CN100348953C - Heat measuring type micro flow sensor - Google Patents
Heat measuring type micro flow sensor Download PDFInfo
- Publication number
- CN100348953C CN100348953C CNB2005100621135A CN200510062113A CN100348953C CN 100348953 C CN100348953 C CN 100348953C CN B2005100621135 A CNB2005100621135 A CN B2005100621135A CN 200510062113 A CN200510062113 A CN 200510062113A CN 100348953 C CN100348953 C CN 100348953C
- Authority
- CN
- China
- Prior art keywords
- thermoelectric pile
- heating element
- membrane
- silicon dioxide
- measuring type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Abstract
The present invention discloses a heat measuring type micro flow sensor. A silicon dioxide diathermic membrane, a single crystal silicon membrane which is composed of a heating element and a thermoelectric pile semiconductor electrode, a silicon dioxide isolating layer, a thermoelectric pile metal electrode, a metal connecting line, a metal weld spot and a silicon nitride membrane are orderly arranged on a monocrystal silicon substrate from bottom to top, or the middle part of the monocrystal silicon substrate is filled with silicon dioxide fillers, or the thermoelectric pile semiconductor electrode and the heating element are arranged on the monocrystal silicon substrate of which the middle part is filled with the silicon dioxide fillers. The thermoelectric pile semiconductor electrode is orderly provided with the silicon dioxide insulating layer, the thermoelectric pile metal electrode, the metal connecting line, the metal weld spot and the silicon nitride membrane from bottom to top. The sensor is positioned in a flow passage. After the heating element is supplied with electricity, the heating element can produce heat. Thermopiles positioned at both sides respectively output a voltage signal generated by the difference of temperature distribution within a range of a flow field which is measured by each thermopile. The two voltage signals carries out the subtraction operation, and a result is used as a voltage signal which is finally outputted. Therefore, the measuring type flow measurement is realized.
Description
Technical field
The present invention relates to fluid metering equipment, particularly relate to a kind of heat measuring type micro flow sensor.
Background technology
Along with development of science and technology, the microminiaturization of sensor has brought the response time fast, and low power consumption and the possibility that low discharge is accurately measured can satisfy at chemical industry, medical treatment, environment measuring, the accurate demand of measuring low discharge in the fields such as gas metering.Wherein, thermal flow rate sensor has simple physical construction and circuit structure, is the research focus of present micro flow sensor.
Thermal flow rate sensor commonly used mainly is divided into wind gage and two kinds of mode of operations of calorimetric formula.Compare with wind gage, the sensor of calorimetric formula pattern work has the response characteristic good to minimum velocity, and can judge the flow direction, relatively is suitable for the precision measurement of gas low discharge.People such as de Bree
[1]Adopt complicated back-end circuit, realize calorimetric formula and wind gage mode of operation simultaneously on sensor, as the mode of operation under the low speed, wind gage wherein is limited to 1000cm in the measurement of calorimetric formula active section as the mode of operation under the high speed with the calorimetric formula
3/ min, pipeline section amasss 100mm
2People such as Rodrigues
[2]Adopt micro-bridge structure to make calorimetric formula sensor, the testing conduit diameter is 3mm, is limited to 500cm in the measurement
3/ min.People such as Sabat é
[3]By many groups temperature element, will measure the upper limit and increase to 8000cm
3/ min, pipeline section is long-pending to be 7mm
2
It is supporting construction that present miniature calorimetric formula flow sensor generally adopts the hanging structure made from materials such as silicon nitrides.Because hanging structure is in the heat-insulating property that improves between sensing element and the substrate, the intensity and the shock proof ability of resistance to compression of sensor have been reduced, such sensor is suitable to be operated in the microchannel of diameter for millimeter level and submillimeter level, and range of application remains expansion.
Summary of the invention
In order to overcome existing heat measuring type micro flow sensor deficiency structurally, the object of the present invention is to provide a kind of heat measuring type micro flow sensor of new structure, with the gas flow measurement of sensor application expanded range in the industrial pipeline.
The technical solution adopted for the present invention to solve the technical problems is as follows:
Scheme 1: on monocrystalline substrate, be provided with the silicon dioxide adiabatic membrane from bottom to top successively, by heating element and three monocrystalline silicon membrane, silicon dioxide separation layers that above thermoelectric pile semi-conducting electrode constitutes, thermoelectric pile metal electrode, metal connecting line and solder joint, silicon nitride film.
Scheme 2: can on the basis of scheme 1, in the middle of described monocrystalline substrate, also be filled with silica gel filler with heat insulating function.
