CN100348983C - Circuit film for micro electromechanical probe and fabricating method thereof - Google Patents
Circuit film for micro electromechanical probe and fabricating method thereof Download PDFInfo
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- CN100348983C CN100348983C CNB2005100076764A CN200510007676A CN100348983C CN 100348983 C CN100348983 C CN 100348983C CN B2005100076764 A CNB2005100076764 A CN B2005100076764A CN 200510007676 A CN200510007676 A CN 200510007676A CN 100348983 C CN100348983 C CN 100348983C
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Abstract
The present invention relates to a micro electromechanical probe circuit film and a fabricating method thereof. The micro electromechanical probe circuit film is fabricated by adopting a semiconductor producing process. A probe, an electronic circuit, circuit connecting points, a probe supporting body and a dielectric layer are all integrated and fabricated into an integral multi-layer film structure with flexibility. The present invention has the structural characteristics that the electronic circuit is arranged inside the dielectric layer, and the multi-layer circuit layout can be arranged; the probe and most of the circuit connecting points are buried inside the dielectric layer and are in electric connection with the electronic circuit; the probe and the end parts of the circuit connecting points convexly extend out of the film, so the structure of the probe is firm; the skewing phenomenon is not easy to occur, and the damage can be avoided. Particularly, in the micro electromechanical probe circuit film, a buffering mechanism of the probe is composed of the probe supporting body having elasticity, and the thickness of the probe supporting body is blocked up; thus, the present invention has the function of preventing the probe from bearing excessive pressure.
Description
Technical field
The invention relates to a kind of mems probe circuit film and method for making thereof, refer to that especially manufacture of semiconductor is connected point with probe, electronic circuit, circuit and the probe supporting body is integrated the mems probe circuit film of making the tool pliability and being the integral multi-layer membrane structure with dielectric layer to use.
Background technology
Under semiconductor technology is grown up fast, many consumption electronic products are done littler and littler, the density of integrated circuit and associated component is relative to be improved, and the pin number increases and spacing is dwindled, add the lifting of encapsulation technology, make the circuit junction layout of integrated circuit surface, no longer just layout is in the periphery of integrated circuit, but is arranged; Simultaneously, the material of the circuit junction of integrated circuit surface has also been used circuit junction pads such as tin ball, golden projection, no longer is simple aluminium pad.Add the arriving in wireless telecommunications epoch and the requirement of electronic product arithmetic speed, in test, more increase the difficulty of high-frequency test.Also, make measuring technology increase many difficulty, also cause the bottleneck place of industry production capacity, cost and WeiLai Technology development because these are progressive.
Existing wafer sort card structure, in order to solve the predicament that measuring technology faces, to improve test speed, reduce testing cost and to reduce the non-defective unit erroneous judgement, develop into various vertical probe carbs, micro electronmechanical rigid probe card and various films test card from conventional boom-mounted elastic probe card.
Wherein vertical probe carb has mainly improved the difficulty of arranged test, but shortcoming is to make difficulty, cost an arm and a leg, and still is difficult for toward littler spacing development, and main spacing still rests on the test of the above circuit junction pad of 100um.
And micro electronmechanical rigid probe card is with the little rigid probe of manufacture of semiconductor fabrication techniques on multilayer ceramic substrate, micro electronmechanical rigid probe card has mainly improved the difficulty of arranged and high-frequency test test, but shortcoming the be probe excessive rigidity and the elasticity of not having, when probe and circuit under test contact pad contact pressure are excessive, damage the circuit junction pad of determinand easily by pressure, and probe is not had elasticity, if the flatness of the circuit junction pad of probe or determinand is bad, the situation that probe does not touch the circuit junction pad just takes place easily.
And existing a kind of films test card 20 structures shown in a figure of Fig. 1, are made probe 21 or metal coupling on the circuit junction on various pliability circuit films or circuit soft board 28 surfaces.
The probe 21 of this films test card 20 is only by the surface of its bottom attached to pliability circuit soft board 28; and do not coat the structural strength that the protection structure is strengthened probe 21 around the probe 21; so probe 21 structures of this films test card 20 in fact quite built on the sand; once probe 21 is when being under pressure; shown in the b figure of Fig. 1; probe 21 is easy to generate crooked or sagging, and this phenomenon can cause the test result distortion.
After the probe 21 of this on the other hand films test card 20 completes, usually must be assembled on other load carrier, but because circuit soft board 28 is the pliability object, and the back side of circuit soft board 28 does not have bed hedgehopping to be increased thickness or is provided with fixed mechanism in the zone that is provided with probe 21 relatively, it is crooked and just uneven to make that probe 21 produces probe 21 easily because of circuit soft board 28 is crooked, shown in the c figure of Fig. 1, this defective can increase the assembling difficulty of this films test card 20.
Because probe 21 structures of this films test card 20 have above-described defective, be difficult for layout and be arranged, so the test-purpose of this films test card 20 is restricted, only be applicable to that usually the test circuit contact pad is to be arranged in IC product or panel on every side.
