CN100347321C - Copper alloy material having high heat conductivity - Google Patents
Copper alloy material having high heat conductivity Download PDFInfo
- Publication number
- CN100347321C CN100347321C CNB2003101109094A CN200310110909A CN100347321C CN 100347321 C CN100347321 C CN 100347321C CN B2003101109094 A CNB2003101109094 A CN B2003101109094A CN 200310110909 A CN200310110909 A CN 200310110909A CN 100347321 C CN100347321 C CN 100347321C
- Authority
- CN
- China
- Prior art keywords
- alloy material
- pure
- heat conductivity
- alloy
- high heat
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Abstract
The present invention relates to a copper alloy material with high heat conductivity, which is prepared from the following components: 0.0010 to 0.0050 wt% of Li, 0.10 to 0.20 wt% of Te and Cu as the rest. Pure Cu, pure Li and pure Te are used as raw materials to make the alloy material by vacuum smelting. The heat conductivity of the present invention is 28% higher than that of pure red copper and 21% higher than that of pure silver, and the electric conductivity is not less than 100% (IACS).
Description
One, technical field
The present invention relates to alloy, particularly the Cu alloy material of high heat conductance and high conductivity is made the field.
Two, background technology
The current era electronic technology is advanced by leaps and bounds, and the electronic devices and components develop rapidly is more and more as transistor integrated on the wafer, has entered into super large-scale integration from large-scale integrated circuit.Transistor on the unit surface is many more, and power consumption is just many more, and heat radiation has just become big problem.Expectation is integrated 200,000,000 transistors on wafer in 2005, it will hotly must resemble " nuclear reactor ", doubled as if integrated transistor on the wafer by 2010, the level of high-temperature gas nozzle in the time of will hotly arriving rocket launching, by 2015 if the integrated number of transistor be doubled again, will be hot must be the same with the Solar watch surface temperature high.Therefore, the power consumption of ultra-large chip and heat radiation will become an essence restriction, and become the big problem of whole information industry of restriction and even global economy development.Communication system and for example, function is more and more, and data transmit more and more faster, and digital just more and more huger, it is more and more huger consume energy, and the heat that is produced is just very huge, and heat energy can not leave rapidly, and thermal accumlation gets up, and will burn out machine.SAM system supposes to control simultaneously originally three pieces of guided missiles for another example, now controls 6 pieces of guided missiles simultaneously, and numeral doubles at least, and power consumption is doubled at least, if heat does not leave rapidly, machine will soon hotly get and can't work, even burns out.Therefore, heat radiation becomes the formidable enemy of various high-tech, military production development.
In existing thermal conductive metallic material, the highest (λ=405～414wm of the thermal conductivity of fine silver
-1k
-1), the pure red copper (λ=388～391wm that takes second place
-1k
-1), still, existing conventional thermally conductive material is faced with the challenge of new high-tech industry, the especially electronics industry of develop rapidly, can not satisfy the requirement to highly heat-conductive material.
Three, summary of the invention
The Cu alloy material that the purpose of this invention is to provide a kind of high heat conductance, it has than pure red copper even than the better heat conductivility of fine silver.Purpose of the present invention is by being realized by following technical scheme: a kind of Cu alloy material of high heat conductance, and it is made up of following component by weight percentage: the Li of 0.0010%-0.0050%, the Te of 0.10%-0.20%, surplus is Cu.
Technological process of the present invention is as follows: according to each components contents requirement in the above-mentioned alloy, adopting fine copper, pure lithium and pure tellurium is raw material, pass through vacuum melting respectively, make LiCu alloy and TeCu alloy respectively, again with above-mentioned two alloys by vacuum melting, make content and close the LiTeCu alloy that symbol requires.
Learn that through microexamination and Analysis on Mechanism Te form with compound in copper is dissolved in the copper, is the chain parallel rows, distribute along crystal boundary and intracrystalline, Li becomes wire to distribute after playing desoxydatoin and infiltrating the Te element, produce second phase, be precipitation strength, improved the thermal conductivity and the specific conductivity of alloy greatly.The present invention detects its thermal conductivity λ=491～502wm through Institute of Analysis of Southwest Jiaotong University
-1k
-1(SI system).This material thermal conductivity is than pure red copper (λ=388～391wm
-1k
-1) high by 28%, than fine silver high by about 21% (thermal conductivity of fine silver is the highest, and pure red copper is taken second place).Detect its specific conductivity 〉=100%IACS through China Testing Technology Institute.
Four, embodiment
Example 1: according to above-mentioned technological process, the first step: vacuum melting makes LiCu and TeCu alloy, second step: the Cu alloy material that two alloy vacuum meltings is made the following weight degree:
Li 0.0020％
Te 0.12％
The Cu surplus
This alloy thermal conductivity 498wm
-1k
-1(SI), specific conductivity 102.1% (IACS).
Example 2: technological process is the same, and vacuum melting makes the Cu alloy material of following weight degree:
Li 0.0030％
Te 0.15％
The Cu surplus
This alloy thermal conductivity 502wm
-1k
-1(SI), specific conductivity 102.4% (IACS).
Example 3: technological process is the same, and vacuum melting makes the Cu alloy material of following weight degree:
Li 0.0040％
Te 0.18％
The Cu surplus
This alloy thermal conductivity 491wm
-1k
-1(SI), specific conductivity 101.5% (IACS).
Claims (4)
1, a kind of Cu alloy material is characterized in that, it is made up of following component by weight percentage:
The Li of 0.0010%-0.0050%,
The Te of 0.10%-0.20%,
Surplus is Cu.
2, Cu alloy material according to claim 1 is characterized in that it is composed of the following components:
0.0020% Li,
0.12% Te,
Surplus is Cu.
