CN100343995C - Suspension microstructare for infrared image forming device and sensor, method for mfg of same - Google Patents
Suspension microstructare for infrared image forming device and sensor, method for mfg of same Download PDFInfo
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- CN100343995C CN100343995C CNB021426465A CN02142646A CN100343995C CN 100343995 C CN100343995 C CN 100343995C CN B021426465 A CNB021426465 A CN B021426465A CN 02142646 A CN02142646 A CN 02142646A CN 100343995 C CN100343995 C CN 100343995C
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- cantilever
- suspension structure
- microactuator suspension
- transducer
- imaging device
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Abstract
The present invention discloses a suspension microstructure for an infrared image forming device and a sensor and a manufacturing method thereof. Pins for connecting the suspension microstructure to a base plate are formed at the same side, a double-layer structure or a multilayer structure forms a suspension arm part for supporting the suspension microstructure, and a stress difference in the double-layer structure or the multilayer structure enables the suspension arm to be tilted up. The suspension microstructure can be guaranteed not to be in contact with the base plate. Because the suspension arm is tilted up slightly, the thickness of a sacrificial layer in a manufacturing process can be reduced to about 1 micrometer. Furthermore, the existing complementary metal oxide semiconductor technology equipment can be used for bulk production, a metal layer in the semiconductor technology can be especially used as the sacrificial layer, and simultaneously, the manufacturing process is simplified. The present invention is favorable for the reduction of equipment cost and manufacturing cost.
Description
Technical field
The present invention relates to a kind of microactuator suspension structure and manufacture method thereof, be applied to infrared imaging device and infrared ray sensor.
Background technology
The integrated circuit technique early stage of development, just the someone utilizes sacrificial layer technology to make silica-based micro-structural.Then develop the idea that with sacrifice layer afterwards gradually and made the microactuator suspension structure; The idea of sacrifice layer is widely used in the development of face type process technology MEMS (micro electro mechanical system) manufacturing process such as (Surface Micromachining).
Infrared ray sensor is to detect the electromagnetic assembly of infrared ray (wavelength 0.7～1000 μ m), its basic physical mechanism for the character utilizing material behavior and change with incident infrared or thermal radiation as the index that detects infrared ray or thermal radiation.In the process for making of the microactuator suspension structure of making infrared ray sensor and imager, can use the method manufacturing of sacrifice layer to have the microactuator suspension structure of infrared ray sensing material.But, the control meeting of sacrificial layer thickness impacts the microactuator suspension structure, for some sacrificial layer material, as sacrifice layer too thick (approximately greater than 2 microns), may cause sacrifice layer to peel off, sacrifice layer too thin (less than 1 micron) then can make the microactuator suspension structure touch substrate easily.Present most technology all must make and in all sorts of ways to avoid these problems.Microactuator suspension structure described in No. the 5300915th, U.S. (case of issuing licence again number be 36136) patent is in cornerwise mode a pair of pin of support suspension micro-structural and the contact point of substrate to be connected.When the distance of substrate was very little, the stress that this microactuator suspension structure produced made the microactuator suspension structural bending easily and touches substrate in the microactuator suspension structure.
For fear of the microactuator suspension structural bending and and substrate contacts, No. 6262417 patent of the U.S. proposed a kind of infrared ray sensor that makes the microactuator suspension structure remain parallel to substrate.In cornerwise mode a pair of pin of support suspension micro-structural and the contact point of substrate are connected equally, the particular design by pin makes microactuator suspension structure keeping parallelism again.The bracketed part of its pin support suspension micro-structural is pair of lamina structure (bimorph), and the stress difference that is produced between double-decker can make cantilever generation little warpage to a certain degree; Therefore, cantilever is divided into interior zone and perimeter, its perimeter and interior zone will be reached balance in the little warpage angle that produces respectively in the other direction.Make the linking point of cantilever and microactuator suspension structure can be parallel to substrate, and then make microactuator suspension structure and substrate keeping parallelism.Yet this structure needs accurate process technology to divide the interior exterior domain of cantilever, has increased the difficulty of making simultaneously.