Summary of the invention
Fundamental purpose of the present invention is promptly providing a kind of a kind of mems probe circuit film made from manufacture of semiconductor, a kind of application manufacture of semiconductor is with probe, electronic circuit, circuit is connected point and the probe supporting body is integrated the multi-layer film structure of making the tool pliability and being integral structure with dielectric layer, its principal character comprises: by the non-conductive dielectric layer and the probe of tool flexibility, electronic circuit, circuit linking point and probe supporting body constitute the multilayer film of integral structure jointly, electronic circuit is embedding and be arranged in the dielectric layer inside of this film, also heeling-in inner and electronic circuit formation electric connection of major part with probe and circuit linking point at the dielectric layer of film, with form end that probe and circuit be connected point and protrude out outside at film, especially, this probe supporting body is convexly set in the relative back side that film wherein simultaneously protrudes out probe tips, and constitutes the buffer gear of probe.
The method for making of a kind of mems probe circuit film of the present invention is made to use manufacture of semiconductor, it is characterized in that, comprises the following steps:
A, provide a processing procedure substrate;
B, to the processing procedure substrate fabrication of step a can execution in step e separable interface;
C, utilize the processing procedure substrate of completing steps b to carry out the probe circuit film to make, making has prefabricated various electronic circuit, probe structure and circuit to be connected the probe circuit pellicular cascade of point on separable interface;
D, the probe circuit film of completing steps c continued make the probe supporting body, make the probe circuit film have the probe supporting body of height of projection;
Separable interface between e, destruction processing procedure substrate and the probe circuit film makes probe circuit film and processing procedure substrate be separated from each other and take off;
F, the probe circuit film that step e is taken off carry out follow-up microstructure processing and make a kind of mems probe circuit film.
The probe structure of this mems probe circuit film, stretch out and be integral structure by the dielectric layer inside of mems probe circuit film, make the probe bodies major part be subjected to the coating and the protection of dielectric layer, so probe quite firmly is difficult for producing crooked phenomenon and can avoiding sustaining damage; And the electronic circuit layout can establish in dielectric layer inside and be the multilayer circuit layout, so the probe of this mems probe circuit film can be high-density arrangement and be arranged.
Another fundamental purpose of the present invention is the method for making of making above-mentioned mems probe circuit film providing, and its processing procedure system is applied to the manufacture of semiconductor technology, and method step comprises: provide and can carry out with the processing procedure substrate of semiconductor technology in surface working; Separable interface is made; The probe circuit film is made; The probe supporting body is made; Separable interface is separated; And follow-up microstructure processing.
As a kind of improvement of the present invention, probe and the circuit of making the probe circuit film at step c are connected in the processing procedure of point, form the various groove that constitutes probe and circuit linking dot structure with dielectric layer, and insert metal material in groove; When pending step f carries out the processing of follow-up microstructure to the probe circuit film that takes off, will coat probe or circuit again and be connected the dielectric layer etch of putting, to make the micro-electromechanical film detecting head.
As another improvement of the present invention, make in the processing procedure of microstructure of probe circuit film at step c, form various groove with dielectric layer, and in groove, insert after the metal material, use photoresistance above metal material, to form various figure with little shadow technology, with etching or electroplating process metal material is done microstructure processing again; When pending step f carries out the processing of follow-up microstructure to the probe circuit film that takes off, will coat the dielectric layer etch of microstructure again, to make the micro-electromechanical film detecting head.
As another kind of improvement the of the present invention, at step f the probe circuit film that takes off is carried out in the process of etching dielectric layer, the dielectric layer around probe or the microstructure is set as protection structure higher and formation probe or microstructure.
As another improvement of the present invention, 1) when steps d is carried out probe circuit film making probe supporting body, the probe supporting body is sticked together on the probe circuit film with surface mount technology; Or 2) when steps d is made the probe supporting body, form the groove of probe supporting body with the definition of web plate technology, and after probe supporting body material being inserted in the groove of web plate, again web plate is removed and make whereby the probe supporting body; Or 3) when steps d is made the probe supporting body, form the groove of probe supporting body with the photoresistance definition, and after the supporting body material being inserted in the groove of photoresistance, again photoresistance is removed and make whereby the probe supporting body; Or 4) when steps d is made the probe supporting body, make a supporting body layer earlier, remove the unwanted part of supporting body layer again and make the probe supporting body whereby; Or 5) when steps d is made the probe supporting body, make a supporting body layer earlier, and after treating the probe circuit film and substrate separating, remove the unwanted part of supporting body layer again and make the probe supporting body whereby; Or 6) when steps d is made the probe supporting body, as the supporting body layer, will define probe supporting body dielectric layer in addition again and remove, and form the probe supporting body whereby with the dielectric layer of probe circuit film itself.
A kind of mems probe circuit film of the present invention, it is characterized in that, non-conductive dielectric layer and probe by the tool flexibility, electronic circuit, circuit linking point and probe supporting body constitute the multilayer film of integral structure jointly, and electronic circuit is embedding and be arranged in the dielectric layer inside of film, most of heeling-in that probe and circuit are connected point electrically connects with the electronic circuit formation in the dielectric layer inside of film, the end of probe and circuit linking point protrudes out the outside at film, and the probe supporting body is convexly set in the relative back side that film wherein simultaneously protrudes out probe tips, and constitutes the buffer gear of probe.