The thermoelectric pile metal electrode of described thermoelectric pile semi-conducting electrode and its top is formed thermoelectric pile jointly.
Described heating element is the resistor that forms in the monocrystalline silicon membrane; Heating element is connected with external circuit with solder joint by the metal connecting line that is arranged on the monocrystalline silicon membrane with thermoelectric pile.
Scheme 3: in the centre is filled with the monocrystalline substrate upper surface of the silica gel filler with heat insulating function, be provided with heating element and three above thermoelectric pile semi-conducting electrodes, the thermoelectric pile semi-conducting electrode is provided with the silicon dioxide separation layer from bottom to top successively, thermoelectric pile metal electrode, metal connecting line and solder joint, silicon nitride film.
The thermoelectric pile metal electrode of described thermoelectric pile semi-conducting electrode and its top is formed thermoelectric pile jointly.
Described thermoelectric pile is connected with external circuit with solder joint by the metal connecting line that is arranged on the monocrystalline silicon membrane.The beneficial effect that the present invention has is:
1, adopt the silicon dioxide adiabatic membrane or (with) by the monocrystalline substrate heat insulating construction that silica gel filler is filled, reach the substrate insulation effect;
2, adopt making heating element and thermoelectric pile in monocrystalline silicon membrane, reach the effect that increases the horizontal thermal resistance of sensor surface;
3, adopt solid supporting construction to replace hanging structure, strengthened the physical strength of sensor, thereby enlarged the usable range of sensor;
4, this body structure surface is the plane, without any pit or projection, therefore can guarantee at utmost that the flow field of sensor surface is interference-free;
5, adopt the method for surface deposition silicon nitride, the anti-corrosion anti-abrasion that strengthens sensor decreases ability;
6, the heating element of Cai Yonging is positioned at sensor central authorities, is powered by external direct current power supply during work, and the heating element both end voltage can be selected between 5-20V as required.In the frequency requirement on reaching application, can use the pulsed direct current supply of certain frequency according to demand, to reach purpose of energy saving.
In a word, the present invention adopts silicon dioxide adiabatic membrane/monocrystalline substrate composite adiabatic structure to realize strengthening the purpose of the physical strength of such sensor, expand its range of application to the technical grade pipeline from millimeter or submillimeter level pipeline, make it can be widely used in industrial occasions.Because this sensor is a microsensor, therefore, cut down the consumption of energy improving sensitivity and response speed, aspects such as saving cost such sensor of tradition have great advantage, and such characteristics have also increased its usable range.And, make it can measure flow more accurately because the smooth structure of its small volume and sensor surface has reduced the interference of sensor stream field to greatest extent when measuring flow.
Description of drawings
Fig. 1 is a structural principle vertical view of the present invention;
Fig. 2 is the A1-A1 sectional view of first embodiment Fig. 1;
Fig. 3 is the A2-A2 sectional view of first embodiment Fig. 1;
Fig. 4 is the B-B sectional view of first embodiment Fig. 1;
Fig. 5 is the A1-A1 sectional view of second embodiment Fig. 1;
Fig. 6 is the A2-A2 sectional view of second embodiment Fig. 1;
Fig. 7 is the B-B sectional view of second embodiment Fig. 1;
Fig. 8 is the A1-A1 sectional view of the 3rd embodiment Fig. 1;
Fig. 9 is the A2-A2 sectional view of the 3rd embodiment Fig. 1;
Figure 10 is the B-B sectional view of the 3rd embodiment Fig. 1.
Among the figure: 1, solder joint, 2, metal connecting line, 3, thermoelectric pile, wherein 3.1 is the thermoelectric pile metal electrode, 3.2 be the thermoelectric pile semi-conducting electrode, 4, heating element, 5, the silicon dioxide separation layer, 6, silicon nitride film, 7, monocrystalline silicon membrane, 8, silicon dioxide adiabatic membrane, 9, monocrystalline substrate, 10, silica gel filler.
Embodiment
The present invention is further illustrated below in conjunction with drawings and Examples.
First embodiment of the present invention such as Fig. 1, Fig. 2, Fig. 3, shown in Figure 4, on monocrystalline substrate 9, be provided with silicon dioxide adiabatic membrane 8 from bottom to top successively, by heating element 4 and three monocrystalline silicon membrane 7, silicon dioxide separation layers 5 that above thermoelectric pile semi-conducting electrode 3.2 constitutes, thermoelectric pile metal electrode 3.1, metal connecting line 2 and solder joint 1, silicon nitride film 6.