Summary of the invention
In view of the defective of above prior art, the object of the present invention is to provide a kind of microactuator suspension structure and manufacture method thereof that is applied to infrared imaging device and transducer, can guarantee that the microactuator suspension structure can not contact with the substrate generation; And (Complementary Metal OxideSemiconductor CMOS) criticizes production, especially can use metal level in the semiconductor technology as sacrifice layer, makes to make to simplify to use existing CMOS (Complementary Metal Oxide Semiconductor).
To achieve these goals, the invention provides a kind of microactuator suspension structure that is applied to infrared imaging device and transducer, include: a substrate, having provides the pair of metal electrodes that electrically conducts; A pair of homonymy pin, correspondence is connected in this to metal electrode, and this respectively has a cantilever to the homonymy pin, and this cantilever is formed by two-layer above stress structure, produce tension stress and produce compression by this cantilever top, this cantilever is tilt upward curved in this cantilever below; And a microactuator suspension structure, be connected in this cantilever and be suspended in substrate surface by this support to the homonymy pin, guarantee that by this cantilever of tilting upward curved this microactuator suspension structure is suspended in substrate surface.
Particularly, the microactuator suspension structure that is applied to infrared imaging device and transducer provided by the present invention includes: a substrate, and it has provides the metal electrode and the infrared signal that electrically conduct to read circuit; A pair of homonymy pin, be connected in the metal electrode of substrate, each binding has a bracketed part to the homonymy pin for this, this cantilever is formed by bilayer or sandwich construction, it is curved to become to tilt upward by the stress official post cantilever shape between bilayer or sandwich construction, for example, if double-decker, then superstructure is a tension stress, uses the metal material electrode of sensing material (and as) usually; Understructure is a compression, uses dielectric material usually; And a microactuator suspension structure, be connected on the cantilever of homonymy pin, and be suspended in substrate surface by this homonymy pin and cantilever support, because pin is to be positioned at homonymy and cantilever to present and tilt upward curvedly, guaranteed that the microactuator suspension structure can be suspended in substrate surface.
The present invention also provides a kind of microactuator suspension structure making process that is applied to infrared imaging device and transducer; Can cooperate existing CMOS (Complementary Metal Oxide Semiconductor) Processes and apparatus to make above-mentioned micro-structural.Its step includes: at first, provide a substrate, its surface has electrode metal and infrared signal reads circuit; Define another metal electrode layer and form metal electrode and sacrifice layer; Form dielectric layer in metal electrode and sacrificial layer surface, its dielectric layer also forms an opening on the top of metal electrode; At metal electrode and dielectric layer surface deposition one metal level (as the electrode of sensing material),, also can deposit and define the infrared ray absorbing layer again with infrared ray sensing material layer, dielectric layer; Definition infrared ray sensing microactuator suspension structure and a pair of homonymy pin and cantilever, bilayer or sandwich construction that this cantilever is made up of dielectric layer and metal level are formed, and metal level and metal electrode electric connection; Infrared ray sensing micro-structural then is connected in this cantilever and pin to homonymy; Remove pre-defined sacrifice layer in substrate surface to discharge the cantilever and the pin of infrared ray sensing micro-structural and homonymy thereof, the stress difference by bilayer or sandwich construction makes cantilever produce little warpage that makes progress simultaneously, and then makes the unsettled microactuator suspension structure that becomes of micro-structural.
The present invention utilizes the homonymy cantilever of little warpage to come the support suspension micro-structural, makes can be reduced to about 1 micron in order to the sacrificial layer thickness of making the microactuator suspension structure.And then can cooperate existing CMOS (Complementary Metal Oxide Semiconductor) Processes and apparatus to make above-mentioned micro-structural; The advantage of utilizing CMOS (Complementary Metal Oxide Semiconductor) technology to make the microactuator suspension structure is: can directly utilize the manufacturing that goes in for the study of the process equipment of domestic semiconductor factory, lower the investment and the maintenance cost of equipment greatly.
The invention will be further described below in conjunction with the drawings and specific embodiments.