The two sides of this film all is provided with circuit and is connected point.
The electronic circuit of the dielectric layer inside of this film is that layout is multilayer circuit.
Be provided with between the multilayer circuit of the dielectric layer inside of this film and prevent the ground plane that disturbs.
The electronic circuit of the dielectric layer inside of this film is for being provided with the electronic circuit of resistance, electric capacity, inductance or other electronic package.
The probe of this film is for constituting the cantilevered elastic probe.
Probe tips is for constituting the wherein a kind of of inserted type syringe needle, embedded syringe needle or hybrid syringe needle.
The material of probe supporting body is selected the wherein a kind of of pottery, silicon, silicide, glass, quartz, rubber, plastics, epoxy resin, polymkeric substance or metal and alloy thereof for use.
The dielectric layer material of film is selected poly-ethanamide or silicon dioxide for use.
The circuit that is connected point and the printed circuit board (PCB) of a tool test function with the circuit of mems probe circuit film constitutes and electrically connects, and with mems probe circuit film and this printed circuit board (PCB) jointly composition be erected at a kind of micro-electromechanical film detecting head on the proving installation.
This mems probe circuit film of the present invention can be formed a kind of micro-electromechanical film detecting head in conjunction with the printed circuit board (PCB) of test-purpose is common, and the range of application of this detecting head comprises and can be applicable to cover crystal circuit tester substrate, the naked brilliant test of wafer, liquid crystal panel test, and memory test etc.
Description of drawings
Fig. 1 is a kind of structural representation of known films test card;
Fig. 2 A is a kind of mems probe circuit film structural representation of the present invention;
Fig. 2 B is a kind of mems probe circuit film structural representation of the present invention;
Fig. 2 C is a kind of mems probe circuit film structural representation of the present invention;
Fig. 2 D is a kind of mems probe circuit film structural representation of the present invention;
Fig. 2 E is a kind of mems probe circuit film structural representation of the present invention;
Fig. 2 F is a kind of mems probe circuit film structural representation of the present invention;
Fig. 3 can be applicable to cover brilliant tester substrate schematic representation of apparatus for a kind of mems probe circuit film of the present invention;
The manufacture method process flow diagram of Fig. 4 A a kind of mems probe circuit film of the present invention;
Fig. 4 B is the manufacture method process flow diagram of a kind of mems probe circuit film of the present invention;
Fig. 5 A be the mems probe circuit film in manufacturing process with keep its can be not crooked, expand or synoptic diagram that the processing procedure substrate of distortion is separated from each other;
Fig. 5 B be the mems probe circuit film in manufacturing process with keep its can be not crooked, expand or synoptic diagram that the processing procedure substrate of distortion is separated from each other;
Fig. 6 makes the key diagram of the probe supporting body of mems probe circuit film for the present invention;
Fig. 7 makes the key diagram of the probe supporting body of mems probe circuit film for the present invention;
Fig. 8 makes the key diagram of the probe supporting body of mems probe circuit film for the present invention;
Fig. 9 makes the key diagram of the probe supporting body of mems probe circuit film for the present invention;
Figure 10 makes the key diagram of the probe supporting body of mems probe circuit film for the present invention;
Figure 11 can be applicable to the synoptic diagram of naked brilliant proving installation for mems probe circuit film of the present invention.
17, chip 18, circuit junction pad 20, films test card
21, probe 23, circuit 25, following circuit junction
26, printed circuit board (PCB) 27, last circuit junction 28, P.e.c. soft board
30, processing procedure substrate 31, dielectric layer
21a, inserted type syringe needle 21b, embedded syringe needle 21c, hybrid syringe needle
33, electronic circuit 34, circuit are connected point 35, probe supporting body
36, photoresistance 37, supporting body layer 37a, etching resistance cover
39, separable interface 39a, separable interface layer 41, poly-ethanamide
43, web plate 44, steel knife 46, etching mouth
50, signal analytical equipment 55, electric capacity 56, resistance
62, board holder 63, cover brilliant substrate 71, ground plane
90, probe circuit film 100, mems probe circuit film
110, micro-electromechanical film detecting head 115, following proving installation
Embodiment
Shown in Fig. 2 A to Fig. 2 F, mems probe circuit film shown in the present 100 is used the manufacture of semiconductor technology with tool deflection characteristic and nonconducting dielectric material 31 or claim dielectric layer 31 laminations to constitute a kind of flexual multilayer film, and in processing procedure probe 21, electronic circuit 33, circuit is connected point 34 and probe supporting body 35 is integrated the multi-layer film structure of making integral structure with dielectric layer 31.
