CN100350403C - 用于过程状态监测和端点检测的斜率对门限变换的方法及设备 - Google Patents

用于过程状态监测和端点检测的斜率对门限变换的方法及设备 Download PDF

Info

Publication number
CN100350403C
CN100350403C CNB2003801057276A CN200380105727A CN100350403C CN 100350403 C CN100350403 C CN 100350403C CN B2003801057276 A CNB2003801057276 A CN B2003801057276A CN 200380105727 A CN200380105727 A CN 200380105727A CN 100350403 C CN100350403 C CN 100350403C
Authority
CN
China
Prior art keywords
value
threshold
slope
monitored
transition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB2003801057276A
Other languages
English (en)
Chinese (zh)
Other versions
CN1726479A (zh
Inventor
Y·戈特基斯
V·卡茨
D·赫姆克尔
R·基斯特勒
N·J·布赖特
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lam Research Corp
Original Assignee
Lam Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Research Corp filed Critical Lam Research Corp
Publication of CN1726479A publication Critical patent/CN1726479A/zh
Application granted granted Critical
Publication of CN100350403C publication Critical patent/CN100350403C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
    • G05B23/00—Testing or monitoring of control systems or parts thereof
    • G05B23/02—Electric testing or monitoring
    • G05B23/0205—Electric testing or monitoring by means of a monitoring system capable of detecting and responding to faults
    • G05B23/0218—Electric testing or monitoring by means of a monitoring system capable of detecting and responding to faults characterised by the fault detection method dealing with either existing or incipient faults
    • G05B23/0243—Electric testing or monitoring by means of a monitoring system capable of detecting and responding to faults characterised by the fault detection method dealing with either existing or incipient faults model based detection method, e.g. first-principles knowledge model
    • G05B23/0254—Electric testing or monitoring by means of a monitoring system capable of detecting and responding to faults characterised by the fault detection method dealing with either existing or incipient faults model based detection method, e.g. first-principles knowledge model based on a quantitative model, e.g. mathematical relationships between inputs and outputs; functions: observer, Kalman filter, residual calculation, Neural Networks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Evolutionary Computation (AREA)
  • Artificial Intelligence (AREA)
  • Mathematical Physics (AREA)
  • Automation & Control Theory (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Drying Of Semiconductors (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
CNB2003801057276A 2002-12-13 2003-12-11 用于过程状态监测和端点检测的斜率对门限变换的方法及设备 Expired - Fee Related CN100350403C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/318,967 US6859765B2 (en) 2002-12-13 2002-12-13 Method and apparatus for slope to threshold conversion for process state monitoring and endpoint detection
US10/318,967 2002-12-13

Publications (2)

Publication Number Publication Date
CN1726479A CN1726479A (zh) 2006-01-25
CN100350403C true CN100350403C (zh) 2007-11-21

Family

ID=32506518

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB2003801057276A Expired - Fee Related CN100350403C (zh) 2002-12-13 2003-12-11 用于过程状态监测和端点检测的斜率对门限变换的方法及设备

Country Status (8)