Second embodiment of the present invention such as Fig. 1, Fig. 5, Fig. 6, shown in Figure 7 also are filled with the silica gel filler 10 with heat insulating function in the middle of the described monocrystalline substrate 9.
In first and second embodiment, the thermoelectric pile metal electrode 3.1 common thermoelectric piles 3 of forming of described thermoelectric pile semi-conducting electrode 3.2 and its top.
In first and second embodiment, described heating element 4 is the resistor that forms in the monocrystalline silicon membrane 7; Heating element 4 is connected with external circuit with solder joint 1 by the metal connecting line 2 that is arranged on the monocrystalline silicon membrane 7 with thermoelectric pile 3.
The 3rd embodiment of the present invention such as Fig. 1, Fig. 8, Fig. 9, shown in Figure 10, in the centre is filled with monocrystalline substrate 9 upper surfaces of the silica gel filler 10 with heat insulating function, be provided with heating element 4 and three above thermoelectric pile semi-conducting electrodes 3.2, thermoelectric pile semi-conducting electrode 3.2 is provided with silicon dioxide separation layer 5 from bottom to top successively, thermoelectric pile metal electrode 3.1, metal connecting line 2 and solder joint 1, silicon nitride film 6.
In the 3rd embodiment, the thermoelectric pile metal electrode 3.1 common thermoelectric piles 3 of forming of described thermoelectric pile semi-conducting electrode 3.2 and its top.
In the 3rd embodiment, described thermoelectric pile 3 is connected with external circuit with solder joint 1 by the metal connecting line 2 that is arranged on the monocrystalline silicon membrane 7.
Principle of work of the present invention is as follows:
A kind of heat measuring type micro flow sensor provided by the invention forms heating element 4 and thermoelectric pile semi-conducting electrode 3.2 in monocrystalline silicon membrane 7, form the metal connecting line 2 and the solder joint 1 of thermoelectric pile metal electrode 3.1 and sensor element in the metal film on monocrystalline silicon membrane 7.As shown in Figure 1, after the sensor installation, thermoelectric pile 3 symmetric offset spread are in heating element 4 both sides, and three's downbeam successively is arranged among the runner.During work, heating element 4 power supply backs produce heat.The thermoelectric pile 3 that is positioned at both sides is exported the voltage signal that is produced by the Temperature Distribution difference of measured separately flow field scope respectively.Again these two voltage signals are subtracted each other the voltage signal of back, realize calorimetric formula flow measurement principle thus as final output.
Sensor provided by the invention is when work, and the heat part that heating element 4 produces is taken away by substrate, and another part is by fluid removal.When well heater heats, how to reduce the heat share of being taken away by substrate and how to guarantee sensor surface form with flow field Temperature Distribution consistent temperature field on every side be the structural design emphasis of such sensor, also be the key of structural design of the present invention.For embodiment 1, substrate reaches insulation effect with silicon dioxide adiabatic membrane 8.Simultaneously, monocrystalline silicon membrane 7 or polysilicon film that the thickness that it contains is lower than 2 μ m have enough insulating characteristicses, thereby the heat that has guaranteed the heating element generation is more by fluid removal, and the temperature field distribution relevant with flow set up near the flow field that is enough to thus sensor surface.For thermal insulation requires higher occasion to substrate, the sensor of embodiment 2 design has that thickness is lower than the monocrystalline silicon membrane 7 of 2 μ m and solid adiabatic substrat structure that monocrystalline silicon membrane depended on (comprises silicon dioxide adiabatic membrane 8, monocrystalline substrate 9 and silica gel filler 10), this structure is in vertical thermal insulation and laterally aspect adiabatic two good performance is arranged all.Enough insulating characteristicses have guaranteed the heat of heating element generation more by fluid removal, and the temperature field distribution relevant with flow set up near the flow field that is enough to thus sensor surface.And wherein enough horizontal heat-insulating properties guarantee simultaneously that sensor surface forms with near flow field Temperature Distribution consistent temperature and distribute, thereby make the output of thermoelectric pile 3 truly reflect the Temperature Distribution in flow field.
For embodiment 3, substrate replaces the silicon dioxide adiabatic membrane 8 among the embodiment 1 to reach insulation effect with the monocrystalline substrate 9 that contains silica gel filler 10.In this structure, monocrystalline substrate 9 has formed membrane structure above silica gel filler 10, and this membrane structure belongs to monocrystalline substrate, but when working sensor, it play with embodiment 1 in the same insulation effect of monocrystalline silicon membrane.