This mems probe circuit film 100 is used manufacture of semiconductor to make because be, so can make the multi-layer film structure of various functions inequality or purposes according to demand and use, but the basic structural characteristics of every kind of mems probe circuit film 100 is identical without exception, possesses probe 21, electronic circuit 33, circuit is connected point 34, probe supporting body 35 and dielectric layer 31 common integration are made integral structure, and electronic circuit 33 is embedding and is arranged in the inside of dielectric layer 31, probe 21 and circuit are connected point 34 most of heeling-ins in dielectric layer 31 inside, and constitute with the electronic circuit 33 of dielectric layer 31 inside and to electrically connect, the leading section of probe 21 and circuit linking point 34 then protrudes out single face or the two sides at mems probe circuit film 100, especially, probe supporting body 35 this face of being integrally formed in relative mems probe circuit film 100 convexes with the back side of probe 21.
The purpose that this mems probe circuit film 100 is provided with probe supporting body 35 has two: main function is stationary probe 21 and keeps the opposite planar degree of probe 21; Its less important function is higher than other surface after being to provide elastic reaction, being convenient to assembling and making probe 21 assemblings, and constitutes the buffer gear of probe 21.
The electronic circuit 33 of mems probe circuit film 100 can use with copper, gold, aluminium, tungsten, silver and alloy thereof etc. and be material, also can be at other protective seam of circuit lead surface coverage such as nickel, chromium, titanium, platinum, beryllium and alloy thereof etc.; And, can various electronic circuits 33 be arranged in the inside of dielectric layer 31 according to demand, for example, shown in Fig. 2 C, the circuit design of electronic circuit 33 can add assemblies such as electric capacity 55 and resistance 56, to increase the circuit function of mems probe circuit film 100; Perhaps, shown in Fig. 2 A or Fig. 2 D, can become the electronic circuit 33 of multilayer layout according to the demand layout, and, shown in Fig. 2 A, between the electronic circuit 33 of multilayer layout, can make ground plane 71 and electrically interfere with each other with isolated.
The circuit linking point 34 of mems probe circuit film 100 can be made according to demand and run through or do not run through mems probe circuit film 100.And, the probe 21 of this mems probe circuit film 100 can be made vertical probe shown in Fig. 2 B with manufacture of semiconductor according to demand, or shown in Fig. 2 E, make the cantilevered elastic probe, and, shown in Fig. 2 F, the syringe needle of probe 21 can be made inserted type syringe needle 21a, embedded syringe needle 21b or hybrid syringe needle 21c.And the syringe needle of probe 21 part is connected a little 34 with circuit can distinctly be distributed in the coplanar of mems probe circuit film 100 or coplanar not.
The probe 21 of this mems probe circuit film 100 and circuit are connected the rearward end of point 34; heeling-in is inner and be subjected to the tight coating of dielectric layer 31 at dielectric layer 31; so; the dielectric layer 31 of mems probe circuit film 100 can firmly coat probe 21 and circuit is connected the robust structure of point 34 except constituting, and constitute can barrier probe 21 and circuit be connected point 34 and avoid impaired protection structure.
In addition, mems probe circuit film 100 of the present invention by the multilayer layout of electronic circuit 33, can make probe 21 be arranged to arranged.As shown in Figure 3, when mems probe circuit film 100 and printed circuit board (PCB) 26 were assembled into a kind of micro-electromechanical film detecting head 110, its purposes just can be applicable to meet the test of the various high-order chip package IC of arranged.
Shown in Fig. 4 A and Fig. 4 B, the present invention makes the method for mems probe circuit film 100, comprise storehouse dielectric layer and metallic circuit layer technology, various metal and the nonmetal growth technology of using manufacture of semiconductor and remove technology, photoresistance and little shadow technology, figure transfer technology, and technology such as various cmps and implanting ions, and made mems probe circuit film 100 has pliability and has various metal electron circuit 33 and comprise microstructures such as probe 21, circuit linking point 34 and probe supporting body 35, and its method may further comprise the steps:
A, provide a processing procedure substrate 30;
Mems probe circuit film 100 shown in the present is a kind of pliability goods, therefore necessary mat flatness and rigidity reach the processing procedure substrate 30 of good base material as mems probe circuit film 100 in various manufacture of semiconductor, with keep mems probe circuit film 100 (hereinafter to be referred as probe circuit film 90) in the manufacturing process can be not crooked, expand or distortion, and have the flatness of height; The optional base material that is flattened in order to pottery, silicon, quartz, glass and aluminium alloy etc. of the present invention is as processing procedure substrate 30.
B, the separable interface 39 that can separate processing procedure substrate 30 in successive process is made in the processing procedure substrate 30 of step a;
Though probe circuit film 90 must the substrate of mat processing procedure in processing procedure 30 keep not can be crooked, expand or distortion, and have the flatness of height, still must separate after finishing making with processing procedure substrate 30; Therefore, between the layer of processing procedure substrate 30 and probe circuit film 90 and layer, must impose the processing of various separable interface in advance, make and to reach the purpose that probe circuit film 90 is separated with processing procedure substrate 30 by the separation of this separable interface in the successive process.
