CN1391270A - Process for preparing double-metal inlaid structure - Google Patents
Process for preparing double-metal inlaid structure Download PDFInfo
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- CN1391270A CN1391270A CN 01129301 CN01129301A CN1391270A CN 1391270 A CN1391270 A CN 1391270A CN 01129301 CN01129301 CN 01129301 CN 01129301 A CN01129301 A CN 01129301A CN 1391270 A CN1391270 A CN 1391270A
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Abstract
A method for preparing double metal inlaid structure includes generating composite dielectric layer composed of the first and the second dielectric layers on substrate, and generating double metal inlaid structure. The Young's coefficient, hardness and dielectric constant of the first dielectric are greater than those of the second one, but its thermal expansibility is less than the latter. Its advantages are high mechanical strength and high resistance to thermal deformation.
Description
The present invention relates to the manufacture method of a kind of multiple layer metal intraconnections (Multi-Level Interconnects), and be particularly related to the manufacture method of a kind of dual-metal inserting (Dual Damascene) structure.
In semiconductor now, because the copper metal itself has low-resistivity, electromigration (Electromigration) characteristic better and the advantage that can grow up with plating mode and chemical vapour deposition (CVD), therefore use the copper metal making metal interconnecting trend that is inevitable really.And, make copper conductor so utilize damascene process An to replace traditional lead technology because copper is difficult for etching.
Yet along with complementary metal oxide semiconductor (Complementary Metal-OxideSemiconductor, CMOS) assembly continues when being contracted to below 0.18 micron, and (Resistance Capacitance Time Delay) becomes crucial influencing factor by the RC time delay that is caused between the multiple layer metal intraconnections.In the technology of multiple layer metal intraconnections, we often concentrate on focus on the electrical property (Electrical Properties) and chemical property (Chemical Properties) of the advanced low-k materials that uses.
For example in advanced person's interconnecting process, for interior metal and dielectric (the Inter-Metal Dielectric that is constituted by advanced low-k materials (Low-KMaterial), IMD) layer, must possess low-k is arranged (Dielectric Constant, k), low leakage electrode stream (Leakage), the high resistance wears intensity (Breakthrough Strength) and good thermal stability (Thermal Stability) in technological temperature.Except above-mentioned character, the key factor when engineering properties of inner metal dielectric layer (Mechanical Properties) and the utilizability (Manufacturability) of producing also are selection.
The method of known formation double-metal inlaid structure is to form cap layer in the substrate that is formed with conductive region.Then, on cap layer, form first dielectric layer, on first dielectric layer, form etch-stop again and write/erase layer.Then, write at etch-stop/erase and form second dielectric layer on the layer.With dual-metal inserting technology in first dielectric layer and in second dielectric layer form dual-metal inserting opening thereafter.At last, in the dual-metal inserting opening, insert the copper metal to finish the making of double-metal inlaid structure.
Yet the double-metal inlaid structure that forms with above-mentioned technology has following problem:
After forming double-metal inlaid structure, follow-up technology is depositing operation for example, often need to be heated to a higher temperature to deposit, and then room temperature falls back, this influence of temperature variation very easily causes the generation of thermal stress (Thermal Stress) because of the difference (Mismatch) of the thermal coefficient of expansion (Coefficient of ThermalExpansion) of different materials.And in above-mentioned technology, the material of first dielectric layer and the employed low-k of second dielectric layer, the same use for example is aromatic hydrocarbons (Aromatic Hydrocarbon), the thermal coefficient of expansion of this macromolecular material (CTE) has sizable difference (Mismatch of CTE) with the thermal coefficient of expansion of metallic copper, therefore under the great situation of variations in temperature, metal and first, can produce the deformation (Strain) of stretching (Elongation) or distortion (Deformation) etc. between second dielectric layer, thereby destroy the integrality of metal interconnecting structure, and cause the problem of metal interconnecting reliability characteristics such as (Reliability).
Secondly, the hardness (Hardness) that said first dielectric layer, the employed advanced low-k materials of second dielectric layer have is lower, therefore carrying out chemical mechanical milling method (ChemicalMechanical Polishing, CMP) or when encapsulating (Packaging), double-metal inlaid structure crumbles quite easily (Collapse) or peels off (Peeling), torsional deformation (Distortion).
And, first, second above-mentioned dielectric layer is as adopting hardness and young's modulus bigger simultaneously, and during the less material of thermal coefficient of expansion, because it has higher dielectric constant, therefore only can increase the RC time delay of multi-metal intra-connection in rain and increase electric capacity, also non-road of dealing with problems.
Therefore, the present invention proposes a kind of manufacture method of double-metal inlaid structure, can effectively reduce the deformation that produces stretching, extension or distortion etc. between metal and the inner metal dielectric layer, and reduce the thermal stress that when the gradient of temperature temperature, produces between metal and the inner metal dielectric layer.