Country Link
US (2) US6859765B2 (enExample)
EP (1) EP1570363B1 (enExample)
JP (2) JP2006510228A (enExample)
KR (1) KR101007159B1 (enExample)
CN (1) CN100350403C (enExample)
AU (1) AU2003303494A1 (enExample)
TW (1) TWI232530B (enExample)
WO (1) WO2004061693A1 (enExample)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI240326B (en) * 2002-10-31 2005-09-21 Tokyo Electron Ltd Method and apparatus for determining an etch property using an endpoint signal
US6859765B2 (en) * 2002-12-13 2005-02-22 Lam Research Corporation Method and apparatus for slope to threshold conversion for process state monitoring and endpoint detection
US7186574B2 (en) * 2004-09-30 2007-03-06 Hitachi Global Storage Technologies Netherlands B.V. CMP process metrology test structures
US7537511B2 (en) * 2006-03-14 2009-05-26 Micron Technology, Inc. Embedded fiber acoustic sensor for CMP process endpoint
US7755011B2 (en) * 2006-06-23 2010-07-13 Lockheed Martin Corporation Target maneuver detection
US8106651B2 (en) * 2008-04-17 2012-01-31 Novellus Systems, Inc. Methods and apparatuses for determining thickness of a conductive layer
US8538572B2 (en) * 2009-06-30 2013-09-17 Lam Research Corporation Methods for constructing an optimal endpoint algorithm
US8473089B2 (en) * 2009-06-30 2013-06-25 Lam Research Corporation Methods and apparatus for predictive preventive maintenance of processing chambers
US8983631B2 (en) * 2009-06-30 2015-03-17 Lam Research Corporation Arrangement for identifying uncontrolled events at the process module level and methods thereof
US8618807B2 (en) * 2009-06-30 2013-12-31 Lam Research Corporation Arrangement for identifying uncontrolled events at the process module level and methods thereof
CN102541719A (zh) * 2010-12-24 2012-07-04 鸿富锦精密工业（深圳）有限公司 排除错误观测值的系统及方法
US9403254B2 (en) * 2011-08-17 2016-08-02 Taiwan Semiconductor Manufacturing Company, Ltd. Methods for real-time error detection in CMP processing
US9308618B2 (en) * 2012-04-26 2016-04-12 Applied Materials, Inc. Linear prediction for filtering of data during in-situ monitoring of polishing
US20140163907A1 (en) * 2012-12-10 2014-06-12 General Electric Company Systems and methods for fault detection
JP6625098B2 (ja) * 2017-07-20 2019-12-25 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理システム、半導体装置の製造方法およびプログラム
KR102414470B1 (ko) 2017-11-16 2022-06-30 어플라이드 머티어리얼스, 인코포레이티드 연마 패드 마모율 모니터링을 위한 예측 필터
JP6525044B1 (ja) * 2017-12-13 2019-06-05 オムロン株式会社 監視システム、学習装置、学習方法、監視装置及び監視方法
KR102103144B1 (ko) * 2018-03-14 2020-04-22 (주)아이티공간 구동부의 정밀 예지 보전방법
KR102103150B1 (ko) 2018-03-14 2020-04-22 (주)아이티공간 구동부의 정밀 예지 보전방법
KR102103145B1 (ko) * 2018-03-14 2020-04-22 (주)아이티공간 구동부의 정밀 예지 보전방법
KR102103147B1 (ko) 2018-03-14 2020-04-22 (주)아이티공간 구동부의 정밀 예지 보전방법
KR102103143B1 (ko) * 2018-03-14 2020-04-22 (주)아이티공간 구동부의 정밀 예지 보전방법
CN109118274B (zh) * 2018-07-25 2021-11-16 武汉轻工大学 任务点去噪分类方法、系统、终端设备及存储介质
KR102735952B1 (ko) * 2019-03-08 2024-11-28 케이엘에이 코포레이션 미스레지스트레이션 측정의 동적 개선
US11455154B2 (en) 2020-12-10 2022-09-27 International Business Machines Corporation Vector-based identification of software dependency relationships

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5091963A (en) * 1988-05-02 1992-02-25 The Standard Oil Company Method and apparatus for inspecting surfaces for contrast variations
CN1362694A (zh) * 2001-01-04 2002-08-07 鸿友科技股份有限公司 判断扫描器扫描所得的影像是否发生掉线性形的方法
US6449571B1 (en) * 1999-07-09 2002-09-10 Mykrolis Corporation System and method for sensor response linearization

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56114329A (en) * 1980-02-15 1981-09-08 Chiyou Lsi Gijutsu Kenkyu Kumiai Method for sensing time of completion of dry etching
US4809196A (en) * 1986-04-10 1989-02-28 International Business Machines Corporation Method for designating/sorting semiconductor wafers according to predicted oxygen precipitation behavior
GB8703931D0 (en) * 1987-02-19 1993-05-05 British Aerospace Tracking systems
GB2214813A (en) * 1988-01-14 1989-09-13 Stuart Charles Webb Rate-responsive pacemaker
US4836213A (en) * 1988-02-25 1989-06-06 Nippon Colin Co., Ltd. Pressure control system for continuous blood pressure monitor transducer
JPH0428224A (ja) * 1990-05-23 1992-01-30 Seiko Instr Inc 薄膜のエッチング方法
JP3117355B2 (ja) * 1993-03-04 2000-12-11 東京エレクトロン株式会社 プラズマ処理の終点検出方法
JP3400821B2 (ja) * 1993-06-08 2003-04-28 松下電器産業株式会社 データ自動監視システム
US5704362A (en) * 1993-08-13 1998-01-06 Johnson & Johnson Medical, Inc. Method for oscillometric blood pressure determination employing curve fitting
US5444637A (en) * 1993-09-28 1995-08-22 Advanced Micro Devices, Inc. Programmable semiconductor wafer for sensing, recording and retrieving fabrication process conditions to which the wafer is exposed
JPH08148475A (ja) * 1994-11-16 1996-06-07 Sony Corp エッチング処理装置
US6538723B2 (en) * 1996-08-05 2003-03-25 Nikon Corporation Scanning exposure in which an object and pulsed light are moved relatively, exposing a substrate by projecting a pattern on a mask onto the substrate with pulsed light from a light source, light sources therefor, and methods of manufacturing
US5828567A (en) * 1996-11-07 1998-10-27 Rosemount Inc. Diagnostics for resistance based transmitter
US6063028A (en) * 1997-03-20 2000-05-16 Luciano; Joanne Sylvia Automated treatment selection method
US6529460B1 (en) * 1998-01-31 2003-03-04 Seagate Technology Llc Detection of pulse peak instance and amplitude in a storage drive
JP4227301B2 (ja) * 1998-02-03 2009-02-18 東京エレクトロンＡｔ株式会社 半導体プラズマ処理における終点検出方法
US6780657B2 (en) * 1998-03-19 2004-08-24 Kabushiki Kaisha Toshiba Temperature measuring method and apparatus, measuring method for the thickness of the formed film, measuring apparatus for the thickness of the formed film thermometer for wafers
US6049220A (en) * 1998-06-10 2000-04-11 Boxer Cross Incorporated Apparatus and method for evaluating a wafer of semiconductor material
CA2342638A1 (en) * 1998-10-19 2000-04-27 Qinetiq Limited Layer processing
US6289288B1 (en) * 1999-03-01 2001-09-11 Chelsea Group Ltd Method of determining measured gas data with remote sensors
US6475153B1 (en) * 2000-05-10 2002-11-05 Motorola Inc. Method for obtaining blood pressure data from optical sensor
GB2372324B (en) * 2000-11-10 2004-12-22 Leamount Ltd Air flow measurement
JP3993396B2 (ja) * 2001-03-30 2007-10-17 株式会社東芝 半導体装置の製造方法
US6662116B2 (en) * 2001-11-30 2003-12-09 Exxonmobile Research And Engineering Company Method for analyzing an unknown material as a blend of known materials calculated so as to match certain analytical data and predicting properties of the unknown based on the calculated blend
US6714338B2 (en) * 2002-05-16 2004-03-30 Texas Instruments Incorporated MEM's mirror internal sensor linearization based on driver linearity
US6859765B2 (en) * 2002-12-13 2005-02-22 Lam Research Corporation Method and apparatus for slope to threshold conversion for process state monitoring and endpoint detection