Description of drawings
Fig. 1 is the structure schematic top plan view of the embodiment of the invention;
Fig. 2 is the pin and the cantilever design schematic side view of the embodiment of the invention;
Fig. 3 is the making flow chart of the embodiment of the invention.
Embodiment
As shown in Figure 1, the structural representation for the embodiment of the invention includes: a substrate 10, and it has provides the metal electrode 11 that electrically conducts; A pair of homonymy pin 20, correspondence is connected in this metal electrode 11 is electrically conducted with realization, this has a cantilever 21 to homonymy pin 20, and the double-decker by upper metal layers and lower floor's dielectric layer are formed becomes to tilt upward curved by the stress official post cantilever shape between double-decker; An and microactuator suspension structure 30, wherein include the infrared ray sensing material, microactuator suspension structure 30 is to be connected in homonymy pin 20 and to be suspended in substrate 10 surfaces by the support of this homonymy pin 20 through cantilever 21, because pin 20 is positioned at homonymy and cantilever 21 and presents and tilt upward curvedly, is guaranteed that microactuator suspension structure 30 can be suspended in substrate 10 surfaces.Wherein, be engaged in the leg structure of substrate, as shown in Figure 2, be the pin and the cantilever design schematic diagram of the embodiment of the invention.The metal electrode 11 that pin 20 correspondences are connected on the substrate electrically conducts with realization, its homonymy pin 20 includes a cantilever 21, the double-decker of being made up of upper metal layers 23 and lower floor's dielectric layer 22 in this figure is formed, upper metal layers 23 is as the tension stress layer, 22 of lower floor's dielectric layers make cantilever 21 present the upwards shape of warpage as compressive stress layer.
The sandwich construction that the double-decker that the cantilever of microactuator suspension structure provided by the present invention can be made up of upper metal layers and lower floor's dielectric layer or upper strata dielectric layer, middle level metal level and lower floor's dielectric layer are formed forms; By the make progress characteristic of little warpage of its generation of stress official post between bilayer or sandwich construction, therefore can use and make the microactuator suspension structure less than 1 micron sacrifice layer.Its metal layer material can be selected nichrome, titanium nitride or titanium; Dielectric layer material then can be selected silica, silicon oxynitride or silicon nitride.Especially can use the metal electrode layer in the conventional semiconductor technology to be used as sacrifice layer, so, can simplify the microactuator suspension structural manufacturing process step of infrared imaging device and transducer in a large number, can save the cost of process equipment simultaneously.
The present invention also provides a kind of microactuator suspension structure making process that is applied to infrared imaging device and transducer; Can cooperate existing CMOS (Complementary Metal Oxide Semiconductor) Processes and apparatus to make above-mentioned micro-structural.As shown in Figure 3, be the making flow chart of the embodiment of the invention, its step includes: at first, step 110: the substrate that includes electrode and circuit is provided; Step 120: deposit and define a metal electrode layer and form metal electrode and sacrifice layer, its metal electrode is in order to realize circuit turn-on with substrate; Step 130: form dielectric layer at metal electrode and sacrificial layer surface again, its dielectric layer forms an opening on the top of metal electrode; Step 140: at metal electrode and dielectric layer surface deposition and define a metal level, with electrode: step 150: the micro-structural that comprises sensing material is provided again as sensing material; Step 160: definition cantilever and pin define the micro-structural that comprises sensing material simultaneously; At last, in step 170: remove cantilever that pre-defined sacrifice layer in substrate surface discharges micro-structural and homonymy thereof and pin with formation microactuator suspension structure, make cantilever produce little warpage that makes progress by the bilayer of homonymy cantilever or the stress difference of sandwich construction, and then make the unsettled microactuator suspension structure that becomes of micro-structural.
The structural important feature of the present invention is to utilize the homonymy cantilever of little warpage to come the support suspension micro-structural, makes can be reduced to about 1 micron in order to the sacrificial layer thickness of making the microactuator suspension structure.And then can cooperate existing CMOS (Complementary Metal Oxide Semiconductor) Processes and apparatus to make above-mentioned micro-structural; The advantage of utilizing CMOS (Complementary Metal Oxide Semiconductor) technology to make the microactuator suspension structure is: can directly utilize the manufacturing that goes in for the study of the process equipment of domestic semiconductor factory, lower the investment and the maintenance cost of equipment greatly.