The present invention proposes a kind of manufacture method of double-metal inlaid structure, can effectively increase the mechanical strength of inner metal dielectric layer, prevents from that double-metal inlaid structure from producing to crumble or peel off or torsional deformation.
The present invention proposes a kind of manufacture method of double-metal inlaid structure, and the method is to form cap layer earlier in the substrate that is formed with conductive region.Then, on cap layer, form first dielectric layer, on first dielectric layer, form etch-stop again and write/erase layer.Then, write/erase second dielectric layer that forms on the layer with the first dielectric layer unlike material at etch-stop, and in compound (Hybrid) dielectric layer structure that above-mentioned unlike material is formed, first dielectric layer has higher hardness, young's modulus (Young ' s modulus) and lower thermal coefficient of expansion than second dielectric layer, make composite dielectric layer have heat resistanceheat resistant deformability and mechanical strength preferably, and second dielectric layer has the dielectric constant low than first dielectric layer, makes the capacitance size of composite dielectric layer be unlikely to increase too big.With dual-metal inserting technology in first dielectric layer and in second dielectric layer form dual-metal inserting opening thereafter.At last, in the dual-metal inserting opening, insert the copper metal to finish the making of metal interconnecting.
From the above, key character of the present invention is the composite dielectric layer that forms with unlike material, and the young's modulus of first dielectric layer is big than second dielectric layer, and the thermal coefficient of expansion of first dielectric layer is low than second dielectric layer, its effect is when variations in temperature, serve as the resilient coating of levels, and can strengthen the ability of double-metal inlaid structure opposing thermal deformation.
And the hardness of first dielectric layer and young's modulus are big than second dielectric layer, can strengthen therefore that double-metal inlaid structure is anti-to be crumbled, peel off and the mechanical strength of distortion etc.
Even the dielectric constant of second dielectric layer is little than first dielectric layer, when strengthening stress that the double-metal inlaid structure opposing produces because of the temperature difference and deformation, increase mechanical strength, can suitable in addition control for the capacitance size of composite dielectric layer, unlikelyly cause any great influence.
For above and other objects of the present invention, feature and advantage can be become apparent, preferred embodiment cited below particularly, and conjunction with figs. elaborate:
The drawing explanation:
Figure 1A to Fig. 1 D is the manufacturing process generalized section of a kind of double-metal inlaid structure of preferred embodiment of the present invention;
Fig. 2 is the schematic diagram of electric capacity between electric capacity and inner metal dielectric layer between the double-metal inlaid structure lead of preferred embodiment of the present invention and lead.Description of reference numerals:
100: substrate
102: conductive region
104: cap layer
106: the first dielectric layers
108: etch stop layer
110: the second dielectric layers
112: composite dielectric layer
114: the dual-metal inserting opening
116: barrier layer
118: metal level
120: plain conductor
122: electric capacity between lead
124: the second dielectric layer capacitances
126: the first dielectric layer capacitances
Embodiment:
Figure 1A to Fig. 1 D is the generalized section of manufacturing process of a kind of double-metal inlaid structure of preferred embodiment of the present invention.
At first, please refer to Figure 1A, a substrate 100 at first is provided, in substrate 100, be formed with conductive region 102.Then, form one deck cap layer 104 in substrate 100, its material for example is to be selected from silicon nitride, silica and group that carborundum is formed, and the method for formation for example is chemical vapour deposition (CVD) (Chemical Vapor Deposition, a CVD) method.Then, on cap layer 104, form first dielectric layer 106, its material for example is to be selected from methylic organic silicate glass (Organosilicate, OSG), mix silex glass (the Fluorinated Silicate Glass of fluorine, FSG) form group one of them, the method for formation for example is a chemical vapour deposition technique.These materials in fact also all have the characteristic (k＜3.5) of low-k, have higher mechanical strength, hardness and the thermal coefficient of expansion (about 20 to 10ppm/ ℃) close with copper in addition, are the main reasons of selecting these materials for use.
Then, please refer to Figure 1B, form one deck etch stop layer 108 on first dielectric layer 106, its material for example is to be selected from silicon nitride, silica and group that carborundum is formed, and the method for formation for example is a chemical vapour deposition technique.On etch stop layer 108, form one deck second dielectric layer 110 then, its material for example be selected from aromatic hydrocarbons, porousness aromatic hydrocarbons (Porous Aromatic Hydrocarbon) or porousness silex glass material (Porous Silicate Glass) form group one of them, the method for formation for example is method of spin coating (Spin On Coating).So the inner metal dielectric layer of double-metal inlaid structure is the composite dielectric layer of being made up of first dielectric layer 106 and second dielectric layer 110 of unlike material 112.
Then, please refer to Fig. 1 C, in composite dielectric layer 112, form dual-metal inserting opening 114.Wherein forming the method for dual-metal inserting opening 114, for example is to form one deck photoresist layer (not drawing among the figure) on second dielectric layer 110, defines the lead raceway groove with lithography technology in second dielectric layer 110 again.After removing photoresist layer, in substrate 100, form another layer photoresist layer (not drawing among the figure) again, then carry out lithography technology with formation interlayer hole opening in first dielectric layer 106, and form dual-metal inserting opening 114 by lead raceway groove and interlayer hole opening.
At last, please refer to Fig. 1 D, in dual-metal inserting opening 114, form conformal barrier layer 116 successively and insert metal level 118, to form double-metal inlaid structure.The method that forms bimetal mosaic structure for example is the conformal barrier layer (not drawing among the figure) of deposition one deck in substrate 100, and its material for example is to be selected from tantalum, tantalum nitride and group that tungsten nitride is formed.Then, form metal level (not drawing among the figure) and fill up dual-metal inserting opening 114 on barrier layer, wherein the material of metal level for example is a copper.At last, be etch stop layer with the barrier layer, with the metal level outside the chemical mechanical milling method removal dual-metal inserting opening 114.
In by the formed double-metal inlaid structure of the invention described above preferred embodiment, angle by material science, the high more then anti-twist deformation ability of young's modulus is big more, therefore, the present invention adopts young's modulus to form composite dielectric layers 112 than big slightly first dielectric layer 106 of second dielectric layer 110 and second dielectric layer 110 than low-k, and the more known single material dielectric layer of its anti-twist deformation ability is big.On the other hand, deformation (Strain) be with two materials between the difference (Mismatch of CTE) of thermal coefficient of expansion be directly proportional, because the thermal coefficient of expansion of first dielectric layer 106 is low than 110 thermal coefficient of expansion of second dielectric layer, and the thermal coefficient of expansion of first dielectric layer 106 and the thermal coefficient of expansion of copper are comparatively close, therefore as a complete unit, composite dielectric layer of the present invention can effectively reduce the difference of thermal coefficient of expansion between metal and the dielectric layer, and can lower the deformation that bimetal mosaic structure produces because of different high-temperature technologies.
See again, with regard to the angle of mechanical strength, because the hardness of first dielectric layer 106 and young's modulus are big than the hardness and the young's modulus of second dielectric layer 110, therefore the composite dielectric layer of being formed by first dielectric layer 106 and second dielectric layer 110 112, more known homogenous material dielectric layer has better mechanical strength, and then strengthens that bimetal mosaic structure is anti-to crumble and the ability of antistripping, resistance to deformation.
By the angle of electrical property, as well-known, the capacitance delays effect mainly is to have in mind at second dielectric layer, that is is by the dielectric property between lead and lead, that is capacitance size determines.Fig. 2 is the schematic diagram of electric capacity between electric capacity and inner metal dielectric layer between the double-metal inlaid structure lead of preferred embodiment of the present invention and lead.Please refer to Fig. 2, because the dielectric constant of second dielectric layer 110 is little than the dielectric constant of first dielectric layer 106, so electric capacity 122 can't be affected between lead, and then makes electric capacity can maintain less numerical value.
On the other hand, in composite dielectric layer 112, the capacitance size of composite dielectric layer 112 can be represented by following mathematical expression:
The electric capacity of 1/ composite dielectric interlayer=(1/ first dielectric layer capacitance 126)+(1/ second dielectric layer capacitance 124)
And the size and the medium thickness of electric capacity are inversely proportional to.
Therefore, though the dielectric constant of first dielectric layer 106 is high slightly than second dielectric layer 110, we still can pass through the thickness or the adjustment of design rule, make that 112 influences with the capacitance delays effect of composite dielectric layer are minimized.
By the invention described above preferred embodiment as can be known, the present invention has following advantage:
1. in composite dielectric layer of the present invention, the young's modulus of first dielectric layer is big than the young's modulus of second dielectric layer, and the thermal coefficient of expansion of first dielectric layer is low than the thermal coefficient of expansion of second dielectric layer, and the thermal coefficient of expansion of first dielectric layer and the thermal coefficient of expansion of copper are comparatively close, so, composite dielectric layer of the present invention can effectively reduce the difference of thermal coefficient of expansion between metal and the dielectric layer, and can reduce thermal stress and deformation that bimetal mosaic structure produces because of different technological temperatures.
2. in composite dielectric layer of the present invention, because the hardness of first dielectric layer and young's modulus are big than the hardness and the young's modulus of second dielectric layer, therefore have better mechanical strength, and then strengthen that bimetal mosaic structure is anti-to crumble and the ability of antistripping, resistance to deformation.