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5091963A (en) * 1988-05-02 1992-02-25 The Standard Oil Company Method and apparatus for inspecting surfaces for contrast variations
US6449571B1 (en) * 1999-07-09 2002-09-10 Mykrolis Corporation System and method for sensor response linearization
CN1362694A (zh) * 2001-01-04 2002-08-07 鸿友科技股份有限公司 判断扫描器扫描所得的影像是否发生掉线性形的方法

Also Published As

Publication number Publication date
KR20050084998A (ko) 2005-08-29
AU2003303494A1 (en) 2004-07-29
WO2004061693A1 (en) 2004-07-22
TW200414396A (en) 2004-08-01
KR101007159B1 (ko) 2011-01-12
JP2006510228A (ja) 2006-03-23
US6859765B2 (en) 2005-02-22
US20050125202A1 (en) 2005-06-09
US7010468B2 (en) 2006-03-07
TWI232530B (en) 2005-05-11
EP1570363A1 (en) 2005-09-07
CN1726479A (zh) 2006-01-25
EP1570363A4 (en) 2006-04-12
US20040117054A1 (en) 2004-06-17
JP2012238882A (ja) 2012-12-06
EP1570363B1 (en) 2011-05-18

Similar Documents

Publication Publication Date Title
CN100350403C (zh) 用于过程状态监测和端点检测的斜率对门限变换的方法及设备
JP2006510228A5 (enExample)
CN116713892B (zh) 用于晶圆薄膜磨削的终点检测方法及设备
JP6336982B2 (ja) その場測定のための光計測
JP5102488B2 (ja) 製造装置における障害検出の方法
JP4365109B2 (ja) プラズマ処理装置
US7301645B2 (en) In-situ critical dimension measurement
WO2008127539A1 (en) Machine condition monitoring using discontinuity detection
CN111537076B (zh) 一种抑制红外设备在启动阶段温度漂移的方法及系统
Wong et al. Endpoint prediction for polysilicon plasma etch via optical emission interferometry
CN1791971A (zh) 制造设备中的差错检测方法
KR101255326B1 (ko) 박막 두께 모니터링 장치, 시스템 및 방법
US6643559B2 (en) Method for monitoring a semiconductor fabrication process for processing a substrate
US7299154B1 (en) Method and apparatus for fast disturbance detection and classification
KR101895707B1 (ko) 플라즈마 공정의 식각 종료점 진단방법
Hanish et al. Modeling and algorithm development for automated optical endpointing of an HBT emitter etch
CN118758199B (zh) 用于钢管生产的钢管通径测量方法及测量装置
WO2025253114A1 (en) Measuring thin film thickness
WO2025253113A1 (en) Measuring thin film thickness
KR100868083B1 (ko) 웨이브릿을 이용한 플라즈마장비의 센서정보 감시방법
Hamada et al. Super-multipoint thickness measurement technology using optical macro inspection system
CN119493938A (zh) 一种晶圆图形台阶高度测量方法、装置、设备及介质
JP2016009720A (ja) 推定方法及びプラズマ処理装置
JPH0521395A (ja) エツチング終点の検出方法
JPH06341813A (ja) 膜厚測定方法および装置

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20071121

Termination date: 20161211

CF01 Termination of patent right due to non-payment of annual fee