Claims (7)
1, a kind of heat measuring type micro flow sensor, it is characterized in that: on monocrystalline substrate (9), the monocrystalline silicon membrane (7), the silicon dioxide separation layer (5) that are provided with silicon dioxide adiabatic membrane (8) from bottom to top successively, constitute by heating element (4) and three above thermoelectric pile semi-conducting electrodes (3.2), thermoelectric pile metal electrode (3.1), metal connecting line (2) and solder joint (1), silicon nitride film (6).
2, a kind of heat measuring type micro flow sensor according to claim 1 is characterized in that: also be filled with the silica gel filler (10) with heat insulating function in the middle of the described monocrystalline substrate (9).
3, a kind of heat measuring type micro flow sensor according to claim 1 and 2 is characterized in that: the thermoelectric pile metal electrode (3.1) of described thermoelectric pile semi-conducting electrode (3.2) and its top is formed thermoelectric pile (3) jointly.
4, a kind of heat measuring type micro flow sensor according to claim 1 and 2 is characterized in that: the resistor of described heating element (4) for forming in the monocrystalline silicon membrane (7); Heating element (4) is connected with external circuit with solder joint (1) by the metal connecting line (2) that is arranged on the monocrystalline silicon membrane (7) with thermoelectric pile (3).
5, a kind of heat measuring type micro flow sensor, it is characterized in that: in the centre is filled with monocrystalline substrate (9) upper surface of the silica gel filler (10) with heat insulating function, be provided with heating element (4) and three above thermoelectric pile semi-conducting electrodes (3.2), thermoelectric pile semi-conducting electrode (3.2) is provided with silicon dioxide separation layer (5) from bottom to top successively, thermoelectric pile metal electrode (3.1), metal connecting line (2) and solder joint (1), silicon nitride film (6).
6, a kind of heat measuring type micro flow sensor according to claim 5 is characterized in that: the thermoelectric pile metal electrode (3.1) of described thermoelectric pile semi-conducting electrode (3.2) and its top is formed thermoelectric pile (3) jointly.
7, a kind of heat measuring type micro flow sensor according to claim 6 is characterized in that: described thermoelectric pile (3) is connected with external circuit with solder joint (1) by the metal connecting line (2) that is arranged on the monocrystalline silicon membrane (7).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100621135A CN100348953C (en) | 2005-12-19 | 2005-12-19 | Heat measuring type micro flow sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100621135A CN100348953C (en) | 2005-12-19 | 2005-12-19 | Heat measuring type micro flow sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1786674A CN1786674A (en) | 2006-06-14 |
| CN100348953C true CN100348953C (en) | 2007-11-14 |
Family
ID=36784218
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2005100621135A Expired - Fee Related CN100348953C (en) | 2005-12-19 | 2005-12-19 | Heat measuring type micro flow sensor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100348953C (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105203250B (en) * | 2015-10-21 | 2017-10-10 | 美新半导体（无锡）有限公司 | A kind of hot type pressure sensor |
| CN109116050B (en) * | 2018-06-21 | 2020-01-31 | 东南大学 | microminiature high-sensitivity two-dimensional anemometer and manufacturing method thereof |
| CN109579928B (en) * | 2018-11-23 | 2020-10-23 | 北京控制工程研究所 | Thermal type micro-flow measuring sensor flow channel and sealing structure |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4705713A (en) * | 1985-02-16 | 1987-11-10 | Nippon Soken, Inc. | Film resistor for flow measuring apparatus |
| CN1058647A (en) * | 1990-08-01 | 1992-02-12 | 涂相征 | A kind of heat-flow sensor of integrated Si-membrane and manufacture method thereof |
| CN1174984A (en) * | 1996-08-23 | 1998-03-04 | 李韫言 | Thermal type flow sensor for very fine working |
| JPH11281446A (en) * | 1998-03-31 | 1999-10-15 | Mitsubishi Electric Corp | Flow rate detecting element and flow rate sensor |
| US6698283B2 (en) * | 2001-07-16 | 2004-03-02 | Denso Corporation | Thin film sensor, method of manufacturing thin film sensor, and flow sensor |
| JP2004205498A (en) * | 2002-12-13 | 2004-07-22 | Denso Corp | Flow sensor |