The manufacturing process of separable interface 39 has two kinds of modes, and first kind of mode utilized the then degree that engages interface between key-course and the layer so that layer with the conjugation grade between the layer not good and formation separable interface; Shown in Fig. 4 B, on processing procedure substrate 30, be coated with two strata ethanamides (PI) 41 continuously, when the coating first strata ethanamide 41, add suitably hot temperature curve and the time of baking curing of solid and control, do not add suitably hot temperature curve and the time of baking curing of solid and control when being coated with the second strata ethanamide 41, at this moment, the conjugation grade between the first strata ethanamide 41 and the second strata ethanamide 41 is not good, can form a separable interface 39 whereby;
The second way is to add the material that easily removes between processing procedure substrate 30 and probe circuit film 90, and utilizes the separable interface 39 that easily removes between material formation processing procedure substrate 30 and the probe circuit film 90.
C, utilize the processing procedure substrate 30 of completing steps b to carry out probe circuit film 90 to make, make to be provided with the probe circuit film 90 that prefabricated various electronic circuit 33, probe 21 and circuit are connected microstructure such as point 34 above the separable interface 39;
Shown in Fig. 4 B, use the storehouse dielectric layer and the metallic circuit layer technology of manufacture of semiconductor, various metals and nonmetal growth technology and remove technology, photoresistance and little shadow technology, and the figure transfer technology etc., be to form various groove on the interface 39 of processing procedure substrate 30 with dielectric layer 31, and in groove, insert after the metal material, use photoresistance above metal material, to form various figure with little shadow technology, with etching or electroplating process metal material is done microstructure processing again, make probe circuit film 90 have various metal electron circuit 33, and comprise probe 21, circuit is connected microstructures such as point 34
D, the probe circuit film 90 of the completing steps c probe supporting body 35 that continues is made, made probe circuit film 90 have the probe supporting body 35 of height of projection, and mat probe supporting body 35 is strengthened stationary probe 21 and kept the opposite planar degree of probe 21;
Shown in Fig. 5 A, as if the not good formation separable interface of utilizing between processing procedure substrate 30 and the probe circuit film 90 between layer and the layer 39 of conjugation grade, then mat external force is with steel knife 44 oblique angles incision and traversing, with regard to separable probe circuit film 90 and processing procedure substrate 30.
Shown in Fig. 5 B, if between processing procedure substrate 30 and the probe circuit film 90 be utilize add easily remove material constitute layer with layer separable interface layer 39a, utilize to make then that many etching mouths 46 sensible separable interface layer 39a surfaces are infiltrated with etching solution again and and carry out lateral etch, up to probe circuit film 90 with till processing procedure substrate 30 separates.
F, the probe circuit film 90 that step e is taken off carry out follow-up microstructure processing and make a kind of mems probe circuit film 100.
After treating probe circuit film 90 and processing procedure substrate 30 separating, the still uncompleted microstructure of pin probe circuit film 90 is processed again, comprise through removing unnecessary material, microstructure being exposed or the microstructure etc. of re-refining, make probe circuit film 90 be processed into flexual mems probe circuit film 100 goods of a kind of tool at last
When carrying out steps d to probe circuit film 90 making probe supporting bodies 35, material can be selected pottery, silicon, silicide, glass, quartz, rubber, plastics, chemical composition thing such as epoxy resin, polymkeric substance and various metal and alloy thereof etc. for use, more comprises the complex of storehouse; And method for making has following variety of way:
1. carrying out before step e destroys separable interface 39, or during pending step f, sticking together at probe circuit film 90 with prefabricated probe supporting body 35;
As shown in Figure 6, the probe supporting bodies 35 such as silicon chip, potsherd, rubber blanket, glass sheet or sheet metal that use cutting to finish, at probe circuit film 90 with before processing procedure substrate 30 separates, or during pending step f, the various surface mount technologies of mat stick together probe supporting body 35 on probe circuit film 90 surfaces.
And adhesive agent can make flexible solid of apparatus or material, probe supporting body 35 is sticked together on probe circuit film 90 surfaces again, makes probe 21 have little bullet shape.
2. before separable interface is separated, form groove with photoresistance, and in groove, insert the supporting body material;
As shown in Figure 7, before separable interface 39 is separated, utilize little shadow technology to form the zone of grooves and definition probe supporting body 35 with photoresistance 36, and in groove, insert probe supporting body material, for example nickel, cobalt, copper, gold etc. afterwards, remove photoresistance 36 and stay probe supporting body 35.
3. before carrying out step e destruction separable interface 39, probe supporting body material is inserted in the groove of web plate with the web plate technology;
As shown in Figure 7, before separable interface 39 is separated, be attached to probe circuit film 90 surfaces with web plate 43, afterwards, insert probe supporting body material in the hole of web plate 43, for example rubber or epoxy resin or the like remove web plate 43 and stay probe supporting body 35.
4. before carrying out step e destruction separable interface 39, a prefabricated supporting body layer 37 removes unwanted part again and makes probe supporting body 35 earlier;
As shown in Figure 8, before separable interface 39 is separated, to comprise a various elastic materials or metal material prefabricated supporting body layer 37 earlier, afterwards, utilize the zone of little shadow technology with photoresistance 36 definition probe supporting bodies 35, wait to remove after unwanted part and the formation probe supporting body 35, photoresistance 36 is removed stay probe supporting body 35 again.
