CN100344000C - Sintering process for silver grating line to pass through TiOx layer and make ohmic contact with Si - Google Patents
Sintering process for silver grating line to pass through TiOx layer and make ohmic contact with Si Download PDFInfo
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- CN100344000C CN100344000C CNB021375836A CN02137583A CN100344000C CN 100344000 C CN100344000 C CN 100344000C CN B021375836 A CNB021375836 A CN B021375836A CN 02137583 A CN02137583 A CN 02137583A CN 100344000 C CN100344000 C CN 100344000C
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- printing
- electric field
- sintering
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Photovoltaic Devices (AREA)
- Battery Electrode And Active Subsutance (AREA)
Abstract
The aim of the present invention is to provide a penetrating and sintering technology for TiOx, which comprises the following procedures: a, spraying a TiO<x> film; b, printing a back electrode; c, drying the back electrode; d, printing a back electric field; e, drying the back electric field; f, fabricating a gate electrode; g, sintering. A battery sheet on which the gate electrode is fabricated is placed in infrared for heating in a way that the gate line faces upwards, and is sintered in a chain belt type RTP sintering furnace having fast temperature rise and fast temperature descent. A first zone, a second zone, a third zone, a fourth zone and a fifth zone of the RTP furnace are not heated. The heating temperature if a sixth zone is 500 DEG C, and the heating temperature of the seventh zone is 740 DEG C to 760 DEG C (the temperature is relevant to the size of the battery sheet and the number of battery sheets which are simultaneously sintered). The technology has the advantages of greatly enhanced efficiency of scale production, product yield and battery performance.
Description
Technical field
The present invention relates at high temperature make silver grating line see through TiO in a kind of production solar cell process
xThe sintering process that layer contacts with Si.
Background technology
The sensitive surface of silicon (Si) solar cell requires have sunlight as much as possible to incide in the cell body, promptly the light that is reflected by battery surface is few as much as possible, be coated with the last layer antireflective coating at battery surface, can reach this requirement, the refraction coefficient of this antireflective coating and the refraction coefficient of Si coupling make the reflectivity minimum; Using the thin-film material that can reach Si surface reflectivity minimum aborning, generally is TiO
xAnd SiN.
The technology of making the Si solar cell adopts mostly makes grid earlier, the back makes antireflective coating technology, because antireflective coating all is one deck " dielectric films ", when making solar module, before on the main grid line, welding welding, " dielectric film " on the main grid line must be removed, general employing instrument scrapes off film, can not all scrape totally and scrape off dielectric film by hand, the residual dielectric film in local area can increase the contact resistance between welding band and main grid line, increase series resistance, thereby reduced photoelectric conversion efficiency; In monolithic welding operation process, scraping off the shared time of dielectric film is the 1/2-2/3 of operation overall process, therefore, adopt " spraying behind the first sintering " technology to make solar cell piece, reduced the labor productivity of assembly monolithic welding, even might scrape inferior grid line on the disconnected main grid line limit, influence the performance and the component power of battery.
TiO
x" O " in the film is with the difference of heating-up temperature, and the x value constantly changes, and plays the TiO of reflex
xIn x must be certain.TiO
xFilm temperature is tending to destroyedly more than 500 ℃, therefore, at high temperature make silver grating line see through TiO
xThe sintering that layer contacts with Si can make silver grating line pass TiO
xLayer contacts with Si, and sintering character is good, even the metal-semiconductor contact is ohmic contact, still, TiO
xLayer is destroyed, can not play the effect of antireflective coating, therefore, and to TiO
x" burning " comparison SiN " burning " much more difficult, also do not have TiO at present
xThe application aborning of " burning " technology.
Summary of the invention
The purpose of this invention is to provide a kind of to TiO
xPenetrate sintering process, this sintering process step is poly-to be:
A, spraying TiO
xFilm: will prepare p-n junction and place on 315 ℃ of spraying furnaces through plasma etching and cleaned chip all around, and evenly be sprayed on titanium base organic solution and make the Si sheet surface that " surperficial texture " is " pyramid ", until surface color be light blue till.
B, printing back electrode: be not coated with TiO by the back electrode figure with the Ag slurry
xSi sheet surface on carry out silk screen printing.
C, oven dry back of the body electricity level: the Si sheet printing surface that back electrode is completed for printing is upwards inserted in the chain-belt type drying oven, 110 ℃ of oven dry down.
D, printing back of the body electric field: on the face that prints back of the body electric field, carry out silk screen printing by back of the body electric field pattern with the Ag-Al slurry.
E, oven dry back of the body electric field: will carry on the back the Si sheet printing surface that electric field is completed for printing and upwards insert in the chain-belt type drying oven, and dry down at 110 ℃.