| CN1538934A (en) * | 2001-07-31 | 2004-10-20 | ����Ĭ������˹�����ҿ�ѧ�о����� | Method for fabrication of suspended porous silicon microstructures and application in gas sensors |
| CN1620402A (en) * | 2002-01-24 | 2005-05-25 | “德默克里托斯”国家科学研究中心 | Low power silicon thermal sersors and microfluidic devices based on the use of porus silicon sealed air cavity technology or microchannel technology |
| US6923053B2 (en) * | 2002-03-27 | 2005-08-02 | Hitachi, Ltd. | Gas flowmeter and manufacturing method thereof |
-
2005
- 2005-12-19 CN CNB2005100621135A patent/CN100348953C/en not_active Expired - Fee Related
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4705713A (en) * | 1985-02-16 | 1987-11-10 | Nippon Soken, Inc. | Film resistor for flow measuring apparatus |
| CN1058647A (en) * | 1990-08-01 | 1992-02-12 | 涂相征 | A kind of heat-flow sensor of integrated Si-membrane and manufacture method thereof |
| CN1174984A (en) * | 1996-08-23 | 1998-03-04 | 李韫言 | Thermal type flow sensor for very fine working |
| JPH11281446A (en) * | 1998-03-31 | 1999-10-15 | Mitsubishi Electric Corp | Flow rate detecting element and flow rate sensor |
| US6698283B2 (en) * | 2001-07-16 | 2004-03-02 | Denso Corporation | Thin film sensor, method of manufacturing thin film sensor, and flow sensor |
| CN1538934A (en) * | 2001-07-31 | 2004-10-20 | ����Ĭ������˹�����ҿ�ѧ�о����� | Method for fabrication of suspended porous silicon microstructures and application in gas sensors |
| CN1620402A (en) * | 2002-01-24 | 2005-05-25 | “德默克里托斯”国家科学研究中心 | Low power silicon thermal sersors and microfluidic devices based on the use of porus silicon sealed air cavity technology or microchannel technology |
| US6923053B2 (en) * | 2002-03-27 | 2005-08-02 | Hitachi, Ltd. | Gas flowmeter and manufacturing method thereof |
| JP2004205498A (en) * | 2002-12-13 | 2004-07-22 | Denso Corp | Flow sensor |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1786674A (en) | 2006-06-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101329291B (en) | Gas-sensitive sensor | |
| CN102749473B (en) | Two-dimensional hot-film wind speed and direction sensor and preparation method thereof | |
| CN100545583C (en) | A kind of differential pressure, pressure, temperature simultaneously measuring multi-parameter sensor | |
| CN105928567B (en) | Silicon substrate gas sensitization chip of integrated Temperature Humidity Sensor and preparation method thereof | |
| CN104685323B (en) | Fill level monitoring system and flow measuring device | |
| CN101625274B (en) | Acoustic surface wave pressure sensor and acoustic surface wave temperature sensor | |
| CN100348953C (en) | Heat measuring type micro flow sensor | |
| CN107543618A (en) | Circle foil radiant heat flux measurement apparatus based on fexible film thermoelectric pile | |
| CN106629574A (en) | MEMS infrared light source and manufacturing method thereof | |
| CN102589760A (en) | Minitype capacitance-type mechanical sensor and preparation method thereof | |
| CN202171511U (en) | Fuel cell internal transient heat-flow density distribution measurement inserting piece | |
| CN1885047B (en) | Piezoresistance type microwave power sensor and microwave power sensing method thereof | |
| CN202041547U (en) | High-sensibility two-dimensional wind speed and wind direction sensor | |
| CN201382829Y (en) | Sapphire pressure sensor | |
| CN205785343U (en) | The silica-based gas sensitization chip of integrated Temperature Humidity Sensor | |
| CN2854525Y (en) | Heat measuring type micro-flow sensor | |
| CN104977425A (en) | Wind measurement sensor chip structure and method of manufacturing same | |
| Xu et al. | A low-cost micro BTU sensor system fabricated by CMOS MEMS technology | |
| CN208013122U (en) | A kind of micro thermal conductivity detector insensitive to flow | |
| CN104359574A (en) | Fuel cell internal temperature-heat flux synchronous measurement sensor | |
| CN201852602U (en) | Insert-type flow meter | |
| CN103926023A (en) | Heat flux sensor for high-temperature large heat flux measurement and manufacturing method thereof | |
| CN207867991U (en) | Thermistor, absolute humidity sensor | |
| CN1936513A (en) | Gas-mass-flow up-down-stream temperature distribution secondary differential measuring method, sensor and flowmeter | |
| CN109827671A (en) | A kind of thermocouple forming method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20071114 Termination date: 20121219 |