5. in processing procedure, make a probe supporting body 37 in advance, remove unwanted part during pending step f again and make probe supporting body 35
As shown in Figure 9, tie up in the processing procedure of probe circuit film 90 a prefabricated supporting body layer 37 earlier, and reserve the zone of etching resistance cover 37a with definition probe supporting body 35, when treating probe circuit film 90 and processing procedure substrate 30 after separatings and carrying out step f, utilize etching resistance cover 37a that supporting body layer 37 unwanted part are removed and make probe supporting body 35.
With the dielectric layer 31 of probe circuit film 90 itself as the supporting body layer, carrying out before step e destroys separable interface 39, or during pending step f, removing unwanted part again, make probe circuit film 90 have probe supporting body 35
As shown in figure 10, system with the dielectric layer 31 of probe circuit film 90 itself as the supporting body layer, make earlier after the zone of etching resistance cover 37a with definition probe supporting body 35, before carrying out step e destruction separable interface 39, utilizing etching resistance cover 37a will define probe supporting body 35 dielectric layer 031 in addition removes, make the dielectric layer 31 in definition probe supporting body 35 zones be higher than extra-regional dielectric layer 31, and form probe supporting body 35 by this.And etching resistance cover 37a can remove or not remove.
Perhaps, in the processing procedure of probe circuit film 90, reserve the zone of etching resistance cover 37a at dielectric layer 31 earlier with definition probe supporting body 35, when treating probe circuit film 90 and processing procedure substrate 30 after separatings and carrying out step f, utilize etching resistance cover 37a will define probe supporting body 35 dielectric layer 31 in addition again and remove, and form probe supporting body 35 whereby.
By the made mems probe circuit film 100 of above method for making, have the following advantages:
1. can will comprise the various electronic circuits 33 of resistance, electric capacity, inductance or other electronic package and comprise probe 21 and circuit is connected the be integrated into one pliability mems probe circuit film 100 of formula structure of point 34 electric component of microcomputer.
2. mems probe circuit film 100 mat in processing procedure is smooth processing procedure substrate 30 keeps not can be crooked, expand or distortion, so mems probe circuit film 100 has flatness highly.
4. probe 21 structures systems is by mems probe circuit film 100 inner outward extending integrative-structures, and probe 21 body major parts are subjected to the coating and the protection of dielectric material or dielectric layer 31, also can avoid sustaining damage so probe 21 firmly is difficult for producing crooked phenomenons.
5. electronic circuit 33 is the inside that is arranged in mems probe circuit film 100, and allows that electronic circuit 33 is established and be the multilayer circuit layout, so the spacing of probe 21 can accomplish especially can arrange to be arranged less than being high-density arrangement below the 20um.
6. between multilayer circuit, can make ground plane and avoid interference, so can design the more electronic circuit 33 of high frequency.
7. mems probe circuit film 100 has probe supporting body 35 structures, and probe supporting body 35 can be selected for use elastic material to make or constitute resilient infrastructure, when probe 21 is under pressure, can reach probe supporting body 35 and bear excessive pressure stressed, so the special excellent durability of probe 21 tools by probe supporting body 35.
In application facet, as shown in Figure 3, utilize the electronic circuit 33 of mems probe circuit film 100 of the present invention directly to link to each other with the circuit 23 of printed circuit board (PCB) 26, can facilitate mems probe circuit film 100 and printed circuit board (PCB) 26 to form a kind of micro-electromechanical film detecting head 110, and can be assembled on the various frameworks detecting head as various test-purpose.
Especially, mems probe circuit film 100 of the present invention is except the tool pliability, the probe supporting body 35 of mems probe circuit film 100 also is set as the flexible buffer gear of tool, so, when micro-electromechanical film detecting head 110 when testing, except can bearing the pressure that probe 21 transmitted, and can bring into play a little high low head of finely tuning probe 21, therefore, even if under the not good situation of the flatness of determinand, this micro-electromechanical film detecting head 110 shown in the present still can normal operation.
The range of application of this micro-electromechanical film detecting head 110 is quite extensive, comprises being applied to the naked brilliant test of cover crystal circuit tester substrate, wafer, liquid crystal panel test, and memory test etc.
For example, Fig. 3 is applied in the embodiment that covers brilliant tester substrate for micro-electromechanical film detecting head 110 shown in the present, and this test macro comprises one group of micro-electromechanical film detecting head 110 and one group of following proving installation 115 that constitutes with mems probe circuit film 100.When testing, cover crystal circuit substrate 63 is inserted in the board holder 62, and the probe 21 of proving installation 115 is contacted with following circuit junction 25 formations of cover crystal circuit substrate 63, afterwards, the probe 21 of micro-electromechanical film detecting head 110 is contacted with last circuit junction 27 formations of cover crystal circuit substrate 63, make the circuit of whole test system become the loop from cover crystal circuit substrate 63 to signal analytical equipment (Tester) 50.
When the total system circuit became the loop, power supply and signal can be spread out of by signal analytical equipment 50, and reached cover crystal circuit substrate 63 via the probe 21 of test macro, and whether the circuit that can test cover crystal circuit substrate 63 in this way is good.