The CMOS (Complementary Metal Oxide Semiconductor) technology of general industry standard mainly is to be used for making integrated circuit (IC) chip, rather than is used for making micro suspension structures such as microsensor.Therefore, in the CMOS (Complementary Metal Oxide Semiconductor) technology of industrial standard, be ready to change its fabrication schedule and parameter unless make manufacturer, otherwise various depositing of thin film (deposition) in proper order, material and thickness all is changeless.So, utilize the CMOS (Complementary Metal Oxide Semiconductor) technology of industrial standard to make the micro suspension structure that is applied to infrared imaging device and transducer, to be subjected to the restriction of its standard production process and parameter, therefore in whole design process, must the limiting factor that these are all take into account.Because the present invention can reduce about the thickness to 1 micron of sacrifice layer, can directly select the metal electrode layer of CMOS (Complementary Metal Oxide Semiconductor) technology to be used as sacrifice layer.And in proper order, under the situation of material and thickness, use existing CMOS (Complementary Metal Oxide Semiconductor) technology to make the microactuator suspension structure that is applied to infrared imaging device and transducer in the various thin film depositions (deposition) that need not change its standard production process.
Though the present invention discloses as above with preferred embodiment, be not in order to qualification the present invention, those skilled in the art, according to the content of this specification and accompanying drawing, the equivalent structure transformation of having done all is included in the claim of the present invention.
Claims (12)
1, a kind of microactuator suspension structure that is applied to infrared imaging device and transducer is characterized in that, includes:
One substrate, having provides the pair of metal electrodes that electrically conducts;
A pair of homonymy pin, correspondence is connected in this to metal electrode, and this respectively has a cantilever to the homonymy pin, and this cantilever is formed by two-layer above stress structure, produce tension stress and produce compression by this cantilever top, this cantilever is tilt upward curved in this cantilever below; And
One microactuator suspension structure is connected in this cantilever and is suspended in substrate surface by this support to the homonymy pin, guarantees that by this cantilever of tilting upward curved this microactuator suspension structure is suspended in substrate surface.
2, the microactuator suspension structure that is applied to infrared imaging device and transducer as claimed in claim 1 is characterized in that, the double-layer structure that this cantilever is made up of a upper strata tension stress structure and a laminated stress structure is formed.
3, the microactuator suspension structure that is applied to infrared imaging device and transducer as claimed in claim 2 is characterized in that, this upper strata tension stress structure is a metal level, and this laminated stress structure is a dielectric layer.
4, the microactuator suspension structure that is applied to infrared imaging device and transducer as claimed in claim 3 is characterized in that this metal layer material is selected from one of them of nichrome, titanium nitride and titanium.
5, the microactuator suspension structure that is applied to infrared imaging device and transducer as claimed in claim 3 is characterized in that this dielectric layer material is selected from one of them of silica, silicon oxynitride and silicon nitride.
6, the microactuator suspension structure that is applied to infrared imaging device and transducer as claimed in claim 1, it is characterized in that, the sandwich construction that this cantilever is made up of metal level more than one deck and the dielectric layer more than one deck is formed, by this cantilever of stress official post between this sandwich construction be tilt upward curved.
7, the microactuator suspension structure that is applied to infrared imaging device and transducer as claimed in claim 6 is characterized in that metal layer material is selected from nichrome, titanium nitride or titanium.
8, the microactuator suspension structure that is applied to infrared imaging device and transducer as claimed in claim 6 is characterized in that dielectric layer material is selected from silica, silicon oxynitride or silicon nitride.
