the chemical vapour deposition (CVD); And
Use second to be biased in this second portion of formation in this chemical vapour deposition (CVD), wherein this first bias voltage is greater than this second bias voltage.
4. the method for adhesion is characterized in that between the formation dielectric layer as claimed in claim 2, operates this different process conditions and comprises at least:
Use the first high-frequency radio frequency energy in a chemical vapour deposition (CVD), to form this first; And
Use one second high-frequency radio frequency energy to form this second portion in this chemical vapour deposition (CVD), wherein this first high-frequency radio frequency energy is higher than this second high frequency and penetrates energy.
5. the method for adhesion is characterized in that between the formation dielectric layer as claimed in claim 2, operates this different process conditions and comprises at least:
Use the first initial agent dose in a chemical vapour deposition (CVD), to form this first; And
Use the second initiator dosage to form this second portion in this chemical vapour deposition (CVD), wherein this first initial agent dose is less than this second initiator dosage.
6. the method for adhesion is characterized in that between the formation dielectric layer as claimed in claim 1, and the step that this original place forms comprises carries out an electricity slurry heavier-duty chemical vapour deposition (CVD).
7. method that forms adhesion between the dielectric layer comprises:
One first dielectric layer is provided; And
The original place forms one second dielectric layer on this first dielectric layer, the step that forms this second dielectric layer comprises: form one first partly be positioned on this first dielectric layer and one second partly be positioned at this first partly on, this first and this second partly common this second dielectric layer of formation, wherein this first partly has a hardness and is higher than this second partly, the scope of the dielectric constant of this first part is 2.8 to 3.5, the scope of the dielectric constant of this second part is 1.1 to 3, this second partly thickness is thicker than this first partly thickness, this first dielectric constant that partly is lower than this first dielectric layer with this second partly overall dielectric constant;
By this first partly to increase the adhesion between this second dielectric layer and this first dielectric layer.
8. the method for adhesion is characterized in that between the formation dielectric layer as claimed in claim 7, and the step that this original place forms comprises at least:
Use first to be biased in this first of formation in the chemical vapour deposition (CVD); And
Use second to be biased in this second portion of formation in this chemical vapour deposition (CVD), wherein this first bias voltage is greater than this second bias voltage.
9. the method for adhesion is characterized in that between the formation dielectric layer as claimed in claim 7, and the step that this original place forms comprises at least:
Use the first high-frequency radio frequency energy in a chemical vapour deposition (CVD), to form this first; And
Use the second high-frequency radio frequency energy to form this second portion in this chemical vapour deposition (CVD), wherein this first high-frequency radio frequency energy is higher than this second high frequency and penetrates energy.
10. the method for adhesion is characterized in that between the formation dielectric layer as claimed in claim 7, and the step that this original place forms comprises at least:
Use the first initial agent dose in a chemical vapour deposition (CVD), to form this first; And
Use the second initiator dosage to form this second portion in this chemical vapour deposition (CVD), wherein this first initial agent dose is less than this second initiator dosage.
11. the method for adhesion is characterized in that between the formation dielectric layer as claimed in claim 7, the step that this original place forms comprises:
Carry out a chemical vapour deposition (CVD) with first process conditions and form this first; And
Carry out this chemical vapour deposition (CVD) with second process conditions and form this second portion.
12. the method for adhesion is characterized in that between the formation dielectric layer as claimed in claim 11, this chemical vapour deposition (CVD) is an electricity slurry heavier-duty chemical vapour deposition (CVD).
13. the dielectric layer structure that sticks together in the reinforcement comprises:
One first dielectric layer; And
One second dielectric layer, its have one first partly be positioned on this first dielectric layer and one second partly be positioned at this first partly on, wherein this first part has second dielectric constant that one first dielectric coefficient is higher than this second part, the scope of first dielectric constant of this first part is 2.8 to 3.5, the scope of second dielectric constant of this second part is 1.1 to 3, this second partly thickness is thicker than this first partly thickness, this first dielectric constant that partly is lower than this first dielectric layer with this second partly overall dielectric constant.
14. the dielectric layer structure that sticks together in the reinforcement as claimed in claim 13 is characterized in that, this first dielectric layer is a nitrogen silicon compound.
15. the dielectric layer structure that sticks together in the reinforcement as claimed in claim 13 is characterized in that, this first dielectric layer is a carbon-silicon compound.
16, a kind of method that forms adhesion between dielectric layer comprises:
One first dielectric layer is provided; And
The original place forms one second dielectric layer on this first dielectric layer, the step that forms this second dielectric layer comprises: form one first partly be positioned on this first dielectric layer and one second partly be positioned at this first partly on, this first and this second partly common this second dielectric layer of formation, wherein this first part has the SiCH3/SiO area ratio that is higher than this second part, the scope of the dielectric constant of this first part is 2.8 to 3.5, the scope of the dielectric constant of this first part is 1.1 to 3, this second partly thickness is thicker than this first partly thickness, this first dielectric constant that partly is lower than this first dielectric layer with this second partly overall dielectric constant;
By this first partly to increase the adhesion between this second dielectric layer and this first dielectric layer.
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| CNB2003101199461A CN100350573C (en) | 2003-11-27 | 2003-11-27 | Method and structure for forming adhesive force between dielectric layers |
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| CNB2003101199461A CN100350573C (en) | 2003-11-27 | 2003-11-27 | Method and structure for forming adhesive force between dielectric layers |
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| CN100350573C true CN100350573C (en) | 2007-11-21 |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6251770B1 (en) * | 1999-06-30 | 2001-06-26 | Lam Research Corp. | Dual-damascene dielectric structures and methods for making the same |
| JP2002319583A (en) * | 2001-02-02 | 2002-10-31 | Samsung Electronics Co Ltd | Dielectric film of semiconductor element and its forming method |
| CN1391270A (en) * | 2001-06-11 | 2003-01-15 | 联华电子股份有限公司 | Process for preparing double-metal inlaid structure |
| US6586347B1 (en) * | 2001-10-16 | 2003-07-01 | Taiwan Semiconductor Manufacturing Company | Method and structure to improve the reliability of multilayer structures of FSG (F-doped SiO2) dielectric layers and metal layers in semiconductor integrated circuits |
| US20030153198A1 (en) * | 2001-07-20 | 2003-08-14 | Conti Richard A. | Carbon-graded layer for improved adhesion of low-k dielectrics to silicon substrates |
-
2003
- 2003-11-27 CN CNB2003101199461A patent/CN100350573C/en not_active Expired - Lifetime
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6251770B1 (en) * | 1999-06-30 | 2001-06-26 | Lam Research Corp. | Dual-damascene dielectric structures and methods for making the same |
| JP2002319583A (en) * | 2001-02-02 | 2002-10-31 | Samsung Electronics Co Ltd | Dielectric film of semiconductor element and its forming method |
| CN1391270A (en) * | 2001-06-11 | 2003-01-15 | 联华电子股份有限公司 | Process for preparing double-metal inlaid structure |
| US20030153198A1 (en) * | 2001-07-20 | 2003-08-14 | Conti Richard A. | Carbon-graded layer for improved adhesion of low-k dielectrics to silicon substrates |
| US6586347B1 (en) * | 2001-10-16 | 2003-07-01 | Taiwan Semiconductor Manufacturing Company | Method and structure to improve the reliability of multilayer structures of FSG (F-doped SiO2) dielectric layers and metal layers in semiconductor integrated circuits |
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| CN1622291A (en) | 2005-06-01 |
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