Figure 11 is applied in the embodiment of the naked brilliant test of wafer for micro-electromechanical film detecting head 110 shown in the present.When testing, the probe 21 of micro-electromechanical film detecting head 110 constituted with the circuit junction pad 18 of chip 17 contact, make the circuit of total system become the loop from chip 17 to signal analytical equipment 50.
When the total system circuit became the loop, power supply and signal can be spread out of by signal analytical equipment 50, and through micro-electromechanical film detecting head 110 probe 21 reach chip to be measured 17.Signal is transmitted back to signal analytical equipment 50 via micro-electromechanical film detecting head 110 after handling via the integrated circuit of chip 17 again.Utilize signal analytical equipment 50 when reading the signal of passback, can differentiate and be non-defective unit or defective products.
Though above excellent the stating of the present invention selects embodiment to illustrate in detail, its intension is not limited to the above embodiments.All various mems probe circuit films or micro-electromechanical film measuring head and application thereof that utilizes technical characterictic of the present invention institute integration and making do not break away within the scope of protection of the invention.
Claims (20)
1, a kind of method for making of mems probe circuit film is made to use manufacture of semiconductor, it is characterized in that, comprises the following steps:
A, provide a processing procedure substrate;
B, to the processing procedure substrate fabrication of step a can execution in step e separable interface;
C, utilize the processing procedure substrate of completing steps b to carry out the probe circuit film to make, making has prefabricated various electronic circuit, probe structure and circuit to be connected the probe circuit pellicular cascade of point on separable interface;
D, the probe circuit film of completing steps c continued make the probe supporting body, and probe tips stretches out from the wherein one side of film, and the probe supporting body is convexly set in the relative back side of this face, makes the probe circuit film have the probe supporting body of height of projection;
Separable interface between e, destruction processing procedure substrate and the probe circuit film makes probe circuit film and processing procedure substrate be separated from each other and take off;
F, the probe circuit film that step e is taken off carry out follow-up microstructure processing and make a kind of mems probe circuit film.
2, the method for making of a kind of mems probe circuit film according to claim 1, it is characterized in that, probe and the circuit of making the probe circuit film at step c are connected in the processing procedure of point, form the various groove that constitutes probe and circuit linking dot structure with dielectric layer, and in groove, insert metal material; When pending step f carries out the processing of follow-up microstructure to the probe circuit film that takes off, will coat probe or circuit again and be connected the dielectric layer etch of putting, to make the micro-electromechanical film detecting head.
3, the method for making of a kind of mems probe circuit film according to claim 1, it is characterized in that, make in the processing procedure of microstructure of probe circuit film at step c, form various groove with dielectric layer, and in groove, insert after the metal material, use photoresistance above metal material, to form various figure with little shadow technology, with etching or electroplating process metal material is done microstructure processing again; When pending step f carries out the processing of follow-up microstructure to the probe circuit film that takes off, will coat the dielectric layer etch of microstructure again, to make the micro-electromechanical film detecting head.
4, according to the method for making of claim 2 or 3 described a kind of mems probe circuit films; it is characterized in that; at step f the probe circuit film that takes off is carried out in the process of etching dielectric layer, the dielectric layer around probe or the microstructure is set as protection structure higher and formation probe or microstructure.
5, the method for making of a kind of mems probe circuit film according to claim 1 is characterized in that, when steps d is carried out probe circuit film making probe supporting body, with surface mount technology the probe supporting body is sticked together on the probe circuit film.
6, the method for making of a kind of mems probe circuit film according to claim 1, it is characterized in that, when steps d is made the probe supporting body, form the groove of probe supporting body with the definition of web plate technology, and after probe supporting body material being inserted in the groove of web plate, again web plate is removed and makes whereby the probe supporting body.
7, the method for making of a kind of mems probe circuit film according to claim 1, it is characterized in that, when steps d is made the probe supporting body, form the groove of probe supporting body with the photoresistance definition, and after the supporting body material being inserted in the groove of photoresistance, again photoresistance is removed and makes whereby the probe supporting body.
8, the method for making of a kind of mems probe circuit film according to claim 1 is characterized in that, when steps d is made the probe supporting body, makes a supporting body layer earlier, removes the unwanted part of supporting body layer again and makes the probe supporting body whereby.
9, the method for making of a kind of mems probe circuit film according to claim 1, it is characterized in that, when steps d is made the probe supporting body, make a supporting body layer earlier, and after treating the probe circuit film and substrate separating, remove the unwanted part of supporting body layer again and make the probe supporting body whereby.
10, the method for making of a kind of mems probe circuit film according to claim 1, it is characterized in that, when steps d is made the probe supporting body, with the dielectric layer of probe circuit film itself as the supporting body layer, to define probe supporting body dielectric layer in addition again and remove, and form the probe supporting body whereby.