9, a kind of microactuator suspension structure making process that is applied to infrared imaging device and transducer is characterized in that, comprises following step:
(a) provide a substrate that includes electrode and circuit;
(b) deposit and define a metal electrode layer to form metal electrode and sacrifice layer;
(c) form a dielectric layer and be coated in this metal electrode and this sacrificial layer surface, this dielectric layer forms an opening on the top of this metal electrode;
(d) at this metal electrode and this dielectric layer surface deposition and define a metal level, this metal level is realized electric connection with this metal electrode;
(e) provide a micro-structural that comprises sensing material, this metal level conducting in this micro-structural with electrode as sensing material; And
(f) one a group of cantilever of definition homonymy and a group of pins that supports this cantilever define this micro-structural simultaneously;
(g) remove this group cantilever and this group of pins of this sacrifice layer with the release homonymy, and then make the unsettled microactuator suspension structure that becomes of micro-structural, this cantilever makes this cantilever produce little warpage that makes progress by its interstructural stress difference simultaneously.
10, the microactuator suspension structure making process that is applied to infrared imaging device and transducer as claimed in claim 9 is characterized in that, this step (a) to step (c) is that the existing CMOS (Complementary Metal Oxide Semiconductor) manufacturing process of utilization is carried out.
11, the microactuator suspension structure making process that is applied to infrared imaging device and transducer as claimed in claim 9 is characterized in that, this metal layer material is selected from nichrome, titanium nitride and or titanium.
12, the microactuator suspension structure making process that is applied to infrared imaging device and transducer as claimed in claim 9 is characterized in that, this dielectric layer material is selected from silica, silicon oxynitride and or silicon nitride.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB021426465A CN100343995C (en) | 2002-09-18 | 2002-09-18 | Suspension microstructare for infrared image forming device and sensor, method for mfg of same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB021426465A CN100343995C (en) | 2002-09-18 | 2002-09-18 | Suspension microstructare for infrared image forming device and sensor, method for mfg of same |
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| Publication Number | Publication Date |
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| CN1484317A CN1484317A (en) | 2004-03-24 |
| CN100343995C true CN100343995C (en) | 2007-10-17 |
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| CNB021426465A Expired - Fee Related CN100343995C (en) | 2002-09-18 | 2002-09-18 | Suspension microstructare for infrared image forming device and sensor, method for mfg of same |
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Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100380587C (en) * | 2006-07-31 | 2008-04-09 | 西安工业大学 | Method for producing amorphous silicon thermal imaging detector micro-structure with self-supporting |
| US7825381B2 (en) * | 2007-06-29 | 2010-11-02 | Agiltron, Inc. | Micromechanical device for infrared sensing |
| CN101718587B (en) * | 2009-12-07 | 2011-05-25 | 北京广微积电科技有限公司 | Non-cooling type ultrared micrometering kampometer |
| CN106629578B (en) * | 2017-02-15 | 2019-07-12 | 浙江大立科技股份有限公司 | Infrared detector and its manufacturing method with micro-bridge structure |
| CN111180536B (en) * | 2020-01-03 | 2021-04-09 | 福州京东方光电科技有限公司 | Photoelectric sensing unit, preparation method thereof and photoelectric sensor |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5399897A (en) * | 1993-11-29 | 1995-03-21 | Raytheon Company | Microstructure and method of making such structure |
| US5962909A (en) * | 1996-09-12 | 1999-10-05 | Institut National D'optique | Microstructure suspended by a microsupport |
| US6201243B1 (en) * | 1998-07-20 | 2001-03-13 | Institut National D'optique | Microbridge structure and method for forming the microbridge structure |
| US6262417B1 (en) * | 1998-12-29 | 2001-07-17 | Daewoo Electronics Co., Ltd. | Infrared bolometer |
-
2002
- 2002-09-18 CN CNB021426465A patent/CN100343995C/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5399897A (en) * | 1993-11-29 | 1995-03-21 | Raytheon Company | Microstructure and method of making such structure |
| US5962909A (en) * | 1996-09-12 | 1999-10-05 | Institut National D'optique | Microstructure suspended by a microsupport |
| US6201243B1 (en) * | 1998-07-20 | 2001-03-13 | Institut National D'optique | Microbridge structure and method for forming the microbridge structure |
| US6262417B1 (en) * | 1998-12-29 | 2001-07-17 | Daewoo Electronics Co., Ltd. | Infrared bolometer |
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