F makes gate electrode: be coated with TiO with the Ag slurry by gate electrode figure
xCarry out silk screen printing on the Si of film is unilateral.
G, sintering: will make the battery sheet behind the gate electrode, carry out sintering in the chain-belt type RTP sintering furnace that grid line upwards inserts infrared heating, be rapidly heated, all does not heat in I, the II of RTP stove, III, IV, V district, 500 ℃ of VI district heating-up temperatures, 740 ℃-760 ℃ of VII district heating-up temperatures (this battery sheet quantity big or small and sintering simultaneously with the battery sheet is relevant).
The advantage of this technology is the efficient that has improved large-scale production greatly, has improved the rate of finished products of product, compares with general technology, has also improved battery performance.
Embodiment
According to poly-enforcement of technology step of aforementioned summary of the invention, just can finish TiO
xPenetrate sintering process.
Claims (1)
1, a kind of silver grating line passes the sintering process of TiOx layer and Si ohmic contact, it is characterized in that, this sintering process goes on foot to gather and is:
A, spraying TiOx film: will prepare p-n junction and all around through plasma etching also cleaned chip place on 315 ℃ of spraying furnaces, evenly be sprayed on titanium base organic solution and made surperficial texture and be pyramidal Si sheet surface, until surface color be light blue till;
B, printing back electrode: carry out silk screen printing by the back electrode figure not being coated with on the Si sheet surface of TiOx film with Ag slurry;
C, oven dry back of the body electricity level: the Si sheet printing surface that back electrode is completed for printing is upwards inserted in the chain-belt type drying oven, 110 ℃ of oven dry down;
D, printing back of the body electric field: on the face that prints back of the body electric field, carry out silk screen printing by back of the body electric field pattern with the Ag-Al slurry;
C, oven dry back of the body electric field: will carry on the back the Si sheet printing surface that electric field is completed for printing and upwards insert in the chain-belt type drying oven, and dry down at 110 ℃;
F makes gate electrode: carry out silk screen printing by gate electrode figure with the Ag slurry on the Si that is coated with the TiOx film is unilateral;
G, sintering: will make the battery sheet behind the gate electrode, and carry out sintering in the chain-belt type RTP sintering furnace that grid line upwards inserts infrared heating, be rapidly heated, does not all heat in I, the II of RTP stove, III, IV, V district, 500 ℃ of VI district heating-up temperatures, 740 ℃-760 ℃ of VII district heating-up temperatures.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB021375836A CN100344000C (en) | 2002-10-22 | 2002-10-22 | Sintering process for silver grating line to pass through TiOx layer and make ohmic contact with Si |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB021375836A CN100344000C (en) | 2002-10-22 | 2002-10-22 | Sintering process for silver grating line to pass through TiOx layer and make ohmic contact with Si |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1492518A CN1492518A (en) | 2004-04-28 |
| CN100344000C true CN100344000C (en) | 2007-10-17 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB021375836A Expired - Fee Related CN100344000C (en) | 2002-10-22 | 2002-10-22 | Sintering process for silver grating line to pass through TiOx layer and make ohmic contact with Si |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100344000C (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103072392A (en) * | 2012-12-07 | 2013-05-01 | 常州大学 | Novel front side grid line printing method |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101710598B (en) * | 2008-05-04 | 2011-05-18 | 江苏顺风光电科技有限公司 | Method for manufacturing solar cell |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5510271A (en) * | 1994-09-09 | 1996-04-23 | Georgia Tech Research Corporation | Processes for producing low cost, high efficiency silicon solar cells |
| JPH09191118A (en) * | 1996-01-11 | 1997-07-22 | Shin Etsu Chem Co Ltd | Fabrication of solar cell |
| US5899704A (en) * | 1995-03-10 | 1999-05-04 | Siemens Aolar Gmbh | Solar cell with a back-surface field method of production |
-
2002
- 2002-10-22 CN CNB021375836A patent/CN100344000C/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5510271A (en) * | 1994-09-09 | 1996-04-23 | Georgia Tech Research Corporation | Processes for producing low cost, high efficiency silicon solar cells |
| US5899704A (en) * | 1995-03-10 | 1999-05-04 | Siemens Aolar Gmbh | Solar cell with a back-surface field method of production |
| JPH09191118A (en) * | 1996-01-11 | 1997-07-22 | Shin Etsu Chem Co Ltd | Fabrication of solar cell |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103072392A (en) * | 2012-12-07 | 2013-05-01 | 常州大学 | Novel front side grid line printing method |
| CN103072392B (en) * | 2012-12-07 | 2015-04-22 | 常州大学 | Novel front side grid line printing method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1492518A (en) | 2004-04-28 |
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