11, a kind of mems probe circuit film, it is characterized in that, be connected a little with probe, electronic circuit, circuit and the probe supporting body constitutes the multilayer film of integral structure jointly by the non-conductive dielectric layer of tool flexibility, and electronic circuit is embedding and be arranged in the dielectric layer inside of film, most of heeling-in that probe and circuit are connected point electrically connects with the electronic circuit formation in the dielectric layer inside of film, probe and circuit are connected the end of point and stretch out from the wherein one side of film, and the probe supporting body is convexly set in the relative back side of this face, and constitutes the buffer gear of probe.
12, a kind of mems probe circuit film according to claim 11 is characterized in that, the two sides of this film all is provided with circuit and is connected point.
13, according to claim 11 or 12 described a kind of mems probe circuit films, it is characterized in that the electronic circuit of the dielectric layer inside of this film is that layout is multilayer circuit.
14, a kind of mems probe circuit film according to claim 13 is characterized in that, is provided with between the multilayer circuit of the dielectric layer inside of this film to prevent the ground plane that disturbs.
15, a kind of mems probe circuit film according to claim 13 is characterized in that, the electronic circuit of the dielectric layer inside of this film is for being provided with the electronic circuit of resistance, electric capacity or inductance.
16, a kind of mems probe circuit film according to claim 13 is characterized in that, the probe of this film is for constituting the cantilevered elastic probe.
According to claim 11,12 or 14 described a kind of mems probe circuit films, it is characterized in that 17, probe tips is for constituting the wherein a kind of of inserted type syringe needle, embedded syringe needle or hybrid syringe needle.
18, according to claim 11,12 or 14 described a kind of mems probe circuit films, it is characterized in that the material of probe supporting body is selected the wherein a kind of of pottery, silicon, silicide, glass, quartz, rubber, plastics, epoxy resin, polymkeric substance or metal and alloy thereof for use.
According to claim 11,12 or 14 described a kind of mems probe circuit films, it is characterized in that 19, the dielectric layer material of film is selected poly-ethanamide or silicon dioxide for use.
20, according to claim 11,12 or 14 described a kind of mems probe circuit films, it is characterized in that, the circuit that is connected point and the printed circuit board (PCB) of a tool test function with the circuit of mems probe circuit film constitutes and electrically connects, and with mems probe circuit film and this printed circuit board (PCB) jointly composition be erected at a kind of micro-electromechanical film detecting head on the proving installation.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100076764A CN100348983C (en) | 2005-02-07 | 2005-02-07 | Circuit film for micro electromechanical probe and fabricating method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100076764A CN100348983C (en) | 2005-02-07 | 2005-02-07 | Circuit film for micro electromechanical probe and fabricating method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1632596A CN1632596A (en) | 2005-06-29 |
| CN100348983C true CN100348983C (en) | 2007-11-14 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2005100076764A Expired - Fee Related CN100348983C (en) | 2005-02-07 | 2005-02-07 | Circuit film for micro electromechanical probe and fabricating method thereof |
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| Country | Link |
|---|---|
| CN (1) | CN100348983C (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI617811B (en) * | 2016-04-22 | 2018-03-11 | 新特系統股份有限公司 | Probe card |
| TWI728531B (en) * | 2019-10-30 | 2021-05-21 | 巨擘科技股份有限公司 | Probe card device |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4912399A (en) * | 1987-06-09 | 1990-03-27 | Tektronix, Inc. | Multiple lead probe for integrated circuits in wafer form |
| US5982183A (en) * | 1993-07-19 | 1999-11-09 | Tokyo Electron Limited | Probing method and device with contact film wiper feature |
| CN1252129A (en) * | 1997-04-10 | 2000-05-03 | 梅塞特罗尼克公司 | Method for making cards with multiple contact tips for testing semiconductor chips |
| US6305230B1 (en) * | 1997-05-09 | 2001-10-23 | Hitachi, Ltd. | Connector and probing system |
| CN1397805A (en) * | 2001-07-18 | 2003-02-19 | 株式会社鼎新 | Contact member and its mfg. method |
| CN1514938A (en) * | 2001-05-28 | 2004-07-21 | 爱德万测试株式会社 | Method for mfg. of probe pin, and method for mfg. of probe card |
-
2005
- 2005-02-07 CN CNB2005100076764A patent/CN100348983C/en not_active Expired - Fee Related
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4912399A (en) * | 1987-06-09 | 1990-03-27 | Tektronix, Inc. | Multiple lead probe for integrated circuits in wafer form |
| US5982183A (en) * | 1993-07-19 | 1999-11-09 | Tokyo Electron Limited | Probing method and device with contact film wiper feature |
| CN1252129A (en) * | 1997-04-10 | 2000-05-03 | 梅塞特罗尼克公司 | Method for making cards with multiple contact tips for testing semiconductor chips |
| US6305230B1 (en) * | 1997-05-09 | 2001-10-23 | Hitachi, Ltd. | Connector and probing system |
| CN1514938A (en) * | 2001-05-28 | 2004-07-21 | 爱德万测试株式会社 | Method for mfg. of probe pin, and method for mfg. of probe card |
| CN1397805A (en) * | 2001-07-18 | 2003-02-19 | 株式会社鼎新 | Contact member and its mfg. method |
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| Publication number | Publication date |
|---|---|
| CN1632596A (en) | 2005-06-29 |
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