3. in composite dielectric layer of the present invention, when strengthening the thermal stress and deformation and increase mechanical strength of bimetal mosaic structure opposing because of temperature difference generation, can not impact for the capacitance size between lead, and the effective capacitance size of composite dielectric interlayer, also can pass through the thickness or the adjustment of design rule, make suffered influence minimize.
Though the present invention with a preferred embodiment openly as above; but it is not in order to qualification the present invention, any those skilled in the art, without departing from the spirit and scope of the present invention; can do different changes and modification, but this protection scope of the present invention should be with being as the criterion that claims were limited.
Claims (10)
1. the manufacture method of a double-metal inlaid structure, this method comprises the following steps:
One substrate is provided, in this substrate, has been formed with a conductive region;
In this substrate, form a cap layer;
In this substrate, form one first dielectric layer;
On this first dielectric layer, form an etch stop layer;
On this etch stop layer, form one second dielectric layer;
Form a pair of heavy metal in this second dielectric layer and in first dielectric layer and inlay opening;
In this dual-metal inserting opening, form a conformal barrier layer and a metal level in regular turn;
It is characterized in that: young's modulus of this first dielectric layer (Young ' s modulus) and hardness (Hardness) are little than the thermal coefficient of expansion of this second dielectric layer than the young's modulus and the hardness thermal coefficient of expansion big, this first dielectric layer of this second dielectric layer, that is the thermal coefficient of expansion of this first dielectric layer and metallic copper has less difference, and the dielectric constant of this second dielectric layer is little than the dielectric constant of this first dielectric layer.
2. the manufacture method of double-metal inlaid structure according to claim 1 is characterized in that: this first dielectric layer comprises the methylic organic silicate glass (Organosilicate) that forms with chemical vapour deposition technique.
3. the manufacture method of double-metal inlaid structure according to claim 1 is characterized in that: this first dielectric layer comprises the silex glass of mixing fluorine (Fluorinated Silicate Glass) that forms with chemical vapour deposition technique.
4. the manufacture method of double-metal inlaid structure according to claim 1 is characterized in that: the material of this second dielectric layer be selected from aromatic hydrocarbons (AromaticHydrocarbon), porousness aromatic hydrocarbons (Porous Aromatic Hydrocarbon) and porousness silex glass material (Porous Silicate Glass) form group one of them.
5. the manufacture method of double-metal inlaid structure according to claim 4, it is characterized in that: this second dielectric layer formation method comprises method of spin coating.
6. the manufacture method of a composite dielectric layer, this method comprises the following steps:
One substrate is provided;
In this substrate, form one first dielectric layer;
On this first dielectric layer, form one second dielectric layer, and form a composite dielectric layer by this first dielectric layer and this second dielectric layer;
It is characterized in that: the young's modulus of this first dielectric layer and hardness are little than the thermal coefficient of expansion of this second dielectric layer than the young's modulus and the hardness thermal coefficient of expansion big, this first dielectric layer of this second dielectric layer, that is the thermal coefficient of expansion of this first dielectric layer and metallic copper has less difference, and the dielectric constant of this second dielectric layer is little than the dielectric constant of this first dielectric layer.
7. the manufacture method of composite dielectric layer according to claim 6 is characterized in that: this first dielectric layer comprises the methylic organic silicate glass that forms with chemical vapour deposition technique.
8. the manufacture method of composite dielectric layer according to claim 6 is characterized in that: this first dielectric layer comprises the silex glass of mixing fluorine that forms with chemical vapour deposition technique.
9. the manufacture method of composite dielectric layer according to claim 6 is characterized in that: the material of this second dielectric layer be selected from group that aromatic hydrocarbons, porousness aromatic hydrocarbons and porousness silex glass material organized one of them.
10. the manufacture method of composite dielectric layer according to claim 6 is characterized in that: the formation method of this second dielectric layer comprises method of spin coating.
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| CN 01129301 CN1391270A (en) | 2001-06-11 | 2001-06-11 | Process for preparing double-metal inlaid structure |
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| CN 01129301 CN1391270A (en) | 2001-06-11 | 2001-06-11 | Process for preparing double-metal inlaid structure |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100350573C (en) * | 2003-11-27 | 2007-11-21 | 联华电子股份有限公司 | Method and structure for forming adhesive force between dielectric layers |
| CN101330040B (en) * | 2007-06-18 | 2011-03-23 | 中芯国际集成电路制造(上海)有限公司 | Interconnection layer top layer wiring layer of semiconductor device and method for forming the same |
-
2001
- 2001-06-11 CN CN 01129301 patent/CN1391270A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100350573C (en) * | 2003-11-27 | 2007-11-21 | 联华电子股份有限公司 | Method and structure for forming adhesive force between dielectric layers |
| CN101330040B (en) * | 2007-06-18 | 2011-03-23 | 中芯国际集成电路制造(上海)有限公司 | Interconnection layer top layer wiring layer of semiconductor device and method for forming the same |
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