3, Cu alloy material according to claim 1 is characterized in that it is composed of the following components:
0.0030% Li,
0.15% Te,
Surplus is Cu.
4, Cu alloy material according to claim 1 is characterized in that it is composed of the following components:
0.0040% Li,
0.18% Te,
Surplus is Cu.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2003101109094A CN100347321C (en) | 2003-11-11 | 2003-11-11 | Copper alloy material having high heat conductivity |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2003101109094A CN100347321C (en) | 2003-11-11 | 2003-11-11 | Copper alloy material having high heat conductivity |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1544672A CN1544672A (en) | 2004-11-10 |
| CN100347321C true CN100347321C (en) | 2007-11-07 |
Family
ID=34335808
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2003101109094A Expired - Fee Related CN100347321C (en) | 2003-11-11 | 2003-11-11 | Copper alloy material having high heat conductivity |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100347321C (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101768682B (en) * | 2010-02-08 | 2011-10-05 | 四川鑫炬矿业资源开发股份有限公司 | High-conductivity free-cutting Cu-SE-Li alloy material |
| CN105112721A (en) * | 2015-09-08 | 2015-12-02 | 周欢 | Copper-rare earth alloy material |
| CN105112714A (en) * | 2015-09-08 | 2015-12-02 | 周欢 | High-conductivity copper alloy material |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4347413A (en) * | 1978-07-28 | 1982-08-31 | Hitachi, Ltd. | Electrodes of vacuum circuit breaker |
| US4499009A (en) * | 1981-12-21 | 1985-02-12 | Mitsubishi Denki Kabushiki Kaisha | Electrode composition for vacuum switch |
| US4717436A (en) * | 1985-03-27 | 1988-01-05 | Mitsubishi Kinzoku Kabushiki Kaisha | Wire for bonding a semiconductor device |
| CN1410569A (en) * | 2002-09-18 | 2003-04-16 | 四川鑫炬矿业资源开发股份有限公司 | Copper alloy material for contact net wire |
-
2003
- 2003-11-11 CN CNB2003101109094A patent/CN100347321C/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4347413A (en) * | 1978-07-28 | 1982-08-31 | Hitachi, Ltd. | Electrodes of vacuum circuit breaker |
| US4499009A (en) * | 1981-12-21 | 1985-02-12 | Mitsubishi Denki Kabushiki Kaisha | Electrode composition for vacuum switch |
| US4717436A (en) * | 1985-03-27 | 1988-01-05 | Mitsubishi Kinzoku Kabushiki Kaisha | Wire for bonding a semiconductor device |
| CN1410569A (en) * | 2002-09-18 | 2003-04-16 | 四川鑫炬矿业资源开发股份有限公司 | Copper alloy material for contact net wire |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1544672A (en) | 2004-11-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Gao et al. | p‐type plastic inorganic thermoelectric materials | |
| Mallick et al. | High-performance Ag–Se-based n-type printed thermoelectric materials for high power density folded generators | |
| CN102703754B (en) | Cu-Ni-Si-based alloy and preparation method thereof | |
| Zakutayev et al. | Non-equilibrium alloying controls optoelectronic properties in Cu2O thin films for photovoltaic absorber applications | |
| CN100347321C (en) | Copper alloy material having high heat conductivity | |
| You et al. | High thermoelectric performance of Cu-doped PbSe-PbS system enabled by high-throughput experimental screening | |
| Mouko et al. | Manufacturing and performances of silicide-based thermoelectric modules | |
| Aljaghtham et al. | Design of cascade thermoelectric generation systems with improved thermal reliability | |
| Pei et al. | Design and Fabrication of Segmented GeTe/(Bi, Sb) 2Te3 Thermoelectric Module with Enhanced Conversion Efficiency | |
| Artini et al. | Roadmap on thermoelectricity | |
| Cheng et al. | Influences of different barrier films on microstructures and electrical properties of Bi 2 Te 3-based joints | |
| Putnis | The transformation behaviour of cuprous sulphides and its application to the efficiency of CuxS–CdS solar cells | |
| CN108091755A (en) | High entropy thermoelectric material of TiCoSb bases and preparation method thereof and thermo-electric device | |
| Liu et al. | Cu@ Sn@ Ag core–shell particles preform for power device packaging under harsh environments | |
| Misra et al. | Synthesis, crystal structures, phase width and electrochemical performances of γ-brass type phases in Cu–Zn–Sn system | |
| CN102851528A (en) | High-conductivity copper alloy | |
| Huang et al. | Abnormal Cu3Sn Growth and Kirkendall Formation Between Sn and (111) and (220) Preferred-Orientation Cu Substrates | |
| CN110335936B (en) | Copper-indium-sulfur-based thermoelectric material and preparation method thereof | |
| Chang et al. | Ag∕ Au Diffusion Wafer Bonding for Thin-GaN LED Fabrication | |
| Song et al. | Spectroscopic investigation of oxidized solder surfaces | |
| Wen et al. | Dependence of mechanical properties on the site occupancy of ternary alloying elements in γ′-Ni3Al: Ab initio description for shear and tensile deformation | |
| CN1300353C (en) | Copper alloy with high thermal conductivity | |
| CN108470817B (en) | Sb-containing P-type Cu2.856In4Te8Medium-high temperature thermoelectric material and preparation process thereof | |
| Yu et al. | Improvement in the reliability of crystalline silicon solar cell interconnection by using Nickel Micro-Plating Bonding (NMPB) technology | |
| Kim et al. | SnSe: The rise of the ultrahigh thermoelectric performance material |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C19 | Lapse of patent right due to non-payment of the annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |