JP2006510228A - 処理状態モニタリングと終了点検出とのための、傾斜から閾値へ変換する方法および装置 - Google Patents

処理状態モニタリングと終了点検出とのための、傾斜から閾値へ変換する方法および装置 Download PDF

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Publication number
JP2006510228A
JP2006510228A JP2004565459A JP2004565459A JP2006510228A JP 2006510228 A JP2006510228 A JP 2006510228A JP 2004565459 A JP2004565459 A JP 2004565459A JP 2004565459 A JP2004565459 A JP 2004565459A JP 2006510228 A JP2006510228 A JP 2006510228A
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value
monitored
transition point
threshold
difference
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JP2006510228A5 (enExample
Inventor
アーヒル ゴットキス，
ブラディミル カッツ，
デイビッド ヘムカー，
ロドニー キスラー，
ニコラス ジェイ． ブライト，
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Lam Research Corp
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Lam Research Corp
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    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
    • G05B23/00—Testing or monitoring of control systems or parts thereof
    • G05B23/02—Electric testing or monitoring
    • G05B23/0205—Electric testing or monitoring by means of a monitoring system capable of detecting and responding to faults
    • G05B23/0218—Electric testing or monitoring by means of a monitoring system capable of detecting and responding to faults characterised by the fault detection method dealing with either existing or incipient faults
    • G05B23/0243—Electric testing or monitoring by means of a monitoring system capable of detecting and responding to faults characterised by the fault detection method dealing with either existing or incipient faults model based detection method, e.g. first-principles knowledge model
    • G05B23/0254—Electric testing or monitoring by means of a monitoring system capable of detecting and responding to faults characterised by the fault detection method dealing with either existing or incipient faults model based detection method, e.g. first-principles knowledge model based on a quantitative model, e.g. mathematical relationships between inputs and outputs; functions: observer, Kalman filter, residual calculation, Neural Networks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Evolutionary Computation (AREA)
  • Artificial Intelligence (AREA)
  • Mathematical Physics (AREA)
  • Automation & Control Theory (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Drying Of Semiconductors (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
JP2004565459A 2002-12-13 2003-12-11 処理状態モニタリングと終了点検出とのための、傾斜から閾値へ変換する方法および装置 Pending JP2006510228A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/318,967 US6859765B2 (en) 2002-12-13 2002-12-13 Method and apparatus for slope to threshold conversion for process state monitoring and endpoint detection
PCT/US2003/039778 WO2004061693A1 (en) 2002-12-13 2003-12-11 Method and apparatus for slope to threshold conversion for process state monitoring and endpoint detection

Related Child Applications (1)

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JP2012164925A Division JP2012238882A (ja) 2002-12-13 2012-07-25 処理状態モニタリングと終了点検出とのための、傾斜から閾値へ変換する方法および装置

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JP2006510228A true JP2006510228A (ja) 2006-03-23
JP2006510228A5 JP2006510228A5 (enExample) 2011-07-28

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JP2004565459A Pending JP2006510228A (ja) 2002-12-13 2003-12-11 処理状態モニタリングと終了点検出とのための、傾斜から閾値へ変換する方法および装置
JP2012164925A Pending JP2012238882A (ja) 2002-12-13 2012-07-25 処理状態モニタリングと終了点検出とのための、傾斜から閾値へ変換する方法および装置

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Country Status (8)

Country Link
US (2) US6859765B2 (enExample)
EP (1) EP1570363B1 (enExample)
JP (2) JP2006510228A (enExample)
KR (1) KR101007159B1 (enExample)
CN (1) CN100350403C (enExample)
AU (1) AU2003303494A1 (enExample)
TW (1) TWI232530B (enExample)
WO (1) WO2004061693A1 (enExample)

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US8473089B2 (en) * 2009-06-30 2013-06-25 Lam Research Corporation Methods and apparatus for predictive preventive maintenance of processing chambers
US8983631B2 (en) * 2009-06-30 2015-03-17 Lam Research Corporation Arrangement for identifying uncontrolled events at the process module level and methods thereof
US8618807B2 (en) * 2009-06-30 2013-12-31 Lam Research Corporation Arrangement for identifying uncontrolled events at the process module level and methods thereof
CN102541719A (zh) * 2010-12-24 2012-07-04 鸿富锦精密工业（深圳）有限公司 排除错误观测值的系统及方法
US9403254B2 (en) * 2011-08-17 2016-08-02 Taiwan Semiconductor Manufacturing Company, Ltd. Methods for real-time error detection in CMP processing
US9308618B2 (en) * 2012-04-26 2016-04-12 Applied Materials, Inc. Linear prediction for filtering of data during in-situ monitoring of polishing
US20140163907A1 (en) * 2012-12-10 2014-06-12 General Electric Company Systems and methods for fault detection
JP6625098B2 (ja) * 2017-07-20 2019-12-25 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理システム、半導体装置の製造方法およびプログラム
KR102414470B1 (ko) 2017-11-16 2022-06-30 어플라이드 머티어리얼스, 인코포레이티드 연마 패드 마모율 모니터링을 위한 예측 필터
JP6525044B1 (ja) * 2017-12-13 2019-06-05 オムロン株式会社 監視システム、学習装置、学習方法、監視装置及び監視方法
KR102103144B1 (ko) * 2018-03-14 2020-04-22 (주)아이티공간 구동부의 정밀 예지 보전방법
KR102103150B1 (ko) 2018-03-14 2020-04-22 (주)아이티공간 구동부의 정밀 예지 보전방법
KR102103145B1 (ko) * 2018-03-14 2020-04-22 (주)아이티공간 구동부의 정밀 예지 보전방법
KR102103147B1 (ko) 2018-03-14 2020-04-22 (주)아이티공간 구동부의 정밀 예지 보전방법
KR102103143B1 (ko) * 2018-03-14 2020-04-22 (주)아이티공간 구동부의 정밀 예지 보전방법
CN109118274B (zh) * 2018-07-25 2021-11-16 武汉轻工大学 任务点去噪分类方法、系统、终端设备及存储介质
KR102735952B1 (ko) * 2019-03-08 2024-11-28 케이엘에이 코포레이션 미스레지스트레이션 측정의 동적 개선
US11455154B2 (en) 2020-12-10 2022-09-27 International Business Machines Corporation Vector-based identification of software dependency relationships

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JPH06318572A (ja) * 1993-03-04 1994-11-15 Tokyo Electron Yamanashi Kk プラズマ処理の終点検出方法およびその装置
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WO1999040617A1 (en) * 1998-02-03 1999-08-12 Tokyo Electron Yamanashi Limited End point detecting method for semiconductor plasma processing

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JPS56114329A (en) * 1980-02-15 1981-09-08 Chiyou Lsi Gijutsu Kenkyu Kumiai Method for sensing time of completion of dry etching
JPH0428224A (ja) * 1990-05-23 1992-01-30 Seiko Instr Inc 薄膜のエッチング方法
JPH06318572A (ja) * 1993-03-04 1994-11-15 Tokyo Electron Yamanashi Kk プラズマ処理の終点検出方法およびその装置
JPH08148475A (ja) * 1994-11-16 1996-06-07 Sony Corp エッチング処理装置
WO1999040617A1 (en) * 1998-02-03 1999-08-12 Tokyo Electron Yamanashi Limited End point detecting method for semiconductor plasma processing

Also Published As

Publication number Publication date
KR20050084998A (ko) 2005-08-29
AU2003303494A1 (en) 2004-07-29
WO2004061693A1 (en) 2004-07-22
TW200414396A (en) 2004-08-01
KR101007159B1 (ko) 2011-01-12
CN100350403C (zh) 2007-11-21
US6859765B2 (en) 2005-02-22
US20050125202A1 (en) 2005-06-09
US7010468B2 (en) 2006-03-07
TWI232530B (en) 2005-05-11
EP1570363A1 (en) 2005-09-07
CN1726479A (zh) 2006-01-25
EP1570363A4 (en) 2006-04-12
US20040117054A1 (en) 2004-06-17
JP2012238882A (ja) 2012-12-06
EP1570363B1 (en) 2011-05-18

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